TPSMC6.8 thru TPSMC47A
Vishay General Semiconductor
Document Number: 88407
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
•T
J = 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 1500 W peak pulse power capability with a
10/1000 µs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal
(3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
VBR 6.8 V to 47 V
PPPM 1500 W
IFSM 200 A
TJ max. 185 °C
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (fig. 3) PPPM 1500 W
Peak power pulse current with a 10/1000 µs waveform (1) (fig. 1) IPPM See next table A
Peak forward surge current 8.3 ms single half sine-wave (2)(3) IFSM 200 A
Maximum instantaneous forward voltage at 100 A (2)(3) VF3.5 V
Operating junction and storage temperature range TJ, TSTG - 65 to + 185 °C
TPSMC6.8 thru TPSMC47A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88407
Revision: 09-Feb-11
2
Notes
(1) VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR (1)
AT I
T
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
R
(µA)
TJ = 150 °C
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (µA)
MAXIMUM
PEAK
PULSE SURGE
CURRENT
I
PPM
(2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
MIN. MAX.
TPSMC6.8 DDP 6.12 7.48 10.0 5.50 1000 10000 139.0 10.8
TPSMC6.8A DEP 6.45 7.14 10.0 5.80 1000 10000 143.0 10.5
TPSMC7.5 DFP 6.75 8.25 10.0 6.05 500 5000 128.0 11.7
TPSMC7.5A DGP 7.13 7.88 10.0 6.40 500 5000 133.0 11.3
TPSMC8.2 DHP 7.38 9.02 10.0 6.63 200 2000 120.0 12.5
TPSMC8.2A DKP 7.79 8.61 10.0 7.02 200 2000 124.0 12.1
TPSMC9.1 DLP 8.19 10.0 1.0 7.37 50 500 109.0 13.8
TPSMC9.1A DMP 8.65 9.55 1.0 7.78 50 500 112.0 13.4
TPSMC10 DNP 9.00 11.0 1.0 8.10 20 200 100.0 15.0
TPSMC10A DPP 9.50 10.5 1.0 8.55 20 200 103.0 14.5
TPSMC11 DQP 9.90 12.1 1.0 8.92 5.0 50 92.6 16.2
TPSMC11A DRP 10.5 11.6 1.0 9.40 5.0 50 96.2 15.6
TPSMC12 DSP 10.8 13.2 1.0 9.72 2.0 10 86.7 17.3
TPSMC12A DTP 11.4 12.6 1.0 10.2 2.0 10 89.8 16.7
TPSMC13 DUP 11.7 14.3 1.0 10.5 2.0 10 78.9 19.0
TPSMC13A DVP 12.4 13.7 1.0 11.1 2.0 10 82.4 18.2
TPSMC15 DWP 13.5 16.5 1.0 12.1 1.0 10 68.2 22.0
TPSMC15A DXP 14.3 15.8 1.0 12.8 1.0 10 70.8 21.2
TPSMC16 DYP 14.4 17.6 1.0 12.9 1.0 10 63.8 23.5
TPSMC16A DZP 15.2 16.8 1.0 13.6 1.0 10 66.7 22.5
TPSMC18 EDP 16.2 19.8 1.0 14.5 1.0 10 56.6 26.5
TPSMC18A EEP 17.1 18.9 1.0 15.3 1.0 10 59.5 25.2
TPSMC20 EFP 18.0 22.0 1.0 16.2 1.0 10 51.5 29.1
TPSMC20A EGP 19.0 21.0 1.0 17.1 1.0 10 54.2 27.7
TPSMC22 EHP 19.8 24.2 1.0 17.8 1.0 10 47.0 31.9
TPSMC22A EKP 20.9 23.1 1.0 18.8 1.0 10 49.0 30.6
TPSMC24 ELP 21.6 26.4 1.0 19.4 1.0 10 43.2 34.7
TPSMC24A EMP 22.8 25.2 1.0 20.5 1.0 10 45.2 33.2
TPSMC27 ENP 24.3 29.7 1.0 21.8 1.0 10 38.4 39.1
TPSMC27A EPP 25.7 28.4 1.0 23.1 1.0 10 40.0 37.5
TPSMC30 EQP 27.0 33.0 1.0 24.3 1.0 10 34.5 43.5
TPSMC30A ERP 28.5 31.5 1.0 25.6 1.0 10 36.2 41.4
TPSMC33 ESP 29.7 36.3 1.0 26.8 1.0 10 31.4 47.7
TPSMC33A ETP 31.4 34.7 1.0 28.2 1.0 10 32.8 45.7
TPSMC36 EUP 32.4 39.6 1.0 29.1 1.0 15 28.8 52.0
TPSMC36A EVP 34.2 37.8 1.0 30.8 1.0 15 30.1 49.9
TPSMC39 EWP 35.1 42.9 1.0 31.6 1.0 15 26.6 56.4
TPSMC39A EXP 37.1 41.0 1.0 33.3 1.0 15 27.8 53.9
TPSMC43 EYP 38.7 47.3 1.0 34.8 1.0 20 24.2 61.9
TPSMC43A EZP 40.9 45.2 1.0 36.8 1.0 20 25.3 59.3
TPSMC47 FDP 42.3 51.7 1.0 38.1 1.0 20 22.1 67.8
TPSMC47A FEP 44.7 49.4 1.0 40.2 1.0 20 23.1 64.8
TPSMC6.8 thru TPSMC47A
Vishay General Semiconductor
Document Number: 88407
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
TPSMC6.8AHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel
TPSMC6.8AHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1.0
10
100
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
P
PPM
- Peak Power (kW)
td - Pulse Width (s)
TA = 25 °C
Non-Repetitive Pulse
Waveform shown in Fig. 3
0
25
50
75
100
050 100 150 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
r
= 10 µs
Peak Value
IPPM
Half Value -
IPPM
I
PP
2
t
d
10/1000 µs Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
1 10 100
Junction Capacitance (pF)
V
BR
- Breakdown Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
V
R
, measured at
Zero Bias
V
R
measured at
Stand-Off Voltage, V
WM
TPSMC6.8 thru TPSMC47A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88407
Revision: 09-Feb-11
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Maximum Non-Repetitive/Peak Forward Surge Current
200
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
10
50
50 10 1 100 5
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
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Revision: 12-Mar-12 1Document Number: 91000
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