DATA SH EET
Product data sheet
Supersedes data of 1996 Dec 05
1999 Apr 21
DISCRETE SEMICONDUCTORS
BF720; BF722
NPN high-voltage transistors
db
ook, halfpage
M3D087
1999 Apr 21 2
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF720; BF722
FEATURES
•Low feedback capa citance.
APPLICATIONS
•Class-B video ou tput stages of colour television
receivers
•General purpose high voltage circu i ts.
DESCRIPTION
NPN transistors in a SOT223 plastic package.
PNP complement: BF723.
PINNING
PIN DESCRIPTION
1base
2, 4 collector
3emitter
Fig.1 Simplified outline (SOT223) and sym bol.
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 134).
Note
1. Device mounted o n printed-circuit board, single sided co pper, tinplated, mounting pad for collector
1 cm2.For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of ass oc i ated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF720 −300 V
BF722 −250 V
VCEO collector-emitter voltage open base
BF720 −300 V
BF722 −250 V
VEBO emitter-base vo ltage open collector −5 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.2 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 21 3
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistors BF720; BF722
THERMAL CHARACTE RISTICS
Note
1. Device mounted o n printed-circuit board, single sided co pper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 106 K/W
Rth j-s thermal resistance from junction to soldering point note 1 25 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 200 V −10 nA
IE = 0; VCB = 200 V; Tj = 150 °C−10 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V −50 nA
hFE DC current gain IC = 25 mA; VCE = 20 V 50 −
VCEsat collector-emitte r sa turation v oltage IC = 30 mA; IB = 5 mA −0.6 V
Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz −1.6 pF
fTtransition freque ncy IC = 10 mA; VCE = 10 V; f = 100 MHz 60 −MHz
1999 Apr 21 4
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistors BF720; BF722
PACKAGE OUTLINE
UNIT A
1
b
p
cDEe
1
H
E
L
p
Qywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b
1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
1999 Apr 21 5
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF720; BF722
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reason ably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not fo rm p art o f an y q uot ation or co ntract, is believed to be accurate a nd reliable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp6 Date of releas e: 1999 Apr 21 Document orde r number: 9397 750 05699
