SEMIPONTTM 5
Bridge Rectifier
SKDT 115
Target Data
Features
! "
# $%&& ' " "
# () * + %, -,.
Typical Applications
/ 0 "
/
SKDT
'12 '2) '/2 4/5 $$& 0
' ' 5 6& 7
$,&& $.&& 18/ $$-9$.
$:&& $%&& 18/ $$-9$%
Symbol Conditions Values Units
4/5 6& 7 $$& 0
412) 4;12 "< 5 .- 7= $& $&-& 0
"< 5 $.- 7= $& >-& 0
? "< 5 .- 7= 6), *** $& --&& 0?
"< 5 $.- 7= 6), *** $& @-&& 0?
') ';"< 5 .- 7= 4) 4;5$.&0 A* $)6 '
'B "< 5 $.- 7= A* $)$ '
"< 5 $.- 7 A* % C
4//= 4/ "< 5 $.- 7= '// 5 '/2= '/ 5 '2 A* .& 0
"< 5 7= 4!5 0= !9 5 09D D
'/5E'/2 D
"9 "< 5 $.- 7 A* -&& '9D
9 "< 5 $.- 7= 5 -&***%& ( A* -& 09D
F"< 5 $.- 7= * $-& D
4"< 5 .- 7= * 9 A* 9 .&& 0
4"< 5 .- 7= !5 ,, C 9 @&& 0
'! "< 5 .- 7= ** * , '
4! "< 5 .- 7= ** * $-& 0
'!/ "< 5 $.- 7= ** A* &).- '
4!/ "< 5 $.- 7= ** A* - 0
89G
89G
< &)6@ 89G
"< @& *** H $.- 7
@& *** H $.- 7
.%& 7
' * * -& (= ***= $ 9 $ * ,%&& ,&&& '
2 I .)- J
2J
A* :-
! -6
SKDT 115
1 28-02-2006 DIL © by SEMIKRON
Fig. 1 Power dissipation vs. r.m.s. current Fig. 2 Surge overload current vs. time
Fig. 3 Single thyristro on-state characteristic Fig. 4 Transient thermal impedance vs. time
Fig. 5 Gate trigger characteristic
SKDT 115
2 28-02-2006 DIL © by SEMIKRON
Dimensions in mm
! -6
! -6 /
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKDT 115
3 28-02-2006 DIL © by SEMIKRON
