10-43
Specifications DG506A, DG507A, DG508A, DG509A
Absolute Maximum Ratings Thermal Information
V+ to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25V
VIN to Ground (Note 1) . . . . . . . . . . . . . . . . . . . . . (V- -2V), (V+ +2V)
VS or VD to V+ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . +2, (V- -2V)
VS or VD to V- (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .-2, (V+ +2V)
Current, any Terminal Except S or D . . . . . . . . . . . . . . . . . . . .30mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . .20mA
Peak Current, S or D (Pulsed at 1ms, 10% Duty Cycle Max.) .40mA
Storage Temperature
C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +125oC
A & B Suffix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance θJA θJC
16 Lead Ceramic DIP Package. . . . . . . . 77oC/W 23oC/W
28 Lead Ceramic DIP Package. . . . . . . . 55oC/W 17oC/W
16 Lead Plastic DIP Package . . . . . . . . . 100oC/W -
28 Lead Plastic DIP Package . . . . . . . . . 60oC/W -
16 Lead SOIC (W) Package . . . . . . . . . . 100oC/W -
28 Lead SOIC Package. . . . . . . . . . . . . . 70oC/W -
Operating Temperature Range
C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC
B Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25oC to +85oC
A Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55oC to +125oC
Junction Temperature
Ceramic DIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TA = +25oC, V+ = +15V, V- = -15V, GND = 0V, VEN = 2.4V,
Unless Otherwise Specified
PARAMETERS TEST CONDITIONS
DG506AA, DG507AA,
DG508AA, DG509AA DG506AB/C, DG507AB/C,
DG508AB/C, DG509AB/C
UNITSMIN (NOTE 2)
TYP MAX MIN (NOTE 2)
TYP MAX
DYNAMIC CHARACTERISTICS
Switching Time of Multi-
plexer, tTRANSITION
See Figure 3 - 0.6 1 - 0.6 - µs
Break-Before-Make
Interval, tOPEN
See Figure 5 - 0.2 - - 0.2 - µs
Enable Turn-On Time,
tON(EN)
See Figure 4 - 1 1.5 - 1 - µs
Enable Turn-Off Time,
tOFF(EN)
See Figure 4 - 0.4 1.0 - 0.4 - µs
Off Isolation, OIRR VEN = 0V, RL = 1kΩ, CL = 15pF, VS =
7VRMS, f = 500kHz (Note 4) -68--68-dB
Source Off Capacitance,
CS(OFF)
VS = 0V, VEN = 0V, f = 140kHz
DG506A, DG507A - 6 - - 6 - pF
DG508A, DG509A - 5 - - 5 - pF
Drain Off Capacitance,
CD(OFF)
VD = 0V, VEN = 0V, f = 140kHz
DG506A - 45 - - 45 - pF
DG507A - 23 - - 23 - pF
DG508A - 25 - - 25 - pF
DG509A - 12 - - 12 - pF
Charge Injection, Q See Figure 6
DG506A, DG507A - 6 - - 6 - pC
DG508A, DG509A - 4 - - 4 - pC
INPUT
Address Input Current, In-
put Voltage High, IAH
VA = 2.4V -10 -0.002 - -10 -0.002 - µA
VA = 15V - 0.006 10 - 0.006 10 µA
Address Input Current
Input Voltage Low, IAL
VEN = 2.4V VA = 0V -10 -0.002 - -10 -0.002 - µA
VEN = 0V -10 -0.002 - -10 -0.0002 - µA