2N6031 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   



. . . designed for use in high power audio amplifier applications and high voltage

switching regulator circuits.

•High Collector Emitter Sustaining Voltage —

VCEO(sus) = 120 Vdc — 2N5630, 2N6030

VCEO(sus) = 140 Vdc — 2N5631, 2N6031

•High DC Current Gain — @ IC = 8.0 Adc

hFE = 20 (Min) — 2N5630, 2N6030

hFE = 15 (Min) — 2N5631, 2N6031

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

2N5630

2N6030

ÎÎÎÎ

2N5631

2N6031

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

120

ÎÎÎÎ

140

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

120

ÎÎÎÎ

140

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

7.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

200

1.14

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

0.875

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

200

00 20 40 60 80 100 120 140 200

Figure 1. Power Derating

TC, TEMPERATURE (

150

100

Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.

PD, POWER DISSIPATION (WATTS)

160 180



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5630/D

 Motorola, Inc. 1995









16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

100–120–140 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)





REV 7

   

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0) 2N5630, 2N6030

2N5631, 2N6031

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

120

140

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 50 Vdc, IB = 0)

(VCE = 60 Vdc, IB = 0) 2N5630, 2N6030

(VCE = 70 Vdc, IB = 0) 2N5631, 2N6031

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = Rated VCB, VEB(off) = 1.5 Vdc)

(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

2.0

7.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Cutoff Current

(VCB = Rated VCB, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 8.0 Adc, VCE = 2.0 Vdc) 2N5630, 2N6030

2N5631, 2N6031

(IC = 16 Adc, VCE = 2.0 Vdc) All Types

ÎÎÎÎ

hFE

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.0 Adc) All Types

(IC = 16 Adc, IB = 4.0 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.0 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 8.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2)

(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)

ÎÎÎÎ

1.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N5630, 31

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6030, 31

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

500

1000

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

(2) fT = |hfe| • ftest

Figure 2. Switching Times Test Circuit

+11 V 25

–9.0 V

–4 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

3.0

0.2

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.03 0.3 0.5 0.7 1.0 2.0 3.0 7.0 20

TJ = 25

IC/IB = 10

VCE = 30 V

0.07

0.05

5.0 10

td @ VBE(off) = 5.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

For PNP test circuit, reverse all polarities and D1.

2N5629, 30, 31

2N6029, 30, 31

   

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.5

0.2

0.1

0.05

0.02

0.05

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.1 0.2 0.5 5.0 10 20 50 100 200 500 20001000

JC(t) = r(t)

JC = 0.875

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

0.1

0.02

1.0 2.0

SINGLE PULSE

2.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7.0

5.0

2.0

0.2 3.0 5.0 7.0 10 20 30 50 200

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

1.0

IC, COLLECTOR CURRENT (AMP)

CURVES APPLY BELOW

RATED VCEO

TJ = 200

1.0 ms

0.7

0.5

0.3 2N5630, 2N6030

3.0

100

0.5 ms

50 ms

5.0 ms

2N5631, 2N6031

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

200

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

t, TIME ( s)

PNP

2N6030, 2N6031

5.0

0.2

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

3.0

2.0

1.0

0.5 0.3 0.7 1.0 2.0 7.0 10 20

TJ = 25

IC/IB = 10

IB1 = IB2

VCE = 30 V

5.0

0.7

0.5 3.0

NPN

2N5630, 2N5631

4.0

0.2 IC, COLLECTOR CURRENT (AMP)

3.0

2.0

1.0

0.2 0.3 0.7 1.0 2.0 7.0 10 20

TJ = 25

IB1 = IB2

IC/IB = 10

VCE = 30 V

5.0

0.4

0.5 3.0

0.6

0.3

t, TIME ( s)

   

4Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

0.2

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100 5.0 10 20 50 100 2000.5 1.0 2.0

C, CAPACITANCE (pF)

700

500

300

200

TJ = 25

Cib

Cob

NPN

2N5630, 2N5631

2000

VR, REVERSE VOLTAGE (VOLTS)

200

C, CAPACITANCE (pF)

700

500

300

TJ = 25

NPN

2N5630, 2N5631

1000

Figure 8. DC Current Gain

500

0.2 IC, COLLECTOR CURRENT (AMP)

5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 20

200

300

100

hFE, DC CURRENT GAIN

TJ = 150

–55

7.0

VCE = 2.0 V

VCE = 10 V

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 9. Collector Saturation Region

2.0

0.05 IB, BASE CURRENT (AMP)

00.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0

1.2

0.8

0.4

IC = 4.0 A

TJ = 25

8.0 A 16 A

1.6

3.0 IB, BASE CURRENT (AMP)

0.2 5.0 10 20 50 100 2000.5 1.0 2.0

Cib

Cob

500

0.2

5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 20

200

300

100

7.0

TJ = +150

+25

–55

VCE = 2.0 V

VCE = 10 V

2.0

0.05

00.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0

1.2

0.8

0.4

1.6

3.0

IC = 4.0 A 8.0 A 16 A

TJ = 25

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

   

6Motorola Bipolar Power Transistor Device Data

How to reach us:

USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – T OUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .

2N5630/D

*2N5630/D*

◊