VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 1800 16.1 1.65 1 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor m V PRELIMINARY 5SHX 19L6005 Doc. No. 5SYA1229-01 Feb. 02 * Direct fiber optic control and status * Fast response (tdon < 3 s, tdoff < 6 s) * Precise timing ( tdoff < 800 ns) * Patented free-floating silicon technology * High reliability * Very high EMI immunity * Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage IDRM Repetitive peak off-state current VDClink Permanent DC voltage for 100 FIT failure rate Mechanical data 5500 V 50 mA 3300 V VGR 2V VD = VDRM 0 Tj 115 C. Ambient cosmic radiation at sea level in open air. (see Fig. 9) min. 42 kN max. 46 kN VGR 2V Fm Mounting force Dp Pole-piece diameter 85 mm 0.1 mm H Housing thickness 26 mm 0.5 mm m Weight IGCT 3.5 kg Ds Surface creepage distance 33 mm Da Air strike distance 13 mm l Length IGCT 451 mm +0/-0.5 mm h Height IGCT 40 mm 1.0 mm w Width IGCT 213 mm +0/-0.5 mm ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SHX 19L6005 GCT Data On-state (see Fig. 1) ITAVM Max. average on-state current ITRMS Max. RMS on-state current ITSM Max. peak non-repetitive surge current I2t Limiting load integral VT On-state voltage VT0 Threshold voltage rT Slope resistance 725 A Half sine wave, TC = 85 C 1140 A 16.1 kA tp = 10 ms 32 kA tp = 1 ms 6 2 tp = 10 ms 6 2 tp = 1 ms IT = 1800 A IT = 400 - 2000 A 1.3x10 A s 0.51x10 A s 3.45 V 1.65 V 1 m Tj = 115 C After surge: VD = VR = 0V Tj = 115 C Turn-on switching di/dtcrit Max. rate of rise of on-state current tdon Turn-on delay time tr Rise time ton (min) Min, on-time Eon Turn-on energy per pulse f = IT = 1800 A VD = 3900 V 3 s VD = 3300 V Tj 1 s IT = 1800 A 10 s RS = 0.63 510 A/s 1J 500 Hz CCL = 4 F Tj = = di/dt = Li 115 C 115 C 430 A/s = 7.6 H LCL = 0.6 H Tj = 115 C LCL 0.6 H Turn-off switching (see Fig. 2, 3) ITGQM Max. controllable turn-off current 1800 A ITGQM2 Max. controllable turn-off current 1100 A tdoff Turn-off delay time tf Fall time toff (min) Min. off-time Eoff Turn-off energy per pulse VDM VDRM VD = VDM 6 s VD VD = = 1 s Tj = 10 s ITGQ = 9.6 J CCL = 3300 V VDRM 3900 V 3300 V 115 C Tj = 115 C LCL VDM 0.6 H VDRM 0.63 Rs = Li = 7.6 H 4 F LCL 0.6 H ITGQM ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1229-01 Feb. 02 page 2 of 9 5SHX 19L6005 Diode Data On-state (see Fig. 4) IFAVM Max. average on-state current 325 A IFRMS Max. RMS on-state current 510 A IFSM Max. peak non-repetitive surge current 13.6 kA tp = 31.5 kA tp = 1 ms After surge: 6 2 tp = 10 ms VF = VR = 0V 6 2 tp = IF = 1800 A IF = 400 - 2200 A IF = 1800 A VCL = 3900 V 3300 V I2t Limiting load integral VF On-state voltage VF0 Threshold voltage rF Slope resistance 0.93x10 A s 0.49x10 A s 6.8 V 2.48 V 2.4 m Half sine wave, TC = 85 C 10 ms Tj = 115 C 1 ms Tj = 115 C Turn-off switching (see Fig. 5, 6) di/dtcrit Max. rate of rise of on-state current Irr Reverse recovery current 780 A VCL = Err Turn-off energy 4.9 J di/dt = 510 A/s Rs = Tj = IF = 115 C 1800 A 430 A/s Tj = 115 C 0.63 Li = 7.6 H LCL = 0.6 H CCL = 4 F Gate Unit Power supply (see Fig. 9 to 11) VGDC Gate Unit voltage 20 0.5 VDC PGin Gate Unit power consumption 47 W Without galvanic isolation to power circuit. fS = 500 Hz, ITGQ AV = 750 A, = 0.9 X1 Gate Unit power connector AMP 640389-4 MTA Friction Lock Header, right angle Note 1 Optical control input/output Note 3 (see Fig. 10 to 12) Pon CS Optical input power > -21 dBm Poff CS Optical noise power < -45 dBm Valid for 1mm plastic optical fibre Pon SF Optical output power > -15 dBm (POF) Poff SF Optical noise power < -50 dBm tGLITCH Pulse width threshold 500 ns CS Receiver for command signal Agilent, Type HFBR-2528 Note 2 SF Transmitter for status feedback Agilent, Type HFBR-1528 Note 2 Max. pulse width without response Note 1: AMP, www.amp.com Note 2: Agilent Technologies, www.semiconductor.agilent.com Note 3: Do not disconnect or connect fiber optic cables while light is on. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1229-01 Feb. 02 page 3 of 9 5SHX 19L6005 Thermal Tjop Operating junction temperature range 0...115 C Tstg Storage temperature range -40...60 C Tamb Ambient operational temperature range 0...60 C Thermal resistance junction to case RthJC GCT Diode not dissipating 12 K/kW Double side cooled RthJC Diode GCT not dissipating 23 K/kW Thermal resistance case to heatsink RthCH GCT Diode not dissipating 6 K/kW Double side cooled RthCH Diode GCT not dissipating 6 K/kW ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1229-01 Feb. 02 page 4 of 9 5SHX 19L6005 GCT Part Eoff [J] IT [A] 2500 11 Tj = 115C Tj = 115C 10 VD = 3300 V 9 2000 8 7 1500 6 5 1000 4 3 500 2 1 0 0 1.5 Fig. 1 2.0 2.5 3.0 3.5 4.0 0 VT [V] GCT on-state characteristics. Fig. 2 400 800 1200 1600 2000 ITGQ [A] GCT turn-off energy per pulse vs. turn-off current. ITGQ [A] 2000 Tj = 0..115 C V DM V DRM Li = 7.6 H 1500 CCL = 4.0 F LCL = 0.6 H Rs = 0.63 1000 500 0 0 1000 2000 3000 4000 5000 VD [V] Fig. 3 Max. repetitive GCT turn-off current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1229-01 Feb. 02 page 5 of 9 5SHX 19L6005 Diode Part IF [A] Irr [A] 2500 850 Tj = 115C Tj = 115C diF/dt = 430 A/s 800 VD = 3300 V 2000 750 1500 700 650 1000 600 500 550 0 500 3 4 5 6 7 8 0 VF [V] Fig. 4 Diode on-state characteristics. Fig. 5 250 500 750 1000 1250 1500 1750 2000 IFQ [A] Diode reverse recovery current vs. turn-off current. IFQ [A] Err [J] 5.5 2000 Tj = 115C 5.0 diF/dt = 430 A/s Tj = 0 - 115C VD = 3300 V 4.5 diF/dt = 430 A/s 1500 4.0 VDM VDRM 3.5 3.0 1000 2.5 2.0 1.5 500 1.0 0.5 0 0.0 0 Fig. 6 250 500 0 750 1000 1250 1500 1750 2000 IFQ [A] Diode turn-off energy per pulse vs. turn-off current. Fig. 7 1000 2000 3000 4000 VD [V] Max. repetitive diode forward current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1229-01 Feb. 02 page 6 of 9 5SHX 19L6005 PGin [W] 100 fs = 1000 Hz fs = 500 Hz fs = 50 Hz 80 60 40 20 0 0 Fig. 8 200 400 600 800 ITGQ ave [A] Gate Unit power consumption. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1229-01 Feb. 02 page 7 of 9 5SHX 19L6005 O134 O122 O120 1 27 40 16 x M3x12 (F-Schr.) 451 226 225 7.45 22. 5 + - - SF CS 2 13 150 + X1 Fig. 9 Device Outline Drawing. RC-IGCT Gate Unit X1 RC-GCT Supply (20VDC) Internal Supply (without galvanic isolation to power circuit) TurnOn Circuit CS SF Fig. 10 Command Signal (Light) Status Feedback (Light) Rx Tx Logic Monitoring TurnOff Circuit Anode Gate Cathode Block diagram. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1229-01 Feb. 02 page 8 of 9 5SHX 19L6005 1 Turn-on Turn-off di/dt ITM VD VDM VDSP VD IT IT 0.9 VD 0.8 ITGQ CS CS 0.05 VD 0.1 VD 0.3 ITGQ VG tdon tdoff VG tf tr Fig. 11 General current and voltage waveforms with IGCT-specific symbols. Li LCL DUT Rs VLC GCT - part CCL DUT Diode - part Fig. 12 LLoad Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1229-01 Feb. 02