ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VDRM = 5500 V
ITGQM = 1800 A
ITSM = 16.1 kA
VT0 =1.65V
rT=1
mΩ
ΩΩ
Ω
VDClink = 3300 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 19L6005
PRELIMINARY
Doc. No. 5SYA1229-01 Feb. 02
•
••
•Direct fiber optic control and status
•
••
•Fast response (tdon < 3 µs, tdoff < 6 µs)
•
••
•Precise timing (∆
∆∆
∆tdoff < 800 ns)
•
••
•Patented free-floating silicon technology
•
••
•High reliability
•
••
•Very high EMI immunity
•
••
•Cosmic radiation withstand rating
Blocking
VDRM Repetitive peak off-state voltage 5500 V VGR ≥ 2V
IDRM Repetitive peak off-state current ≤50 mA VD= VDRM VGR ≥ 2V
VDClink
Permanent DC voltage for 100
FIT failure rate 3300 V 0 ≤ Tj ≤ 115 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 9)
min. 42 kN
FmMounting force max. 46 kN
DpPole-piece diameter 85 mm ±0.1 mm
H Housing thickness 26 mm ±0.5 mm
m Weight IGCT 3.5 kg
DsSurface creepage distance ≥33 mm
DaAir strike distance ≥13 mm
l Length IGCT 451 mm +0/-0.5 mm
h Height IGCT 40 mm ±1.0 mm
w Width IGCT 213 mm +0/-0.5 mm
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02 page 2 of 9
GCT Data
On-state (see Fig. 1)
ITAVM Max. average on-state current 725 A Half sine wave, TC = 85 °C
ITRMS Max. RMS on-state current 1140 A
16.1 kA tp=10ms
ITSM
Max. peak non-repetitive
surge current 32 kA tp=1ms
Tj = 115 °C
After surge:
VD = VR = 0V
1.3x106A2st
p=10ms
I2t Limiting load integral 0.51x106A2st
p=1ms
VTOn-state voltage ≤3.45 V IT= 1800 A
VT0 Threshold voltage 1.65 V
rTSlope resistance 1 mΩIT= 400 - 2000 A Tj = 115 °C
Turn-on switching
f = 500 Hz Tj= 115 °C
di/dtcrit
Max. rate of rise of on-state
current 510 A/µs IT= 1800 A VD= 3900 V
tdon Turn-on delay time ≤3µs V
D = 3300 V Tj= 115 °C
trRise time ≤1µs I
T= 1800 A di/dt = 430 A/µs
ton (min) Min, on-time 10 µs RS=0.63
ΩLi=7.6µH
Eon Turn-on energy per pulse ≤1J C
CL =4µFL
CL =0.6µH
Turn-off switching (see Fig. 2, 3)
VDM ≤VDRM Tj= 115 °C
ITGQM Max. controllable turn-off current 1800 A VD= 3300 V LCL ≤0.6 µH
VDM ≤VDRM Tj= 115 °C
ITGQM2 Max. controllable turn-off current 1100 A VD= 3900 V LCL ≤0.6 µH
tdoff Turn-off delay time ≤6µs V
D= 3300 V VDM ≤VDRM
tfFall time ≤1µs T
j= 115 °C Rs=0.63
Ω
toff (min) Min. off-time 10 µs ITGQ =I
TGQM Li=7.6µH
Eoff Turn-off energy per pulse ≤9.6 J CCL =4µFL
CL ≤0.6 µH
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02 page 3 of 9
Diode Data
On-state (see Fig. 4)
IFAVM Max. average on-state current 325 A
IFRMS Max. RMS on-state current 510 A Half sine wave, TC = 85 °C
13.6 kA tp=10msT
j = 115 °C
IFSM
Max. peak non-repetitive surge
current 31.5 kA tp= 1 ms After surge:
0.93×106A2st
p=10msV
F = VR = 0V
I2t Limiting load integral 0.49×106A2st
p=1ms
VFOn-state voltage ≤6.8 V IF= 1800 A
VF0 Threshold voltage 2.48 V Tj = 115 °C
rFSlope resistance 2.4 mΩIF= 400 - 2200 A
Turn-off switching (see Fig. 5, 6)
IF= 1800 A Tj= 115 °C
di/dtcrit
Max. rate of rise of on-state
current 510 A/µs VCL = 3900 V
Irr Reverse recovery current ≤780 A VCL = 3300 V IF= 1800 A
Err Turn-off energy ≤4.9 J di/dt = 430 A/µs Tj= 115 °C
Rs=0.63
ΩLi=7.6µH
CCL =4µFL
CL =0.6µH
Gate Unit
Power supply (see Fig. 9 to 11)
VGDC Gate Unit voltage 20 ±0.5 VDC
Without galvanic isolation to power
circuit.
PGin Gate Unit power consumption ≤47 W fS = 500 Hz, ITGQ AV = 750 A, δ = 0.9
X1 Gate Unit power connector AMP 640389-4 MTA Friction Lock Header, right angle Note 1
Optical control input/output Note 3 (see Fig. 10 to 12)
Pon CS Optical input power > -21 dBm
Poff CS Optical noise power < -45 dBm
Pon SF Optical output power > -15 dBm
Poff SF Optical noise power < -50 dBm
Valid for 1mm plastic optical fibre
(POF)
tGLITCH Pulse width threshold ≤500 ns Max. pulse width without response
CS Receiver for command signal Agilent, Type HFBR-2528 Note 2
SF Transmitter for status feedback Agilent, Type HFBR-1528 Note 2
Note 1: AMP, www.amp.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
Note 3: Do not disconnect or connect fiber optic cables while light is on.
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02 page 4 of 9
Thermal
Tjop Operating junction temperature range 0…115 °C
Tstg Storage temperature range -40…60 °C
Tamb Ambient operational temperature range 0…60 °C
Thermal resistance junction to case
RthJC GCT Diode not dissipating ≤12 K/kW Double side cooled
RthJC Diode GCT not dissipating ≤23 K/kW
Thermal resistance case to heatsink
RthCH GCT Diode not dissipating ≤6 K/kW Double side cooled
RthCH Diode GCT not dissipating ≤6K/kW
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02 page 5 of 9
GCT Part
1.5 2.0 2.5 3.0 3.5 4.0
VT [V]
0
500
1000
1500
2000
2500
IT [A]
Tj = 115°C
0 400 800 1200 1600 2000
ITGQ [A]
0
1
2
3
4
5
6
7
8
9
10
11
Eoff [J]
Tj = 115°C
VD = 3300 V
Fig. 1 GCT on-state characteristics. Fig. 2 GCT turn-off energy per pulse vs.
turn-off current.
0
500
1000
1500
2000
0 1000 2000 3000 4000 5000
VD [V]
ITGQ [A]
Tj = 0..115 °C
VDM ≤
≤≤
≤ VDRM
Li = 7.6 µ
µµ
µH
CCL = 4.0 µ
µµ
µF
LCL = 0.6 µ
µµ
µH
Rs = 0.63 Ω
ΩΩ
Ω
Fig. 3 Max. repetitive GCT turn-off current.
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02 page 6 of 9
Diode Part
345678
VF [V]
0
500
1000
1500
2000
2500
IF [A]
Tj = 115°C
0 250 500 750 1000 1250 1500 1750 2000
IFQ [A]
500
550
600
650
700
750
800
850
Irr [A]
Tj = 115°C
diF/dt = 430 A/µs
VD = 3300 V
Fig. 4 Diode on-state characteristics. Fig. 5 Diode reverse recovery current vs.
turn-off current.
0 250 500 750 1000 1250 1500 1750 2000
IFQ [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Err [J]
Tj = 115°C
diF/dt = 430 A/µs
VD = 3300 V
0 1000 2000 3000 4000
VD [V]
0
500
1000
1500
2000
IFQ [A]
Tj = 0 - 115°C
diF/dt = 430 A/µs
VDM ≤ VDRM
Fig. 6 Diode turn-off energy per pulse vs.
turn-off current.
Fig. 7 Max. repetitive diode forward
current.
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02 page 7 of 9
0 200 400 600 800
ITGQ ave [A]
0
20
40
60
80
100
PGin [W]
fs = 1000 Hz
fs = 500 Hz
fs = 50 Hz
Fig. 8 Gate Unit power consumption.
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-01 Feb. 02 page 8 of 9
7.45
213
150
225
451
226
22.5°
27
40
Ø134
Ø122
Ø120
16 x M3x12 (F-Schr.)
-
+
-
+
1
CS
SF
X1
Fig. 9 Device Outline Drawing.
SF
RC-IGCT
Logic
Monitoring Turn-
Off
Circuit
Turn-
On
Circuit
Gate
Cathode
Internal Supply (without galvanic isolation to power circuit)
Supply (20V
DC
)
X1
CS
Rx
Command Signal (Light)
Tx
Status Feedback (Light)
Anode
Gate Unit RC-GCT
Fig. 10 Block diagram.
5SHX 19L6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1229-01 Feb. 02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
1
CS
CS
I
T
V
DSP
V
DM
V
D
0.3 I
TGQ
0.8 I
TGQ
0.05 V
D
V
G
t
don
t
f
t
r
t
doff
I
T
I
TM
di/dt
0.9 V
D
0.1 V
D
V
D
Turn-on Turn-off
V
G
Fig. 11 General current and voltage waveforms with IGCT-specific symbols.
LCL
Li
Rs
DUT
GCT - part
LLoad
DUT
Diode - part
CCL
VLC
Fig. 12 Test circuit.
