3875081 G E SOLID STATE O1 pe Bf sazsnaa OOLBLA? 3 q> T- 397-4 Standard Power MOSFETs RFM8N18, RFM8N20, RFP8N18, RFP8N20 N-Channel Enhancement-Mode Power Field-Effect Transistors 8 A, 180 V 200 V fos(on): 0.5 O Features: & SOA is power-dissipation limited m Nanosecond switching speeds a Linear transfer characteristics a High input impedance a Majority carrier device The RFM8N18 and RFM8N20 and the RFEP8N18 and RFP8N20* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The RFM-types are supplied in the JEDEC TO-204AA steel package and the RFP-types in the JEDEC TO-220AB plastic package. The RFM and RFP series were formerly RCA developmental! numbers TA9291 and TA9292, respectively. File Number 1447 $ 9209-331 N-Channel Enhancement Mode TERMINAL DESIGNATIONS RFM8N18 RFM8N20 DRAIN SOURCE (FLANGE) O O GATE 92CS-37801 JEDEC TO-204AA RFP8N18 RFP8N20 SOURCE ORAIN (FLANGE) DRAIN -O- GATE TOP VIEW E 92cs-39528 JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (T.=25C): RFM8N18 RFMSN20 RFPSN18 RFPSN20 DRAIN-SOURCE VOLTAGE................. Voss 180 200 180 200 v DRAIN-GATE VOLTAGE (Ries = 1MQ)....... Voca 180 200 180 200 v GATE-SOURCE VOLTAGE............ seen Ves +20 Vv DRAIN CURRENT RMS Continuous ......... Io 8 A PUISED ....c cece eee ee eee eee lon 20 A POWER DISSIPATION .........-..eseeeeeees @ Te = 25C Pr 15 75 60 60 Ww Derate above Te = 25C 06 0.6 0.48 0.48 WG OPERATING AND STORAGE TEMPERATURE T;, Tat -55 to +150 c 0.7 SOt<iS;]3875081 G E SOLID STATE on ef aa7soax 0018138 5 Bor29-/! _ Standard Power MOSFETs RFM8N18, RFM8N20, RFP8N18, RFP8N20 ELECTRICAL CHARACTERISTICS At Case Temperature (T.) = 25C unless otherwise specified LIMITS a RFMEN18 RFM8N20 ; TEST RFPSN18 REP8N20 CHARACTERISTICS SYMBOL CONDITIONS MIN. | MAX.| MIN. | MAX, | UNITS lp = Drain-Source Breakdown Voltage BVoss V um 180 - 200 - V es = Ves = Vos Gate Threshold Voltage Vesitn 2 4 2 4 Vv lbb=imA Vos = 145 V _ 1 - _ Zero Gate Voltage Drain Current Vos = 160 V _ 1 loss Te = 126C LA Vos = 145 V - 50 - _- Vos = 160 V _ - - 50 Gate-Source Leakage Current lass Vas = + 20'V - 100 - 100 nA Vos = 0 ve 4 oy ~ | 20] | 20 Drain-Source On Voltage Vos(on)* Ss v ID=8A _ 55 _ 55 Vas = 10V , Static Drain-Source On Resistance ros(on)* ID=4A _ 05 _ 05 Q Ves =10V Forward Transconductance Ors" Vos = i 1.5 _ 1.5 _ mho p= Input Capacitance Cos Vos = 25 V - 750 750 Output Capacitance Coss Ves = OV - 250 - 250 pF Reverse Transfer Capacitance Crs f= 1MHz _ 70 _ 70 Turn-On Delay Time ta{on) Voo = 100 V 30(typ.) | 45 | 30(typ.)| 45 Rise Time t lb=4A 100(typ.)| 150 | 100(typ.)/ 150 ns Turn-Off Delay Time ta(off) Rogen = Ros = 50 Q] 90(typ.) | 185 | 90(typ.)| 135 Fall Time th Ves=10V [70(typ.)| 105 | 70(typ.) | 105 RFM8N18 , _ 1.67 _ 1.67 Thermal Resistance REM8N20 8 ReJC C/W Junction-to-Case RFP8N18, 2.083 _ 2.083 RFP8N20 , , SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS . LIMITS TEST RFM8N18 RFM8N20 CHARACTERISTIC SYMBOL CONDITIONS RFP8N48 REP8N20 UNITS Min. Max. Min. Max. Diode Forward Voltage Vsp* Isp = 4A 14 _ 1.4 Vv Reverse Recovery Time tr le = 4A 225(typ.) 225(typ.} ns dir/dy = 100A/us *Pulsed: Pulse duration = 300 ys max., duty cycle = 2%. 81o1 vefsa7soa1 oorar3za9 2 3875081 GE SOLID STATE. O1E ~39- Standard Power MOSFETs : Lee 184 39 oT I RFM8N18, RFM8N20, RFP8N18, RFP8N20 a| CASE TEMPERATURE (Tc}=25C (CURVES MUST BE DERATED - LINEARLY WITH INCREASE [IN TEMPEMPERATURE) 3 2 - n 4 i & = 3 z ag 4 a 4 e 2 a4 66 ' 10 oo boog DRAIN-TO-SOURCE VOLTAGE 92CS-36161A1 Fig. 1 Maximum safe operating areas for ali types. Vos Ima CASE TEMPERATURE 1 JUNCTION ityl-" 9208-34359 Fig. 2 Power vs. temperatura darating curve for all types. Fig. 3 Typical normalized gate threshold voltage as a function of junction temperature for all types. T= 4A.Veg= OV Vpg 210 PULSE 14] PULSE +80 us ouTY % 3 La - Pes gy Sa z ee & z= # Z 5 3 Z 5 ! 2 4 7 8 za JUNCTION TEMPERATURE {T))-"C . GATE = TO - SOURCE VOLTAGE [Vgg) -V $208-34100 92cs-36162 Fig. 4 - Normalized drain-to-source on resistance to junction tem- Fig. Typical transfer characteristics for all types. perature for ali types. 823875081 GE SOLID STATE O14 ve Bf ssz7sna2 QOLS14O 3 i "O16 18140 DT S9-// Standard Power MOSFETs T T T T 10 8oss GATE SOURCE r VOLTAGE 48 150 Yeo = Yoss RL = 250 Yoo = Voss z Z ig (REF) = 045 ma 46 s Vag = 10V 1 100 Gs 2 Pn 075 Voss 075 Ypss- da 80 Voss 0 50 Voss: 0.25 Voss 0 25 Voss 50. H] 42 DRAIN SOURCE VOLTAGE 0 o Ig (REF Ig HER) a ae Tg tach 8075 ach Fig. 6 - Normalized switching waveforms forconstant gate-current drive. c r) o 2 a * g = oO 4 . 2 3 : a 8 z 5 a & u 8 & 5 3 8 : 2 , z a @ a drain cui FORWARD TRANSCONDUCTANCE tafl-mho TIME Microsecongs Vos 710 PULSE TEST PULSE DURATIONSEO 1.5 DUTY CYCLE <2% DRAIN CURRENT (Ip}A rrent for all types. 92cs-37681 9205-36167 Fig. 8 - Typical drain-to-source on resistance as a function of current for all types. Voltn Gs RFM8N18, RFM8N20, RFP8N18, RFP8N20 PULSE TEST PULSE DURATION =60 p58 OUTYCYCLE <2% CASE TEMPERATURE (T, 6 24 no DRAIN CURRENT (Iq)-A. 2 3 DRAIN=T0SOURCE VOLTAGE (Vps}-V 9205-36165 Fig. 7 Typical saturation characteristics for all types. % % ( s w 8 a 6 5 401 DRAW -TO-SOURCE VOLTAGE (pg)- 9265-36164 Fig. 9 Capacitance as a function of drain-to-source voltage for all types, 252 Pod Db 1 TO SCOPE | | = Vop x | 100 I | KELVIN 1 | CONTACT . . I | ( ry | i 2 3 s 5 6 7 | ! Beye eg 8 Fe me me = - ORAIN CURRENT (Ip)A 92CS-37373 Z, 2 B2C$- 36165 . Fig. 10 Typical forward transconductance as afunctionofdrein Fig. 11 Switching Time Test Circuit. oo 83