Transistors
1
Publication date: March 2003 SJC00065BED
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SB1030 VCBO IC = −10 µA, IE = 0 −30 V
(Emitter open)
2SB1030A
−60
Collector-emitter voltage 2SB1030 VCEO IC = −2 mA, IB = 0 −25 V
(Base open)
2SB1030A
−50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7V
Collector-base cutoff current (Emitter open)
ICBO VCB = −20 V, IE = 0 − 0.1 µA
Collector-Emitter cutoff current (Base open)
ICEO VCE = −20 V, IB = 0 −1µA
Forward current transfer ratio hFE1 *VCE = −10 V, IC = −150 mA 85 340
hFE2 VCE = −10 V, IC = −500 mA 40
Collector-emitter saturation voltage VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.60 V
Transition frequency fTVCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 3.5 15.0 pF
(Common base, input open circuited)
2SB1030, 2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
■Features
•Optimum for high-density mounting
•Allowing supply with the radial taping
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage 2SB1030 VCBO −30 V
(Emitter open)
2SB1030A
−60
Collector-emitter voltage 2SB1030 VCEO −25 V
(Base open)
2SB1030A
−50
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC− 0.5 A
Peak collector current ICP −1A
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45+0.20
–0.10
7.6
3.0±0.2
(0.8)(0.8)
15.6±0.5
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
2SB1030, 2SB1030A
2SJC00065BED
VCE(sat) IChFE ICfT IE
PC TaIC VCE VBE(sat) IC
Cob VCB NV IC
0 16040 12080
500
400
300
200
100
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0−12−10−8−2−6−4
0
−1.2
−1.0
−
0.8
−
0.6
−
0.4
−
0.2
T
a
= 25°C
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
I
B
= −10 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
− 0.01
− 0.1 −1−10
− 0.01
− 0.1
−1
−10
−100 I
C
/ I
B
= 10
T
a
= −25°C
75°C
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
− 0.01
− 0.1 −1−10
− 0.01
− 0.1
−1
−10
−100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
− 0.01
− 0.1 −1−10
0
600
500
400
300
200
100
V
CE
= −10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
0.1 1 10 100
0
160
120
40
80
V
CB
= −10 V
T
a
= 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)
−1−10 −100
0
20
16
12
8
4
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
−10 −100 −1 000
0
240
200
160
120
80
40
V
CE
= −10 V
T
a
= 25°C
Function = FLAT
4.7 kΩ
R
g
= 100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current I
C
(µA)
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2002 JUL
