BC141-16
GENERAL PURPOSE TRANSISTOR
DESCRIPTION
The BC141-16 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
particularly designed for audio amplifiers and
switching application up to 1A.
The complementary PNP type is the BC161-16.
INT E R NAL SCH E M ATI C DIAG RA M
January 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 1 A
IBBase Current 0.1 A
Ptot Total Dissipation at Tamb ≤ 25 oC
at TC ≤ 25 oC0.65
3.7 W
W
Tstg Storage Temperature -55 to 175 oC
TjMax. Operating Junctio n Te mperature 175 oC
TO-39
®
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient Max
35
200
oC/W
oC/W
ELE CT RICAL CHAR ACT ERIST I CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 60 V
VCE = 60 V TC = 150 oC100
100 nA
µA
V(BR)CBO∗Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100 µA100 V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 30 mA 60 V
V(BR)EBO∗Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA7V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC = 100 mA IB = 10 mA
IC = 500 mA IB = 50 mA
IC = 1 A IB = 100 mA
0.1
0.35
0.6 1
V
V
V
VBE(on)∗Base-Emitter On
Voltage IC = 1 A VCE = 1 V 1.25 1.8 V
hFE∗DC Current Ga in IC = 100 µA VCE = 1 V
IC = 100 mA VCE = 1 V
IC = 1 A VCE = 1 V 100 90
160
30 250
fTTransition Frequency IC = 50 mA VCE = 10 V 50 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = 5 V f = 1 MHz 12 25 pF
ton Turn-on Time IC = 10 0 mA IB1 = 5 mA 250 ns
toff Turn-off Time IC = 10 0 m A IB1 = IB2 = 5 mA 850 ns
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 1 %
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D C Curent Gain. Transiition Frequency.
Collector-emitter Saturation Voltage. Base-emitter Voltage.
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
o
(typ.)
L
G
I
D A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third part ies which may re sult from its use . No li cen s e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplie d. STMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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