Power and sensing
Selection guide 2020
IoT-Security
Charger
www.infineon.com/powerandsensing-selectionguide
Dear reader,
The era of convergence is here. The trends of the past – such
as energy eiciency and security – are now global challenges:
how do we sustainably feed our needs in mobility, IoT and
big data? Together, these questions transform life as we
know it, intertwining technology with humanity.
From the cloud and the edge, personal vehicles and power
tools, to drones and satellites, thousands of systems we
use every day rely on eicient and intelligent power. Our
next generation of silicon solutions and our wide-bandgap
portfolio, including CoolSiC™ and CoolGaN™ devices, provide
unparalleled performance and reliability for 5G, big data
and renewable energy applications. The cooler, smaller
and lighter MERUS™ audio amplifiers enable customers to
achieve better-sounding systems and deliver exceptional
audio performance in smart speakers and other audio home,
portable and professional audio products.
Collectively, we are building towards a new age of interaction
with multiple devices. These need to perceive and respond
to events while steadily extending and enhancing their
performance to further ease our lives. We meet this challenge
with intuitive sensing - by giving things human-like senses
for a greater contextual awareness. Founded on Infineon’s
40 years of experience in the development of sensor
products, our XENSIV™ products deliver exceptional accuracy
and best-in-class measurement performance. Spanning
magnetic, pressure, acoustic, 3D image (REAL3™) and radar
sensor MMICs (RASIC™ for automotive), our broad XENSIV™
portfolio ensures the perfect fit for all performance and
integration needs – regardless of the industry.
Building on the company’s in-depth system understanding,
the 2020 edition of the Power and Sensing Selection Guide
oers a comprehensive selection of power and sensors
system solutions for your future success.
尊敬的读者:
“大融合”时代已然到来。以往的一些发展趋势（诸如能源效率
和安全性等）现已成为全球性挑战：我们如何才能秉承可持续性
发展理念来满足我们在移动交通、物联网和大数据方面的需求？
这些问题的演进为我们的生活带来了巨大变革，将科技与人类
生活交织在一起。
从云端和先进的私家车和动力工具，到无人机和卫星，我们每天
使用的无数系统都离不开高效、智能的电源。我们下一代硅解决
方案和我们宽带隙产品组合（包括 CoolSiC™ 和 CoolGaN™ 设
备）为 5G、大数据和可再生能源应用提供了无与伦比的性能和
可靠性。利用更酷、更小和更轻的 MERUS™ 音频放大器，客户可
以实现音质更佳的系统，在智能扬声器和其他音频家电、便携和
专业音频产品中提供卓越的音频性能。
总而言之，我们正在迈向一个与多个设备交互的新时代。这些
设备需要感知和响应事件，同时稳定地扩展和增强其性能，让
我们的生活变得更加轻松惬意。我们赋予事物类似于人类的
感知、通过直观感知来应对此项挑战，从而获得更佳的情境意
识。 依托英飞凌在传感器产品开发领域长达 40 年的经验，我
们的 XENSIV™ 产品提供卓越的精确性和一流的测量性能。我
们丰富的 XENSIV™ 产品组合涵盖磁性、压力、声学、三维图像
(REAL3™) 和雷达传感器 MMIC（用于汽车行业的 RASIC™）。无
论何种行业，这些产品均可确保完美满足所有性能和集成需求。
《2020 电源与传感选型指南》以公司对系统的深厚了解为基
础，提供综合全面的电源和传感器系统解决方案，助力您走向成
功的未来。
Andreas Urschitz,
Division President of Power and Sensor Systems
电源和传感系统事业部总裁
Connectivity and linking the real to the digital
world is no longer a dream – it is a lived reality.
Future is something we create together to make
life easier, safer, and greener.
连接真实世界和数字世界不再是一个梦想，
而是活生生的现实。未来由我们共同创造，
让生活更轻松、更安全、更环保。
Andreas Urschitz,
Division President of Power and Sensor Systems
电源和传感系统事业部总裁
4
Applications
Advanced system solutions for consumer applications 6
Class D audio amplifiers 8
Major home appliances 10
Smart speaker 14
Robotics 18
SMPS - TV power supply 21
SMPS - mobile charger 24
Wireless charging 25
Wearables and healthtech 30
SMPS and digital power management
solutions for data processing applications 32
DC-DC enterprise power solution
for data processing applications 34
SMPS - laptop adapters 37
SMPS - PC power supply 39
SMPS - server power supply 40
SMPS - telecom power supply 42
Advanced system solutions for industrial applications 46
Smart building 48
Power over Ethernet 50
LED lighting 52
Power and gardening tools 54
Battery formation 56
Energy storage systems 58
Solar 60
Uninterruptible power supply 64
SMPS - embedded power supply 69
SMPS - industrial SMPS 70
Advanced system solutions
for transportation and infrastructure 72
Fast EV charging 74
E-mobility 78
Light electric vehicles and forkli 82
Multicopter 84
Contents
- V MOSFETs 
- V MOSFETs 
Wide bandgap semiconductors 
Discrete IGBTs 
Power management ICs 
Intelligent power switches and modules 
Gate driver ICs 
Microcontrollers 
XENSIV™ sensors 
Packages 
5
For more details on the product,
click on the part number.
We make life easier, safer and greener – with technology that achieves more,
consumes less and is accessible to everyone.
From product thinking to system
understanding
Infineon enables e icient generation, transmission and conversion
of electrical energy
www.infineon.com/power
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
6
For more details on the product,
click on the part number.
› Class D audio amplifiers
› Major home appliances - air conditioning and induction cooking
› Smart speaker
› Service robots
› SMPS – TV power supply
› SMPS – mobile charger
› Wireless charging
› Wearables and healthtech
Advanced system solutions
for consumer applications
Applications
7
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
8
For more details on the product,
click on the part number.
Class D audio amplifiers
No compromise on quality – products for exceptional audio performance
Class D audio
www.infineon.com/merus
www.infineon.com/audio
At Infineon, we manufacture power-eicient class D audio amplifier solutions that maintain best-in-class audio quality,
without heating up the surroundings. We believe smaller and lighter is better, and that the amplifier embedded in your
product should be heard, but not seen. Our amplifier solutions help you design robust, flexible products that meet the
needs of your customers and the market. Choose from our high-performance class D audio amplifier solutions for all
power ranges and application requirements, from the smallest fully integrated single-chip solutions to highly scalable
driver and power MOSFET combinations (for full portfolio of audio amplifier ICs, see pages 236-240).
Home audio
Modern home audio products vary in shapes, sizes and configurations, but common requirement is great sound in combination
with outstanding industrial and acoustic design. In addition to producing exceptional sound quality, MERUS™ amplifiers from
Infineon can completely eliminate the need for bulky and expensive LC output filters and heatsinks. This allows design of new
innovative and great sounding home audio products in form factors and shapes that were previously unthinkable.
Solution example: 2.1 configuration (2xBTL + 1xPBTL) 4.1 configuration (4xBTL + 1xPBTL)
Design with Infineon’s solutions to benefit from:
Exceptional audio
performance
Maximized
power eiciency
Maximized
output power
Design
freedom
Fast
time to market
Battery powered speakers:
› On-the-go Bluetooth speakers
› Docking speakers
› Boom boxes
› Wearable speakers
› Multiroom systems
› Audio hub
› TVs
› Sound bars
› Home theater systems
› Smart speakers
› Power-over-ethernet (PoE)
audio systems
› Touring amplifiers
› Active speakers
› Public announcement 70-100 V systems
› Music instrument amplifiers
Portable/battery powered
audio applications
Home audio
applications
Professional audio
applications
Solution specification
Number of audio channels: 2 bridge-tied load (BTL)
and 1 parallel BTL channels
Peak power output: 2x80 W @ 4 Ω, 10% THD and
160 W @ 2 Ω, 10% THD
Featured audio ICs: 2x MA12070
Solution specification
Number of audio channels: 4 bridge-tied load (BTL)
and 1 parallel BTL channels
Peak power output: 2x80 W @ 4 Ω, 10% THD and
160 W @ 2 Ω, 10% THD
Featured audio ICs:MA12040, MA12070 and IR4302M
MA12070 MERUS™
integrated audio
amplifier IC
MA12070 MERUS™
integrated audio
amplifier IC
Wireless connection
e.g., WiFi
Powersupply unit
MA12040 MERUS™
integrated audio
amplifier IC
MA12070 MERUS™
integrated audio
amplifier IC
IR4302M MERUS™
integrated
audio amplifier IC
Wireless connection
e.g. WiFI
Power supply unit
9
For more details on the product,
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Portable audio
When designing portable/battery powered audio devices, it is essential to maximize battery playback time, and at the
same time, maintain an excellent audio performance. Infineon’s MERUS™ amplifiers provide up to twice as long battery
playback time in combination with the best-in-class audio performance and unsurpassed sound quality.
Solution example: 2.1 configuration (2xSE + 1xBTL) Solution example: 2.1 configuration (2xBTL + 1xPBTL)
Professional audio
Professional audio equipment is all about maximizing output power and power density. With the conception of
Infineon’s MERUS™ multilevel class D technology and GaN-based CoolGaN™ e-mode HEMTs, it is now possible to
conceive both amplifiers and power supply units with great audio performance and high eiciency in a very compact
design. For engineers developing amplifiers, Infineon oers both monolithic and chip-set solutions with versatile
MOSFET combinations for the scaling of output power.
Solution specification
Number of audio channels: 2 single-ended (SE) and
1 bridge-tied load (BTL) channels
Peak power output: 2x10 W and 40 W @ 4 Ω, 10% THD
Featured audio IC: MA12040P including volume control
and limiter
Solution specification
Number of audio channels: 2 bridge-tied load (BTL) and
1 parallel BTL channels
Peak power output: 2x40 W @ 4 Ω, 10% THD and
160 W @ 2 Ω, 10% THD
Featured audio ICs: MA12040P and MA12070P including
volume control and limiter
Bluetooth
Battery powerunit
MA12040P MERUS™
integrated audio
amplifier IC
MA12040P MERUS™
integrated audio
amplifier IC
MA12070P MERUS™
integrated audio
amplifier IC
Bluetooth
Battery powerunit
Solution example: active speakers
Solution example: public announcement 70-100 V system
Solution specification
Number of audio channels: 2 half-bridge channels
Peak power output: 500 W @ 4 Ω, 1% THD
Featured audio ICs: IRS2092S, IRS20957S
Solution specification
Number of channels: 2 half bridge channels
Peak power output: 500 W, 70 Vrms/100 Vrms, 1% THD
Featured audio IC: IRS2452AM
For full product portfolio, see 234-238.
IRS2092S/
IRS20957S
and MOSFET
in parallel
MixerLevel
adjustment
IRS2452AM
and
MOSFET
HPF
&
ATT
Analog
input
70 V/100 V
Step-down
transformer
Speaker (4/8 Ω)
www.infineon.com/audiosolutions
Class D audio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
10
For more details on the product,
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Major home appliances
Product designers are facing the daunting challenge of developing smaller, smarter, more powerful, and more
energy-eicient appliances. Based on industry-leading technology and manufacturing expertise, Infineon’s line
of innovative components for household appliances meets and exceeds even the most rigorous requirements for
reliability and quality. The block diagram of an air conditioning system shown below, together with the product
selection table, provides an eective recommendation for engineers to select the right component for each
power management stage inside major home appliances.
In addition to eiciency gain through power solutions, Infineon’s XENSIV™ sensor portfolio also enhances the
operation of major home appliances through advanced sensor-enabled use cases such as condition monitoring and
predictive maintenance to detect potential device failures before they occur. Furthermore, integration of voice control
or presence detection in those appliances increases user convenience and results in even more eicient devices.
Major home appliances
Innovative approach for air conditioning
Rectification
Power management
DC
supply
User interface
&
communication
Central control
unit
Gate driver ICs
MCU
AF discretes Sense and monitor Rotor position detection
Driver stage
M
IGBT
Plu
g
www.infineon.com/homeappliance
Product category Product family Benefits
Sensors XENSIV™ MEMS microphones IM69D130 High performance microphone with low self-noise (high SNR) and low distortions enables noise
monitoring for advanced predictive maintenance analytics
XENSIV™ digital barometric pressure sensors DPSxxx Advanced predictive maintenance analytics are enabled based on highest precision and relative
accuracy over a wide temperature range to detect anomalies in air flow
XENSIV™ TLV493D-A1B6 3D magnetic sensor Accurate three-dimensional sensing with extremely low power consumption in a small 6-pin
package to enable vibration and position monitoring of the compressor
XENSIV™ TLI4970 current sensor Fully digital solution featuring high precision and ease of use, significantly reduces overall imple-
mentation eorts as well as PCB space to enable cost fan and compressor current measurement
Radar sensor XENSIV™ 60 GHz radar sensor Accurate presence detection and vibration detection based on ability to track sub-millimeter
motion at high speed and accuracy, in both stand-alone chip as well as system solution available
11
For more details on the product,
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Recommended products
Functional block Topology Voltage class Technology/product family Selection/benefit
PFC AC-DC
IGBT – PFC CCM (high frequency – SC)
600V HighSpeed 3 Recommendation
IGBT – PFC CCM (low frequency – SC)
600V TRENCHSTOP™ Performance Recommendation
IGBT – PFC CCM (cost competitive – no SC)
650V TRENCHSTOP™ 5 – H5 Recommendation
IGBT – PFC CCM (low losses - SC)
650 V TRENCHSTOP™ IGBT6 Recommendation
IGBT – PFC 600 V TRENCHSTOP™ Advanced Isolation Recommendation
IGBT – PFC (cost competitive - no SC) 650 V TRENCHSTOP™ 5 WR5 Recommendation
MOSFET – PFC CCM 600V CoolMOS™ P7 Reference
Diode – PFC CCM 650V Rapid 1 and Rapid 2 diodes Recommendation
Controller – PFC CCM – ICE2PCS0xG, ICE3PCS0xG Recommendation
IPM – PFC CCM 650 V CIPOS™ Mini PFC interleaved IPM series,
CIPOS™ PFC integrated IPM series
Recommendation
Low-side gate driver IC – PFC 25 V
Single low-side driver EiceDRIVER™
1ED44176N01F, 1ED44175N01B,
1ED44173N01B *
OCP, fault and enable function
in DSO-8/SOT23-6
Dual low-side driver IRS4427S Rugged and reliable in DSO-8
Single low-side driver IRS44273L Rugged and reliable in SOT23-5
Half-bridge gate driver – totem pole PFC 650 V EiceDRIVER™ 2ED2304S06F,
2ED2106S06F, 2ED2182S06F
SOI with integrated
bootstrap diode
DC-AC IGBT – B6-VSI 650V TRENCHSTOP™ IGBT6 Eiciency
IGBT – B6-VSI 600V RC-Drives Fast, RC-D2 * Recommendation
MOSFET - B6-VSI 600 V CoolMOS™ PFD7 Cost/performance
IPM – B6-VSI 600V CIPOS™ Mini Recommendation
Half-bridge gate driver ICs 650 V EiceDRIVER™ 2ED2304S06F,
2ED2106S06F, 2ED2182S06F
SOI with integrated
bootstrap diode
Half-bridge gate driver ICs 600 V
EiceDRIVER™ 2EDL05I06PF, 2EDL23I06PJ,
IRS2890DS, 2ED28073J06F *
Integrated bootstrap diode/FET
Three-phase gate driver ICs 600 V 6EDL04I06PT, IR2136S, 6ED003L06-F2 OCP, fault and enable function
AUX Flyback fixed frequency 700V CoolSET™ F5 * Recommendation
Microcontroller/motor control IC 32-bit Arm® Cortex®-M4 - XMC4100/XMC4200 Recommendation
iMOTION™ - IRMCxx motor control IC
(incl. motion control algorithm)
Recommendation
Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211, IFX3008 Eiciency
Communication CAN transceiver - IFX1050, IFX1051, IFX1040 Robustness
Position sensing Angle sensor - TLE5009, TLI5012B Recommendation
Hall switch - TLI496x Recommendation
www.infineon.com/homeappliance
* For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
12
For more details on the product,
click on the part number.
Resonant-switching applications such as induction cooktops and inverterized microwave ovens have unique
system requirements. The consumer marketplace demands them to be cost-eective, energy eicient, and
reliable. To achieve the named goals, designers need solutions that are developed specifically for these
applications.
Infineon’s reverse conducting (RC) discrete IGBTs were developed for resonant switching with a monolithically
integrated reverse conducting diode. With technology leadership and a broad portfolio of devices with
voltage classes ranging from 650 to 1600V, Infineon provides the industry benchmark performance in terms of
switching and conduction losses.
The latest RC-H5 family, previously oered with blocking voltages of 1200 V and 1350 V in a wide current range
from 20 A to 40 A, is now with the addition of a new 1350 V, 20 A IGBT completed.
The Integrated Power Device Protect (IPD Protect), IEWS20R5135IPB, is a new device in Infineon’s portfolio for
induction cooking applications, which adds new functionalities to standard discrete IGBTs. The innovative IPD
Protect combines a 1350 V, 20 A IGBT in RC-H5 technology with a unique protecting gate driver IC in a TO-247
6-pin package.
The RC-E family is cost- and feature-optimized specifically for low- to mid-range induction cookers and
other resonant applications. This new family oers Infineon’s proven quality in RC IGBTs with the best price-
performance ratio and ease of use. Infineon also oers a range of complementary products, such as low-side
gate drivers and high-voltage level-shi gate drivers which can be used with the IGBTs, as well as in the central
control and power supply subsystems of induction cooking appliances.
Induction heating inverter (current resonance) Induction heating inverter (voltage resonance)
Major home appliances
Highest performance and eiciency for induction cooking
Single switchHalf-bridge
AUX
MCU
Lres
Lf
RC-IGBT
Cbus
CK2
CK1
VAC
Cres
2
Cres
2
Lf
Cbus
VAC
AUX
MCU
RC-IGBT
Lres
Cres
RC-IGBT
Gate driver ICs
Gate driver ICs
AUX
MCU
Lres
Lf
RC-IGBT
Cbus
CK2
CK1
VAC
Cres
2
Cres
2
Lf
Cbus
VAC
AUX
MCU
RC-IGB
T
Lres
Cres
RC-IGBT
Gate driver ICs
Gate driver ICs
www.infineon.com/homeappliancewww.infineon.com/homeappliance
Major home appliances
13
For more details on the product,
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Induction heating Topology Voltage class Technology/product family Selection/benefit
DC-AC Series-resonant half-bridge 650V RC-H5 Recommendation
Quasi-resonant single switch 1100V RC-H3 Recommendation
Quasi-resonant single switch 1200V RC-H5, RC-E Recommendation
Quasi-resonant single switch 1350 V RC-H5 Recommendation
Quasi-resonant single switch 1600 V RC-H2 Recommendation
Quasi-resonant single switch and protective driver
1350 V RC-H5/IPD Protect Integrated power device
Gate driver ICs Low-side gate driver 25 V EiceDRIVER™ 1ED44176N01F,
1ED44175N01B, 1ED44173N01B,
IRS44273L
1ED integrated with OPC, fault and enable
functions
Half-bridge gate driver 650 V/600 V EiceDRIVER™ 2ED2304S06F,
2ED2106S06F, 2ED2182S06F,
2EDL23I06PJ
SOI with integrated bootstrap diode
Isolated gate driver 1200 V EiceDRIVER™ 1EDI20I12AF,
1EDI20I12MF, 2ED020I12-F2
Galvanic isolation, separate sink/source
output, DESAT, Miller clamp
Microcontroller 32-bit Arm® Cortex®-M0 - XMC1302 Recommendation
Microcontroller supply Linear voltage regulator Up to 20V IFX54211 Eiciency
AUX Fixed-frequency flyback 700V CoolSET™ F5 * Recommendation
www.infineon.com/homeappliance
Recommended products
* For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
14
For more details on the product,
click on the part number.
Once a novelty in households, speakers are more and more becoming a norm. With this rapid adaptation, user
expectations are rising and the frustration with devices that are not understanding or hearing commands leads
to lower usage rates and growth below its full potential. Components such as MEMS microphones and new
technologies such as radar are key to improving the user experience in the smart speaker segment.
Infineon has a long-standing expertise in both sensor and power solutions that fulfill the consumer market
requirements in terms of outstanding performance as well as reliable customer service and operations.
Application diagram
Smart speaker
Design speakers for an intuitive and outstanding user experience
Smart speaker
Features and benefits
Key features
Low self-noise (high SNR) and distortion, a wide dynamic range, plus a high
acoustic overload-point microphone
Infineon’s proprietary multilevel switching technology at fully rated power
in a wide range of audio products
Ultrahigh power eiciency and cool operation of the audio amplifiers
Highly eicient and power-dense SMPS solutions
Key benefits
Improved audio input and thus command recognition, especially in extended use
cases such as whispering or longer distances to the speaker for better user experience
Enables very low power loss under all operating conditions and enables the
class D audio amplifier to be used in filterless configurations
Extended battery playback time or the reduction of battery size without com-
promising on battery playback time to save cost
Highly eicient charger in small form factor
www.infineon.com/voiceinterface
Application processor
Charger or internal power supply
Temperature
sensor
Light sensor
Touch
controller
RAM
memory
DSPMicrophone Amplifiers
LED driver
60 GHz radar
RF switch
WiFi/BT
Flash
memory
Power output
DC
Main stage
AC
Vin Vout
SwitchRectification
SR and protocol control
Primary side PWM control
15
For more details on the product,
click on the part number.
www.infineon.com/voiceinterface
Recommended products
Functional block Product family Topology Product Benefits
Audio input Microphones - XENSIV™ MEMS microphones
IM69D130
› High performance microphone with low self-noise (high
SNR) and low distortions represents a new benchmark
in performance enabling superior user experience
Audio output Class D amplifier - MERUS™ class D audio
amplifiers MA120xx
› Cooler, smaller and lighter amplifiers designed to
maximize power eiciency and dynamic range while
providing best-in-class audio performance in product
form factors for great sounding audio products
Presence detection Radar sensor - XENSIV™ 60 GHz radar sensor › Accurate presence detection and vibration detection
based on ability to track sub-millimeter motion at high
speed and accuracy, both stand-alone chip as well as
system solution available
SMPS -
Flyback converter
High voltage MOSFETs Flyback 700 V CoolMOS™ P7
(standard grade)
› Best price-competitive CoolMOS™ SJ MOSFET family
› Lower switching losses than a standard MOSFET
ACF, FMCI 600 V CoolMOS™ PFD7 › Lower Qrr, lower hysteresis loss, low RDS(on)
Control ICs QR flyback ICs ICE5QSAG › High eiciency and low standby power
FFR flyback IC XDPS21071 › High power density and ideal for USB-PD
SMPS -
Synchronous
rectification
Low voltage MOSFETs Synchronous rectification OptiMOS™ PD › Low conduction losses and reduced overshoot
› Logic level switching/S308/PQFN 3.3x3.3 packages
available
Control ICs Synchronous rectification IR1161LTRPBF › High eiciency / simple external circuitry
SMPS -
Load switch
Low voltage MOSFETs Load switch OptiMOS™ 30 V › Low conduction losses
› S308/PQFN 3.3x3.3 packages available
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
16
For more details on the product,
click on the part number.
Smart home
Smart home
Smartifying homes the secured way
How does a smart home dier from a regular home? A smart home is equipped with technologies that make our lives
more convenient and energy eicient. Today, the growing range of technologies encompasses smart home appliances,
mobile devices and home automation systems, many of which are interconnected. But being ‘smart’ in this sense
requires appliances and systems fitted with the right semiconductor solutions. They empower smart appliances,
devices and systems to make sense of their environment and current situation. Working together, sensors, controllers
and actuators enable members of a smart home to properly collect, interpret and process real-time data, then trigger
the appropriate action or response. In an age of mounting security threats, security solutions keep all activities and
system secured and out of harm’s way.
From intelligent lighting control to optimized energy consumption, each smart home function depends on intelligent
semiconductors. As this rapidly changing field continues to evolve and mature, having a reputable and reliable partner
in smart home semiconductor technologies such as Infineon makes all the dierence.
Benefit from our smart home expertise
Smart home security
Smart home appliances
Surveillance and detection
Smart air conditioning Data privacy Smart lighting
www.infineon.com/smarthome
Our in-depth system know-how coupled with
our market expertice means you get application
specific solutions that are best in class
Unparalleled system
knowledge
Lasting reliability
Easy-to-integrate solutions We enable you to reduce your time-to-market
thanks to easy-to-integrate products and a
strong global support team for your designs.
With a proven track record, our high-quality
products help keep our customers’ business
uncertainty at a minimum.
17
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Infineon’s leading portfolio of best-fit, ready-to-use semiconductor solutions empowers you to create innovative
smart home applications that meet both current and future demands. You can count on our components to be smart,
secured and energy eicient. In our one-stop shop, you will find all components and solutions required for your
project. Furthermore, our products are easy to integrate into your designs.
As you forge new, unexplored territory in the smart home realm, our in-depth know-how of our components and their
potential in smart homes and home automation systems enable us to support you through and through. At the cutting-
edge of key smart home technologies, we are in the position to guide you through this exciting new market while you
explore new opportunities and business models. Especially those new to smart homes will appreciate our easy-to-use
smart home demo and our basic oering of solutions.
How Infineon’s oering enhances your project
www.infineon.com/smarthome
Contextual sensitivity with
market-leading accuracy and
reliability. For more natural,
seamless interaction between
humans, machines and the
surroundings.
Advanced
sensing
Ensure optimized system
performance thanks to our deep
system understanding and
strong processing and steering
know-how. The result: an
excellent user experience.
Cross-
application
control
Our innovative power
electronics technologies allow
users to save energy and run
applications at a market-leading
low energy level. It’s the basis
for real green smart homes.
Eicient
power
management
The right, easy to implement
security solutions for smart,
always secured homes. We meet
your design’s evolving security
needs without compromising on
convenience.
Trusted
security
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
18
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Disruptive technologies have significantly changed our lifestyle in the past few decades. Now a new era is on the
horizon – the age of robots. Robots are joining the ranks of innovative and disruptive technologies by revolutionizing
traditional habits and processes. Today’s robots are able to identify and navigate through surroundings, work
alongside and even interact with humans. Moreover, they teach themselves the skills required to complete a new task.
All this would not be possible without semiconductor solutions. Whether in an industrial robot, a cobot, an
automated guided vehicle (AGV) or a service robot, intelligent semiconductors are the key enabler for all major
robotic functions.
Drawing on our insight into all facets of the robotics field, and with a comprehensive portfolio of
power products and sensors on oer, we are able to provide reliable system solutions that address the latest trends in
robotics like artificial intelligence, the Internet of Things, smart home, cloud based services, human machine interface
etc., and add value to nearly every robot design.
Robotics
Superior solutions for industrial and service robotics
www.infineon.com/service-robotics
Robotics
The latest generation of domestic
robots is ushering in a new level of
assistance and simplicity in homes
and professional environments.
They directly interact with
humans, which introduces unique
challenges from a design
perspective, especially in domestic
environments. Energy eiciency,
long battery life as well as security
aspects and sensing capabilities
are key to user-friendly and safe
designs.
By choosing Infineon, you get a
one-stop semiconductor shop for all
your service-robot design needs.
Structural system overview: domestic robots
Motor
sensing
Motor
sensing
Motor
sensing
Other
motors
Blower/
blade motor
Wheel
motor
Motor
drive
Motor
drive
Motor
drive
Human
machine
interface
WLAN/BT/GPSWLAN/BT/GPS
Main
controller
Security
controller
Power DC-supply (24 V/36 V/48 V/54 V) AUX DC-supply (12 V, 5 V, 3.3 V, …) Central COM bus (Ethernet, CAN, IC, SPI, …)
Drives
110/230 V~
AC grid
Remote control
monitoring
Smartphone/
tablet/computer
AUX supplies
› 12 V
› 5 V, 3.3 V
› Others
Service robot Charger
(can be on board)
Domestic robots - simplifying everyday life and work
Features and benefits
Key features
Fast time to market
Complete solutions – broad portfolio
Extended battery lifetime and product life spans
Overall system size and cost reduction
Security, quality, and safety
Authentication
Key benefits
A complete eco-system of simulations, documentation, and demonstration boards enable a faster time to market
Whatever design specification, Infineon has the answer thanks to its comprehensive portfolio of products and
solutions which you can easily tailor to your needs
High reliability of Infineon components results in prolonged product life spans
Reduction of overall system size and cost thanks to small form factor and compact design of components, both of
which are required for highest power density
BOM savings thanks to lowest RDS(on)
Trustworthy hardware-based security
As a security market leader with a proven track record and outstanding partner network for embedded security,
Infineon provides highest quality standards and a safety-certified development process
OPTIGA™ Trust enables authentication of components connected to the system (e.g., battery pack
recognition to avoid second-party batteries)
19
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Robotics
Cobots, or collaborative robots, work
outside the limitation of a safety
cell, in a direct interaction with real
people. This setup requires a precise
set of design features, especially
for the sake of workplace safety.
With Infineon’s semiconductors for
cobot systems, you benefit from
the expertise of an experienced and
reliable partner. Our radar and sensor
solutions, for example, provide the
tools to uphold even the highest
safety standards and allow the
robots to leave their formerly fenced
working environment.
Structural system overview: cobots
Cobots – advance through collaboration
Mobile robots – driving production and logistics forward
www.infineon.com/service-robotics
Autonomous mobile robots (AMRs)
are a self-driving force behind
automated manufacturing
processes. Battery-powered systems
oer the highest degree of flexibility
within working environments.
Covering the entire product portfolio
for robotics applications – from
the power supply to motor drives
and sensors for navigation and
environment scanning – Infineon
is equipped to ensure AMRs can
find their way through nearly all
production environments.
Structural system overview: battery-powered mobile robots
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
20
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Robotics
www.infineon.com/service-robotics
Functional block Purpose Characteristics Component Type or Family
Power:
-Power supply
-Power factor correction (PFC)
-Charger
-Battery management
Power switches
(0.4-6 kW output power)
25-150 V OptiMOS™
20-75 V StrongIRFET™
P-/N-channel - 60 to 20 V Small signal MOSFETs
600-800 V CoolMOS™ P7
600 V CoolMOS™ C7
600 V CoolMOS™ CFD7
600 V CoolGaN™
600 V IGBT HighSpeed 5
PFC power diodes 650 V Schottky diode CoolSiC™
Integrated power stage 800 V CoolSET™
Gate driver ICs 200 V/650 V, half-bridge IRS2005M, IRS2007M, IRS2008M,
2ED2106S06F, 2ED2182S06F
20 V, non-isolated, low-side EiceDRIVER™ 1EDN/2EDN, 1ED44175, 2ED24427 *
650 V/1200 V, galvanic isolation EiceDRIVER™ 1ED Compact/1EDF2/
2EDF/2EDS
650 V/1200 V, three-phase EiceDRIVER™ 6EDL04, 6ED2230
Microcontroller Arm® Cortex®-M0 microcontroller XMC1100/XMC1300
Arm® Cortex®-M4 microcontroller XMC4200
Voltage regulators LDO and DC-DC switching regulators e.g., IFX1763, IFX90121
Battery authentication Hardware-based, embedded security OPTIGA™ Trust B
Motor control Motor inverter power switches <12 V, <400 W PROFET™
20-60 V StrongIRFET™
60 V SIPMOS™ *
25-100 V, <1 kW OptiMOS™
P-/N-channel MOSFETs ranging from -60 V to 20 V
Small signal MOSFETs
600 V, <500 W CoolMOS™ CFD7
650 V, <500 W CoolMOS™ CFD2
600 V/1200 V, <10 kW TRENCHSTOP™
1200 V, 10-20 kW CoolSiC™
Fully integrated, 600 V, 0.5-5 kW CIPOS™
Fully integrated, 600 V, <20 kW EasyPIM™
Fully integrated, 1200 V, 10-20 kW CoolSiC™ Easy1B *
Gate driver ICs 200 V/650 V, half-bridge IRS2005M, IRS2007M, IRS2008M,
2ED2106S06F, 2ED2182S06F
20 V, non-isolated, low-side EiceDRIVER™ 1EDN/2EDN, 1ED44175, 2ED24427 *
650 V/1200 V, galvanic isolation EiceDRIVER™ 1ED Compact/1EDF2/2EDF/2EDS
650 V/1200 V, three-phase EiceDRIVER™ 6EDL04, 6ED2230
Integrated gate driver ICs NovalithIC™
Automotive embedded power ICs TLE986x, TLE987x
Microcontroller Arm® Cortex®-M0 microcontroller XMC1000 microcontroller family
Arm® Cortex®-M4 microcontroller XMC4000 microcontroller family
TriCore™ Safety certified security on-chip AURIX™
Fully integrated motor control ICs iMOTION™
Position and condition sensing XENSIV™ magnetic Hall switches TLx496x
XENSIV™ angle sensor, digital I/F TLE/TLI5012B, TLE5014SP
XENSIV™ angle sensor, analog I/F TLE5009/5109/5309/5501
Sensing:
-Robot sensing
-Environment sensing
-Human machine interface
XENSIV™ 3D magnetic sensor, digital I/F TLV/TLE/TLI493D
XENSIV™ current sensor, digital I/F TLI 4970
XENSIV™ current sensor, analog I/F TLI4971
Object and condition sensing XENSIV™ pressure/temperature sensor, digital I/F DPS310
XENSIV™ 24 GHz radar sensor BGT24MTR11/12, BGT24MR2
XENSIV™ MEMS microphones, digital I/F IM69D120/IM69D130
XENSIV™ ToF 3D imaging @ 38-100 k pixel REAL3™ IRS1125C */IRS1645C/IRS2381C
Peripherals:
-WLAN/BT/GPS
-Human machine interface
Audio Class D audio amplifier IR43x1M, IR43x2M
Interface CAN, CAN FD, CAN PD @ 1-5 MBit/s Industrial CAN transceiver
Industrial interface ICs ISOFACE™
LED drivers Driving currents from 10-250 mA Linear driver ICs BCR3xx, BCR4xx
Support currents from 150 mA to 3A DC-DC switch mode ILD4xxx, ILD6xxx
Security and safety
-Motion controller (incl. safety)
-Security controller
Controller TriCore™ Safety certified with security on-chip AURIX™
Sensors Safe angle sensing - dual die structure e.g., TLE5009xxxD
Voltage regulators
DC-DC voltage regulator 12 V/5 V or 3.3 V; watchdog,
error monitoring, safe state control, BIST etc.
e.g., TLF35584
Security Hardware-based, embedded security solutions,
mutual authentication, secure communication,
key protection, data signing etc.
OPTIGA™ TPM/Trust B/Trust X
Recommended products
21
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TV power supply
www.infineon.com/smps
In addition to their outstanding image quality, new generation TVs gain attention for their user interface, low power
consumption, and slim design. This requires the power supply unit (PSU) to either keep a low profile to maintain the
slim appearance of a TV and a low thermal dissipation image or to have an external adapter. In addition, a growing
number of TV manufacturers will use external adapters to deliver DC power to the TV. Infineon introduced two
products based on digital power technology, designed to meet challenging eiciency and standby power requirements
for the IoT-enabled TVs (both embedded PSU and adapter).
Thanks to digital power, our customers can reduce the number of TV power supplies by adapting the digital IC
parameters to dierent TV and screen models by flexible and easy parameter setting. Infineon’s recently introduced
digital-based flyback controllers are ideal to implement in low-power adapters for TVs and monitors. With the digital
so switching, the adapter power density can be improved significantly. The 600 V CoolMOS™ P7 series has been
developed to cover a broad spectrum of dierent applications where the excellent performance and perfect ease of
use are required. The rugged body diode enables not only the use in hard-switching topologies, such as power factor
correction, boost, and two transistor forward, but also in resonant topologies such as LLC where the technologies lead
to high eiciency in both hard-switching and resonant circuits.
For higher on-state resistance (RDS(on)) classes, there is a new feature of an integrated ESD diode that helps improve the
quality in manufacturing. At the same time, the low RDS(on) and gate charge (QG) enable high eiciency in the various
topologies. The 600 V CoolMOS™ P7 comes with a wide variety of RDS(on)s and packages on consumer grade to make
it best suitable for TV power by balancing the cost and performance. Infineon developed specifically for TV power
supplies a family of packages, characterized by short lead, SOT-223 mold stopper, and wide creepage distance, which
enable our customers’ low-cost and reliable manufacturing.
Non-AUX digital solution for large screen size
High power solution for larger screen size
SMPS
Diversify TV power supply with cost, performance, and ease of use
Active
bridge
PFC + LLC combo
EMI
filter
LED driver IC
Audio
Main
board
2EDN gate driver 2EDN gate driver
Main boar
d
OLED
Active
bridge
EMI
filter
Interleave PFC controller LLC controller
AUX power
SMPS - TV power supply
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
22
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DC outputAC input
RectificationHV MOS
PWM
Flyback solution for small screen size
Recommended products
Functional block Product category Topology Product family Benefits
Main stage/PFC combo
non-AUX
High voltage
MOSFETs
Active bridge 600 V CoolMOS™ S7 › Body diode robustness at AC line commutation
› Improved thermal resistance
› Absolute lowest RDS(on) in the market
› Enables top-side cooling with DDPAK and QDPAK
› Ideal fit for solid state and hybrid relays and circuit breakers
600 V CoolMOS™ P7 › Fast-switching speed for improved eiciency
› Low gate charge for enhanced light-load eiciency and low power
consumption at no-load condition
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode for HB LLC application
DCM PFC, HB LLC 600 V CoolMOS™ PFD7 › Robustness and reliability with integrated robust, fast body diode and up
to 2 kV ESD protection in gate
› Reduced gate charge for enhanced light-load eiciency, and lower
hysteresis loss
Control ICs IDP2308 PFC-LLC non-AUX digital IC for
TV embedded PSU
› Low BOM count/system cost due to high integration
› Low standby power
› High system reliability
› Shorter development cycles and higher design and production flexibility
IDP2303A PFC-LLC non-AUX digital IC for
TV adapter
› Low BOM count/system cost due to high integration
› Low standby power
› Small form factor designs
› High system reliability
Synchronous rectification Low voltage
MOSFETs
Synchronous
rectification
OptiMOS™ 5 100-150 V › Low conduction losses, reduced overshoot
› FullPAK package available
PFC Boost diodes DCM PFC 650V Rapid diode › Low conduction losses
Control ICs CCM PFC ICs ICE3PCS0xG › High PFC and low THD
Main stage Control ICs HB LLC ICs ICE1HS01G-1/ICE2HS01G › High eiciency and low EMI
Auxiliary power supply Control ICs QR/FF flyback
CoolSET™
700V/800V – ICE5QRxx70/80A(Z)(G) › Low standby power, high eiciency, and robustness
Flyback Control ICs Digital ZVS flyback IDP2105 * › Forced resonant ZVS control reduces the switching loss
› Multilevel protection enables the robust design
› Flexible firmware provides more dierentiation for OEMs
High voltage
MOSFETs
Flyback 700 V CoolMOS™ P7 › Optimized for flyback topologies
› Best price competitive CoolMOS™ SJ MOSFET family
› Lower switching losses versus standard MOSFET
› Controlled dV/dt and di/dt for better EMI
www.infineon.com/smps
TV power supply
*For more information on the product, contact our product support
23
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OLED LLC
controller IC
OLED LLC
stage
Main LLC
stage
Rectifier
+ PFC
stage
VBUS
VCC
Supply for standby mode
Supply for OLED display
On/o control
Supply for system
Supply for system
Power on control
Status information
Vin
PFC not active in
standby mode
startup
Main LLC/PFC
combo-controller IC
OLED
module and
TV system
AC
OLED TV power block diagram
Benefiting from several advantages of organic light emitting diodes (OLED), various TV manufacturers are developing
OLED TVs to level up the user experience of their consumers. Comparing with LCD/LED TV panels, the OLED can be
thinner, lighter, and more flexible, also the power consumption is lower. With the excellent performance of Infineon’s
GaN e-mode HEMTs (for full portfolio see pages 156-160), the OLED TV becomes even thinner and more reliable.
www.infineon.com/smps
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
24
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Mobile charger
Modern mobile devices require a charger that provides faster charging but comes in a small size. High power density
and cost-eective power supplies can be designed by operating the converter at a higher switching frequency to
avoid a considerable increase in the transformer and the output capacitor size. In achieving the required thermal
performance and EMI behavior, power devices with lower losses and controlled switching behavior enable eective
and fast product development.
Infineon’s state-of-the-art digital-based controller, XDPS2107, enables the forced frequency resonant flyback (zero
voltage switching) operation, ideal to be implemented in high power density adapters and well-supporting USB-PD
requirements.
To address these requirements, Infineon oers its CoolMOS™ P7 SJ MOSFET family for adapters and chargers. Special
care has been taken to ensure very good thermal behavior, increased eiciency, and fulfillment of all EMI requirements,
enabling our customers to easily design products based on this new family. In addition, power devices in IPAK/SMD
packages enable optimal PCB layout through minimal footprint. SMD packages oer additional benefits for automatized
large volume production. Specifically, high power density at low manufacturing cost can be delivered using Infineon’s
SOT-223 cost-eective package, which enables SMT manufacturing to maintain very good thermal performances.
The digital so-switching controller, CoolMOS™ high-voltage MOSFETs, OptiMOS™ low-voltage MOSFETs and
synchronous rectification IC portfolios, enable high power density designs whilst meeting the thermal requirements.
Functional block Product category Topology Product family Benefits
Flyback converter High voltage MOSFETs Flyback 700 V CoolMOS™ P7 (standard grade) › Best price competitive CoolMOS™ SJ MOSFET family
› Lower switching losses versus standard MOSFET
ACF, FMCI 600 V CoolMOS™ PFD7 (standard grade) › Robustness and reliability with integrated robust
fast body diode and up to 2 kV ESD protection
› Reduced gate charge for enhanced light-load
eiciency
› Lower hysteresis loss
Control IC FFR flyback IC XDPS21071 › High power density and ideal for USB-PD
Synchronous rectification Low voltage MOSFETs Synchronous
rectification
OptiMOS™ PD 25 V – 150 V › Low conduction losses and reduced overshoot
› Logic level switching
› S308/PQFN 3.3 x 3.3 package available
Control IC Synchronous
rectification
IR1161LTRPBF › High eiciency
› Simple external circuitry
Load switch Low voltage MOSFETs Load switch OptiMOS™ PD 25 V/30 V › Low conduction losses
› S308/PQFN 3.3 x 3.3 package available
Charger SMPS
Best solutions for mobile charger
www.infineon.com/smps
Type-C connector
DC
Main stage
AC
Vin Vout
SwitchRectification
SR and protocol control
Primary-side PWM control
SMPS - mobile charger
25
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Wireless charging solutions
Cost-eective and secure oerings for consumer, industrial and
automotive applications
Over the last years, wireless charging has gained more and more traction in the market and is expected to heavily
influence our daily lives in future. Infineon oers a broad portfolio of eicient, high-quality products and solutions to
serve the key requirements of the dominant market standards: inductive (Qi (WPC)) and resonant (AirFuel). Whether
you charge a smartphone (e.g. at home or in the car), a handful of wearables, a power tool, a laptop or a service robot,
Infineon’s components and solutions help you overcome a wide range of common wireless power transfer challenges
for consumer, industrial, and automotive wireless charging designs.
Wireless charging standards
www.infineon.com/wirelesscharging
Many end markets for wireless charging or wireless power transfer
Infineon’s key enabling products for consumer, industrial, and automotive solutions
› Low and medium voltage power MOSFETs – OptiMOS™ and StrongIRFET™
› Gate driver ICs – EiceDRIVER™ or DC-DC low voltage gate driver
› 32-bit microcontrollers – XMC™ and AURIX™
› Wireless power controller (including soware IP) – XMC™-SC and AURIX™
› P-channel and N-channel small signal power MOSFETs
› High-voltage power MOSFETs – CoolMOS™ Superjunction MOSFETs
› PWM/flyback controllers and integrated power stage ICs – CoolSET™
› Gallium nitride (GaN) – CoolGaN™ e-mode HEMTs
› Dedicated automotive power products – MOSFETs, DC-DC, LDO, PMIC with ASIL qualification
› Voltage and buck regulators for component and bridge supply
› Authentication – OPTIGA™ Trust Qi *
› Reverse conducting IGBTs – 650V TRENCHSTOP™ 5
Inductive multi-coil
Number of devices charged Charges only one device Charges one device but with
better user experience Charges multiple devices
Positioning of receiver application
Exact positioning Positioning more flexible
(X and Y direction)
Free positioning
(up to >30 mm vertical freedom)
Rx-Tx communication In-band communication Bluetooth low energy or
in-band communication
Magnetic resonance
Inductive single-coil
Standard Qi inductive
110-205 kHz
Resonant AirFuel
6.78 MHz
Wireless charging
* Available when WPC Qi specification is released
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
26
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Components for inductive designs for consumer and industrial applications
Especially for the emerging higher power (15 W+) transmitter applications equipping your half- or full-bridge topologies with
components
from the OptiMOS™ product family, driver ICs, and voltage regulators pays o with superior power transfer
performance. Single and dual N-channel OptiMOS™ versions with excellent RDS(on) and charge characteristics are available in
small footprint packages for your wireless power transmitter design. For multicoil designs, there are very suitable
IR MOSFET™ devices in 2 x 2 mm packages ready to use. In addition, Infineon’s XMC™ 32-bit industrial microcontrollers
provide the flexibility to charge “just about anything”. Infineon’s portfolio supports individual needs by either an Arm®
Cortex®-M0 core (XMC1000 family) or a Cortex®-M4 core with a floating point unit (XMC4000 family). In addition, wireless
power controllers – XMC™-SC, including soware IP, are available for selected applications in our portfolio (for further details
check page 327). Ensuring that you, your data, and your devices remain secured and safe during charging, Infineon adds
a new member to its OPTIGA™ Trust family – the OPTIGA™ Trust UWP. Infineon readily supports the WPC Qi authentication
standard with an integrated turnkey solution.
Find here additional MOSFET and driver IC oerings!
www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver
www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder
Inductive (Qi) and low frequency transmitter solutions
www.infineon.com/wirelesscharging
1) www.infineon.com/smallsignalmosfets
* Available when WPC Qi specification is released
* * For more information on the product, contact our product support
Products Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
Recommendation
MOSFETs 20 V PQFN 2 x 2 IRLHS6242 11.7 (= 2.5 V drive capable) Right fit
25 V IRFHS8242 21 Right fit
30 V SuperSO8 BSC0996NS 11.8 Right fit
BSC0993ND 7 Best performance
PQFN 3.3 x 3.3 BSZ0589NS 4.4 Best performance
BSZ0994NS 8.6 Right fit
BSZ0909NS 15 Right fit
PQFN 3.3 x 3.3 dual BSZ0909ND 25 Best performance
BSZ0910ND 13 Best performance
PQFN 2 x 2 IRFHS8342 25 Right fit
IRLHS6342 15.5 (= 2.5 V drive capable) Best performance
40 V PQFN 3.3 x 3.3 BSZ097N04LS 14.2 Right fit
SuperSO8 BSC035N04LSG 5.3 Right fit
Reverse conducting IGBTs 650 V TO-247-3 IHW30N65R5 (30 A)
IHW40N65R5 (40 A)
IHW50N65R5 (50 A)
Gate driver ICs EiceDRIVER™ 1EDN7512B, 2EDN7524G, IRS2007M, 2ED2182S06F
PX3519, IRS2301S, WCDSC006
Microcontroller or wireless power controller XMC™ MCU and wireless power controller XMC™-SC (including soware IP)
Voltage regulators IR3841M * *, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV
Small signal MOSFETs BSS209PWH6327, BSS138WH6433 * * – Please check online
1)
Authentication SLS32AIA020Ux – OPTIGA™ Trust Qi * (USON10 3 x 3 package)
System diagram: inductive wireless charging – 15 W Qi transmitter for smartphones
BSS223PW (Supply switch)
BSS138W (Small signal)
WCDSC006
(Driver)
BSZ097N04
(FET 2x)
L
/12 V
C
L
5 V
5 V
IFX20002MBV33
(LDO)
(LDO)
XMC6521SCQ040X
(WP MCU)
1EDN7512B
(Driver) BSZ097N04
(FET)
Wireless charging
27
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IFX78M05
(LDO)
Buck
BSZ0909ND
(Dual FET)
VIN
VOUT
Optional:
XMC8201SC-Q024X
Wireless
power controller
L
C
XMC8511SC-Q040X
Wireless
power controller
2EDN7524R
(Driver) IRL80HS120
(FET 2x)
PX3519
(Driver)
Wireless charging
Components for resonant (AirFuel) and high frequency solutions
www.infineon.com/wirelesscharging
Components for resonant designs for consumer and industrial
Infineon oers superior power MOSFET technologies especially in the 30-100 V classes for class D inverter designs and
in the 150-250 V voltage classes for class E inverters to address MHz switching implementations. We provide industry
leading products when it comes to fast switching and have the best figure of merit for gate charge times RDS(on) and for
Coss thus enabling our customer to achieve 6.78 MHz inverter designs using robust silicon MOSFET technology.
CoolGaN™ 600 V with low and highly linear COSS, as well as low QC, enables high eiciency at higher power levels,
especially in higher power class E designs. The CoolGaN™ portfolio qualifying for the use in wireless charging
applications will be extended by adding 100 V and 200 V products over the next years. Infineon oers the “coolest”
driver ICs in the industry, already available as low-side drivers for class E implementations and very soon as level
shied half-bridge driver for class D topologies. If your transmitter design uses a pre-regulator (buck or buck/boost)
to control the input voltage of your amplifier you can find OptiMOS™ solutions in the 20-300 V MOSFETs section. Here
again, the XMC™ industrial mircocontroller and the XMC™-SC wireless power controller, including soware IP, are a
great fit to charge “just about anything”.
Products Voltage class Package Part number RDS(on) max @ VGS = 4.5
[mQ]
QG typical
[nC]
Coss typical
[pF]
Topology
MOSFETs 30 V PQFN 2 x 2 dual IRLHS6376PBF * * * 48 2.8 32 Class D
PQFN 3.3 x 3.3
dual
BSZ0909ND 25 1.8 120 Class D
BSZ0910ND 13 5.6 230 Class D
SOT-23 IRLML0030PBF 33 2.75 84 Class D
40 V SOT-23 IRLML0040 62 2.8 49 Class D
60 V SOT-23 IRLML0060 98 2.6 37 Class D
80 V PQFN 2 x 2 IRL80HS120 32 3.5 68 Class D/E
100 V PQFN 2 x 2 IRL100HS121 42 2.7 62 Class D/E
150 V PQFN 3.3 x 3.3 BSZ900N15NS3 75 * * 4.1 * * 46 Class E
BSZ520N15NS3 42 * * 7.2 * * 80 Class E
200 V BSZ900N20NS3 78 * * 7.2 * * 52 Class E
BSZ22DN20NS3 200 * * 3.5 * * 24 Class E
BSZ12DN20NS3 111 * * 5.4 * * 39 Class E
250 V BSZ42DN25NS3 375 * * 3.6 * * 21 Class E
GaN e-mode HEMT CoolGaN™ 600 V e-mode GaN HEMT IGT60R190D1S (HSOF-8-3)
Gate driver ICs EiceDRIVER™ 2EDL71 *, 1EDN7512, 2EDN7524, 2ED2182S06F, 2ED24427N01F * * *, 1EDI60N12AF
GaN EiceDRIVER™ gate driver ICs 1EDS5663H, 1EDF5673F, 1EDF5673K
Microcontroller or wireless power controller XMC™ MCU and wireless power controller XMC™-SC * (including soware IP)
Voltage regulators IR3841M * * *, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV
Small signal MOSFETs Please check online
1)
Find here additional MOSFET and driver IC oerings!
www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver
www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder
System diagram: resonant wireless charging – 2.5 W transmitter and recevier – 6.78 MHz - proprietary solution
* On demand
* * VGS = 8 V
* * *For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
28
For more details on the product,
click on the part number.
Wireless in-car charging (automotive)
The next generation of in-cabin wireless charging systems have to meet strict automotive safety, security, environmental,
and regulatory requirements while still enabling industry-leading charging performance and eiciency. Infineon’s AURIX™
microcontroller, voltage regulators, power MOSFET technologies, and network ICs will easily support these
requirements
with a complete charging solution. With 15 W charging that meets existing standards, including fast-charging
smartphones,
the solution easily supports future changes with a soware update. Infineon’s new innovative foreign object detection
(FOD) system or our unique improved power drive architecture that provides unparalleled EMI performance are just two
benefits out of many to address the design challenges in the automotive wireless charging market. Discover our complete
oerings for in-cabin charging on a system level on Infineon’s wireless charging webpage
– something you will not find
just anywhere.
www.infineon.com/wirelesscharging
System diagram: AURIX™-based wireless charger – three-coil
Automotive products for wireless charging Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
QG typical
[nC]
Inverter automotive grade MOSFETs 40 V SuperSO8 5 x 6 dual IPG20N04S4-12A 15.5 9
S3O8 3.3 x 3.3 IPZ40N04S5L-4R8 6.7 11
IPZ40N04S5L-7R4 10.7 6.5
Automotive products for wireless charging Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
RDS(on) max @ VGS = 10 V
[mQ]
Coil selection switch 60 V TDSON-8 IPG20N06S4L-11A 15.8 11.2
100 V SuperSO8 5 x 6 dual IPG20N10S4L-22A 28 22
IPG20N10S4L-35A 45 35
IPG16N10S4L-61A 78 61
Microcontroller and wireless power controller AURIX™ SAK-TC212S-4F100N *, SAK-TC212S-8F133SC
Power supply TLD5190 – buck-boost controller/TLE8366, TLS4120x, TLS203x/TLF35584 – safety MCU supply + CAN supply
CAN TLE7250SJ – high performance CAN transceiver
Gate driver ICs AUIRS2301S
TLD5190QV
(Buck/Boost)
TLE8366
Pre-regulator
TLS203B0
(LDO)
TLE7250VSJ
(CAN)
AUIRS2301S
(Driver)
IPG20N04S4L-11A
(Dual FET)
AUIRS2301S
(Driver)
IPG20N04S4L-11A
(Dual FET)
IPG16N10S4L-61A
(2x Dual FET)
VBA
T
5-40V
5 V gate DRV
3.3 V
NFC radio
CAN interface
Coil 1 Coil 2 Coil 3
IPG20N10S4L-22 (100 V)
(coil switches)
AURIX ™
SAK-TC212S-8F133SC
Wireless
power
controller
Wireless charging
*For more information on the product, contact our product support
29
For more details on the product,
click on the part number.
www.infineon.com/wirelesscharging
Wireless charging
System solutions for wireless charging
Master your design challenges with Infineon. With our broad range of designs, customers have the possibility to make
wireless charging available for dierent kinds of applications. For more information on the availability of our boards,
please visit www.infineon.com/wirelesscharging or get in contact with us via www.infineon.com/support.
Reference design
Valkyrie – the 15W Qi transmitter (Tx) for charging smartphones
REF_10WTx_QI_4102 *
Board specification
Find the right solutions for your wireless charging designs in four steps
Infineon’s selection tool for wireless charging allows you to find the right solutions for your designs
in just four steps: select the application, power range, standard, and the topology you want to apply
and get an overview of Infineon’s most recommended oerings.
Spark Connected Inc. is our oicial partner for wireless charging.
The soware IP is provided by our partner.
For details visit: www.sparkconnected.com
Try now!
15 W inductive
Consumer/industrialAutomotive
1-15 W inductive 2.5 W resonant60-200 W inductive 16/20 W resonant >20 W resonant
Resonant solutionsInductive solutions
Dedicated
for automotive
in-cabin wireless
charging
Board number REF_10WTx_QI-4102
Solution max. power capability [W] 7.5 W / 10 W
Frequency fixed 127.8 kHz (Apple iOS), variable (Android)
Input power supply USB QC 3.0 (9 V / 12 V)
Topology boost topology (half-bridge solution)
Power regulation method Variable voltage boost (added frequency control for Android)
Rx-Tx communication In-band communication (bi-directional)
Supports WPC 1.2.4 EPP
Charging rates Rx Up to 15 W
FOD measurements calculated Tx power Direct AC measurement at coil
DC-DC eiciency 83%
Dimensions L: 85 mm, W: 50 mm, H: 6.4 mm / Active area: L: 45 mm, W: 40 mm
Coil type MP-A11
*On demand
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
30
For more details on the product,
click on the part number.
Wearables and healthtech
Wearables and healthtech
Next level of wearable devices with Infineon‘s sensing, RF,
power, and security solutions
Smart wearable devices have become an essential part of our lives and are expected to gain more popularity in the
future. Wearables are devices that can be comfortably worn on the body and that are used for multiple purposes
depending on the application. With Infineon‘s product oerings, customers can solve design challenges such as
data security, sensor accuracy, longer battery lifetime, small form factor of the components, device protection, and
dierentiation between everyday movements and a fall.
www.infineon.com/wearables
Key enabling products:
› XENSIV™ barometric pressure sensors
› OPTIGA™ Trust B
› Broad RF switch portfolio
› GPS LNA
› 4G/5G LTE LNAs
› eSim
› XENSIV™ MEMS microphone
› Wireless charging solutions
› 3D Image Sensor REAL3™
› 32Mb NVM ultralow power flash memory
› ESD protection
› SECORA™ Connect
› XENSIV™ 60 GHz radar
Achieve robust and accurate
altitude measurement,
location tracking, precise
single step or body motion
detection
Highest
accuracy
Easy implementation of smart
payment, ticketing or access
control with Infineon’s NFC
solution
Fast and
secure
transactions
Decrease your time to market.
Thanks to our broad product
portfolio and solution oerings
such as wireless charging, eSim,
ESD protection or authentication
Easy to
integrate
solutions
Infineon’s products with smallest
form factors and low energy
consumptions provide high
functional integration and
long-lasting battery
Increased
battery
lifetime
Smartwatch
and sport watch
Wristband
AR/VR glasses Smart clothing Healthtech
Hearables
Wearable applications addressed by Infineon
31
For more details on the product,
click on the part number.
www.infineon.com/wearables
* Available on request
Solution tree for smartwatch, sport watch, and wristband
Functional blocks of smartwatch, sports watch, and wristband
Functional block Product family Functional block Recommended parts and families
Security › OPTIGA™ Trust B SLE 95250
› SECORA™ Connect *
› eSim: NC1025 *
Interface › Broad ESD protection product portfolio
› XENSIV™ MEMS microphone
Wireless charging › 2 W inductive *
› 2.5 W resonant *
Memory › 32Mb NVM flash memory
Sensing › XENSIV™ pressure sensor
DPS310/DPS368
Connectivity › Broad 4G/5G LNA product portfolio
› GNSS LNA: BGA123L4, BGA123N6, BGA524N6, BGA125N6
› Broad RF switches portfolio
Microcontroller
BT/WiFi Cellular
Microcontroller
Microphone
Haptic feedback Speaker
Screen
Vital sensing Environmental
sensing
Sports/
activity sensing
Touch interface
Interface
Sensing
Charging Internal power stage Output power stage
Connectivity Memory
Security
ESD protection
Wireless charging
USB charging
Battery
management
Internal power
management
RAM
eSIM Secure element
+ NFC
Authentication
Flash
GNSS
(GPS, GLONASS,
BEIDOU, GALILEO
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
32
For more details on the product,
click on the part number.
› DC-DC enterprise solutions for data processing applications
› SMPS – laptop adapters
› SMPS – PC power supply
› SMPS – server power supply
› SMPS – telecom power supply
SMPS and digital power management
solutions for data processing applications
33
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
34
For more details on the product,
click on the part number.
DC-DC
DC-DC enterprise power solution
for data processing applications
Multiphase and point-of-load DC-DC solution
As an industry leader in digital power management, Infineon delivers solutions for the next-generation server,
communi
cation, storage and client computing applications. Infineon oers a complete portfolio including digital PWM
controllers,
integrated power stages, integrated point-of-load (POL) voltage regulators, MOSFET drivers, power blocks
and discrete MOSFETs. These proven technologies oer full flexibility to our customers to optimize a complete system
solution for space, performance, ease of design and cost to meet critical design goals. In addition, our latest soware
tools help simplify design, shorten design cycles and improve time-to-market.
CPU, GPU, DDR
AC adapters
Battery
charger
Chipset, I/O,
other peripheral lo
ads
OptiMOS™
OptiMOS™
OptiMOS™
DC-DC
PWM
controller
www.infineon.com/dataprocessing
Features and benefits
Key features
Best-in-class eiciency
Multi-protocol support
Complete system solution
Digital controller flexibility
Ease of design
Smallest solution size
Key benefits
Digital controller and power stage provide industry‘s highest eiciency of more
than 95 percent
Intel SVID, AMD SVI2, NVIDIA PWM VID, parallel VID (up to 8 bits) , PMBus™
Rev1.3, AVS Bus (PMBus™ Rev1.3)
A broad portfolio of fully integrated point-of-load, integrated power stage and
digital controller solutions in addition to discrete drivers and MOSFETs oers full
flexibility to optimize complete system solutions ranging from 1 A to 1000+ A.
Industry‘s benchmark for feature richness and low quiescent power with up
to 16-phases
Intuitive GUI enables faster optimization, thereby reduces design cycle time
Best-in-class OptiMOS™ MOSFETs combined with advanced packaging
technologies enable high power density at high eiciency, and the superior
control engine with digital controllers helps minimize output capacitance
significantly
35
For more details on the product,
click on the part number.
Multiphase DC-DC system solution
Server/storage
Server-Intel/IBM/AMD/ARM
Workstation
Storage
High-end consumer
High-end desktop
Notebook
Gaming
Graphic
Industrial PC
Comms
Datacom
Comms core
SOHO SAN
Edge access
Telecom
Base station
(macro + distributed)
Powered ICs
Server chipset
Voltage
VCCIO
VMCP
Vcore
Vmem
ASIC
ASSP
FPGA
FPGAs (~0.5–3.3 V) Networking SoCs
and ASICs, FPGAs
Multi-core processors
Ethernet switch ICs
PC chipset
Vcore
Graphics
ASICs (~1.0 V)
ASSPs (~1.0 V)
10-30 A
single-phase (multi-rail)
>30 A
multiphase/rail
www.infineon.com/dataprocessing
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
36
For more details on the product,
click on the part number.
DC-DC enterprise power solution for
data processing applications
Integrated point-of-load (IPOL) converters
Infineon’s IPOL converters integrate a PWM controller, a driver and MOSFETs into a small PQFN package for
ease of use. The patented PWM modulation scheme allows greater than 1 MHz switching frequencies to deliver
ultracompact layouts and and the smallest bill of materials (BOM). A PMBus™ interface is available for monitoring and
control in systems that use advanced CPUs, ASICs and FPGAs.
DC-DC IPOL portfolio
Digital interface IPOL
*Coming soon
Analog IPOL
Block diagram
POL
IR38XXX
POL
IR38XXX
POL
IR38XXX
I/O I/O
Core
Memory
+
+
+
+
0.9 V
1.5 V
1.8 V
12 V
PMBus™
CPU/ASIC/FPGA/DSP
Key features
› Input voltage range
4.5-21 V
› Output current 1-35 A
› Operating temperature
range of -40 to 125°C
Key benefits
› Integrated controller,
driver, MOSFETs for small
footprint
› High-eiciency MOSFETs
and thermally enhanced
packages for operation
without heat sinks
www.infineon.com/dataprocessing
IC PMBus™, telemetry, margin, faults, SVID PVID
Digital control/configuration, telemetry and diagnostic
Part number Max.
current
[A]
Package
size [mm]
Max. Vin Max. fsw Distinctive
features
IR38064MTRPBF 35 5 x 7 21 V 1500 KHz PMBus™
IR38063M 25 5 x 7 21 V 1500 KHz
IR38062M 15 5 x 7 21 V 1500 KHz
IR38060M 6 5 x 6 16 V 1500 KHz
IR38163M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38165M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38363M 15 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38365M 15 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38263M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
PVID + PMBus™
IR38265M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, PVID
IR38164M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™,
enhanced Imon
IRPS5401M 4+4+2
+2+0.5
7 x 7 14 V 1500 KHz 5 output PMIC,
PMBus™
„Performace“ voltage-mode PWM
Ultralow jitter and noise, high accuracy and low ripple
Part number Max.
current [A]
Package
size [mm]
Max. Vin Max. fsw Distinctive
features
IR3883MTRPBF 3 3 x 3 14 V 800 KHz Constant-on-time
IR3888MTRPBF 25 5 x 6 17 V 2000 KHz
IR3887MTRPBF * 30 4 x 5 17 V 2000 KHz
IR3889MTRPBF 30 5 x 6 17 V 2000 KHz
DC-DC
37
SMPS - laptop adapters
For more details on the product,
click on the part number.
www.infineon.com/smps
Manufacturing slimmer and lighter adapters requires ICs that enable high eiciency with good electromagnetic
interference (EMI) performance and low standby power. There is also a need for cost-eective MOSFETs in small
packages that feature good EMI and excellent thermal performance. Infineon oers a wide range of products
specifically designed for adapters including high-voltage MOSFETs and control ICs for PFC and PWM stages, as well
as low-voltage MOSFETs for synchronous rectification. With these products, Infineon supports the trend towards a
significantly higher eiciency level, especially in partial load conditions, as well as the miniaturization of the adapter.
Extremely versatile are the CoolMOS™ P7 SJ MOSFET series and the latest body-diode performance-enhanced
CoolMOS™ PFD7 series which combine high eiciency and optimized cost with the ease of use. Infineon developed
a family of packages, characterized by having a short lead, IPAK short lead with ISO-stando and wide creepage that
enable our customers’ low-cost and reliable manufacturing, specifically for adapters. High power density at low
manufacturing cost can be achieved by using Infineon’s SOT-223 cost-eective package and ThinPAK 5x6 and 8x8
high-density SMD packages which enable SMT manufacturing while maintaining very good thermal performances.
For synchronous rectification, Infineon’s OptiMOS™ PD logic-level power MOSFET series oer extremely low on-state
resistance and low capacitances.
The new control ICs such as the digital-based XDP™ controller enable forced-frequency-resonant zero-voltage-
switching (FFR ZVS) operation, ideal in high-power-density adapter designs and supporting USB-PD requirements.
Multiple and oen clunky chargers and adapters for phones, tablets, and
laptops pose a nuisance for many users due to the additional weight and
added space. That created a need and a trend towards higher power density
and consequently smaller devices. Today, flyback power conversion topology
is typically used in such systems and the form factor is limited by the
eiciency achievable at 90 VAC input voltage and full load.
The highest-power-density systems available today reach ~12 W/in3 (for
65 W maximum output power). Infineon’s CoolGaN™ e-mode HEMTs enable a
breakthrough with respect to power density for adapter and charger systems
enabling ~20 W/in3 power density systems (for 65 W maximum output power).
This advantage can be realized by implementing Infineon’s CoolGaN™
in a half-bridge topology that allows simultaneous increase of switching
frequency and eiciency.
SMPS
Right-fit portfolio for competitive design of laptop adapters
Type-C connector
DC
Main stage
AC
Vin Vout
SwitchRectification
SR and protocol control
Primary-side PWM control
Infineon’s 20 W/in
3
adapter (cased) -
24 W/in
3
(uncased) with 65 W output
power capability (LxWxH: 74.2 mm x
36.5 mm x 16.5 mm)
Laptop adapter
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
38
For more details on the product,
click on the part number.
Functional block Product category Topology Product family Benefits
Flyback converter High voltage MOSFETs
and HEMTs
Flyback
600 V/700 V/800 V CoolMOS™ P7
SJ MOSFETs
› Fast switching speed for improved eiciency and thermals
› Reduced gate charge for enhanced light load eiciency
› Optimized gate-to-source voltage (VGS) threshold for lower turn-o losses
ACF, FMCI 600 V CoolMOS™ PFD7 SJ
MOSFETs
› Robustness and reliability with integrated robust fast body diode
and up to 2 kV ESD protection
› Reduced gate charge for enhanced light load eiciency
› Lower hysteresis loss
Flyback (ACF, FFR, etc.)
CoolGaN™ 600 V e-mode HEMTs
› Highest eiciency
› Highest power density
Low voltage MOSFETs Flyback/auxiliary
synchronous rectification
OptiMOS™ 100-150V › Low conduction losses and reduced overshoot
› Logic level can support low voltage gate drive to achieve
high eiciency
Control ICs QR flyback IC ICE2QS03G, ICE5QSAG › High eiciency and low standby power
FFR flyback IC XDPS21071 › High power density and digital control
› Suitable for USB-PD design
PFC High voltage MOSFETs,
HEMTs, and diodes
DCM PFC 600 V CoolMOS™ P7
SJ MOSFETs
› Fast switching speed for improved eiciency
› Reduced gate charge for enhanced light load eiciency
› Optimized gate-to-source voltage (VGS) threshold for lower turn-o losses
DCM/CCM PFC
CoolGaN™ 600 V e-mode HEMTs
› Highest eiciency contribution via less parasitic parameter
› Space saving with SMD smaller package
Boost diode DCM/PFC 650 V Rapid 1 diodes › Low conduction losses
Control ICs DCM PFC ICs TDA4863G,
IRS2505LTRPBF
› Simple external circuitry
› High PFC and low THD
Main stage High voltage MOSFETs
and HEMTs
HB LLC 600 V CoolMOS™ P7
SJ MOSFETs
› Fast switching speed for improved eiciency and thermals
› Reduced gate charge for enhanced light load eiciency
› Optimized gate-to-source voltage (VGS) threshold for lower turn-o losses
CoolGaN™ 600 V e-mode HEMTs
› Highest eiciency
› Highest power density
Synchronous
rectification
Low voltage MOSFETs Synchronous rectification OptiMOS™ PD 100-150V › Low conduction losses, reduced overshoot
› Adapter-oriented synchronous rectification MOSFETs
Control ICs Synchronous rectification IR1161LTRPBF › High eiciency
› Simple external circuitry
www.infineon.com/smps
Recommended products
39
SMPS - PC power supply
For more details on the product,
click on the part number.
PC power supply
The PC power market is divided into high-end gaming PC and better cost-performance sectors to achieve a better
price/performance for desktop SMPS. The PC OEMs are implementing the desktop SMPS by removing the AUX power
block to save the cost of having a flyback circuit.
Due to new structure of the CPU and GPU, more and more higher peak power is needed ( 1.5 to 2 times higher than
normal power). In addition to the needed CCM PFC, Infineon 600 V CoolMOS™ P7 and 40 V / 60 V OptiMOS™ oer the best
price/performance and reliability to meet the design requirements, as well as to achieve the highest eiciency enabled
by semiconductors available in the market.
For those CPU and GPU power hungry gaming PCs, the ICE3PCS0xG CCM PFC IC provides high eiciency over the whole
load range and low count of external components, in addition, the ICE3PCS0xG CCM PFC IC oers fast output dynamic
response during load jump. In additions to PGFC IC, Infineon’s LLC ICs ICE1HS01G/ICE2HS01G support customers to
minimize the external component count.
SMPS
More eicient PC power supply
DC
AC
Vin Vout
PFC-PWM with AUX and ICs
Rectification
PFC Main stage
Vbus
www.infineon.com/smps
Functional block Product category Topology Technology Benefits
PFC/main stage High voltage MOSFETs CrCM/DCM PFC 600V CoolMOS™ P7 › Best thermal performance
› Rugged body diode
› ESD enhancement for production line
› Wide RDS(on) portfolio including both THD and SMD packages
600V CoolMOS™ P6 › Fast switching speed for improved eiciency and thermals
› Low gate charge for enhanced light-load eiciency and low
power consumption at no load condition
› Optimized VGS threshold for low turn-o losses
500V CoolMOS™ CE › Optimized cost/performance
› Lower transition losses versus standard MOSFET
Boost diodes DCM PFC 650V Rapid 1 › Low conduction losses
CCM PFC 650V Rapid 2 › Low reverse-recovery losses and PFC switch turn-on losses
Control ICs CCM PFC ICs ICE3PCS0xG › High PFC and low THD
Main stage Control ICs HB LLC ICs 650V – ICE1HS01G-1/
ICE2HS01G
› High eiciency and low EMI
Synchronous
rectification
Medium voltage diodes HB LLC + center-tap OptiMOS™ 40V › Optimized cost/performance and low thermals
OptiMOS™ 60V › Layout tolerance and low thermals
Recommended products
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
40
SMPS - server power supply
For more details on the product,
click on the part number.
Server power supply
The trend in the field of data center and enterprise servers is to deliver more power per rack. Meanwhile,
the rising cost of energy and environmental concerns make SMPS-eiciency optimization a key requirement
across the entire load range for server and data center designs. This challenging task is combined with the
requirement for higher power and higher power, higher power density and cost-eectiveness.
In the PFC stage and generally in hard-switching topologies used in server applications, Infineon recommends its
600 V CoolMOS™ C7 and G7 families oering the lowest FOM RDS(on) *QG and RDS(on) *Eoss. These MOSFET series provide
the lowest switching losses, which is necessary in fast-switching-frequency operations in high-end server SMPS. With
Infineon’s C7 and G7 series, the eiciency is optimized already from a very light-load operation. 600 V CoolMOS™ C7
and G7 products are used with Infineon’s industry-benchmark non-isolated 2EDN752x gate driver IC family. Available in
compact SMD packages such as ThinPAK, DDPAK and TOLL, these SJ MOSFETs oer benefits in space usage and power
density.
Complementary to the 600 V CoolMOS™ C7 in high eiciency PFC is the CoolSiC™ Schottky diodes. The 600 V CoolMOS™ P7
family oers a good compromise between price and performance. This is valuable in both PFC and HV DC-DC stages
where low QG and turn-o losses are important benefits, especially in case of high-switching-frequency operation and
high light-load eiciency requirements.
As high power (2-6 kW and above) require ultrahigh eiciency (96-98 percent peak) and high power density, Infineon’s
CoolGaN™ 600 V e-mode HEMTs family with totem-pole PFC controls deliver the highest eiciency and power density
in the world. Using the 600 V CoolMOS™ S7 devices with active bridge circuit fulfills the Titanium® requirement at
the lowest cost. Operating expenses (OPEX) and capital expenditures (CAPEX) are both reduced through simplified
topologies and the power density in the server PSU is doubled.
In applications with low output voltage and high output current, further eiciency improvements are enabled by the
continuous reduction of on-resistance. This can be achieved by using Infineon’s low-voltage OptiMOS™ MOSFET series
in the synchronous rectification stage. Infineon’s low-voltage products are complemented by StrongIRFET™ devices that
are optimized for lower switching frequencies and highest system robustness.
SMPS
Highly eicient server power supply
DC
Auxiliary power
Control and housekeeping
AC
Vin Vout
DC
Vaux
PFC-PWM with AUX and ICs
Rectification
PFC Main stage
Vbus
www.infineon.com/smps
41
For more details on the product,
click on the part number.
www.infineon.com/smps
Functional block Product category Topology Product family Benefits
PFC High voltage MOSFETs CCM/interleaved PFC; TTF 600 V/650 V CoolMOS™ C7
650 V CoolMOS™ G7
600 V CoolMOS™ S7
› Best FOM RDS(on) *QG and RDS(on) *Eoss
› Lowest RDS(on) per package
› Low dependency of switching losses form Rg,ext
High voltage GaN Totem-pole PFC CoolGaN™ 600 V › Enable the highest eiciency and highest power density
SiC diodes CCM/interleaved PFC CoolSiC™ Schottky diode
650 V G5
› Low FOM VF *QG
Control ICs CCM PFC ICs ICE3PCS0xG › Ease of use
Main stage High voltage MOSFETs ITTF 600 V CoolMOS™ C7/P6 › Fast switching speed for improved eiciency and thermals
› Low gate charge for enhanced light load eiciency and low
power consumption at no load condition
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode which prevents device failure during hard
commutation
LLC, half-bridge below
1 kW
600 V CoolMOS™ P7, CFD7 › Low turn-o losses
› Low Qoss
› Low QG
LLC, phase shi full-bridge
below 1 kW
600 V CoolMOS™ CFD7,
650 V CoolMOS™ CFD2
› Fast and rugged body diode
› Optimized low QG and so commutation behavior to reach
highest eciency
› Highest reliability for 650 V VDS
ZVS PS FB, LLC, TTF TRENCHSTOP™ IGBT 650 V F5 › Improved ruggedness and high eiciency in low inductance
designs
Control ICs HB LLC ICs ICE1HS01G-1
ICE2HS01G
› High eiciency and low EMI
Sychronous rectification
Low voltage MOSFETs
HB LLC and center tap OptiMOS™ 40 V › High eiciency over whole load range, layout tolerance
ITTF OptiMOS™ 60 V › High eiciency, low thermals, low VDS overshoot
ZVS PS FB and center tap OptiMOS™ 80 V › High eiciency over whole load range, low VDS overshoot and
oscillations
Auxiliary power supply Control ICs QR/FF flyback CoolSET™ 800 V – ICE2QRxx80(Z)(G)
ICE3xRxx80J(Z)(G)
700 V ICE5QRxx70A(Z)(G)
800 V ICE5QRxx80A(Z)(G)
› Low standby power, high eiciency and robustness
› An integrated 700 V/800 V superjunction power MOSFET with
avalanche capability
› Burst mode entry/exit to optimize standby power at dierent
low load conditions
Housekeeping Microcontrollers - XMC1xxx › Flexibility, HR PWM, digital communication
› Arm®-based standard MCU family and wide family
Conversion Microcontrollers - XMC4xxx › Flexibility, HR PWM and digital communication
PFC, PWM/resonant
converter, synchronous
rectification
Gate driver ICs - EiceDRIVER™ 1EDix › 100 ns typical propagation delay time
› Functional isolation
› Separate source
- EiceDRIVER™ 2EDNx › 8 V UVLO option
› -10 V input robustness
› Output robust against reverse current
Recommended products
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
42
SMPS - telecom power supply
For more details on the product,
click on the part number.
www.infineon.com/smps
* in development
The ever increasing data consumption, coupled with new levels of virtualization and complexity of the 5G telecom
infrastructure, is bringing its demanding requirements into the telecom power arena. The outstanding improvements
made in telecom SMPS performance in the past decade have been primarily brought by the dramatic reduction of the
on resistance achieved in high voltage MOSFETs, using the revolutionary superjunction principle. This principle was
introduced by Infineon at the end of the nineties with the CoolMOS™ series.
To achieve the current demanding, flat energy eiciency targets, it has been increasingly popular to employ
synchronous rectification utilizing the unique performance of medium-voltage OptiMOS™ power MOSFETs.
OptiMOS™power MOSFET family, which has gained terrific popularity in DC-DC brick solutions, coupled with gate-
driver ICs and microcontrollers eiciently powers the BBUs, RRUs and AAUs of the macro and the small cells.
Infineon’s wide bandgap technologies, such as CoolGaN™ 600 V (gallium-nitride-based) and CoolSiC™ 650 V (silicon-
carbide-based) for primary side and upcoming CoolGaN™ 100V/200V * for synchronous rectification, complement the
wide portfolio of silicon-based switches, enabling highest electrical conversion eiciency and robustness at attractive
system costs. Infineon’s EiceDRIVER™ gate driver IC family perfectly matches the CoolGaN™ and CoolSiC™ products.
SMPS
Full system solution for telecom power supply
Telecom power supply
niPOL, buck
Load
Load
Power
distribution Hot swap Primary side
PWM
Synchronous
rectification
Battery protection
DC
Isolated DC-DC Non-isolated POL
AUX
Analog and digital control ICs
AC
Vin
DC
Vout
DC
Vaux
AC-DC rectifier
Synchronous
rectification
PFC DC-DC
main stage
Vbulk
Or-ing
Analog and digital control ICs
43
For more details on the product,
click on the part number.
Telecom power supply
www.infineon.com/smps
Functional block Product category Topology Product family Benefits
PFC High voltage
MOSFETs
CCM/interleaved
Dual-boost PFC
600V/650V CoolMOS™ C7 › Best FOM RDS(on) *QG and RDS(on) *Eoss
› Lowest RDS(on) per package
› Low dependency of switching losses form Rg,ext
600V CoolMOS™ P7 › Low turn-o losses
› Low Qoss
› Low QG
TRENCHSTOP™ 5 IGBT 650 V H5
TRENCHSTOP™ 5 IGBT 650 V S5
› Best trade-o between switching and conduction losses
› Low gate charge QG
› High current density
High voltage GaN CCM totem pole CoolGaN™ 600 V › Switching at high frequencies (> Si)
› Enables high power density
SiC diodes CCM/interleaved PFC
Dual-boost PFC
CoolSiC™ Schottky diode
650 V G6
› Low FOM VF *QC
Control ICs CCM PFC ICs 800V – ICE3PCS0xG › High PFC and low THD
Gate driver ICs Totem-pole PFC EiceDRIVER™ 1EDF5673F
and 1EDF5673K
› Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Input-output propagation delay accuracy: ±5 ns
› Functional and reinforced isolation available
GaN
gate driver ICs
Totem-pole PFC Half-bridge: EiceDRIVER™
2ED2106S06F, 2EDL23N06PJ,
2ED2182S06F
› Integrated bootstrap diode
› Low level-shi loss
› Excellent ruggedness against negative transient voltages on VS pin
Interleaved PFC Low side: EiceDRIVER™
2ED4427N01F *, 1ED44176N01F,
1ED44175N01B
› OCP, fault and enable function in DSO-8/SOT23-6
› 2ED – 10 A, dual low side driver
DC-DC
main stage
High voltage
MOSFETs
TTF, ITTF 600V CoolMOS™ C7/P7 › Fast-switching speed for improved eiciency and thermals
› Low gate charge for enhanced light load eiciency
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode which prevents device failure during hard commutation
HB/FB LLC 600V CoolMOS™ P7 › Low turn-o losses
› Low Qoss
› Low QG
HB/FB LLC,
ZVS PSFB
600V CoolMOS™ CFD7 › Best-in-class Qrr and trr level
› Significantly reduced QG
› Improved eiciency over previous CoolMOS™ fast-body-diode series
Gate driver ICs HB LLC, ZVS
phase-shi
full-bridge
Half-bridge: EiceDRIVER™
2ED2106S06F, 2ED2182S06F,
2EDL23N06PJ
› Integrated bootstrap diode
› Low level-shi loss
› Excellent ruggedness against negative transient voltages on VS pin
High side: 1EDI60N12AF,
1ED3122MU12H *, 1ED020I12-F2
› Isolated gate driver, up to 10 A, 100 ns propagation delay
› Miller clamp and DESAT protection, UL certified
Control ICs HB LLC ICE1HS01G-1, ICE2HS01G › High eiciency and low EMI
GaN
gate driver ICs
LLC, ZVS phase-shi
full-bridge
EiceDRIVER™ 1EDS5663H › Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Input-output propagation delay accuracy: +/- 5 ns
› Functional and reinforced isolation available
GaN e-mode
HEMTs
LLC, ZVS phase-shi
full-bridge
CoolGaN™ 600 V › Enables the highest eiciency and highest power density
Synchronous
rectification
Low voltage
MOSFETs
Synchronous
rectification MOSFET
OptiMOS™ 80-200V › Industry’s lowest FOM (RDS(on) *QG) leading to high eiciency at good price/
performance
› Low voltage overshoots enabling easy design-in
› Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
Gate driver ICs Synchronous
rectification
Half-bridge: EiceDRIVER™
IRS2010S *, 2ED2182S06F,
2EDL23N06PJ
› Integrated bootstrap diode
› Low level-shi loss
› Excellent ruggedness against negative transient voltages on VS pin
Low side: EiceDRIVER™
2ED4427N01F, IRS4427S,
1ED44175N01B
› OCP, fault and enable function in SOT23-6
› 2ED – 10 A, dual low-side driver, DSO-8 with power pad
Auxiliary power
supply
Control ICs 5
th
generation QR/FF
flyback CoolSET™
QR 800 V - ICE5QRxx80Ax
FF 800 V - ICE5xRxx80AG
› Quasi-resonant-switching operation for high eiciency and low EMI signature
› Fixed-frequency-switching operation for ease of design – 100 KHz and 125 KHz
› Fast and robust start-up with cascode configuration
› Robust protection with adjustable line input overvoltage protection,
VCC and CS pin short-to-ground protection
› Optimized light-load eiciency with selectable burst mode entry/exit profile
› Frequency reduction for mid- and light-load condition to reduce switching losses and
increase eiciency
› Direct feedback and regulation with integrated error amplifier for non-isolated output
› High power delivery of up to 42 W with 800 V CoolSET™ in heatsink-free SMD package
Housekeeping Microcontrollers - XMC1xxx › Flexibility, HR PWM, digital communication
› Arm®-based standard MCU family and wide family
Conversion Microcontrollers - XMC4xxx › Flexibility, HR PWM, digital communication
› Arm®-based standard MCU family and wide family
Isolated DC-DC Microcontrollers - XDPP1100 › Optimized for 48 V telecom isolated conversion
› Highly flexible digital core
› State-of-the-art dedicated AFE
› State-machine based fast loop control
› Pre-programmed peripherals in ROM
› Negligible internal power consumption
› Industry smallest digital power controller
Recommended products
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
44
For more details on the product,
click on the part number.
Functional block Product category Topology Product family Benefits
PFC, PWM/
resonant
converter,
synchronous
rectification
Gate driver ICs Single-channel
non-isolated
EiceDRIVER™ 1EDN751x /
1EDN851x
› 4 V and 8 V UVLO option
› 8 A sink and 4 A source driver capability
› 19 nS propagation delay precision for fast MOSFET and GaN switching
› (-)10 V input robustness
Single-channel
non-isolated
EiceDRIVER™ 1EDN7550 /
1EDN8550
› 4 V and 8V UVLO option
› 8 A sink and 4 A source driver capability
› True dierential inputs for ground shi robustness ( CMR up to +/-150 V )
Dual-channel
non-isolated
EiceDRIVER™ 2EDN75xx /
2EDN85xx
› 4 V and 8 V UVLO option
› 5 A Source and Sink driver capability
› 17 nS propagation delay precision for fast Mosfet and GaN switching
› (-)10 V input robustness
Dual-channel
junction isolated
EiceDRIVER™ 2EDL811x /
2EDL801x
› 2 A/3 A/4 A source ( high and low side ) and 6 A sink ( low side ) and 5 A sink ( high side )
driver capability
› 2 control input version: independent and dierential ( shoot-through protection with
-8 V/ +15 V GND shi robustness )
› 120 V on-chip bootstrap diode
› Support operating frequency up to 1 MHz
Single-channel isolated EiceDRIVER™ 1EDi
Compact
› 100 ns typical propagation delay time
› Functional isolation 1.2 kV separate source and sync outputs
Dual-channel isolated EiceDRIVER™ 2EDFx › 35 ns typical propagation delay time
› Functional isolation 1.5 kVCMTI > 150 V/ns
Dual-channel isolated EiceDRIVER™ 2EDSx › 35 ns typical propagation delay time
› Reinforced (safe) isolation 6 kV CMTI > 150 V/ns
Or-ing Low voltage
MOSFETs
Or-ing MOSFET OptiMOS™ 60-200 V › Industry’s lowest FOM (RDS(on) *QG) leading to high eiciency at good price/performance
› Low-voltage overshoots enabling easy design-in
Battery
protection
Low voltage
MOSFETs
MOSFET OptiMOS™ 60-150V
Isolated DC-DC Low voltage
MOSFETs
Primary-side
PWM MOSFET
OptiMOS™ 60-200V › Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
StrongIRFET™ 60-200V
Small signal MOSFETs
60-200 V
Synchronous-
rectification MOSFET
OptiMOS™ 40-100V
StrongIRFET™ 40-100V
Or-ing MOSFET OptiMOS™ 25-30V
StrongIRFET™ 25-30V
Active snubber OptiMOS™ Power MOSFET
60 V/100 V/150 V
www.infineon.com/smps
Recommended products
45
For more details on the product,
click on the part number.
Wide bandgap semiconductors
A new era in power electronics
From operating expense and capital expenditure reduction, through higher power
density enabling smaller and lighter designs, to overall system cost reduction, the
benefits are compelling.
Interested? Learn more at:
www.infineon.com/wbg
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
46
For more details on the product,
click on the part number.
› Smart building
› Power over Ethernet (PoE)
› LED lighting
› Power and gardening tools
› Battery formation
› Energy storage systems
› Solar
› UPS
› SMPS - embedded power supply
› SMPS - industrial SMPS
Advanced system solutions
for industrial applications
47
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
48
For more details on the product,
click on the part number.
Smart building
Make connected buildings smart with
Infineon’s full-spectrum portfolio
With the rise of IoT and big data in building automation, commercial buildings are now on the verge of
becoming smart. Thanks to a myriad of smart devices placed inside a building, intelligent buildings can
collect and process a variety of data and take data-based decisions to optimize their operations. This does not
only result in significant savings in energy costs but also increases the overall comfort for people inside the
building. There are several steps to reach a fully integrated smart building. Across all smart building domains,
manufacturers and integrators alike are struggling to climb the ladder of smartification by slowly adding more
and more functionalities to smart building devices.
A starting point can be first-level data collection thanks to accurate sensors, combined with increased energy
eiciency. The goal is to eventually reach a level of smartness in which advanced building analytics can be
conducted so that the building reacts in an intuitive way to its tenants. At the same time, the dierent domains of a
building should be integrated to increase the use of the collected data.
Infineon provides the right solutions for smart buildings as well as the system expertise and the partnership ecosystem
needed to make buildings smart.
www.infineon.com/smartbuilding
Levels of intelligence in smart building
Domains of a building
Entry level of integration:
Connectivity to building management
system platform.
Next level of integration:
Comprehensive command &
control over several domains
Extensive level of integration:
Extensive command &
control over all domains
Building management
system
Lighting Access control
Heating,
ventilation air,
conditioning
(HVAC)
Security and
surveillance
Shutter Valves and
pipes
Information &
communications
technology (ICT)
Public address
system
Intelligent lighting
solutions powered and
connected through
Power over Ethernet
(PoE) to collect data
from connected sensors
and gain more insights
Triggered fire alarm
activates lighting and
door systems to adjust
themselves in order to
guide people outside
in most eective and
eicient manner
Entering employee
triggers access
control to inform all
domains to adjust to
employee’s personal
preferences
Level of intelligence
Smart building
49
For more details on the product,
click on the part number.
Infineon oers a broad portfolio of products to transform ordinary buildings into smart buildings, ranging from sensors
and power management ICs to microcontrollers and security ICs.
› Best in class XENSIV™ sensor portfolio enabling accurate data collection in a building environment
› Leading MOSFETs, drivers and other power semiconductor solutions for power-eicient devices
› Microcontrollers for data processing and analyses at the edge
› Security ICs, developed with proven expertise, for strong protection of IoT devices against security threats
Additionally, Infineon has a long-standing expertise in common building automation domains, such as lighting and HVAC.
www.infineon.com/smartbuilding
Sensors
Microcontrollers
Connectivity and RF
Hardware security
Control unit, gateway, safety control
application, edge node
Voice user interface, predictive
maintenance, position sensing,
presence detection, authentication
5G backhaul enablement,
wireless connectivity, Ethernet, DALI
Power supply, power conversion,
motor control, LED driver
Trusted platform module, access
control, secure elements
Power semiconductors
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
50
For more details on the product,
click on the part number.
Power over Ethernet (PoE)
Design reliable and power eicient PoE power supplies
Power over Ethernet (PoE) has been around for years, but it is only with the new standard IEEE 802.3bt that the
maximum power that can be delivered via a twisted pair Ethernet cable has been significantly increased. Power sourcing
equipment (PSE) now provides up to 100 W per port whereas powered devices (PD) will have up to71 W available. The
adoption of this new PoE standard also depends largely on the capability of being able to increase the power density on
the PSE side while maintaining the same form factor. Infineon has a long-standing expertise in switched mode power
supply (SMPS) designs and oers a highly reliable, rugged and eicient high-quality MOSFET portfolio for your PoE PSE
and PD designs.
www.infineon.com/poe
Powered devices
Powered devices (PD) include devices
powered by PoE such as wireless access
points, 5G small-cell radio units, IP cameras,
conference systems, thin clients or public
address systems. DC-DC SMPS designs need to
be power eicient to maximize the available
power for the PD itself with the simultaneous
increase of power density. Moreover, PDs need
to function reliably in the field even under
potentially rough conditions for a long time.
Power sourcing equipment
Power sourcing equipment (PSE) is any equipment that is able to provide and source power on the twisted pair Ethernet
cable, such as PoE switches, PoE extenders and PoE injectors. PSE needs to be highly reliable to prevent device failure
and ensure uninterruptible operations of connected power devices. With IEEE 802.3bt PoE, the power demand for
PoE switches significantly increases with highest eiciency over broad-load condition. For example, to fully enable
a switch with six 802.3bt compliant PoE ports, up to 600 W of available PoE power budget is required. This will make
modifications in AC-DC SMPS designs necessary to fulfill these requirements.
Power over Ethernet (PoE)
Main power supply for Power Sourcing Equipment PoE port
AC-DC rectifier
Main power supply for power devices
51
For more details on the product,
click on the part number.
Recommended product portfolio for power sourcing equipment
Recommended product portfolio for powered devices
Recommended products powered device
www.infineon.com/poe
Functional block Product category Topology Product family Benefits
PFC High voltage MOSFETs DCM, CrCM, CCM, 600 V/650 V CoolMOS™ C7
600 V CoolMOS™ P7
› Best FOM RDS(on) *QG and RDS(on) *Eoss
› Lowest RDS(on) per package
› Lowest dependency of switching losses from Rg,ext
› Low turn-o losses, low Qoss, and low QG
Control ICs DCM, CrCM, CCM IRS2505L, ICE3PCS0xG, TDA4863G › Simple external circuitry
› High PFC and low THD
High voltage GaN CCM totem pole CoolGaN™ 600 V › Highest eiciency and highest power density
GaN driver ICs CCM totem pole 1EDF5673Fx/1EDS5663H EiceDRIVER™ › Low driving impedance (on-resistance 0.85 Ω source,
0.35 Ω sink)
› Input-output propagation delay accuracy: +/- 5 ns
› Functional and reinforced isolation available
SiC schottky diode DCM, CrCM, CCM CoolSiC™ Schottky diode 650 V G5/G6 › Low FOM VF *QC
Power silicon diode DCM, CrCM, CCM 650 V Rapid 1/2 diodes › Low conduction losses
DC-DC main stage High voltage MOSFETs Flyback (ACF), HB LLC,
FB LLC, ITTF, ZVS
600 V CoolMOS™ P7/C7/CFD7
650 V TRENCHSTOP™ F5
› Best FOM RDS(on) *QG and RDS(on) *Eoss
› Lowest RDS(on) per package
› Lowest dependency of switching losses from Rg,ext
› Low turn-o losses, low Qoss, and low QG
Low and medium voltage
MOSFETs
Isolated DC-DC
primary-side PWM
OptiMOS™ 60 V-200 V
StrongIRFET™ 60 V-200 V
Small signal MOSFETs 60 V-200 V
› Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
Gate driver ICs - EiceDRIVER™ 1EDNx/1EDi/2EDN7x/
2EDLx/ 2EDFx/2EDSx
› Broadest portfolio in terms of isolation, channels, and
protection
Control ICs HB LLC
PWM-QF
PWM-FF
ICE2HS01G
ICE5QSAG / ICE5QSBG
ICE5ASAG / ICE5GSAG
› High eiciency and low EMI
High voltage GaN Flyback (ACF), HB LLC,
FB LLC, ZVS
CoolGaN™ 600 V › Highest eiciency and highest power density
GaN driver ICs - EiceDRIVER™ 1EDF5673Fx/1EDS5663H › Low driving impedance (on-resistance 0.85 Ω source,
0.35 Ω sink)
› Input-output propagation delay accuracy: +/- 5 ns
› Functional and reinforced isolation available
PFC-main stage
combo
PFC control ICs Boost PFC, HB LLC IDP2308, IDP2303A › Low BOM, high eiciency, and low standby power
High voltage MOSFETs HB LLC 600 V CoolMOS™ P7 › Low turn-o losses, low Qoss, and low QG
› Fast-switching speed for improved eiciency and thermals
Rectification Low and medium voltage
MOSFETs
Synchronous
rectification
OptiMOS™ 100 V-150 V
OptiMOS™ 40 V-120 V
StrongIRFET™ 40 V-100 V
› Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
Gate driver ICs - EiceDRIVER™ 1EDNx/1EDi/2EDN7x/
2EDLx/2EDFx/2EDSx
› Broadest portfolio in terms of isolation, channels, and
protection
Control ICs Synchronous
rectification
IR1161L
IR11688S
› High eiciency
› Simple external circuitry
Or-ing Low and medium voltage
MOSFETs
Or-ing MOSFETs OptiMOS™ 25 V-200 V › Industry’s lowest FOM (RDS(on) *QG)
› Highest system eiciency and power density
Auxiliary power
supply
AC-DC integrated
power stage
Fixed frequency (FF)
Quasi resonant (QR)
CoolSET™ ICE5xR
CoolSET™ ICE5QR
› Quasi-resonant switching operation for high eiciency and
low EMI signature
› Fixed frequency switching operation for ease of design
Analog and digital
control IC
32-bit XMC™ industrial
microcontroller based on
Arm® Cortex®-M
- 32-bit XMC1000
32-bit XMC4000
› Flexibility, HR PWM, digital communication
› Arm® based standard MCU family and wide family
Port MOSFET
Medium voltage MOSFETs - IR MOSFET™ 100 V
OptiMOS™ 100 V › Widest SOA
› Outstanding quality and reliability
› Lowest RDS(on)
Functional block Product category Topology Product family Benefits
Active bridge
rectifier
Medium voltage
MOSFETs
Active bridge
rectifier
OptiMOS™ 100 V-150 V
› Industry’s lowest RDS(on)
› Highest system eiciency and power density
IR MOSFET™ 100 V
Rectification
Low and medium
voltage MOSFETs
Synchronous
rectification
OptiMOS™ 25 V-100 V
OptiMOS™ 40 V
IR MOSFET™ 20 V-100 V
› Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
Control ICs Synchronous
rectification
IR1161L& IR11688S
› High eiciency
› Simple external circuitry
DC-DC
switching stage
Medium voltage
MOSFETs
Flyback (ACF) OptiMOS™ 100 V-150 V
› Low conduction losses, reduced overshoot
› Logic level switching
AC-DC
backup SMPS
High voltage
MOSFETs Flyback (ACF) 600 V to 950 V CoolMOS™ P7
› Fast-switching speed for improved eiciency and thermals
› Reduced gate charge for enhanced light load eiciency
› Optimized gate-to-source voltage (VGS) threshold for lower
turn-o losses
AC-DC integrated
power stage Fixed frequency (FF)
Quasi resonant (QR)
CoolSET™ ICE5xR
CoolSET™ ICE5QR
› Quasi-resonant switching operation for high eiciency
and low EMI signatur
› Fixed frequency switching operation for ease of design
Power over Ethernet
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
52
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LED lighting
Solutions for cost sensitive applications as well as for smart lighting
At Infineon, we focus on supplying tailored products for LED drivers, LED strips, horticultural, and smart
lighting. Our broad portfolio of tailored products and solutions for LED lighting comprises LED driver
ICs, MOSFETs, and microcontrollers suited for LED drivers as well sensors and dedicated ICs for secure
communication. In addition to oering products of proven quality, a competent global lighting team
supports our lighting customers in designing LED lighting products and systems in collaboration with our
channel partners.
Key trends and challenges in LED lighting and our oering:
› Human-centric lighting (HCL)
– The lowest cost implementation of tunable white with single-stage flyback
constant voltage and smart linear regulators with advanced headroom control
ensuring high eiciency – BCR601
› Configuration of output current and some further parameters
– Our NFC controller allows the configuration of the output current without the need of an
additional microcontroller
– Our XDPL lighting IC family allows, besides output current, also adjustment of other features
like protection, dimming curves, etc.
› Cost reduction combined with eiciency increase
– Integration of resonance inductor for PFC + resonant topology enables highest eiciency at low cost.
Integration is enabled by the coreless transformer technology that enables high switching frequencies
LED drivers
AC-line
input
MCU
communication
intellegent control
Hardware-based
security
Wired/wireless
communication
0-10 V
dimming interface
Sensors
hub
LED module
Dimmer
PFC stage Main stage
Combo IC
LED lighting
www.infineon.com/lighting
53
For more details on the product,
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Recommended LED driver products
www.infineon.com/lighting
Functional block Product type Product family MOSFET technology Voltage class
PFC stage PFC IRS2505 CoolMOS™ P7 600/700/800/950 V 1)
Main stage PFC + LCC (constant current)
PFC + LLC (constant current)
ICL5102 2) CoolMOS™ P7 (up to 600 mΩ) 600 V/650 V
CoolMOS™ CE (above to 600 mΩ) 600 V
PFC + flyback (dual stage)
XDPL8220 3) / XDPL8221 2)
CoolMOS™ P7 800 V/950 V
PFC/flyback
(single-stage constant voltage) XDPL8105 CoolMOS™ P7 800 V/950 V
PFC/flyback (single-stage constant voltage) XDPL8218 CoolMOS™ P7 800 V/950 V
Buck / linear solutions Secondary buck (single-channel)
Secondary buck (multichannel)
ILD6150 / ILD8150 Integrated 60 V/80 V
Secondary linear BCR601 Small signal MOSFETs 75 V/100 V
Synchronous rectification Synchronous rectification controller IR1161 / IR11688 OptiMOS™ 100 V/150 V/200 V
Dimming 0-10 V dimming interface IC CDM10 V - -
CDM10 VD - -
NFC
NFC controller NLM0010 / NLM0011 * - -
Hardware based security OPTIGA™ OPTIGA™ Trust - -
Microcontroller XMC™ microcontroller XMC1100 - -
Sensors XENSIV™ radar sensor IC BGT24LTR11 - -
LED driver with constant voltage output and linear/switch mode LED driver ICs
Linear LED driver IC product portfolio
For additional portfolio of lighting ICs, take a look at pages 242-257.
Functional block Topology IC product family MOSFET technology
Lowest cost LED driver IC Linear BCR400W series Integrated
Low voltage drop LED driver IC BCR430 / BCR431 * *
Robust LED driver IC BCR40xU / BCR42xU
1) 700 V, 800 V and 950 V CoolMOS™ P7 are optimized for PFC and flyback topologies.
600 V CoolMOS™ P7 is suitable for hard as well as so switching topologies (flyback, PFC and LLC)
2) PFC and resonant combo controllers
3) PFC and flyback combo controllers
*Contains besides current configuration also Constant Lumen Output (CLO) feature
* * For more information on the product,
contact our product support
AC-line
input Synchronous
rectification
Main
stage
PFC stage Linear LED
driver IC
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
54
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Infineon is bringing reliability and safety to consumer projects. Millions of households worldwide rely on
power tools to complete daily tasks or creative projects around the home. Consumers want robust, reliable
and portable power tools that are easy-to-use with low price and long battery life as key selection options.
Battery-powered tools must also be equipped with diagnostic and safety features to ensure confidence with
high quality.
Infineon’s broad portfolio oers best-fit, innovative solutions for all power tools applications. We help you
meet each consumer need and reduce your overall costs. Also, our wireless-charging reference designs
deliver high performance and are easily optimized in our DAVE™ development platform. Configure your BOM
and exceed expectations with Infineon components in your cordless power tool designs.
www.infineon.com/powertools
Power and gardening tools
Battery-powered home and professional applications
Features and benefits
Key features
Comprehensive portfolio of products and solutions, easy to tailor to design
specification
Infineon oers complete solutions for power supplies, chargers and motor drives
Best-in-class MOSFETs e.g. OptiMOS™ and HEXFET™/StrongIRFET™ extend
battery lifetime and reduce chances for control failure
High reliability of Infineon components
Oering LV FETs with SMD packaging improves the productive capability by
automatic production, improves reliability and reduces assembly cost
Components featuring small form factor and compact design oering highest
power density and BOM savings thanks to lowest RDS(on)
Trustworthy hardware-based security
Highest quality standards and a safety-certified development process
Proven track record and outstanding partner network for embedded security
OPTIGA™ Trust enables authentication of components connected to the system
(e.g., battery pack recognition to avoid second-party batteries etc.)
Evaluation and demonstration boards for fast prototyping
Available simulations, documentation, and system support to reduce develop-
ment time and cost
Key benefits
Convenient selection of the right fit products thanks to broad portfolio and
complete solutions
Extended battery lifetime and product life span
Productive capability
Overall system size and cost reduction
Security, quality, and safety
Authentication
Short time to market
Power and gardening tools
55
For more details on the product,
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www.infineon.com/powertools
Current sensing
MOSFET temperature sensing
Position sensing
Gate driver
3-phase
inverter
USB,
serial
COM
XMC1000
microcontroller
User
interface
DC-DC Battery
18-36 V
Motor temperature sensing
MHall
sensors
Application block diagram example: cordless power tools
Infineon product oering Home and professional applications
Supply voltage 10.8-56 V
OptiMOS™ and HEXFET™/StrongIRFET™
power MOSFETs
Voltage 20-100 V
Package SuperSO8, PQFN 3x3, DirectFET™ S/M/L-Can, TOLL, TO-220, TO-247, DPAK, D²PAK, D²PAK 7-pin
CoolMOS™ P7 SJ MOSFET * Voltage 600-700 V
Gate driver ICs EiceDRIVER™ 1EDN/2EDN/6EDL04N02PR, 6ED003L02- F2, 2EDL05N06PF, 2ED2304S06F, IRS2005S/M, IRS2007S,
IRS2008S, IRS2301 *, IRS21867, IRS2304
Integrated: IFX9201SG/ BTN8982
IPM – CIPOS™ Nano IRSM005-800MH, IRSM005-301MH
Authentication IC, security OPTIGA™ Trust B
XMC™ microcontrollers
iMotion™
ePower
XMC1300, XMC4400/XMC4500,
iMOTION™ IRMCK099M
ePower: TLE987X (BLDC)
Microcontroller and driver supply:
linear voltage and DC-DC switching regulators
IFX1763/IFX54441/IFX54211/IFX30081/IFX90121/IFX91041
CAN transceivers IFX1050, IFX1051
XENSIV™ sensors Hall switches (TLE496X *), Angle sensor (TLI5012B), 3D magnetic sensor (TLV493D)
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
56
For more details on the product,
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Everyday routine is being increasingly pervaded by a growing number of wireless and battery powered
devices – electric vehicles (EVs) among them. This trend further drives a steadily rising demand for the
production of batteries with dierent charging capacities. Consequently, battery manufacturers find
themselves confronted with the challenge to increase eiciency throughout their production and meet the
required volume.
The essential stage every battery needs to undergo in the manufacturing process is battery formation. In it,
the newly assembled batteries are initially charged and discharged with high voltage and current accuracy
with the aim to activate the battery material. Formation cycling has great impact on battery lifetime, quality
and cost, but is currently the bottleneck in the production process as it is expensive and time-consuming.
With its comprehensive product portfolio of cost- and eiciency-optimized products Infineon oers full-spectrum
power system solutions, and adequately addresses the application requirements of high accuracy, eiciency
and power density.
Application diagram
Battery formation
Solutions that make battery formation equipment
more accurate and eicient
Features and benefits
Key features
High voltage and current accuracy (up to 0.01%) during charge and discharge cycles
High power density
High eiciency
Optimal thermal management during operation
High system reliability due to 24/7 operation cycles
Key benefits
Highly eicient, innovative and cost-attractive solutions leading to overall BOM
savings enabling size reduction
High power density semiconductors
Fast time to market due to the complete ecosystem:
› Simulations
› Documentation
› Demonstration boards
Increased lifetime and reliability due to Infineon’s quality
One-stop-shop portfolio
Control unit
Bidirectional AC-DC
Totem pole PFC boost converter
AC grid
Bidirectional DC-DC Non-isolated Bidirectional DC-DC
Dual active bridge resonance converter
V_PFC V_Bus
V_Bat
Buck/boost converter
CIN CIN
N
Gate driver
XMC™ microcontroller
Auxiliary power supply
CoolSET™ 5
COUT
COUT
Rsense
L1
L2
L3 Eice
DRIVER™
www.infineon.com/batteryformation
Battery formation
57
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www.infineon.com/batteryformation
Highlight/ recommended product portfolio
Functional block Product category Topology Product family Benefits
Bi-directional
AC-DC – PFC
CoolMOS™ MOSFET 600 V & 650 V TO-247 › Best-in-class Qrr and trr level
› Significantly reduced QG
› Improved eiciency over previous CoolMOS™ fast body diode series
CoolSiC™ MOSFET 650 V & 1200 V TO-247 › Input needed
TRENCHSTOP™ 5 IGBT 650 V TO-247 › Best-in-class eiciency, resulting in lower junction and case temperature
leading to higher device reliability
› Higher power density designs
TRENCHSTOP™ 6 IGBT 1200 V TO-247 › Low conduction losses with 1.85 V, VCE(sat) for S6 series
› Full rated, robust freewheeling diode
Gate driver 650 or 1200 V EiceDRIVER™ PG-DSO-16 › Integrated bootstrap diode
› Low level shi loss
› Excellent ruggedness against negative transient voltages on VS pin
Bi-directional
isolated
DC-DC
CoolMOS™ MOSFET 600 V and 650 V TO-247, D
2
PAK › Best-in-class Qrr and trr level
› Significantly reduced QG
› Improved eiciency over previous CoolMOS™ fast body diode series
CoolSiC™ MOSFET 650 V and 1200 V TO-247 › Combination of high performance, high reliability and ease of use
TRENCHSTOP™ 5 IGBT 650 V TO-247 › Best-in-class eiciency, resulting in lower junction and case temperature
leading to higher device reliability
› Higher power density designs
OptiMOS™ MOSFET 60 V – 150 V Shrink SuperSO8
SuperSO8
TOLL
D
2
PAK
› Lowest RDS(on)
› Ideal for high switching frequency
› Increased power density
› Reduced system cost
› Less paralleling
Bi-directional
non-isolated
DC-DC
OptiMOS™ MOSFET 25 V – 60 V Shrink SuperSO8
SuperSO8
TOLL
D
2
PAK
OptiMOS™ Power block 25 V and 30 V Power stage 5x6 › Integrated solution with low side and high side MOSFET
› Space reduction
› Minimized loop inductance
› Higher eiciency
Gate driver ICs Low-side with truly
dierential input
1EDNx550 in
PG-SOT23-6
› Control inputs independent from gate driver GND
› Fast Miller plateau transition
› Robust against false MOSFET triggering
› Increased power density and BOM savings
Functional level shi 2EDL in QFN package › Level-shi high and low side dual channel driver
› Strong source and sink current capability
› 120 V on-chip bootstrap diode
› Fast propagation delay
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
58
For more details on the product,
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Facing diminishing fossil reserves, the world nonetheless needs to manage rising demand for electrical energy while
meeting the growing call for urgent climate action. The transition to renewable energies has become inevitable.
Energy storage systems are a vital part to successfully manage this transition. Our system solutions help to
make energy storage the backbone of the new energy era. Our unique application expertise and comprehensive
oering makes us the natural choice to advance energy storage solutions in terms of eiciency, performance,
optimal cost, and Energy storage systems are a vital part to successfully manage this transition. Our system
solutions help to make energy storage the backbone of the new energy era. Our unique application expertise
and comprehensive oering makes us the natural choice to advance energy storage solutions in terms of
eiciency, performance, optimal cost, and innovation.
www.infineon.com/energy-storage-systems
Application diagram
Energy storage systems
Make energy storage systems the backbone of the new energy
era with our semiconductor system solutions
Features and benefits
Key features
Eficcient power convertion in DC-DC and AC-DC stage
Power dense design
Bi- direcitonal power flow
Safe operation of Lithium-ion battery
Long battery life time
Key benefits
Improvement of system performance with industry leading semiconductor
oering such as OptiMOS™, CoolMOS™, CoolSiC™ MOSFETs but also
best-in-class modules
Reduction of design eorts and faster time to market
Trust in a true partnership during the whole system lifetime
Full system provider form power conversion stage (PCS) to the battery management
system (BMS)
Energy storage systems
Grid
AC load
Gate driver
...
Sensing
Sensing/
Montioring
Protection
BMS
Security
XMC™ Microcontroller
DC-DC
Battery
conversion
DC-AC
conversion
Gate driver Sensing
Auxiliary power
supply
Gate driver
...
...
59
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www.infineon.com/energy-storage-systems
Highlight/ recommended product portfolio
Functional block Power/battery
voltage
Voltage
class
[VDS max]
Product family Package Benefits
Power conversion
systems (PCS)
< 10 kW 150 V OptiMOS™ Super S08, TOLL
› High power density and system cost reduction
600 V/650 V CoolMOS™ CFD7 / S7 TO-220/247,
ThinPAK 8x8,
TOLL
› Highest eiciency, enabling increased power density / more
compact and easier design
600 V
CoolSiC™ Schottky diode G6
TO-220
› Improved system eiciency and extremely fast switching
650 V CoolSiC™ MOSFET TO-247
› Combination of high performance, high reliability and ease
of use
10-100 kW 150 V OptiMOS™ TO-263
› High power density and system cost reduction
600 V CoolMOS™ C7/P7 TO-247
› Ease of use and fast design-in
650 V CoolSiC™ MOSFET TO-247
› Combination of high performance,
high reliability and ease of use
650 V TRENCHSTOP™ 5 H5 TO-247
› Benefit increase at high current conditions
650 V
CoolSiC™ Schottky diode C6
TO-220
› Higher frequency and increased power density
1200 V CoolSiC™ MOSFET TO-247
› Highest eiciency and increased power density
1200 V TRENCHSTOP™ 5/6 or S6 TO-247
› High device reliability and lifetime expectancy
101-250 kW 150 V OptiMOS™ D2PAK
› Enables and simplifies the setup of 2nd life batteries
› Lower switching voltage enables higher inverter eiciency
200 V OptiMOS™ D2PAK
› Enables and simplifies the setup of 2nd life batteries
› Lower switching voltage enables higher inverter eiciency
1200 V EasyPACK™ 2B Modules
› Highest eiciency for reduced cooling eort
1700 V PrimePACK™/ EconoDUAL™ Modules
› High power density
› Easy and most reliable assembly
> 0.25 MW 1200 V PrimePACK™ / EconoDUAL™ Modules
1700 V PrimePACK™/ EconoDUAL™ Modules
Gate driver EiceDRIVER™ 2EDS PG-DSO-16-NB
› Dual-channel functional isolated
› Dual-channel reinforced (safe) isolated
› Single-channel non-isolated
EiceDRIVER™ 2EDF PG-DSO-16-NB
EiceDRIVER™ 1EDN PG-SOT23-6
BMS –
battery protection
40-60 V 100 V OptiMOS™/OptiMOS™ LinearFET TOLL, D2PAK
› Highest system eiciency
› Minimize parallelization of MOSFETs
› Market leading MOSFETS with lowest RDSon enabling low
conduction losses
› Widest SOA area with LinearFET™
60-100 V 150 V OptiMOS™/OptiMOS™ LinearFET TOLL, D2PAK
100-150 V 200-300 V OptiMOS™/OptiMOS™ LinearFET D2PAK
150-400 V 600 V CoolMOS™ S7 TO-247
› Lowest RDS(on) MOSFET
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
60
Solar
For more details on the product,
click on the part number.
Infineon provides a comprehensive portfolio to deliver the best eiciency and reliability for solar applications. Infineon’s
cutting edge technologies such as CoolMOS™ SJ MOSFETs, HighSpeed3 IGBT and TRENCHSTOP™ 5, CoolSiC™ Schottky
diodes, CoolSiC™ MOSFETs, coreless transformer, driver, etc. combined with the rich experience and highest quality
ensure the company’s leader position in solar applications. The newly added Arm® Cortex™-M4 based MCU enables easy
and high eiciency design.
Infineon’s products for complete solar system
Solar
High eiciency designs for solar power systems
Optimizer
250-750 W
Single and multiple panel micro inverter
250 -1500 W
String inverter
1-200 kW
BAT165 Schottky diode
Auxiliary power supply CoolSET™
800 V
MOSFETs OptiMOS™
SuperSO8/DirectFET™ | 60-150 V
CoolMOS™
TOLL/D2PAK | 600-800 V
CoolMOS™
TO-247-3/TO-247-4 | 600/650 V
OptiMOS™
150-300 V
Microcontrollers
XMC1xxx Arm® Cortex®-M0 XMC1xxx Arm® Cortex®-M0XMC1xxx Arm® Cortex®-M0
XMC45xx Arm® Cortex®-M4 XMC45xx Arm® Cortex®-M4XMC45xx Arm® Cortex®-M4
SiC MOSFETs
SiC diodes
Easy 1B/2B
650 V TRENCHSTOP™ 5 / 1200 V HighSpeed 3
TO-247-3/TO-247-4/TO-247PLUS | 600 V/650 V/1200 V
Gate driver ICs EiceDRIVER™
2EDi/1ED Compact/SOI/ ED-F2/X3Compact/1EDB
Central inverter
500-5000 kW
XMC1xxx Arm® Cortex®-M0
XMC45xx Arm® Cortex®-M4
PrimePACK™ / EconoDUAL™ 3 / 62 mm
EiceDRIVER™
1ED Compact/1ED-F2/X3Compact/X3A/X3D/1EDB
EiceDRIVER™
2EDi/1EDB/1EDCompact/SOI/1ED-F2/1EDB
EiceDRIVER™
2EDi/1EDCompact/SOI/1EDB
OptiMOS™
SuperSO8 | DirectFET™ 60-200V
CoolSiC™ MOSFET
TO-247-3/TO-247-4 | 1200 V
IGBTs
CoolSiC™ Schottky diodes
DPAK/TO-220 | 600 V/1200 V
DPAK | 650 V
CoolSiC™ Schottky diodes
TO-220/TO-247/TO-247-2/DPAK/D2PAK| 650 V/1200 V
www.infineon.com/solar
Solar
Grid
Photovoltaic
panels
EiceDRIVER™
...
Sensing
MPPT
calculation
PWM
generation ADC
MCU with ARM® Cortex®-M4
MPP tracker
DC-DC conversion
DC-AC
conversion
EiceDRIVER™ Sensing
Auxiliary power
supply
Energy storage
(optional)
EiceDRIVER™
Sensing
Battery management
...
...
61
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Optimizer
Microinverter
Micro inverter can either be used per
› single (~300 W) PV panel or
› multiple PV panels (600 – 1500 W)
www.infineon.com/solar
DC 20 to 150 V
45 V (typ.) ~ DC 80 V (typ.)
MPPT
calculation PWM
generation ADC
XMC1000
OptiMOS™
OptiMOS™
OptiMOS™ OptiMOS™
PV
Microcontroller
power supply
Gate driver ICs
Functional
block
Product
family
Input
voltage
Voltage
class
[VDS max]
Package * Part
number *
RDS(on)
Buck boost
MPPT
OptiMOS™ ≤ 48 V 60 V SuperSO8 BSC012N06NS
1.2 mΩ
DirectFET™ BSB028N06NN3 G
2.8 mΩ
≤ 64 V 80 V SuperSO8 BSC021N08NS5
2.1 mΩ
DirectFET™ BSB044N08NN3 G
4.4 mΩ
≤ 80 V 100 V SuperSO8 BSC027N10NS5
2.7 mΩ
DirectFET™ BSB056N10NN3 G
5.6 mΩ
≤ 125 V 150 V SuperSO8 BSC220N20NSFD
9.3 mΩ
Gate driver ICs Single channel PG-SOT23-6 1EDN8550
Dual channel VDSON 2EDL81xx
Microcontroller XMC1000
Functional block Product family Voltage class [VDS max] Package * Part number * RDS(on)
MPPT – Boost stage OptiMOS™ 60 V SuperSO8 BSC028N06NS
2.8 mΩ
80 V BSC026N08NS5
2.6 mΩ
120 V BSC190N12NS3
19.0 mΩ
150 V BSC093N15NS5
9.3 mΩ
BSC160N15NS5
16.0 mΩ
CoolSiCTM Schottky diode 1200 V DPAK IDM02G120C5
2.0 A
IDM05G120C5
5.0 A
IDM08G120C5 8.0 A
Gate driver: EiceDRIVER™ VDSON-8 2EDL81xx
PG-DSO-8-60/PG-TSSOP-8-1 2EDN7524F
Inverter stage CoolMOS™ 600 V TO-Leadless IPT60R102G7 102.0 mΩ
D
2
PAK IPB60R145CDF7 * 145.0 mΩ
TO-247 IPW60R145CFD7 145.0 mΩ
650 V D
2
PAK IPB65R150CFD 150.0 mΩ
TO-247 IPW65R150CFD 150.0 mΩ
Gate driver: EiceDRIVER™ PG-DSO-16 2EDS8165H
2EDS8265H
Microcontroller XMC1000, XMC4000
Solar
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
62
For more details on the product,
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Solar
PV
PV
EiceDRIVER™ EiceDRIVER™ Sensors
MPPT
calculation
PWM
generation ADC
XMC4000
MPPT
PWM
Boost
TRENCHSTOP™ 5
OptiMOS™ 5
OptiMOS™ 5
OptiMOS™ 5OptiMOS™ 5
OptiMOS™ 5
OptiMOS™ 5OptiMOS™ 5
PV
Grid
Multilevel inverter
Microcontroller
power supply
SiC diode /
Rapid diode
OptiMOS™ 5
Single-phase string inverter – multilevel topology
In multilevel inverter, four high voltage MOSFETs/IGBTs in H-bridge topology are replaced with a higher number of
lower voltage MOSFETs. Compared to a conventional H-bridge inverter, a multilevel inverter, composed of lower
voltage MOSFETs, oers several advantages:
› With much lower RDS(on) and switching loss parameters it significantly reduces conduction and switching losses
› Higher eective output frequency (smaller magnetics) is possible with lower switching losses
› Improved EMC due to reduced switching voltages
› Significant reduction in cooling system, size and weight
Discrete power devices for multilevel string inverter
Functional block Product family Voltage class [VDS max] Package Part number RDS(on)
Boost CoolMOS™ 600 V TO-247 IPW60R017C7
17 mΩ
TO-247 IPW60R024P7
24 mΩ
D
2
PAK IPB60R045P7
45 mΩ
IGBT TRENCHSTOP™ 5 650 V TO-247 IKW40N65EH5,
IKW40N65ES5
40 A
D
2
PAK IKB40N65EH5, IKB40N65ES5
40 A
CoolSiC™ Schottky diode 650 V TO-247 IDW20G65C5
20 A
EiceDRIVER™ 1EDN PG-SOT23-6 1EDN8511B
4 A / 8 A
Flying-capacitor-based
active neutral-point-clamp
(NPC)
OptiMOS™ 150 V SuperSO8 BSC093N15NS5 9.3 mΩ
SuperSO8 BSC110N15NS5 11 mΩ
DirectFET™ IRF150DM115 * 11.3 mΩ
D
2
PAK IPB044N15N5 4.4 mΩ
D
2
PAK IPB048N15N5 4.8 mΩ
Gate driver ICs EiceDRIVER™ 2EDi NB-DSO16 2EDF7275F 4 A / 8 A
Microcontroller XMC4000
www.infineon.com/solar
*For more information on the product, contact our product support
63
For more details on the product,
click on the part number.
Solar
Single-phase string inverter
Three-phase string inverter
www.infineon.com/solar
H4 topology
Discrete power devices for string inverter
H6 topology
Inverter
PV
PV
EiceDRIVER™
...
EiceDRIVER™
...
Sensors
MPPT
calculation
PWM
generation ADC
XMC4000
MPPT
PWM
Boost
CoolMOS™
CoolSiC™
Schottky
diode
CoolMOS™/TRENCHSTOP™
< 600 DC
(typ.) Grid
CoolMOS™/ TRENCHSTOP™
Microcontroller
power supply
Inverter
PV
PV
EiceDRIVER™
...
EiceDRIVER™
...
Sensors
MPPT
calculation
PWM
generation ADC
XMC4000
MPPT
PWM
Boost
CoolMOS™
CoolSiC™
Schottky
diode
400 DC
(typ.)
Grid
Microcontroller
power supply
Circuit
Breaking
CoolMOS™/TRENCHSTOP™
Inverter
type
Functional
block
Product
category
Product
technology
Voltage Package Part number RDS(on) Ampere
Single phase MPPT –
Boost stage
Si MOSFET CoolMOS™ P7 600 V TO-247-3 IPW60R037P7 37 mΩ -
TO-247-4 IPZA60R037P7 37 mΩ -
SiC MOSFET CoolSiC™ MOSFET 650 V TO-247-4 IMZA65R027M1H 27 mΩ -
TO-247-3 IMW65R048M1H 48 mΩ -
1200 V TO-247-3 IMW120R045M1 45 mΩ -
IGBT TRENCHSTOP™ 5
S5/H5
650 V TO-247-3 IKW40N65ES5, IKW40N65EH5 - 40 A
TO-247-4 IKZ50N65ES5, IKZ50N65EH5 - 50 A
Diode CoolSiC™ diode 650 V TO-247 IDW20G65C5 - 20 A
Inverter Si MOSFET CoolMOS™ C7 650 V TO-247-3 IPW65R65C7 * 65 mΩ -
CoolMOS™ S7 600 V TO-Leadless IPT60R022S7 22 mΩ -
IPT60R040S7 40 mΩ -
CoolMOS™ CFD 7 600 V TO-247-3 IPW60R018CFD7 18 -
600 V TO-247-3 IPW60R031CFD7 31 -
SiC MOSFET CoolSiC™ MOSFET 650 V TO-247-4 IMZA65R027M1H 27 mΩ -
TO-247-3 IMW65R048M1H 48 mΩ -
1200 V TO-247-3 IMW120R045M1 45 mΩ -
IGBT TRENCHSTOP™ 5
S5/H5
650 V TO-247-4 IKZ50N65ES5, IKZ50N65EH5 - 50 A
TO-247-3 IKW40N65ES5, IKW40N65EH5 * - 40 A
Gate driver ICs EiceDRIVER™ 1ED Compact, EiceDRIVER™ 2EDN Family
Three phase MPPT
– Boost
stage
IGBT HighSpeed 3 1200 V TO-247-3 IKW40N120H3 - 40 A
TO-247PLUS-3 IKQ75N120CH3 - 75 A
SiC MOSFET CoolSiC™ MOSFET 1200 V TO-247-3/-4 IMW120R030M1H, IMZ120R030M1H 30 mΩ -
IMW120R045M1, IMZ120R045M1 45 mΩ -
IMW120R060M1H, IMZ120R060M1H 60 mΩ -
Inverter IGBT HighSpeed 3 1200 V TO-247-3 IKW40N120H3 - 40 A
TO-247PLUS-3 IKQ750N120CH3 * - 75 A
SiC MOSFET CoolSiC™ MOSFET 1200 V TO-247-3/-4 IMW120R030M1H, IMZ120R030M1H 30 mΩ -
IMW120R045M1, IMZ120R045M1 45 mΩ -
IMW120R060M1H, IMZ120R060M1H 60 mΩ -
Gate driver ICs EiceDRIVER™ 1ED Compact, EiceDRIVER™ 2EDN family, EiceDRIVER™ 1EDB
Microcontroller XMC4000
Inverter
PV
PV
EiceDRIVER™
...
Sensors
MPPT
calculation PWM
generation ADC
XMC4000
MPPT
PWM
Boost
1200 V HighSpeed 3/
CoolSiC™ MOSFET
<1000 V
(typ.)3~
Grid
650 V
TRENCHSTOP™ 5
Grid
Microcontroller
power supply
EiceDRIVER™
...
Phase A
Phase B
Phase C
1200 V
CoolSiC™
Schottky
diode
1200 V
CoolSiC™
MOSFET
1200 V HighSpeed 3 /
CoolSiC™ MOSFET
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
64
Uninterruptible power supply
For more details on the product,
click on the part number.
UPS
Uninterruptible power supply (UPS)
Attractive solutions for highest eiciency and power density
Today’s uninterruptible power supply systems introduce a wide range of challenges. Overcoming them requires an
increase in output power, energy eiciency and power density. We oer complete system-level solutions and high
quality products for diverse uninterruptible power supply applications. Equipped with our semiconductors, UPS
applications can achieve best-possible power-conversion eiciency and cutting-edge power density. The benefits are
cost reduction and fewer passive components – regardless of the topology used.
Our solutions and products for UPS applications fulfill the latest market requirements. This includes the trend of
modularization of UPS brick units due to scalable power demand from data centers, as well as the topology shi
from two-level to three-level to achieve higher eiciency. Our products are suitable for any kind of uninterruptible
power supplies in telecom, data center, server or industrial automation environments.
www.infineon.com/ups
Oline UPS
CoolMOS™ SJ MOSFETs
500-950 V
OptiMOS™ and StrongIRFET™
20-300 V
Online UPS
MOSFETs
IGBTs
Auxiliary power supply
TRENCHSTOP™ IGBT6
TRENCHSTOP™ 5 H5
CoolSET™
650-800 V
SiC diodes
Driver ICs
EiceDRIVER™ 1EDi
EiceDRIVER™ 2EDi
XMC1300 series
CoolSiC™
Schottky diode
EiceDRIVER™ 1ED Compact
Power module and stack
Microcontrollers
EasyPACK™
65
For more details on the product,
click on the part number.
UPS
Oline UPS
Bidirectional UPS power stage
Full-bridge bidirectional power stage Push-pull bidirectional power stage
Bidirectional
charger / inverter
Battery
12 V / 24 V
Grid Load
Sensing
www.infineon.com/ups
Battery voltage Topology MOSFET
breakdown voltage
TO-220 TO-247 D
2
PAK and D
2
PAK-7 Gate drivers
Inverter/charger
MOSFETs
12 V Push-pull 60 V IRFB7530
IRFB7534
IRFB7540
IRFB7545
IRFP3006
IRFP7530
IRFP7537
IRFS7530
IRFS7530-7P
IRS44273
IRS4427
1EDN751x
2EDN851x *
Full-bridge 30 V
40 V
IRLB3813
IRLB8314
IRLB8743
IRFB7430 (40 V)
IRFP7430 IRFS7430 (40 V)
IRFS7430-7P (40 V)
IRS211X *
IRS2186
2EDL811X
1EDN7550B
24 V Push-pull 75 V
100 V
IRFB3077
IRFB3207
IRFB7730
IRFB7734
IRFP7718 IRFS7430
IRFS7734
IRF3610S (100 V)
IRFS4010 (100 V)
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 40 V
60 V
IRFB7430
IRFB7434
IRFB7545 (60 V)
IRF60B217 (60 V)
IRFP7530
IRFP3006
IRFP7537
IRFS7430
IRFS7430-7P
IRF7430*
IRFS7530-7P
IRS211X *
IRS2186
2EDL811X
1EDN7550B
48 V Push-pull 150 V IRFB4115
IRFB4321
IPP046N15N5 *
IRFB4228
IRFB4019
IRFP4568
IRFP4321
IRF150P220
IRF150P221
IRFS4321
IRFS4115
IRB048N15N5*
IRFS4615
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 100 V IPP030N10N
IRFB4110
IPP086N10N3G
IRFB4510
IPP180N10N3G
IRFP4468
IRFP4110
IRF100P218
IRF100P219
IRFS3610 *
IRF3710S
IRF8010S
IRFS4510
IRFS4010
IRS211X *
IRS2186
2EDL811X
1EDN8550B
72 V Push-pull 200 V IPP110N20N3
IRFB4127
IRFB4227
IPP320N20N3
IRFB4320 *
IRF200P222
IRFP4668
IRF200P223
IRFP4127
IRFP4227
IPB110N20N3LF
IRFS4127
IRFS4227
IRFB117N20NFD *
IRF200S234
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 150 V IRFB4321
IPP046N15N5 *
IRFP4568
IRF150P220
IRFS4321
IRB048N15N5 *
IRS211X *
IRS2186
2EDL811X
Full-bridge 200 V IPP110N20N3
IRFB4227
IRF200P222
IRFP4668
IPB110N20N3LF
IRFS4127
IRS211X *
IRS2186
2EDL811X
Microcontrollers 12-72 V XMC1300 series
Battery +
XMC1300
PWM
generation
ADC
Display
drive
Battery -
LF transformer
StrongIRFET™
HB driver
Grid
HB driver
Battery +
XMC1300
PWM
generation
ADC
Display
drive
Battery -
LS
gate driver
LS
gate driver LF transformer
StrongIRFET™
Grid
Tap select
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
66
For more details on the product,
click on the part number.
Unidirectional
Unidirectional power stage (output stage)
Battery
12 V / 24 V
AC-DC
charger
DC-DC
step up Inverter + filter
Multistage
Grid Load
Sensing
Unidirectional DC-DC stage
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 D
2
PAK and D
2
PAK-7 Gate drivers
12 V Push-pull 40 V IRFB7430
IRFB7434
IRFP7718 IRFS7430
IRFS7430-7P
IRF7430 *
IRS44273
IRS4427
1EDN851X
2EDN852X
60 V IRFB7540
IRFB7545
IRF60B217
IRFS7530-7P
75 V IRFP7718
24 V Push-pull 75 V IRFB3077
IRFB3207
IRFB7730
IRFB7734
IRFP7718 IRFS7730
IRFS7734
100 V IRF100P218
IRFP4468
IRFS4010
IRF3610S
150 V IRFB4115
IRFB4321
IPP046N15N5*
IRFB4228
IRFB4019
IRF150P220
IRFS4321
IRFS4115
IRB048N15N5 *
IRFS4615
Microcontrollers XMC1300 series
www.infineon.com/ups
UPS
Battery +
XMC1300
HB
driver
PWM
generation
ADC
Display
drive
HB
driver
Battery -
LS
gate driver
LS
gate driver HF transformer
Grid
DC-DC stage Inverter stage
CoolMOS™
StrongIRFET™
*For more information on the product, contact our product support
67
For more details on the product,
click on the part number.
Unidirectional inverter stage
Unidirectional charger
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 Gate drivers
200 V Full-bridge inverter
120 VAC
300 V IPP410N30N
IRFB4137
IRF300P226
IRF300P227
IRFP4868
IRFP4137
IRS211X *
IRS2186
400 V Full-bridge inverter
220 VAC
500 V IPP50R280CE
IPP50R380CE
IPP50R190CE
IPW50R190CE IRS211X *
IRS2186
Microcontrollers XMC1300 series
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 PG-DIP-7
12-72 V Flyback 650 V CoolSET™ ICE3RBR1765JZ
ICE3RBR0665JZ
12-72 V Flyback 800 V CoolMOS™ P7 IPP80R750P7
IPP80R600P7
IPP80R450P7
IPP80R360P7
IPP80R280P7
Microcontrollers Integrated, ICE3AS03LJG, ICE3BS03LJG
www.infineon.com/ups
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
68
For more details on the product,
click on the part number.
Active
front end
or
rectifier
Inverter
Microcontroller
Auxiliary power
supply
voltage
regulation
Gate driver
+
isolation
Gate driver
+
isolation
Grid Load
Communication
interface
Battery charger
Online UPS
Online UPS power stage
Stage Topology Voltage class Technology Part number
Rectifier Three-phase 800 V/1600 V EasyBRIDGE, EconoBRIDGE™
PFC Boost PFC / Vienna “T-type” 1200 V TRENCHSTOP™ IGBT6 IKW40N120CS6
IKQ75N120CS6
Boost PFC / Vienna rectifier 1200 V CoolSiC™ MOSFET F3L15MR12W2M1_B69
Boost PFC / Vienna “T-type” 650 V TRENCHSTOP™ 5 H5 IKW50N65EH5
IKW75N65EH5
Boost PFC 600 V/1200 V EasyPACK™
Boost PFC 1200 V CoolSiC ™ Schottky diode
PFC 600 V CoolMOS™ P7 IPP60R060P7
IPB60R060P7
PFC 600 V CoolMOS™ C7 IPP60R040C7
IPB60R040C7
Inverter NPC 1 650 V TRENCHSTOP™ 5 H5 IKW50N65EH5
IKW75N65EH5
IKZ50N65EH5
IKZ75N65EH5
NPC 1 650 V TRENCHSTOP™ 5 S5 IKW50N65ES5
IKW75N65ES5
NPC 1 650 V TRENCHSTOP™ HighSpeed3 IGBT
Rapid diode
FS3L50R07W2H3F_B11
NPC 2 1200 V TRENCHSTOP™ IGBT6 IKW40N120CS6
IKQ75N120CS6
NPC 2 1200 V CoolSiC ™ Schottky diode
NPC 2 1200 V TRENCHSTOP™ HighSpeed3 IGBT
Rapid diode
FS3L25R12W2H3_B11
F3L200R12W2H3_B11
F3L200R12W2H3_B47 *
NPC 2 650 V TRENCHSTOP™ 5 S5 IKW50N65ES5
IKW75N65ES5
Two-level 1200 V EconoPACK™ , EasyPACK™ FS75R12W2T4_B11
FS200R12KT4R_B11
Two-level 1200 V EconoDUAL™ FF600R12ME4_B11
Three-level NPC1 600 V/1200 V EconoPACK™ F3L300R07PE4
Battery charger Half-bridge 1200 V TRENCHSTOP™ IGBT6 IKW40N120CS6
IKQ75N120CS6
1200 V CoolSiC™ MOSFET FF6MR12W2M1_B11
650 V TRENCHSTOP™ 5 H5 IKW50N65EH5
IKW75N65EH5
Gate driver ICs Single-channel 1200 V EiceDRIVER™ 1ED Compact
AUX - 650-800 V CoolSET™
www.infineon.com/ups
UPS
*For more information on the product, contact our product support
69
SMPS - embedded power supply
For more details on the product,
click on the part number.
Embedded power supply
Customers who design or manufacture a product that needs embedded intelligence typically want to focus on the
system design of their product, be it white goods, a vending machine, an automatic door opener or any other product.
They do not want to spend valuable eorts and time in designing the power supply systems. They just want to use
them, having a trouble-free, EMI friendly, and reliable power supply.
Along with a wide range of products, we developed flexible and easy to reuse reference designs with the intention to
provide our customers with best fitting solutions tailored for their dierent needs.
Depending on these needs, our customers can select very low-cost power supply reference designs featuring high
integration or using a platform approach to reuse the same power designs for dierent products that need dierent
power supplies. If high eiciency is needed, for example to meet ENERGY STAR label requirements or to improve
overall thermal performance, we oer power supply reference designs with the outstanding eiciency levels.
Our comprehensive reference design oering coupled with application notes help our customers to drastically
improve the eiciency of their power supply by using secondary-side synchronous rectification instead of a rectifier
diode. Benefits of synchronous rectification are greater eiciency and improved thermal performance of the power supply.
SMPS
Full system solutions for embedded power supplies
www.infineon.com/smps
Functional block Product category Topology Technology Benefits
Auxiliary power supply Control ICs QR/FF flyback CoolSET™ 700 V/800 V
ICE5QRxx70/80A(Z)(G)
› Low standby power, high eiciency and
robustness
Flyback Control ICs QR flyback ICE5QSAG › High eiciency and low standby power
High voltage MOSFET Flyback
700 V/800 V CoolMOS™ P7
› Best price competitive CoolMOS™ family
› Lower switching losses versus standard
MOSFET
› Controlled dV/dt and di/dt for better EMI
DC
Flyback
AC
Vin Vout
Flyback
Rectification
DC
AC
Vin Vout
Flyback non-AUX
Rectification
PFC Main stage
Vbus
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
70
SMPS - industrial SMPS
For more details on the product,
click on the part number.
Industrial SMPS powers a wide range of devices from industrial automation robots to medical equipment and vending
machines. With the expansion of the Internet of Things (IoT) and the adoption of Industry 4.0, the demand for industrial
SMPS is on the rise. Industrial switch-mode power supplies (SMPS) are mostly operated in environments such as
outdoor without air conditioning, or systems without fans. Such operating conditions make reliability and robustness
the key requirements for the industrial SMPS, especially when it comes to high temperature operations, outdoor use,
line surges, load jumps, short circuit ,etc.
In addition to quality, reliable supply and long-term product availability are also some of the key customer concerns.
Industrial SMPS life cycle goes over 10 years and it takes 3 to 5 years to ramp. Hence, not only do customers need a
high quality products, but also a stabile and reliable supply over the industrial SMPS lifecycle (10 to 20 years). Infineon
oers this with its CoolMOS™, OptiMOS™ and StrongIRFET™ product families, which thanks to the high robustness
and reliable performance have been meeting customer and market requirements for more than 20 years. Infineon’s
products oer the best price/performance ratio along with highest eiciency and reliability. For new designs, we
highlight our CoolMOS™ P7 600 V/800 V/950 V parts, as well as the latest generation of OptiMOS™ 30 V/40 V/60 V/80 V
/
100 V/150 V and 250 V products. For designs with convection-cooled, high power supplies, our CoolMOS™ S7 in active
bridge will reduce the power losses to enable the operation without fans.
Industrial SMPS
Reliable and robust
www.infineon.com/smps
Functional block Product category Topology Technology Benefits
PFC/Main stage High voltage MOSFETs CrCM/DCM PFC 600 V / 800 V / 950 V CoolMOS™ P7 › Best thermal performance
› Rugged body diode
› ESD enhancement for production line
› Wide RDS(on) portfolio including both THD
and SMD packages
600 V CoolMOS™ P6 › Fast-switching speed for improved eiciency
and thermals
› Low gate charge for enhanced light-load
eiciency and low power consumption at no
load condition
› Optimized VGS threshold for low turn-o losses
600 V CoolMOS™ S7 › PFC Eiciency boost ~1%
› Lowest RDS(on) in SMD packages
Boost diodes DCM PFC 650 V Rapid 1 › Low conduction losses
CCM PFC 650 V Rapid 2 › Low reverse recovery losses and PFC switch
turn-on losses
Control ICs CCM PFC ICs ICE3PCS0xG › High PFC and low THD
Main stage Control ICs HB LLC ICs 650 V – ICE1HS01G-1/ ICE2HS01G › High eiciency and low EMI
Synchronous rectification Medium voltage diodes HB LLC + center-tap OptiMOS™ 30 V/40 V/60 V/80 V/150 V/250 V › Optimized cost/performance and low thermals
Industrial SMPS
DC
AC
Vin Vout
PFC-PWM with AUX and ICs
Rectification
PFC Main stage
Vbus
71
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
72
For more details on the product,
click on the part number.
› Fast EV charging
› E-mobility
› Light electric vehicles and forklis
› Multicopter
Advanced system solutions
for transportation and
infrastructure
73
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
74
For more details on the product,
click on the part number.
Fast EV charging
www.infineon.com/ev-charging
As e-mobility increasingly becomes part of daily life, there is a growing need for more eicient charging
solutions. Fast electric vehicle (EV) charging stations equipped with powerful DC chargers are the answer.
DC EV chargers are an attractive choice because they allow much faster charging than the standard AC EV
ones that many EV owners have at home. Today, a DC charger with 150 kW can put a 200 km charge on an EV
in around 15 minutes. As fast charging and battery technologies continue to evolve and improve in the near
future, experts anticipate the charging time to drop even further.
As a market leader and the global front-runner in power electronics, Infineon enables you to bring
energy-eicient DC EV charger designs to life, with our highly eicient components and in-depth technical
support. We cover power ranges from kilowatts to megawatts in our broad portfolio of high-quality power
semiconductors, microcontrollers, gate drivers and security, safety, and authentication solutions. Our
CoolMOS™ and CoolSiC™ MOSFETs, for example, are ideal in a wide range of DC EV charging designs. Their
matchless advantages include high frequency operation, high power density and reduced switching losses,
allowing you to reach high levels of eiciency in any battery charging system.
Fast EV charging
Advanced solutions for DC EV charging
Application diagram
AC-DC
including
PFC
Gate driver and galvanic isolation
Internal power supply
Microcontroller
AURIX™ / XMC™
DC-DC
stage
DC power to batt
eries
Communication
to car - end user
Communication
to user
Human-machine
interface
(HMI)
Authentication/encryption
and communication
AC power in
Current
sensor
Current
sensor
Infineon oering and customer benefits
Infineon oering
CoolMOS™ and CoolSiC™ discrete and power module semiconductor solutions
EiceDRIVER™ and XMC™ microcontroller
XENSIV™ magnetic current sensor
OPTIGA™
Power supply ICs (LDO, DC-DC)
Communication (CAN transceiver)
Customer benefits
Highly eicient power conversion for reducing system size by up to 50 %
and reduced cooling eorts
Scalability across various platforms for upgrading system power charger
levels on demand
Safe drive and ease of control
Bidirectional high precision current sensing
Identity protection against fake devices and protection against the
manipulation of the data
Robust quality and easy to use implementation shorten time to market
and guarantee long operation
75
For more details on the product,
click on the part number.
www.infineon.com/ev-charging
Infineon’s solution recommendation for DC EV charging system blocks
Our solutions are designed for harsh environmental conditions and long lifetime as we have an excellent understandin
g
of quality requirements. Take the next step by exploring our product portfolio for DC EV charging systems.
Product category Product family Product Additional information
High voltage MOSFET /
SiC MOSFET / IGBT
650 V CoolMOS™ C7 IPW65R019C7 650 V, 19 mΩ, TO-247
600 V CoolMOS™ C7 IPW60R017C7 600 V, 17 mΩ, TO-247
600 V CoolMOS™ P7 IPW60R024P7 600 V, 24 mΩ, TO-247
IPW60R037P7 600 V, 37 mΩ, TO-247
IPW60R060P7 600 V, 60 mΩ, TO-247
650 V TRENCHSTOP™ 5 H5 IKW50N65EH5/IKZ50N65EH5 650 V, 50 A, TO-247-3/4
IKW75N65EH5/IKZ75N65EH5 650 V, 75 A, TO-247-3/4
1200 V CoolSiC™ MOSFETs IMW120R045M1/IMZ120R045M1 1200 V, 45 mΩ, TO-247-3/4
1200 V CoolSiC™ Easy modules F3L15MR12W2M1_B69 1200 V, 15 mΩ, Easy 2B, Vienna rectifier phase leg
FS45MR12W1M1_B11 1200 V, 45 mΩ, Easy 1B, six-pack
SiC diodes 1200 V CoolSiC™ Schottky diodes generation 5 IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2
IDW20G120C5B/IDWD20G120C5 1200 V, 20 A, TO-247-3/2
IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2
PFC stage (three-phase input)
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
76
For more details on the product,
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www.infineon.com/ev-charging
Product category Product family Product Additional information
Gate driver ICs EiceDRIVER™ (non-isolated) 1EDN family, 2EDN family Single-channel/dual-channel, non-isolated low-side gate driver ICs
2ED24427N01F * 10 A dual-channel low-side gate driver with DSO-8 power pad package
EiceDRIVER™ level shi gate
driver
IR2214SS, 2ED2184S06F,
2ED2110S06M*
1200 V / 650 V half-bridge gate driver for IGBTs and MOSFETs with level-shi
technology
EiceDRIVER™
(galvanic isolation)
2EDF7175F, 2EDF7275F Dual-channel functional isolated (1,5 kV)
2EDS8265H, 2EDS8165H Dual-channel reinforced (safe) isolated (6 kV)
1EDI40I12AF/H, 1EDI60I12AF,
1EDI60I12AH, 1EDC40I12AH,
1EDC60I12AH, 1ED3124MU12H/F*
1200 V single-channel, galvanic isolated driver with separate source and
sink outputs to drive CoolMOS™ SJ MOSFETs in floating mode as in Vienna
rectifier variants
1EDC20H12AH, 1EDC60H12AH,
1ED020I12-F2, 2ED020I12-F2
1ED3491MU12M*
1200 V, single-channel/dual-channel, galvanic-isolated driver recommended
to drive CoolSiC™ MOSFETs and CoolSiC™ EasyPack™ power modules
1EDI30I12MF/H, 1EDC30I12H*,
1EDI10I12MF/H, 1EDC10I12MH
1ED3122MU12H *
1200 V, single-channel, galvanic-isolated driver with integrated Miller clamp
to drive TRENCHSTOP™ 5 IGBTs H5
Gate driver and galvanic isolation
Fast EV charging
Product category Product family Product Additional information
High voltage MOSFET /
SiC MOSFET
600 V CoolMOS™ CFD7 / CSFD IPW60R018CFD7 600 V, 18 mΩ, TO-247
IPW60R024CFD7 600 V, 24 mΩ, TO-247
IPW60R037CSFD 600 V, 37 mΩ, TO-247
IPW60R040CFD7 600 V, 40 mΩ, TO-247
IPW60R055CFD7 600 V, 55 mΩ, TO-247
IPW60R070CFD7 600 V, 70 mΩ, TO-247
600 V CoolMOS™ C7 IPW65R045C7 650 V, 45 mΩ, TO-247
600 V CoolMOS™ P7 IPW60R080P7 600 V, 80 mΩ, TO-247
650 V CoolMOS™ CFD7 IPW65R029CFD7 * Coming soon ,650 V, 29 mΩ, TO-247
IPW65R029CFD7 * Coming soon , 650 V, 29 mΩ, TO-247-4
1200 V CoolSiC™ SiC MOSFET IMW120R045M1/IMZ120R045M1 1200 V, 45 mΩ, TO-247-3/4
1200 V CoolSiC™ Easy module FF6MR12W2M1(P)_B11 * 1200 V, 6 mΩ, Easy 2B, half-bridge
FF8MR12W2M1(P)_B11 * 1200 V, 8 mΩ, Easy 2B, half-bridge
FF11MR12W1M1_B11 1200 V, 11 mΩ, Easy 1B, half-bridge
FF23MR12W1M1(P)_B11 * 1200 V, 23 mΩ, Easy 1B, half-bridge
F4-23MR12W1M1(P)_B11 * 1200 V, 23 mΩ, Easy 1B, fourpack
FS45MR12W1M1_B11 1200 V, 45 mΩ, Easy 1B, sixpack
SiC Diodes
Output rectification diodes
1200 V CoolSiC™ Schottky diode generation 5 IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2
IDW20G120C5B/IDWD20G120C5 1200 V, 20 A, TO-247-3/2
IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2
650 V CoolSiC™ Schottky diode generation 5 IDW12G65C5 650 V, 12 A, TO-247
IDW16G65C5 650 V, 16 A, TO-247
IDW20G65C5 650 V, 20 A, TO-247
IDW20G65C5B 650 V, 10 A, TO-247
IDW24G65C5B 650 V, 24 A, TO-247
IDW30G65C5 650 V, 30 A, TO-247
IDW32G65C5B 650 V, 32 A, TO-247
IDW40G65C5 650 V, 40 A, TO-247
IDW40G65C5B 650 V, 40 A, TO-247
650 V CoolSiC™ Schottky diode generation 6 IDH20G65C6 650 V, 20 A, TO-220
IDH16G65C6 650 V, 16 A, TO-220 real 2-pin
IDH12G65C6 650 V, 12 A, TO-220 real 2-pin
IDH10G65C6 650 V, 10 A, TO-220 real 2-pin
IDH08G65C6 650 V, 8 A, TO-220 real 2-pin
IDH06G65C6 650 V, 6 A, TO-220 real 2-pin
IDH04G65C6 650 V, 4 A, TO-220 real 2-pin
IDDD20G65C6 650 V, 20 A, Double DPAK
IDDD16G65C6 650 V, 16 A, Double DPAK
IDDD12G65C6* 650 V, 12 A, Double DPAK
IDDD10G65C6 650 V, 10 A, Double DPAK
IDDD08G65C6 650 V, 8 A, Double DPAK
IDDD06G65C6 650 V, 6 A, Double DPAK
IDDD04G65C6 650 V, 4 A, Double DPAK
HV DC-DC main stage
(P): Module with pre-applied thermal interface material (TIM)
* For more information on the product, contact our product support
77
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* For more information on the product, contact our product support
www.infineon.com/ev-charging
Product category Product family Product Additional information
Security OPTIGA™ Trust B SLE952500000XTSA1
Assymetric ECC authentication with individual certificate key pair and
an extended temperature range of -40 to 110°C
OPTIGA™ Trust TPM SLB9670XQ2.0 *
Fully TCG TPM 2.0 standard compliant module with the SPI interface
SLC37 SLC37ESA2M0,
SLI97CSIFX1M00PE *
New class of performance and security cryptocontroller adhering to
CC EAL6+ high targeted and EMVCo targeted certifications for payment
and eSIM applications
Product category Product family Product Additional information
AC-DC power conversion CoolSET™ 5 QR/FF flyback ICE5QR0680AG 800 V, 42 W, 710 mΩ, PG-DSO-12
ICE5AR0680AG 800 V, 42 W, 710 mΩ, PG-DSO-12
5
th
generation PWM controllers
and CoolMOS™ P7
ICE5QSAG and IPP80R360P7 800 V, 360 mΩ, TO-220
ICE5QSAG and IPA95R450P7 950 V, 450 mΩ , TO-220 FP
CoolMOS™ HV SJ MOSFETs IPN95R1K2P7 950 V, 450 mΩ, SOT-223
IPN80R1K4P7 800 V, 1.4 Ω, SOT-223
DC-DC power conversion Low power LDOs IFX30081
50 mA ultralow quiescent current linear voltage regulator with wide
input voltage range
IFX54211
150 mA LDO in tiny package
IFX54441
300 mA low noise LDO
IFX25001
400 mA wide input voltage LDO
Buck converter IFX91041
1.9 A DC-DC buck converter
Safety PMIC for AURIX™ MCU TLF35584
Multichannel power supply IC, optimized for AURIX™ MCU,
up to ASIL-D rated
Product category Product family Product Additional information
CAN transceiver Industrial grade transceiver IFX1050G High speed CAN with 1Mbps, certified to ISO11898-2
IFX1051G * High speed CAN with 2Mbps, certified to ISO11898-2
Automotive transceiver TLE9250SJ Automotive grade high speed CAN FD transceiver with 5 Mbps,
certified to ISO11898-5
TLE9250LE Automotive grade high speed CAN FD transceiver with 5 Mbps,
certified to ISO1189- 5 in tiny SMD package
Authentication and encryption
As embedded systems are increasingly becoming targets of attackers, Infineon oers OPTIGA™ - a turnkey security solution.
Internal power supply
Communication
Product category Product family Product Additional information
Microcontroller XMC™ XMC1400 family (PFC stage) Arm® Cortex® M0 based microcontroller
XMC4500/XMC4700
(HV DC-DC/PWM stage)
Arm® Cortex® M4F based microcontroller
AURIX™ TC26X/TC27X
TC36X/TC37X
TriCore™ AURIX™ 32-bit microcontroller
HSM (hardware secure module) full EVITA compliance
Product category Product family Product Additional information
Magnetic current sensor XENSIV™ TLI4971-A120T5-E0001
TLI4971-A120T5-U-E0001 UL certified
Microcontroller
Current sensor
E-mobility
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
78
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E-mobility
To recharge the battery of an electric or hybrid car, a charger is needed. Chargers can be implemented onboard or
o-board the vehicle. Electric energy is transferred to the vehicle by wire or by wireless methods like resonant inductive
power transfer. Power units onboard the vehicle require automotive-grade components, while the wider product
selection of industrial-grade components can be used for o-board units.
Onboard chargers
In cars with onboard chargers the batteries can be recharged from any standard AC power outlet, which provides
maximum power of 6.6 kW best case (single-phase 230 V/32 A) or 22 kW (three-phase input grid). System designers face
the challenge of supporting the varied voltage and current levels while increasing the power density. When it comes to
on-board charging, the key success factors involve eiciency and a high power density for a small form factor. The long-
term trend is moving towards bi-directional charging, where the charger also feeds power from the car to the smart grid.
O-board chargers
The o-board chargers ensure the proper energy flow from AC grid and HV battery charging electronics. While AC
charger delivers only limited power of up to 22kW and thus longer charging time, DC charger will enable much faster
battery fill with higher power levels. Infineon provides various solutions that reduce power losses, maximizing power
savings and boosting performance.
Ultrafast chargers with power ratings of 50 kW and above are usually build with power stack of 20-30 kW for modularity.
Oen, bidirectional operation of power conversion stage is a requirement for enabling the charger for V2G operation.
AC-DC battery chargers: functional blocks
E-mobility
Best solutions for battery chargers, wireless charging and battery
management
*For o-board chargers only
RFI
filter PFC DC-DC
converter
RFI
filter PFC DC-DC
converter
RFI
filter PFC DC-DC
converter
Power
(grid)
Auxiliary
power
supply
Control + display
Isolation
Battery
management
L1
L2
L3
N
L1
L2
L3
I/V measurement
Single-phase charger
Microcontroller
power supply
32-bit
microcontroller
TC23xL
TC26xD
XMC1000*
XMC4000*
Isolated current
sensor
Transceiver
Gate driver ICs
Microcontroller
Input
Protection
EMI Filter
AC inputPFC stagePFC output
Driver ICs
Driver ICs
Driver ICs
Microcontroller
Driver
Input
Protection
and
EMI Filter
High
Voltage
Battery
Driver
Driver
Digital Isolation
Microcontroller
Driver
Input
Pr
otection
and
EMI Filter
High
Voltage
Battery
Driver
Driver
Digital Isolation
Microcontroller
www.infineon.com/emobility
Driver ICs
High
voltage
battery
Digital isolation
Driver ICs
Microcontroller
PFC stage output Full-bridge converterPWM stage – secondary rectification
Driver ICs
79
For more details on the product,
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E-mobility
Product portfolio for onboard and o-board charger applications
Infineon’s comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, etc.) lends itself
perfectly to designs of compact units for onboard, o-board, and wireless charging. Our products in this sector support high
switching frequencies at lowest possible on-state resistance (RDS(on)) to enable compact and eicient designs: MOSFETs such
as CoolMOS™, IGBTs such as TRENCHSTOP™ 5 and SiC Schottky diodes, such as 650V CoolSiC™ diode. In addition, integrated
MOSFET and IGBT drivers, controller ICs for active CCM PFC high-performance microcontroller solutions and highly accurate
current sensors complete our product portfolio. For more information about o-board chargers, refer to page 74 - Fast EV charging.
Part number Product family Description
IPx65RxxxCFDA CoolMOS™ 650 V 650 V MOSFET with integrated fast body diode
AIKW50N, AIKW40N, AIGW40 TRENCHSTOP™ 5 AUTO IGBT IGBT discrete dedicated to automotive applications
AIMW120Rx * CoolSiC™ 1200 V Automotive 1200 V discrete SiC MOSFET
AUIRS2191S, AUIRS2113S Level shier Automotive high and low side driver
2ED020I12FA Automotive EiceDRIVER™ Dual-channel isolated driver for 650 V/1200 V IGBTs and MOSFETs
TC23xL,TC26xD AURIX™ microcontroller 32-bit lockstep microcontroller
TLF35584 OPTIREG™ PMIC ISO26262 – system-supply optimized for AURIX™
TLE9250 , TLE9251 CAN FD transceiver High-speed automotive CAN transceiver with 5Mbps
TLE9461, TLE9471 Automotive system basic chips High integrated solution for microcontroller supply and communication
TLS810, TLS850, TLS105 OPTIREG™ Linear Automotive linear voltage regulators
TLI4971 XENSIV™ current sensor Coreless magnetic current sensors
Part number Product family Description
IKWxxN65F5/H5/EH5, IKZxxN65EH5 TRENCHSTOP™ 5 IGBTs 650 V ultrafast/fast IGBT with Rapid 1 diode
IGWxxN65F5/H5, IGZxxN65H5 TRENCHSTOP™ 5 IGBTs 650 V ultrafast/fast IGBT
IDWxxG65/120C5(B
3)
) CoolSiC™ diodes 650 V/1200 V SiC Schottky diode generation 5
IDWDxxG120C5 CoolSiC™ diodes 1200 V SiC Schottky diode generation 5 TO-247 2-pin
IMW/Z120RxxxM1H CoolSiC™ MOSFETs 1200 V SiC MOSFETs
IPW65RxxxC7 CoolMOS™ SJ MOSFETs 650 V MOSFET, CoolMOS™ C7 series for hard switching topologies
IPW60RxxxP7 CoolMOS™ SJ MOSFETs 600 V MOSFET, CoolMOS™ P7 series for hard switching topologies
IPW65RxxxCFD CoolMOS™ SJ MOSFETs 650 V MOSFET, CoolMOS™ CFD2 series for so switching topologies
IPW60RxxxCFD7 CoolMOS™ SJ MOSFETs 600 V MOSFET, CoolMOS™ CFD7 series for so switching topologies
HybridPACK™1 Power module 1200 V/200 A for fast and ultrafast charging (>10 kW/phase)
XMC1000
2)
, XMC4000
2)
XMC™ microcontrollers 32-bit Arm® Cortex® M0/M4F microcontrollers, up to 125ºC ambient temperature (XMC4000)
IFX1763, IFX54441, IFX54211 Linear voltage regulators Linear voltage regulator family with output current capability of 500 mA/300 mA/150 mA respectively
IFX1050, IFX1021 * Transceivers High-speed CAN transceiver/LIN transceiver
TLI4970 Current sensor 600 V functional isolation, ± 50 A
2EDNxxxxF/R EiceDRIVER™ 2EDN gate driver ICs Dual-channel, low-side, non-isolated
1EDxxxI12AF/MF, 1ED31xxMU12H EiceDRIVER™ 1ED Compact gate driver 1200 V, single-channel, isolated driver with Miller clamp or separate output
1ED-F2, 2ED-F2, 1ED34x1MU12M EiceDRIVER™ Enhanced 1200 V, single-channel, galvanic isolated driver with DESAT, Miller clamp, So-o
2ED24427N01F * EiceDRIVER™ low side gate driver 10 A dual low side gate driver with DSO-8 thermal pad package
IR2214SS, 2ED21xxS06F EiceDRIVER™ level shi gate driver 1200 V/650 V half-bridge gate driver for IGBTs and MOSFETs
1) in development
2) for external chargers
3) „B“ in product name refers to common-cathode configuration
* For more information on the product, contact our product support
Wireless charging
Wireless methods for power transfer to charge the batteries of electric vehicles are gaining attention. Several concepts
for wireless power transfer systems have been proposed, which in general seek to compensate the significant stray
inductances on primary and secondary sides of the magnetic couplers by adaptive resonant methods. At the end of 2013,
SAE announced a new standard for inductive charging which defined three power levels at 85 kHz. Infineon’s CoolMOS ™
CFD7, C7, and P7 series along with TRENCHSTOP™ 5 IGBTs, CoolSiC™ diodes, and EiceDRIVER™ gate driver ICs are perfectly
suited for driving inductive power transfer systems on the road side which operate inside the 80 to 90 kHz band.
Power
(grid)
50/60 Hz
High voltage
battery
~+
-
+
-
+
-
Road side Car side
M
~~
Inverter
Resonance
loops
PFC
AC-DC
Receiver
Resonance
loops
Rectifier
Battery
management
85 kHz
High
voltage
switch
Microcontroller
High
voltage
switch
Gate driver ICsGate driver ICs
Microcontroller
www.infineon.com/emobility
Automotive products for on-board units
Industrial products for o-board units
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
80
For more details on the product,
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E-mobility
Charger concepts without galvanic isolation of the power stages
Transformerless designs, without galvanic isolation inside the power stages, are economic and eicient. But enhanced
safety measures may be required to operate such designs from standard AC-grid power outlets. Type-B RCD (GFCI)
safety switches are needed on the grid side to immediately break the circuit in case an unintended feedback of
DC-voltage from the HV-battery into the AC-grid occurs under worst-case failure conditions, but type-B safety switches
on the grid side are not standard by today. The main reason why non-isolated designs are currently not accepted for
onboard chargers is because the level of safety measures on the grid side of the charging spot is uncertain. However,
inside an o-board charger installation with an integrated type-B safety switch, the use of non-isolated concepts may
be indicated. To highlight their opportunities, Infineon has investigated non-isolated concepts, built and evaluated
laboratory demonstrators of single-phase 3 kW chargers without galvanic isolation inside the power stages.
Part number Product family Description
ICE3PCS01G Integrated controller For active CCM PFC, DSO 14-pin
IPW65R019C7 CoolMOS™ C7 SJ MOSFET 650V MOSFET, 19 mΩ, TO-247
IKW40N65H5 TRENCHSTOP™ 5 IGBT 650 V fast IGBT with Rapid 1 diode, 40 A, TO-247
IKW50N65EH5 TRENCHSTOP™ 5 IGBT 650 V fast IGBT with Rapid 1 diode, 50 A, TO-247
IDW30G65C5 CoolSiC™ diode 650V SiC Schottky diode generation 5, 30 A, TO-247
TLI4970 Current sensor 600V functional isolation, ± 50 A
1EDxxxI12AF/MF, 1ED31xxMU12H EiceDRIVER™ 1ED Compact gate driver 1200 V, single-channel, isolated driver with Miller clamp or separate output
2ED24427N01F * EiceDRIVER™ low side gate driver 10 A dual low-side gate driver with DSO-8 thermal pad package
Part number Product family Description
1ED020I12FA2 Automotive EiceDRIVER™ Single-channel isolated driver for 650V/1200V IGBTs and MOSFETs
1ED020I12FTA Automotive EiceDRIVER™ Single-channel isolated driver, two-level turn-o for 650V/1200V IGBTs
2ED020I12FA Automotive EiceDRIVER™ Dual-channel isolated driver for 650V/1200V IGBTs and MOSFETs
IPx65RxxxCFDA CoolMOS™ 650V MOSFET with integrated fast body diode
TC23xL, TC26xD AURIX™ 32-bit lockstep microcontroller
TLF35584 1) OPTIREG™ PMIC ISO26262 – system-supply optimized for AURIX™
TLE9250, TLE9251 CAN FD transceiver High-speed automotive CAN transceiver with 5 Mbps
TLE9461, TLE9471 Automotive system basic chips High integrated solution for microcontroller supply and communication
TLS810, TLS850, TLS105 OPTIREG™ Linear Automotive linear voltage regulators
RCD
(GFCI)
type B
AC-DC
PFC w/o
galvanic
isolation
DC-DC
buck
Power
(grid) ~
+
-
N
+
-
L1
To EV‘s DC
charging socket
High
voltage
switch
Gate driver ICs
Microcontroller
1) In development
2) Automotive version under consideration
3) More detailed information about this demonstrator
is available upon request
* For more information on the product, contact our product support
* * Available in dierent current ratings
Concept demonstrator 3) of lean and eicient o-board
DC-charger without galvanic isolation
› Input 230V/50 Hz single-phase AC
› Output 220V-390VDC, max. power 3.3 kW at 350V with
96.2 percent eiciency
Part number Product family Description
IPW60R031CFD7 CoolMOS™ CFD7 SJ MOSFET 600 V MOSFET, 31 mΩ, TO-247
IPW60R040C7 CoolMOS™ C7 SJ MOSFET 600 V MOSFET, 40 mΩ, TO-247
IPW60R037P7 CoolMOS™ P7 SJ MOSFET 600 V MOSFET, 37 mΩ, TO-247
IKW40N65F5 TRENCHSTOP™ 5 IGBTs Fast IGBT with Rapid 1 diode, 40 A, TO-247
IGW40N65F5 TRENCHSTOP™ 5 IGBTs Fast IGBT, single, 40 A, TO-247
IDW40G65C5 CoolSiC™ diode 650V SiC Schottky diode generation 5, 40 A, TO-247
2)
XMC4000 XMC™ microcontroller 32-bit Arm® Cortex® -M4F microcontrollers, up to 125 ºC ambient temperature
IFX1763, IFX54441 Linear voltage regulators Linear voltage regulator family with output current capability of 500 mA or 300 mA respectively
TLI4970 Current sensor 600V functional isolation, ± 50 A
2ED21xxS06F EiceDRIVER™ SOI gate driver 650 V half-bridge gate driver for IGBTs and MOSFETs
1EDxxxI12AF/MF, 1ED31xxMU12H EiceDRIVER™ 1ED Compact gate driver IC 1200 V, single-channel, isolated driver with Miller clamp or separate output
www.infineon.com/emobility
Automotive products for the car side * *
Industrial products for the road side * *
Industrial products for the road side
81
For more details on the product,
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E-mobility
Best solution for battery management
An intelligent battery management system (BMS) is necessary to sustain battery performance throughout its entire lifetime
– the challenge there is to tune the utilization of each battery cell individually. Passive cell balancing is the default approach
where the weakest of the cells sets the limits for battery lifetime and cruising range. Infineon’s microcontrollers and sensors,
in combination with our power devices, enable active cell balancing while charging and discharging. An active cell balancing
system helps to increase the eective cruising range and the battery lifetime by 5 to 10 percent, compared to passive
balancing. In this context, highlights are our 8-bit XC886CM microcontroller family for the slave blocks and the new 32-bit
AURIX™ microcontroller family for the master block, OptiMOS™ low voltage MOSFETs, automotive CAN transceivers TLE9250,
TLE9251, as well as brand new OPTIREG™ PMIC TLF35584 to enable safety level up-to ASIL-D.
Part number Description
TC23xL, TC26xD 32-bit AURIX™ lockstep microcontrollers
TLF35584 ISO26262 – system-supply optimized for AURIX™
TLE9250, TLE9251 High-speed automotive CAN transceiver with 5 Mbps
TLE9461, TLE9471 High integrated Solution for Microcontroller supply and communication
Part number Description
XC886CM 8051-compatible 8-bit automotive microcontroller
TLF35584 ISO26262 – system-supply optimized for AURIX™
TLE9250, TLE9251 High-speed automotive CAN transceiver with 5 Mbps
TLE9461, TLE9471 High integrated Solution for Microcontroller supply and communication
IPG20N04S4L OptiMOS™-T2 power transistor, logic level, dual, 40V/8.2 mW
IPD70N03S4L OptiMOS™-T2 power transistor, logic level, 30V/4.3 mW
IPD70N10S3L OptiMOS™-T2 power transistor, logic level, 100V/11.5 mW
Part number Product family Description
IPx65RxxxCFDA CoolMOS™ CFDA 650 V SJ MOSFET with integrated fast body diode
Main switch
650 V CoolMOS™
Battery master
32-bit microcontroller
TC23xL/TC26xD
TLF35584
HS-CAN transceiver
TLE7250G
Private CAN
Public CAN
150 V-400 V
+
-
Battery block slave
8-bit µC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
Battery block slave
8-bit uC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
Battery block slave
8-bit µC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
High
voltage
switch
Gate driver ICs
Microcontroller
www.infineon.com/emobility
Main switch
Battery master
Battery slave
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
82
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Light electric vehicles and forkli
e-Bike, e-Scooter, e-Rickshaw, LSEV, e-forkli
Light electric vehicles (LEV) are viable options for daily commute. Started with Asia, now moving towards Europe and
Americas, the increasingly wide spread of e-kick scooter, e-bike, e-scooter, e-motorcycle, e-rickshaw, as well as low
speed electric vehicles, also referred to as neighborhood EV (NEV) are spotted all around the world. Electrification
with lithium batteries gives hardware overhaul to some of the existing designs built with lead-acid batteries. With the
state-of-art battery technology, LEV manufacturers are launching premium vehicles requiring technologies that enable
longer distance per charge, fast charge in various speed class up to 100 km/hr.
On the other hand, electric forklis (class I, II, and III) li loads up to 10 tones while maintaining 4.83 kilometers per
hour on 20° incline for 2 minutes. The faster the LEV and the higher load a LSEV or forkli has to carry, the stronger the
motor and the motor controller has to be. This requires multiple best-in-class, MOSFETs with lowest on-resistance
gathering together in parallel to generate suicient power.
Infineon’s industrial grade OptiMOS™ and StrongIRFET™ MOSFETs product families consider light electric vehicles
mission profile within its qualification process. They provide industry-leading on-resistance as well as robustness
against critical conditions (short circuit conditions, hard commutation ruggedness, and instantaneous peak power
tolerance). Both product families come with a broad range of voltage classes spreading from 25 V to 300 V with
multiple RDS(on) classes to choose from. OptiMOS™ devices are designed for best performance in paralleling operation
while StrongIRFET™ devices have great mix between performance and robustness.
Application diagram
Infineon oering and customer benefits
Infineon oering
Lowest on-resistance RDS(on)
Lowest power consumption during operation
Track record of reliability and quality
Complete portfolio
Complete design support with simulations, documentation and demonstration
boards for high end solution available
Customer benefits
Highest power density and BOM cost reduction
Increased battery operating time
Prolonged lifetime
Enabled scalability
Shortened development cycle
Interface
I/O f(x)
Drive
rS
ensor
Power management
M
Safety & security
Micro-
controller
www.infineon.com/lev
Light electric vehicle and forkli
83
For more details on the product,
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Highlight/ recommended product portfolio – electric bike and electric kick scooter
Highlight/ recommended product portfolio – electric scooter, LSEV and forkli
www.infineon.com/lev
Functional block Product category Product family Part number
Motor control MOSFETs OptiMOS™ power MOSFET 60 V IPT007N06N
BSC039N06NS
HEXFET™ power MOSFET 60 V IRFS3006TRL7PP
IRFH7545TRPBF
HEXFET™ power MOSFET 75 V IRFB3607PBF
OptiMOS™ 5 power MOSFET 80 V IPT029N08N5
IPP052N08N5
OptiMOS™ 5 power MOSFET 100 V IPT015N10N5
IPB017N10N5
OptiMOS™ 3 power MOSFET 100 V IPB042N10N3
OptiMOS™ 5 power MOSFET 150 V IPB048N15N5
HEXFET™ power MOSFET 200 V IRFP4668PBF
Gate driver ICs EiceDRIVER™ 650 V half-bridge SOI gate driver IC with integrated bootstrap diode 2ED2106S06F
2ED2182S06F
EiceDRIVER™ 200 V three-phase SOI driver IC with integrated bootstrap diode 6EDL04N02PR
EiceDRIVER™ 200 V half-bridge gate driver IC IRS2005/7/8M, IRS2011S
EiceDRIVER™ single-channel gate driver IC 1EDN7550
Voltage regulator Monolithic integrated voltage regulator IFX21004TN
Sensors XENSIV™ integrated Hall eect switch TLE4964-1M
XENSIV™ 3D magnetic sensor TLE493DW2B6Ax
Motor control IC iMOTION™ digital motor controller IMC101T-F064
Microcontrollers 3-Phase Bridge Driver IC with Integrated Arm® Cortex® M3 TLE9877QXW40
XMC1400 series XMC1404-F064X0200
Battery management MOSFETs OptiMOS™ 5 100 V IPT015N10N5
OptiMOS™ 3 100 V IPT020N10N3
Safety and security Security chip OPTIGA™ Trust B SLE 95250
Functional block Product category Product family Part number
Motor control MOSFETs OptiMOS™ 5 power MOSFET 80 V IPT012N08N5
OptiMOS™ 3 power MOSFET 80 V IPB019N08N3 G
OptiMOS™ 5 power MOSFET 100 V IPT015N10N5
IPB027N10N5
IPP051N15N5
HEXFET™ power MOSFET 100 V IRFB4110
OptiMOS™ 5 power MOSFET 150 V IPB044N15N5
OptiMOS™ Fast Diode (FD) power MOSFET 200 V IPB156N22NFD
OptiMOS™ 3 power MOSFET 200 V IPB107N20N3 G
StrongIRFET™ power MOSFET 200 V IRF200S234
Gate driver ICs EiceDRIVER™ 1ED Compact 1200 V isolated gate driver 1EDI20N12AF
1ED3122MU12H *
EiceDRIVER™ 650 V/600 V, half-bridge/high-side 2ED2106S06F
2ED2182S06F
IRS2127S
EiceDRIVER™ single-channel gate driver IC 1EDN7550
EiceDRIVER™ reinforced isolated gate driver IC 2EDS8265H
2EDS8165H
600V MOSFETs
and IGBTs
600 V CoolMOS™ CFD7 power MOSFET IPW60R018CFD7
600 V DuoPack IGBT (TRENCHSTOP™ Performance) with RAPID 1 fast anti-parallel diode
IKW30N60DTP
600 V DuoPack IGBT with RAPID 1 fast anti-parallel diode IKW50N60DTP
Voltage regulators Monolithically integrated w/ dual output: 5 V and 15 V IFX21004TN V51
OPTIREG™ Tracker TLS115D0EJ
Sensor XENSIV™ integrated Hall eect switch TLE4964-1M
Microcontrollers XC2000 family SAK-XC2365B-40F80LR AB
XMC4300 XMC4300-F100K256
Battery Management MOSFET OptiMOS™ 5 150 V IPB044N15N5
OptiMOS™ 3 150 V IPB059N15N3 *
Safety & Security Security chip OPTIGA™ Trust B SLE 95250
Air-conditioning MOSFETs HEXFET™ power MOSFET 200 V IRFP4668PBF
StrongIRFET™ power MOSFET 200 V IRF200P222
Gate driver IC 600 V three phase gate driver IC for IGBTs and MOSFETs 6EDL04I06PT
Light electric vehicle and forkli
* For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
84
Multicopter
For more details on the product,
click on the part number.
Multicopter
Reliable and cost-eective solutions to support future design trends
Infineon’s comprehensive portfolio of high quality products allows designers to rapidly design, develop, and
deploy systems that address the ever more demanding needs of today’s customers. We oer a near system
solution – everything from XMC™ microcontrollers, to iMOTION™ motor control ICs, to magnetic sensors and
many other cutting-edge technologies – with the exception of one commodity, an IMU (inertial measurement
unit) for existing solutions. In the very fast growing multicopter market, energy eiciency and reliability are
becoming more important. Camera applications, autonomous flying and sophisticated onboard equipment
are pushing the limits of power management and reliability. With increased adoption comes increased
regulation and the multicopter itself needs to be capable of being piloted in a safe and well-controlled
manner. Being a recognized leader in automotive and industrial power electronic systems, Infineon oers
high quality system solutions for the next generation of multicopters and enables customers to achieve a
higher degree of innovation and dierentiation.
Overview of the main electronic subsystems of a typical multicopter design
Multicopter
Key featurs
Development eort and cost reduction
Authentication
Ease-of-precision control for flight and data
Longer flight times
Collision avoidance
Altitude stabilization
Broader portfolio
Fast time-to-market
Key benefits
With no or little experience in motor control, customers can implement the iMOTION™ motor control IC and take flight
Project development can be reduced up to 30 percent by using reference designs and the DAVE™ platform for
microcontroller programming
Infineon’s solutions enable authentication of components connected to the system
Guaranteed safety and protection of the product, avoiding liability
Through the benefits of multifunction sensors, the user can experience an easy, stable, smooth and accurate
control of the multicopter
Closed loop control of gimbal motor, sensors enhanced camera stability and data transmission when
recording video
The highly eicient components and eective flight control can make the multicopter lighter, which results in
longer flight time
XENSIV™ 24 GHz radar sensors have the capability of detecting the proximity of objects such as trees,
buildings, etc.
The miniaturized digital barometric air pressure sensors based on capacitive technology guarantee high
precision during temperature changes
Infineon can provide all the necessary critical semiconductor components for multicopters
A complete eco-system of simulations, documentation and demoboard solutions enables a faster time-to-market
www.infineon.com/multicopter
Current sensing
Gate driver
3-phase
inverter
XMC4000
microcontroller
and
digital control ICs
M
Power management
Battery
management
Authentication
LED
Gimbal
XMC1400
microcontroller
Video camera
Silicon microphones
CAN
USB
ESD
2.4/5.0 GHz
Wireless
LTE/GPS
24 GHz
Radar sensor
Pressure Sensor
Authentication
& remote control
M
Security
Inertial measurement unit
(IMU)
3-axis gyroscope
3-axis accelerometer
3-axis magnetometer
DC-DC
LDO
Electronic speed
controller
IRMCK099 / XMC1300
microcontroller
Yaw
Motor control
M
I2C/SPI
Position sensor
Position sensor
Roll
motor control
Pitch
motor control
Position sensor
M
Application processor
and wireless Interface
e.g. Raspberry PI Zero
I2C/SPI
Features and benefits
85
For more details on the product,
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www.infineon.com/multicopter
Flight control ESC
Microcontroller Sensor DC-DC module LDO Low noise
amplifer(LNA) SensorMicrocontroller Intelligent power
module
› XMC4000 family
› XMC1000 family
› AURIX™
› XENSIV™ pressure
sensor: DPS310
› XENSIV™ 24 GHz
radar sensor:
BGT24MR
› Current sensor:
TLI4970
› IFX90121ELV50
› IFX91041EJV33
› IFX91041EJV50
› IFX1117ME
› IFX54441EJV
› IFX1763XEJV33
› LTE: BGA7H,
BGA7M, BGA7L
› GPS: BGA524N6,
BGA824N6
› Wi-Fi: BFP842ESD,
BFR840L3RHESD,
BFR843L3 * *, etc.
› Hall sensor:
TLI4961, TLV4961
› Angle sensor:
TLI5012B, TLE5009
Security Accessory
authentication Joystick Interface
protection diode LED driver Dual n-channel
power MOSFETs
MOSFET gate
driver
Low voltage
MOSFETs
› OPTIGA™ Trust E
SLS 32AIA
› OPTIGA™ Trust P
SLJ 52ACA * *
› OPTIGA™ TPM
SLB 96XX
› OPTIGA™ Trust
SLS 10ERE * *
› OPTIGA™ Trust B
SLE 95250
› OPTIGA™ Trust X
SLS 32AIA
› 3D magnetic
sensor: TLV493D
› ESD102 series › BCR450
› BCR321U
› BCR421U
› IR3742 * *, etc.
› BSC0925ND, etc.
› XMC1300 family
› iMOTION™
IRMCK099
› ePOWER: TLE987x
› IRSM005-800MH
› IRSM836-084MA
› IRS2301S
› 6EDL04N02P
› IRS23365
› PX3517
› OptiMOS™ 5 series
› StrongIRFET™ series
Gimbal control
Microcontrollers Angle sensor LDO CAN transceiver Low voltage
MOSFETs
Dual n-channel
power MOSFETs MOSFET gate driver
› XMC1400 family › TLI5012B
› TLE5009
› IFX1117ME
› IFX54441EJV
› IFX1763XEJV33
› HS CAN IFX1050G * *
› IFX1050GVIO
› OptiMOS™ 5 25-30 V
› StrongIRFET™ 25-30 V
› IRFHM8363TRPBF, etc. › IR2101STRPBF, etc.
Charger Battery management
High voltage MOSFETs Low voltage MOSFETs Stand alone
PWM controller Authentication ICs Cell balancing Low voltage MOSFETs
› 600 V CoolMOS™ P7 * › OptiMOS™ 5 40-80 V
in TO-220, SuperSO8
› StrongIRFET™ 40-75 V
› ICE2QS03G › OptiMOS™ 30 V in SSO8,
S308, DirectFET™
› StrongIRFET™ 30 V
› OPTIGA™ Trust B SLE 95250
› OptiMOS™ 5 in SuperSO8,
S3O8, DirectFET™
› StrongIRFET™ 40-80 V
Solution tree for multicopters
* If the necessary package/RDS(on) combination is not available in the new CoolMOS™ P7 series yet,
the previous CoolMOS™ CE and P6 series are the preferred series
* *For more information on the product, contact our product suppor
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
86
20-300 V MOSFETs
For more details on the product,
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› 20-300 V MOSFETs N-channel power MOSFETs
technology development and product
family positioning
› Guidance for applications and voltage classes
› Space-saving and high performance packages
› Discrete and integrated packages
› OptiMOS™ Source-Down power MOSFETs 25-150 V
› OptiMOS™ Linear FET
› OptiMOS™ 6 power MOSFETs 40 V
› Small signal/small power MOSFETs 250-600 V
› Product portfolio
› Nomenclature
20-300 V MOSFETs
87
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
88
For more details on the product,
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OptiMOS™ and StrongIRFET™
20-300 V N-channel power MOSFETs
Infineon’s semiconductors are designed to bring greater eiciency, power density and cost-eectiveness. The full range
of OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as switch
mode power supplies (SMPS), battery powered applications, motor control and drives, inverters, and computing.
Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and
performance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and
figure of merit (FOM).
OptiMOS™ power MOSFETs provide best-in-class performance. Features include ultralow RDS(on), as well as low charge
for high switching frequency applications. StrongIRFET™ power MOSFETs are designed for drives applications and are
ideal for designs with a low switching frequency, as well as those that require a high current carrying capability.
OptiMOS™ and StrongIRFET™
www.infineon.com/powermosfet-12V-300V
Technology development and product family positioning
IR MOSFET
20-300 V
StrongIRFET™ Gen. 1
20-300 V
IR MOSFET
100-300 V
OptiMOS™
25/30/40/60 V
OptiMOS™ 3
80/100/150 V
OptiMOS™ 6
40 V
OptiMOS™ 5
25/30/40/60 V
OptiMOS™ 3
75/120 V
OptiMOS™ 5
80/100/150 V
OptiMOS™ 3
200/250/300 V
Active
(Price/performance optimized) (High performance optimized)
Active and preferred Active
(Price/performance optimized) (High performance optimized)
Active and preferred
StrongIRFET™ OptiMOS™
Robust and excellent price/performance ratio
› Optimized for switching frequency < 100 kHz
› Designed for industrial applications
› High current carrying capability
› Rugged silicon
Best-in-class technology
› Optimized for broad switching frequency
› Designed for high performance applications
› Industry's best figure of merit
› High eiciency and power density
89
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www.infineon.com/powermosfet-12V-300V
Infineon's power MOSFET 20-300 V product portfolio is divided into „active and preferred“, referring to the latest
technology available oering best-in-class performance, and „active“, consisting of well-established technologies
which complete this broad portfolio.
OptiMOS™ 6 power MOSFETs 40 V are the newest addition to the OptiMOS™ product family available either in SuperSO8
or PQFN 3.3 x 3.3 packages. This technology is the perfect solution when best-in-class (BiC) products and high
eiciency over a wide range of output power are required. For other voltage classes, from 25 V up to 150 V, OptiMOS™ 5
represents the latest generation in the market, oering either best-in-class (BiC) or price/performance solutions.
For high frequency applications, the product portfolio is complemented by OptiMOS™ 3 power MOSFETs 40/60 V
as standard components. The „active and preferred“ OptiMOS™ 3 power MOSFETs 75/120 V, as well as 200/250/300 V
is the best fit portfolio either in low- or high-frequency applications with a range of products covering from BiC
to standard parts.
StrongIRFET™ Gen. 1 is recommended for 20-300 V applications when the the BiC performance is not essential and the
cost is a more significant consideration.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
90
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OptiMOS™ and StrongIRFET™
Guidance for applications and voltage classes
OptiMOS™ and StrongIRFET™ portfolio, covering 20 up to 300 V MOSFETs, can address a broad range of needs from
low- to high-switching frequencies. The tables below provide a guidance on the recommended OptiMOS™ or
StrongIRFET™ products for each major sub-application and voltage class.
StrongIRFET™ available
OptiMOS™ recommended
OptiMOS™ available
StrongIRFET™ recommended
www.infineon.com/powermosfet-12V-300V
Low power
Power tools, Mul-
ticopter, Battery,
Industrial Drives
OptiMOS™
OptiMOS™
StrongIRFET™
StrongIRFET™
High power
(LEV, LSEV)
Battery powered
Solar
Oline UPS
slow switching
fast switching
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
Online UPS
Inverters
Adapter /
Charger
PC Power
LCD TV
Server
AC-DC
Telecom
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
SMPS
Recommended voltage 20 V
to 30 V 40 V 60 V 75 V
to 80 V 100 V 135 V
to 150 V 200 V 250 V 300 V
91
For more details on the product,
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OptiMOS™ and StrongIRFET™
www.infineon.com/powermosfet-12V-300V
Space-saving and high performance packages
TO-247 TO-220 TO-220 FullPAK D2PAK D2PAK 7-pin TO-Leadless
Optimized for high power applications and high current capability
Height [mm] 5.0 4.4 4.5 4.4 4.4 2.3
Outline [mm] 40.15 x 15.9 29.5 x 10.0 29.5 x 10.0 15.0 x 10.0 15.0 x 10.0 11.68 x 9.9
Thermal resistance RthJC [K/W] 2.0 0.5 2.5 0.5 0.5 0.4
SuperSO8 Power Block PQFN 3.3 x 3.3
Source-Down
PQFN 3.3 x 3.3 PQFN 2 x 2 DirectFET™
For highest
eiciency
and power
management
Significant design
shrink
High power density
and performance
For highest
eiciency
and power
management
Enables significant
space saving
Best thermal
behavior in a tiny
footprint
Height [mm]
1.0 1.0 1.0 1.0 0.9 Small: 0.65
Medium: 0.65
Large: 0.71
Outline [mm]
5.15 x 6.15 5.0 x 6.0 3.3 x 3.3 3.3 x 3.3 2.0 x 2.0 Small: 4.8 x 3.8
Medium: 6.3 x 4.9
Large: 9.1 x 6.98
Thermal resistance RthJC [K/W] 0.8 1.5 1.4 3.2 11.1 0.5
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
92
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OptiMOS™ and StrongIRFET™
Discrete and integrated packages
OptiMOS™ and StrongIRFET™ technologies are available in dierent packages to address demands for higher current
carrying capability and significant space saving. The broad portfolio enables footprint reduction, boosted current
rating and optimized thermal performance. While the surface mound leadless devices are enabled for footprint
reduction, through-hole packages are characterized by a high power rating. Furthermore, Infineon oers innovative
packages such as DirectFET™ and TO-Leadless. DirectFET™ is designed for high frequency applications by oering the
lowest parasitic resistance. This package is available in three dierent sizes: small, medium and large. TO-Leadless is
optimized to dissipate power up to 375 W, increasing power density with a substantial reduction in footprint.
10000
1000
100
0
0 100 200 300 400 500
600
Power Dissipation [W]
Outline [mm2]
PQFN 2x2
PQFN 3.3x3.3 PQFN 3.3x3.3 Source Down
DirectFET™ S-Can
DirectFET™ M-Can
DirectFET™ L-Can
SuperSO8
sTOLL
TOLL
I2PAK
TO-220 TO-220 FullPAK
TO-247
D2PAKD
2PAK 7-pin
DPAK
SuperCool
www.infineon.com/powermosfet-12V-300V
93
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Source-Down PQFN 3.3 x 3.3
In the Source-Down concept, the heat is dissipated directly
into the PCB through a thermal pad instead of over the
bond wire or the copper clip (Figure 3).
› Significantly improves the thermal resistance (RthJC) of
this product family
› In most cases, thermal vias cannot be used on the thermal
pad if it is connected to the noisy switch node potential
› With Source-Down, the thermal pad of the low-side MOSFET
is now on the ground potential enabling the use of thermal
vias right underneath the device
› Considerably improves the thermal performance and the
power density in the end application
Drain-Down
PQFN 3.3 x 3.3 mm
Source-Down
PQFN 3.3 x 3.3 mm
www.infineon.com/PQFN-3-source-down
OptiMOS™ Source-Down power MOSFETs 25-150 V
An innovative PQFN 3.3x3.3 mm product family
Features and benefits
Optimized thermal management
Once again Infineon sets the standard in MOSFET performance with the new Source-Down package supporting the
requirement for high power density and optimized system level eiciency. In contrast to a Drain-Down device, in
Source-Down technology, we connect the source potential to the thermal pad (Figure 1). We go even further with the
Source-Down Center-Gate footprint. Here the gate-pin is moved to the center supporting easy parallel configuration of
multiple MOSFETs. With the larger drain-to-source creepage distance, the gates of multiple devices can be connected
on a single PCB layer (Figure 2).
Key benefits
High current capability
More eicient use of real estate
High power density and performance
Optimized footprint for MOSFET parallelization with center gate
System cost reduction
Key features
Major reduction in RDS(ON) , up to 30% due to larger silicon die in same package
outline
Superior thermal performance in RthJC
Optimized layout possibilities
Standard-Gate and Center-Gate footprint
MSL1 rated
Standard Drain-Down New Source-Down
PQFN 3.3 x 3.3 mm standard
Drain-Down footprint
PQFN 3.3 x 3.3 mm
Standard-Gate
Source-Down footprint
PQFN 3.3 x 3.3 mm
Center-Gate
Source-Down footprint
RthJC [C/W] 1.8 1.4 1.4
Thermal vias
Thermal vias
Thermal vias
Thermal vias
Drain
0.75 mm
Source
Gate Gate
Source
Drain
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
94
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OptiMOS™ Linear FET
www.infineon.com/optimos-linearfet
OptiMOS™ Linear FET
Combining low on-state resistance (RDS(on)) with wide safe operating area (SOA)
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-o between on-state resistance (RDS(on)) and linear
mode capability operation in the saturation region of an enhanced mode MOSFET. It oers the state-of-the-art RDS(on) of
a trench MOSFET, as well as the wide SOA of a classic planar MOSFET.
This product is the perfect fit for hot swap and e-fuse applications commonly found in telecom and battery
management systems. OptiMOS™ Linear FET prevents damage at the load in case of a short circuit by limiting high
inrush currents.
OptiMOS™ Linear FET is currently available in three voltage classes – 100 V, 150 V, and 200 V – in either D2PAK or
D2PAK 7-pin packages.
SOA comparison
While the OptiMOS™ 5 power MOSFET 100 V, 1.7 mΩ has an SOA of
0.5 A, the OptiMOS™ Linear FET version at the same RDS(on) oers a
much wider SOA of 11.5 A (@ 54 V, 10 ms).
103
102
101
100
10-1
103
102
101
100
10-1
10-1 100 101 102 10310-1 100 101 102 10
3
VDS [V]
I
D
[A]
VDS [V]
ID [A]
1 µs 1 µs
10 µs 10 µs
100 µs 100 µs
1 ms
1 ms
10 ms
10 ms
DC
DC
OptiMOS™ 5
RDS(on) = 1.7 mΩ
OptiMOS™ Linear FET
RDS(on) = 1.7 mΩ
0.5 A @ 54 V
tpulse= 10 ms
11.5 A @ 54 V
tpulse= 10 ms
95
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OptiMOS™ 6
In SMPS applications, OptiMOS™ 6 is the perfect
solution for high eiciency over a wide range of
output power, avoiding the trade-o between low
and high load conditions.
At the low output power range, where switching
losses due to parasitic capacitance in the MOSFET
are dominating, OptiMOS™ 6 power MOSFET
BSC010N04LS6 achieves the same eiciency as
the OptiMOS™ 5 power MOSFET BSC014N04LS at
40% lower RDS(on).
Moreover, compared to the OptiMOS™ 5 power
MOSFET 40 V 1.0 mΩ , the OptiMOS™ 6 generation
achieves lower switching losses at high load with
the same RDS(on). This combination leads to an
overall eiciency optimization in low and high
load operating points.
0
OptiMOS™ 6 power MOSFET BSC010N04LS6
OptiMOS™ 5 power MOSFET BSC010N04LS
OptiMOS™ 5 power MOSFET BSC014N04LS
99.8
99.7
99.6
99.5
99.4
99.3
99.2
99.1
99.0
100 200 300 400 500 600 700 800 900 1000 1100 1200
Output power [W]
Eiciency [%]
www.infineon.com/optimos6
OptiMOS™ 6 power MOSFETs 40 V
Next generation of cutting edge MOSFETs
Infineon’s OptiMOS™ 6 power MOSFET 40 V family oers an optimized solution for synchronous rectification
in switched mode power supplies (SMPS) in servers, desktop PCs, wireless and quick chargers. The improved
performance in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) yields an eiciency
improvement, allowing easier thermal design and less paralleling, leading to system cost reduction. In addition,
the best-in-class RDS(on) makes these devices suitable for ORing circuits.
Infineon’s market-leading OptiMOS™ 6 power MOSFETs 40 V are available
in two dierent packages:
› SuperSO8 – 5 x 6 mm with RDS(on) ranging from 5.9 mΩ down to 0.7 mΩ
› PQFN 3x3 – 3.3 x 3.3 mm with RDS(on) ranging from 6.3 mΩ down to 1.8 mΩ
Features and benefits
OptiMOS™ 6 40 V combines the best-in-class RDS(on)with the superior switching performance
Key benefits
Highest system eiciency and power density
Less paralleling required
Very low voltage overshoot
Reduced need for snubber circuit
System cost reduction
Key features
Compared to alternative products:
› RDS(on) reduced by 30%
› Improved FOM Qg x RDS(on) by 29%
› Improved FOM Qgd x RDS(on) by 46%
Optimized for synchronous rectification
Suited for ORing circuits
RoHS compliant - halogen free
MSL1 rated
Gate drive
Controller
Gate drive
fsw
UT
UGS UGS
Charger
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
96
For more details on the product,
click on the part number.
Small signal/
small power MOSFETs
Small signal/small power MOSFETs 250-600 V
Combining latest high-performance silicon technology with small and
innovative packaging
Small signal/small power products are ideally suited for space-constrained automotive or non-automotive
applications. By combining the latest high-performance silicon technology with small and innovative packaging,
Infineon’s small signal/small power family oers designers more flexibility when it comes to making their power
MOSFET selection. The products can be found in almost all applications e.g. battery protection, battery charging,
LED lighting, load switches, DC-DC converters, level shiers, low voltage drives and many more.
The entire family includes dierent packages:
SOT-223, SOT-23, SOT-323, SOT-363, SOT-89, TSOP-6 and SC59
The product portfolio covers N-channel and P-channel enhancement mode MOSFETs as well as N-channel depletion
mode products:
› 20-250 V P-channel enhancement mode (available in single and dual configurations)
› 20-600 V N-channel enhancement mode (available in single and dual configurations)
› -20/20 V and -30/30 V complementary (P + N channel) enhancement mode
› 60-600 V N-channel depletion mode
Key benefits
Suitable for automotive and high quality demanding applications
Easy interface to MCU
Reduction of design complexity
Wide selection of products available
Industry standard small outline packages
Environmentally friendly
Key features
Most products qualified to AEC Q101
Four VGS(th) classes available for 1.8V, 2.5V, 4.5V, and 10V gate drives
ESD protected p-channel parts
VDS range from -250 V to 600V
RoHS compliant and halogen free
www.infineon.com/smallsignal
Small signal/small power MOSFETs
are available in seven industry-
standard package types ranging
from the largest SOT-223 to the
smallest SOT-363.
Products are oered in single, dual
and complementary configurations
and are suitable for a wide range
of applications, including battery
protection, LED lighting, low voltage
drives and DC-DC converters.
600
400
250
240
200
150
100
75
60
55
40
30
25
20
12
10 mΩ 100 mΩ 1 Ω 10 Ω 100 Ω 1000
Ω
RDS(on) max. @VGS = 4.5 V [mΩ/Ω]
Voltage class [V] ±
50 mΩ
21 mΩ 3 Ω
3 Ω
20 Ω
15 Ω
600 Ω
1 Ω
90 Ω
10 Ω
41 mΩ
19 mΩ
56 mΩ 112 mΩ
825 mΩ
60 mΩ
180 mΩ
235 mΩ
1.2 Ω
2.2 Ω
7.5 Ω
22 Ω
45 Ω
5 Ω
SOT-363 SOT-323 SOT-23 TSOP-6 SC59 SOT-89 SOT-223
Package outline [mm2]4.2 4.2 6.96 7.25 8.4 18 45.5
97
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
98
For more details on the product,
click on the part number.
Product portfolio
*
Optimized for resonant applications (e.g. LLC converter)
* * Monolithically integrated Schottky-like diode
* * * R
DS(on)
max @ V
GS
=4.5 V
* * * *
For more information on the product, contact our product support
1)
2.5 V
GS
capable
2)
Coming soon
3) Source-Down Center-Gate
OptiMOS™ and StrongIRFET™ 20V (super) logic level
RDS(on) max
@ VGS=10V
[mΩ]
TO-252
(DPAK)
DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SO-8
< 1
IRL6283MTRPBF
RDS(on)=0.65 mΩ
IRFH6200TRPBF
RDS(on)=0.99 mΩ
2-4
IRLHM620TRPBF * * * 1)
RDS(on)=2.5 mΩ
BSC026N02KS G
RDS(on)=2.6 mΩ
IRF6201TRPBF
RDS(on)=2.45 mΩ
IRLR6225TRPBF
RDS(on)=4.0 mΩ
IRL6297SDTRPBF * *
RDS(on)=3.8 mΩ; dual
IRLH6224TRPBF
RDS(on)=3.0 mΩ
4-10
BSC046N02KS G
RDS(on)=4.6 mΩ
IRF3717
RDS(on)=4.4 mΩ
> 10
IRLHS6242TRPBF
RDS(on)=11.7 mΩ
IRLHS6276TRPBF * *
RDS(on)=45.0 mΩ; dual
www.infineon.com/powermosfet-12V-300V
OptiMOS™ and StrongIRFET™ 25 V logic level
RDS(on) max
@ VGS=10V
[mΩ]
DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SO-8
< 1
IRF6718L2TRPBF
RDS(on)=0.7 mΩ
IQE006NE2LM5 3)
RDS(on)=0.6 mΩ
BSC004NE2LS5 2)
RDS(on)=0.9 mΩ
BSB008NE2LX
RDS(on)=0.8 mΩ
IQE006NE2LM5CG 3)
RDS(on)=0.6 mΩ
BSC009NE2LS5
RDS(on)=0.9 mΩ
BSZ009NE2LS5
RDS(on)=0.9 mΩ
BSC009NE2LS5I * *
RDS(on)=0.95 mΩ
1-2
IRF6898MTRPBF * *
RDS(on)=1.1 mΩ
BSZ010NE2LS5
RDS(on)=1.0 mΩ
BSC010NE2LS
RDS(on)=1.0 mΩ
BSB012NE2LXI * *
RDS(on)=1.2 mΩ
BSZ011NE2LS5****
RDS(on)=1.1 mΩ
BSC010NE2LSI * *
RDS(on)=1.05 mΩ
IRF6717MTRPBF
RDS(on)=1.25 mΩ
BSZ011NE2LS5I
RDS(on)=1.1 mΩ
BSC014NE2LSI * *
RDS(on)=1.4 mΩ
IRF6894MTRPBF * *
RDS(on)=1.3 mΩ
BSZ013NE2LS5I * *
RDS(on)=1.3 mΩ
IRFH5250D
RDS(on)=1.4 mΩ
BSB013NE2LXI * *
RDS(on)=1.3 mΩ
BSZ014NE2LS5IF * * *
RDS(on)=1.45 mΩ
BSC015NE2LS5I * *
RDS(on)=1.5 mΩ
IRF6797MTRPBF * *
RDS(on)=1.4 mΩ
BSZ017NE2LS5I * *
RDS(on)=1.7 mΩ
BSC018NE2LS
RDS(on)=1.8 mΩ
IRF6716M
RDS(on)=1.6 mΩ
BSZ018NE2LS
RDS(on)=1.8 mΩ
BSC018NE2LSI * *
RDS(on)=1.8 mΩ
IRF6715MTRPBF
RDS(on)=1.6 mΩ
BSZ018NE2LSI * *
RDS(on)=1.8 mΩ
IRF6893MTRPBF * *
RDS(on)=1.6 mΩ
IRF6892STRPBF * *
RDS(on)=1.7 mΩ
IRF6795MTRPBF * *
RDS(on)=1.8 mΩ
2-4
IRF6714MTRPBF
RDS(on)=2.1 mΩ
ISK024NE2LM5 * * * *
RDS(on)=2.4 mΩ
BSZ031NE2LS5
RDS(on)=3.1 mΩ
BSC024NE2LS
RDS(on)=2.4 mΩ
BSF030NE2LQ
RDS(on)=3.0 mΩ
BSZ033NE2LS5
RDS(on)=3.3 mΩ
BSC026NE2LS5
RDS(on)=2.6 mΩ
IRF8252
RDS(on)=2.7 mΩ
BSF035NE2LQ
RDS(on)=3.5 mΩ
BSZ036NE2LS
RDS(on)=3.6 mΩ
BSC032NE2LS
RDS(on)=3.2 mΩ
IRF6811STRPBF * *
RDS(on)=3.7 mΩ
BSZ037NE2LS5 * * * *
RDS(on)= 3.7mΩ
BSZ039NE2LS5 * * * *
RDS(on) = 3.9 mΩ
4-10
IRF6802SD
RDS(on)=4.2 mΩ
IRF6710S2TRPBF
RDS(on)=4.5 mΩ
IRFHM8228TRPBF
RDS(on)=5.2 mΩ
BSC050NE2LS
RDS(on)=5.0 mΩ
IRF6712STRPBF
RDS(on)=4.9 mΩ
BSZ060NE2LS
RDS(on)=6.0 mΩ
IRF6810STRPBF * *
RDS(on)=5.2 mΩ
IRFHM8235TRPBF
RDS(on)=7.7 mΩ
> 10
IRFHS8242
RDS(on)=13 mΩ
99
For more details on the product,
click on the part number.
OptiMOS™ and StrongIRFET™ 25/30 V in Power Stage 3x3 and 5x6
Part number Package Monolithically
integrated Schottky
like diode
BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
High-side Low-side High-side Low-side
BSZ0910ND TISON 3 x 3 – 30 13 13 4.0 4.0
BSZ0909ND TISON 3 x 3 – 30 25 25 1.8 1.8
BSC0910NDI TISON 5 x 6 ü25 5.9 1.6 7.7 25.0
BSC0911ND TISON 5 x 6 – 25 4.8 1.7 7.7 25.0
BSC0921NDI TISON 5 x 6 ü30 7.0 2.1 5.8 21.0
BSC0923NDI TISON 5 x 6 ü30 7.0 3.7 5.2 12.2
BSC0924NDI TISON 5 x 6 ü30 7.0 5.2 5.2 8.6
BSC0925ND TISON 5 x 6 – 30 6.4 6.4 5.2 6.7
BSC0993ND TISON 5 x 6 – 30 7.0 7.0 5.4 6.7
OptiMOS™ and StrongIRFET™ 25/30 V in Power Block 5x6 and 5x4
Part number Package Monolithically
integrated Schottky
like diode
BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
High-side Low-side High-side Low-side
BSG0810NDI TISON 5 x 6 ü25 4.0 1.2 5.6 16.0
BSG0811ND TISON 5 x 6 – 25 4.0 1.1 5.6 20.0
BSG0813NDI TISON 5 x 6 ü25 4.0 1.7 5.6 12.0
www.infineon.com/powermosfet-12V-300V
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
100
For more details on the product,
click on the part number.
Product portfolio
OptiMOS™ and StrongIRFET™ 30V logic level
RDS(on), max.
@ VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-220
<1
IPB009N03L G
RDS(on)=0.95 mΩ
1-2
IRLS3813TRLPBF
RDS(on)=1.95 mΩ
IRLB3813PBF
RDS(on)=1.95 mΩ
2-4
IRLR8743TRPBF
RDS(on)=3.1 mΩ
IRFR8314TRPBF
RDS(on)=2.2 mΩ
IRLB8314PBF
RDS(on)=2.4 mΩ
IPD031N03L G
RDS(on)=3.1 mΩ
IRL3713PBF
RDS(on)=3.0 mΩ
IPB034N03L G
RDS(on)=3.4 mΩ
IRLB8743PBF
RDS(on)=3.2 mΩ
IPD040N03L G
RDS(on)=4.0 mΩ
IPP034N03L G
RDS(on)=3.4 mΩ
4-10
IPD050N03L G
RDS(on)=5.0 mΩ
IPB042N03L G
RDS(on)=4.2 mΩ
IPP042N03L G
RDS(on)=4.2 mΩ
IRLR8726TRPBF
RDS(on)=5.8 mΩ
IPB055N03L G
RDS(on)=5.5 mΩ
IRLB8748PBF
RDS(on)=4.8 mΩ
IPD060N03L G
RDS(on)=6.0 mΩ
IPB065N03L G
RDS(on)=6.5 mΩ
IPP055N03L G
RDS(on)=5.5 mΩ
IPD075N03L G
RDS(on)=7.5 mΩ
IPB080N03L G
RDS(on)=8.0 mΩ
IRL8113PBF
RDS(on)=6.0 mΩ
IRLR8729TRPBF
RDS(on)=8.9 mΩ
IRLB8721PBF
RDS(on)=8.7 mΩ
IPD090N03L G
RDS(on)=9.0 mΩ
10-25 IPD135N03L G
RDS(on)=13.5 mΩ
IRLR3103
RDS(on)=19.0 mΩ
OptiMOS™ and StrongIRFET™ 30V logic level
RDS(on), max.
@ VGS=10V
[mΩ]
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
<1
BSC005N03LS5 *
RDS(on)=0.5 mΩ
IPT004N03L
RDS(on)=0.4 mΩ
BSC005N03LS5I *
RDS(on)=0.5 mΩ
1-2 ISC011N03L5S
RDS(on)=1.1 mΩ
IRFH8303TRPBF
RDS(on)=1.1 mΩ
BSC011N03LS
RDS(on)=1.1 mΩ
BSC011N03LSI * *
RDS(on)=1.1 mΩ
BSC011N03LST * * *
RDS(on)=1.1 mΩ
IRF8301MTRPBF
RDS(on)=1.5 mΩ
IRFH8307TRPBF
RDS(on)=1.3 mΩ
IRF6726MTRPBF
RDS(on)=1.7 mΩ
BSZ0500NSI * *
RDS(on)=1.5 mΩ
BSC0500NSI * *
RDS(on)=1.3 mΩ
IRF6727MTRPBF
RDS(on)=1.7 mΩ
BSZ019N03LS
RDS(on)=1.9 mΩ
BSC014N03LS G
RDS(on)=1.4 mΩ
IRF8302MTRPBF * *
RDS(on)=1.8 mΩ
ISZ019N03L5S
RDS(on)=1.9 mΩ
IRFH5301TRPBF
RDS(on)=1.85 mΩ
BSZ0901NS
RDS(on)=2.0 mΩ
ISC019N03L5S
RDS(on)=1.9 mΩ
BSZ0501NSI * *
RDS(on)=2.0 mΩ
BSC0901NS
RDS(on)=1.9 mΩ
BSC0501NSI * *
RDS(on)=1.9 mΩ
BSC0901NSI * *
RDS(on)=2.0 mΩ
2-4 ISC026N03L5S
RDS(on)=2.6 mΩ
ISC037N03L5IS
RDS(on)=3.7 mΩ
ISZ040N03L5IS
RDS(on)=4.0 mΩ
ISC045N03L5S
RDS(on)=4.5 mΩ
4-10 ISZ065N03L5S
RDS(on)=6.5 mΩ
* Coming soon
* * Monolithically integrated Schottky-like diode
* * *
For more information on the product, contact our product support
www.infineon.com/powermosfet-12V-300V
www.infineon.com/baredie
101
For more details on the product,
click on the part number.
Product portfolio
OptiMOS™ and StrongIRFET™ 30V logic level
RDS(on), max.
@VGS=10V
[mΩ]
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 SO-8
Dual
PQFN 2 x 2
2-4
IRF8304MTRPBF
RDS(on)=2.2 mΩ
BSZ0901NSI * *
RDS(on)=2.1 mΩ
BSC020N03LS G
RDS(on)=2.0 mΩ
ISK036N03LM5 2)
RDS(on)=3.6 mΩ
IRFH5302TRPBF
RDS(on)=2.1 mΩ
IRF6724MTRPBF
RDS(on)=2.5 mΩ
IRLHM620TRPBF
RDS(on)=2.5 mΩ
BSC0502NSI * *
RDS(on)=2.4 mΩ
IRF8306MTRPBF * *
RDS(on)=2.5 mΩ
BSZ0902NS
RDS(on)=2.6 mΩ
BSC025N03LS G
RDS(on)=2.5 mΩ
IRFH5302DTRPBF * *
RDS(on)=2.5 mΩ
BSC0902NS
RDS(on)=2.6 mΩ
IRF8252TRPBF
RDS(on)=2.7 mΩ
BSZ0902NSI * *
RDS(on)=2.8 mΩ
BSC0902NSI * *
RDS(on)=2.8 mΩ
IRF8788TRPBF
RDS(on)=2.8 mΩ
BSZ0502NSI * *
RDS(on)=2.8 mΩ
IRFH8316TRPBF
RDS(on)=2.95 mΩ
BSC030N03LS G
RDS(on)= 3.0 mΩ
BSZ0503NSI * *
RDS(on)=3.4 mΩ
IRFH8318TRPBF
RDS(on)=3.1 mΩ
IRLHM630 * * *
RDS(on)= 3.5 mΩ
BSC0503NSI * *
RDS(on)=3.2 mΩ
IRF7862TRPBF
RDS(on)=3.3 mΩ
BSZ035N03LS G
RDS(on)=3.5 mΩ
BSC034N03LS G
RDS(on)=3.4 mΩ
IRF8734TRPBF
RDS(on)=3.5 mΩ
IRFHM830
RDS(on)= 3.8 mΩ
BSC0504NSI * *
RDS(on)=3.7 mΩ
BSZ0904NSI * *
RDS(on)=4.0 mΩ
BSC0904NSI * *
RDS(on)=3.7 mΩ
4-10
IRF6722MTRPBF
RDS(on)= 7.7 mΩ
IRFHM830D
RDS(on)= 4.3 mΩ
IRFH8324TRPBF
RDS(on)=4.1 mΩ
BSZ0506NS
RDS(on)=4.4 mΩ
BSC042N03LS G
RDS(on)=4.2 mΩ
IRFHM8326TRPBF
RDS(on)=4.7 mΩ
BSC0906NS
RDS(on)=4.5 mΩ
IRFH5304TRPBF
RDS(on)=4.5 mΩ
IRFH8321TRPBF
RDS(on)=4.9 mΩ
BSZ050N03LS G
RDS(on)=5.0 mΩ
IRFH8325TRPBF
RDS(on)=5.0 mΩ
IRF8736TRPBF
RDS(on)=4.8 mΩ
BSZ058N03LS G
RDS(on)=5.8 mΩ
BSC050N03LS G
RDS(on)=5.0 mΩ
IRFHM8329TRPBF
RDS(on)=6.1 mΩ
BSC052N03LS
RDS(on)=5.2 mΩ
BSZ065N03LS
RDS(on)=6.5 mΩ
BSC057N03LS G
RDS(on)=5.7 mΩ
IRF8327S2 * * * *
RDS(on)= 7.3 mΩ
IRFHM8330TRPBF
RDS(on)=6.6 mΩ
IRFH8330TRPBF
RDS(on)=6.6 mΩ
BSZ0994NS
RDS(on)= 7.0 mΩ
BSC080N03LS G
RDS(on)=8.0 mΩ
IRFHM831
RDS(on)= 7.8 mΩ
IRFH8334TRPBF
RDS(on)=9.0 mΩ
IRF8721TRPBF
RDS(on)=8.5 mΩ
BSZ088N03LS G
RDS(on)=8.8 mΩ
BSC090N03LS G
RDS(on)=9.0 mΩ
IRF8714TRPBF
RDS(on)=8.7 mΩ
IRFHM8334TRPBF
RDS(on)=9.0 mΩ
BSC0909NS
RDS(on)=9.2 mΩ
BSZ100N03LS G
RDS(on)=10.0 mΩ
10-63
BSZ0909NS
RDS(on)=12.0 mΩ
BSC120N03LS G
RDS(on)=12.0 mΩ
IRF8707TRPBF
RDS(on)=11.9 mΩ
IRF7907TRPBF
RDS(on)=11.8 mΩ+16.4 mΩ
IRLHS6342 * * *
RDS(on)= 16 mΩ
IRFHM8337TRPBF
RDS(on)=12.4 mΩ
IRFH8337TRPBF
RDS(on)=12.8 mΩ
IRL6342 1) * * *
RDS(on) = 14.6 mΩ
IRF8513TRPBF * * * *
RDS(on)=2.7 mΩ+15.5 mΩ
IRFHS8342
RDS(on)= 16 mΩ
BSZ130N03LS G
RDS(on)=13.0 mΩ
IRL6372 1) * * *
RDS(on) = 18 mΩ; dual
IRF8313TRPBF
RDS(on)=15.5 mΩ+15.5 mΩ
IRLHS6376 * * *
RDS(on)= 63 mΩ; dual
IRFHM8363TRPBF
RDS(on)=14.9 mΩ
IRF7905TRPBF
RDS(on)=17.1 mΩ+21.8 mΩ
2 x 7.2
BSC072N03LD G
RDS(on)=7.2 mΩ
2 x 15 BSC150N03LD G
RDS(on)=15.0 mΩ
* * Monolithically integrated Schottky-like diode
* * * R
DS(on)
max @V
GS
=4.5 V
* * * *
For more information on the product, contact our product support
1) 2.5 V
GS
capable
2) Coming soon
www.infineon.com/powermosfet-12V-300V
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
102
For more details on the product,
click on the part number.
Product portfolio
OptiMOS™ and StrongIRFET™ 30V logic level 5 V optimized
RDS(on), max.
@VGS=10V
[mΩ]
PQFN 3.3 x 3.3 SuperSO8 SO-8 SO-8
Dual
1-2
BSC016N03MS G
RDS(on) =1.6 mΩ
BSC020N03MS G
RDS(on) =2.0 mΩ
2-4
BSC025N03MS G
RDS(on) =2.5 mΩ
BSO033N03MS G
RDS(on) =3.3 mΩ
BSZ035N03MS G
RDS(on) =3.5 mΩ
BSC030N03MS G
RDS(on) =3.0 mΩ
BSO040N03MS G
RDS(on) =4.0 mΩ
4-10
BSC042N03MS G
RDS(on) =4.2 mΩ
BSZ050N03MS G
RDS(on) =5.0 mΩ
BSC057N03MS G
RDS(on) =5.7 mΩ
BSC080N03MS G
RDS(on) =8.0 mΩ
BSZ058N03MS G
RDS(on) =5.8 mΩ
BSC090N03MS G
RDS(on) =9.0 mΩ
BSZ088N03MS G
RDS(on) =8.8 mΩ
BSC100N03MS G
RDS(on) =10.0 mΩ
BSZ100N03MS G
RDS(on) =10.0 mΩ
>10
BSZ130N03MS G
RDS(on) =13.0 mΩ
BSC120N03MS G
RDS(on) =12.0 mΩ
BSO110N03MS G
RDS(on) =11.0 mΩ
BSO150N03MD G
RDS(on) =15.0 mΩ
BSO220N03MD G
RDS(on) =22.0 mΩ
OptiMOS™ and StrongIRFET™ 40V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-220 TO-247 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-220 FullPAK
<1
IRF40SC240
R
DS(on)
=0.65 mΩ
IRFS7430TRL7PP
RDS(on) =0.75 mΩ
1-2
IRFS7430TRLPBF
RDS(on) =1.3 mΩ
IRFS7434TRL7PP
RDS(on) =1.0 mΩ
IRFB7430PBF
RDS(on) =1.3 mΩ
IRFP7430PBF
RDS(on) =1.3 mΩ
IRL40DM247
2)
RDS(on) =1.0 mΩ
IRFH7084TRPBF
RDS(on) =1.25 mΩ
IPB015N04N G
RDS(on) =1.5 mΩ
IPB011N04N G
RDS(on) =1.1 mΩ
IPP015N04N G
RDS(on) =1.5 mΩ
IRF7739L1TRPBF
RDS(on) =1.0 mΩ
IRFH7004TRPBF
RDS(on) =1.4 mΩ
IRFS3004
RDS(on) =1.75 mΩ
IRFS3004-7P
RDS(on) =1.25 mΩ
IRFB7434PBF
RDS(on) =1.6 mΩ
IRF7480MTRPBF
RDS(on) =1.2 mΩ
BSC017N04NS G
RDS(on) =1.7 mΩ
IRFS7434TRLPBF
RDS(on) =1.6 mΩ
IRFS7437TRL7PP
RDS(on) =1.4 mΩ
IRFB3004PBF
RDS(on) =1.75 mΩ
IRF7946TRPBF
RDS(on) =1.4 mΩ
IRF40H210
RDS(on) =1.7 mΩ
IRFS7437TRLPBF
RDS(on) =1.8 mΩ
IPB020N04N G
RDS(on) =2.0 mΩ
IRFB7437PBF
RDS(on) =2.0 mΩ
BSB015N04NX3 G
RDS(on) =1.5 mΩ
BSC019N04NS G
RDS(on) =1.9 mΩ
IRF40DM229
RDS(on)=1.85 mΩ
2-4
IRFR7440TRPBF
RDS(on) =2.4 mΩ
IRFS7440TRLPBF
RDS(on) =2.5 mΩ
IPP023N04N G
RDS(on) =2.3 mΩ
IRF7483MTRPBF
RDS(on) =2.3 mΩ
IRFH7440TRPBF
RDS(on) =2.4 mΩ
IPA028N04NM3S
RDS(on) =2.8 mΩ
IRFR7446TRPBF
RDS(on) =3.9 mΩ
IRF1404S
RDS(on) =4.0 mΩ
IRFB7440PBF
RDS(on) =2.5 mΩ
IRFH5004TRPBF
R
DS(on)
=2.6 mΩ
IRFB7446PBF
RDS(on) =3.3 mΩ
BSC030N04NS G
RDS(on) =3.0 mΩ
IRFH7446TRPBF
RDS(on) =3.3 mΩ
4-10
IPP041N04N G
RDS(on) =4.1 mΩ
BSC054N04NS G
RDS(on)=5.4 mΩ
IPA041N04N G *
RDS(on)=4.1 mΩ
IRF40R207
RDS(on) =5.1 mΩ
IRF40B207
RDS(on) =4.5 mΩ
IRF40H233
RDS(on)=5.9 mΩ, dual
IPP048N04N G
RDS(on)=4.8 mΩ
BSC076N04ND
RDS(on) =7.6 mΩ,
dual
>10
BSZ105N04NS G
RDS(on) =10.5 mΩ
BSZ165N04NS G
RDS(on) =16.5 mΩ
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OptiMOS™ and StrongIRFET™ 40V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-220 TO-247 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
<1
IRL40SC228
RDS(on) =0.65 mΩ
IRL7472L1TRPBF
RDS(on) =0.45 mΩ
BSC007N04LS6
RDS(on)=0.7 mΩ
IRL40T209
RDS(on)= 0.8 mΩ
IRL40SC209
RDS(on) =0.8 mΩ
1-2
IPB015N04L G
RDS(on) =1.5 mΩ
IPB011N04L G
RDS(on) =1.1 mΩ
IRL40B209
RDS(on) =1.25 mΩ
IRLP3034PBF
RDS(on) =1.7 mΩ
BSB014N04LX3 G
RDS(on) =1.4 mΩ
BSC010N04LS
RDS(on) =1.0 mΩ
IRLS3034TRLPBF
RDS(on) =1.7 mΩ
IRLS3034TRL7P
RDS(on) =1.4 mΩ
IRLB3034PBF
RDS(on) =1.7 mΩ
IRL7486MTRPBF
RDS(on) =1.4 mΩ
BSC010N04LS6
RDS(on) =1.0 mΩ
IRL40S212
RDS(on) =1.9 mΩ
IRL40B212
RDS(on) =1.9 mΩ
BSC010N04LST
RDS(on)=1.0 mΩ
BSC010N04LSI
RDS(on) =1.05 mΩ
BSC010N04LSC *
RDS(on)= 1.05 mΩ
BSC014N04LST
RDS(on) =1.4 mΩ
BSC014N04LS
RDS(on) =1.4 mΩ
BSC014N04LSI
RDS(on) =1.45 mΩ
BSC016N04LS G
RDS(on) =1.6 mΩ
BSZ018N04LS6
RDS(on)=1.8 mΩ
BSC018N04LS G
RDS(on) =1.8 mΩ
BSC019N04LS
RDS(on) =1.9 mΩ
BSC019N04LST
RDS(on) =1.9 mΩ
2-4
IRL40B215
RDS(on) =2.7 mΩ
IRF6613TRPBF
RDS(on)=3.4 mΩ
BSZ021N04LS6
RDS(on) =2.1 mΩ
BSC022N04LS
RDS(on) =2.2 mΩ
BSZ024N04LS6
RDS(on) =2.4 mΩ
BSC022N04LS6
RDS(on) =2.2 mΩ
IRLH5034TRPBF
RDS(on)=2.4 mΩ
IPP039N04L G
RDS(on) =3.9 mΩ
BSZ025N04LS
RDS(on) =2.5 mΩ
BSC026N04LS
RDS(on) =2.6 mΩ
BSZ028N04LS
RDS(on) =2.8 mΩ
BSC027N04LS G
RDS(on) =2.7 mΩ
BSC032N04LS
RDS(on) =3.2 mΩ
IPD036N04L G
RDS(on)=3.6 mΩ
IRL1404S
RDS(on) =4.0 mΩ
BSZ034N04LS
RDS(on) =3.4 mΩ
BSC035N04LS G
RDS(on) =3.5 mΩ
4-10
IRLR31142TRPBF * *
RDS(on) =4.5 mΩ
IRF6616TRPBF
RDS(on) =5.0 mΩ
BSZ040N04LS G
RDS(on) =4.0 mΩ
BSC050N04LS G
RDS(on) =5.0 mΩ
IRF6614TRPBF
RDS(on)=8.3 mΩ
BSZ063N04LS6
RDS(on) =6.3 mΩ
BSC059N04LS G
RDS(on) =5.9 mΩ
BSC059N04LS6
RDS(on) =5.9 mΩ
BSC072N04LD
RDS(on)=7.2 mΩ,
dual
BSZ097N04LS G
RDS(on) =9.7 mΩ
BSC093N04LS G
RDS(on) =9.3 mΩ
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* *
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
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Product portfolio
2)
6 V rated (RDS(on) also specified @ VGS=6 V)
*
For more information on the product, contact our product support
OptiMOS™ and StrongIRFET™ 60V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
1-2
IPB010N06N 2)
RDS(on) =1.0 mΩ
IRF60C241 *
RDS(on)=1.3 mΩ
IRFS7530TRL7PP
RDS(on) =1.4 mΩ
IPB014N06N 2)
RDS(on) =1.4 mΩ
IPB017N06N3 G
RDS(on) =1.7 mΩ
IRFS7530TRLPBF
RDS(on) =2.0 mΩ
IRFS7534TRL7PP * *
RDS(on) =1.95 mΩ
IPI020N06N 2)
RDS(on) =2.0 mΩ
IRFB7530PBF
RDS(on) =2.0 mΩ
IRFP7530PBF
RDS(on) =2.0 mΩ
2-4
IPD025N06N 2)
RDS(on) =2.5 mΩ
IRFS7534TRLPBF
RDS(on) =2.4 mΩ
IRFS3006TRL7PP
RDS(on) =2.1 mΩ
IPP020N06N 2)
RDS(on) =2.0 mΩ
IRFS3006
RDS(on) =2.5 mΩ
IPI024N06N3 G
RDS(on) =2.4 mΩ
IRFB7534PBF
RDS(on) =2.4 mΩ
IPP024N06N3 G 2)
RDS(on) =2.4 mΩ
IPB026N06N 2)
RDS(on) =2.6 mΩ
IRFB3006PBF
RDS(on) =2.5 mΩ
IRFP3006PBF
RDS(on) =2.5 mΩ
IPB029N06N3 G
RDS(on) =2.9 mΩ
IPI029N06N 2)
RDS(on) =2.9 mΩ
IPP029N06N 2)
RDS(on) =2.9 mΩ
IPA029N06N 2)
RDS(on) =2.9 mΩ
IRFP3206PBF
RDS(on) =3.0 mΩ
IRFB3206BF
RDS(on) =3.0 mΩ
IPA029N06NM5S
RDS(on) =2.9 mΩ
IPD033N06N 2)
RDS(on)=3.3 mΩ
IRFS3206
RDS(on)=3.0 mΩ
IPI032N06N3 G
RDS(on) =3.2 mΩ
IPP032N06N3 G
RDS(on) =3.2 mΩ
IPA032N06N3 G
RDS(on) =3.2 mΩ
IPD034N06N3 G
RDS(on) =3.4 mΩ
IRFS7537TRLPBF
RDS(on) =3.3 mΩ
IRFB7537PBF
RDS(on) =3.3 mΩ
IRFP7537PBF
RDS(on) =3.3 mΩ
IRFB3256PBF
RDS(on) =3.4 mΩ
IPD038N06N3 G
RDS(on) =3.8 mΩ
IPB037N06N3 G
RDS(on) =3.7 mΩ
IPP040N06N3 G
RDS(on) =4.0 mΩ
IPA040N06N 2)
RDS(on) =4.0 mΩ
IRFS3306
RDS(on) =4.2 mΩ
IPI040N06N3 G
RDS(on) =4.0 mΩ
IPP040N06N 2)
RDS(on) =4.0 mΩ
IPA040N06N M5S
RDS(on) =4.0 mΩ
IRFB3306PBF
RDS(on) =4.2 mΩ
IRFP3306PBF
RDS(on) =4.2 mΩ
4-10
IRFR7540TRPBF
RDS(on) =4.8 mΩ
IRFS7540TRLPBF
RDS(on) =5.1 mΩ
IRFB7540PBF
RDS(on) =5.1 mΩ
IPA057N06N3 G
RDS(on) =5.7 mΩ
IPD053N06N 2)
RDS(on) =5.3 mΩ
IPB054N06N3 G
RDS(on)=5.4 mΩ
IPP057N06N3 G 2)
RDS(on) =5.7 mΩ
IPB057N06N 2)
RDS(on) =5.7 mΩ
IRFB7545PBF
RDS(on) =5.9 mΩ
IRFR7546TRPBF
RDS(on) =7.9 mΩ
IRF1018ES
RDS(on)=8.4 mΩ
IPP060N06N 2)
RDS(on) =6.0 mΩ
IPA060N06N 2)
RDS(on) =6.0 mΩ
IRFR1018ES *
RDS(on)=8.4 mΩ
IRFB7546PBF
RDS(on) =7.3 mΩ
IRF1018EPBF
RDS(on) =8.4 mΩ
IPA060N06NM5S
RDS(on) =6.0 mΩ
IPD088N06N3 G
RDS(on)=8.8 mΩ
IRF60B217
RDS(on) =9.0 mΩ
IPA093N06N3 G
RDS(on) =9.3 mΩ
IRF60R217
RDS(on) =9.9 mΩ
IPB090N06N3 G
RDS(on) =9.0 mΩ
IPP093N06N3 G
RDS(on) =9.3 mΩ
>10
IRFR3806
RDS(on) =15.8 mΩ
IRFS3806
RDS(on) =15.8 mΩ
IRFB3806PBF
RDS(on) =15.8 mΩ
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Product portfolio
2) 6 V rated (R
DS(on)
also specified @ V
GS
= 6 V)
OptiMOS™ and StrongIRFET™ 60V normal level
RDS(on), max.
@VGS=10V
[mΩ]
DirectFET™ PQFN 3.3 x 3.3 SO-8 SuperSO8 TO-Leadless
<1
IPT007N06N 2)
RDS(on) =0.7 mΩ
1-2
IRF7749L1TRPBF
RDS(on) =1.5 mΩ
BSC012N06NS
RDS(on) =1.2 mΩ
IPT012N06N 2)
RDS(on) =1.2 mΩ
BSC014N06NS 2)
RDS(on) =1.4 mΩ
BSC014N06NST 2)
RDS(on) =1.45 mΩ
BSC016N06NST 2)
RDS(on) =1.6 mΩ
BSC016N06NS 2)
RDS(on) =1.6 mΩ
BSC019N06NS 2)
RDS(on) =1.9 mΩ
2-4
IRF7748L1TRPBF
RDS(on) =2.2 mΩ
BSZ039N06NS
RDS(on)=3.9 mΩ
BSC028N06NS 2)
RDS(on) =2.8 mΩ
BSC028N06NST 2)
RDS(on) =2.8 mΩ
BSB028N06NN3 G
RDS(on) =2.8 mΩ
BSC031N06NS3 G
RDS(on) =3.1 mΩ
IRF60DM206
RDS(on) =2.9 mΩ
IRFH7085TRPBF
RDS(on) =3.2 mΩ
BSC034N06NS 2)
RDS(on) =3.4 mΩ
IRF7580MTRPBF
RDS(on) =3.6 mΩ
BSC039N06NS 2)
RDS(on) =3.9 mΩ
4-10
IRFH5006TRPBF
RDS(on) =4.1 mΩ
IRF6648
RDS(on) =7.0 mΩ
BSZ042N06NS 2)
RDS(on) =4.2 mΩ
IRF7855TRPBF
RDS(on)=9.4 mΩ
IRLH5036TRPBF
RDS(on) =4.4 mΩ
IRF6674
RDS(on) =11.0 mΩ
IRFH7545TRPBF
RDS(on) =5.2 mΩ
BSZ068N06NS 2)
RDS(on) =6.8 mΩ
BSC066N06NS 2)
RDS(on) =6.6 mΩ
BSC076N06NS3 G
RDS(on) =7.6 mΩ
BSZ100N06NS 2)
RDS(on) =10.0 mΩ
IRF7351TRPBF
RDS(on)=17.8 mΩ, dual
BSC097N06NS 2)
RDS(on) =9.7 mΩ
BSC097N06NST 2)
RDS(on)=9.7 mΩ
>10
BSZ110N06NS3 G
RDS(on) =11.0 mΩ
BSC110N06NS3 G
RDS(on) =11.0 mΩ
IRFH5406TRPBF
RDS(on)=14.4 mΩ
BSC155N06ND
RDS(on)=15.5 mΩ, dual
OptiMOS™ and StrongIRFET™ 60V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-262
(I2PAK)
TO-220 PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8
1-2
IRL60SC216
RDS(on) =1.5 mΩ
IPB019N06L3 G
RDS(on) =1.9 mΩ
IPB016N06L3 G
RDS(on) =1.6 mΩ
IRL60S216
RDS(on) =1.95 mΩ
IRLS3036TRL7PP
RDS(on) =1.9 mΩ
IRL60SL216
RDS(on) =1.95 mΩ
IRL60B216
RDS(on) =1.9 mΩ
2-4
IRLS3036TRLPBF
RDS(on) =2.4 mΩ
IRLB3036PBF
RDS(on) =2.4 mΩ
BSZ037N06LS5
RDS(on) =3.7 mΩ
BSC027N06LS5
RDS(on) =2.7 mΩ
IPD031N06L3 G
RDS(on) =3.1 mΩ
IPB034N06L3 G
RDS(on) =3.4 mΩ
IPP037N06L3 G
RDS(on) =3.7 mΩ
BSC028N06LS3 G
RDS(on) =2.8 mΩ
4-10
IPD048N06L3 G
RDS(on) =4.8 mΩ
IPP052N06L3 G
RDS(on) =5.2 mΩ
BSZ040N06LS5
RDS(on) =4.0 mΩ
IRLH5036TRPBF
RDS(on) =4.4 mΩ
IRLR3636TRPBF
RDS(on) =6.8 mΩ
BSZ065N06LS5
RDS(on) =6.5 mΩ
BSC065N06LS5
RDS(on)=6.5 mΩ
IPD079N06L3 G
RDS(on) =7.9 mΩ
IPB081N06L3 G
RDS(on) =8.1 mΩ
IPI084N06L3 G
RDS(on) =8.4 mΩ
IPP084N06L3 G
RDS(on) =8.4 mΩ
BSZ067N06LS3 G
RDS(on) =6.7 mΩ
BSC067N06LS3 G
RDS(on) =6.7 mΩ
BSZ099N06LS5
RDS(on) =9.9 mΩ
BSC094N06LS5
RDS(on) =9.4 mΩ
BSZ100N06LS3 G
RDS(on) =10.0 mΩ
BSC100N06LS3 G
RDS(on) =10.0 mΩ
>10 IPD220N06L3 G
RDS(on) =22.0 mΩ
IRL60HS118
RDS(on)=17.0 mΩ
BSC112N06LD
RDS(on)=11.2 mΩ, dual
IPD350N06L G
RDS(on) =35.0 mΩ
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
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Product portfolio
OptiMOS™ and StrongIRFET™ 75 V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-220 TO-247 DirectFET™ SuperSO8
1-2
IPB020NE7N3 G
RDS(on) =2.0 mΩ
IRFS7730TRL7PP
RDS(on) =2.0 mΩ
IRFP7718PBF
RDS(on) =1.8 mΩ
IRFP4368PBF
RDS(on) =1.85 mΩ
2-4
IRFS7730TRLPBF
RDS(on) =2.6 mΩ
IRFS3107TRL7PP
RDS(on) =2.6 mΩ
IPP023NE7N3 G
RDS(on) =2.3 mΩ
IRFP3077PBF
RDS(on) =3.3 mΩ
IRF7759L2TRPBF
RDS(on) =2.3 mΩ
IRFS3107TRLPBF
RDS(on) =3.0 mΩ
IRFB7730PBF
RDS(on) =2.6 mΩ
IPB031NE7N3 G
RDS(on) =3.1 mΩ
IRFS7734TRL7PP
RDS(on) =3.05 mΩ
IRFB3077PBF
RDS(on) =3.3 mΩ
BSC036NE7NS3 G
RDS(on) =3.6 mΩ
IRFS7734TRLPBF
RDS(on) =3.5 mΩ
IPP034NE7N3 G
RDS(on) =3.4 mΩ
IRFB7734PBF
RDS(on) =3.5 mΩ
4-10
IRFS3207ZTRLPBF
RDS(on) =4.1 mΩ
IRFB3207ZPBF
RDS(on) =4.5 mΩ
IPB049NE7N3 G
RDS(on) =4.9 mΩ
IPP052NE7N3 G
RDS(on) =5.2 mΩ
BSC042NE7NS3 G
RDS(on) =4.2 mΩ
IRFS3307ZTRLPBF
RDS(on) =5.8 mΩ
IRFB3307ZPBF
RDS(on) =5.8 mΩ
IRFS7762TRLPBF
RDS(on) =6.7 mΩ
IPP062NE7N3 G
RDS(on) =6.2 mΩ
IRF7780MTRPBF
RDS(on) =5.7 mΩ
IRFH5007TRPBF
RDS(on) =5.9 mΩ
IRFR7740TRPBF
RDS(on) =7.2 mΩ
IRFB7740PBF
RDS(on) =7.3 mΩ
IRFS7787TRLPBF
RDS(on) =8.4 mΩ
IRFB7787PBF
RDS(on) =8.4 mΩ
IRFH7787TRPBF
RDS(on) =8.0 mΩ
IRFR3607PBF
RDS(on) =9.0 mΩ
IRFS3607TRLPBF
RDS(on)=9.0 mΩ
IRFB3607PBF
RDS(on) =9.0 mΩ
>10
IRFR7746TRPBF
RDS(on) =11.2 mΩ
IRFB7746PBF
RDS(on) =10.6 mΩ
BSF450NE7NH3 1)
RDS(on) =45.0 mΩ
1) DirectFET™ S
*
For more information on the product, contact our product support
OptiMOS™ and StrongIRFET™ 80V normal level – logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
1-2
IPB017N08N5
RDS(on) =1.7 mΩ
IPB015N08N5
RDS(on) =1.5 mΩ
IPT012N08N5
RDS(on) =1.2 mΩ
IPB020N08N5
RDS(on) =2.0 mΩ
IPB019N08N3 G
RDS(on) =1.9 mΩ
IPP020N08N5
RDS(on) =2.0 mΩ
BSC021N08NS5
RDS(on) =2.1 mΩ
IPT019N08N5
RDS(on) =1.9 mΩ
IPB019N08N5
RDS(on) =1.95 mΩ
2-4
IPB024N08N5
RDS(on) =2.4 mΩ
IPP023N08N5
RDS(on) =2.3 mΩ
BSC025N08LS5
RDS(on) =2.5 mΩ
IPB025N08N3 G
RDS(on) =2.5 mΩ
IPB030N08N3 G
RDS(on) =3.0 mΩ
IPP027N08N5
RDS(on) =2.7 mΩ
BSC026N08NS5
RDS(on) =2.6 mΩ
IPP028N08N3 G
RDS(on) =2.8 mΩ
IPA028N08N3 G
RDS(on) =2.8 mΩ
BSC030N08NS5
RDS(on) =3.0 mΩ
IPT029N08N5
RDS(on) =2.9 mΩ
IPB031N08N5
RDS(on) =3.1 mΩ
IPP034N08N5
RDS(on) =3.4 mΩ
BSC037N08NS5
RDS(on) =3.7 mΩ
BSC037N08NS5T
RDS(on)= 3.7 mΩ
IPB035N08N3 G
RDS(on) =3.5 mΩ
IPI037N08N3 G
RDS(on) =3.7 mΩ
IPP037N08N3 G
RDS(on) =3.7 mΩ
IPA037N08N3 G
RDS(on) =3.7 mΩ
BSC040N08NS5
RDS(on) =4.0 mΩ
4-10
IPD046N08N5
RDS(on)=4.6 mΩ
IPB049N08N5
RDS(on) =4.9 mΩ
IPP052N08N5
RDS(on) =5.2 mΩ
IPA040N08NM5S
RDS(on) =4.0 mΩ
BSB044N08NN3 G
R
DS(on)
=4.4 mΩ
BSC047N08NS3 G
R
DS(on)
=4.7 mΩ
IPD053N08N3 G
RDS(on) =5.3 mΩ
IPB054N08N3 G
RDS(on) =5.4 mΩ
IPP057N08N3 G
RDS(on) =5.7 mΩ
IPA052N08NM5S
RDS(on) =5.2 mΩ
BSC052N08NS5
RDS(on) =5.2 mΩ
IPB067N08N3 G
RDS(on) =6.7 mΩ
IPA057N08N3 G
RDS(on) =5.7 mΩ
BSZ070N08LS5
RDS(on) =7.0 mΩ
BSC057N08NS3 G
RDS(on) =5.7 mΩ
IRF6646TRPBF
RDS(on) =9.5 mΩ
BSZ075N08NS5
RDS(on) =7.5 mΩ
BSC061N08NS5
RDS(on) =6.1 mΩ
IPD096N08N3 G
RDS(on) =9.6 mΩ
IPP100N08N3 G
RDS(on) =9.7 mΩ
IRF7854TRPBF
RDS(on) =9.5 mΩ
BSZ084N08NS5
RDS(on) =8.4 mΩ
BSC072N08NS5
RDS(on) =7.2 mΩ
>10
BSB104N08NP3 *
RDS(on) =10.4 mΩ
IRL80HS120
RDS(on)=32.0 mΩ
BSZ110N08NS5
RDS(on) =11.0 mΩ
BSC117N08NS5
RDS(on) =11.7 mΩ
IPD135N08N3 G
RDS(on) =13.5 mΩ
BSZ123N08NS3 G
RDS(on) =12.3 mΩ
BSC123N08NS3 *
RDS(on) =12.3 mΩ
BSZ340N08NS3 G
RDS(on) =34.0 mΩ
BSC340N08NS3 G
RDS(on) =34.0 mΩ
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1) HB = Half-bridge
*
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Product portfolio
OptiMOS™ and StrongIRFET™ 100V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
1-2
IPB020N10N5
RDS(on) =2.0 mΩ
IPB017N10N5
RDS(on) =1.7 mΩ
IRF100P218
RDS(on)=1.1 mΩ
IPB020N10N5LF
RDS(on)=2.0 mΩ
IPB017N10N5LF
RDS(on)=1.7 mΩ
IRF100P219
RDS(on)=2.1 mΩ
2-4
IPB027N10N3 G
RDS(on) =2.7 mΩ
IPB024N10N5
RDS(on) =2.4 mΩ
IPP023N10N5
RDS(on) =2.3 mΩ
IRFP4468PBF
RDS(on) =2.6 mΩ
IPB027N10N5
RDS(on) =2.7 mΩ
IPB025N10N3 G
RDS(on) =2.5 mΩ
IPI030N10N3 G
RDS(on) =3.0 mΩ
IPP030N10N3 G
RDS(on) =3.0 mΩ
IPA030N10N3 G
RDS(on) =3.0 mΩ
IPB033N10N5LF
RDS(on) =3.3 mΩ
IPB032N10N5
RDS(on) =3.2 mΩ
IPP030N10N5
RDS(on)=3.0 mΩ
IPB039N10N3 G
RDS(on) =3.9 mΩ
IPP039N10N5
RDS(on)=3.9 mΩ
4-10
IPD050N10N5
RDS(on)=5.0 mΩ
IPB042N10N3 G
RDS(on) =4.2 mΩ
IRFS4010TRL7PP
RDS(on) =4.0 mΩ
IPI045N10N3 G
RDS(on) =4.5 mΩ
IRF100B201
RDS(on) =4.2 mΩ
IPA045N10N3 G
RDS(on) =4.5 mΩ
IRFP4110PBF
RDS(on) =4.5 mΩ
IPD068N10N3 G
RDS(on) =6.8 mΩ
IRF100S201
RDS(on) =4.2 mΩ
IRFB4110PBF
RDS(on) =4.5 mΩ
IPA050N10NM5S
RDS(on) =5.0 mΩ
IRFP4310ZPBF
RDS(on) =6.0 mΩ
IRFS4010TRLPBF
RDS(on) =4.7 mΩ
IPP045N10N3 G
RDS(on) =4.5 mΩ
IPB065N10N3 G
RDS(on)=6.5 mΩ
IRFB4310ZPBF
RDS(on) =6.0 mΩ
IRFS4310ZTRLPBF
RDS(on) =7.0 mΩ
IPI072N10N3 G
RDS(on) =7.2 mΩ
IPP072N10N3 G
RDS(on) =7.2 mΩ
IPA083N10N5
RDS(on) =8.3 mΩ
IPD082N10N3 G
RDS(on) =8.2 mΩ
IPP083N10N5
RDS(on) =8.3 mΩ
IPA083N10NM5S
RDS(on) =8.3 mΩ
IPB083N10N3 G
RDS(on) =8.3 mΩ
IPI086N10N3 G
RDS(on) =8.6 mΩ
IPP086N10N3 G
RDS(on) =8.6 mΩ
IPA086N10N3 G
RDS(on) =8.6 mΩ
IRF100B202
RDS(on) =8.6 mΩ
IRFS4410ZTRLPBF
RDS(on) =9.0 mΩ
IRFS4410ZTRLPBF
RDS(on) =9.0 mΩ
IRFP4410ZPBF *
RDS(on) =9.0 mΩ
IRFB4410ZPBF
RDS(on) =9.0 mΩ
10-25
IPD122N10N3 G
RDS(on) =12.2 mΩ
IPD12CN10N G
RDS(on)=12.4 mΩ
IPB123N10N3 G
RDS(on) =12.3 mΩ
IRFR4510TRPBF *
RDS(on) =13.9 mΩ
IRFS4510TRLPBF
RDS(on) =13.9 mΩ
IRFB4510PBF
RDS(on) =13.5 mΩ
IPA126N10NM3S
RDS(on) =12.6 mΩ
IPD180N10N3 G *
RDS(on) =18.0 mΩ
IPI180N10N3 G
RDS(on) =18.0 mΩ
IPD25CN10N G
RDS(on) =25.0 mΩ
>25
IPD33CN10N G
RDS(on) =33.0 mΩ
IRFI4212H-117P
RDS(on) =72.5 mΩ, HB 1)
IPD78CN10N G
RDS(on) =78.0 mΩ
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
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and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
108
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Product portfolio
1) DirectFET™ S
*
For more information on the product, contact our product support
OptiMOS™ and StrongIRFET™ 100V normal level
RDS(on), max.
@VGS=10V
[mΩ]
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SuperSO8 dual cool SO-8 TO-Leadless
1-2
IPT015N10N5
RDS(on) =1.5 mΩ
BSC027N10NS5
RDS(on) =2.7 mΩ
IPT020N10N3
RDS(on) =2.0 mΩ
IPT020N10N5
RDS(on) =2.0 mΩ
2-4
IRF7769L1TRPBF
RDS(on) =3.5 mΩ
BSC035N10NS5
RDS(on) =3.5 mΩ
BSC040N10NS5SC *
RDS(on) =4.0 mΩ
IPT026N10N5
RDS(on) =2.6 mΩ
BSC040N10NS5
RDS(on) =4.0 mΩ
4-10
BSC050N10N5 *
RDS(on) =5.0 mΩ
BSB056N10NN3 G
RDS(on) =5.6 mΩ
BSC060N10NS3 G
RDS(on) =6.0 mΩ
BSC070N10NS3 G
RDS(on) =7.0 mΩ
BSC070N10NS5SC *
RDS(on) =7.0 mΩ
BSC070N10NS5
RDS(on) =7.0 mΩ
IRFH5010TRPBF
RDS(on) =9.0 mΩ
BSZ097N10NS5
RDS(on) =9.7 mΩ
BSC098N10NS5
RDS(on) =9.8 mΩ
10-25
BSC100N10NSF G
RDS(on) =10.0 mΩ
IRF6644TRPBF
RDS(on) =13.0 mΩ
BSC109N10NS3 G
RDS(on) =10.9 mΩ
BSC118N10NS G
RDS(on) =11.8 mΩ
IRFH5110TRPBF
RDS(on) =12.4 mΩ
BSF134N10NJ3 G 1)
RDS(on) =13.4 mΩ
IRFH7110TRPBF
RDS(on) =13.5 mΩ
IRFH5210TRPBF
RDS(on) =14.9 mΩ
BSZ160N10NS3 G
RDS(on) =16.0 mΩ
BSC160N10NS3 G
RDS(on) =16.0 mΩ
IRF6662TRPBF
RDS(on) =22.0 mΩ
BSC196N10NS G
RDS(on) =19.6 mΩ
IRF7853TRPBF
RDS(on) =18.0 mΩ
>25
IRF6645TRPBF
RDS(on) =35.0 mΩ
BSZ440N10NS3 G
RDS(on) =44.0 mΩ
BSC252N10NSF G
RDS(on)=25.2 mΩ
IRF7665S2TRPBF
RDS(on) =62.0 mΩ
BSC440N10NS3 G
RDS(on) =44.0 mΩ
2 x 75
IRF6665TRPBF
RDS(on) =63.0 mΩ
BSC750N10ND G
RDS(on) =75.0 mΩ; dual
2 x 195
IRFHM792TRPBF
RDS(on) =195.0 mΩ, dual
OptiMOS™ and StrongIRFET™ 100V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D²PAK 7-pin)
TO-220 PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8
2-4
IRLS4030TRL7PP
RDS(on) =3.9 mΩ
BSC034N10LS5
RDS(on) =3.4 mΩ
4-10
IRLS4030TRLPBF
RDS(on) =4.3 mΩ
IRLB4030PBF
RDS(on) =4.3 mΩ
BSZ096N10LS5
RDS(on) =9.6 mΩ
BSC070N10LS5
RDS(on)=7.0 mΩ
IRLH5030TRPBF
RDS(on)=9.0 mΩ
BSC096N10LS5
RDS(on)=9.6 mΩ
10-25
IPP12CN10L G
RDS(on) =12.0 mΩ
BSZ146N10LS5
RDS(on) =14.6 mΩ
BSC123N10LS G
RDS(on) =12.3 mΩ
IRLR3110ZTRPBF
RDS(on) =14.0 mΩ
BSZ150N10LS3 *
RDS(on) =15.0 mΩ
BSC146N10LS5
RDS(on) =14.6 mΩ
>25
IRL100HS121
RDS(on)=42.0 mΩ
BSC265N10LSF G
RDS(on) =26.5 mΩ
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OptiMOS™ and StrongIRFET™ 120V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 PQFN 3.3 x 3.3 SuperSO8
2-4
IPB038N12N3 G
RDS(on) =3.8 mΩ
IPB036N12N3 G
RDS(on) =3.6 mΩ
4-10
IPI041N12N3 G
RDS(on) =4.1 mΩ
IPP041N12N3 G
RDS(on) =4.1 mΩ
BSC077N12NS3 G
RDS(on) =7.7 mΩ
IPP048N12N3 G
RDS(on) =4.8 mΩ
BSC080N12LS *
RDS(on) =8.0 mΩ
IPI076N12N3 G
RDS(on) =7.6 mΩ
IPP076N12N3 G
RDS(on) =7.6 mΩ
10-25
IPD110N12N3 G
RDS(on) =11.0 mΩ
IPP114N12N3 G
RDS(on) =11.4 mΩ
BSC120N12LS *
RDS(on) =12.0 mΩ
IPB144N12N3 G
RDS(on) =14.4 mΩ
IPI147N12N3 G
RDS(on) =14.7 mΩ
IPP147N12N3 G
RDS(on) =14.7 mΩ
BSZ240N12NS3 G
RDS(on) =24.0 mΩ
BSC190N12NS3 G
RDS(on) =19.0 mΩ
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
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and input ICs
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2) 8 V rated (RDS(on) also specified @ VGS = 8 V)
3) Coming soon
5) 135 V
OptiMOS™ and StrongIRFET™ 135-150V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D²PAK 7-pin)
SuperSO8 TO-251
(IPAK)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
4-10
IPB048N15N5
RDS(on)=4.8 mΩ
IPB044N15N5
RDS(on)=4.4 mΩ
IPI051N15N5
RDS(on)=5.1 mΩ
IPP051N15N5 2)
RDS(on)=5.1 mΩ
IRF150P220
RDS(on)=2.5mΩ
IPB048N15N5LF
RDS(on)=4.8 mΩ
IRF135SA204 5)
RDS(on) =5.9 mΩ
IRF150P221
RDS(on)=4.8mΩ
IPB072N15N3 G
RDS(on) =7.2 mΩ
IPB060N15N5
RDS(on)= 6.0 mΩ
IPI075N15N3 G
RDS(on) =7.5 mΩ
IPP075N15N3 G
RDS(on) =7.5 mΩ
IRFP4568PBF
RDS(on) =5.9 mΩ
IPB073N15N5
RDS(on)=7.3 mΩ
IPB065N15N3 G
RDS(on) =6.5 mΩ
IPI076N15N5
RDS(on)=7.6 mΩ
IPP076N15N5
RDS(on)=7.6 mΩ
IPA075N15N3 G
RDS(on) =7.5 mΩ
IPB083N15N5LF
RDS(on)=8.3 mΩ
IRF135S203 5)
RDS(on) =8.4 mΩ
IRF135B203 5)
RDS(on) =8.4 mΩ
IRFB4115PBF
RDS(on) =11.0 mΩ
10-25
IPB108N15N3 G
RDS(on) =10.8 mΩ
IRFS4115TRL7PP
RDS(on) =11.8 mΩ
IPI111N15N3 G
RDS(on) =11.1 mΩ
IPP111N15N3 G
RDS(on) =11.1 mΩ
IPA105N15N3 G
RDS(on) =10.5 mΩ
IRFS4321
RDS(on) =15.0 mΩ
IRFS4321TRL7PP
RDS(on) =14.7 mΩ
IRFB4321PBF
RDS(on) =15.0 mΩ
IRFP4321PBF
RDS(on) =15.5 mΩ
IRFS4115TRLPBF
RDS(on) =12.1 mΩ
IRFB4228PBF
RDS(on) =15.0 mΩ
IPD200N15N3 G
RDS(on) =20.0 mΩ
IPB200N15N3 G
RDS(on) =20.0 mΩ
IPP200N15N3 G 2)
RDS(on) =20.0 mΩ
>25
IRFS4615PBF
RDS(on) =42.0 mΩ
IRFH5015TRPBF
RDS(on) =31.0 mΩ
IRFB4615PBF
RDS(on) =39.0 mΩ
IRFR4615
RDS(on) =42.0 mΩ
IRFS5615PBF
RDS(on) =42.0 mΩ
IRFU4615PBF
RDS(on) =42.0 mΩ
IRFB5615PBF
RDS(on) =39.0 mΩ
IPD530N15N3 G
RDS(on) =53.0 mΩ
IPB530N15N3 G
RDS(on) =53.0 mΩ
IRFH5215TRPBF
RDS(on) =58.0 mΩ
IPI530N15N3 G 2)
RDS(on) =53.0 mΩ
IPP530N15N3 G 2)
RDS(on) =53.0 mΩ
IRFB4019PBF
RDS(on) =95.0 mΩ
Product portfolio
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OptiMOS™ and StrongIRFET™ 135-150V normal level
RDS(on), max.
@VGS=10V
[mΩ]
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
4-10
BSC074N15NS5 3)
RDS(on) =7.4 mΩ
IPT059N15N3
RDS(on) = 5.9 mΩ
BSC093N15NS5
RDS(on) =9.3 mΩ
10-25
IRF7779L2TRPBF 5)
RDS(on) =11.0 mΩ
BSC110N15NS5
RDS(on) =11.0 mΩ
BSC160N15NS5
RDS(on) =16.0 mΩ
BSB165N15NZ3 G
RDS(on) =16.5 mΩ
BSC190N15NS3 G
RDS(on) =19.0 mΩ
>25
BSB280N15NZ3 G
RDS(on) =28.0 mΩ
BSZ300N15NS5
RDS(on) =30.0 mΩ
BSC360N15NS3 G
RDS(on) =36.0 mΩ
IRF6643TRPBF
RDS(on) =34.5 mΩ
BSZ520N15NS3 G
RDS(on) =52.0 mΩ
BSC520N15NS3 G
RDS(on) =52.0 mΩ
IRF6775MTRPBF
RDS(on) =56.0 mΩ
BSZ900N15NS3 G
RDS(on) =90.0 mΩ
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2) 220 V rated
4) Part qualified according to AEC Q101
OptiMOS™ and StrongIRFET™ 200V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
4-10
IRF200P222
RDS(on)=6.6 mΩ
IRFP4668PBF
RDS(on) =9.7 mΩ
10-25
IPB107N20N3 G
RDS(on) =10.7 mΩ
IPI110N20N3 G
RDS(on) =11.0 mΩ
IPP110N20N3 G
RDS(on) =11.0 mΩ
IRF200P223
RDS(on)=11.5 mΩ
IPB107N20NA 4)
RDS(on) =10.7 mΩ
IPP110N20NA
RDS(on) =11.0 mΩ
IPB110N20N3LF
RDS(on)=11.0 mΩ
IPP120N20NFD
RDS(on) =12.0 mΩ
IRFP4127PBF
RDS(on) =21.0 mΩ
IPB117N20NFD
RDS(on) =11.7 mΩ
IRFB4127PBF
RDS(on) =20.0 mΩ
IRFP4227PBF
RDS(on) =25.0 mΩ
IPB156N22NFD 2)
RDS(on) =15.6 mΩ
IRFS4127TRLPBF
RDS(on) =22.0 mΩ
>25 IRFS4227TRLPBF
RDS(on) =26.0 mΩ
IRFB4227PBF
RDS(on) =26.0 mΩ
IPA320N20NM3S
RDS(on) =32.0 mΩ
IPD320N20N3 G
RDS(on) =32.0 mΩ
IPB320N20N3 G
RDS(on) =32.0 mΩ
IPI320N20N3 G
RDS(on) =32.0 mΩ
IPP320N20N3 G
RDS(on) =32.0 mΩ
IRFI4020H-117P
RDS(on) =100 mΩ, HB
IRFB4620PBF
RDS(on) =72.5 mΩ
IRFR4620TRLPBF
RDS(on) =78.0 mΩ
IRFS4620TRLPBF
RDS(on) =78.0 mΩ
IRFB5620PBF
RDS(on) =72.5 mΩ
IRFS4020TRLPBF
RDS(on) =105.0 mΩ
IRFB4020PBF
RDS(on) =100.0 mΩ
IRF200B211
RDS(on) =170.0 mΩ
Product portfolio
www.infineon.com/powermosfet-12V-300V
OptiMOS™ and StrongIRFET™ 200V normal level
RDS(on), max.
@VGS=10V
[mΩ]
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 TO-Leadless
10-25 BSC220N20NSFD
RDS(on)=22.0 mΩ
IPT111N20NFD
RDS(on)=11.1 mΩ
>25 BSC320N20NS3 G
RDS(on) =32.0 mΩ
BSC350N20NSFD
RDS(on)=35.0 mΩ
BSC500N20NS3G
RDS(on) =50.0 mΩ
IRF6641TRPBF
RDS(on) =59.9 mΩ
IRFH5020
RDS(on) =55.0 mΩ
BSZ900N20NS3 G
RDS(on) =90.0 mΩ
BSC900N20NS3 G
RDS(on) =90.0 mΩ
IRF7820TRPBF
RDS(on) =78.0 mΩ
IRF6785TRPBF
RDS(on) =100.0 mΩ
BSZ12DN20NS3 G
RDS(on) =125.0 mΩ
BSC12DN20NS3 G
RDS(on) =125.0 mΩ
BSZ22DN20NS3 G
RDS(on) =225.0 mΩ
BSC22DN20NS3 G
RDS(on) =225.0 mΩ
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
112
For more details on the product,
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OptiMOS™ and StrongIRFET™ 250V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247 PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
10-25
IPB200N25N3 G
R
DS(on)
=20.0 mΩ
IPI200N25N3 G
R
DS(on)
=20.0 mΩ
IPP200N25N3 G
R
DS(on)
=20.0 mΩ
IRF250P224
R
DS(on)
=12.0 mΩ
IPP220N25NFD
R
DS(on)
=22.0 mΩ
IRFP4768PBF
R
DS(on)
=17.5 mΩ
IPT210N25NFD
R
DS(on)
=21.0 mΩ
IRF250P225
R
DS(on)
=22.0 mΩ
>25
BSC430N25NSFD
R
DS(on)
=43.0 mΩ
IRFS4229TRLPBF
R
DS(on)
=48.0 mΩ
IRFB4332PBF
R
DS(on)
=33.0 mΩ
IRFP4332PBF
R
DS(on)
=33.0 mΩ
BSC600N25NS3 G
R
DS(on)
=60.0 mΩ
IPD600N25N3 G
R
DS(on)
=60.0 mΩ
IPB600N25N3 G
R
DS(on)
=60.0 mΩ
IPI600N25N3 G
R
DS(on)
=60.0 mΩ
IRFB4229PBF
R
DS(on)
=46.0 mΩ
BSC670N25NSFD
R
DS(on)
=67.0 mΩ
IPP600N25N3 G
R
DS(on)
=60.0 mΩ
IPA600N25NM3S
R
DS(on)
=60.0 mΩ
IRFP4229PBF
R
DS(on)
=46.0 mΩ
BSZ16DN25NS3 G
R
DS(on)
=165.0 mΩ
IRFH5025
R
DS(on)
=100.0 mΩ
BSZ42DN25NS3 G
R
DS(on)
=425.0 mΩ
BSC16DN25NS3 G
R
DS(on)
=165.0 mΩ
OptiMOS™ and StrongIRFET™ 300V normal level
RDS(on), max.
@
VGS=10V
[mΩ]
TO-263
(D2PAK)
TO-220 TO-247 SuperSO8
0-25
IRF300P226
RDS(on)=19.0 mΩ
>25
IPB407N30N
RDS(on) =40.7 mΩ
IPP410N30N
RDS(on) =41.0 mΩ
IRFP4868PBF
RDS(on) =32.0 mΩ
IRF300P227
RDS(on)=40.0 mΩ
IRFB4137PBF
RDS(on) =69.0 mΩ
IRFP4137PBF
RDS(on) =69.0 mΩ
BSC13DN30NSFD
RDS(on)=130.0 mΩ
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Product portfolio
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Power MOSFETs complementary
Voltage
[V]
PQFN 3.3 x 3.3 SO-8
Complementary
-20/20 >50 mΩ
BSZ15DC02KD H */ * *
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
BSZ215C H */ * *
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
-60/60 11-30 Ω
BSO612CV G *
N: 0.12 Ω, 3.0 A
P: 0.30 Ω, -2.0 A
BSO615C G *
N: 0.11 Ω, 3.1 A
P: 0.30 Ω, -2.0 A
*Products are qualified to Automotive AEC Q101
* *RDS(on) specified at 4.5 V
www.infineon.com/complementary
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
114
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Product portfolio
* Products are qualified to Automotive AEC Q101
* *RDS(on) specified at 4.5 V
* * * For more information on the product, contact our product support
1)
5-leg
2)
2.5 V
GS
capable
Power P-channel MOSFETs
Voltage
[V]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 PQFN 2 x 2
P-channel MOSFETs
-20
BSO201SP H
RDS(on) =7.0 mΩ
BSO203SP H
RDS(on) =21.0 mΩ
BSO203P H
RDS(on) =21.0 mΩ
IRLHS2242TRPBF * *
RDS(on) =31.0 mΩ
BSO207P H
RDS(on) =45.0 mΩ
BSO211P H
RDS(on) =67.0 mΩ
-30
BSC030P03NS3 G
RDS(on) =3.0 mΩ
IRF9310
RDS(on)=4.6 mΩ
IPD042P03L3 G
RDS(on) =4.2 mΩ
BSC060P03NS3E G
RDS(on) =6.0 mΩ; ESD
IRF9317
RDS(on)=6.6 mΩ
BSZ086P03NS3 G
RDS(on) =8.6 mΩ
IRF9321
RDS(on)=7.2 mΩ
SPD50P03L G 1) *
RDS(on) =7.0 mΩ
IRF9395M
RDS(on)=7.0 mΩ; dual
BSZ086P03NS3E G
RDS(on) =8.6 mΩ
BSO080P03NS 3 G
RDS(on) =8.0 mΩ
BSC084P03NS3 G
RDS(on) =8.4 mΩ
BSO080P03NS3E G
RDS(on) =8.0 mΩ; ESD
BSC084P03NS3E G
RDS(on) =8.4 mΩ; ESD
BSO080P03S H
RDS(on) =8.0 mΩ
BSZ120P03NS3 G
RDS(on) =12.0 mΩ
BSO301SP H
RDS(on) =8.0 mΩ
BSZ120P03NS3E G
RDS(on) =12.0 mΩ; ESD
IRF9328
RDS(on)=11.9 mΩ
IRF9388TRPBF
RDS(on)=11.9 mΩ
BSO130P03S H
RDS(on) =13.0 mΩ
IRF9358
RDS(on)=16 mΩ; dual
IRFHM9331
2)
RDS(on)=15 mΩ
IRF9332
RDS(on)=17.5 mΩ
IRF9392TRPBF * * *
RDS(on)= 17.5 mΩ
BSZ180P03NS3 G
RDS(on) =18.0 mΩ
IRF9333
RDS(on)=19.4 mΩ
BSZ180P03NS3E G
RDS(on) =18.0 mΩ; ESD
BSO200P03S H
RDS(on) =20.0 mΩ
BSO303SP H
RDS(on) =21.0 mΩ
IRFH9301TRPBF * * *
RDS(on) =37.0 mΩ
BSO303P H
RDS(on) =21.0 mΩ; dual
IRF9362
RDS(on)=21 mΩ; dual
IRFHS9351TRPBF
RDS(on) =170.0 mΩ; dual
IRF9335
RDS(on)=59 mΩ
-60
IPD380P06NM
RDS(on)= 38 mΩ
IPB110P06LM
RDS(on)= 11 mΩ
SPP80P06P H *
RDS(on) =23.0 mΩ
IPD650P06NM
RDS(on)= 65 mΩ
SPB80P06P G *
RDS(on) =23.0 mΩ
SPD30P06P G *
RDS(on) =75.0 mΩ
IPD900P06NM
RDS(on) = 90 mΩ
SPD18P06P G *
RDS(on) =130.0 mΩ
SPB18P06P G *
RDS(on) =130.0 mΩ
SPP18P06P H *
RDS(on) =130.0 mΩ
BSO613SPV G *
RDS(on) =130.0 mΩ
SPD09P06PL G *
RDS(on) =250.0 mΩ
IPD25DP06LM
RDS(on) = 250 mΩ
IPD25DP06NM
RDS(on) = 250 mΩ
SPD08P06P G *
RDS(on) =300.0 mΩ
SPB08P06P G *
/
* * *
RDS(on) =300.0 mΩ
SPP08P06P H *
RDS(on) =300.0 mΩ
IPD40DP06NM
RDS(on) = 400 mΩ
-100
SPD15P10PL G *
RDS(on) =200.0 mΩ
SPP15P10PL H *
RDS(on) =200.0 mΩ
SPD15P10P G *
RDS(on) =240.0 mΩ
SPP15P10P H *
RDS(on) =240.0 mΩ
SPD04P10PL G *
RDS(on) =850.0 mΩ
SPD04P10P G *
RDS(on) =1000.0 mΩ
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Product portfolio
Small signal/small power N-channel
Voltage
[V]
SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
N-channel
20
BSR802N
23 mΩ, 3.7 A, ULL
IRLML6244 * 1)
21 mΩ, 6.3 A, LL
BSL202SN
22 mΩ, 7.5 A, SLL
BSR202N
21 mΩ, 3.8 A, SLL
IRLML2502 * 1)
45 mΩ, 4.2 A, SLL
IRLMS2002 * 1)
30 mΩ, 6.5 A, SLL
IRLML6246 * 1)
46 mΩ, 4.1 A, LL
BSS205N
50 mΩ, 2.5 A, SLL
BSD214SN
140 mΩ, 1.5 A, SLL
BSS806NE
57 mΩ, 2.3 A, ULL, ESD
BSL806N **
82 mΩ, 2.3 A, ULL
BSS806N
57 mΩ, 2.3 A, ULL
BSS214NW
140 mΩ, 1.5 A, SLL
BSD235N
350 mΩ, 0.95 A, SLL, dual
IRLMS1902 * 1)
100 mΩ, 3.2 A, SLL
BSS214N
140 mΩ, 1.5 A, SLL
BSS816NW
160 mΩ, 1.4 A, ULL
BSD840N
400 mΩ, 0.88 A, ULL, dual
IRLML2402 * 1)
250 mΩ, 1.2 A, SLL
25
IRFML8244 *
24 mΩ, 5.8 A, NL
30
IRLTS6342 * 1)
17.5 mΩ, 8.3 A, LL
IRLML0030 *
27 mΩ, 5.3 A, LL
BSD316SN
160 mΩ, 1.4A, LL
IRFTS8342 *
19 mΩ. 8.2 A, NL
IRLML6344 * 1)
29 mΩ, 5.0 A, LL
BSS306N
57 mΩ, 2.3 A, LL
IRLML6346 * 1)
63 mΩ, 3.4 A, LL
IRLMS1503 *
100 mΩ, 3.2 A, LL
IRLML2030 *
100 mΩ, 1.4 A, LL
BSS316N
160 mΩ, 1.4 A, LL
IRLML2803 *
250 mΩ, 1.2 A, LL
55
IRLML0040TRPBF *
56 mΩ,3.6 A, LL
BSS670S2L
650 mΩ, 0.54 A, LL
BSS340NW
400 mΩ, 0.88 A, LL
60
BSP318S
90 mΩ, 2.6 A, LL
BSL606SN
60 mΩ, 4.5 A, LL
BSS606N
60 mΩ, 3.2 A, LL
IRLML0060 *
92 mΩ, 2.7 A, LL
BSS138W
3.5 Ω, 0.28 A, LL
2N7002DW
3 Ω, 0.3 A, LL, dual
BSP320S
120 mΩ, 2.9 A, NL
IRLML2060 *
480 mΩ, 1.2 A, LL
SN7002W
5 Ω, 0.23 A, LL
BSP295
300 mΩ, 1.8 A, LL
BSS138N
3.5 Ω, 0.23 A, LL
BSS7728N
5 Ω, 0.2 A, LL
SN7002N
5 Ω, 0.2 A, LL
2N7002
3 Ω, 0.3 A, LL
BSS159N
8 Ω, 0.13 A, depl.
75
BSP716N
160 mΩ, 2.3 A, LL
100
BSP372N
230 mΩ, 1.8 A, LL
IRLML0100 *
220 mΩ, 1.6 A, LL
BSP373N
240 mΩ, 1.8 A, NL
BSS119N
6 Ω, 0.19 A, LL
VGS(th) 1.8 V to 2.3 V
BSP296N
600 mΩ, 1.2 A, LL
BSS123N
6 Ω, 0.19 A, LL
VGS(th) 0.8 V to 1.8 V
BSS169
12 Ω, 0.09 A, depl.
150
IRF5802 *
1.2 mΩ, 0.9 A, NL
200
BSP297
1.8 Ω, 0.66 A, LL
IRF5801 *
2.2 mΩ, 0.6 A, NL
BSP149
3.5 Ω,0.14 A, depl.
240
BSP88
6 Ω, 0.35 A, 2.8 V rated
BSS87
6 Ω, 0.26 A, LL
BSS131
14 Ω, 0.1 A, LL
BSP89
6 Ω, 0.35 A, LL
BSP129
6 Ω, 0.05 A, depl.
250
BSS139
30 Ω, 0.03 A, depl.
400
BSP324
25 Ω, 0.17 A, LL
500
600
BSP125
45 Ω, 0.12 A, LL
BSS225
45 Ω, 0.09 A, LL
BSS127
500 Ω, 0.023 A, LL
BSP135
60 Ω, 0.02 A, depl.
BSS126
700 Ω, 0.007 A, depl.
800
All products are qualified to Automotive AEC Q101 (except 2N7002) (except the parts marked with *)
1) RDS(on) specified at 4.5 V
** For more information on the product, contact our product support
www.infineon.com/smallsignal
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
116
For more details on the product,
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All products are qualified to Automotive AEC Q101 (except the parts marked with *)
1)
RDS(on) 4.5 V rated
Small signal/small power P-channel
Voltage
[V]
SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
P-channel MOSFETs
-250
BSP317P
4 Ω, -0.43 A, LL
BSS192P
12 Ω, -0.19 A, LL
BSR92P
11 Ω, -0.14 A, LL
BSP92P
12 Ω, -0.26 A, LL
-100
BSP321P
900 mΩ, -0.98 A, NL
BSP322P
800 mΩ, -1.0 A, LL
BSP316P
1.8 Ω, -0.68 A, LL
BSR316P
1.8 Ω, -0.36 A, LL
-60
ISP650P06NM
65 mΩ, -3.7 A, NL
ISS17EP06LM
1.7Ω, -0.3 A, LL
ISP12DP06NM
125 mΩ, -2.8 A, NL
BSS83P
2 Ω, -0.33 A, LL
BSS84PW
8 Ω, -0.15 A, LL
ISP13DP06NMS
125 mΩ, -2.8 A, NL
ISS55EP06LM
5.5 Ω, -0.18 A, NL
BSP613P
130 mΩ, 2.9 A, NL
ISP25DP06LM
250 mΩ, -1.9 A, LL
BSS84P
8 Ω, -0.17 A, LL
ISP25DP06NM
250 mΩ, -1.9 A, NL
ISP25DP06LMS
250 mΩ, -1.9 A, LL
BSR315P
800 mΩ, -0.62 A, LL
ISP26DP06NMS
260 mΩ, -1.9 A, NL
BSP171P
300 mΩ, -1.9 A, LL
BSP170P
300 mΩ, -1.9 A, NL
ISP75DP06LM
750 mΩ, -1.1 A, LL
BSP315P
800 mΩ, -1.17 A, LL
-40
IRF5803TRPBF *
112 mΩ, -3.4 A, LL
-30
IRFTS9342TRPBF *
40 mΩ, -5.8 A, LL
IRLML9301TRPBF *
64 mΩ, -3.6 A, LL
BSD314SPE
140 mΩ, -1.5 A, LL, ESD
BSL307SP
43 mΩ, -5.5 A, LL
BSS308PE
80 mΩ, -2.1 A, LL, ESD
BSL308PE
80 mΩ, -2.1 A, LL,
dual, ESD
IRLML5203TRPBF *
98 mΩ, -3.0 A, LL
BSS314PE
140 mΩ, -1.5 A, LL, ESD
BSS315P
150 mΩ, -1.5 A, LL
IRLML9303TRPBF *
165 mΩ, -2.3 A, LL
IRLML5103TRPBF *
600 mΩ, -0.76 A, LL
-20
IRLTS2242 * 1)
32 mΩ, -6.9 A, SLL
BSL207SP 1)
41 mΩ, -6 A, SLL
IRLML2244 * 1)
54 mΩ, 4.3 A, LL
IRLMS6802 * 1)
50 mΩ, -5.6 A, SLL
IRLML6402 * 1)
65 mΩ, -3.7 A, SLL
BSS209PW 1)
550 mΩ, -0.58 A, SLL
BSV236SP 1)
175 mΩ, -1.5 A, SLL
BSL211SP 1)
67 mΩ, -4.7 A, SLL
IRLML2246 * 1)
135 mΩ, 2.6 A, LL
BSS223PW 1)
1.2 Ω, -0.39 A, SLL
BSD223P 1)
1.2 Ω, -0.39 A, SLL, dual
IRLMS6702 * 1)
200 mΩ, -2.4 A, SLL
BSS215P 1)
150 mΩ, -1.5 A, SLL
IRLML6302 * 1)
600 mΩ, -0.78 A, SLL
-12
IRLML6401 * 1)
50 mΩ, -4.3 A, SLL
Small signal/small power complementary
Voltage
[V]
TSOP-6 SOT-363
Complementary
-20/20
BSL215C
N: 140 mΩ, 1.5 A, SLL
P: 150 mΩ, 1.5 A, SLL
BSD235C
N: 350 mΩ, 0.95 A, SLL
P: 1.2 Ω, 0.53 A, SLL
-30/30
BSL308C
N: 57 mΩ, 2.3 A, LL
P: 80 mΩ, -2.0 A, LL
BSL316C
N: 160 mΩ, 1.4 A, LL
P: 150 mΩ, -1.5 A, LL
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For more details on the product,
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*RDS(on) typ. @VGS=4.5 V
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Product portfolio
Bare Die
V(BR)DSS Part number RDS(on) typ. @ VGS=10 V
Die Size X
Die Size Y Die Size Area
30 V
IPC042N03L3 * 0.83 mΩ 2.78 mm 1.53 mm 4.25 mm²
IPC055N03L3 * 2.7 mΩ 3.28 mm 1.68 mm 5.51 mm²
IPC028N03L3 * 5 mΩ 1.24 mm 2.26 mm 2.80 mm²
IPC022N03L3 * 5.3 mΩ 1.05 mm 2.1 mm 2.2 mm²
IPC014N03L3 * 10.3 mΩ 1.64 mm 0.84 mm 1.37 mm²
40 V IPC218N04N3 0.9 mΩ 5.9 mm 3.7 mm 21.83 mm²
60 V IPC218N06N3 1.3 mΩ 5.9 mm 3.7 mm 21.83 mm²
75 V IPC302NE7N3 1.2 mΩ 6.7 mm 4.5 mm 30.15 mm²
80 V IPC302N08N3 1.2 mΩ 6.7 mm 4.5 mm 30.15 mm²
100 V
IPC302N10N3 1.7 mΩ 6.7 mm 4.5 mm 30.15 mm²
IPC313N10N3R 1.9 mΩ 6 mm 5.2 mm 31.26 mm²
IPC26N10NR 3.2 mΩ 6 mm 4.36 mm 26.16 mm²
IPC173N10N3 3.6 mΩ 5.76 mm 3 mm 17.28 mm²
IPC045N10N3 15.2 mΩ 2.5 mm 1.8 mm 4.5 mm²
IPC045N10L3 * 16 mΩ 2.5 mm 1.8 mm 4.5 mm²
IPC020N10L3 * 42 mΩ 2.12 mm 0.96 mm 2.04 mm²
120 V
IPC302N12N3 2.5 mΩ 6.7 mm 4.5 mm 30.15 mm²
IPC26N12N 3 mΩ 6.6 mm 3.96 mm 26.13 mm²
IPC26N12NR 3.2 mΩ 6 mm 4.36 mm 26.16 mm²
150 V
IPC331N15NM5R 2.9 mΩ 7.05 mm 4.7 mm 33.14 mm²
IPC302N15N3 4.9 mΩ 6.7 mm 4.5 mm 30.15 mm²
IPC300N15N3R 4.9 mΩ 6 mm 5 mm 30 mm²
200 V
IPC300N20N3 9.2 mΩ 6 mm 5 mm 30 mm²
IPC302N20N3 9.2 mΩ 6.7 mm 4.5 mm 30.15 mm²
IPC302N20NFD 9.4 mΩ 6.7 mm 4.5 mm 30.15 mm²
250 V
IPC302N25N3 16 mΩ 6.7 mm 4.5 mm 30.15 mm²
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
118
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StrongIRFET™ nomenclature
Nomenclature
OptiMOS™
L
BSC 014 NG
S
03
RDS(on) [mΩ]
Divide by 10 to get RDS(on)
value e.g. 014 = 1.4 mΩ
However, if the sixth character
is a C, the fourth and the fifth
character indicate the RDS(on)
e.g. 12C = 12 mΩ
For chip products chip area
in mm2 multiplied by 10
Breakdown voltage [V]
Multiply by 10 to get
voltage class e.g. 03 = 30
V
E
= Extended, +5 V, e.g. E2 = 25 V
N = N-channel
P = P-channel
C = Complementary
RoHS compliant
Level
N = Normal level (NL) 10.0
M = Logic level 5 V opt. (LL) 4.5
L = Logic level (ELL) 4.5
K = Super logic level (SLL) 2.5
J = Ultra logic level (ULL) 1.8
Package options
SO-8/SuperSO8/PQFN 3.3 x 3.3/PQFN 2 x 2
S = Single chip
D = Dual chip
DirectFET™
X = MX footprint
N = MN footprint
Z = MZ footprint
Q = SQ footprint
T = ST footprint
H = SH footprint
J = SJ footprint
3 = Technology generation
I = Monolithically integrated
Schottky-like diode
FD = Fast diode
LF = Linear mode capability
XE
Features
F = Fast switching
R = Integrated gate
resistor
E = ESD protection
A = Qualified according to AEC Q101
to be used from V
GS
Package type
BSB = DirectFET™
(M Can)
BSC = SuperSO8
BSF = DirectFET™
(S Can)
BSK = PQFN 2 x 2
BSO = SO-8
BSZ = PQFN 3.3 x 3.3
IPA = FullPAK
SPB/IPB = D2PAK
IPC = Chip product
SPD/IPD = DPAK
IPI = I2PAK
SPP/IPP = TO-220
IPS = IPAK Short Leads
IPT = TO-Leadless
OptiMOS™ 30V
P
ackage type
Consecutive number
without any c
orrelation
to
product specification
Channels
N
= N-channel
P
= P-channel
D = Dual
E = ESD
S = Single
I = Monolithically
integrated
Schottky-lik
e diode
BSC 0901 N X I
119
For more details on the product,
click on the part number.
StrongIRFET™ (from May 2015 to 2019)
Drive volt
age
F
= 4.5 VGS capable for BV ≤ 30 V
L
= 2.5 VGS capable for BV ≤ 30 V, 4.5 VGS capable for BV ≥ 40 V
2
to 3 digit voltage
F
or example:
25
= 25 V
135
= 135 V
Package
1 or 2 letters
B = TO-220
BA = Super220
C = Bare die or wafer
DL = DirectFET™ 1.5 Large Can
DM = DirectFET™ 1.5 Medium Can
Can DS = DirectFET
™ 1.5 Small Can
Can FF = TO-220 FullPAK
H = PQFN 5 x 6
HB = Power Block 5 x 6
HM = PQFN 3.0 x 3.0 or 3.3 x 3.3
HS = PQFN 2 x 2
I = TO-220 FullPAK
K = SO-8
L = SOT-223
ML = SOT-23
P = TO-247
PS = Super247
R = DPAK
S = D2PAK
SL = TO-262
SA = D2 7-pin with pin 2 void
SN = D2 7-pin with pins void
SC = D2 7-pin with pin 4 void
T = TollFET
TS = TSOP-6
U = IPAK
3 sequential digits
3 digits issued sequentially
IR F135 SA 204
Small signal
“X” indicates the packag
e
D
= SOT-363
P
= SOT-223
R
= SC59
S
= SOT-89, SOT-23, SOT-323
L
= TSOP-6
3 digits product identifier
me
aning dependent on
product g
eneration
Only present in following case
S
= Single (only for packages which
are also used for multichip products)
Polarity
N = N-channel
P = P-channel
C = Complementary
(N-ch + P-ch)
Only present in following case
W =
to distinguish SOT-323 from SOT
-23
Additional features
E = ESD protected MOSFET
BSX J1YJ
2Z
OptiMOS™ nomenclature
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
120
For more details on the product,
click on the part number.
New Nomenclature 2019 onward
New nomenclature for OptiMOS™ and StrongIRFET™ MOSFETs (2019 onward)
I LSC IN010 25
Package type
SC = SuperSO8
SD = SOT-363
SL = TSOP-6
SK = PQFN 2x2
SO = SO-8
SP = SOT-223
SQ = CE2
SR = SC59
SS = SOT-89, SOT-23, SOT-323
ST = sTOLL
SZ = PQFN 3.3 x 3.3
PA = TO-220 FullPAK
PB = D²PAK
PC = Chip Product
PD = DPAK
PF = D2PAK-7Pin
PI = I²PAK
PP = TO-220
PS = IPAK Short Leads
PT = TO-Leadless
PW = TO-247
QA = PQFN 4.5x4
QB = PQFN 3x2
QC = PQFN 3x5
QD = PQFN 5x6 Source-Down
QE = PQFN 3.3 x 3.3 Source-Down
WS = DirectFET™ (S)
WM = DirectFET™ (M)
WL = DirectFET™ (L)
Breakdown voltage [V]
Divide by 10
e.g. E2 = 25 V
10 = 100 V
25 = 250 V
Level To be used for VGS
N = Normal level (NL) 10.0 V
L = Logic level (LL) 4.5 V
M = Logic level 5 V opt. (ELL) 4.5 V
K = Super logic level (SLL) 2.5 V
J = Ultra logic level (ULL) 1.8 V
Features
D = Dual
H = Halfbridge
M|F… Product brand – family
(M.. OptiMOS™, F…StrongIRFET™)
3 = Marketing generation with
branding strategy
CG = Center gate
E = ESD protection
F = Fast switchingFD = Fast diode
SC = Super Cool
I = Monolithically integrated
Schottky like diode
LF = Linear mode
R = Integrated gate resistor
Last letter: requirement category:
A = Qualified according to AECQ 101
S = Standard
None = Industrial
Infineon
RDS(on) [mΩ]
Divide by 10 to get RDS(on) value
e.g. 012 = 1.2 mΩ
However, if the sixth character
is D or E the fourth and the fih
characters indicate the RDS(on) e.g.
12D = 120 mΩ
12E = 1200 mΩ
For chip products chip area in
mm2 multiplied by 10
Version
N = N-channel
P = P-channel
C = Complementary
G = GaN
121
For more details on the product,
click on the part number.
Further information, data sheets and documents
www.infineon.com/powermosfet-12V-300V
www.infineon.com/smallsignal
www.infineon.com/pchannel
www.infineon.com/depletion
www.infineon.com/complementary
www.infineon.com/baredie
Evaluation boards and simulation models
www.infineon.com/to-leadless-evaluationboard
www.infineon.com/powermosfet-simulationmodels
Infineon support for low voltage MOSFETs
Useful links and helpful information
Simulation
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
122
500-950 V MOSFETs
For more details on the product,
click on the part number.
› CoolMOS™ SJ MOSFETs
› 950 V CoolMOS™ P7 SJ MOSFETs
› 800 V CoolMOS™ P7 SJ MOSFETs
› 700 V CoolMOS™ P7 SJ MOSFETs
› 600 V CoolMOS™ P7 SJ MOSFETs
› 600 V CoolMOS™ PFD7 SJ MOSFETs
› 600 V and 650 V CoolMOS™ C7 and
C7 Gold (G7) SJ MOSFETs
500-950 V MOSFETs
› 600 V CoolMOS™ S7 SJ MOSFETs
› 600 V CoolMOS™ CFD7 SJ MOSFETs
› CoolMOS™ CE SJ MOSFETs
› CoolMOS™ SJ MOSFETs – package innovations
› CoolMOS™ SJ MOSFETs for automotive
› CoolMOS™ product portfolio
123
For more details on the product,
click on the part number.
› 600 V CoolMOS™ S7 SJ MOSFETs
› 600 V CoolMOS™ CFD7 SJ MOSFETs
› CoolMOS™ CE SJ MOSFETs
› CoolMOS™ SJ MOSFETs – package innovations
› CoolMOS™ SJ MOSFETs for automotive
› CoolMOS™ product portfolio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
124
For more details on the product,
click on the part number.
CoolMOS™ SJ MOSFETs
Trusted leader in high voltage MOSFETs
High voltage superjunction MOSFETs address consumer applications, such as smartphone/tablet chargers, notebook
adapters, LED lighting, PC power, as well as audio and TV power supplies. Customers are increasingly replacing
standard MOSFETs with superjunction MOSFETs to benefit from higher eiciency and lower power consumption
for end users. CoolMOS™ P7 sets a new benchmark by oering high performance and competitive price all at once.
CoolMOS™ PFD7 as brand new series shis the state-of-the-art for high density chargers/adapters as well as low-power
motor drives.
Also for industrial applications such as server, telecom, PC power, solar, UPS, EV-charging and others, Infineon’s latest
CoolMOS™7 superjunction MOSFETs with C7, G7, CFD7 and P7 product families oer what you need - from highest
eiciency to best price performance. Complementary to the silicon CoolMOS™ portfolio, Infineon oers a broad wide
bandgap (WBG) portfolio of CoolGaN™ e-mode HEMTs and CoolSiC™ MOSFETs to further optimize eiciency and
system cost (see pages 154-172).
Infineon’s industrial- and consumer-qualified CoolMOS™ superjunction MOSFET oering is complemented by the
automotive qualified series 600 V CPA,
650 V CFDA, 800 V C3A and our latest 650 V CFD7A. Gain your momentum in the
rapidly growing on-board charger and DC-DC converter markets with our excellent performing automotive series with
proven outstanding quality standards that go well beyond AEC Q101.
The revolutionary CoolMOS™ power MOSFET sets new standards in the field of energy eiciency. Our CoolMOS™
products oer a significant reduction of conduction, switching and driving losses, and enable high power density as
well as eiciency for superior power conversion systems.
www.infineon.com/coolmos
600 V P6
600 V CE
650/700 V CE
800 V C3
800 V CE
900 V C3
500 V CE
600 V P7
700 V P7 1)
800 V P7 1)
950 V P7 1)
650 V CFD2
600 V P6
650 V CFDA
600 V CPA
800 V C3A
600 V CFD7A
600 V CFD7
600 V P7
600/650 V C7
600/650 V G7
600 V S7
600 V PFD7
1) Optimized for flyback topologies
Price-performance
Highest performance
Fast recovery diode
Automotive
Slow switching
TimeTime
CoolMOS™ superjunction MOSFETs for industrial applications (>250 W) and automotive
CoolMOS™ superjunction MOSFETs for consumer applications (<400 W)
Active Active and preferred Active Active and preferred
CoolMOS™ SJ MOSFETs
CoolMOS™ low power package innovations
Click to learn more
CoolMOS™ high power package innovations
Click to learn more
125
For more details on the product,
click on the part number.
950 V CoolMOS™ P7 SJ MOSFETs
Perfect fit for PFC and flyback topologies
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7
technology focuses on the low-power SMPS market. The P7 family addresses applications ranging from lighting,
smart meter, mobile phone charger, notebook adapter, to AUX power supply and industrial SMPS. Oering 50 V
more blocking voltage than its predecessor 900 V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding
performance in terms of eiciency, thermal behavior and ease of use. As all other P7 family members, the
950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably
improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels.
CoolMOS™ P7 is developed with best-in-class threshold voltage (VGS(th)) of 3 V and a narrow tolerance of only ± 0.5 V,
which makes it easy to drive and design-in.
Compared to competition, the 950 V CoolMOS™ P7 delivers best-in-class eiciency and thermal performance. Plug-and-play
at 90 VAC in a 40 W adapter reference design, featuring the snubberless concept, demonstrates excellent eiciency gains
of up to 0.2 % and lower MOSFET temperature of up to 5.2°C compared to similar competitor technology. With over
20 years of experience in superjunction technology, Infineon introduces 950 V CoolMOS™ P7 with best-in-class DPAK
on-resistance (RDS(on)). This SMD device comes with the RDS(on) of 450 mΩ - more than 60% lower RDS(on) compared to the
nearest competitor. Such low RDS(on) value enables higher density designs while decreasing BOM and assembly cost.
www.infineon.com/950v-p7
Charger
Best-in-class DPAK RDS(on)
Customer benefits:
› Possible change from leaded to SMD packages
› High power density
› Lower BOM cost
› Lower production cost
1400
1200
1000
800
600
400
200
0
1250 mΩ 1200 mΩ
450 mΩ
Competitor CoolMOS™ C3 CoolMOS™ P7
R
DS(on)
[mΩ]
-65%
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
Pout [W]
Relative eiciency @ 90 VAC (ref: IPA95R450P7)
Eiciency [%]
65
60
55
50
45
40
35
30
25 5 10 15 20 25 30 35 40
5 10 15 20 25 30 35 40
Pout [W]
Temperature @ 90 VAC
Temperature [°C]
Δ 5.2°C
Δ 0.2%
IPA95R450P7 IPA90R500C3 Competitor IPA95R450P7 IPA90R500C3 Competitor
950 V CoolMOS™ P7 SJ MOSFETs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
126
For more details on the product,
click on the part number.
800 V CoolMOS™ P7 SJ MOSFETs
A benchmark in eiciency and thermal performance
With the 800 V CoolMOS™ P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines
best-in-class performance with the remarkable ease of use. This product family is a perfect fit for flyback-based
consumer and industrial SMPS applications. In addition, it is also suitable for PFC stages within consumer, as well as
solar applications, fully covering the market needs in terms of its price/performance ratio.
The technology oers fully optimized key parameters to deliver best-in-class eiciency as well as thermal performance.
As demonstrated on an 80 W LED driver, bought on the market, the >45 percent reduction in switching losses (Eoss)
and output capacitance (Coss) as well as the significant improvement in input capacitance (Ciss) and gate charge (QG),
compared to competitor technologies, lead to 0.5 percent higher eiciency at light load which helps to reduce standby
power in the end application. At full load, the observed improvement is up to 0.3 percent higher eiciency and 6°C
lower device temperature.
EMI is a system level topic, and the optimization needs to be done on the system level only. Nevertheless, a pure
plug-and-play measurement on Infineon's 45 W adapter reveals that 800 V CoolMOS™ P7 shows similar EMI
performance to Infineon’s previous technologies as well as to competitors’ technologies.
Compared to competition, the 800 V CoolMOS™ P7 technology allows to integrate much lower RDS(on) values into small
packages, such as a DPAK. This finally enables high power density designs at highly competitive price levels.
The complete P7 platform has been developed with an integrated Zener diode that is used as an electrostatic discharge (ESD)
protection mechanism, which increases the overall device ruggedness up to Human body model (HBM) class 2 level.
www.infineon.com/800V-p7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 10 20 30 40 50 60 70 80 90
Plug and play in an 80 W LED driver from market
Pout [W]
Relative eiciency [%]
CoolMOS™ P7
0.5%
0.3%
CoolMOS™ C3 Competitor 1 Competitor
2
60
50
40
30
20
10
0
30
CoolMOS™ C3
300
Frequency [MHz]
800 V CoolMOS™ exceptional EMI performance
CoolMOS™ P7 Competitor 1 Competitor 2
CoolMOS™ P7 sets a new benchmark
in best-in-class DPAK RDS(on)
Customer benefits:
› High power density
› Lower BOM cost
› Lower production cost
850 mΩ
Competitor 2
630 mΩ
Competitor 1
280 mΩ
CoolMOS™ P7
360 mΩ
CoolMOS™ P7
450 mΩ
CoolMOS™ P7
-56
%
Overview of lowest DPAK RDS(on) for 800 V superjunction MOSFET
800 V CoolMOS™ P7 SJ MOSFETs
127
For more details on the product,
click on the part number.
700 V CoolMOS™ P7 SJ MOSFETs
Our solution for flyback topologies
The 700 V CoolMOS™ P7 family has been developed to serve today’s and, especially, tomorrow’s trends in flyback
topologies. The family products address the low power SMPS market, mainly focusing on mobile phone chargers and
notebook adapters, but are also suitable for power supplies, used within lighting applications, home entertainment
(TV, game consoles or audio), and auxiliary power supplies. 700 V CoolMOS™ P7 achieves outstanding eiciency gains
of up to 4 percent and a decrease in device temperature of up to 16 K compared to competition. In contrast with the
previous 650 V CoolMOS™ C6 technology, 700 V CoolMOS™ P7 oers 2.4 percent gain in eiciency and 12 K lower device
temperature, measured at a flyback-based charger application, operated at 140 kHz switching speed.
Keeping the ease of use in mind, Infineon has developed
the technology with a low threshold voltage (VGS(th)) of
3 V and a very narrow tolerance of ±0.5 V. This makes the
CoolMOS™ P7 easy to design-in and enables the usage
of lower gate source voltage, which facilitates its driving
and leads to lower idle losses. To increase the ESD
ruggedness up to HBM class 2 level, 700 V CoolMOS™ P7
has an integrated Zener diode. This helps to support
increased assembly yield, leads to reduction of
production related failures and, finally, manufacturing
cost savings on customer side.
www.infineon.com/700V-p7
Charger
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
3.5
-4.0
-4.5
0.5 1.0 1.5 2.0 2.5
I
out
[A]
CoolMOS™ P7
Relative eiciency
@ 230 V
AC
; T
amb
=25°C
△ 4%
Relative temperature
@ 230 V
AC
; T
amb
=25°C, 30 min burn-in
△
Eiciency [%]
△
Temp [K]
13
16
5
18
16
14
12
10
8
6
4
2
0
CoolMOS™ C6
Competitor 1 Competitor 2
CoolMOS™ P7 CoolMOS™ C6
Competitor 1 Competitor 2
△ 1.5%
△ 16 K
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
CoolMOS™ P7 Comp. 1
Gate threshold voltage and tolerance
V
GSth
typ. [V]
Comp. 2 Comp. 3 Comp. 4 Comp. 5 Comp. 6
Features and benefits
Key benefits
Cost-competitive technology
Further eiciency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product
Key features
Highly performant technology
› Low switching losses (Eoss)
› Highly eicient
› Excellent thermal behavior
Allowing high speed switching
Integrated protection Zener diode
Optimized VGS(th) of 3 V with very narrow tolerance of ±0.5 V
Finely graduated portfolio
700 V CoolMOS™ P7 SJ MOSFETs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
128
For more details on the product,
click on the part number.
600 V CoolMOS™ P7 SJ MOSFETs
Perfect combination between high eiciency and ease of use
The 600 V CoolMOS™ P7 is a general purpose series, targeting a broad variety of applications, ranging from low power
SMPS up to the highest power levels. In the low power arena, it is the successor of the 600 V CoolMOS™ CE, and for
high power SPMS applications, it is the replacement for the 600 V CoolMOS™ P6, which makes it the perfect choice for
applications such as chargers, adapters, lighting, TV power supply, PC power supply, solar, small light electric vehicles,
server power supply, telecom power supply, and electric vehicle (EV) charging.
The 600 V CoolMOS™ P7 is Infineon’s most well-balanced CoolMOS™ technology in terms of combining the ease of use
and excellent eiciency performance. Compared to its predecessors, it oers higher eiciency and improved power
density due to the significantly reduced gate charge (QG) and switching losses (EOSS) levels, as well as optimized
on-state resistance (RDS(on)). The carefully selected integrated gate resistors enable very low ringing tendency and, thanks
to its outstanding robustness of body diode against hard commutation, it is suitable for hard as well as so switching
topologies, such as LLC. In addition, an excellent ESD capabilty helps to improve the quality in manufacturing. The 600 V
CoolMOS™ P7 familiy oers a wide range of on-resistance (RDS(on))/package combinations, including THD, as well as SMD
devices, at an RDS(on) granularity from 24 to 600 mΩ and comes along with the most competitive price/performance ratio
of all 600 V CoolMOS™ oerings.
Portfolio
Eiciency
CoolMOS™ P7 CoolMOS™ P6 CoolMOS™ C7
CoolMOS™ CE
Low ringing
Commutation
ruggedness
Pric
e competitiveness
ESD
www.infineon.com/600V-p7
Charger
Features and benefits
Key benefits
Ease of use and fast design-in through low ringing tendency and usage across PFC
and PWM stages
Improved eiciency and simplified thermal management due to low switching and
conduction losses
Higher manufacturing quality due to >2 kV ESD protection
Increased power density solutions enabled by using products with smaller footprint
Suitable for a wide variety of applications and power ranges
Key features
Suitable for hard and so switching (PFC and LLC) due to an outstanding
commutation ruggedness
Optimized balance between eiciency and ease of use
Significant reduction of switching and conduction losses leading to low
MOSFET temperature
Excellent ESD robustness >2 kV (HBM) for all products
Better RDS(on)/package products compared to competition
Large portfolio with granular RDS(on) selection qualified for a variety of
industrial and consumer applications
600 V CoolMOS™ P7 SJ MOSFETs
129
For more details on the product,
click on the part number.
600 V CoolMOS™ PFD7 SJ MOSFETs
The next level for ultrahigh power density designs
The 600 V CoolMOS™ PFD7 MOSFET series sets a new benchmark in 600 V Superjunction (SJ) technologies, suitable for
ultrahigh power density designs as well as low power motor drives. It combines best-in-class performance with ease of
use, built on Infineon’s superjunction technology innovation and more than 20 years of experience. The products come
with an integrated fast body diode ensuring a robust device and reduced bill-of-material (BOM).
This product family oers up to 1.17 % eiciency increase compared to the CoolMOS™ P7 technologies, which leads to a
power density increase of 1.8 W. This outstanding improvement is achieved by lower conduction and charge/discharge
losses, as well as reduced turn-o and gate-driving losses, enabled by pushing the cutting-edge CoolMOS™ technology to
new limits.
A broad range of RDS(on) values in combination with a variety of packages, helps in selecting the right part to optimize
designs. Furthermore, an integrated ESD protection of up to 2kV eliminates ESD related yield loss. At the same time,
especially our industry-leading SMD package oering contributes to BOM and PCB space savings and simplifies
manufacturing. This unique set of product features and their resulting benefits, position the CoolMOS™ PFD7
Superjunction MOSFET family exceptionally well for ultrahigh density applications like chargers and adapters, but also for
low-power drives and specific lighting applications.
600 V CoolMOS™ PFD7 increases eiciency in light-
and full-load conditions. This results in a power density
increase of 1.8 W for ultrahigh power chargers and
adapters.
600 V CoolMOS™ PFD7 provides up to 2% higher eiciency
at 100 W, which results in an 18°C thermal improvement.
Considering its excellent commutation ruggedness as well
as its low EMI, it is the perfect solution for low-power drives.
www.infineon.com/600V-PFD7
Features and benefits
Key benefits
+1.8 W / inch3 power density improvement compared to latest CoolMOS™
technologies used in charger applications
Supports smaller form factors and thinner designs
Up to 2% eiciency increase and 18°C improved thermal behavior compared to
CoolMOS™ CE for low-power drives applications
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select right parts for design fine-tuning
Key features
Very low FOM RDS(on) x Eoss
Extremely low switching losses
Integrated robust fast body diode
Up to 2 kV ESD protection
Wide range of RDS(on) values and broad package portfolio
Excellent communication ruggedness
Low EMI
Case temperature [°C]
Low-side MOSFET temperature
100 W motor drive at high line 230 VAC
"#$%!
70
80
60
50
CE
PFD7
= 18°C
IPD60R2K0PFD7S IPD50R2K0CE
= 1.17%
65 W delta eiciency @ 90 V
AC
input voltage
with IPAN60R125PFD7S as reference
P7
PFD7
Output current [A]
Eiciency increase [%]
0,5
0
- 0,5
- 1
- 1,5
0,5 11,5 2 2,5 3
3,5
IPAN60R125PFD7S
IPA60R120P7
= 0.35%
Charger
600 V CoolMOS™ PFD7
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
130
For more details on the product,
click on the part number.
www.infineon.com/c7
600 V and 650 V CoolMOS™ C7 and
C7 Gold (G7) SJ MOSFETs
Infineon’s Superjunction MOSFET series for highest eiciency
The 600 V and 650 V CoolMOS™ C7 and C7 Gold (G7)
Superjunction MOSFET series are designed to achieve
record level eiciency performance – they oer
substantial eiciency benefits over the whole load range
in hard switching applications compared to previous
series and competition. This is achieved by minimizing
switching losses via ultralow levels of switching losses
(EOSS) (approximately 50 percent reduction compared
to the CoolMOS™ CP), reduced gate charge (QG)
and a careful balance of other relevant product key
parameters. The low Eoss and QG also enable operation at
higher switching frequency and related size reduction of
the circuit magnetics.
The outstanding figures of merit (FOM) and the best-in-class on-state resistance (RDS(on)) oerings make the CoolMOS™ C7
and C7 Gold series key enablers for highest eiciency and power density. While the 650 V CoolMOS™ C7 and G7 (C7 Gold)
superjunction MOSFETs are solely designed for hard switching applications such as PFC, the 600 V version is also well
suited for high-end LLC stages due to its rugged body diode that withstands slew rates up to 20 V/ns. The product
portfolio contains TO-247 4-pin, ThinPAK 8x8, TO-Leadless and top-side cooled Double DPAK (DDPAK) packages which
come with additional Kelvin source contacts enabling further eiciency advantages over the classical 3-pin approach.
–50%
7
6
5
4
3
2
1
0
0 100 200 300 400
Drain source voltage VDS [V]
Reduction of EOSS
Stored energy EOSS [µJ]
GaN HEMTIPP60R180C7 IPP60R199CP
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
IPZ60R040C7
0 200 400 600 800 1.000 1.200
PFC CCM 1200 W eiciency dierence for 90 V
AC
(PFC CCM, 1.150 W @ 65 kHz)
Pout [W]
∆ Eiciency [%]
IPW60R040C7 IPW60R045CP
Average
0.7% 0.4%
CoolMOS™ CP CoolMOS™ C7 CoolMOS™ CP CoolMOS™ C7
65 kHz 130 kHz
1.9 2.8 2.1 2.9
2.1
3.0
0.1
0.1
0.1
0.2
7.1
4.7
6.6
12.4
0.8
6.0
1.5
2.1
1.0 4.1
CoolMOS™ CP
CoolMOS™ C7
Gate charge Turn-o Turn-on Conduction
MOSFET losses [W]
IPW60R045CP vs. IPZ60R060C7, highline 2.5 kW
Features and benefits
Key benefits
Increased eiciency in hard switching topologies such as PFC and TTF
Reduced size and cost of magnetic components by increased switching
frequency (e.g. 65 -130 kHz)
Increased power density by smaller packages for the same RDS(on)
Key features
Reduced switching loss parameters such as QG and Coss,
enabling higher switching frequency
50 percent Eoss reduction compared to older CoolMOS™ CP
Suitable for hard switching topologies (650 V and 600 V)
Suitable for high-end resonant (600 V only) topologies
600/650 V CoolMOS™
C7/G7 SJ MOSFETs
131
For more details on the product,
click on the part number.
www.infineon.com/s7
Features and benefits
Key benefits
Minimizes conduction losses
An easy step into Titanium level SMPS
Modular, more compact and easier designs
Eliminates or reduces heat sink in solid state relays and circuit breakers
Lower TCO cost or BOM cost
Key features
Best-in-class RDS(on) in SMD packages
Optimized for conduction performance, reaching the lowest RDS(on) values
High pulse current capability
Improved thermal resistance
600 V CoolMOS™ S7 SJ MOSFETs
The best price/performance SJ MOSFET for low frequency switching applications
The 600 V CoolMOS™ S7 superjunction MOSFET
is the perfect fit for applications where MOSFETs
are switched at low frequency, such as active
bridge rectification, inverter stages, in-rush
relays, PLCs, power solid state relay and solid
state circuit breakers. The new MOSFET design,
not being focused on switching losses, allows
the CoolMOS™ S7 to oer cost-optimized,
distinctively low on-resistance (RDS(on)) values,
ideally suited for applications looking to
minimize conduction losses at the best price.
The CoolMOS™ S7 leads the way for power density,
uniquely fitting a 22 mΩ RDS(on) chip into an innovative
small TO-Leadless (TOLL) SMD package.
Use cases
Typically, CoolMOS™ S7 is used in active rectification bridges, where diodes are replaced or paralleled with MOSFETs,
obtaining an increase in eiciency without the need for extensive system redesign. In this application, the TO-leadless
(TOLL) package in low RDS(on) allows the most eicient and compact modular design based on daughter cards.
The CoolMOS™ S7 delivers also tremendous value to solid state relay (SSR) and solid state circuit breaker (SSCB)
designs, by bringing the superjunction MOSFET advantages to a system level cost comparable to silicon alternatives.
In addition, any socket or topology switching at low frequency can greatly benefits from the leading low RDS(on) x price.
Eiciency in 2400 W PFC at Vin = 230 VAC
Dierence between using or not using the
active bridge rectification
CoolMOS™ S7 brings more eiciency to power
supplies when used in an active rectification bridge.
CoolMOS™ S7 is the perfect complement for CoolSiC™ MOSFETs
and CoolGaN™ e-mode HEMTs in totem pole PFC topologies.
3 kW GaN based totem pole PFC eiciency calculation
with and without synchronous rectification when
Vin = 230 VAC, Vout = 400 V, fsw = 65 kHz
0 20 100 250
i.e. Brigde rectification in SMPS
Low frequency PFC for white goods
CoolMOS™ S7
CoolMOS™ P7, C7, G7, CFD7
i.e. Boost MOSFET in PFC
Switching frequency [kHz]
RDS(on) x price
i.e. Higher density designs
99.0
98.5
98.0
97.5
97.0 10 20 30 40 50 60 70 80 90 100
Load [%]
Eiciency [%]
No synchronous rectification22 mΩ 40 mΩ
+0.5%
99.0
98.5
98.0
99.3
10 20 30 40 50 60 70 80 90 100
Load [%]
Eiciency [%]
no sync rect
with sync rect
+0.3%
35 mΩ GaN based half-bridge totem pole PFC
35 mΩ GaN based half-bridge totem pole PFC with 22 mΩ CoolMOS™ S7 in synchronous rectificatio
n
35 mΩ GaN based half-bridge totem pole PFC with 40 mΩ CoolMOS™ S7 in synchronous rectification
600 V CoolMOS™ S7
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
132
For more details on the product,
click on the part number.
600 V CoolMOS™ CFD7 SJ MOSFETs
Infineon's solution for resonant switching high power applications
The 600 V CoolMOS™ CFD7 is one of Infineon’s latest high voltage superjunction MOSFET series with an integrated fast
body diode. It is the ideal choice for resonant topologies, such as LLC and ZVS PSFB, and targets the high SMPS market.
As a result of significantly reduced gate charge (QG), improved turn-o behavior, a reverse recovery charge (Qrr) of up
to 69 percent lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market, it
combines the highest eiciency and best-in-class reliability in so switching applications, without sacrificing the easy
implementation in the design-in process.
In addition, the 600 V CoolMOS™ CFD7 enables higher power density solutions by oering the best-in-class on-state
resistance (RDS(on)) package combinations in through-hole devices, as well as in surface mount devices. In ThinPAK
8x8
and TO-220 with CoolMOS™ CFD7, a RDS(on) of around 30 percent below the next best competitor oering can be
achieved.
All this together makes CoolMOS™ CFD7 the perfect fit for server and telecom applications, and it is also suitable for
EV-charging stations.
www.infineon.com/cfd7
1200
1000
800
600
400
200
0
Comp. C Comp. A Comp. D
Q
rr
[nC]
Comp. B
-69 %
-32 %
CFD2 CFD7
World‘s best Q
rr
got even better!
Q
rr
comparison of 170 mΩ CFD vs. 190 mΩ range competition*
*Comparison based on datasheet values
Δ Eiciency [%]
Load current [A]
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
0 10 20 30 40
IPW60R070CFD7 IPW65R080CFD Competitor A
Competitor B Competitor C Competitor D
Eiciency comparison of CFD7 vs. CFD2 and c
ompetition in 2 kW ZVS
Δ 1.45% Δ 0.17%
Features and benefits
Key benefits
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest eiciency with outstanding ease of use/performance trade-o
Enabling increased power density solutions
Key features
Ultrafast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest figure of merit (RDS(on) x QG x Eoss)
Best-in-class RDS(on)/package combinations
600 V CoolMOS™ CFD7 SJ MOSFETs
133
For more details on the product,
click on the part number.
CoolMOS™ CE SJ MOSFETs
High voltage superjunction MOSFETs for consumer applications
Infineon‘s CoolMOS™ CE is a product family that addresses consumer and lighting applications. It oers benefits in
eiciency and thermal behavior versus standard MOSFETs and is optimized for ease of use and cost-competitiveness,
while delivering the right fit performance and excellent Infineon quality.
CoolMOS™ CE customer benefits
Product portfolio We oer a broad portfolio covering five voltage classes in both through-hole and SMD packages
Quality Our field failure rates are as low as 0.1 DPM
Design-in support We have a large field application engineering team to provide professional and flexible support for your design
www.infineon.com/ce
Application example: 10 W and 15 W smartphone charger
10 W charger
IPS65R1K5CE
100
90
80
70
60
50
40
30
20
10
0
Temperature [°C]
CoolMOS™ CE meets typical MOSFET
case temperature requirements in charger applications
19°C 13°C 14°C 7°C
15 W charger
IPS65R1K0CE
High line Low line
CoolMOS™ CE case temperature:
The maximum MOSFET case temperature is required to
be below 90°C. CoolMOS™ CE meets this requirement and
oers enough margin required for design-in flexibility.
10 W charger
IPS65R1K5CE
100
95
90
85
80
75
70
65
60
55
50
Average eiciency [%]
CoolMOS™ CE meets the standard
eiciency requirements in charger application
4.5% 4.5% 14% 7%
15 W charger
IPS65R1K0CE
High line Low line
CoolMOS™ CE eiciency performance:
CoolMOS™ CE meets the 80 percent standard eiciency
requirement and oers enough margin required for
design-in flexibility.
The performance of CoolMOS™ CE
in the 10 W and 15 W design
demonstrates that the series meets
common EMI requirements for
charger applications and thus, is also
oering design-in flexibility.
40
30
20
10
0
-10
30M 50 60 80 100M
Frequency [Hz]
10 W design: IPS65R1K5CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
15 W design: IPS65R1K0CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
Level [dBµV/m]
Level [dBµV/m]
200 300 400 500 800 1G
40
30
20
10
0
-10
Frequency [Hz]
30M 50 60 80 100M 200 300 400 500 800
1G
EN 55022 B RE 10 m OP EN 55022 B RE 10 m OP
Horizontal direction Vertical direction Horizontal direction Vertical direction
Charger
CoolMOS™ CE SJ MOSFETs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
134
For more details on the product,
click on the part number.
CoolMOS™ SJ MOSFET high power package innovations
Space-saving and high performance packages
TO-247 4-pin with asymmetric leads
The TO-247 4-pin package with asymmetric leads is an optimized version of the standard
TO-247 4-pin and enables highest eiciency and controllability in the high power SMPS
market. The fourth pin acts as a Kelvin source. The main current of the switch is placed
outside of the gate loop and the feedback is eliminated. This leads to less switching losses,
especially at high currents. Secondly, the EMI will be reduced due to cleaner waveforms.
In addition, the asymmetric leads further improve the ease of use in the design-in process.
Compared to the standard TO-247 4-pin the distance between the critical pins has been
increased to enable simplified wave soldering and reduced board yield loss.
Top-side cooled Double DPAK (DDPAK)
This is the first top-side cooled surface mount device (SMD) package
addressing high power SMPS applications such as PC power, solar, server and telecom.
SMD-based SMPS designs support fast switching and help to reduce the parasitic induc-
tance associated with long leaded packages such as the common TO-220 package. In
today’s SMD-based designs, the output power is restricted by the thermal limit of the PCB
material because the heat must be dissipated through the board. Thanks to the top-side
cooling concept of DDPAK, the thermal decoupling of board and semiconductor is pos-
sible, enabling higher power density or improved system lifetime.
TO-263-7 (D2PAK-7-pin)
The TO-263-7-pin package is an SMD package addressing automotive-specific requirements
including high eiciency and controllability. The Kelvin source pin leads to reduced
switching losses. Furthermore the new 7-pin design increases the creepage distance at
the PCB and therefore helps to improve the manufacturability.
ThinPAK 8x8
With very small footprint of only 64 mm² (vs. 150 mm² for the D²PAK) and a very low profile
with only 1 mm height (vs. 4.4 mm for the D²PAK) the ThinPAK 8x8 leadless SMD package
for high voltage MOSFETs is a first choice to decrease system size in power-density driven de-
signs. Low parasitic inductance and a separate 4-pin Kelvin source connection oer best ef-
ficiency and ease of use. The package is RoHS compliant with halogen-free mold compound.
TO-Leadless
Combined with the latest CoolMOS™ C7 Gold (G7) technology, the TO-Leadless (TOLL)
package is Infineon’s flagship SMD package for high power/high current SMD solutions.
Compared to D
2
PAK 7-pin, TO-Leadless shows a 30 percent reduction in footprint, yet of-
fers improved thermal performance. This and the 50 percent height reduction result in a
significant advantage whenever highest power density is demanded. Equipped with 4-pin
Kelvin source connection and low parasitic inductances the package oers best eiciency
and ease of use. The package is MSL1 compliant and reflow solderable.
For highest eiciency and controllability
in high power SMPS markets
Enabling significant space savings
Optimized for high power
applications
www.infineon.com/coolmos-latest-packages
Innovative top-side cooled SMD solu-
tion for high power applications
An SMD package for high eiciency
and controllability in automotive
applications
CoolMOS™ high power packages
135
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CoolMOS™ SJ MOSFET low power package innovations
Addressing today’s consumer needs
SOT-223
The SOT-223 package without middle pin is a cost-eective alternative to DPAK, ad-
dressing the need for cost reductions in price sensitive applications. It oers a smaller
footprint, while still being pin-to-pin compatible with DPAK, thus, allowing a drop-in
replacement for DPAK and second sourcing. Moreover, SOT-223 achieves comparable
thermal performance to DPAK and enables customers to achieve improved form fac-
tors or space savings in designs with low power dissipation.
ThinPAK 5x6
ThinPAK 5x6 reduces the PCB area by 52 percent and height by 54 percent when com-
pared to the DPAK package which is widely used in chargers and adapters. ThinPAK
5x6 is the right device to replace DPAK and meet the market demands of slimmer and
smaller designs. Also ThinPAK 5x6 enables a reduced charger and adapter case hot
spot temperature by increasing the space between the MOSFET and the charger and
adapter case.
TO-220 FullPAK Narrow Lead
Infineon’s TO-220 FullPAK Narrow Lead addresses customer needs with regards to
height reduction requirements in adapter and charger applications. By oering an
optimized stando width and height and improved creepage distance, the package
can be fully inserted into the PCB without any production concerns and, therefore, is
especially suitable for slim and
semi-slim adapter solutions.
TO-220 FullPAK Wide Creepage
This package solution has an increased creepage distance between the pins to 4.25 mm
compared to 2.54 mm of a TO-220 FullPAK package. It targets open frame power sup-
plies such asTV setsandPC power,where dust can enter the case through air vents.
Dust particles can reduce the eective creepage between pins over time, which may
lead to high voltage arcing. The package meets the requirements of open frame power
supplies without any additional measures. Thus, it reduces system cost by oering an
alternative to frequently used approaches to increase creepage distance.
Cost-eective drop-in
replacement for DPAK
Solution for slim and small
adapters and chargers
Solution for height reduction
in adapters and chargers
Improved creepage distance for
open frame power supplies
www.infineon.com/coolmos-latest-packages
CoolMOS™ low power packages
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
136
For more details on the product,
click on the part number.
CoolMOS™ SJ MOSFETs for automotive
600 V CoolMOS™ CPA, 650 V CoolMOS™ CFDA, 800 V CoolMOS™ C3A and new
650 V CoolMOS™ CFD7A – on the fast lane in automotive applications
Highest system performance in a size and weight constrained environment, outstanding and proven product quality
and reliability, as well as 100 percent reliable delivery are the needs of our automotive customers. With the high voltage
automotive MOSFET series 600 V CoolMOS™ CPA and 650 V CoolMOS™ CFDA, 800 V CoolMOS™ C3A and the new 650 V
CoolMOS™ CFD7A, Infineon is perfectly prepared to take the challenges in the strongly growing automotive market.
CoolMOS™ SJ MOSFET automotive – benchmark in quality and reliability
Focus on top-notch quality and reliability without any compromise – that is the principle Infineon applies during
development and qualification of all CoolMOS™ superjunction technologies. For our automotive grade derivatives, the great
quality levels of the industrial base technologies are further boosted by special screening measures in front- and back-end,
as well as by extended qualification procedures. The Infineon robustness validation approach with extended stress-test
procedures, doubling the real application requirements, is one of our key measures to ensure a quality level well beyond the
formal requirements of the AEC Q101 standard. Aside from extended stress times on standard qualification tests, it comprises
test procedures, specially developed by Infineon to ensure highest quality of e.g., the power metallization of our devices.
Usage of robust package technologies, 100 percent gate oxide screening, and top-notch production monitoring, including
yield screening measures, part average testing (PAT), statistical bin alarm (SBA), and pattern recognition procedures,
complete our package to guarantee highest automotive quality. This holistic approach results in an unrivalled quality
position of our 600 V CoolMOS™ CPA and 650 V CoolMOS™ CFDA, 800 V CoolMOS™ C3A and the new 650 V CoolMOS™ CFD7A.
AEC Q101
Robustness validation – example for thermal cycling test
1.000 cycles
1.270 cycles
+254%
2.540 cycles
Customer mission
profile
Infineon automotive
robustness valida
tion
www.infineon.com/cfda
www.infineon.com/coolmos-automotive
Product series Key features Applications Quality
600 V CoolMOS™ CPA Best choice for demanding hard
switching applications
› Lowest RDS(on) per package
› Lowest gate charge value QG
› Hard switching topologies (with SiC diode)
› PFC boost stages in on-board charger
Quality level well beyond the formal
requirements of the AEC Q101 standard
through
› Special screening measures in front
end, back end
› Mission-profile based qualification
procedures
650 V CoolMOS™ CFDA
Easy implementation of layout and design
› Integrated fast body diode
› Limited voltage overshoot during hard commutation –
self-limiting dI/dt and dV/dt
› Low Qrr at repetitive commutation on body diode and
low Qoss
› Resonant switching topologies
› DC-DC stage of OBC
› LLC or full-bridge phase shi (ZVS) in DC-DC converter
› HID lamp
› Active DC link dis-charche
› Pre-charge
800 V CoolMOS™ C3A › Outstanding performance in terms of
eiciency, thermal behavior and ease-of-use
› High blocking voltage
› Auxiliary Supplies for low-power applications in Traction Inverters
› On-Board Charger
› HV-LV DC-DC converters
› DC-link pre-charge
› DC-Link active discharge
› Isolation Supervision
NEW 650 V CoolMOS™ CFD7A › Improved 650 V CoolMOS™ CFDA
› Higher application voltage possible (at the same proven
reliability level)
› New D2PAK 7-pin with increased creepage distance and
Kelvin source
› Considerable improvement in key parameters (higher
eiciency)
› Hard switching topologies (with SiC diode)
› PFC boost stages in on-board charger
› Resonant switching topologies
› DC-DC stage of OBC
› LLC or full-bridge phase shi (ZVS) in DC-DC converter
› HID lamp
› Active DC link discharge
› Pre-charge
CoolMOS™ automotive
137
For more details on the product,
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CoolMOS™ SJ MOSFET automotive – ready to support future application trends
Driven by the carbon dioxide (CO2) reduction initiatives, the market of plug-in hybrid PHEV and pure EV is strongly
growing. Higher ranges of the electric vehicles are realized by increasing the battery capacity and the energy eiciency
of the used electric components. The used battery voltage classes tend to become standardized at approximately
450 V with a trend towards the higher voltages, as this supports faster charging times and enables lighter cabling
within the vehicle. Discrete high voltage components are widely used for on board charger (OBC) and DC-DC converter
(LDC) applications, as price pressure increasingly displaces module-based solutions. The trend towards fast charging
impacts on the power range demanded from OBC topologies. Presently, as well as in the past, a vast majority of OBC
topologies have been found in the range up to 7.2 kW, whereas the future tends to stir the trend towards 11 kW or even
up to 22 kW. This development, paired with a demand for high eiciency and power density at low system cost, is a
strong driver for the usage of three-phase solutions.
While for the lower power OBC solutions classic PFC approaches are the well-established approaches in the market,
the Vienna rectifier is the optimal solution for the higher power levels. As a true three-phase topology, it delivers full
power if attached to a three-phase input but is flexible enough to run on a single-phase if required. The three-level
topology minimizes the filter eort compared to other solutions. By using the doubled frequency on the magnetic
components, it also helps to significantly reduce the size of the passives. As a three-level topology, the Vienna rectifier,
followed by two paralleled DC-DC stages, furthermore leads to a relaxed voltage stress level on the power MOSFETs.
This way, it enables to handle upcoming higher battery voltage levels. The RDS(on), required to yield a desired eiciency
level in a Vienna Rectifier, is a function of applied switching frequency and demanded power level. With our 600 V
CoolMOS™ CPA and 650 V CoolMOS™ CFDA portfolio, covering an RDS(on) range from 45 to 660 mΩ, we are well prepared
to support your next generation three-phase Vienna rectifier design. With CoolMOS™ you are ready to seize your share
in the emerging high-power onboard-charger markets.
www.infineon.com/coolmos-automotive
Classic PFC stage for OBC OBC Vienna rectifier for three-phase PFC in OBC
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
138
For more details on the product,
click on the part number.
900V CoolMOS™ C3 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-262
(I
2
PAK)
TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
120 IPW90R120C3
340 IPP90R340C3 IPI90R340C3 IPB90R340C3 IPA90R340C3 IPW90R340C3
500 IPI90R500C3 IPA90R500C3 IPW90R500C3
800 IPP90R800C3 IPA90R800C3
1000 IPP90R1K0C3 IPA90R1K0C3
1200 IPP90R1K2C3 IPI90R1K2C3 IPA90R1K2C3 IPD90R1K2C3
950V CoolMOS™ P7 ACTIVE & PREFERRED
Charger
RDS(on)
[mΩ]
TO-220 TO-220
FullPAK
SOT-223 TO-251
Long lead
TO-252
(DPAK)
TO-220
Wide creepage
ThinPAK 8x8 D
2
PAK
450 IPA95R450P7 IPU95R450P7 IPD95R450P7
750 IPA95R750P7 IPU95R750P7 IPD95R750P7
1200 IPA95R1K2P7 IPN95R1K2P7 IPU95R1K2P7 IPD95R1K2P7
2000 IPN95R2K0P7 IPU95R2K0P7 IPD95R2K0P7
3700 IPN95R3K7P7 IPU95R3K7P7
800 V CoolMOS™ P7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
narrow lead
280 IPP80R280P7 IPA80R280P7 IPW80R280P7 IPD80R280P7 IPAN80R280P7
360 IPP80R360P7 IPA80R360P7 IPW80R360P7 IPD80R360P7 IPAN80R360P7
450 IPP80R450P7 IPA80R450P7 IPD80R450P7 IPAN80R450P7
600 IPP80R600P7 IPA80R600P7 IPD80R600P7 IPU80R600P7 IPS80R600P7 IPN80R600P7
750 IPP80R750P7 IPA80R750P7 IPD80R750P7 IPU80R750P7 IPS80R750P7 IPN80R750P7
900 IPP80R900P7 IPA80R900P7 IPD80R900P7 IPU80R900P7 IPS80R900P7 IPN80R900P7
1200 IPP80R1K2P7 IPA80R1K2P7 IPD80R1K2P7 IPU80R1K2P7 IPS80R1K2P7 IPN80R1K2P7
1400 IPP80R1K4P7 IPA80R1K4P7 IPD80R1K4P7 IPU80R1K4P7 IPS80R1K4P7 IPN80R1K4P7
2000 IPD80R2K0P7 IPU80R2K0P7 IPS80R2K0P7 IPN80R2K0P7
2400 IPD80R2K4P7 IPU80R2K4P7 IPS80R2K4P7 IPN80R2K4P7
3300 IPD80R3K3P7 IPU80R3K3P7 IPN80R3K3P7
4500 IPD80R4K5P7 IPU80R4K5P7 IPN80R4K5P7
www.infineon.com/coolmos
www.infineon.com/c3
www.infineon.com/800v-p7
www.infineon.com/950v-p7
CoolMOS™ product portfolio
139
For more details on the product,
click on the part number.
www.infineon.com/coolmos
www.infineon.com/c3
www.infineon.com/ce
www.infineon.com/700v-p7
800V CoolMOS™ CE ACTIVE
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
310 IPA80R310CE
460 IPA80R460CE
650 IPA80R650CE
1000 IPA80R1K0CE IPD80R1K0CE IPU80R1K0CE
1400 IPA80R1K4CE IPD80R1K4CE
2800 IPD80R2K8CE
700 V CoolMOS™ P7 ACTIVE & PREFERRED
Charger
RDS(on)
[mΩ]
TO-251
(IPAK Short Lead)
TO-220 FullPAK TO-252
(DPAK)
TO-220 FullPAK narrow
lead
TO-251
(IPAK Short Lead
w/ ISO Stando)
SOT-223
360 IPS70R360P7S IPA70R360P7S IPD70R360P7S IPAN70R360P7S IPSA70R360P7S IPN70R360P7S
450 IPA70R450P7S IPAN70R450P7S IPSA70R450P7S IPN70R450P7S
600 IPS70R600P7S IPA70R600P7S IPD70R600P7S IPAN70R600P7S IPSA70R600P7S IPN70R600P7S
750 IPA70R750P7S IPAN70R750P7S IPSA70R750P7S IPN70R750P7S
900 IPS70R900P7S IPA70R900P7S IPD70R900P7S IPAN70R900P7S IPSA70R900P7S IPN70R900P7S
1200 IPSA70R1K2P7S IPN70R1K2P7S
1400 IPS70R1K4P7S IPD70R1K4P7S IPSA70R1K4P7S IPN70R1K4P7S
2000 IPSA70R2K0P7S IPN70R2K0P7S
800V CoolMOS™ C3 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
85 SPW55N80C3
290 SPP17N80C3 SPB17N80C3 SPA17N80C3 SPW17N80C3
450 SPP11N80C3 SPA11N80C3 SPW11N80C3
650 SPP08N80C3 SPA08N80C3
900 SPP06N80C3 SPA06N80C3 SPD06N80C3
1300 SPP04N80C3 SPA04N80C3 SPD04N80C3
2700 SPA02N80C3 SPD02N80C3
700V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 FullPAK Wide
Creepage
TO-262
(I
2
PAK)
TO-251
(IPAK Short Lead with ISO
Stando)
TO-252
(DPAK)
TO-251
(IPAK Short Lead)
SOT-223
600 IPAW70R600CE IPSA70R600CE IPD70R600CE
950 IPAW70R950CE IPI70R950CE IPSA70R950CE IPD70R950CE IPS70R950CE
1000 IPN70R1K0CE
1400 IPSA70R1K4CE IPD70R1K4CE IPS70R1K4CE
1500 IPN70R1K5CE
2000 IPSA70R2K0CE IPD70R2K0CE IPS70R2K0CE
2100 IPN70R2K1CE
CoolMOS™ product portfolio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
140
For more details on the product,
click on the part number.
650V CoolMOS™ CFD2 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-262
(I
2
PAK)
TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
ThinPAK 8x8
41 IPW65R041CFD
80 IPW65R080CFD
110 IPP65R110CFD IPB65R110CFD IPA65R110CFD IPW65R110CFD
150 IPP65R150CFD IPB65R150CFD IPA65R150CFD IPW65R150CFD
165 IPL65R165CFD
190 IPP65R190CFD IPI65R190CFD IPB65R190CFD IPA65R190CFD IPW65R190CFD
210 IPL65R210CFD
310 IPP65R310CFD IPB65R310CFD IPA65R310CFD
340 IPL65R340CFD
420 IPP65R420CFD IPA65R420CFD IPW65R420CFD IPD65R420CFD
660 IPA65R660CFD IPD65R660CFD
950 IPD65R950CFD
1400 IPD65R1K4CFD
www.infineon.com/coolmos
www.infineon.com/g7
www.infineon.com/c7
www.infineon.com/cfd2
www.infineon.com/ce
650V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
400 IPA65R400CE IPD65R400CE IPS65R400CE
650 IPA65R650CE IPD65R650CE IPS65R650CE IPAN65R650CE
1000 IPA65R1K0CE IPD65R1K0CE IPS65R1K0CE
1500 IPA65R1K5CE IPD65R1K5CE IPN65R1K5CE
650V CoolMOS™ C7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 8x8
19 IPW65R019C7 IPZ65R019C7
45 IPP65R045C7 IPB65R045C7 IPA65R045C7 IPW65R045C7 IPZ65R045C7
65 IPP65R065C7 IPB65R065C7 IPA65R065C7 IPW65R065C7 IPZ65R065C7
70 IPL65R070C7
95 IPP65R095C7 IPB65R095C7 IPA65R095C7 IPW65R095C7 IPZ65R095C7
99 IPL65R099C7
125 IPP65R125C7 IPB65R125C7 IPA65R125C7 IPW65R125C7
130 IPL65R130C7
190 IPP65R190C7 IPB65R190C7 IPA65R190C7 IPW65R190C7 IPD65R190C7
195 IPL65R195C7
225 IPP65R225C7 IPB65R225C7 IPA65R225C7 IPD65R225C7
230 IPL65R230C7
650 V CoolMOS™ C7 Gold (G-series) ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO -220 TO-Leadless
(TOLL)
TO-263
(D
2
PAK)
TO-220
FullPAK
TO-247 TO -252
(DPAK)
33 IPT65R033G7
105 IPT65R105G7
195 IPT65R195G7
CoolMOS™ product portfolio
141
For more details on the product,
click on the part number.
www.infineon.com/coolmos www.infineon.com/600v-p7
www.infineon.com/600v-PFD7
www.infineon.com/CFD7
600 V CoolMOS™ P7 ACTIVE & PREFERRED
Standard grade
Charger
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-220 FullPAK
Narrow lead
TO-247 4-pin TO-252
(DPAK)
TO-220 FullPAK
Wide Creepage
ThinPAK 8x8 SOT-223
180 IPA60R180P7S IPAN60R180P7S IPD60R180P7S IPAW60R180P7S
280 IPA60R280P7S IPAN60R280P7S IPD60R280P7S IPAW60R280P7S
360 IPA60R360P7S IPAN60R360P7S IPD60R360P7S IPAW60R360P7S IPN60R360P7S
600 IPA60R600P7S IPAN60R600P7S IPD60R600P7S IPAW60R600P7S IPN60R600P7S
*Coming soon
600 V CoolMOS™ P7 ACTIVE & PREFERRED
Industrial grade
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-247 TO-247 4-pin
asymmetric leads
TO-252
(DPAK)
TO-220 FullPAK
Wide Creepage
ThinPAK 8x8 D
2
PAK
24 IPW60R024P7 IPZA60R024P7
37 IPW60R037P7 IPZA60R037P7
45 IPW60R045P7 IPZA60R045P7 IPB60R045P7
60 IPP60R060P7 IPA60R060P7 IPW60R060P7 IPZA60R060P7 IPB60R060P7
65 IPL60R065P7
80 IPP60R080P7 IPA60R080P7 IPW60R080P7 IPZA60R080P7 IPL60R085P7 IPB60R080P7
99 IPP60R099P7 IPA60R099P7 IPW60R099P7 IPZA60R099P7 IPB60R099P7
105 IPL60R105P7
120 IPP60R120P7 IPA60R120P7 IPW60R120P7 IPZA60R120P7 IPB60R120P7
125 IPL60R125P7
160 IPP60R160P7 IPA60R160P7
180 IPP60R180P7 IPA60R180P7 IPW60R180P7 IPZA60R180P7 IPD60R180P7 IPB60R180P7
185 IPL60R185P7
280 IPP60R280P7 IPA60R280P7 IPD60R280P7 IPB60R280P7
285 IPL60R285P7
360 IPP60R360P7 IPA60R360P7 IPD60R360P7 IPB60R360P7
365 IPL60R365P7
600 IPP60R600P7 IPA60R600P7 IPD60R600P7
Charger
600 V CoolMOS™ PFD7 ACTIVE & PREFERRED
Charger
RDS(on)
[mΩ]
TO-220
FullPAK Narrow Leads
TO-251
(IPAK Short Lead)
TO-252
(DPAK)
SOT-223 ThinPAK 5x6
125 IPAN60R125PFD7S
210 IPAN60R210PFD7S IPS60R210PFD7S IPD60R210PFD7S
280 IPAN60R280PFD7S IPS60R280PFD7S IPD60R280PFD7S
360 IPAN60R360PFD7S IPS60R360PFD7S IPD60R360PFD7S IPN60R360PFD7S IPLK60R360PFD7 *
600 IPS60R600PFD7S IPD60R600PFD7S IPN60R600PFD7S IPLK60R600PFD7 *
1000 IPS60R1K0PFD7S IPD60R1K0PFD7S IPN60R1K0PFD7S IPLK60R1K0PFD7 *
1500 IPD60R1K5PFD7S IPN60R1K5PFD7S IPLK60R1K5PFD7 *
2000 IPD60R2K0PFD7S IPN60R2K0PFD7S
600 V CoolMOS™ CFD7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
ThinPAK 8x8 DDPAK
TO-Leadless
(TOLL)
18
IPW60R018CFD7
24
IPW60R024CFD7
31/35
IPW60R031CFD7 IPT60R035CFD7 *
40/45
IPB60R040CFD7 IPW60R040CFD7
IPDD60R045CFD7 *
IPT60R045CFD7 *
55
IPB60R055CFD7 IPW60R055CFD7
IPDD60R055CFD7 *
IPT60R055CFD7 *
60
IPL60R060CFD7
70
IPP60R070CFD7 IPB60R070CFD7 IPW60R070CFD7
75
IPL60R075CFD7
IPDD60R075CFD7 *
IPT60R075CFD7 *
90/95
IPP60R090CFD7 IPB60R090CFD7 IPW60R090CFD7 IPL60R095CFD7
IPDD60R090CFD7 *
IPT60R090CFD7 *
105/115
IPP60R105CFD7 IPB60R105CFD7 IPW60R105CFD7 IPL60R115CFD7
IPDD60R105CFD7 *
IPT60R105CFD7 *
125/140
IPP60R125CFD7 IPB60R125CFD7 IPA60R125CFD7 IPW60R125CFD7 IPL60R140CFD7
IPDD60R125CFD7 *
IPT60R125CFD7 *
145/160
IPP60R145CFD7 IPB60R145CFD7 IPA60R145CFD7 IPW60R145CFD7 IPD60R145CFD7 IPL60R160CFD7
IPDD60R145CFD7 *
IPT60R145CFD7 *
170
IPP60R170CFD7 IPB60R170CFD7 IPA60R170CFD7 IPW60R170CFD7 IPD60R170CFD7
IPDD60R170CFD7 *
185
IPL60R185CFD7
210/225
IPP60R210CFD7 IPB60R210CFD7 IPA60R210CFD7 IPD60R210CFD7 IPL60R225CFD7
280
IPP60R280CFD7 IPB60R280CFD7 IPA60R280CFD7 IPD60R280CFD7
360
IPP60R360CFD7 * IPB60R360CFD7 IPA60R360CFD7 IPD60R360CFD7
CoolMOS™ product portfolio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
142
For more details on the product,
click on the part number.
600V CoolMOS™ P6 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 5x6 ThinPAK 8x8
41 IPW60R041P6
70 IPW60R070P6 IPZ60R070P6
99 IPP60R099P6 IPA60R099P6 IPW60R099P6 IPZ60R099P6
125 IPP60R125P6 IPA60R125P6 IPW60R125P6
160 IPP60R160P6 IPA60R160P6 IPW60R160P6
180 IPL60R180P6
190 IPP60R190P6 IPA60R190P6 IPW60R190P6
210 IPL60R210P6
230 IPA60R230P6
255
280 IPP60R280P6 IPA60R280P6 IPW60R280P6
330/360 IPL60R360P6S
380 IPA60R380P6 IPD60R380P6
600 IPA60R600P6 IPD60R600P6
650 IPL60R650P6S
www.infineon.com/coolmos
www.infineon.com/c7
www.infineon.com/p6
www.infineon.com/g7 www.infineon.com/s7
600V CoolMOS™ C7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 8x8
17 IPW60R017C7 IPZ60R017C7
40 IPP60R040C7 IPB60R040C7 IPW60R040C7 IPZ60R040C7
60 IPP60R060C7 IPB60R060C7 IPA60R060C7 IPW60R060C7 IPZ60R060C7
65 IPL60R065C7
99 IPP60R099C7 IPB60R099C7 IPA60R099C7 IPW60R099C7 IPZ60R099C7
104 IPL60R104C7
120 IPP60R120C7 IPB60R120C7 IPA60R120C7 IPW60R120C7
125 IPL60R125C7
180 IPP60R180C7 IPB60R180C7 IPA60R180C7 IPW60R180C7 IPD60R180C7
185 IPL60R185C7
600 V CoolMOS™ C7 Gold (G-series) ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO -220 TO-Leadless
(TOLL)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(Double DPAK)
ThinPAK 8x8
28 IPT60R028G7
50 IPT60R050G7 IPDD60R050G7
80 IPT60R080G7 IPDD60R080G7
102 IPT60R102G7 IPDD60R102G7
125 IPT60R125G7 IPDD60R125G7
150 IPT60R150G7 IPDD60R150G7
190 IPDD60R190G7
600 V CoolMOS™ S7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO -220 QDPAK
TO-Leadless
(TOLL)
10 IPDQ60R010S7 *
22 IPP60R022S7 IPT60R022S7
40 IPT60R040S7
65 IPT60R065S7
* Coming soon
CoolMOS™ product portfolio
143
For more details on the product,
click on the part number.
600V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 FullPAK TO-220 FullPAK
Wide Creepage
TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
190 IPAW60R190CE
280 IPAW60R280CE
380 IPAW60R380CE
400 IPA60R400CE IPD60R400CE IPS60R400CE
460 IPA60R460CE IPD60R460CE IPS60R460CE
600 IPAW60R600CE
650 IPA60R650CE IPD60R650CE IPS60R650CE IPAN60R650CE
800 IPD60R800CE IPS60R800CE IPAN60R800CE
1000 IPA60R1K0CE IPD60R1K0CE IPU60R1K0CE IPS60R1K0CE IPN60R1K0CE
1500 IPA60R1K5CE IPD60R1K5CE IPU60R1K5CE IPS60R1K5CE IPN60R1K5CE
2100 IPD60R2K1CE IPU60R2K1CE IPS60R2K1CE IPN60R2K1CE
3400 IPD60R3K4CE IPS60R3K4CE IPN60R3K4CE
500V CoolMOS™ CE ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
190 IPP50R190CE IPA50R190CE
280 IPP50R280CE IPA50R280CE IPD50R280CE
380 IPP50R380CE IPA50R380CE IPD50R380CE
500 IPA50R500CE IPD50R500CE IPAN50R500CE
650 IPD50R650CE IPN50R650CE
800 IPA50R800CE IPD50R800CE IPN50R800CE
950 IPA50R950CE IPD50R950CE IPN50R950CE
1400 IPD50R1K4CE IPN50R1K4CE
2000 IPD50R2K0CE IPN50R2K0CE
3000 IPD50R3K0CE IPN50R3K0CE
www.infineon.com/coolmos
www.infineon.com/ce www.infineon.com/500v-ce
CoolMOS™ product portfolio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
144
For more details on the product,
click on the part number.
www.infineon.com/coolmos
www.infineon.com/coolmos-automotive
CoolMOS™ SJ MOSFET automotive
600V CoolMOS™ CPA ACTIVE & PREFERRED
Product type RDS(on) @ TJ = 25°C
VGS = 10V
[mΩ]
ID,max. @ TJ = 25°C
[A]
ID_puls,max.
[A]
VGS(th),min.-max.
[V]
QG,typ.
[nC]
RthJC,max.
[K/W]
Package
IPB60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-263
IPB60R199CPA 199 16 51 2.5 … 3.5 32 0.9 TO-263
IPB60R299CPA 299 11 34 2.5 … 3.5 22 1.3 TO-263
IPP60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-220
IPW60R045CPA 45 60 230 2.5 … 3.5 150 0.29 TO-247
IPW60R075CPA 75 39 130 2.5 … 3.5 87 0.4 TO-247
IPW60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-247
IPI60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-262
800V CoolMOS™ C3A ACTIVE & PREFERRED
Product type RDS(on) @ TJ = 25°C
VGS = 10V
[mΩ]
ID,max. @ TJ = 25°C
[A]
ID_puls,max.
[A]
VGS(th),min.-max.
[V]
QG,typ.
[nC]
RthJC,max.
[K/W]
Package
IPD80R2K7C3A 2700 2 6 2.1 … 3.9 12 3 TO-252
IPB80R290C3A 290 17 51 2.1 … 3.9 91 0.55 TO-263
IPW80R290C3A 290 17 51 2.1 … 3.9 91 0.55 TO-247
650V CoolMOS™ CFDA ACTIVE & PREFERRED
Product type RDS(on) @ TJ = 25°C
VGS = 10V
[mΩ]
ID,max. @ TJ = 25°C
[A]
ID_puls,max.
[A]
VGS(th),min.-max.
[V]
QG,typ.
[nC]
RthJC,max.
[K/W]
Package
IPD65R420CFDA 420 8.7 27 3.5...4.5 32 1.5 TO-252
IPD65R660CFDA 660 6 17 3.5...4.5 20 2 TO-252
IPB65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-263
IPB65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-263
IPB65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-263
IPB65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-263
IPB65R660CFDA 660 6 17 3.5...4.5 20 2 TO-263
IPP65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-220
IPP65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-220
IPP65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-220
IPP65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-220
IPW65R048CFDA 48 63.3 228 3.5...4.5 27 0.25 TO-247
IPW65R080CFDA 80 43.3 127 3.5...4.5 16 0.32 TO-247
IPW65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-247
IPW65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-247
IPW65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-247
CoolMOS™ product portfolio
145
For more details on the product,
click on the part number.
650V CoolMOS™ CFD7A ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-263
D²PAK
TO-263-7
D²PAK 7 pin
TO-220 TO-247
230 IPB65R230CFD7A * IPBE65R230CFD7A *
115 IPB65R115CFD7A * * IPBE65R115CFD7A * * IPP65R0115CFD7A * IPW65R115CFD7A *
99 IPB65R099CFD7A * IPBE65R099CFD7A * IPP65R099CFD7A * IPW65R099CFD7A *
75 IPBE65R075CFD7A * IPW65R075CFD7A *
50 IPB65R050CFD7A * IPBE65R050CFD7A * IPP65R050CFD7A * IPW65R050CFD7A *
35 IPW65R035CFD7A *
22 IPW65R022CFD7A *
* ES available, SOP second half 2020
* * Coming soon
CoolMOS™ product portfolio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
146
For more details on the product,
click on the part number.
www.infineon.com/coolmos-latest-packages
CoolMOS™ SJ MOSFETs – packages
TO-247
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
P7 24/37/45 60/80 99/120 180
C7 17/40 60 99/120 180
P6 41 70 99/125 160/190 280
CFD7
18/24/31/40/55
70 90/125/145 170
CPA 45 75 99
650
C7 19/45 65 95/125 190
CFD2 41 80 110 150/190 420
CFDA 48 80 110 150/190
CFD7A
22 */
35 *
/50 *
75 * 99 */115 *
800 P7 280 360
C3 85 290 450
900 C3 120 340 500
SOT-223
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 650/800 950/1400 2000/3000
600
P7 360 600
CE 1000/1500 2100/3400
PFD7 360 600 1000/1500 2000
650 CE 2000
700 P7 360 450/600 700
900/1200/1400
2000
CE
1000/1500/2100
800 P7 650/750
900/1200/1400
2000/2400/
3300/4500
950 P7 1200 2000/3700
TO-247 4-pin
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 C7 17/40 60 99
P6 70 99
650 C7 19/45 65 95
TO-247 4-pin asymmetric leads
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 P7 24/37/45 60/80 99/120 180
IPAK
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 CE 1000/1500 2100
800
P7 600 750
900/1200/1400
2000/2400
3300/4500
CE 1000
950 P7 450 750 1200 2000/3700
ACTIVE & PREFERRED
CoolMOS™ product portfolio
* ES available, SOP second half 2020
147
For more details on the product,
click on the part number.
IPAK Short Lead
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 CE 400 460 650/800 1000/1500 2100/3400
PFD7 210/280 360 600 1000
650 CE 400 650 1000
700 P7 360/600 900/1400
CE 950/1400 2000
800 P7 600 750
900/1200/1400
2000/2400
IPAK Short Lead with ISO Stando
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
700 P7 360 450/600 750
900/1200/1400
2000
CE 600 950/1400 2000
DPAK
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 280 380 500 650/800 950/1400 2000/3000
600
P7 180 280 360 600
C7 180
CE 400 460 650/800 1000/1500 2100/3400
P6 380 600
CFD7 170 280 360 *
PFD7 210/280 360 600 1000/1500 2000
650
C7 190 225
CE 400 650 1000/1500
CFD2 420 660 950/1400
CFDA 420 660
700 P7 360 600 900/1400
CE 600 950/1400 2000
800
P7 280 360 450/600 750
900/1200/1400
2000/2400
3300/4500
C3 900/1300 2700
CE 1000/1400 2800
900 C3 1200
950 P7 450 750 1200 2000
IPAK
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 CPA 99
650 CFD2 199
700 CE 950
900 C3 340 500 1200
www.infineon.com/coolmos-latest-packages
*Coming soon
ACTIVE & PREFERRED
CoolMOS™ product portfolio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
148
For more details on the product,
click on the part number.
TO-220 FullPAK
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 190 280 380 500 800 950
600
P7 60/80 99/120 160/180 280 360 600
C7 60 99/120 180
CE 400 460 650 1000/1500
CFD7 125 170 280 360 *
P6 99/125 160/190 230/280 380 600
650
C7 45 65 95/125 190 225
CE 400 650 1000/1500
CFD2 110 150/190 310 420 660
700 P7 360 450/600 750 900
800
P7 280 360 450/600 750
900/1200/1400
C3 290 450 650 900/1300 2700
CE 310 460 650 1000/1400
900 C3 340 500 800 1000/1200
950 P7 450 750 1200
TO-220 FullPAK Narrow Lead
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 500
600
CE 650/800
P7 180 280 360 600
PFD7 125 210/280 360
650 CE 650
700 P7 360 450/600 750 900
800 P7 280 360 450
Double DPAK (DDPAK)
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 G7 50 80 102/125 150/190
QDPAK
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 S7 10 *
DPAK
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
C7 40 60 99/120 180
P7 45 60/80 99/120 180 280 360
CPA 99 199 299
CFD7 40
55 70 20/105
125/145 170 210
280 360
650
C7 45 65 95/125 190 225
CFD2 110 150/190 310
CFDA 110 150/190 310 660
CFD7A 50 * * 99 * */115 230 * *
800 C3 290
900 C3 340
DPAK 7-pin
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
650 CFD7A 50 * * 75 * * 99 * */115 230 * *
www.infineon.com/coolmos-latest-packages
ACTIVE & PREFERRED
*Coming soon
* * ES available, SOP second half 2020
CoolMOS™ product portfolio
149
For more details on the product,
click on the part number.
*Coming soon
* * ES available, SOP second half 2020
TO-Leadless
RDS(on) group [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 G7 28/50 80 102/125 150
S7 22/40 65
650 G7 33 105 195
TO-220
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 190 280 380
600
P7 60/80 99/120 160/180 280 360 600
C7 40 60 99/120 180
P6 99/125 160/190 280
CFD7 70 90/125 170 280 360
CPA 99
S7 22
650
C7 45 65 95/125 190 225
CFD2 110 150/190 310 420
CFDA 50 99/110/115 150/190 310 660
CFD7A 50 * * 99 * */115 * *
800 P7 280 360 450/600 750
900/1200/1400
C3 290 450 650 900/1300
900 C3 340 800 1000/1200
ThinPAK 8x8
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
P7 65/85 105/125 185 285 365
C7 65 104/125 185
CFD7 75 185 225
P6 180 210
650 C7 70 99/130 195 230
CFD2 165 210 340
ThinPAK 5x6
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 P6 360 650
PFD7 360 600 1000/1500
TO-220 FullPAK Wide Creepage
RDS(on) [m]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 P7 180 280 360 600
CE 190 280 380 600
700 CE 600 950
www.infineon.com/coolmos-latest-packages
ACTIVE & PREFERRED
CoolMOS™ product portfolio
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
150
For more details on the product,
click on the part number.
Power MOSFETs (from October 2015 onwards)
Power MOSFETs (until 2005)
Nomenclature
SPP20N60 C3
Company
S = Formerly Siemens
Device
P = Power MOSFET
Continuous drain current
(@ TC = 25°C) [A]
Package type
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
D
= TO-252 (DPAK)
I
= TO-262 (I2PAK)
N
= SOT-223
P
= TO-220
U
= TO-251 (IPAK)
W
= TO-247
Z
= TO-247 4-pin
Breakdown voltage
Divided by 10 (60x10 = 600 V)
Specifications
C3 = CoolMOSTM C3
S5 = CoolMOSTM S5
Technology
N = N-channel transistors
IPDD 80 R190 P7
Company
I = Infineon
Device
P = Power MOSFET
Breakdown voltage
Divided by 10 (80x10 = 800 V)
Package type (max. 2 digits)
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
C
= Bare die
D
= TO-252 (DPAK)
I
= TO-262 (I2PAK)
L
= ThinPAK 8x8
N
= SOT-223
P
= TO-220
S
= TO-251 (IPAK Short Lead)
U
= TO-251 (IPAK Long Lead)
W
= TO-247
Z
= TO-247 4-pin
T
= TO-Leadless
DD
= TO-252 (Double DPAK)
AW
= TO-220 (Wide Creepage)
AN
= TO-220 (Narrow Lead)
LS
= ThinPAK 5x6
LK
= ThinPAK 5x6 Kelvin source
DQ
= TO-252 (Quadruple DPAK)
SA
= TO-251 (IPAK Short Lead with ISO Stando)
ZA = TO-247 4-pin asymmetric
Series name (2-4 digits)
In this case CoolMOS™ P7
(max. digits e.g. CFD7)
Reliability grade
blank = Industrial
A = Automotive
S = Standard
R = RDS(on)
As a seperator between voltage und R
DS(on)
RDS(on) [mΩ]
Automotive MOSFETs
IPP60R099 CPA
Packa
ge type
B
= TO-263 (DPAK)
I
= TO-262 (IPAK)
D
= TO-252 (DPAK)
P
= TO-220
W
= TO-247
BE
= TO-263 (DPAK 7-pin)
Automotive
Series name
CoolMOS™ CP, CoolMOS™ CFD, CoolMOS™ C3, CoolMOS™ CFD7
Company
I
= Infineon
Device
P
= Power MOSFET
Breakdown voltage
Divided by 10 (60x10 = 600 V)
RDS(on) [m]
R = RDS(on)
CoolMOS™ nomenclature
151
For more details on the product,
click on the part number.
Further information, datasheets and documents
www.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages
www.infineon.com/coolmos-automotive
www.infineon.com/gan
Evaluationboards and simulation models
www.infineon.com/coolmos-boards
www.infineon.com/powermosfet-simulationmodels
Infineon support for high voltage MOSFETs
Useful links and helpful information
Simulation
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
152
For more details on the product,
click on the part number.
› CoolGaN™ e-mode HEMTs
› CoolGaN™ 400 V e-mode GaN HEMTs
› CoolGaN™ 600 V e-mode GaN HEMTs
› CoolGaN™ product portfolio
› Silicon carbide
› CoolSiC™ silicon carbide MOSFETs 650 V
› CoolSiC™ silicon carbide MOSFETs 1200 V
Wide bandgap semiconductors
› CoolSiC™ product portfolio
› CoolSiC™ Schottky diodes
› CoolSiC™ Schottky diodes 650 V
› CoolSiC™ Schottky diodes 1200 V
› SiC diodes product portfolio
› Silicon power diodes
153
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
154
For more details on the product,
click on the part number.
Wide bandgap semiconductors
Wide bandgap semiconductors
Gallium nitride (GaN) and silicon carbide (SiC)
The key to the next essential step towards an energy-eicient world is to use new materials, such as wide bandgap
semiconductors that allow for greater power eiciency, smaller size, lighter weight, lower overall cost – or all of these
together. Infineon, with its unique market position of being currently the only company oering silicon (Si),silicon
carbide (SiC)andgallium nitride (GaN)devices, is the customer’s first choice in all segments.
CoolGaN™ – ultimate eiciency and reliability
Compared to silicon (Si), the breakdown field of Infineon’s CoolGaN™ enhancement mode (e-mode) HEMTs is ten times
higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si and
the reverse recovery charge is almost zero which is key to high-frequency operations. GaN is the best-suited technology
in hard-switching as well as resonant topologies, and is enabling new approaches in current modulation. Infineon’s GaN
solution is based on the most robust and performing concept in the market – the enhancement-mode concept - oering
fast turn-on and turn-o speed. CoolGaN™ products focus on high performance and robustness, and add significant
value to a broad variety of systems across many applications such as server, telecom, hyperscale data centers, wireless
charging, adapter/charger, and audio. CoolGaN™ switches are easy to design-in with the matching GaN EiceDRIVER™
gate driver ICs from Infineon.
CoolSiC™ - revolution to rely on
Silicon carbide (SiC) has a wide bandgap of 3 electronvolts (eV) and a much higher thermal conductivity compared
to silicon. SiC-based MOSFETs are best-suited for high-breakdown, high-power applications that operate at higher
frequencies compared to traditional IGBTs. CoolSiC™ MOSFETs come along with a fast internal freewheeling diode, thus
making hard commutation without additional diode chips possible. Due to its unipolar character, the MOSFETs show very
low, temperature-independent switching and low conduction losses, especially under partial load conditions. Based on
proven, high-quality volume manufacturing, Infineon’s silicon carbide solutions combine revolutionary technology with
benchmark reliability – for our customers’ success today and tomorrow. The oering is completed by EiceDRIVER™
SiC MOSFET gate driver ICs based on Infineon’s successful coreless transformer technology.
www.infineon.com/wbg
155
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
156
For more details on the product,
click on the part number.
CoolGaN™
CoolGaN™ e-mode HEMTs
Tailor-made for the highest eiciency and power density in switch mode power supplies
In comparison to the next best silicon alternative, CoolGaN™ enables higher power density and the highest eiciency,
especially in the partial load range, through novel topologies such as the CCM totem-pole PFC stage. GaN e-mode HEMT
performance features a low reverse recovery charge and excellent dynamic performance in reverse conduction
compared to silicon FET solutions. This enables more eicient operation at established frequencies, and much higher
frequency operation which can improve power density by shrinking the size of passive components. CoolGaN™
enables doubled output power in a given energy storage slot size, freeing up space and realizing higher eiciency at
the same time.
Infineon’s CoolGaN™ comes with industry-leading reliability. During the quality management process, it is not only the
device which is thoroughly tested but also its behavior in the application environment. The performance of CoolGaN™
goes beyond other GaN products in the market.
Infineon leverages its unique portfolio of high- and low-voltage MOSFETs, driver ICs and digital controllers to
complement its CoolGaN™ product line, thus enabling full exploit for GaN benefits.
CoolGaN™ e-mode HEMTs overview
Features
› Low output charge and
gate charge
› No reverse recovery charge
Design benefits
› High power density, small and
light design
› High eiciency in resonant circuits
› New topologies and current
modulation
› Fast and (near-)lossless switching
Advantages
› Operational expenses (OPEX)
and capital expenditure (CAPEX)
reduction
› BOM and overall cost savings
CoolGaN™ 600 V e-mode HEMTs
1EDF5673K
CoolGaN™ 400 V e-mode HEMTs
1EDF5673F 1EDS5663H
CoolGaN™ e-mode HEMTs
Perfect fit for enhancement-mode GaN HEMTs
Single-channel functional and reinforced isolated gate-driver ICs for enhancement-mode GaN HEMTs
www.infineon.com/gan
The highest quality
The qualification of GaN switches requires a dedicated
approach, well above existing silicon standards
› Infineon qualifies GaN devices well beyond
industry standards
› Application profiles are an integral part of
the qualification process
› Failure models, based on accelerated test condi-
tions, ensure target lifetime and quality are met
› Infineon sets the next level of wide bandgap quality
Application
profile
Degradation
models
Qualification plan
Rel. investigation at
development phase
QRP – quality
requirement profile
Released
product
157
For more details on the product,
click on the part number.
CoolGaN™
CoolGaN™ 400 V and 600 V e-mode GaN HEMTs –
bringing GaN technology to the next level
Infineon’s CoolGaN™ 400 V and 600 V e-mode HEMTs enable more than 98 percent system eiciency and help
customers to make their end products smaller and lighter. Driving enhancement-mode devices requires some
additional features when choosing the correct gate driver IC, however, CoolGaN™ technology does not require
customized ICs. Infineon oers three new members of a single-channel galvanically isolated gate driver IC family.
The new components are a perfect fit for e-mode GaN HEMTs with non-isolated gate (diode input characteristic)
and low threshold voltage, such as CoolGaN™.
Complete support of all requirements specific to e-mode GaN HEMTs operation:
› Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Resistor programmable gate current for steady on-state (typically 10 mA)
› Programmable negative gate voltage to completely avoid spurious turn-on in half-bridges
Block diagram: high-eiciency GaN switched mode power supply (SMPS)
www.infineon.com/gan
CoolMOS™
CoolMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
AC
LINE
EMI
filter
EiceDRIVER™
2EDF7275
LLC
controller
Totem pole
Full-bridge PFC Resonant LLC Synchronous
rectifier
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
*GaN EiceDRIVER™ ICs are single-channel products
2 x EiceDRIVER™
2EDF7275
2 x
GaN EiceDRIVER™
1EDF5673* 4 x
GaN EiceDRIVER™
1EDS5663H*
PFC
controller
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
158
For more details on the product,
click on the part number.
CoolGaN™ 400 V
CoolGaN™ 400 V e-mode GaN HEMTs
Class D output stage oering the best audio experience
CoolGaN™ 400 V enables smoother switching and more linear class D output stage by oering low/linear Coss, zero
Qrr, and normally-o switch. Ideal class D audio amplifiers oer 0 percent distortion and 100 percent eiciency. What
impairs the linearity and power loss is highly dependent on switching characteristics of the switching device. Infineon’s
CoolGaN™ 400 V breaks through the technology barrier by introducing zero reverse recovery charge in the body diode
and very small, linear input and output capacitances.
In addition, the e-mode concept oers fast turn-on and turn-o speed. This feature also simplifies pairing CoolGaN™
with the IRS20957SPBF class D controller and therefore enables faster go-to-market.
CoolGaN™ for class D audio solutions
CoolGaN™ 400 V is tailored for premium HiFi home audio, professional, and aermarket car audio systems where end
users demand every detail of their high resolution soundtracks. These have been conventionally addressed by bulky
linear amplifiers or tube amplifiers. With CoolGaN™ 400 V as the class D output stage, audio designers will be able to
deliver the best audio experience to their prospective audio fans.
CoolGaN™ 400 V devices in DSO-20-87 and HSOF-8-3 (TOLL-leadless) package have been tested in class D audio
amplifier applications on 200 W + 200 W dual-channel system designs.
The CoolGaN™ 400 V devices benefit from the engineering expertise Infineon has made towards challenging
applications, such as telecom rectifiers and SMPS servers, where CoolGaN™ technology proved to be highly reliable.
It is the most robust and performing concept in the market. The CoolGaN™ 400 V portfolio is built around class D audio
requirements, with high-performing SMD packages to fully exploit the benefits of GaN technology.
Key features
› Ultralow and linear Coss 400 V power devices
› Zero Qrr
› E-mode transistor – normally-o switch
Key benefits
› Clean switching performance
› Narrow dead time for better THD
› Easy to use: compatible with the IRS20957SPBF class D
audio control IC
www.infineon.com/gan
159
For more details on the product,
click on the part number.
CoolGaN™ 600 V
www.infineon.com/gan
CoolGaN™ 600 V e-mode GaN HEMTs
The highest eiciency and power density with reduced system costs
The e-mode concept oers fast turn-on and turn-o speed, as well as a better path towards integration. CoolGaN™
600 V e-mode HEMTs enable simpler and more cost-eective half-bridge topologies. As e-mode based products reach
maturity, CoolGaN™ 600 V HEMTs are gaining growing prominence thanks to their potential. The CoolGaN™ 600 V series
is manufactured according to a specific, GaN-tailored qualification process which goes far beyond the standards for
silicon power devices. CoolGaN™ 600 V is designed for datacom and server SMPS, telecom rectifiers, as well as mobile
chargers and adapters, and can be used as a general switch in many other industrial and consumer applications. It
is the most rugged and reliable solution in the market. The CoolGaN™ portfolio is built around high performing SMD
packages to fully exploit the benefits of GaN.
CoolGaN™ for PFC
CoolGaN™ enables the adoption of simpler half-bridge topologies (including the elimination of the lossy input bridge
rectifier). The result is record eiciency (>99%) with a potential for BOM savings.
CoolGaN™ for resonant topologies
› In resonant applications, ten times lower Qoss and QG enables
high-frequency operations (>1 MHz) at the highest eiciency
levels
› Linear output capacitance leads to 8 to 10 times lower
dead time
› Devices can be easily paralleled
› Power density can be pushed even further by optimizing
the thermal performance
› CoolGaN™ enables to push the eiciency forward, thus
enabling high power density e.g., in low-power
chargers/adapters
Full-bridge totem pole Demonstration board
2.5 kW totem pole PFC board:
EVAL_2500W_PFC_GAN_A
250 500 750 1000 1250 1500 1750 2000 2250 2500
99.18 99.33 99.33 99.31 99.25 99.17 99.07 99.00
98.90
98.75
Eiciency versus load (fsw = 65 kHz)*
Output power [W]
Eiciency [%]
100
99
98
97
96
Flat eiciency
> 99 % over wide load range
Measured values
All available boards within +/- 0.1%
IGO60R070D1
* No external power supplies – everything included.
Vin = 230 VAC, Vout = 390 VDC, tambient = 25 °C
Q3
400 V
AC IN
Q4
L1
Q1
Q2
› 2 x 70 mΩ CoolGaN™ in DSO-20-85
› 2 x 33 mΩ CoolMOS™
Applications
› Telecom
› Server
› Datacom
› Adapter and charger
› Wireless charging
› SMPS
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
160
For more details on the product,
click on the part number.
CoolGaN™ portfolio
CoolGaN™ 400 V e-mode GaN HEMTs
Package DSO-20-87
Top-side cooling
HSOF-8-3
(TO-Leadless)
up to 500 W up to 200 W
70 mΩ IGOT40R070D1 * * IGT40R070D1 E8220
*Standard grade
* * Coming soon
GaN EiceDRIVER™ family product portfolio
Product Package Input to output isolation Propagation
delay accuracy
Typ. high level
(sourcing) out-
put resistance
Typ. low level
(sinking) output
resitance
SP number
Isolation class Rating Surge testing Certification
1EDF5673K LGA, 13-pin, 5x5
mm
functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 Ω 0.35 Ω SP002447622
1EDF5673F DSO, 16-pin,
150 mil
functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 Ω 0.35 Ω SP003194020
1EDS5663H DSO, 16-pin,
300 mil
reinforced VIOTM = 8 kVpk
VISO = 5.7 kVrms
VISOM > 10 kVpk VDE0884-10
UL1577
-6 ns/+7ns 0.85 Ω 0.35 Ω SP002753980
Infineon’s CoolGaN™ devices, driven by single-channel isolated gate driver ICs from the GaN EiceDRIVER™ family,
aim to unlock the full potential of GaN technology.
www.infineon.com/gan
www.infineon.com/gan-eicedriver
CoolGaN™ 600 V e-mode GaN HEMTs
DSO-20-85
Bottom-side cooling
DSO-20-87
Top-side cooling
HSOF-8-3
TO-Leadless
LSON-8-1
DFN 8x8
42 mΩ IGO60R042D1 * * IGOT60R042D1 * * IGT60R042D1 * *
70 mΩ IGO60R070D1 IGOT60R070D1 IGT60R070D1 IGLD60R070D1
190 mΩ IGT60R190D1S * IGLD60R190D1
IGT60R190D1 * *
Pmax
RDS(on) max.
RDS(on)
Package
161
For more details on the product,
click on the part number.
IGT60R070D 1
Packag
e type
LD
= DFN 8 x 8-LSON
T
= TOLL
O
= DSO20-BSC
OT
= DSO20-TSC
Generation
1 = 1st generation
Product type
D = Discrete
S = System
Company
I
= Infineon
Technology
G
= GaN
Voltage
Divided by 10 (60x10 = 600 V)
RDS(on) [mΩ]
R = RDS(on)
Reliability grade
blank = Industrial
A
= Automotive
S = Standard
CoolGaN™
www.infineon.com/gan
Nomenclature
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
162
For more details on the product,
click on the part number.
Silicon carbide
Revolution to rely on
Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which oers a number
of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si).
In particular, the much higher breakdown field strength and thermal conductivity of silicon carbide allow developing
devices which by far outperform the corresponding silicon-based ones, and enable eiciency levels unattainable
otherwise. Infineon’s portfolio of SiC devices covers 650 V to 1200 V Schottky diodes as well as the revolutionary
CoolSiC™ MOSFETs.
EiceDRIVER™ SiC MOSFET gate driver ICs are well-suited to drive SiC MOSFETs, especially Infineon’s ultra-fast switching
CoolSiC™ SiC MOSFETs. These gate drivers incorporate most important key features and parameters for SiC driving such
as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability,
active Miller clamp, DESAT protection, and extended CMTI capability.
www.infineon.com/coolsic-mosfet
www.infineon.com/SiCgd
163
For more details on the product,
click on the part number.
CoolSiC™ silicon carbide MOSFETs 650 V
Delivering reliable and cost eective top performance
Silicon carbide physical characteristics, from wide bandgap to electron mobility and thermal conductivity, provide the
basis to engineer high performance semiconductor technologies and products. The CoolSiC™ MOSFETs from Infineon
maximize the advantages of silicon carbide, oering a high performance product that also meets power electronics design
requirements, like reliability and ease of use. As per performance, the CoolSiC™ MOSFETs show low RDS(on) dependency
with temperature and low switching losses. The reliability is built on technological strengths and on flawless quality
processes. Some aspects of Infineon’s SiC technology, like a superior gate oxide reliability, excellent thermal behavior,
advanced avalanche ruggedness and short circuit capabilities contribute to the robustness of the device. Infineon’s
benchmark quality was further improved for silicon carbide, with an application-focused qualification scope exceeding
standards, complemented by SiC-specific screening measures. Additional unique features, like 0 V turn-o VGS, wide VGS
range, and the use of silicon MOSFET drivers and driving schemas make CoolSiC™ MOSFETs 650 V easy to integrate and
use.
CoolSiC™ MOSFETs can enable streamlined and cost-optimized system designs with less components, weight and
size, reaching high energy eiciency and power density. For instance, the CoolSiC™ MOSFETs boast a low level of Qrr,
roughly 80% less of the best CoolMOS™ reference in the market, the CoolMOS™ CFD7. This ensures the robustness of
the body diode, making the CoolSiC™ MOSFETs suitable for topologies with continuous hard commutation, like, the
high eiciency Totem Pole PFC, a topology that enables > 99% of eiciency.
High eiciency CoolSiC™ totem-pole PFC in server SMPS (switched mode power supply)
Leveraging SiC’s material properties
Performance
Static behavior
Dynamic behavior
Reliability
Quality
Ease of use
Robustness
Robustness for continuous hard commutation topologies
RDS(on)*Qrr [mΩ * µC]
RDS(on)*Qoss [mΩ * µC]
35
30
25
20
15
10
5
0
CoolMOS™ CFD7*
* Best CoolMOS™ SJ MOSFET reference in the market
CoolSiC™ 650 VCoolMOS™ CFD7* CoolSiC™ 650 V
35
30
25
20
15
10
5
0
CoolSiC™ / Silicon carbide devices
www.infineon.com/coolsic-mosfet
www.infineon.com/SiCgd
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
AC
LINE
EMI
filter
PFC
controller
EiceDRIVER™
2EDF9275F
EiceDRIVER™
2EDF7275F
2x EiceDRIVER™
2EDF7275
LLC
controller
2x EiceDRIVER™
2EDS9265H
Totem pole
Full-bridge PFC Resonant LLC Synchronous
rectifier
CoolSiC™ 650 V
CoolSiC™ 650 V
CoolSiC™ 650 V
CoolSiC™ 650 V
CoolSiC™ 650 V
CoolSiC™ 650 V
600 V CoolMOS™ S7
600 V CoolMOS™ S7
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
164
For more details on the product,
click on the part number.
www.infineon.com/coolsic-mosfet
www.infineon.com/SiCgd
CoolSiC™ silicon carbide MOSFETs 1200 V
Infineon’s CoolSiC™ technology enables radically new product designs
Silicon carbide (SiC) opens up new degrees of freedom for designers to harness unseen levels of eiciency and system
flexibility. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC MOSFET oers a series
of advantages. These include the low switching losses with 1200 V and 650 V switches, very low reverse recovery losses
of the internal commutation proof body diode, temperature-independent low switching losses, and threshold-free on-
state characteristics. Based on volume experience and compatibility know-how, Infineon introduces the revolutionary
SiC technology which enables radically new product designs with high performance and high reliability. CoolSiC™
MOSFET products are targeted for automotive, photovoltaic inverters, battery charging, EV charging, industrial drives,
UPS, SMPS, and energy storage.
TO-247 4-pin package contains an additional connection to the source (Kelvin connection) that is used as a reference
potential for the gate driving voltage, thereby eliminating the eect of voltage drops over the source inductance. The result is
even lower switching losses than for the TO-247 3-pin version, especially at higher currents and higher switching frequencies.
The gate-source pin of the TO-263 7-pin package, similar as of the TO-247 4-pin, eliminates the eect of voltage drops over
the source inductance, therefore further reduce the turn-on switching loss. TO-263 7-pin package minimizes the leakage
inductance between drain and source, reduce the risk of high turn-o voltage overshoot.
Features and benefits
Key benefits
Best-in-class system performance
Eiciency improvement and reduced cooling eort
Longer lifetime and higher reliability
Enables higher frequency operation, allowing the increase in power density
Reduction in system cost
Ease of use
Key features
Very low switching losses
Superior gate-oxide reliability
Threshold-free on-state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5 V
Fully controllable dV/dt
Commutation robust body diode, ready for synchronous rectification
USB, Serial
COM
Current sensing
Current sensing
Position sensing
Power management
AC/DC DC/DC
Gate driver
3-phase
inverter
XMC
microcontroller
Hall & GMR
sensors
M
Status
indication
Maintenance
interface
CoolSiC™ / Silicon carbide devices
165
For more details on the product,
click on the part number.
CoolSiC™ MOSFET nomenclature
Breakdown voltage
Divided by 10
120
= 1200 V
IMW120 RHM145
Company
I = Infineon
H = High gate voltage range
Device
M = MOSFET
Package Type
W = TO-247
Z = TO-247 4-pin
BG = D2PAK 7-pin
Series name
M1 = Generation 1
RDS(on) [mΩ]
R = RDS(on)
As a separator between
voltage und RDS(on)
www.infineon.com/coolsic-mosfet
www.infineon.com/SiCgd
CoolSiC™ MOSFET 1200 V ACTIVE & PREFERRED
TO-247 TO-247-4 D2PAK 7-pin Gate Driver for CoolSiC™
30 mΩ
IMW120R030M1H IMZ120R030M1H IMBG120R030M1H * 1EDC60H12AH
45 mΩ
IMW120R045M1 – lead product IMZ120R045M1– lead product IMBG120R045M1H * 1EDC20I12MH
60 mΩ
IMW120R060M1H IMZ120R060M1H IMBG120R060M1H * 1ED020I12-F2
90 mΩ
IMW120R090M1H IMZ120R090M1H IMBG120R090M1H * 2ED020I12-F2
140 mΩ
IMW120R140M1H IMZ120R140M1H IMBG120R140M1H * 1ED3124MU12H *
220 mΩ
IMW120R220M1H IMZ120R220M1H IMBG120R220M1H * 1ED3491MU12M *
350 mΩ
IMW120R350M1H IMZ120R350M1H IMBG120R350M1H * 1ED3890MU12M *
* Coming soon
RDS(on)
Package
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
166
For more details on the product,
click on the part number.
CoolSiC™ Schottky diodes
CoolSiC™ Schottky diodes
The dierences in material properties between silicon carbide and silicon limit the fabrication of practical silicon
unipolar diodes (Schottky diodes) to a range up to 100-150 V, with a relatively high on-state resistance and leakage
current. In SiC, Schottky diodes can reach a much higher breakdown voltage. Infineon is the world’s first SiC discrete
power supplier. Infineon oers products up to 1200 V in discrete packages and up to 1700 V in modules.
The long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance.
With over 10 years of pioneering experience in developing and manufacturing SiC diodes, Infineon’s latest CoolSiC™
Schottky diode generation 6 family sets benchmark in quality, eiciency and reliability.
Features
› No reverse
recovery charge
› Purely capacitive
switching
› High operating
temperature
(Tj, max 175°C)
Advantages
› Low turn-o losses
› Reduction of CoolMOS™
or IGBT turn-on loss
› Switching losses
independent
from load current,
switching
speed and temperature
Benefits
› System eiciency
improvement compared
to Si diodes
› Reduced cooling
requirements
› Enabling higher
frequency/increased
power density
› Higher system reliability
due to lower operating
temperature
› Reduced EMI
Applications
› Server
› Telecom
› Solar
› UPS
› EV charging
› Energy storage
› PC power
› Motor drives
› Lighting
› CAV
Reverse recovery charge of SiC Schottky diodes versus Si-pin diodes
The majority of carrier characteristics imply no reverse recovery charge
and the only contribution to the switching losses comes from the tiny
displacement charge of capacitive nature. In the same voltage range, silicon
devices have a bipolar component resulting in much higher switching
losses. The graph shows the comparison between various 600V devices.
Improved system eiciency (PFC in CCM mode operation, full load, low line)
The fast switching characteristics of the SiC diodes provide clear eiciency
improvements at system level. The performance gap between SiC and
high-end silicon devices increases with the operating frequency.
10
8
6
4
2
0
-2
-4
-6
-8
-10
0.07 0.1 0.13 0.16 0.19 0.22 0.25
T=125°C, VDC= 400 V, IF=6 A, di/dt=200 A/µs
SiC Schottky diode
Si-pin double diode (2*300 V)
Ultrafast Si-pin diod
e
I [A]
Time [µs]
95.0
94.5
94.0
93.5
93.0
92.5
92.0
91.5
91.0
60 120 180 240
Switchting frequency [kHz]
Eiciency [%]
Infineon SiC 6 A Comp. 1 6 A Comp. 2 6 A
www.infineon.com/sic
167
For more details on the product,
click on the part number.
CoolSiC™ Schottky diodes
CoolSiC™ Schottky diodes 650 V
CoolSiC™ Schottky diodes 650 V G6 and G5
The new CoolSiC™ Schottky diode 650 V G6 product family is built over the strong characteristics of the
previous generation G5, fully leveraging technology and process innovation to propose the best eiciency and zero
price/performance products to date.
Foundation technology – CoolSiC™ Schottky diodes 650 V G5
The established CoolSiC™ Schottky diodes G5 product family has been optimized aer all key aspects including
junction structure, substrate and die attach. It represents a well-balanced product family which oers state-of-the-art
performance and high surge current capability at a competitive cost level.
Innovation: optimized junction, substrate and die attach
Infineon’s SiC Schottky diode generation 5 is optimized with regard to all key aspects relevant for high-power and
high-eiciency SMPS applications.
Junction: merged PN structure
On the junction level, it has an optimized merged PN
structure. Compared to competitors, Infineon’s SiC diode
has an additional P-doped area, which, together with
the N-doped EPI layer, forms a PN junction diode. Thus,
it is a combination of Schottky diode and PN junction
diode. Under normal conditions it works like a standard
Schottky diode. Under abnormal conditions such as
lighting, AC line drop-out, it works like a PN junction
diode. At high current level, the PN junction diode has a
significantly lower forward voltage (VF) than the Schottky
diode, which leads to less power dissipation, thus
significantly improving the surge current capability.
Substrate: thin wafer technology
On the substrate level, Infineon introduced the thin wafer
technology. At the later stage of our SiC diode production,
the thin wafer process is used to reduce the wafer
thickness by about two-thirds, which significantly reduces
the substrate resistance contribution, thus, improving
both forward voltage (VF) and thermal performance.
Backside and
packaging
SiC substrate
Field stop layer
EPI
layer
Al
Al wire bond
Ti
110 µm
p+ p+p+
p+
p+
60
50
40
30
20
10
00 2 4 6
8
VF [V]
I
F
[A/mm
2
]
Generation 5 Generation 2, 3
0
5
10
15
20
25
30
35
40
0.00 2.00 4.00 8.00 10.00 12.00 14.00
IF (A)
VF (V)
Bipolar PN diode
forward characteristic
Schottky diode
forward characteristic
Combined
characteristic
surge current
RthJC=2.0 K/W RthJC=1.5 K/W
Diusion
soldering
Die attach: diusion soldering
On the backside, package level diusion soldering is
introduced, which significantly improves the thermal
path between lead frame and the diode, enhancing the
thermal performance. With the same chip size and power
dissipation, the junction temperature is reduced by 30°C.
www.infineon.com/sic
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
168
For more details on the product,
click on the part number.
G2*
G3
G5
G6
Performance (eiciency, density)
Price
* G2 is discontinued
CoolSiC™ Schottky diodes
In terms of eiciency, the 8 A G6 device has been tested in CCM PFC. The maximum output power is 3.5 kW. The le
figure shows the relative eiciency at 65 kHz, while the right figure shows the relative eiciency at 130 kHz. This shows
that Infineon’s CoolSiC™ Schottky diode G6 delivers better eiciency over the full load range, keeping this advantage
even at 130 kHz, therefore meeting the needs of designers who want to increase the switching frequencies in their
designs to attain more power density.
Latest development - CoolSiC™ Schottky diodes 650 V G6
The CoolSiC™ Schottky diodes G6 product family introduces a novel and proprietary Schottky metal system. This
contributes to the reduction of the forward voltage (VF) to levels which are diicult, determining a measurable decrease
of conduction losses. Infineon’s CoolSiC™ Schottky diodes enable optimum eiciency and ruggedness. Lower forward
voltage (VF) means lower conduction loss, and lower capacitive charge (Qc) means lower switching loss. Qc x VF is the
figure of merit for eiciency, and comparison indicates that the latest generation 6 products have the lowest Qc x VF on the
market. Infineon’s CoolSiC™ Schottky diodes oer a surge current robustness far better than the one oered by the most
eicient products. Thus, under abnormal conditions, this surge current capability oers excellent device robustness.
Eiciency comparison
www.infineon.com/coolsic-g6
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-1.00
-1.02
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-1.00
-1.02
Eiciency dierence [%]
Output power [% of nominal]
Relative eiciency @ 65 kHz Relative eiciency @ 130 kHz
10 20 30 40 50 60 70 80 90 100
Eiciency dierence [%]
Output power [% of nominal]
10 20 30 40 50 60 70 80 90 100
G6 Competitor 1 Competitor 2 Competitor 3
The best price performance
CoolSiC™ Schottky diodes G6 are the outcome of Infineon’s continuous
technological and process improvements which enable the design and
development of SiC-based products, making them more price-competitive
and increasing performance across generations. As a result, G6 is Infineon’s
best price/performance CoolSiC™ Schottky diode generation, oering
the highest cost-eiciency. In addition, Infineon oers the reliability of
collaborating with the industry leader. Customers can leverage Infineon’s
proven quality and supply chain reliability. They can benefit from “one-
stop-shop” advantages and maximize system performance, combining
CoolSiC™ Schottky diodes with the SJ MOSFETs of the CoolMOS™ 7 family,
such as 600 V C7, 650 V C7, 600 V G7, 650 V G7 and 600 V P7.
A comprehensive portfolio
The combined G6 and G5 CoolSiC™ Schottky diode 650 V diode portfolio oers a wide choice of packages and ampere
class granularity to allow the best fit to application. G6 comes in double DPAK, the first top-side cooled surface mount
package, which allows thermal decoupling of PCB to chip junction and enables higher power dissipation and improved
system lifetime thanks to the reduced board temperature.
169
For more details on the product,
click on the part number.
CoolSiC™ Schottky diodes
www.infineon.com/sicdiodes1200v
CoolSiC™ Schottky diodes 1200 V
A new level of system eiciency and reliability
By using hybrid Si power switch/SiC diode sets, industrial application designers will gain flexibility for system
optimization compared to purely silicon-based solutions. System improvements such as higher output power,
greater eiciency or higher switching frequency are enabled by SiC diodes. By implementing CoolSiC™ diodes generation 5,
for example in Vienna rectifier topology, in combination with Infineon’s 650 V TRENCHSTOP™ IGBTs and 650 V
CoolMOS™ MOSFETs, designers can achieve outstanding system level performance and reliability.
One of most commonly used topologies for EV DC charging
650 V Si IGBT/Si SJ MOSFET and 1200 V SiC diode/ultrafast Si diode in a Vienna rectifier topology, fsw=48 kHz
96.0
96.5
97.0
97.5
98.0
98.5
99.0
0 1000
CoolMOS™
w. SiC diode
w. Si diode
IGBT
CoolMOS™
IGBT
2000 3000 4000 5000
Output power [W]
650 V SJ MOSFET + 1200 V SiC diode
(IPW65R045C7 + IDW15G120C5B)
Eiciency [%]
650 V IGBT + 1200 V SiC diode
(IKW50N65EH5 + IDW15G120C5B)
650 V SJ MOSFET + 1200 V Si diode
(IPW65R045C7 + Vendor A)
650 V IGBT + 1200 V Si diode
(IKW50N65EH5 + Vendor A)
Features and benefits
Key benefits
System eiciency improvement over Si-based diodes
Enabling higher frequency/increased power density solutions
High system reliability by extended surge current
Reduced cooling requirements through lower diode losses and lower case
temperatures
System size/cost saving due to reduced heatsink requirements and
smaller magnetics
Key features
Zero Qrr leading to no reverse recovery losses
High surge current capability up to fourteen times of the nominal current
Tight forward voltage distribution
Temperature-independent switching behavior
Low forward voltage (VF = 1.4 V) even at high operating temperature
Available in both through-hole and SMD packages
Up to 40A-rated diode
Auxiliary
power supply
PWM
Generation ADC
EiceDRIVER™ EiceDRIVER™
6x 650 V CoolMOS™/
TRENCHSTOP™ 5
4x 1200 V
CoolSiC™
MOSFET
4x 1200 V
CoolSiC™
Schottky
diode Gen5
6x 1200 V CoolSiC™
Schottky diode Gen5
Vienna rectifier Full-bridge LLC
SiC vs. Si diode
›+0.8% higher eiciency
›Increased output power is possible
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
170
For more details on the product,
click on the part number.
SiC diodes product portfolio
www.infineon.com/sic
CoolSiC™ Schottky diodes 650 V G5 ACTIVE
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 D2PAK R2L ThinPAK 8x8
2
IDH02G65C5 IDK02G65C5 IDL02G65C5
3
IDH03G65C5 IDK03G65C5
4
IDH04G65C5 IDK04G65C5 IDL04G65C5
5
IDH05G65C5 IDK05G65C5
6
IDH06G65C5 IDK06G65C5 IDL06G65C5
8
IDH08G65C5 IDK08G65C5 IDL08G65C5
9
IDH09G65C5 IDK09G65C5
10
IDH10G65C5 IDW10G65C5 IDK10G65C5 IDL10G65C5
12
IDH12G65C5 IDW12G65C5 IDK12G65C5 IDL12G65C5
16
IDH16G65C5 IDW16G65C5
20
IDH20G65C5 IDW20G65C5B IDW20G65C5
24
IDW24G65C5B
30/32
IDW32G65C5B IDW30G65C5
40
IDW40G65C5B IDW40G65C5
CoolSiC™ Schottky diodes 650 V G6 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 Double DPAK D2PAK R2L ThinPAK 8x8
4
IDH04G65C6 IDDD04G65C6
6
IDH06G65C6 IDDD06G65C6
8
IDH08G65C6 IDDD08G65C6
10
IDH10G65C6 IDDD10G65C6
12
IDH12G65C6 IDDD12G65C6 *
16
IDH16G65C6 IDDD16G65C6
20
IDH20G65C6 IDDD20G65C6
*For more information on the product, contact our product support
171
For more details on the product,
click on the part number.
CoolSiC™ Schottky diodes 650 V G6 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 Double DPAK D2PAK R2L ThinPAK 8x8
4
IDH04G65C6 IDDD04G65C6
6
IDH06G65C6 IDDD06G65C6
8
IDH08G65C6 IDDD08G65C6
10
IDH10G65C6 IDDD10G65C6
12
IDH12G65C6 IDDD12G65C6 *
16
IDH16G65C6 IDDD16G65C6
20
IDH20G65C6 IDDD20G65C6
www.infineon.com/sic
„B“ in product name refers to common-cathode configuration
CoolSiC™ Schottky diodes 1200 V G5 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 R2L DPAK R2L D2PAK R2L
2
IDH02G120C5 IDM02G120C5 IDK02G120C5
5
IDH05G120C5 IDM05G120C5 IDK05G120C5
8
IDH08G120C5 IDM08G120C5 IDK08G120C5
10
IDH10G120C5 IDW10G120C5B IDWD10G120C5 IDM10G120C5 IDK10G120C5
15/16
IDH16G120C5 IDW15G120C5B IDWD15G120C5 IDK16G120C5
20
IDH20G120C5 IDW20G120C5B IDWD20G120C5 IDK20G120C5
30
IDW30G120C5B IDWD30G120C5
40
IDW40G120C5B IDWD40G120C5
CoolSiC™ Schottky diodes 600 V G3 ACTIVE
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 DPAK R2L D2PAK ThinPAK 8x8
3
IDH03SG60C IDD03SG60C
4
IDH04SG60C IDD04SG60C
5
IDH05SG60C IDD05SG60C
6
IDH06SG60C IDD06SG60C
8
IDH08SG60C IDD08SG60C
9
IDH09SG60C IDD09SG60C
10
IDH10SG60C IDD10SG60C
12
IDH12SG60C IDD12SG60C *
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
172
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Nomenclature
CoolSiC™ Schottky diodes G2 and G3
Continuous forward current
[A]
IDHXSXGC
Company
I = Infineon
Specifications
C = Surge current stable
Device
D = Diode
Package Type
D = DPAK
H = TO-220 R2L
B = D2PAK
D = DPAK = TO-220
V = TO-220 FullPAK
W = TO-247
Breakdown voltage
60 = 600 V
G
= Low thermal resistance
(diffusion soldering)
Technology
S = SiC diode
CoolSiC™ Schottky diodes G5 and G6
Continuous forward current
[A]
IDKXGCX5B
Company
I = Infineon
Series name
5 = Generation 5
6 = Generation 6
B
= Common-cathode configuration
Device
D = Diode
Package type
H = TO-220 R2L
W = TO-247
K = D2PAK R2L
L = ThinPAK 8x8
M = DPAK R2L
WD = TO-247 R2L
Specifications
C = Surge current stable*
Breakdown voltage
65 = 650 V
120 = 1200 V
G = Low thermal resistance
*Generation
SiC diodes nomenclature
www.infineon.com/sic
173
For more details on the product,
click on the part number.
Silicon power diodes
Silicon power diodes
Filling the gap between SiC diodes and emitter controlled diodes
The Rapid diode family complements Infineon’s existing high-power 600V/650V diode portfolio by filling the gap
between SiC diodes and previously released emitter controlled diodes. They oer a perfect cost/performance balance
and target high-eiciency applications switching between 18 and 100 kHz. Rapid 1 and Rapid 2 diodes are optimized to
have excellent compatibility with CoolMOS™ and high speed IGBTs (insulated gate bipolar transistor)
such as the TRENCHSTOP™ 5 and HighSpeed 3.
The Rapid 1 diode family
Rapid 1 is forward voltage drop (VF) optimized to address low switching frequency applications between 18 kHz and
40 kHz, for example, air conditioner and welder PFC stages.
› 1.35 V temperature-stable forward voltage (VF)
› Lowest peak reverse recovery current (Irrm)
› Reverse recovery time (trr) < 100 ns
› High soness factor
The Rapid 2 diode family
Rapid 2 is Qrr/trr optimized hyperfast diode to address high-speed switching applications between 40 kHz and 100 kHz,
typically found in PFCs in high eiciency switch mode power supplies (SMPS) and welding machines.
› Lowest reverse recovery charge (Qrr): VF ratio for best-in-class performance
› Lowest peak reverse recovery current (Irrm)
› Reverse recovery trr < 50 ns
› High soness factor
Emitter controlled diodes
Rapid 2 SiCRapid 1
0 Hz 18 kHz 40 kHz 100 kHz >100 kHz
1000
900
800
700
600
500
400
300
200
100
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
30 A competitor A
IDW30E65D1
IDP08E65D2 8 A competitor C
8 A competitor D
30 A competitor B
Q
rr
[nC]
VF [V]
V
F
- Q
rr
trade-o, Rapid 1 diF/dt = 1000 A/us, Rapid 2 diF/dt = 300 A/us
97.6
97.4
97.2
97.0
96.8
96.6
96.4
96.2
96.0
95.8
95.6
0 100 200 300 400 500 600 700 800
Eiciency [%]
Output Power [W]
IDP08E65D2
Competitor S
Competitor F
PFC Eiciency @ 60 kHz – Vin = 230 V
98.2
98.0
97.8
97.6
97.4
97.2
97.0
96.8
96.6
96.4
96.2
0 200 400 600 800 1000 1200 1400 1600
Eiciency [%]
Output Power [W]
PFC Eiciency @ 70 kHz – Vin = 230 V
Rapid 2
SiC
www.infineon.com/rapiddiodes
www.infineon.com/ultrasoftdiodes
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
174
For more details on the product,
click on the part number.
Silicon power diodes
Rapid 2 diodes
650
V product family
Continuous
current Ic
@TC=100°C
[A]
TO-220 TO-220
FullPAK
TO-220
common cathode
TO-247 TO-247
common cathode
8
IDP08E65D2 IDV08E65D2
15
IDP15E65D2 IDV15E65D2 IDW15E65D2
20
IDP20E65D2 IDP20C65D2 IDW20C65D2
30
IDP30E65D2 IDV30E65D2 IDP30C65D2 IDW30C65D2
40
IDP40E65D2 IDW40E65D2
80
IDW80C65D2
www.infineon.com/rapiddiodes
Rapid 1 diodes
650V product family
Continuous
current Ic
@TC=100°C
[A]
TO-220 TO-220
FullPAK
TO-247 TO-247
common cathode
TO-247
advanced isolation
8
IDP08E65D1
15
IDP15E65D1
20
IDV20E65D1
30
IDP30E65D1 IDW30E65D1 IDW30C65D1
40
IDW40E65D1 IDFW40E65D1E
60
IDW60C65D1 IDFW60C65D1
75
IDW75D65D1
80
IDW80C65D1
175
For more details on the product,
click on the part number.
www.infineon.com/ultrasodiodes
Emitter controlled diodes
600V and 1200V product families
Continuous
current Ic
@TC=100°C
[A]
TO-263
(D2PAK)
TO-220
Real 2-pin
TO-247
600V
30
IDW30E60
50
IDW50E60
75
IDW75E60
100
IDW100E60
1200V
12
IDP12E120
18
IDP18E120
30
IDB30E120 IDP30E120
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
176
For more details on the product,
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Nomenclature
Silicon power diodes
Company
I
= Infineon
I D
Device
D
= Diode
Package type
P
= TO-220
V
= TO-220 FullPAK
W
= TO-247
B
= TO-263 (DPAK)
FW
= TO-247 Advanced Isolation
D1 = Rapid 1
D2 = Rapid 2
W 75 E65D1
Nominal
current
(@ 100°C) [A]
Nominal voltage
Divided by 10 (650 V/10 = 65)
Technology
E = Std. diode configuration
– replacement for FullP
AK
packagesorTO-247 +
mediumperformance
insulator
C = Common cathode
D = Dual anode
www.infineon.com/rapiddiodes
Silicon power diodes
177
For more details on the product,
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Infineon support for wide bandgap semiconductors
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/wbg
www.infineon.com/sic
www.infineon.com/rapiddiodes
www.infineon.com/ultrasodiodes
www.infineon.com/gan
www.infineon.com/gan-eicedriver
Simulation
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
178
For more details on the product,
click on the part number.
› 650 V TRENCHSTOP™ 5 IGBT
› 1200 V IGBT families
› Lower power drive IGBT portfolio
› TRENCHSTOP™ IGBT6
› TRENCHSTOP™ advanced isolation
Discrete IGBTs
› Integrated Power Device – IPD protect
› TRENCHSTOP™ 5 selection tree
› IGBT selection tree
› Discrete IGBTs product portfolio
› IGBT nomenclature
179
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
180
For more details on the product,
click on the part number.
Discrete IGBTs
Discrete IGBTs
Market leadership through groundbreaking innovation and application focus
Resolute to achieve the highest standards in performance and quality, Infineon oers a comprehensive portfolio of
application-specific discrete IGBTs.
Discrete IGBT overview
New best-in-class technologies and applications
Technology Application Gate Driver Family
TRENCHSTOP™ 5
H5/F5 650V
EiceDRIVER™ isolated gate driver (1EDC60H12AH)
EiceDRIVER™ 650 V SOI gate driver (2ED2184S06F)
EiceDRIVER™ low side gate driver (1ED44175N01B)
TRENCHSTOP™ 5
L5 650V
EiceDRIVER™ isolated gate driver (1EDC20I12MH)
Rapid diode
650V
N/A
RC-H5
650V/1200V/1350V
EiceDRIVER™ isolated gate driver (1EDC20I12MH)
EiceDRIVER™ low side gate driver (1ED44175N01B)
RC-E
1200V
EiceDRIVER™ isolated gate driver (1EDC20I12MH)
EiceDRIVER™ low side gate driver (1ED44175N01B)
WR5
650V
EiceDRIVER™ low side gate driver (1ED44175N01B)
RC-drives
RC-drives fast
600V
EiceDRIVER™ 650 V SOI gate driver (2ED2184S06F)
EiceDRIVER™ 650 V SOI gate driver (6EDL04I06PT)
RC-D2
600 V
EiceDRIVER™ 650 V SOI gate driver (2ED2184S06F)
EiceDRIVER™ 650 V SOI gate driver (6EDL04I06PT)
TRENCHSTOP™ 5
S5 650V
EiceDRIVER™ isolated gate driver (1EDC20I12MH)
EiceDRIVER™ 650 V SOI gate driver (2ED2184S06F)
TRENCHSTOP™
IGBT6 650 V
EiceDRIVER™ 650 V SOI gate driver (2ED2106S06F)
EiceDRIVER™ 650 V SOI gate driver (6EDL04I06PT)
TRENCHSTOP™
IGBT6 1200 V
EiceDRIVER™ isolated gate driver (1ED020I12-F2)
EiceDRIVER™ 1200 V level shi gate driver (6ED2230S12T)
www.infineon.com/igbtdiscretes
www.infineon.com/gatedriver
P-SOT-223-4 SMD
SMD,
single transistor,
small signal
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-220
FullPAK
TO-247 TO-247
4-pin
TO-
247PLUS
TO-
247PLUS
4-pin
TRENCHSTOP™
advanced
isolation TO-247
Package options
Voltage class 600V, 650V, 1100V, 1200V, 1350V, 1600V 600 V, 650 V
Configuration
DuoPack (with diode), single IGBTs Duopack IGBTs
(with diode) and
single diodes
Continuous
collector current
TC = 100°C
3-120 A 40-90 A
181
For more details on the product,
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TRENCHSTOP™ 5 L5
Best-in-class IGBT low VCE(sat) IGBT
VCE(sat) IGBT – 1.05 V
Best trade-o VCE(sat) Vss Ets for frequencies below 20 kHz
Solar, UPS, welding
› Ultralow frequency converters
› Three-level inverter type I NPC 1 and NPC 2
› Modified HERIC inverter
› AC output (aluminum/magnesium welding)
TRENCHSTOP™ 5 S5
Best-in-class ease-of-use IGBT
Elimination of:
› Collector-emitter snubber capacitor and gate capacitor in low induc-
tance designs (<100 nH)
› Soer switching than TRENCHSTOP™ 5 H5
UPS, battery charger, solar, welding
› Medium frequency converters
› Multilevel inverter stages
› Output stages
› PFC
TRENCHSTOP™ 5 H5/F5
Best-in-class high frequency IGBT
› Bridge to SJ MOSFET performance
› Highest eiciency, especially under light load conditions
UPS, solar, welding
› High frequency converters
› Multilevel inverter stages
› Output stages
› PFC
TRENCHSTOP™ 5 R5
Price/performance optimized
application specific IGBT
Induction cooking – RC-H5
Half-bridge topologies in induction cooking appliances and other
resonant switching applications
TRENCHSTOP™ 5 WR5
Price optimized application specific IGBT for zero current
switching (ZCS)
› Optimized full rated hard switching turn-o typically found in welding
› Excellent RG controllability
› So recovery plus low reverse recovery charge (Qrr) for diode
Air conditioning, welding
› Medium frequency converters
› Zero-voltage switching
› PFC
650 V TRENCHSTOP™ 5
650 V TRENCHSTOP™ 5 IGBT
In terms of switching and conduction losses, there is no other IGBT on the market that can match the performance
of the TRENCHSTOP™ 5. Wafer thickness has been reduced by more than 25 percent, which enables a dramatic
improvement in both switching and conduction losses, while providing an increased breakthrough voltage of 650V.
Based on TRENCHSTOP™ 5 IGBT technology, Infineon has developed six dierent product families optimized for
specific applications, allowing designers to optimize for high eiciency, system cost or reliability demands of the
market. The quantum leap of eiciency improvement provided by the TRENCHSTOP™ 5 IGBT families opens up new
opportunities for designers to explore. EiceDRIVER™ isolated gate driver like 1ED compact family 650 V IGBT in solar
and UPS applications. EiceDRIVER™ low side gate driver with over current protection is widely used in induction
cooking application and PFC stage.
Highest power density in D2PAK footprint
Infineon’s ultrathin TRENCHSTOP™ 5 IGBT technology allows higher power density in a smaller chip size. Infineon is the
first on the market able to fit a 40 A 650 V IGBT with 40 A diode in D2PAK – 25 percent higher than any other competitors
that are oering maximum 30 A DuoPack IGBT in D2PAK. Now it is possible to upgrade the available SMD designs for
higher power output Pout.
Features and benefits
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
150 kHz
TRENCHSTOP™ 5 L5 (hard switching)
TRENCHSTOP™ 5 S5 (hard switching)
TRENCHSTOP™ 5 WR5 (resonant switching)
RC-H5 (resonant switching)
TRENCHSTOP™ 5 H5 (hard switching)
TRENCHSTOP™ 5 F5 (hard switching)
www.infineon.com/trenchstop5
www.infineon.com/gatedriver
Key benefits
Higher power design with D2PAK package
Upgrade of the available designs for higher
Less paralleling for improved system reliability and less complexity
Smaller PCB, more compact system design, lighter
Key features
The highest power density – 40 A IGBT co-packed with a 40 A diode in D2PAK
25 percent higher current than any other competitor
Superior eiciency of leading TRENCHSTOP™ 5 technology
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
182
For more details on the product,
click on the part number.
1200 V discrete IGBTs
1200 V IGBT families
The 1200 V TRENCHSTOP™ 2 IGBT is optimized for low conduction losses with the lowest saturation voltage VCE(sat)
of 1.75 V. A so fast recovery emitter controlled diode further minimizes the turn-on losses.
The 1200 V HighSpeed 3 discrete IGBTs provides the lowest losses and the highest reliability for switching above
20 kHz. Transition to fast switching high speed devices allows reduction in the size of the active components (25-70 kHz).
The new 1200 V IGBT generation, TRENCHSTOP™ IGBT6, is designed to meet requirements of high eiciency, lowest
conduction and switching losses in hard switching and resonant topologies, operating at switching frequencies above
15 kHz. The IGBT6 devices can be used as direct replacement for the Highspeed 3 H3 series, without any changes of the
design. Such plug-and-play replacement of H3 with new S6 IGBT may benefit up to 0.2 percent eiciency improvement.
The RC-H5 family is the latest generation in the RC-H series of reverse conducting IGBT. With a monolithically integrated
diode, they oer optimized performance for resonant switching applications such as induction cooking. R5 devices are
also available in 1350 V and 1600 V blocking voltage.
EiceDRIVER™ isolated gate driver like 1ED Compact family and EiceDRIVER™ 1200 V level shi gate driver family are
perfect match for the 1200 V IGBT in motor control, general purpose inverter, solar, and UPS applications. EiceDRIVER™
low side gate driver with over current protection is widely used in induction cooking application.
RC-H5
World-class TRENCHSTOP™ RC-H products
High performance and low losses
Induction cooking
Resonant switching
Medium to high frequency converters
RC-E
Competitive TRENCHSTOP™ RC-E
Price versus performance leader
Induction cooking
Resonant switching
Low to medium power cookers
TRENCHSTOP™ 2
Best-in-class 1200V IGBT
› Outstanding eiciency
› Lowest conduction and switching losses
› Market proven and recognized quality leader
Motor control, general purpose inverter, solar, UPS
Low frequency converters
HighSpeed 3 H3
High speed/high power IGBT
› First tailless/low loss IGBT on market
› Market proven and recognized quality leader
Solar, UPS, welding
Medium frequency converters
TRENCHSTOP™ IGBT6
New low switching losses and high power IGBTs
› Optimized for operation at 15 – 40 kHz
› Best combination of low VCE(sat) of 1.85 V and low switching losses
UPS, solar, welding
Medium frequency converters
0
5 10 15 20 25 30 35 40 45 50 55
60 kHz
TRENCHSTOP™ R3/R5 (resonant switching)
HighSpeed 3 H3 (hard switching)
TRENCHSTOP™ 2 (hard switching)
TRENCHSTOP™ IGBT6 S6, H6 (hard switching)
TRENCHSTOP™ RC-E (resonant switching)
www.infineon.com/rch5
www.infineon.com/rc-e
www.infineon.com/igbt6-1200v
www.infineon.com/gatedriver
183
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Lower power drive IGBT portfolio
650 V TRENCSTOP™ IGBT6 and 600 V RC-D2
Motor drives up to 1 kW are used in a wide variety of applications from home appliance fans and compressors
to pumps. The market for these products demands design flexibility, EMI performance and easy controllability.
Therefore, these compact motors require power electronics with the lowest losses and best thermal performance.
The TRENCHSTOP™ IGBT6 family of discrete devices has been designed for the lowest switching losses, which is
particularly important in systems with higher switching frequencies up to 30 kHz. Additionally, the IGBTs are co-packed
with the so, fast recovery Rapid 1 anti-parallel diodes for the lowest total losses. With a higher blocking voltage at 650 V,
and short circuit rating, TRENCHSTOP™ IGBT6 is a key contributor to robust motor designs.
Together with EiceDRIVER™ 650 V SOI gate driver 2ED210x and 2ED218x family, Infineon provides the whole solution for
motor drives and home appliances.
The new RC-D2 family of discrete devices has been cost optimized in surface mounted packages. The device contains a
monolithically integrated diode and has HV-H3TRB ruggedness capability. With a blocking voltage at 600 V, and short circuit
rating, the RC-D2 is a key contributor to cost-eective motor designs. The RC-H5 family is the latest generation in the RC-H
series of reverse conducting IGBT. With a monolithically integrated diode, they oer optimized performance for resonant
switching applications such as induction cooking. R5 devices are also available in 1350 V and 1600 V blocking voltage.
EMI performance
Features and benefits
› Rg(on) and Rg(o) is selected to meet
dv/dt of 2 V/ns at 500 mA and Tj of
100°C
› IGBTs (IKD04N60RC2) are easily
controllable by optimizing Rg values
› CoolMOS™ (IPS60R1K0PFD7S) EMI
performance can be enhanced with
additional passive components
www.infineon.com/IGBT6
www.infineon.com/gatedriver
Low power IGBT portfolio
Example
application:
refrigerator
compressor
Design
flexibility
and
customization
TRENCHSTOP™
IGBT6
and RC-D2
Full load
operation
and
EMI
performance
Discretes
IPM
High
integration
and
reduced
footprint
Light load
eiciency
and
ESD
immunity
CoolMOS™
PFD7
Key benefits
Enable space limited application
Performance improvement
Cost optimized solution
SC protection
No need for additional components on PCB
Key features
Available in surface mounted packages
IGBT6 co-packed with and without diodes (DPAK)
RC-D2 monolithically integrated diode (SOT, DPAK)
SC rating between 3 µs and 5 µs
Low EMI due to easy controllability
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Rg(on)=404
ΩR
g(on)=0 Ω
Rg(on)=2200 ΩR
g(o)=520 Ω
10 20 30 40 50
E
on
[µJ]
dv/dt(on) [V/ns]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.010 20 30 40 50
60
E
on
[µJ]
dv/dt(on) [V/ns]
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
184
For more details on the product,
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TRENCHSTOP™
advanced isolation
www.infineon.com/igbt6-1200V
www.infineon.com/gatedriver
TRENCHSTOP™ IGBT6
New generation 1200 V fast speed IGBT
The new 1200 V IGBT generation TRENCHSTOP™ IGBT6 is designed to meet requirements of high eiciency, lowest
conduction and switching losses in hard switching and resonant topologies operating at switching frequencies
above 15 kHz.
The TRENCHSTOP™ IGBT 6 is released in two product families – low conduction losses optimized S6 series and
improved switching losses H6 series. The TRENCHSTOP™ IGBT6 S6 series features low conduction losses of
1.85 V collector-emitter saturation voltage VCE(sat) combined with low switching losses of the HighSpeed 3 H3 series.
TRENCHSTOP™ IGBT6 H6 series is optimized for low switching losses, provides ~15 percent lower total switching
losses when compared to predecessor generation H3.
Very so, fast recovery anti-parallel emitter controlled diode is optimized for fast recovery while still maintaining a
high level of soness complementing to an excellent EMI behaviour.
Positive temperature coeicient allows easy and reliable device paralleling. Very good RG controllability allows
adjustment of IGBT switching speed to the requirements of application.
EiceDRIVER™ isolated gate driver like 1ED Compact family and EiceDRIVER™ 1200 V level shi gate driver family are
perfect match for the 1200 V IGBT6 in motor control, general purpose inverter, solar, and UPS applications.
300
250
200
150
100
50
0
Switching losses E
tot
/I
Cnom
[μJ/A]
Forward voltage VCE(sat) [V]
Datasheet specifications @ 175°C
TRENCHSTOP™ 2
HighSpeed 3
10 20 30 40 50 60 70 80 90 100
CT2
CS6
BH6
CH3
H3
Lower VCE(sat)
Lower Esw
Features and benefits
Key benefits
Best combination of switching and conduction losses for switching frequency 15–40 kHz
Low conduction losses with 1.85 VCE(sat) for S6 series
High RG controllability
Low EM
Full rated, robust freewheeling diode
Key features
Easy, plug and play replacement of predecessor HighSpeed 3 H3 IGBT
0.15 percent system eiciency improvement when changing from
H3 to S6 in TO-247-3
0.2 percent system eiciency improvement when changing from
H3 to S6 in TO-247 PLUS 4-pin
185
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TRENCHSTOP™
advanced isolation
www.infineon.com/advanced-isolation
www.infineon.com/gatedriver
TRENCHSTOP™ advanced isolation
Fully isolated TO-247 package with industry leading IGBTs
TRENCHSTOP™ advanced isolation solution breaks the limits reached by traditional packaging and isolation
techniques. This new isolated package enables the highest power density, the best performance and the lowest
cooling eort thanks to an eective and reliable thermal path from the IGBT die to the heatsink.
In addition to providing 100 percent electrical isolation, TRENCHSTOP™ advanced isolation also eliminates the need
for thermal grease or thermal interface sheets. The new package delivers at least 35 percent lower thermal resistivity,
helping designers to increase power density, as well as lower system complexity and assembling costs.
This new package solution allows industrial and home appliance designs to fully utilize the high performance of
TRENCHSTOP™ IGBTs without compromises for isolation and cooling.
Features and benefits
Rth(j-h)
TO-247
FullPAK
50% lower
35% lower
TO-247 with
isolation film
1)
Advanced
isolation
1)
Isolation material: standard polyimide based reinforced carrier
insulator film with 152 µm thickness, 1.3 W/mK thermal conductivity
Thermal resistivity of package and isolation types
Key benefits
Up to 35 percent reduction in assembly time
reduces manufacturing cost
Increased power density
Improved reliability from higher yield and no isolation film misalignment
Less EMI filter design eort
Decreased heatsink size
Key features
2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
100 percent tested isolated mounting surface
Lowest Rth(j-h)
Low coupling capacitance, 38 pF
No need for isolation film or thermal interface material
0 5 10 15 20 25 30 35 40 45 50 55 60 kHz
TRENCHSTOP™
HighSpeed 3 H3
Fast H5
Medium-speed S5
Reverse-conducting RS5
No SC rating
0 µsec
SC rating
5 µsec
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
186
For more details on the product,
click on the part number.
Integrated Power Device
Integrated Power Device – IPD protect
IEWS20R5135IPB - 20 A 1350 V TRENCHSTOP™ IGBT with integrated protective
functions
Infineon’s IEWS20R5135IPB is a best-in-class IGBT in RC-H5 technology with a unique protective gate driver IC co-
packed in a TO-247 6-pin package for induction heating applications. IPD protect has, not only the industry’s best IGBT
performance considering blocking voltage, static losses and conduction losses in induction cooktop applications and
other so switching application, but also integrated protection functions.
Its original concept provides protection against overvoltage, overcurrent, and overtemperature and additional features
as a unique active clamp control, fault condition notification, and a special two level turn-on gate driving current that
reduces significantly the typical high start-up peak current. These integrated protection functions provide a simple and
robust solution for increased overall system reliability.
Features and benefits
Key benefits
Increased overall reliability, reducing costs for replacement / rework
Reduced board complexity and design-in eort
Simplified BOM and reduced cost for total solution
Best-in-class performance IGBT
Key features
Reverse conducting IGBT with monolithic body diode designed for so switching
Integrated Driver with
› Overvoltage and overcurrent protection
› Active clamp control circuit
› Programmable overvoltage threshold
› Programmable cycle-by-cycle overcurrent threshold
› Integrated gate drive with 2 level turn-on current
› Temperature warning
› Over-temperature protection
› VCC UVLO
› Integrated ESD protection and latch immunity on all pins
TO-247 6-pin package
www.infineon.com/IPD-Protect
VAC
Lres
Cres
CBUS IEWS20R5135IPB
AUX
Microcontroller
Driver
and protection
RC-IGBT
187
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
188
TRENCHSTOP™ 5 selection tree
TRENCHSTOP™ 5 selection tree
www.infineon.com/trenchstop5
www.infineon.com/gatedriver
650 V
Free wheeling diode (FWD)
50 Hz-20 kHz
low speed
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
IGW30N65L5 IGP20N65H5/F5
IGP30N65H5/F5
IGP40N65H5/F5
IGW30N65H5/F5
IGW40N65H5/F5
IGW50N65H5/F5
IGZ50N65H5
IGZ75N65H5
IGZ100N65H5
IGB15N65S5
IGB20N65S5
IGB50N65S5
IGB50N65H5
IKW30N65EL5
IKW30N65NL5
IKW75N65EL5
IKZ75N65EL5
Corresponding best fit IGBT
Corresponding best fit IGBT
TRENCHSTOP™ 5
(H5/F5/S5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
30 kHz-120 kHz
high speed
50 Hz-20 kHz
low speed
IKW30N65WR5
IKW40N65WR5
IKW50N65WR5
RC TRENCHSTOP™ 5
(WR5)
> 20 kHz-60 kHz
high speed
No
Yes
IKP08N65H5
IKP15N65H5
IKP20N65H5
IKP30N65H5
IKP40N65H5
IKA08N65H5
IKA15N65H5
IKW30N65H5
IKW40N65H5
IKW50N65H5
IKW50N65EH5
IKW75N65EH5
IKZ50N65EH5
IKZ50N65NH5
IKZ75N65EH5
IKZ75N65NH5
IKB15N65EH5
IKB20N65EH5
IKB30N65EH5
IKB40N65EH5
TRENCHSTOP™ 5
(H5)
30 kHz-100 kHz
high speed
IKB40N65EF5
IKP08N65F5
IKP15N65F5
IKP20N65F5
IKP30N65F5
IKP40N65F5
IKA08N65F5
IKA15N65F5
IKW30N65F5
IKW40N65F5
IKW50N65F5
TRENCHSTOP™ 5
(F5)
60 kHz-120 kHz
ultra-high speed
IKW30N65ES5
IKW40N65ES5
IKW50N65ES5
IKW75N65ES5
IKZ50N65ES5
IKZ75N65ES5
IKB30N65ES5
IKB40N65ES5
„So“
TRENCHSTOP™ 5 (S5)
10 kHz-40 kHz
high speed
189
TRENCHSTOP™ 5 selection tree
650 V
Free wheeling diode (FWD)
50 Hz-20 kHz
low speed
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
IGW30N65L5 IGP20N65H5/F5
IGP30N65H5/F5
IGP40N65H5/F5
IGW30N65H5/F5
IGW40N65H5/F5
IGW50N65H5/F5
IGZ50N65H5
IGZ75N65H5
IGZ100N65H5
IGB15N65S5
IGB20N65S5
IGB50N65S5
IGB50N65H5
IKW30N65EL5
IKW30N65NL5
IKW75N65EL5
IKZ75N65EL5
Corresponding best fit IGBT
Corresponding best fit IGBT
TRENCHSTOP™ 5
(H5/F5/S5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
30 kHz-120 kHz
high speed
50 Hz-20 kHz
low speed
IKW30N65WR5
IKW40N65WR5
IKW50N65WR5
RC TRENCHSTOP™ 5
(WR5)
> 20 kHz-60 kHz
high speed
No
Yes
IKP08N65H5
IKP15N65H5
IKP20N65H5
IKP30N65H5
IKP40N65H5
IKA08N65H5
IKA15N65H5
IKW30N65H5
IKW40N65H5
IKW50N65H5
IKW50N65EH5
IKW75N65EH5
IKZ50N65EH5
IKZ50N65NH5
IKZ75N65EH5
IKZ75N65NH5
IKB15N65EH5
IKB20N65EH5
IKB30N65EH5
IKB40N65EH5
TRENCHSTOP™ 5
(H5)
30 kHz-100 kHz
high speed
IKB40N65EF5
IKP08N65F5
IKP15N65F5
IKP20N65F5
IKP30N65F5
IKP40N65F5
IKA08N65F5
IKA15N65F5
IKW30N65F5
IKW40N65F5
IKW50N65F5
TRENCHSTOP™ 5
(F5)
60 kHz-120 kHz
ultra-high speed
IKW30N65ES5
IKW40N65ES5
IKW50N65ES5
IKW75N65ES5
IKZ50N65ES5
IKZ75N65ES5
IKB30N65ES5
IKB40N65ES5
„So“
TRENCHSTOP™ 5 (S5)
10 kHz-40 kHz
high speed
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
190
Discrete IGBTs selection tree
IGBT selection tree
www.infineon.com/igbtdiscretes
www.infineon.com/gatedriver
*Coming soon
* *For more information on the product, contact our product support
Diode commutation
IGBT
Frequency range
Voltage range
Part number
Applications
Induction cooking
Microwave
Multifunction printers
Half-bridge resonant
(Current resonance < 650 V)
Single switch
(Voltage resonance > 650 V)
Conduction loss optimized
Solar inverter
Asymmetrical bridge
Symmetrical full-bridge
Three-level type I or three-level type II converter
Motor control
Three-phase inverter
Full-bridge inverter
Single-phase inverter
Uninterruptable power supply
UPS bridge
Three-level type II converter
Major and small home appliances
Symmetrical full-bridge
Single-phase inverter
PFC
Battery charger
Welding
UPS
Solar
Energy storage
SMPS
Air conditioning
HVDC (telecom/data centers)
Totem pole PFC
PFC
Welding inverter
Full-brigde
Half-bridge
Two transistor forward
UPS
Three-level NPC1 and
NPC2 topology,
inner switches
Solar
Three-level NPC1 and
NPC2 topology,
inner switches
Welding
AC output
(Al/Mag welding)
UPS
Energy storage
Battery charger
Welding
Solar inverter
IHpccNvvvR3**
IHpccNvvvR5**
IHpccNvvvE1**
IHFW40N65R5S**
IEWS20R5135IPB**
IKpccN60R**
IKpccN60RF**
IKpccN60RC2*/**
IKpccN60T**
IKpccN60dTP**
IKpccT120…**
IGpccN60T**
IGpccN60TP**
IGpccT120**
IGpccN120T2**
IKpccN60H3**
IKpccN120H3**
IGpccN60H3**
IGpccN120H3**
IKpccN65H5**
IKpccN65F5**
IGpccN65H5**
IGpccN65F5**
IKpccN65dR5** IKpccN65dL5**
IGpccN65L5**
IKpccN65dS5**
650 V, 1100 V, 1200 V,
1350 V, 1600 V 600 V 600 V, 1200 V
IKpccN65dT6**
IKpccN120dS6**
IKpccN120dH6**
650 V, 1200 V
650 V650 V650 V650 V600 V, 1200 V
8 kHz – 60 kHz
RC series (monolythic) 2 kHz – 30 kHz
So
Hard/no diode for IG** parts
RC-drives (monolythic) TRENCHSTOP™ performance TRENCHSTOP™ IGBT6
So turn-o
TRENCHSTOP™ 5 (S5)
HighSpeed 3
(H3)
TRENCHSTOP™ 5
H5/F5
RC TRENCHSTOP™ 5
(WR5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
10 kHz – 40 kHz
medium speed
> 18 kHz – 60 kHz
high speed
10 kHz – 100 kHz
high speed
> 18 kHz – 60 kHz
high speed
50 Hz – 20 kHz
low speed
191
Diode commutation
IGBT
Frequency range
Voltage range
Part number
Applications
Induction cooking
Microwave
Multifunction printers
Half-bridge resonant
(Current resonance < 650 V)
Single switch
(Voltage resonance > 650 V)
Conduction loss optimized
Solar inverter
Asymmetrical bridge
Symmetrical full-bridge
Three-level type I or three-level type II converter
Motor control
Three-phase inverter
Full-bridge inverter
Single-phase inverter
Uninterruptable power supply
UPS bridge
Three-level type II converter
Major and small home appliances
Symmetrical full-bridge
Single-phase inverter
PFC
Battery charger
Welding
UPS
Solar
Energy storage
SMPS
Air conditioning
HVDC (telecom/data centers)
Totem pole PFC
PFC
Welding inverter
Full-brigde
Half-bridge
Two transistor forward
UPS
Three-level NPC1 and
NPC2 topology,
inner switches
Solar
Three-level NPC1 and
NPC2 topology,
inner switches
Welding
AC output
(Al/Mag welding)
UPS
Energy storage
Battery charger
Welding
Solar inverter
IHpccNvvvR3**
IHpccNvvvR5**
IHpccNvvvE1**
IHFW40N65R5S**
IEWS20R5135IPB**
IKpccN60R**
IKpccN60RF**
IKpccN60RC2*/**
IKpccN60T**
IKpccN60dTP**
IKpccT120…**
IGpccN60T**
IGpccN60TP**
IGpccT120**
IGpccN120T2**
IKpccN60H3**
IKpccN120H3**
IGpccN60H3**
IGpccN120H3**
IKpccN65H5**
IKpccN65F5**
IGpccN65H5**
IGpccN65F5**
IKpccN65dR5** IKpccN65dL5**
IGpccN65L5**
IKpccN65dS5**
650 V, 1100 V, 1200 V,
1350 V, 1600 V 600 V 600 V, 1200 V
IKpccN65dT6**
IKpccN120dS6**
IKpccN120dH6**
650 V, 1200 V
650 V650 V650
V6
50 V600 V, 1200 V
8 kHz – 60 kHz
RC series (monolythic) 2 kHz – 30 kHz
So
Hard/no diode for IG** parts
RC-drives (monolythic) TRENCHSTOP™ performance TRENCHSTOP™ IGBT6
So turn-o
TRENCHSTOP™ 5 (S5)
HighSpeed 3
(H3)
TRENCHSTOP™ 5
H5/F5
RC TRENCHSTOP™ 5
(WR5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
10 kHz – 40 kHz
medium speed
> 18 kHz – 60 kHz
high speed
10 kHz – 100 kHz
high speed
> 18 kHz – 60 kHz
high speed
50 Hz – 20 kHz
low speed
Discrete IGBTs selection tree
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
192
For more details on the product,
click on the part number.
TRENCHSTOP™ and RC-drives
600 V/650 V product family together with 650 V SOI gate driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D
2
PAK)
TO-220 TO-247
advanced
isolation
TO-220
FullPAK
TO-247 TO-247PLUS/
Super 247
(TO-247AA)
Single IGBT
4
IGU04N60T
6
IGD06N60T
IGD06N65T6 * IGP06N60T
10
IGD10N65T6 * IGB10N60T IGP10N60T
15
IGD15N65T6 * IGB15N60T IGP15N60T
30
IGB30N60T IGW30N60T
IGW30N60TP
40
IGW40N60TP
50
IGB50N60T IGP50N60T IGW50N60T
IGW50N60TP
75
IGW75N60T
IGBT and diode
3
IKD03N60RF
4
IKD04N60RF
IKD04N60R IKP04N60T
6
IKD06N60RF
IKD06N60R
IKD06N65ET6 *
IKB06N60T IKP06N60T IKA06N60T
8
IKD08N65ET6 *
10
IKD10N60RF
IKD10N60R IKB10N60T IKP10N60T IKA10N60T
15
IKD15N60RF
IKD15N60R IKB15N60T IKP15N60T IKA15N60T
20
IKB20N60T IKP20N60T IKW20N60T
30
IKW30N60T
IKW30N60DTP
40
IKW40N60DTP
50
IKFW50N60ET IKW50N60T
IKW50N60DTP
75
IKFW75N60ET IKW75N60T
100
IKQ100N60T
120
IKQ120N60T
Discrete IGBTs product portfolio
www.infineon.com/600V-1200V-trenchstop
*For more information on the product, contact our product support
193
For more details on the product,
click on the part number.
TRENCHSTOP™ IGBT6
1200 V fast speed IGBT product family together with isolated gate driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-247 TO-247PLUS
3-pin
TO-247PLUS
4-pin
DuoPack
15
IKW15N120BH6
40
IKW40N120CS6 IKY40N120CS6
75
IKQ75N120CS6 IKY75N120CS6
NEW!
TRENCHSTOP™
1200 V product family together with isolated driver and 1200 V level shi driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-247 TO-247PLUS 3-pin
TRENCHSTOP™ TRENCHSTOP™ 2 TRENCHSTOP™ 2
Single IGBT
8
IGW08T120
15
IGW15T120
25
IGW25T120
40
IGW40T120
60
IGW60T120
DuoPack
8
IKW08T120
15
IKW15T120 IKW15N120T2
25
IKW25T120 IKW25N120T2
40
IKW40T120 IKW40N120T2 IKQ40N120CT2
50
IKQ50N120CT2
75
IKQ75N120CT2
TRENCHSTOP™ IGBT6
650 V product family together with 650 V SOI gate driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-252
(DPAK)
TO-220
FullPAK
6
IKD06N65ET6 * *
IGD06N65T6 * *
8
IKD08N65ET6 * * IKA08N65ET6 *
10
IGD10N65T6 * * IKA10N65ET6 *
15
IGD15N65T6 * * IKA15N65ET6 *
www.infineon.com/igbt6
* Limited by maximum junction temperature. Applicable for TO-220 standard package.
* *For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
194
For more details on the product,
click on the part number.
Induction cooking series
650 V, 1100 V, 1200 V, 1350 V and 1600 V product families together with isolated driver and low side driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-247
advanced isolation
TO-247 TO-247 6-pin
IPD Protect
650V 1100V 1200V 1350V 1600V
15 IHW15N120E1
20 IHW20N65R5 IEWS20R5135IPB
IHW20N120R5 IHW20N135R5
25 IHW25N120E1
30 IHW30N65R5 IHW30N110R3 IHW30N120R5 IHW30N135R5 IHW30N160R5
40
IHFW40N65R5S *
IHW40N65R5 IHW40N120R5 IHW40N135R5
50 IHW50N65R5
Discrete IGBTs product portfolio
HighSpeed 3
Together with isolated driver, 650 V SOI driver, and low side driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-263
(D
2
PAK)
TO-220 TO-247
advanced isolation
TO-220
FullPAK
TO-247
IGBT
20
IGB20N60H3 IGP20N60H3 IGW20N60H3
30
IGB30N60H3 IGP30N60H3 IGW30N60H3
40
IGW40N60H3
50
IGW50N60H3
60
IGW60N60H3
75
IGW75N60H3
100
IGW100N60H3
DuoPack
20
IKB20N60H3 IKP20N60H3 IKW20N60H3
30
IKW30N60H3
40
IKFW40N60DH3E IKW40N60H3
50
IKFW50N60DH3E
IKFW50N60DH3 IKW50N60H3
60
IKFW60N60DH3E
IKFW60N60EH3 IKW60N60H3
75
IKW75N60H3
90
IKFW90N60EH3
HighSpeed 3
1200 V product family together with isolated driver, and 1200 V level shi driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-247 TO-247PLUS
3-pin
TO-247PLUS
4-pin
IGBT
15
IGW15N120H3
25
IGW25N120H3
40
IGW40N120H3
DuoPack
15
IKW15N120H3
25
IKW25N120H3
40
IKW40N120H3 IKQ40N120CH3 IKY40N120CH3
50
IKQ50N120CH3 IKY50N120CH3
75
IKQ75N120CH3 IKY75N120CH3
www.infineon.com/rch5
www.infineon.com/rc-e
www.infineon.com/advanced-isolation
*For more information on the product, contact our product support
195
For more details on the product,
click on the part number.
TRENCHSTOP™ 5 F5, H5 and S5
Together with isolated driver, 650 V SOI driver, and low side driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-263
(D2PAK)
TO-220 TO-247
advanced isolation
TO-220
FullPAK
TO-247 TO-247
4-pin
IGBT
20
IGB20N65S5 IGP20N65F5/IGP20N65H5
30
IGB30N65S5 * IGP30N65F5/IGP30N65H5
40
IGP40N65F5/IGP40N65H5
IGW40N65F5/IGW40N65H5
50
IGB50N60H5 *
IGW50N65F5/IGW50N65H5
IGZ50N65H5
IGB50N60S5 *
75 IGW75N65H5
IGZ75N65H5
100
IGZ100N65H5
DuoPack
8
IKP08N65F5/IKP08N65H5 IKA08N65F5/IKA08N65H5
15
IKB15N65EH5 IKP15N65F5/IKP15N65H5 IKA15N65F5/IKA15N65H5
20
IKB20N65EH5 IKP20N65H5/IKP20N65F5
28
IKP28N65ES5
30
IKB30N65EH5 IKP30N65H5/IKP30N65F5
IKW30N65H5
IKB30N65ES5
39
IKP39N65ES5
40
IKB40N65ES5
IKP40N65F5/IKP40N65H5 IKFW40N65DH5 *
IKW40N65F5/IKW40N65H5
IKB40N65EH5
IKB40N65EF5
50
IKFW50N65ES5*
IKW50N65F5/IKW50N65H5
IKZ50N65EH5
IKFW50N65DH5
IKFW50N65EH5*
IKW50N65EH5
60
IKFW60N65ES5 *
75
IKFW75N65ES5 *
IKW75N65EH5
IKFW75N65EH5 * IKZ75N65EH5
90
IKFW90N65ES5
Discrete IGBTs product portfolio
TRENCHSTOP™ 5 L5 low VCE(sat)
650 V product family together with low side driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
IGBT 30
lGW30N65L5 *
DuoPack
30
IKW30N65EL5
75
IKW75N65EL5 IKZ75N75EL5 *
TRENCHSTOP™ 5 WR5
650 V product family together with low side driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-247
DuoPack
30
IKW30N65WR5
40
IKW40N65WR5
50
IKW50N65WR5
TRENCHSTOP™ 5 S5
Together with isolated driver, 650 V SOI driver, and low side driver family
Continuous
collector current
@ Tc=100°C
[A]
TO-247 TO-247
4-pin
DuoPack
30
IKW30N65ES5
40
IKW40N65ES5
50
IKW50N65ES5
IKZ50N65ES5
75
IKW75N65ES5
IKZ50N65ES5
www.infineon.com/trenchstop5
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
196
For more details on the product,
click on the part number.
IGBT nomenclature
Nomenclature
IGBT (aer 03/2013)
Company
I = Infineon
S
= Formerly Siemens
I K
Device
G
= Single IGBT
H
= Reverse conducting
K
= Duo pack
Package type
A
= TO-220-3 FullPAK
B
= TO-263-3 (D2PAK)
D
= TO-252-3 (DPAK)
P
= TO-220-3
U
= TO-251-3 (IPAK)
W
= TO-247-3
Y
= TO-247PLUS 4-pin
FW
= TO-247-3 advanced isolation
Q
= TO-247PLUS/Super 247 (TO247AA)
Z
= TO-247-4
F5 = Ultra fast IGBT
H5 = High speed IGBT
L5 = Low VCE(sat) IGBT
R5 = Reverse conducting IGBT
E1 = Reverse conducting IGBT
S5 = “Soft” high speed IGBT
T6 = TRENCHSTOP™ IGBT6
TP = TRENCHSTOP™ Performance
WR5 = RC TRENCHSTOP™ 5
S6 = 1200 V TRENCHSTOP™ IGBT6
H6 = 1200 V TRENCHSTOP™ IGBT6 fast
Diode (for duo pack only)
B = Emitter controlled half rated
C = Emitter controlled full rated
D = Rapid 1 half rated
E = Rapid 1 full rated
N = Rapid 2 full rated
W = Full rated hard switching
W 75 N65L5E
Nominal
current
[A] @ 100°C
Nominal voltage
Divided by 10 (650 V/10 = 65)
Technology
N
= N-channel
P
= P-channel
www.infineon.com/igbtdiscretes
197
For more details on the product,
click on the part number.
IGBT (before 03/2013)
Company
I = Infineon
S
= Formerly Siemens
I K
Device
K
= IGBT + diode (normal drives)
H
= Optimized for so
switching applications
(e.g. induction heating)
G
= Single IGBT
D
= Diode
Package type
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
D
= TO-252 (DPAK)
P
= TO-220
U
= TO-251 (IPAK)
W
= TO-247
– = Fast IGBT (~20 kHz)
Hχ = HighSpeed generation
(600 V - 1200 V)
Tχ = TRENCHSTOP™ generation
(600 V IGBT 3) (1200 V IGB
T 4)
Rχ = Reverse conducting
RF = Reverse conducting fast
F = HighSpeed FAST 5
Rχ = Rapid diode generation
W 40 N 120 H3
Generation
Nominal current
(@ 100°C) [A]
Nominal voltage
Divided by 10 (1200 V/10 = 120)
Technology
N = N-channel
T = TRENCHSTOPTM
E = Emitter-controlled diodes
(for diode only)
www.infineon.com/igbtdiscretes
IGBT nomenclature
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
198
For more details on the product,
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IPD protect
I –E 135 IPB20WS R5
Product type
G = Single IGBT
H = Reverse conducting
K = DuoPack
E = Enhanced IGBT
Optimization
R5: RC 5th generation
Diode (for DuoPack only)
Note: not used for RC device = blank
Nominal voltage
Divided by 10 (1350 V/10 = 135)
IC/Co-Pack functionality
IPB = Induction cooking
protection IC version B
General format:
1st: I = Induction cooking
2nd : Added funcionality
(P = protection)
3rd : version
Infineon
Package
W = TO-247 3pin
Z = TO-247 4pin
WS = TO-247 6pin
Nominal current
[A] @ 100°C
Nomenclature
www.infineon.com/igbtdiscretes
IGBT nomenclature
199
For more details on the product,
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Infineon support for discrete IGBTs
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/igbt
www.infineon.com/igbtdiscretes
www.infineon.com/discrete-automotive-igbt
www.infineon.com/latest-discrete-packages
Evaluationboards and simulation models
www.infineon.com/eval-TO-247-4pin
www.infineon.com/igbtdiscrete-simulationmodels
Simulation
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
200
For more details on the product,
click on the part number.
Power management ICs
› XDP™ SMPS controllers
› DC-DC digital multiphase controllers
› PFC controllers
› PWM controllers
› Resonant LLC half-bridge controller ICs
› Integrated power stages
› Switching regulators
› Voltage regulators
› Audio amplifier ICs
› Lighting ICs
› Intelligent power modules (IPMs)
› Motor control ICs
201
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
202
For more details on the product,
click on the part number.
XDP™ SMPS
IDP2308 and IDP2303A – digital multi-mode PFC+LLC combo controller
The IDP2308 and IDP2303A are high performance digital combo controllers with integrated drivers and 600 V depletion cell
designed for boost PFC and half-bridge LLC targeting switched mode power supplies (SMPS) from 75 W to 300 W.
› Support non-AUX operation with the lowest standby performance and start-up cell
› Support multi-mode PFC operation for optimized eiciency curve
› Configurable frequency setting for LLC so-start and normal operation
› Synchronous PFC and LLC burst mode control with so-start to prevent acoustic noise
› Excellent dynamic response by adaptive LLC burst mode
› Configurable and comprehensive protections for PFC/LLC/IC temp
› IEC62368-1 certified active X-cap discharge function
› Flexible IC parameter setting with digital UART interface supports
PSU platform approach
Key benefits
› Low BOM count due to high integration of digital control
› No auxiliary power supply needed
› Easy design of system schematic and PCB layout
› Small form factor design
› Higher system reliability
› Shorter development cycles and higher design and production flexibility
www.infineon.com/xdp-smps
IDP2303A – power adapter
GDO
ZCD
CSO
VS
V
AC
HV
HBFB
GND
VCC
CS1
GD1HSGNDHSVCCHSGD
IDP2303A
V
UART
SR IC
Vout
Product Target application Major dierence Package
IDP2308 TV embedded PSU 2nd redundant PFC output
overvoltage protection
DSO-14 (with enhanced HV creepage distance)
IDP2303A Adapter, general SMPS Constant output voltage DSO-16
XDP™ SMPS controllers
203
For more details on the product,
click on the part number.
www.infineon.com/xdp-smps
GDO
ZCD
CSO
VS
V
AC
HV
HBFB
GND
VCC
CS1
GD1HSGNDHSVCCHSGD
IDP2308
UART
Vout_1
Vout_2
P
ower_on/
standby
Vbulk
Target applications
› LCD TV power supply
› General SMPS
› Power adapter
IDP2308 – embedded PSU
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
204
For more details on the product,
click on the part number.
XDP™ SMPS
XDPS21071 – digital FFR flyback controller
XDPS21071 is the first flyback controller in the industry to introduce ZVS (Zero Voltage Switching) on the primary side to
achieve high eiciency with simplified circuitry and economical switches. By driving an external low voltage switch to induce
a negative current to discharge the main high voltage MOSFET, switching losses can be reduce further than traditional valley
switching type of switching scheme. To achieve high eiciency with synchronous rectification, DCM operation is ensured via
valley detection for a safe and robust operation.
45W USB-PD Type-C reference design in a small form factor based on XDPS21071.
› 45W USB-PD Type-C charger
› Universal input range 90~264 VAC
› Supported output: 5 V/3 A, 9 V/3 A, 12 V/3 A, 15 V/3 A and 20 V/2.25 A
› Peak eiciency > 90%
› Low no-load standby input power < 30 mW
Ordering code: REFXDPS2107145W1TOBO1
REF_XDPS21071_45W1
www.infineon/xdps21071
Features and benefits
Key benefits
Reduce switching loss and achieve high eiciency
Optimize eiciency across various line/load condition
Optimize light and no load eiciency
Save BOM count and cost with no messy external driver
Easy to drive, low cost and widely available o the shelf 60V MOSFET
Fail safe mechanism to limit output power in the event of PD controller failure
Avoid CCM operation and no potential of shoot-through with SR MOSFET
Key features
Zero voltage switching
Frequency law optimization
Active burst mode operation with multi entry/exit threshold
Integrated dual MOSFET gate driver
Easy ZVS implementation with an external 60V MOSFET
Multiple peak current threshold oset for dierent output
CrCM operation with valley detection
IPD70R360P7S
BSL606SN
XDPS21071
BSC0805LS
L
F1
LCM RxCx
DB
RHV CBUS
CFV CVCC
CZC RZC2
RZC1
RG1
RCS
QM
U2
U3
RB1 RF1
RF2
RC2
CC3
CC1
CC2
RC1
RB2
CY
RG0
RFC
CFC
CFM
DVCC
RCP2
RCP1
CCP
DCP
WP
WAUX
WZVS
QZVS
60 V,
WS
QSR
CFS
Qload
Cout
U1
VCCZCD
GD1
GD0
CS
MFIO
GND
GPIO
HV
N
85 ... 264
VAC
ISZ0901NLS
SR + protocol control
T
ype-C
XDP™ SMPS controllers
205
For more details on the product,
click on the part number.
DC-DC digital multiphase controllers
Point-of-load power management
Infineon’s digital multiphase and multirail controllers provide power for today’s medium and high current POL
applications used in telecom/datacom, server, and storage environments. Infineon’s digital controller family enables
OEMs and ODMs to improve eiciency and total cost of ownership, while increasing power density and optimizing the
total system footprint of the voltage regulator. The products highlighted in the table below represent our fih generation
digital controller family and support up to two rails with 1-6 phases on individual rails. The I2C/PMBus™ interface
connects the digital controllers to the application system and provides real time telemetry information, monitoring and
control capabilities. The digital controllers are fully configurable through our PowerCode™ and PowerClient™ graphical
user interfaces that allows for easy to use and simplified design optimization.
Multi-phase configurations are supported for best power optimization
Advantages of a digital controller
Protection features include a set of sophisticated overvoltage, undervoltage, overtemperature, and overcurrent protections.
Each of the controllers in the table above also detect and protect against an open circuit on the remote sensing inputs.
These attributes provide a complete and advanced protection feature set for microprocessor, DSP, FPGA or ASIC power sys-
tems. Accurate current sense telemetry is achieved through internal calibration that measures and corrects current sense
oset error sources upon start-up. Programmable temperature compensation provides accurate current sense information
even when using DCR current sense.
Feature Controller family
Configurable output rails Dual rail Dual rail Dual/single rail Dual/single rail Dual rail Dual/single rail Dual/single rail Dual rail
Part number PMBus™
PXE1610C * IR35212 XDPE10280B * XDPE10281B * IR35204MTRPBF IR35201MTRPBF IR35223 * XDPE132G5C *
Phase
configuration
Main 7 ph 7 ph 8 ph 8 ph 4 ph 8 ph 10 ph 16 ph
Subconfigurations 6 + 1 6+1 8+0, 6+2, 4+4 8+0, 6+2, 4+4 3+1 8+0, 7+1, 6+2 10+0, 5+5 8+8
Vout_max 2.5 V 3.3 V 3.04 V 3.04 V 3.3 V 3.3 V 3.3 V 3.3 V
Switching frequency Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz
Operating temperature range - 5°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 120°C
VQFN package 48-lead
(6x6)
0.4 mm pitch
48-lead
(6x6)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
40-lead
(5x5)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
48-lead
(6x6)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
Typical application Intel server,
high end
desktop
Intel server,
workstation,
high end
desktop
Intel server,
workstation,
high end
desktop
AMD server,
workstation,
high end
desktop
AMD server,
memory and
SOC
AMD server,
CPU
Phase
redundant
based server
systems
AMD server,
GPU, ASIC,
networking
ASSP
www.infineon.com/digital-controller
*For more information on the product, contact our product support
Digital multiphase controllers
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
206
For more details on the product,
click on the part number.
Typical multiphase application circuit
CVIN1
Cboost1
L1
12 V
CVCC1
VGD
CVIN2
Cboost2
L2
12 V
CVIN3
L3
12 V
CVIN4
L4
12 V
V_CPU_L2
LOAD
CCS
RS2
1uF
3.3 V
10nF
1K
13K
12V
10nF
13K
13K
1uF
VIN_1 RVIN1_1
Rseries
RVIN1_2
10nF
1K
13K
12V
VIN_2 RVIN2_1
RVIN2_2
I2C Bus
If pin is configured
for SM_ALERT
VV
CPU Serial
Bus
3.3V
1K
VV
From
System
V
V
Bus
CCS
RS2
Rseries
V_CPU_L1
LOAD
CVIN_L2
L4
12 V
10nF
1K
PWM
REFIN
ZCD_EN#
BOOST
SW
PGND
GATEL
TDA21472
LGND
CVDRV1
CVCC2
VGD
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV2
Cboost3
CVCC3
VGD
TDA21472
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV3
Cboost4
CVCC4
VGD
CVDRV4
Cboost5
CVCC5
VGD
TDA21472
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV5
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
RCSP
RCSM
VCC
VSEN
VRTN
TSEN
CFILT
VINSEN
SM_ALERT#/
VINSEN2/PSI#1
SV_ALERT#
SV_DIO
SV_CLK
VRHOT_ICRIT#
EN
EN_L2/INMODE/
CAT_FLT
SV_ADDR
SM_DIO
SM_CLK
RCSP_L2
RCSM_L2
VSEN_L2
VRTN_L2
GND
PWM1
ISEN1
IRTN1
PWM2
ISEN2
IRTN2
PWM3
ISEN3
IRTN3
PWM4
ISEN4
IRTN4
PWM1_L2
ISEN1_L2
IRTN1_L2
VRDY1
VRDY2
ADDR_PROT
IR3584
I2C
TDA21472
TDA21472
IOUT
VDRV
VIN
TOUT /FLT
IOUT
VDRV
VIN
TOUT /FLT
IOUT
VDRV
VIN
TOUT /FLT
REFIN
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
VCC
VCC
VCC
VCC
VCC
Digital multiphase controllers
207
For more details on the product,
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AC-DC power management ICs
Technology leadership in power supply
AC-DC power management ICs
PFC controller
Continuous conduction mode
(CCM) PFC
Critical conduction mode
(CrCM) PFC Combi (PFC+PWM)
Stand-alone PWM
Fixed frequency (FF) CoolSET™
PWM controller
Quasi-resonant (QR) CoolSET™
www.infineon.com/acdc
By oering a wide variety of highly eicient control ICs we enable our customer to meet new demands like PFC regulations
and ultra low standby power requirements in a very cost eective way. A comprehensive array of safety features helps to
minimize the number of external components, reduces design in time and improves the reliability of the SMPS.
AC-DC power management ICs
*For more information on the product, contact our product support
Fixed frequency
ICE5GSAG (125 kHz)
ICE5ASAG (100 kHz)
ICE3AS03LJG (100 kHz)
ICE3BS03LJG (65 kHz)
XDPS21071 (140 kHz)
Quasi-resonant
ICE5QSBG*
ICE2QS02G
ICE2QS03G
Half-bridge LLC resonant
ICE1HS01G-1
ICE2HS01G
650 V F3/F3R CoolSET™
ICE3Axx65ELJ
ICE3RBRxx65JZ
ICE3RBRxx65JG
700 V Gen5 CoolSET™
ICE5AR4770AG
ICE5AR4770BZS
800 V F3R CoolSET™
ICE5A/GRxx80AG
ICE5ARxx80BZS
ICE3A/BRxx80JZ
ICE3ARxx80CJZ
ICE3ARxx80VJZ
ICE3ARxx80JG
Fixed frequency
ICE2PCS02G (65 kHz)
ICE2PCS03G* (100 kHz)
Adjustable frequency
ICE2PCS01G (50 - 250 kHz)
ICE2PCS05G (20 - 250 kHz)
ICE3PCS01G (OVP+brown-out)
ICE3PCS02G (OVP)
ICE3PCS03G (Brown-out)
TDA4862G
TDA4863G
TDA4863-2G
IRS2505L
CrCM + LLC
XDP™ SMPS IDP2308 (DSO-14)
XDP™ SMPS IDP2303A (DSO-16)
650 V CoolSET™
ICE2QRxx65(Z)/(G)
700 V CoolSET™
ICE5QRxx70AZ/G
800 V CoolSET™
ICE2QRxx80Z/G
ICE5QRxx80AZ/G
ICE5QRxx80BG
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
208
For more details on the product,
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ICE2PCS0xG
ICE3PCS0xG
Continuous conduction mode (CCM) PFC ICs
High eiciency and very low system cost
2nd generation continuous conduction
mode PFC IC features
› Fulfills class D requirements of IEC 61000-3-2
› Lowest count of external components
› Adjustable and fixed switching frequencies
› Frequency range from 20 to 250 kHz
› Versions with brown-out protection available
› Wide input range supported
› Enhanced dynamic response during load jumps
› Cycle by cycle peak current limiting
› Integrated protections OVP, OCP
› DIP-8 and DSO-8
› Lead-free, RoHS compliant
3rd generation continuous conduction
mode PFC IC features
› Fulfills class D requirements of IEC 61000-3-2
› Integrated digital voltage loop compensation
› Boost follower function
› Bulk voltage monitoring signals, brown-out
› Multi protections such as double OVP
› Fast output dynamic response during load jump
› External synchronization
› Extra-low peak current limitation threshold
› SO-8 and SO-14
› Lead-free, RoHS compliant
Compared to the first generation of ICE1PCS01/02, the second generation of CCM PFC controller ICs, ICE2PCS01/02,
have lower internal reference trimmed at 3V. They also have other advantages such as wider VCC operating range,
improved internal oscillator and additional direct bulk capacitor overvoltage protection. Compared to the first and
second generation of ICE1PCS0x and ICE2PCS0x, the third generation CCM PFC have the lowest internal reference
trimmed at 2.5 V and integrated digital control voltage loop. They also feature low peak current limit at 0.2 V,
adjustable gate switching frequency range from 21 kHz to 100 kHz and able to synchronize with external frequency
range from 50 kHz to 100 kHz. They are now able to achieve 95% eiciency at full load for all input voltage range.
Application diagram
www.infineon.com/acdc
PFC CCM IC by feature ICE2PCS01G
ICE2PCS05G
ICE2PCS02G
ICE2PCS03G *
ICE3PCS03G ICE3PCS02G ICE3PCS01G
Digital control voltage loop – ✓ ✓ ✓
Variable frequency ✓ – ✓ ✓ ✓
Synchronous frequency – ✓ ✓ ✓
Open loop protection ✓ ✓ ✓ ✓ ✓
Low peak current limit -1 V -1 V -0.4 V -0.4 V -0.2 V
Brown-out protection – ✓ ✓ – ✓
Overvoltage protection ✓ ✓ ✓ ✓ ✓
Second overvoltage protection – ✓ ✓
PFC enable function – ✓
Boost follower mode – ✓
5 V regulator – ✓
PFC controllers
*For more information on the product, contact our product support
209
For more details on the product,
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Critical conduction mode (CrCM) PFC
Easy design and lowest system cost
Application diagram
Fully compatible with the world standard, these devices are optimized to oer extremely compact and cost eective
PFC solutions for electronic ballast and o-line SMPS. By using a zero current detector for discontinuous operation
mode a near unity power factor and an excellent THD are achieved. The latest addition are the TDA4863G and
TDA4863-2G which are the improved versions of the active power factor controller TDA4862G. Products are available in
DSO-8 (TDAxxG parts) and SOT23 (IRS2505L) packages.
www.infineon.com/acdc
TDA4862G
Power factor controller (PFC) IC for high-power factor
and active harmonic filter
› IC for sinusoidal line current consumption
› Power factor approaching 1
› Controls boost converter as an active
harmonics filter
› Internal start-up with low current consumption
› Zero current detector for discontinuous
operation mode
› High current totem pole gate driver
› Trimmed ±1.4% internal reference
› Undervoltage lockout with hysteresis
› Very low start-up current consumption
› Pin compatible with world standard
› Output overvoltage protection
› Current sense input with internal low pass filter
› Totem pole output with active shutdown
during UVLO
› Junction temperature range -40°C to +150°C
› Available in DIP-8 and SO-8 packages
TDA4863G/TDA4863-2G
Power factor controller IC for high-power
factor and low THD additional features to TDA4862
› Reduced tolerance of signal levels
› Improved light load behavior
› Open loop protection
› Current sense input with leading edge blanking LEB
› Undervoltage protection
› SO-8 package
IRS2505LPBF
› Crticial conduction mode PFC control
› High power factor and ultralow THD
› Wide load and line range
› Regulated and programmable DC bus voltage
› No secondary winding required
› MOSFET cycle-by-cycle overcurrent protection
› DC bus overvoltage protection
› Low EMI gate drive
› Ultralow start-up current
› 20.8 V internal Zener clamp on VCC
› Excellent ESD and latch immunity
› RoHS compliant
› 5-pin SOT-23 package
TDA4862G
TDA4863G
TDA4863-2G
IRS2505LPBF
PFC controllers
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
210
For more details on the product,
click on the part number.
PFC controller portfolio
Critical conduction mode (CrCM) PFC IC portfolio
Continuous conduction mode PFC ICs
www.infineon.com/acdc
Product Frequency – fSW Current drives Package
ICE2PCS01G 50-250 kHz 2.0 A DSO-8
ICE2PCS02G 65 kHz 2.0 A
ICE2PCS03G* 100 kHz 2.0 A
ICE2PCS05G 20-250 kHz 2.0 A
Product VCC min. VCC max. Package
TDA4862G 11 V 19 V DSO-8
TDA4863G 10 V 20 V DSO-8
TDA4863-2G 10 V 20 V DSO-8
IRS2505L 9 V 20.8 V SOT23
2nd generation continuous conduction mode PFC IC product portfolio
3rd generation continuous conduction mode PFC IC product portfolio
Product Frequency – fSW Current drives Features Package
ICE3PCS01G Adjustable 0.75 A OVP+brown-out SO-14
ICE3PCS02G 0.75 A OVP SO-8
ICE3PCS03G 0.75 A Brown-out SO-8
www.infineon.com/acdc
PFC controllers
*For more information on the product, contact our product support
211
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
212
For more details on the product,
click on the part number.
5th generation fixed frequency CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
15 W 23 W 27 W 40 W
RDS(on) max 5.18  2.35  1.75  0.80 
700 V DIP-7 ICE5AR4770BZS
DSO-12 ICE5AR4770AG
800 V DIP-7 ICE5AR4780BZS ICE5AR0680BZS
DSO-12 ICE5GR4780AG ICE5GR2280AG ICE5GR1680AG ICE5AR0680AG
3rd generation fixed frequency CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
10~15 W 19~21 W 23~26 W 30~34 W 37~41 W
RDS(on) max 11.1~5.44  3.42~2.62  1.96~1.71  1.11~1.05  0.75~0.71 
650 V
DIP-7 ICE3RBR4765JZ ICE3RBR1765JZ ICE3RBR0665JZ
DIP-8 ICE3BR4765J ICE3A1065ELJ ICE3BR1765J ICE3A2065ELJ ICE3BR0665J
DSO-12 ICE3RBR4765JG ICE3RBR1765JG ICE3RBR0665JG
800 V DIP-7
ICE3AR4780JZ ICE3AR2280JZ ICE3AR1580VJZ ICE3AR1080VJZ ICE3AR0680JZ
ICE3AR4780VJZ ICE3BR2280JZ ICE3BR0680JZ
ICE3AR4780CJZ ICE3AR2280VJZ ICE3AR0680VJZ
ICE3AR10080CJZ ICE3AR2280CJZ
DSO-12 ICE3AR4780JG ICE3AR2280JG ICE3AR1080JG
1) Calculated DCM maximum output power in an open-frame design
based on Ta=50° C and Tj=125°C without copper area as heatsink
5th generation fixed frequency PWM IC and CoolSET™
› Integrated CoolMOS™ in both 700 V
and 800 V MOSFET
› Cascode configuration for brown-in
protection, fast and robust start-up
› Available in both 100 kHz and 125
kHz fixed switching frequency
› Frequency reduction in tandem
with load reduction to increase
eiciency
› Selectable active burst mode entry/
exit profile to optimize standby
power and ability to disable
› Support CCM flyback operation
with in-build slope compensation
› Integrated error amplifier for direct
feedback (e.g. non-isolated flyback)
› Adjustable line input overvoltage
protection (only ICE5xRxxxxAG)
› VCC pin short-to-ground protection
› Auto restart protection mode to
minimize interruption to operation
› DSO-8 package (standalone
controller), DIP-7 and DSO-12
package for CoolSET™
FF CoolSETTM
www.infineon.com/coolset
PWM controllers
213
For more details on the product,
click on the part number.
www.infineon.com/coolset
5th generation 3rd generation
FF PWM IC ICE5ASAG ICE5GSAG ICE3AS03LJG ICE3BS03LJG
Package DSO–8 DSO–8
Switching frequency 100 kHz 125 kHz 100 kHz 65 kHz
Operating temperature -40°C~129°C -25°C~130°C
Start-up cell Cascode ✓
VCC on/o threshold 16 V/10 V 18 V/10.5 V
So start time 12 ms 10 ms 20 ms
Frequency jittering ✓ ✓
Modulated gate drive ✓ ✓
Active burst mode ✓ (3 level selectable) ✓
Slope compensation for CCM ✓ –
Frequency reduction ✓ –
Integrated error amplifier for direct feedback ✓ –
Adjustable line Input overvoltage protection ✓ with auto restart –
Adjustable brown-in protection ✓ with auto restart –
VCC pin short-to-ground protection ✓ (no start–up) –
VCC undervoltage protection ✓ with auto restart ✓ with auto restart
VCC overvoltage protection ✓ with auto restart ✓ with latch–up
Overload /open loop protection ✓ with auto restart ✓ with auto restart
Overtemperature protection ✓ with auto restart and hysteresis ✓ with latch–up
External blanking time extension – ✓ with auto restart
External protection enable pin – ✓ with latch–up
Fixed frequency PWM IC
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
214
For more details on the product,
click on the part number.
Fixed frequency CoolSET™
1) Calculated 85 VAC~300 VAC DCM maximum output power in an open-frame design based on
Ta=50°C and Tj=125°C without copper area as heatsink
700 V CoolSET™ 650V CoolSET™ 800V CoolSET™
Gen5
ICE5ARxx70AG(BZS)
Gen3
ICE3Axx65ELJ
Gen3R
ICE3BRxx65J
Gen3R
ICE3RBRxx65JZ(G)
Gen3R
ICE3A(B)Rxx80JZ
Gen3R
ICE3ARxx80CJZ
Gen3R
ICE3ARxx80JG
Gen3R
ICE3ARxx80VJZ
Gen5
ICE5ARxx80AG(BZS)
Gen5
ICE5GRxx80AG
Package DIP-7, DSO-12 DIP-8 DIP-7, DSO-12 DIP–7 DSO–12 DIP–7 DIP–7, DSO–12 DSO–12
Output power range 15 W 19 W~34 W 15 W~41 W 14 W~39 W 10 W~40 W 11 W~23 W 14 W~30 W 15 W~39 W 15 W~40 W 15 W~27 W
Operating temperature range -40°C~129°C -25°C~130°C -40°C~130°C –25°C~130°C –40°C~130°C –40°C~129°C
Switching frequency 100 kHz 100 kHz 65 kHz 65 kHz 100 kHz/65 kHz 100 kHz 100 kHz 100 kHz 125 kHz
Frequency reduction ✓ – – ✓
Integrated error amplifier ✓ – – ✓
Slope compensation for CCM mode ✓ – – ✓ – ✓
VCC on/o threshold 16 V/10 V 18 V/10.5 V 17 V/10.5 V 16 V/10 V
So start time 12 ms 20 ms 10 ms 12 ms
Active burst mode selection 3 level 1 level 4 level 3 level 4 level 3 level
VCC pin short-to-ground protection No start-up – – No start–up
VCC overvoltage protection Auto restart Latch Auto restart Auto restart
Overtemperature protection Auto restart with hysteresis Latch Auto restart Auto restart with hysteresis
External protection enable pin -Latch Auto restart Auto restart Latch Auto restart –
Adjustable brown-in/-out protection Brown-in only – Auto restart – Brown-in only
Adjustable line input overvoltage
protection
Only ICE5ARxx70AG – – Auto restart Only ICE5ARxx80AG Auto restart
Fast AC reset –– ✓ –
Product available
ICE5AR4770AG
ICE5AR4770BZS
ICE3A1065ELJ
ICE3A2065ELJ
ICE3BR4765J
ICE3BR1765J
ICE3BR0665J
ICE3RBR4765JZ
ICE3RBR1765JZ
ICE3RBR0665JZ
ICE3RBR4765JG
ICE3RBR1765JG
ICE3RBR0665JG
ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
ICE3AR0680JZ
ICE3BR2280JZ
ICE3BR0680JZ
ICE3AR10080CJZ
ICE3AR4780CJZ
ICE3AR2280CJZ
ICE3AR4780JG
ICE3AR2280JG
ICE3AR1080JG
ICE3AR4780VJZ
ICE3AR2280VJZ
ICE3AR1580VJZ
ICE3AR1080VJZ
ICE3AR0680VJZ
ICE5AR0680AG
ICE5AR4780BZS
ICE5AR0680BZS
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
www.infineon.com/coolset
PWM controllers
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For more details on the product,
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700 V CoolSET™ 650V CoolSET™ 800V CoolSET™
Gen5
ICE5ARxx70AG(BZS)
Gen3
ICE3Axx65ELJ
Gen3R
ICE3BRxx65J
Gen3R
ICE3RBRxx65JZ(G)
Gen3R
ICE3A(B)Rxx80JZ
Gen3R
ICE3ARxx80CJZ
Gen3R
ICE3ARxx80JG
Gen3R
ICE3ARxx80VJZ
Gen5
ICE5ARxx80AG(BZS)
Gen5
ICE5GRxx80AG
Package DIP-7, DSO-12 DIP-8 DIP-7, DSO-12 DIP–7 DSO–12 DIP–7 DIP–7, DSO–12 DSO–12
Output power range 15 W 19 W~34 W 15 W~41 W 14 W~39 W 10 W~40 W 11 W~23 W 14 W~30 W 15 W~39 W 15 W~40 W 15 W~27 W
Operating temperature range -40°C~129°C -25°C~130°C -40°C~130°C –25°C~130°C –40°C~130°C –40°C~129°C
Switching frequency 100 kHz 100 kHz 65 kHz 65 kHz 100 kHz/65 kHz 100 kHz 100 kHz 100 kHz 125 kHz
Frequency reduction ✓ – – ✓
Integrated error amplifier ✓ – – ✓
Slope compensation for CCM mode ✓ – – ✓ – ✓
VCC on/o threshold 16 V/10 V 18 V/10.5 V 17 V/10.5 V 16 V/10 V
So start time 12 ms 20 ms 10 ms 12 ms
Active burst mode selection 3 level 1 level 4 level 3 level 4 level 3 level
VCC pin short-to-ground protection No start-up – – No start–up
VCC overvoltage protection Auto restart Latch Auto restart Auto restart
Overtemperature protection Auto restart with hysteresis Latch Auto restart Auto restart with hysteresis
External protection enable pin -Latch Auto restart Auto restart Latch Auto restart –
Adjustable brown-in/-out protection Brown-in only – Auto restart – Brown-in only
Adjustable line input overvoltage
protection
Only ICE5ARxx70AG – – Auto restart Only ICE5ARxx80AG Auto restart
Fast AC reset –– ✓ –
Product available
ICE5AR4770AG
ICE5AR4770BZS
ICE3A1065ELJ
ICE3A2065ELJ
ICE3BR4765J
ICE3BR1765J
ICE3BR0665J
ICE3RBR4765JZ
ICE3RBR1765JZ
ICE3RBR0665JZ
ICE3RBR4765JG
ICE3RBR1765JG
ICE3RBR0665JG
ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
ICE3AR0680JZ
ICE3BR2280JZ
ICE3BR0680JZ
ICE3AR10080CJZ
ICE3AR4780CJZ
ICE3AR2280CJZ
ICE3AR4780JG
ICE3AR2280JG
ICE3AR1080JG
ICE3AR4780VJZ
ICE3AR2280VJZ
ICE3AR1580VJZ
ICE3AR1080VJZ
ICE3AR0680VJZ
ICE5AR0680AG
ICE5AR4780BZS
ICE5AR0680BZS
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
216
For more details on the product,
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Climate saver 80 PLUS® and 80 PLUS® Bronze
Climate saver systems
Climate saver 80 PLUS® Silver
FF CoolSETTM
5 V
PFC
DC-DC
12 V
5 V
3.3
V
DC-DC
PWM
FF CoolSET
TM
PFC/PWM
12 V
5 V
3.3 V
5 V
PFC block
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
PWM block ICE2HS01G
Standby block
FF CoolSET™
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG
ICE5AR0680AG
PFC block
ICE2PCS01G
ICE2PCS02G
PWM block ICE1HS01G-1
Standby block
FF CoolSET™
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG
ICE5AR0680AG
80 PLUS® Silver
80 PLUS® and 80 PLUS® Bronze
www.infineon.com/pcpower
www.infineon.com/acdc
www.infineon.com/coolset
Climate saver systems
217
For more details on the product,
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www.infineon.com/pcpower
www.infineon.com/acdc
www.infineon.com/coolset
FF CoolSETTM
DC-DC
PFC PWM
DC-DC
5 V
3.3
V
12 V
5 V
Climate saver 80 PLUS® Gold Climate saver 80 PLUS® Platinum
Certification for Infineon's PC power reference design
PFC block
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
PWM block ICE2HS01G
Standby block
FF CoolSET™
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG
ICE5AR0680AG
PFC block
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
PWM block ICE2HS01G
Standby block
QR CoolSET™
ICE5QR4780BG *
ICE5QR2280BG *
ICE5QR1680BG *
ICE2QR1080G
ICE5QR0680BG *
80 PLUS® Gold
80 PLUS® Platinum
Certification for Infineon's PC power reference design
Climate saver systems
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
218
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5th generation quasi-resonant PWM IC
and CoolSET™
› Integrated CoolMOS™ in both 700 V
and 800 V MOSFET with cascode
configuration
› Digital frequency reduction with
reducing load
› Novel quasi-resonant to minimize
the spread of switching frequency
between low and high line AC input
› Selectable active burst mode
entry/exit profile
› Auto restart mode for line
overvoltage protection
› Auto restart mode for brown-out
protection
› Auto restart mode for VCC under-/
overvoltage protection
› Auto restart mode for open-loop
and output overload protection
› Auto restart mode for
overtemperature protection
with hysteresis
› Auto restart mode for output
overvoltage
› Limited charging current during VCC
pin short-to-ground protection
› Peak power limitation with input
voltage compensation
› Minimum switching frequency
limitation (no audible noise on
power units on/o)
› DSO package (controller) and
DIP-7/DSO-12 (CoolSET™ )
5th generation quasi-resonant CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
15 W 22 W 27 W 32 W 41 W~42 W
RDS(on) max 5.18  2.35  1.75  1.25  0.80 
700 V DIP-7 ICE5QR4770AZ ICE5QR2270AZ ICE5QR1070AZ
DSO-12 ICE5QR4770AG
800 V
DIP-7 ICE5QR4780AZ ICE5QR2280AZ ICE5QR0680AZ
DSO-12 ICE5QR4780BG * ICE5QR2280BG * ICE5QR1680AG
ICE5QR1680BG *
ICE5QR0680AG
ICE5QR0680BG *
2nd generation quasi-resonant CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
14 W~15 W 20 W~21 W 23 W~26 W 31 W 38 W~42 W
RDS(on) max 5.44  ~ 5.18  2.62  1.96  1.11  0.75 ~0.71 
650 V
DIP-7 ICE2QR4765Z ICE2QR1765Z ICE2QR0665Z
DIP-8 ICE2QR4765 ICE2QR1765 ICE2QR0665
DSO-12 ICE2QR4765G ICE2QR1765G ICE2QR0665G
800 V
DIP-7 ICE2QR2280Z ICE2QR0680Z
DSO-12 ICE2QR4780G ICE2QR2280G
ICE2QR2280G-1
ICE2QR1080G
1) Calculated maximum output power in an open frame design at Ta=50°C, Tj=125°C and without copper area as heat sink
*For more information on the product, contact our product support
QR CoolSETTM
zero crossing
detector
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PWM controllers
219
For more details on the product,
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PWM controllers
Feature ICE5QSAG and ICE5QSBG ICE2QS02G ICE2QS03G
Package DSO-8 DSO-8 DSO-8
Switching scheme Novel QR with 10 zero crossing
counters
QR with 7 zero crossing counters QR with 7 zero crossing counters
Operating temperature -40°C~129°C -25°C~130°C -25°C~130°C
Startup cell Cascode – ✓
VCC on/o 16 V/10 V 12 V/11 V 18 V/10.5 V
Power saving during standby ✓ active burst mode in QR switching
2-level selectable burst mode
entry/exit level
– ✓ active burst mode 52 kHz
Digital frequency reduction for high
average eiciency
✓✓✓
OLP blanking time Fixed Adjustable Fixed
Auto restart timer Through VCC charging/discharging Setting with external components Through VCC charging/discharging
Maximum input power limitation Vin pin voltage dependent Adjustable through ZC resistor Adjustable through ZC resistor
VCC undervoltage protection ✓ with auto restart ✓ with latch ✓ with auto restart
Adjustable output overvoltage protection ✓ with auto restart ✓ with latch ✓ with latch
Adjustable line input
overvoltage protection
✓ – –
Brown-out feature ✓ ✓ –
Vcc pin short-to-ground protection ✓ – –
Target application Home appliances, set-top-box, AUX
SMPS
AUX power supply to VCC eg. LCD TV
multi/main, audio main,
PDP TV multi/address
Self-power supply to VCC eg. smart
meter, industrial applications
Quasi-resonant PWM IC
2nd generation
ICE2QRxxxxZ/G
2nd generation
ICE2QRxx80G-1
5th generation
ICE5QRxxxxA/B/Z/G
Switching scheme QR with 7 zero crossing counters Novel QR with 10 zero
crossing counters
Integrated MOSFET 650 V and 800 V 800 V 700 V and 800 V
High voltage start-up cell ✓ Cascode
Power saving during standby Active burst mode fSW @ 52 kHz 2 level selectable active burst
mode quasi-resonant
VCC on/o threshold (typ.) 18 V/10.5 V 18 V/9.85 V 16 V/10 V
Adjustable output overvoltage protection ✓ with latch ✓ with auto restart
VCC over/undervoltage protection ✓ with auto restart ✓ with auto restart
Overload/open loop protection ✓ with auto restart ✓ with auto restart
Overtemperature protection ✓ with auto restart ✓ (Auto restart with hysteresis)
Adjustable line input overvoltage protection – ✓ with auto restart
Brown-out – ✓ with auto restart
VCC pin short to ground – ✓ (No start-up)
Package DIP-7
DIP-8
DSO-12
DIP-7
DSO-12
DIP-7
DSO-12
Quasi-resonant CoolSET™
www.infineon.com/coolset
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
220
For more details on the product,
click on the part number.
www.infineon.com/acdc
Resonant LLC half-bridge controller IC
Best-in-class converters and controllers to support LLC HB resonant mode topology
Resonant mode power supplies are a variation over SMPS circuits where the switching losses are significantly reduced
by adapting zero-voltage or zero-current switching techniques, also known as so-switching technique. In non-resonant
mode SMPS circuits, the switches are subjected to hard switching. LLC HB resonant operates under the ZVS mode,
whereby switching loss is reduced to operate converter at a higher switching frequency. In addition, the converter can
be further optimized at a high input voltage. This topology allows to eliminate the secondary filter inductor, adopt better
rectifier diodes and reduce secondary conduction loss. The converter utilizes leakage and magnetizing inductance of a
transformer. With magnetic integration concept, all the magnetic components can be built in one magnetic core.
› Novel and simple design (12 components + HB driver)
› Minimum operating frequency is adjustable externally
› Burst mode operation for output voltage regulation during
no load and/or bus overvoltage
› Multiple protections in case of fault
› Input voltage sense for brown-out protection
› Open loop/overload fault detection by FB pin with
auto restart and adjustable blanking/restart time
› Frequency shi for overcurrent protection
› Lead-free, RoHS compliant package
› DSO-8 package
Application diagram – LLC resonant (no SR)
ICE1HS01G-1
LLC resonant (no SR)
Resonant LLC half-bridge controller IC with integrated synchronized rectifier control
› Novel LLC/SR operation mode and controlled by primary
side controller
› Multiple protections for SR operation
› Tight tolerance control
› Accurate setting of switching frequency and dead time
› Simple system design
› Optimized system eiciency
› Multiple converter protections: OTP, OLP, OCP, latch-o enable
› External disable for either SR switching or HB switching
› Lead-free, RoHS compliant package
› DSO-20 package
LLC resonant + SR
ICE2HSO1G
HB LLC resonant
221
For more details on the product,
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Product Frequency – fSW Dead time Current drives Package
ICE1HS01G-1 LLC resonant (no SR) 30 kHz~600 kHz 380 ns 1.5 A DSO-8
ICE2HS01G Resonant LLC half-bridge controller IC with
integrated synchronized rectifier control
(LLC resonant + SR)
30 kHz~1 MHz 100~1000 ns 0.3 A DSO-20
www.infineon.com/coolset
* S/R = primary side controlled synchronous rectification
HB LLC resonant
LLC half-bridge controller IC ICE1HS01G-1 ICE2HS01G
Package DSO-8 DSO-20
Switching frequency range up to 600 kHz up to 1 MHz
LLC so start ✓ ✓
LLC burst mode ✓ ✓
Adjustable minimum frequency ✓ ✓
Overload/open loop protection ✓ ✓
Mains undervoltage protection with hysteresis ✓ ✓
Overcurrent protection 2-level 3-level
Drive signal for synchronous rectification – ✓
Adjustable dead time – ✓
External latch-o and OTP – ✓
Target application LCD-TV, audio, etc. Server, PC, LCD-TV, etc.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
222
For more details on the product,
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DC-DC converters
Highest density end-to-end power management solutions
www.infineon.com/power-stages
As the innovation leader for power semiconductor and energy eiciency technologies, we are continually developing
and working on the best solutions for your applications. Our DC-DC converter portfolio includes integrated power
stages, switching regulators, integrated POL converters and integrated POL voltage regulators, as well as digital
multiphase controllers (see page 205)
223
For more details on the product,
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OptiMOS™ Powerstage
60 A and 70 A integrated power stages with integrated current and temperature telemetry
Infineon’s integrated OptiMOS™ Powerstage family contains a synchronous buck gate driver IC which is co-packed with control
and synchronous MOSFETs and a Schottky diode to further improve eiciency. The package is optimized for PCB layout, heat
transfer, driver/MOSFET control timing and minimal switch node ringing when layout guidelines are followed. The paired gate
driver and MOSFET combination enables higher eiciency at lower output voltages required by cutting edge CPU, GPU, ASIC
and DDR memory designs. The TDA21472 integrated power stages internal MOSFET current sense algorithm, with integrated
temperature compensation, achieves superior current sense accuracy versus best-in-class controller based inductor DCR
sense methods. Up to 1.0 MHz switching frequency enables high performance transient response, allowing miniaturization
of output inductors, as well as input and output capacitors, while maintaining industry-leading eiciency. The TDA21472 is
optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the server
market also makes the TDA21472 ideally suited for powering GPU, ASIC, DDR memory, and other high current designs.
Features
› Integrated driver, Schottky diode, control MOSFET and
synchronous MOSFET
› 5 mV/A on-chip MOSFET current sensing with temperature
compensated reporting
› Input voltage (Vin) range of 4.5 to 15 V
› VCC and VDRV supply of 4.5 to 7 V
› Output voltage range from 0.25 up to 5.5 V
› Output current capability of 70 A
› Operation up to 1.0 MHz
› VCC undervoltage lockout (UVLO)
› 8 mV/°C temperature analog output and thermal flag
pull-up to 3.3 V
› Overtemperature protection (OTP)
› Cycle-by-cycle self-preservation overcurrent protection (OCP)
› MOSFET phase fault detection and flag
› Preliminary overvoltage protection (pre-OVP)
› Compatible with 3.3 V tri-state PWM input
› Body-Braking™ load transient support through PWM tri-state
› Diode emulation mode (DEM) for improved light load eiciency
› Eicient dual-sided cooling
› Small 5.0 x 6.0 x 0.9 mm PQFN package
Applications
› High frequency, high current, low profile DC-DC converters
› Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays
Part type Package Iout
[A]
Vin
[V]
Vout
[V]
Switching frequency
[MHz]
TDA21472 5 x 6 x 0.9 mm PQFN 70 4.5 to 15 0.25 to 5.5 1.0
TDA21462 * 5 x 6 x 0.9 mm PQFN 60 4.5 to 15 0.25 to 5.5 1.0
www.infineon.com/integrated-powerstages
*For more information on the product, contact our product support
CVIN1
L1
12V
CVIN2
L2
12V
CVIN6
L6
12V
CVIN1_L2
L_L2
12V
V_CPU_L
2
L
O
A
D
1uF
3.3V
10nF
1K
13K
12V
VCC
VSEN1
VRTN1
TSEN2
CFILT
1uF
VIN_1
RVIN1_1
RVIN1_2
SV_ALERT#
SV_DAT
SV_CLK
CPU Serial
Bus
VR_HOT#
1K
From
System
VR_EN1
VR_EN2
PROG
SM_DAT
SM_CLK
I2C Bus
VSEN_L2
VRTN_L2
GND
L
O
A
D
PWM1
ISEN1
PWM2
ISEN2
PWM6
ISEN6
PWM1_L2
ISEN1_L2
VRDY1
VRDY2
IR35215
VINSEN1
V_CPU_L1
VC
CIO
IINSEN
.
.
.
.
.
.
TSEN1
PWR_IN_ALERT#
SM_ALERT#
Cboot1
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21472
PHASE
VCC
EN
VOS
NC
CVCC1 CVDRV1
LGND
Cboot2
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21472
PHASE
VCC
EN
VOS
NC
CVCC2 CVDRV2
LGND
Cboot6
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21472
PHASE
VCC
EN
VOS
NC
CVCC6CVDRV6
LGND
Cboot1_L2
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21472
PHASE
VCC
EN
VOS
NC
CVCC1_L2 CVDRV1_L2
LGND
Rboot1
Rboot2
Rboot6
Rboot1_L2
Integrated power stages
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
224
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OptiMOS™ Powerstage
70 A power stage with exposed top for improved thermal performance
Infineon’s TDA21475 exposed-top power stage contains a low quiescent-current synchronous buck gate driver IC
co-packaged with high-side and low-side MOSFETs. The package is optimized for PCB layout, heat transfer, driver/MOSFET
control timing, and minimal switch node ringing when layout guidelines are followed. The gate driver and MOSFET
combination enables higher eiciency at the lower output voltages required by cutting edge CPU, GPU and DDR memory
designs. The TDA21475 internal MOSFET current sense algorithm with temperature compensation achieves superior
c
urrent sense accuracy versus best-in-class controller-based inductor DCR sense methods. Protection includes cycle-
by-cycle over current protection with programmable threshold, VCC/VDRV UVLO protection, bootstrap capacitor un-
dervoltage protection, phase fault detection, IC temperature reporting and thermal shutdown. The TDA21475 also
features auto replenishment of the bootstrap capacitor to prevent overdischarge. The TDA21475 features a deep-sleep
power saving mode, which greatly reduces the power consumption when the multiphase system enters PS3/PS4
mode. Operation at switching frequency as high as 1.5 MHz enables high performance transient response, allowing
reduction of output inductance and output capacitance while maintaining industry-leading eiciency. The TDA21475
is optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the
server market also makes the TDA21475 ideally suited for powering GPU and DDR memory designs.
Features
› Co-packaged driver, high-side and low-side MOSFETs
› 5 mV/A on-chip MOSFET current sensing with temperature
compensated reporting Input voltage (VIN) range of 4.25 to 16 V
› VCC and VDRV supply of 4.25 to 5.5 V
› Output voltage range from 0.25 up to 5.5 V output current
capability of 70 A operation up to 1.5 MHz
› VCC/VDRV undervoltage lockout (UVLO) Bootstrap capacitor
undervoltage protection 8 mV/°C temperature analog output
› Thermal shutdown and fault flag
› Cycle-by-cycle over current protection with programmable
threshold and fault flag MOSFET phase fault detection and flag
› Auto replenishment of bootstrap capacitor Deep-sleep
mode for power saving Compatible with 3.3 V tri-state PWM
input Body-Braking™ load transient support Small 5 x 6 x
0.65 mm PQFN package
› Lead-free RoHS compliant package
› Integrated driver, Schottky diode, control MOSFET and
synchronous MOSFET
Applications
› High frequency, high current, low profile DC-DC converters
› Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays
Part type Package Iout
[A]
Vin
[V]
Vout
[V]
Switching frequency
[MHz]
TDA21475 * 5 x 6 x 0.9 mm PQFN 70 4.25 to 16 0.25 to 5.5 1.5
www.infineon.com/integrated-powerstages
CVIN1
L1
12V
CVIN2
L2
12V
CVIN6
L6
12V
CVIN1_L2
L_L2
12V
V_CPU_L
2
L
O
A
D
1uF
3.3V
10nF
1K
13K
12V
VCC
VSEN1
VRTN1
TSEN2
CFILT
1uF
VIN_1
RVIN 1_1
RVIN 1_2
SV_ALERT#
SV_DAT
SV_CLK
CPU Serial
Bus
VR_HOT#
1K
From
System
VR_EN1
VR_EN2
PROG
SM_DAT
SM_CLK
I2C Bus
VSEN_L2
VRTN_L2
GND
L
O
A
D
PWM1
ISEN1
PWM2
ISEN2
PWM6
ISEN6
PWM1_L2
ISEN1_L2
VRDY1
VRDY2
IR35215
VINSEN1
V_CPU_L1
VC
CIO
IINSEN
.
.
.
.
.
.
TSEN1
PWR_IN_ALERT#
SM_ALERT#
Cboot1
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21475
PHASE
VCC
EN
VOS
NC
CVCC1 CVDRV1
LGND
Cboot2
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21475
PHASE
VCC
EN
VOS
NC
CVCC2 CVDRV2
LGND
Cboot6
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21475
PHASE
VCC
EN
VOS
NC
CVCC6 CVDRV6
LGND
Cboot1_L2
+5V
TOUT/FLT
PWM
IOUT
REFIN
OCSET
VDRV
VIN
BOOT
SW
PGND
GATEL
TDA21475
PHASE
VCC
EN
VOS
NC
CVCC1_L2 CVDRV1_L2
LGND
Rboot1
Rboot2
Rboot6
Rboot1_L2
Integrated power stages
*For more information on the product, contact our product support
225
For more details on the product,
click on the part number.
OptiMOS™ Powerstage
20 A power stage with integrated current sense
Infineon’s IR35401 integrated power stage contains a synchronous buck gate driver IC, which is co-packaged with control
and synchronous MOSFETs and Schottky diode to further improve eiciency. The package is optimized for PCB layout, heat
transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired
gatedriver and MOSFET combination enables higher eiciency at lower output voltages required by cutting edge CPU,
GPU and DDR memory designs. The IR35401 power stage features an integrated current sense amplifier to achieve superior
current-sense accuracy against best-in-class controller-based inductor DCR sense methods while delivering the clean and
accurate current report information. The protection features inside IR35401 include VCC UVLO and thermal flag. IR35401
also features an auto replenishment of bootstrap capacitor to prevent the bootstrap capacitor from overdischarging.
The IR35401 supports deep-sleep mode and consumes <100 µA VCC bias current when the EN pin is pulled low. Up to 1.5
MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as
well as input and output capacitors while maintaining industry-leading eiciency. When combined with Infineon’s digital
controllers, the IR35401 incorporates the Body-Braking™ feature through PWM tri-state which enables reduction of output
capacitors. The IR35401 is optimized for low current CPU rails in server applications. The ability to meet the stringent
requirements of the server market also makes the IR35401 ideally suited for powering GPU and DDR memory rails.
Features
› Integrated driver, control MOSFET and synchronous MOSFET
› Integrated bootstrap synchronous PFET
› Inductor DCR current sensing with temperature compensation
› I
nput voltage (VIN) range from 4.25 to 16 V
› VCC supply of 4.25 to 5.5 V
› Output voltage range from 0.5 to 3 V or up to 5.5 V if the
internal current sense amplifier is not used
› Local lossless inductor current sensing with improved noise
immunity and accuracy
› Single reference based current reporting output
› Output current capability of 20 A
› Operation up to 1.5 MHz
› VCC undervoltage lockout
› Over-temperature and VCC UVLO fault communication to
controller via TOUT pin
› Compatible with 3.3 V tri-state PWM Input
› Body-Braking™ load transient support through PWM tri-state
› Auto-replenishment on BOOST pin
› Low operating quiescent current and <100 µA when disabled
› Small 4 x 5 x 0.9 mm PQFN package
› Lead-free RoHS compliant package
Applications
› General purpose POL DC-DC converters
› Voltage regulators for CPUs, GPUs, ASICs, and DDR
memory arrays
Part type Package Iout
[A]
Vin
[V]
Vout
[V]
Switching frequency
[MHz]
IR35401 * 4 x 5 x 0.9 mm PQFN 20 4.25 to 16 0.5 to 5.5 1.5
www.infineon.com/integrated-powerstages
CVIN1
Cboost1
L1
12V
+5V
CVIN3
Cboost3
L3
12V
CVIN1_L2
L1_L2
12V
V_CPU_L
2
L
O
A
D
1uF
3.3V
10nF
1K
13K
12V
VCC
VSEN1
VRTN1
CFILT
1uF
VIN_1
RVIN 1_1
RVIN 1_2
SV_ALERT#
SV_DIO
SV_CLK
CPU Serial
Bus
VRHOT_ICRIT#
1K
VSEN2
VRTN2 GND
L
O
A
D
PWM1
ISEN1
PWM3
ISEN3
PWM1_L2
ISEN1_L2
VRDY1
VRDY2
CVDRV1
+5V
CVDRV3
Cboost1_L2
+5V
CVDRV1_L2
VIN
BOOST
SW
PGND
GATEL
IR35411
LGND
PHASE
VIN
BOOST
SW
PGND
GATEL
IR35411
LGND
PHASE
TOUT/FLT
PWM
IOUT
REFIN
VOS
TOUT/FLT
PWM
IOUT
REFIN
VOS
.
.
.
VINSEN1
V_CPU_L1
VC
CIO
ADDR_PROT
/PROG
h1K
10nF
TSEN1
r
13K
TSEN2
IOUT
VCC
PWM
REFIN
VIN
BOOST
SW
PGND
IR35401
LGND
PHASE
CSIN+
CSIN-
VCC
EN
OCSET
VDRV
VCC
EN
OCSET
VDRV
From
System
VR_EN1
VR_EN2
SM_DAT
SM_CLK
I2C Bus
SM_ALERT
10nF
1K
1K
EN
TOUT/FLT
Rboost1_L2
Rboost3
Rboost1
IR352XX
Integrated power stages
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
226
For more details on the product,
click on the part number.
OptiMOS™ Powerstage
25 A, 35 A, 40 A integrated power stages with highest eiciency on smallest form factor
Infineon’s TDA21240 powerstage is a multichip module that incorporates Infineon’s premier MOSFET technology for a single
high-side and a single low-side MOSFET coupled with a robust, high performance, high switching frequency gate driver in
a single PG-IQFN-30-2 package. The optimized gate timing allows for significant light load eiciency improvements over
discrete solutions. When combined with Infineon’s family of digital multi-phase controllers, the TDA21240 forms a complete
core voltage regulator solution for advanced micro and graphics processors as well as point-of-load applications.
Features
› For synchronous buck converter step
down voltage applications
› Maximum average current of 40 A
› Input voltage range +4.5 V to +16 V
› Power MOSFETs rated 25 V
› Fast switching technology for improved
performance at high switching frequencies
(> 500 kHz)
› Remote driver disable function
› Includes bootstrap diode
› Undervoltage lockout
› Shoot through protection
› +5 V high side and low side MOSFETs
driving voltage
› Compatible to standard +3.3 V PWM
controller integrated circuits
› Tri-state PWM input functionality
› Small package: PG-IQFN-30-2 (4 x 4 x 1 mm)
› RoHS compliant
› Thermal warningApplications
› Desktop and server VR buck converter
› Single-phase and multiphase POL
› CPU/GPU regulation in notebook, desktop graphics cards,
DDR memory, graphic memory
› High power density voltage regulator modules (VRM)
› Qualified for DC-DC industrial applications based on JEDEC
(JESD47, JESD22, J-STD20)
› General purpose POL DC-DC converters
www.infineon.com/integrated-powerstages
Part type Package Iout
[A]
Vin
[V]
Switching frequency
[MHz]
TDA21242 4 x 4 x 1 mm PQFN 25 4.5 to 16 1.0
TDA21241 4 x 4 x 1 mm PQFN 35 4.5 to 16 1.0
TDA21240 4 x 4 x 1 mm PQFN 40 4.5 to 16 1.0
PXE1210J
Power Stage
Power Stage
Power Stage
Integrated
Integrated
Integrated
Integrated power stages
227
For more details on the product,
click on the part number.
DC-DC converters
Robust range of controllers and regulators for the widest application spectrum
Our high-eiciency switching regulators and controllers help to reduce energy consumption. In addition to extending the
operating time of battery powered systems, they also significantly improve the thermal budget of the application. Overall,
this translates into minimal operating costs. For your design flexibility, they are available as adjustable voltage variants as
well as with dedicated fixed output voltage values.
So-start ramp
generator
Charge pump
Bandgap
reference
Overtemperature
shutdown
Enable
Buck
converter
Oscillator
Feed forward
7
EN
IFX91041
V
S
3
BUO
BDS
FB
1
2
8
5
COMP
SYNC
GND
6
4
45 V
≤1 A
≥2 A
>1 A
> 45 V … 60 V
Maximum input voltage
Output current
IFX90121
5 V
2.2 MHz
500 mA
IFX91041
Adj., 5 V, 3.3 V
370 kHz
1.8 A
IFX80471
Adj., 5 V
60 V, 360 kHz
2.3 A
IFX81481
Adj.
Synchronous
controller
10 A
Output current
IFX91041 block diagram Industrial DC-DC buck regulators (selection tree)
Part number VQ (multiple)
Output current
type
Output current
[A]
Product features Package
IFX81481ELV Adjustable
Buck controller
10.0 10 A synchronous DC-DC adjustable step down controller;
f = 100 kHz-700 kHz, N
PG-SSOP-14
IFX90121EL V50 5.0V
Buck converter
0.5 Vin up to 45 V, 2.2 MHz step-down regulator with low quiescewnt current PG-SSOP-14
IFX80471SK V Adjustable
Buck controller
2.3 Vin up to 60V; VQ adjustable from 1.25 V up to 15 V; external MOSFET PG-DSO-14
IFX80471SK V50 5.0V
Buck controller
2.3 Vin up to 60V; external MOSFET PG-DSO-14
IFX91041EJV Adjustable
Buck converter
1.8 VQ adjustable from 0.6 V up to 16 V; tolerance 2% up to 1000 mA PG-DSO-8
IFX91041EJ V33 3.3 V
Buck converter
1.8 VQ fixed to 3.3 V; tolerance 2% up to 1000 mA PG-DSO-8
IFX91041EJ V50 5.0V
Buck converter
1.8 VQ fixed to 5.0V; tolerance 2% up to 1000 mA PG-DSO-8
DC-DC converters
www.infineon.com/industrial-dcdc-converters
Features and benefits
Key benefits
High-eiciency regulation
Only a few external components needed for stable regulation
Perfectly suited for regulation in pre-/post-regulation power supply architectures
Key features
Input voltage up to 60 V
Output currents going from 500 mA up to 10 A
Switching frequencies ranging from 100 kHz to 2.2 MHz
Shutdown quiescent current down to below 2 µA
Current limitation and overtemperature protection
Enable feature
Switching regulators
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
228
For more details on the product,
click on the part number.
Integrated POL voltage regulators
Highest density high eiciency integrated POL (IPOL) for smart enterprise systems
Infineon’s integrated POL switching converters deliver benchmark eiciency and dramatically reduce system size. Solutions
up to 35 A are available in compact PQFN packages. Target applications include server, storage, routers and switches,
telecom base stations, digital home media, mobile computing and embedded data processing. Solutions with and without
PMBus digital communication are available in single output and multi-rail format.
Ready-to-go reference designs and the on-line PowerDesk simulator simplify the task of designing regulated voltage rails.
Dierent control topologies are available to meet an application’s specific requirements.
*Coming soon
www.infineon.com/ipol
www.infineon.com/analog-ipol
DC-DC products
1 to 35 A
›Telemetry
›Margining
›Intel SVID Support
›Parallel VID
›IR3806x: 6-35 A with PMBus™
›IR3816x: 15 A, 30 A with PMBus™ and Intel SVID
›IR38263: 30 A with PVID and PMBus™
IPOL with digital interface
PMBus™ digital IPOL Constant on-time IPOL
Easy/light-load eiciency
IR3883MTRPBF (3 A), IR3888MTRPBF (25 A),
IR3889MTRPBF (30 A), IR3887MTRPBF * (30 A)
V
IN
PGOOD
SCL
SDA
SAlert
RS+
RS–
PV
IN
Boot
SW VO
Power
good
V
in
Inventory
Configuration
Control
Telemetry
Status
Device ID
On/o configuration
fault/warnings
Sequencing delay/ramp
fault response
V
out
, I
out
, power
temperature, peak values
Comms, data, temps
Digital mode: I2C/PMBus™ interface
Dierential remote sense for
optimum output accuracy
PMBus™ IC capabilities
Point-of-load products – how to choose
Switching regulators
PGood
4.3
V<Vin<17 V
Enable
Vo
IR3887MTRPBF*
Boot
Vcc/LDO
Fb
AGnd PGnd
SW
PGood
Enable PVin
Vin
SS/Latch
Ton/Mode
VSENM
ILIM
Phase
GATEL
PGood
4.3
V<Vin<14 V
(optional
)
IR3883MTRPBF
Boot
Vcc
Vo
Fb
Gnd PGnd OCset
SW
PGood
En/FCCM PVin
Vin
PGND
229
For more details on the product,
click on the part number.
Integrated point-of-load converters IR3806x
series (6 A /15 A / 25 A / 35 A)
Digital interface IPOL voltage regulators
The digital interface IPOL devices are easy-to-use, fully integrated and highly eicient DC-DC regulator oering I2C/PMBus™,
parallel VID, Intel SVID. The on-board PWM controller and MOSFETs make the family a space-eicient solution, providing
accurate power delivery for low output voltage and high current applications.
The IR3806x family of PMBus™ enabled IR MOSFET™ IPOL based IR MOSFET IPOL voltage regulators oers:
› Compactness of integrated controller, driver and MOSFETs
› High performance analog voltage mode engine
› Flexibility of a rich PMBus™ interface
The IR381(2/3)6x family features OptiMOS™ 5 for the highest eiciency and adds Intel SVID support (IR381(/3)6x) for Intel
based systems or parallel VID (IR3826x) for voltage scaling or 8 programmable output voltages booting options to avoid
programming at start up. Pin compatible options with and without PMBus™ are available to allow the flexibility of using
PMBus™ only during evaluation or easily upgrade a system to PMBus™ without re-layout.
www.infineon.com/ipol
Part number Max. current
[A]
Package size
[mm]
Max. Vin Max. fsw Distinctive features
IR38064MTRPBF 35 5 x 7 21 V 1500 KHz
PMBus™
IR38063M 25 5 x 7 21 V 1500 KHz
IR38062M 15 5 x 7 21 V 1500 KHz
IR38060M 6 5 x 6 16 V 1500 KHz
IR38163M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID + PMBus™
IR38165M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38363M 15 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID + PMBus™
IR38365M 15 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38263M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, PVID + PMBus™
IR38265M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, PVID
IR38164M 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID + PMBus™, enhanced Imon
IRPS5401M 4+4+2+2+0.5 7 x 7 14 V 1500 KHz 5 output PMIC, PMBus™
Digital interface IPOL
Features and benefits
Key features
PMBus™ revision 1.2 compliant
≥ 66 PMBus™ commands
Wide input voltage range and single 5 V – 16 V input operations
Dierential remote sense
Ultralow jitter voltage mode eingine
Operation temp: -40° to 125° C
Key benefits
Only single chip solution with extensive PMBus™, parallel VID, Intel SVID support
allows 50 percent space saving versus external power competition
Intel SVID support for Intel-based systems
Parallel VID or PMBus™ for voltage setting and margining
Telemetry status via digital bus
Remote monitoring and update
Parameter changes by register
Flexible sequencing
High accuracy low ripple
Integrated sequencing, margin, current and voltage monitoring
Switching regulators
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
230
For more details on the product,
click on the part number.
www.infineon.com/ipol
OptiMOS™ IPOL voltage regulators with COT
Easy to use with no external compensation and smallest BOM
OptiMOS™ IR3883MTRPBF, IR3887MTRPBF *, IR3889MTRPBF, and IR3888MTRPBF integrated point-of-load DC-DC devices
are easy-to-use, fully integrated and highly eicient DC-DC regulators that operate from a wide input voltage range and
provide up to 30 A continuous current. The devices increase eiciency and power density and simplify design for POL
applications in server, enterprise storage, netcom router and switches, datacom and telecom base stations.
Block diagram IR3883M
Block diagram IR3887M (30 A)
Analog interface IPOL
Part number Max. current
[A]
Package size
[mm]
Max. Vin Max. fsw Distinctive features
IR3883MTRPBF 3 3 x 3 14 V 800 KHz Constant-on-time (COT)
IR3888MTRPBF 25 5 x 6 17 V 2000 KHz
IR3887MTRPBF * 30 4 x 5 17 V 2000 KHz
IR3889MTRPBF 30 5 x 6 17 V 2000 KHz
Switching regulators
PGood
4.3 V<Vin<14 V
(optional
)
IR3883MTRPBF
Boot
Vcc
Vo
Fb
Gnd PGnd OCset
SW
PGood
En/FCCM PVin
Vin
PGND
PGood
4.3
V<Vin<17 V
Enable
Vo
IR3887MTRPBF*
Boot
Vcc/LDO
Fb
AGnd PGnd
SW
PGood
Enable PVin
Vin
SS/Latch
Ton/Mode
VSENM
ILIM
Phase
GATEL
Main benefits
Main benefits
Enhanced Voltage Mode PWM devices oer high accuracy, ultralow ripple and noise, and higher control bandwidth for less capacitors.
Scalable solution from 3A up to 35A.
For designs requiring high density, low cost and easy design, the family includes a 3A device with Enhanced Stability Constant-on-Time (CoT) engine that does not
require external compensation enabling easy designs and fast time to market.
Quiescent current down to 5 µA
Overload, overtemperature, short circuit and reverse-polarity protection
Low current consumption
Extended temperature range -40°C ... +125°C
*Coming soon
231
For more details on the product,
click on the part number.
Voltage regulators
Energy-eicient voltage regulators and trackers
Our linear voltage regulators and trackers help to reduce energy consumption, extending operating time and minimizing
operating costs across all kinds of systems. The wide supply voltage range, low quiescent current, rich protective feature
set and choice of packages make our devices the perfect fit across a broad application spectrum, apart from automation
systems as well for heath care, traic, power tools, lighting and many other multi-market systems. Our trackers are ideal as
additional supplies for o-board loads to increase system reliability
20 V
≤500 mA ≥500 mA<500 mA>500 mA
> 20 V ... 60 V
23
3
3
4
5
7
2
Maximum input voltage
Output current
IFX54441EJ V
Adj., 3.3 V, 5 V
EN, rev. pol, 2%
300 mA
IFX1117
Adj., 3.3 V
2% accuracy
800 mA
IFX1763
Adj., 3.3 V, 5 V
EN, rev. pol, 2.5%
500 mA
1
Output current
Low quiescent current
2Low noise behavior
3Small package
4Tracker! High accuracy
5Ultra low quiescent current
7Very low dropout
IFX1963
Adj.
EN, rev. pol, 1.5%
1500 mA
IFX20001
3.3 V, 5 V
EN, rev. pol, 4%
30 mA
IFX20002
3.3 V, 5 V
EN, rev. pol, 4%
30 mA
IFX54211
3.3 V
EN
150 mA
IFX24401
5 V
EN, 2%
300 mA
IFX25001
3.3 V, 5 V
45 V, rev. pol, 4%
400 mA
IFX21401
0.5%
50 mA
Output current
IFX27001
Adj.,
3.3 V, 5 V
40 V, 3%
1000 mA
IFX25401
Adj., 5 V
EN, rev. pol, 2%
400 mA
IFX4949
RST, 1%
100 mA
IFX2931
5 V
100 mA
IFX30081
Adj., 3.3 V
50 mA
Industrial linear voltage regulator (selection tree)
www.infineon.com/industrial-voltage-regulators
Features and benefits
Key features
Input voltage up to 60 V
Output current up to 1.5 A
Output voltage adjustable or fixed to specific values
Quiescent current down to 5 µA
Overload, overtemperature, short circuit and reverse-polarity protection
Low current consumption
Extended temperature range -40°C ... +125°C
Key benefits
Pin-to-pin compatibility with industry-standard parts
Very low dropout voltageTrackers for optimized heat distribution and external
protection
Trackers for maximum system cost reduction
Small robust packages
Voltage regulators
Infineon's microcontroller families and industrial voltage regulators
Microcontroller family Input voltage [V] Input current (max.) [mA] Voltage regulator
XMC1000 family 1.8 to 5.5 <100 IFX54211/IFX2931/IFX4949/IFX25001/IFX544xx */ IFX30081
XMC4000 family 3.3 <500/300 IFX1763/IFX544xx */IFX1117/IFX30081
XC8xx 3.3 to 5.0 200 IFX20001/IFX30081/IFX21401/IFX4949/IFX544xx *
XE166/XC2000 1.5 and 3.3 or 5.0 100 IFX25401/IFX24401/IFX2931/IFX4949/IFX1763/IFX54441
TriCore™  1.5 to 3.3 >400 IFX27001/IFX91041/IFX80471/IFX25001/IFX1117
* For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
232
For more details on the product,
click on the part number.
Integrated class D audio amplifier ICs
Cooler, smaller and lighter class D audio amplifiers for great sounding products
Infineon’s MERUS™ audio solutions enable audio designers to improve the performance of their products, while increasing
eiciency and reducing solution size. Advances in semiconductor processes in combination with new innovative architectures
are behind a portfolio of class D technologies that allow professional, commercial/home and portable audio applications to
benefit from unparalleled performance, power density and reliability. The broad portfolio covers power ranges from 20W to 2kW
per channel from the smallest single-chip devices and multi-chip module (MCMs) to highly scalable discrete audio amplifier
solutions consisting of powerful MOSFET/CoolGaN™ enhancement mode (e-mode) HEMT and driver ICs combinations.
By combining our core principles, competencies, and leadership in groundbreaking power semiconductors with revolutionary
audio amplifier technologies, such as MERUS™, we provide solutions that are smaller, lighter, more robust and flexible, running
with less heat dissipation. In addition to outstanding quality and reliability, Infineon’s amplifier solutions are designed to
maximize power eiciency and dynamic range while providing best-in-class performance in product form factors that make
them an optimal fit for any high-end application. These include portable/battery powered applications, voice controlled active
speakers, television sets, stereo HiFi, soundbars, monitors, power-over-ethernet (PoE) and multichannel systems.
www.infineon.com/merus
Exceptional audio
performance
Maximized
power eiciency
Maximized
output power
Design
freedom
Fast
time to market
Design with Infineon’s solutions to benefit from:
Output power [W/Channel]
Scalable in output power Best audio performanceHighest power w/o heatsinkLowest idle power
No heatsink
20
Digital input Analog input
100 1000
2000
w/gate buer
IRS209X (1 ch) + CoolGaN™ 400 V e-mode HEMTs
IRS2092 (1 ch) + MOSFETs
IRS2052 (2 ch) + MOSFETs
IRS2093 (4 ch) + MOSFETs
IR43x1 (1 ch)
IR43x2 (2 ch)
MA12040 (1–4 ch)
MA12070 (1–4 ch)
MA12040P (1–4 ch)
MA12070P (1–4 ch)
Integrated ICs ICs + MOSFETs/e-mode GaN
Audio amplifier ICs
233
For more details on the product,
click on the part number.
Integrated MERUS™ multilevel amplifier ICs
for class D audio solutions
High power eiciency and density in small packages
With its revolutionary MERUS™ integrated multilevel class D audio amplifier ICs, Infineon is leading in eiciency and power
density. Compared to traditional class D amplifier ICs, which produce only two voltage output levels, multilevel amplifier
ICs use additional on-chip MOSFETs and capacitors to produce outputs with a higher signal granularity i.e. higher switching
frequencies and/or multiple output signal levels - typically up to five voltage levels
www.infineon.com/merus
Wireless audio
Features and benefits
Key features
Multilevel switching technology
Scalable signal “granularity”
Proprietary circuits architecture
Key benefits
Highest eiciency and power density
Potential LC filter removal
Low THD+N
Cooler operation
Low power loss
Virtually no switching loss measurable in idle mode
Filterless topology with “flying capacitor” of an integrated class D IC
PWM
modulator
Protection
Multilevel amplifiers
PVDO
Eiciency where it matters for audio reproduction
For MERUS™ integrated multilevel audio amplifier ICs,
amplifier eiciency at average output power is key. As the
graph on the le shows, MERUS™ multilevel amplifier is
much more eective than the traditional class D ampli-
fier, which translates into less power consumption in AC
input and in battery powered audio applications.
Audio amplifier ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
234
For more details on the product,
click on the part number.
MERUS™ integrated audio amplifier
multi-chip modules (MCM)
Integrated components for scalable output power and superb audio performance
Multi-chip modules integrate PWM controller and power MOSFETs in a single package to oer a highly eicient, compact
solution that reduces component count, shrinks PCB size up to 70 percent, and simplifies class D amplifier design.
www.infineon.com/merus
Wireless audio
Features and benefits
Key features
Single package with integrated PWM controller and audio-performance-
optimized power MOSFET
Overcurrent protection
Thermal shutdown
Floating dierential input
Clip detection
Best-in-class power eiciency and audio performance
Lower component count, leading to design simplification
Compatible with single supply or split rail configuration
Click noise reduction
Key benefits
Extended battery playback time
Unrivalled audio performance
Smaller solution size (BOM reduction, system level cost savings)
Eliminated need for heatsink
High noise immunity
Reliable operation
Thermal eiciency
Multi-chip audio amplifier module
PWM
modulator
Analog input class D driver family
Protection
Power
MOSFETs
LPF
Gate driver
Multi-chip audio amplifier module
PWM input class D driver family
Audio amplifier ICs
235
For more details on the product,
click on the part number.
Discrete MERUS™ audio amplifier driver ICs with MOSFET
and gallium nitride CoolGaN™ 400V e-mode HEMTs
Scalable output power with a unified design platform
Infineon’s discrete audio solutions are scalable to various output power levels, simply by replacing the external
MOSFETs or CoolGaN™ e-mode HEMTs of the driver-transistor combinations. Key parameters for the transistors used
in discrete class D audio applications include on-state resistance (RDS(on)), gate charge (QG), and reverse recovery
charge (Qrr). Our products are specifically suitable for class D audio applications and optimized for these parameters
to achieve maximized eiciency, THD and EMI amplifier performance. The CoolGaN™ 400V e-mode HEMTs portfolio
is specifically built for class D audio requirements, with high performing SMD packages to fully utilize the benefits of
gallium nitride.
Audio solution overview
Wireless audio
www.infineon.com/merus
Features and benefits
Key benefits
Unified design platform
Scalable output power up to over 2 kW per channel
Simple yet eective - exchange of external MOSFET triggers
alteration in output power level
Best-in-class power eiciency
Key advantages
Superior audio performance
Increased reliability
Unique audio experience
PWM
modulator
PWM Input class D driver family
Analog input class D driver family
Protection
Gate driver
Digital audio
MOSFET
Integrated PowIRAudio class D driver family
MERUS™
Audio IC, MCM,
Multi-level IC
StrongIRFET™
OptiMOS™, CoolMOS™
40~600 V
Switch mode power supplies – Energy eiciency on it's next level!
Dedicated Class D SMPS from 100~500 W
Audio amplifier ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
236
For more details on the product,
click on the part number.
www.infineon.com/merus
*All ICs carry a full protection scheme comprising undervoltage lockout, overtemperature warning/error, short circuit/overload protection, power stage pin-to-pin short circuit,
error reporting through serial interface (I2C), and DC protection
MERUS™ integrated multilevel audio amplifier IC product portfolio
Integrated class D audio amplifier IC portfolio
MA12040 MA12040P MA12070 MA12070P
Specifications
Number of audio channels 2xBTL 2xBTL 2xBTL 2xBTL
Max. peak power @ 4 ohm 10% THD 2x40 W 2x40 W 2x80 W 2x80 W
Supply voltage 4-18 V 4-18 V 4-26 V 4-26 V
3-level and 5-level modulation ✓✓✓✓
Max. PWM frequency 726 kHz
Audio input Analog Digital Analog Digital
HiRes audio compliant ✓ ✓
Volume and dynamic range control ✓ ✓
Idle power dissipation
Max. output and all channels switching <100 mW <110 mW <160 mW <160 mW
Audio performance (PMP2)
>107dB DNR
55 µV output noise
0.003% THD+N
>98dB DNR
135 µV output noise
0.006% THD+N
>110dB SNR 45 µV
output integrated
0.004% THD+N
101dB SNR
140 µV output noise
0.007% THD+N
Features
Comprehensive protection scheme * ✓✓✓✓
Configurable for SE or PBTL operation ✓✓✓✓
I2C communication ✓✓✓✓
Filterless implementation ✓✓✓✓
Package type
64-pin QFN package with
exposed
thermal pad
64-pin QFN package with
exposed
thermal pad
64-pin QFN package with
exposed
thermal pad
64-pin QFN package with
exposed
thermal pad
Evaluation boards EVAL_AUDIO_MA12040 EVAL_AUDIO_MA12040P EVAL_AUDIO_MA12070 EVAL_AUDIO_MA12070P
MERUS™ integrated audio amplifier multi-chip modules (MCMs)
IR4301M IR4321M IR4311M IR4302M IR4322M IR4312M
Specifications
Number of audio channels
111222
Max. power per channel
160 W 90 W 45 W 130 W 100 W 40 W
Supply voltage
~ ± 31 V or 62 V ~ ± 25 V or 50 V ~ ± 15 V or 30 V ~ ± 31 V or 62 V ~ ± 25 V or 50 V ~ ± 16 V or 32 V
Max. PWM frequency
500 kHz 500 kHz 500 kHz 500 kHz 500 kHz 500 kHz
Features
Dierential audio input
✓✓✓✓✓✓
Over-current protection
✓✓✓✓✓✓
Integrated power MOSFET
✓✓✓✓✓✓
Voltage
80 V 60 V 40 V 80 V 60 V 40 V
PWM controller
✓✓✓✓✓✓
Thermal shutdown
✓✓✓✓✓✓
Click noise reduction
✓✓✓✓✓✓
Clip detection
✓✓✓
Package type
5 x 6 mm QFN 5 x 6 mm QFN 5 x 6 mm QFN 7 x 7 mm QFN 7 x 7 mm QFN 7 x 7 mm QFN
Evaluation boards
IRAUDAMP12
IRAUDAMP19 IRAUDAMP21 IRAUDAMP15 IRAUDAMP16
IRAUDAMP17 IRAUDAMP22 IRAUDAMP18
Audio amplifier ICs
237
For more details on the product,
click on the part number.
www.infineon.com/merus
IRS2093MPBF works up to 150 W and IRS2052M works up to 300 W.
IRS2092SPBF and IRS20957SPBF work with all power levels listed above.
Recommended MOSFET (through-hole) product portfolio
Recommended MOSFET (DirectFET™) product portfolio
Recommended CoolGaN™ 400 V e-mode HEMT product portfolio
Specifications
Number of audio channels IRS20965S IRS20957SPBF IRS2092SPBF IRS2052M IRS2093MPBF IRS2452AM
Max power per channel 500 W 500 W 500 W 300 W 300 W 500 W
Supply voltage ± 100 V ± 100 V ± 100 V ± 100 V ± 100 V ± 200 V
Gate sink/source current 2.0/2.0 A 1.2/1.0 A 1.2/1.0 A 0.6/0.5 A 0.6/0.5 A 0.6/0.5 A
Features
Overcurrent protection ✓✓✓✓✓✓
Overcurrent flag ✓
PWM input ✓ ✓
Floating input ✓✓✓✓✓✓
Deadtime ✓✓✓✓✓
Protection control logic ✓✓✓✓✓✓
PWM controller ✓✓✓✓
Clip detection ✓
Click noise reduction ✓✓✓✓
Temperature sensor input ✓ ✓
Thermal shutdown ✓
Clock input ✓ ✓
Package type 16-pin SOIC
narrow
16-pin SOIC
narrow
16-pin SOIC
narrow MLPQ48 MLPQ48 MLPQ32
Evaluation boards IRAUDAMP4A
IRAUDAMP6
IRAUDAMP5
IRAUDAMP7S
IRAUDAMP7D
IRAUDAMP9
IRAUDAMP10 IRAUDAMP8 EVAL_IRAUDAMP23
MERUS™ discrete audio amplifier driver IC product portfolio
Output power Recommended discrete
audio driver IC
Speaker resistance
2 Ω 4 Ω 8 Ω
150 W IRS2093MPBF IRFB4019 IRFB4019 IRFI4020H-117P
200 W IRS2052M IRFB5615 IRFB4019 IRFI4020H-117P
300 W IRS2092SPBF IRFB4228PBF IRFB4227 IRFB4229
500 W IRS20957SPBF IRFB4228PBF IRFB4227 IRFB4229
750 W IRFB4227 IRFB4229
1000 W IRFP4668 IRFB4229 x 2
Output power Recommended discrete
audio driver IC
Speaker resistance
2 Ω 4 Ω 8 Ω
150 W IRS2093MPBF IRF6645 IRF6665 IRF6775M
200 W IRS2052M IRF6646 IRF6775M IRF6775M
300 W IRS2092SPBF IRF6644 IRF6775M IRF6785
500 W IRS20957SPBF IRF6643 IRF6641
CoolGaN™ 400 V e-mode HEMT Recommended discrete audio amplifier driver IC
Package HSOF-8-3 (TO-Leadless)
IRS20957SPBF
Pmax. Up to 200 W
RDS(on) max. 70 mΩ
OPN IGT40R070D1 E8220
Audio amplifier ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
238
For more details on the product,
click on the part number.
www.infineon.com/merus
IRAUDAMP17
Number of audio
channels: 2
Output power per
channel [RMS]: 100 W
Featured class D IC:
IR4302M
Input: Analog
OPN: IRAUDAMP17
IRAUDAMP19
Number of audio
channels: 2
Output power per
channel [RMS]: 100 W
Featured class D IC:
IR4301M
Input: Analog
OPN: IRAUDAMP19
IRAUDAMP21
Number of audio
channels: 2
Output power per
channel [RMS]: 135 W
Featured class D IC:
IR4321M
Input: Analog
OPN: IRAUDAMP21
IRAUDAMP22
Number of audio
channels: 2
Output power per
channel [RMS]: 100 W
Featured class D IC:
IR4322M
Input: Analog
OPN: IRAUDAMP22
IRAUDAMP12
Number of audio
channels: 2
Output power per
channel [RMS]: 130 W
Featured class D IC:
IR4301M
Input: Analog
OPN: IRAUDAMP12
MERUS™ integrated audio amplifier multi-chip module (MCM) evaluation boards
Recommended audio evaluation boards
Enabling fast time to market and device performance evaluation
EVAL_AUDIO_MA12070
Number of audio channels:
2 channels BTL or
1 channel PBTL or
2 channels SE + 1 BTL or
4 channels SE
Output power per channel
(2xBTL, Peak, 10% THD,
4 ): 2x 80 W
Featured module IC: MA12070
Input: Analog
OPN: EVALAUDIOMA12070TOBO1
EVAL_AUDIO_MA12070P
Number of audio channels:
2 channels BTL or
1 channel PBTL or
2 channels SE + 1 BTL or
4 channels SE
Output power per channel
(2xBTL, Peak, 10% THD,
4 ): 2x 80 W
Featured module IC: MA12070P
Input: Digital
OPN: EVALAUDIOMA12070PTOBO1
MERUS™ integrated multilevel audio amplifier IC evaluation boards
Audio amplifier ICs
239
For more details on the product,
click on the part number.
www.infineon.com/merus
Discrete MERUS™ audio amplifier driver IC and MOSFET evaluation boards
IRAUDAMP4A
Number of audio
channels: 2
Output power per
channel [RMS]: 120 W
Featured driver IC: IRS20957S
Featured MOSFET:
IRF6645TRPbF
OPN: IRAUDAMP4A
IRAUDAMP5
Number of audio
channels: 2
Output power per
channel [RMS]: 120 W
Featured driver IC: IRS2092S
Featured MOSFET:
IRF6645TRPbF
OPN: IRAUDAMP5
IRAUDAMP9
Number of audio
channels: 1
Output power per
channel [RMS]: 1700 W
Featured driver IC: IRS2092S
Featured MOSFET:
IRFB4227PbF
OPN: IRAUDAMP9
IRAUDAMP6
Number of audio
channels: 2
Output power per
channel [RMS]: 250 W
Featured driver IC: IRS20957S
Featured MOSFET:
IRF6785MTRPbF
OPN: IRAUDAMP6
IRAUDAMP10
Number of audio
channels: 2
Output power per
channel [RMS]: 370 W
Featured driver IC: IRS2052M
Featured MOSFET:
IRF6775MTRPbF
OPN: IRAUDAMP10
IRAUDAMP7S
Number of audio
channels: 2
Output power per
channel [RMS]: 500 W
Featured driver IC: IR-
S2452AM
Featured MOSFET:
IRFI4019H-117P
OPN: IRAUDAMP7S
IRAUDAMP23
Number of audio
channels: 2
Output power per
channel [RMS]: 500 W
Featured driver IC: IR-
S2452AM
Featured MOSFET:
IPP60R180C7
OPN: IRAUDAMP23
Audio amplifier ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
240
For more details on the product,
click on the part number.
Discrete audio amplifier driver IC and
CoolGaN™ 400 V evaluation board
Power supply units for audio
evaluation boards
IRAUDPS1
Input voltage: 12 VDC
Output voltage: ± 35 V
Output power per channel
[RMS]: 100 W
Featured driver IC:
IR2085
Description:
250-1000 W scalable
audio power supply
OPN: IRAUDPS1
IRAUDPS3
Input voltage: 110/220 VAC
Output voltage: ± 30 V
Output power per channel
[RMS]: 200 W
Featured driver IC:
IRS27952S
Description:
Power supply for class D
audio amplifier
OPN: IRAUDPS3
EVAL_AUDAMP24
Number of audio
channels: 2
Output power per
channel [RMS]: 300 W @ 1%
Featured driver IC: IRS20957S
Featured HEMT
IGOT40R070D1
IGT40R070D1
OPN: EVAL_AUDAMP24
www.infineon.com/merus
www.infineon.com/gan
Audio amplifier ICs
241
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
242
For more details on the product,
click on the part number.
CDM10V and CDM10VD – most flexible
dimming interface ICs for 0-10 V input
Infineon’s fully integrated dimming solutions
Infineon’s CDM10V and CDM10VD are the industry’s first single-chip lighting interface ICs. They are capable of
transforming an analog 0–10 V input into a PWM or dimming input signal, required by a lighting controller IC. CDM10V
and CDM10VD devices are dedicated for commercial and industrial LED lighting applications. The compact and highly
integrated devices allow designers to replace up to 25 discrete components, used in conventional 0–10 V dimming
schemes, with a single device. Supplied in an ultra-miniature 6-pin SOT package, the CDM10Vx and CDM10VDx
perfectly match small PCBs with high component densities.
www.infineon.com/cdm10V
› 0–10 V interface
› Resistor/potentiometer
› PWM-generator
ICL8105
CDM10V
VCC supply
11–25 V LDOVCC
Iout
GND
Rdim+
RxD
VFSS
OSC
Bandgap
UVLO
FSMeFuses
8-bit
PWM_gen
DigitalAnalog
UART
Current
source
DIM
ADC
8-bit
Current
source
PWM_out
85–
305 V AC
Linefilter
Typical application schematic using CDM10V
Product type Iout
[mA]
Min. duty cycle [%] PWM output
frequency [kHz]
Dimmer/resistor bias
current [A]
Dimm-to-O Ordering code
CDM10V 5 1/2/5/10 0.2/0.5/1/2 50/100/200/500 Disabled/enabled CDM10VXTSA1
CDM10V-2 5 n.a. 1 200 Enabled CDM10V2XTSA1
CDM10V-3 5 1 1 200 Disabled CDM10V3XTSA1
CDM10V-4 5 n.a. 2 100 Enabled CDM10V4XTSA1
CDM10VD 5 5 1 120 Enabled CDM10VDXTSA1
CDM10VD-2 5 10 1 120 Enabled CDM10V2DXTSA1
CDM10VD-3 1 5 1 120 Enabled CDM10V3DXTSA1
CDM10VD-4 1 10 1 120 Enabled CDM10V4DXTSA1
Board name Description Ordering code
COOLDIM_PRG_BOARD Configuration board for CDM10V only COOLDIMPRGBOARDTOBO1
REF-XDPL8220-U30W 30 W two stage PFC FB digital power, eicient and flicker free reference design with CDM10V REFXDPL8220U30WTOBO1
REF-XDPL8105-CDM10V 40 W single stage PFC FB digital power reference design with CDM10V REFXDPL8105CDM10VTOBO1
Features and benefits
Key benefits
Active dimming (0–10 V) and passive dimming (resistor)
Embedded digital signal processing which maintains minimum variations
from device to device
PWM input
One-time configurable device: CDM10V and preconfigured devices with various
feature sets
Key advantages
Single-device solution leading to low BOM and PCB savings
Dimming ICs in small SOT-23 package for high power density designs
Granular portfolio for highest flexibility and easy design-in
Wide input VCC range 11–25 V, extended range down to 6 V for CDM10V
Attractive pricing and faster time to market
Lighting ICs
243
For more details on the product,
click on the part number.
DC-DC switch mode LED driver ICs
ILD8150/ILD8150E – 80 V DC-DC buck LED driver IC for high-power LEDs
and high-performance hybrid dimming
The ILD8150 is 80 V DC-DC converter IC, designed to be used in LED applications to drive high power LEDs. For
applications operating close to safe extra low voltage (SELV) limits, it provides a high safety voltage margin. The buck
LED driver IC is tailored for LEDs in general lighting applications with average currents up to 1.5 A using a high-side
integrated switch. Several performance and protection features provide the right fit for professional LED lighting.
The hysteretic current control provides an extremely fast regulation and stable LED current combined with good EMI
performance. The eiciency of the LED driver IC is remarkably high, reaching more than 95 percent eiciency over a
wide range. A PWM input signal between 250 Hz and 20 kHz controls dimming of the LEDs current in analog mode from
100 to 12.5 percent and 12.5 to 0.5 percent in PWM mode with flicker-free modulation frequency of 3.4 kHz.
Digital PWM dimming detection with high resolution makes ILD8150/E the perfect LED driver IC for the use together
with microcontrollers. Precise output current accuracy from device to device under all loads and input voltages
conditions makes it perfect for tunable white and flat panel designs where current must be identical string to string.
BOOT
DIM SW
CS
VCC
GND
ILD8150/ILD8150E
SD
VIN
80
V
www.infineon.com/ild8150
Type Description Package Ordering code
ILD8150 80 V DC-DC buck LED driver IC DSO-8 ILD8150XUMA1
ILD8150E 80 V DC-DC buck LED driver IC DSO-8 exposed pad ILD8150EXUMA1
REF_ILD8150_DC_1.5A Reference design board 1.5 A Board with ILD8150E REFILD8150DC15ATOBO1
REF_ILD8150_DC_1.5A_SMD Reference design board 1 A with SMD inductor Board with ILD8150E REFILD8150DC15ASMDTOBO1
Features and benefits
Key benefits
Wide input voltage ranging from 8–80 VDC
Up to 1.5 A average output current, adjustable via shunt resistor
Eiciency > 95 percent
Up to 2 MHz switching frequency
So-start
PWM dimming input, with 250 Hz to 20 kHz PWM dimming frequency
Key advantages
Hybrid dimming for flicker free light down to 0.5 percent
› Analog dimming 100 percent – 12.5 percent
› PWM dimming 12.5 percent – 0.5 percent with 3.4 kHz flicker-free
modulation, dim-to-o
Typical 3 percent output current accuracy
Overtemperature protection
Pull-down transistor to avoid LED glowing in dim-to-o
DSO-8 package to enable wave soldering
DSO-8 with exposed pad for higher thermal performance (ILD8150E)
Lighting ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
244
For more details on the product,
click on the part number.
DC-DC switch mode LED driver ICs
ILD series DC-DC switch mode LED driver ICs
The ILD series are switch mode LED driver ICs for high power LEDs. They combine protection features that contribute
to the lifetime of LEDs with the flexibility in output current range up to multiple amperes. The new ILD series include
LED driver ICs with integrated power stage, as well as with external MOSFET achieving up to 98 percent driver eiciency
across a wide range of general lighting applications.
Type V
s
(min.)
[V]
V
s
(max).
[V]
I
out
(typ.)
[mA]
I
out
(max.)
[mA]
Package Dimming Topology f
sw
Features
Ordering code
ILD1151 4.5 45 90 3.000 SSOP-14 Analog/digital
Boost,
buckboost
SEPIC
Adjustable
100-500 kHz
Multi topology controller, constant
current or constant voltage mode,
overvoltage, overcurrent, short on
GND protection
ILD1151XUMA1
ILD6070 4.5 60 Selec-
table by
resistor
700 DSO-8
exposed pad
Digital output
Hysteretic buck
1 MHz Integrated switch rated up to 700 mA,
PWM or analog dimming input, ad-
justable overtemperature protection,
overcurrent protection
ILD6070XUMA1
ILD6150 4.5 60 Selec-
table by
resistor
1.500 DSO-8
exposed pad
Digital output
Hysteretic buck
1 MHz Integrated switch rated up to 1.500
mA, PWM or analog dimming input,
adjustable overtemperature protec-
tion, overcurrent protection
ILD6150XUMA1
ILD8150 8
80
Selec-
table by
resistor
1.500
DSO-8 Hybrid (analog
down to 12%
and PWM down
to 0,5%)dim-
ming output
Hysteretic buck 2 MHz Integrated 80 V switch rated up to
1.500 mA with low RDS(on), hybrid
dimming down to 0.5%, UVLO,
thermal protection, digital so-start,
flicker-free operation
ILD8150XUMA1
ILD8150E 8
80
Selec-
table by
resistor
1.500 DSO-8
exposed pad
Hybrid (analog
down to 12%
and PWM down
to 0,5%) dim-
ming output
Hysteretic buck 2 MHz Integrated 80 V switch rated up to
1.500 mA with low RDS(on), hybrid
dimming down to 0.5%, UVLO,
thermal protection, digital so-start,
flicker-free operation
ILD8150EXUMA1
(op
tional for
so
start)
www.infineon.com/ild
Features and benefits
Key benefits
Wide input voltage range up to 80 V
Scalability in output current from 90 mA up to multiple amperes
Alternative dimming concepts: digital or analog
Hybrid dimming: analog and digital output combined for flicker free light
down to 0.5 percent realized with ILD8150
Key advantages
Superior adjustable overtemperature protection for ILD6150 and ILD6070
contributing to longer LED lifetime
Overvoltage and overcurrent protection
ILD1151 supports boost, buck-boost and SEPIC topologies
Lighting ICs
245
For more details on the product,
click on the part number.
Lighting ICs
A unique feature of BCR601 is to provide feedback to the primary side via an optocoupler to control the output voltage
of the primary side converter, e.g. XDPL8218. The integrated control loop minimizes the voltage overhead and power
dissipation of the external driver transistor. This capability, coupled with the adjustment of voltage overhead by
external configuration according to application needs, leads to power- and cost-eicient LED systems.
AC line ripple suppression, analog dimming option and various protection features round up this device for LED drivers
allowing for flicker-free light and longevity of LEDs.
Type Description Ordering code
BCR601 60 V linear LED controller IC with voltage feedback to primary side BCR601XUMA1
DEMO_BCR601_60V_IVCTRL Demonstration board BCR601 current and voltage control, 500 mA DEMOBCR60160VIVCTRLTOBO1
Order information for BCR601
Typical application schematic
N-channel MOSFETs
e.g. OptiMOS™ BSP716N
BCR601
Controller IC
e.g. XDPL8218
VS
OPTO
MFIO
DRV
OVP VDROP
GND
VSENSE
Cin
COVP
ROVP2
ROVP1
Rsense
RDROP
DAC/MCU
e.g. XMC1200
CDROP
Rset
RPI CPI
ROPTO
COPTO ZD1
R
ZENER
www.infineon.com/bcr601
Linear current regulators
60V linear LED controller IC with active headroom control for power- and cost-
eicient linear regulation on DC-DC side
Features and benefits
Key features and benefits
Active headroom control (supports an optocoupler feedback loop to primary side minimizing power losses)
Dimming in pure analog mode down to 3%
Suppresses the voltage ripple of the power supply driving a constant LED current for high light quality
The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs
Supports wide current range depending on external driver transistor
Supply voltage range up to 60 V
Gate driver current 10 mA
LED current can be adjusted by Rset functionality
Overtemperature protection and adjustable overvoltage protection
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
246
For more details on the product,
click on the part number.
Lighting ICs
www.infineon.com/bcr602
60 V linear LED controller IC for dimmable LED applications
The BCR602 is a perfect fit for 48V LED applications by combining small form factor with low cost. Through its higher
integration, BOM savings and ensuring long lifetime of LEDs, this controller has many advantages compared to
discrete solutions. BCR602 is a linear LED controller IC regulating the LED current with an external driver transistor. It
supports either NPN bipolar transistors or N-channel MOSFETs to cover a wide LED current and power range. AC line
ripple suppression, flexible dimming options and protection features make it a perfect fit for LED modules allowing for
dimmable, flicker-free light and longevity of LEDs.
Type Description Ordering code
BCR602 60 V linear LED controller IC BCR602XTSA1
DEMO_BCR602_60V_ICTRL Demonstration board BCR602U current control, 200 mA DEMOBCR60260VICTRLTOBO1
Order information for BCR602
Typical application schematic
N-channel MOSFETs
e.g. OptiMOS™ BSP716N
Rpred
BCR602
DRV
GND
VSENSE
VS
MFIO
R1Rset
DAC
PWM
Controller IC
e.g. XDPL8218
Microcontroller
e.g. XMC1200
V
Features and benefits
Key features and benefits
Suppresses the voltage ripple of the power supply dring a constant LED current for high light quality
Deep dimming down to 1% (PWM), pure analog dimming down to 3%
The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs
Supports wide current range depending on external driver transistor
Supply voltage range up to 60 V makes it ideal for 48 V designs
Gate driver current 10 mA
LED current can be adjusted by Rset functionality
Overtemperature protection
247
For more details on the product,
click on the part number.
BCR40x and BCR43x linear LED driver ICs for low power LEDs
The BCR40x family is the smallest size and lowest cost series of LED drivers. These products are perfectly suited for
driving low power LEDs in general lighting applications. Thanks to AEC-Q101 qualification, it may also be used in
automotive applications such as brake lights or interior.
The advantage over resistor biasing is:
› Long lifetime of LEDs due to constant current in each LED string
› Homogenous LED light output independent of LED forward
voltage binning, temperature increase and
supply voltage variations
The advantage versus discrete semiconductors is:
› Reduced part count and assembly eort
› Pretested output current
› Defined negative temperature co-eicient protection
www.infineon.com/bcr
* Ultralow voltage drop version BCR430U with only 135 mV at 50 mA
* * Coming soon
Needing more details on
replacing resistors?
Download now the application note
"Driving low power LEDs from
10 to 65 mA LED driver ICs with
BCR401W and BCR402W family"
Low-power LED driver ICs (5-100 mA)
Type Group Topology Vs (min.)
[V]
Vs (max.)
[V]
Iout (typ.)
[mA]
Iout (max.)
[mA]
Dimming Package Ptot (max.)
[ mW]
Ordering code
BCR401U LED drivers for low-power LEDs Linear 1.4 40 10.0 65
PWM by
external
transistor
SC74 750 BCR401UE6327HTSA1
BCR401W LED drivers for low-power LEDs Linear 1.2 18 10.0 60 SOT343 500 BCR401WH6327XTSA1
BCR402U LED drivers for low-power LEDs Linear 1.4 40 20.0 65 SC74 750 BCR402UE6327HTSA1
BCR402W LED drivers for low-power LEDs Linear 1.4 18 20.0 60 SOT343 500 BCR402WH6327XTSA1
BCR405U LED drivers for low-power LEDs Linear 1.4 40 50.0 65 SC74 750 BCR405UE6327HTSA1
BCR430U * LED drivers for low-power LEDs Linear 6 42 Defined by Rset 100 SOT23 600 BCR430UXTSA1
BCR431U * * LED drivers for low-power LEDs Linear 6 42 - - - SOT23-6 600 BCR431UXTSA1
ILED [mA]
Vdrop [mV]
Rset = 9.1 kΩ
Rset = 6.2 kΩ
40
30
50
60
70
80
90
100
110
100150 200250 300350 40
0
The voltage drop at the integrated LED driver stage
can go down to 135 mV at 50 mA and less improving
the overall system eiciency and providing extra
voltage headroom to compensate for
tolerances of LED forward voltage or supply voltage.
With the BCR430U and BCR431U, additional LEDs can
be added to lighting designs or longer LED strips can
be created without changing the supply voltage.
LED current versus voltage drop (VS = 24 V)
Features and benefits
Key features and benefits
Output current from 10 to 100 mA (adjustable by external resistor)
Supply voltage up to 18 V (BCR401W, BCR402W) and up to 40V (BCR401U, BCR402U, BCR405U, BCR430U, BCR431U *)
Reduction of output current at high temperature, contributing to long lifetime LED systems
Extra low voltage drop for more voltage headroom and flexibility in designs (BCR430U, BCR431U)
Excellent ESD perfomance on device and system level for BCR431U
Very small form factor packages with up to 750 mW max. power handling capability
Lighting ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
248
For more details on the product,
click on the part number.
Lighting ICs
www.infineon.com/bcr
1) See page 245 for detailed description
2) See page 246 for detailed description
Type Group Topology Vs (min.)
[V]
Vs (max.)
[V]
Iout (typ.)
[mA]
Iout (max.)
[mA]
Dimming Package Ptot (max.)
[ mW]
Ordering code
BCR320U LED drivers for
mid-power LEDs
Linear 1.4 24 250 300 No SC74 1000 BCR320UE6327HTSA1
BCR321U Linear 1.4 24 250 300 Digital input SC74 1000 BCR321UE6327HTSA1
BCR420U Linear 1.4 40 150 200 No SC74 1000 BCR420UE6327HTSA1
BCR421U Linear 1.4 40 150 200 Digital input SC74 1000 BCR421UE6327HTSA1
BCR450 LED controller Linear 3.0 27 70 Ext. switch Digital input SC74 500 BCR450E6327HTSA1
BCR601 1) LED controller Linear 8.0 60 Ext. switch Ext. switch Analog PG-DSO-8 360 BCR601XUMA1
BCR602 2) LED controller Linear 8.0 60 Ext. switch Ext. switch Analog/PWM PG-SOT23-6 360 BCR602XTSA1
BCR32x/BCR42x/BCR450/BCR601/BCR602 linear LED driver and controller ICs
for medium and high power LEDs
The BCR32x and BCR42x LED drivers are dedicated linear regulators for 0.5 W LEDs with a maximum output current of
250 mA. They are optimized in terms of cost, size and feature set for medium power LEDs in general lighting applications.
Thanks to AEC-Q101 qualification, it may also be used in automotive applications such as brake lights or interior.
RSENSE
(optional)
VS
Von:
BCR320
BCR420
Von:
BCR321
BCR421
+
–
Microcontroller
Typical application schematic
Medium- and high-power LED driver ICs
Features and benefits
Key features and benefits
Output current from 10 mA up to 300 mA for BCR32x (200 mA for BCR42xU), adjustable by external resistor
Supply voltage up to 40 V for BCR42x (24 V for BCR32x)
Direct microcontroller interface for PWM dimming with BCR321U/BCR421U
Reduction of output current at high temperature, contributing to long lifetime LED systems
Dedicated 60 V devices targeting 48 V systems BCR601 for LED Driver/ BCR602 for LED Module
Very small form factor packages with up to 1000 mW max. power handling capability
249
For more details on the product,
click on the part number.
www.infineon.com/oline-led-driver
XDP™ digital power – digital single- and dual-stage flyback combo controllers
The XDP™ portfolio of high performance digital power control ICs addresses
today’s challenges such as smart or connected lighting, meeting demanding LED
driver requirements with a unique set of features.
Mixed-signal control ICs for solid-state lighting luminaires
Infineon's mixed-signal control ICs for LED drivers deliver excellent power quality
and high eiciency for LED lighting applications supporting dimming levels
down to 1%. The integration of advanced functions saves external components
and minimizes system cost. The wide variety of features and functions gives the
option to choose the best fitting part for the application.
AC-DC LED driver IC
Digital and mixed signal, single- and dual-stage high voltage
control ICs for LED drivers
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
250
For more details on the product,
click on the part number.
XDP™ LED
The IC family XDP™ is the first all-in-one package solutions combining a digital controller with key power
peripherals. Such integration provides exceptional flexibility and performance. The XDP™ family addresses
essential features for advanced LED driver.
XDPL8105 – digital flyback controller IC for LED driver
The XDPL8105 is a digital, single-stage flyback controller with high power factor for constant current LED driver.
The device oers versatile functions for dierent indoor and outdoor lighting applications. The IC is available in a DSO-8
package and it provides a wide feature set, requiring a minimum of external components. The advanced control algorithms
in the digital core of the XDPL8105 provide multimode operation for high eiciency. Configurable parameters allow last
minute changes, shorten the product development and reduce hardware variants. The extensive set of configurable
standard and sophisticated protection mechanisms ensure safe, reliable and robust LED driver device for diverse use cases.
www.infineon.com/xdpl8105
Typical application schematic
Type Description Ordering code
XDPL8105 Digital flyback controller IC XDPL8105XUMA1
REF-XDPL8105-CDM10V
40 W reference design with CDM10V isolated 0 V-10 V dimming interface
REFXDPL8105CDM10VTOBO1
Order information for XDPL8105
85
… 305 VAC
VCC
CS
GD
GND
ZCD
XDPL8105
Output
HV
R_CS
I
out
CoolMOS™
Optional VCC
regulator
Features and benefits
Key features and benefits
Constant current with primary side regulation
Supports AC and DC input
Nominal input voltage range 90-305 VAC or 120-350 VDC
Integrated 600 V start-up cell
Power factor > 0.9 and THD < 15 percent over wide load range
Highly accurate primary side control output current typ. ± 3 percent
Reference board eiciency > 90 percent
Internal temperature guard with adaptive thermal management
Multimode operation
› QRM (quasi-resonant mode)
› DCM (discontinuous conduction mode)
› ABM (active burst mode)
Digital parameters
Relevant error conditions are monitored and protected
› Undervoltage
› Overvoltage
› Open load
› Output shorted
Lighting ICs
251
For more details on the product,
click on the part number.
XDPL8210 – digital flyback constant current controller IC for
LED driver with 1 percent dimming
The XDPL8210 is a digital, single-stage, quasi-resonant flyback controller with high power factor and high precision
primary side controlled constant current output. The IC is available in a DSO-8 package and it provides a wide feature
set, which requires only a small number of external components. Sophisticated algorithms provide flicker-free
dimming below one percent. The driver fully supports IEC61000-3-2 class C designs. The limited power mode improves
functional safety, while configurable parameters allow last minute changes, shorten the product development and
reduce hardware variants. The extensive set of configurable standard and sophisticated protection mechanisms ensure
safe, reliable and robust LED driver for a large set of use cases.
www.infineon.com/xdpl8210
Typical application schematic
Type Description Ordering code
XDPL8210 Digital flyback constant current controller IC XDPL8210XUMA1
REF-XDPL8210-U35W
35 W reference design with CDM10V isolated 0 V-10 V dimming interface
REFXDPL8210U35WTOBO1
Order information for XDPL8210
XDPL8210
PWM
90
… 305 VAC
VCC
CS
GD
GND
ZCD
Output
HV
RCS
CVCC
Iout
Optional VCC
regulator
CoolMOS™
Features and benefits
Key features and benefits
Constant current with primary side regulation
Supports AC and DC input
Nominal input voltage range 90-305 VAC or 90-430 VDC
Reference board eiciency > 90 percent
Power factor > 0.9 and THD < 15 percent over wide load range
Standby power < 100 mW
Internal temperature guard with adaptive thermal
management
Multimode operation
› QRM (quasi-resonant mode)
› DCM (discontinuous conduction mode)
› ABM (active burst mode)
Digital parameters
Relevant error conditions are monitored and protected
› Undervoltage
› Overvoltage
› Open load
› Output shorted
Lighting ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
252
For more details on the product,
click on the part number.
Lighting ICs
XDPL8218 – high power factor constant voltage flyback IC with secondary
side regulation
The XDPL8218 is a digital, highly integrated, future-proof device combining a constant voltage quasi-resonant flyback
controller with algorithms for high power factor and low THD. The main application field for XDPL8218 are dual stage
designs with a DC-DC stage at secondary side and XDPL8218 as primary side. The device manages wide load ranges and
reacts fast and stable to dynamic load changes. The digital core of the XDPL8218 enables high eiciency over full output
power range, multimode operation with quasi-resonant switching at high power, discontinuous conduction mode fre-
quency reduction at medium power and active burst mode at low power. The XDPL8218 is available in a DSO-8 package.
www.infineon.com/xdpl8218
Type Description Ordering code
XDPL8218 Digital flyback CV-output controller IC XDPL8218XUMA1
REF-XDPL8218-U40W 40 W reference board with replaceable feedback circuit REFXDPL8218U40WTOBO1
Order information for XDPL8218
Feedback circuit
In
put
VCC
CS
GD
ZCD
Outp
ut
HV
FB
GND
CVCC
RCS
XDPL8218
CoolMOS™
Typical application schematic
Features and benefits
Key features and benefits
Constant voltage with secondary side regulation
Supports AC and DC input
Nominal input voltage range 100-305 VAC or 90-430 VDC
Reference board eiciency > 90 percent
Power factor > 0.9 and THD < 15 percent over wide load range
Standby power < 100 mW
Internal temperature guard with adaptive thermal management
Brown-out and brown-in protections
Embedded digital filters
Multimode operation
› QRM (quasi-resonant mode)
› DCM (discontinuous conduction mode)
› ABM (active burst mode)
Digital parameters
Relevant error conditions are monitored and protected
› Undervoltage
› Overvoltage
› Open load
› Output shorted
253
For more details on the product,
click on the part number.
Features and benefits
Key features and benefits
Features and benefits
Constant current, constant voltage, limited power with primary side regulation
PWM dimming input controls respective analog output current
Reference board eiciency > 90 percent
Power factor > 0.9 and THD < 15 percent over wide load range
Nominal input voltage range 100-305 VAC or 90-430 VDC
Standby power < 100 mW
Internal temperature guard with adaptive thermal management
Multimode operation
› QRM (quasi-resonant mode)
› DCM (discontinuous conduction mode)
› ABM (active burst mode)
Digital parameters
Relevant error conditions are monitored and protected
› Undervoltage
› Overvoltage
› Open load
XDPL8220 - digital dual stage multi-mode flyback controller for CC, CV, LP
with primary side regulation
The XDPL8220 simplifies for the lighting industry to realize essential features for smart lighting and increases the
benefits to the end user and the luminaire manufacturers. The XDPL8220 is a digital, highly integrated, future-proof
device combining a quasi-resonant PFC plus a quasi-resonant flyback digital controller with primary side regulation.
The multi control features - constant voltage, constant current, and limited power - enable a highly versatile LED driver
(e.g. window LED driver). The main application field of the XDPL8220 is advanced dual stage LED driver for indoor or
outdoor lighting. The IC is available in a DSO-16 package.
www.infineon.com/xdpl8220
Type Description Ordering code
XDPL8220 Digital dual stage multimode flyback Controller for CC, CV, LP XDPL8220XUMA1
REF-XDPL8220-U30W 30 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8220U30WTOBO1
REF-XDPL8220-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8220U50WTOBO1
REF-XDPL8220-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8220U100WTOBO1
Order information for XDPL8220
Input
volt
age
L
N
GDF
CSF
XDPL8220
GN
PW M
UART GND
VVC
ZC
ART
Vsupply
SPFC
DPFC
S
LED-
LE
D+
PW M
EM P
R_NTC
CoolMOS™
CoolMOS™
Typical application schematic
Lighting ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
254
For more details on the product,
click on the part number.
Lighting ICs
XDPL8221 - digital dual stage multi-mode flyback controller for CC, CV, LP with
1 percent dimming and serial interface
The XDPL8221 is a digital, highly integrated, future-proof device combining a quasi-resonant PFC with a quasi-resonant
flyback controller with primary side regulation. A serial communication interface supports direct communication with
an external microcontroller unit (MCU). The XDPL8221 is especially designed for advanced LED driver in smart lighting
or IoT applications, featuring flicker-free dimming down to 1 percent of nominal current. The device enables customiz-
able LED driver and simplifies the generation and maintenance of dierent variants without increasing the number of
stock keeping units. The IC is available in a DSO-16 package.
www.infineon.com/xdpl8221
Type Description Ordering code
XDPL8221 Digital dual stage multimode flyback Controller for CC, CV, LP with 1 percent dimming XDPL8221XUMA1
REF-XDPL8221-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8221U50WTOBO1
REF-XDPL8221-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8221U100WTOBO1
Order information for XDPL8221
Typical application schematic
Input
volt
age
XDPL8221
GDPFC
CSPFC
TEMP
HV
VS
UART PWM PWM
GND
ZCD
VCC
CSFB
GDFB
R_NTC
N
L
LE
D-
LE
D+
UART VsupplyGND
Features and benefits
Key features and benefits
Nominal input voltage range 100-305 VAC or 90-430 VDC
Reference board eiciency > 90 percent
Power factor > 0.9 and THD < 15 percent over wide load range
UART Interface for control and real-time monitoring
Constant current, constant voltage, limited power with primary side regulation
1 percent dimming
Dim-to-o with low standby power < 100 mW
Internal temperature guard with adaptive thermal management
The UART interface and the command set enable to control the function of the XDPL8221 or inquire
status information
Multimode operation
› QRM (quasi-resonant mode)
› DCM (discontinuous conduction mode)
› ABM (active burst mode)
Digital parameters
Relevant error conditions are monitored and protected
› Undervoltage
› Overvoltage
› Open load
› Output shorted
255
For more details on the product,
click on the part number.
Typical application schematic
Order information for ICL5102
ICL5102
High performance PFC + resonant controller for LCC and LLC
With ICL5102 Infineon oers a highly integrated combo controller IC with a universal input of 70V to 325V, which allows
manufactures to realize global designs, keeping cost for product variety and stock low. Highest eiciency of up to 94
percent by resonant topology, a THD factor less than 3.5 percent and a high power factor of more than 0.95 allow for
more lumen output and less thermal load, enabling cost eective designs and keeping cost for LEDs and heat sink low.
Thanks to the high integration, there is no need for additional expensive components in PFC and LLC stage, reducing
the overall BOM cost. In addition integrated protection features complement the ICL5102 features.
www.infineon.com/icl5102
Type Description Ordering code
ICL5102 PFC and resonant controller for LCC and LLC ICL5102XUMA2
REF-ICL5102-U130W-CC PFC/LLC-CC constant current evaluation board 130 W LED driver REFICL5102U130WCCTOBO1
Features and benefits
Key features and benefits
Small form factor LED driver and low BOM
The high level of integration assures a low count of external components, enabling small form factor designs
and making them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor
and outdoor applications
High performance, digital PFC and advanced HB driver
The high performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM and
DCM mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions
down to 0.1 percent of the nominal power without audible noise
Fast time-to-light and low standby
With start-up current of less than 100 µA the controller provides very fast time-to-light within less than 300
ms, while standby the controller changes into active burst mode which reduces power consumption to less
than 300 mW
Safety first
The controller has a comprehensive set of protection features built in to increase the system safety. It moni-
tors in the run mode the complete system regarding bus over- and undervoltage, open loop, overcurrent of
PFC and/or inverter, output overvoltage, overtemperature and capacitive load operation
Lighting ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
256
For more details on the product,
click on the part number.
Lighting ICs
V
ACIN
ROVP_1
Rf_min
RF
BO
BM
VCC
PFCZCD
PFCGD
PFCVS
PFCCS
HSGD
HSVCC
HSGND
LSGD
LSCS
OVP
GND
ICL5102HV
OTP
NTC
CVCC
RRBM
BO2
ROVP_2
DBO2
RBO1
DBO1
Lr
Lm
Cr1
Cr2
L4_3
L4_4
VOUT
+
VOUT -
Cr3
LPFC
RBM_DA SFH617-A3
CV & CC Regulator
Typical application schematic
ICL5102HV
High performance PFC + resonant controller for LCC and LLC, supporting 980 V high side
ICL5102HV control IC for LED drivers oers a unique one-package solution for lighting applications up to 350 W,
supporting LLC/LCC topology. It is particularly designed to deliver best performance of total harmonic distortions
(THD) and power factor (PF). Compared to level-shier technology, the integrated coreless transformer not only further
reduces the loss at high operation frequency, but also enhances the capability of handling huge negative voltage (-600 V
on HSGND). Reduce the number of external components to optimize form factor and reduce bill of material (BOM) with
the integrated two-stage combination controller (PFC + LLC/LCC) for lighting applications. Simplify your design and
shorten time-to-market.
Order information for ICL5102HV
www.infineon.com/icl5102hv
Type Description Ordering code
ICL5102HV PFC and resonant controller for LCC and LLC ICL5102HVXUMA1
REF-ICL5102HV-U150W PFC/LCC evaluation board 150 W, CC LED driver REFICL5102HVU150WTOBO1
Features and benefits
Key features and benefits
Small form factor LED driver and low BOM
The high level of integration assures a low count of external components, enabling small form factor designs
and making them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor
and outdoor applications
High performance, digital PFC and advanced HB driver
The high performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM and
DCM mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions
down to 0.1 percent of the nominal power without audible noise
Fast time-to-light and low standby
With start-up current of less than 100 µA the controller provides very fast time-to-light within less than 300
ms, while standby the controller changes into active burst mode which reduces power consumption to less
than 300 mW
Safety first
The controller has a comprehensive set of protection features built in to increase the system safety. It moni-
tors in the run mode the complete system regarding bus over- and undervoltage, open loop, overcurrent of
PFC and/or inverter, output overvoltage, overtemperature and capacitive load operation
257
For more details on the product,
click on the part number.
Typical example of NFC lighting application
EVAL_NLM0011_DC – evaluation board demo kit
NFC-PWM configuration ICs
Dual-mode NFC wireless configuration ICs with CLO function and pulse width
modulation (PWM) output for lighting applications
The NLM0011 is a dual-mode NFC wireless configuration IC with PWM output. It is compatible with existing analog LED-
driver designs and with the NFC-programming specification from the Module-Driver Interface Special Interest Group
(MD-SIG). This device is primarily designed for LED applications to enable NFC programming. In addition, advanced
features such as the constant lumen output (CLO) as well as the on/o counting are integrated, and there is no need
for an additional microcontroller. Since the NLM0011 is designed to work together with mainstream analog driver ICs,
there are no firmware development eorts needed. It can be easily adapted into existing designs to replace the “plug-in
resistor” current configuration concept. The NLM0010 is a light version without CLO function.
This evaluation board not only enables fast demonstration of NFC-PWM
configuration ICs with NLM0011 through the NFC-PWM mobile app, but
also accelerates the development of the NFC-reader soware. EVAL_
NLM0011_DC does not require a full system, but allows NFC configuration
for existing LED driver boards.
Ordering code: EVALNLM0011DCTOBO1
www.infineon.com/NFC-PWM
Type Description Package Ordering code
NLM0011 Dual mode NFC configuration IC with PWM output and CLO function SOT23-5 NLM0011XTSA1
NLM0010 Dual mode NFC configuration IC with PWM output, without CLO function SOT23-5 NLM0010XTSA1
Current adjustable
LED driver IC
NLM0011
NLM0010
IADJ
ISET
ADIMM
R1
C1
VCC
CVCC
PWM
GND
VCCLA
LB
GND
Features and benefits
Key benefits
Configurable pulse width modulation (PWM) output
NFC contactless interface compliant to ISO/IEC 18000-3 mode 1 (ISO/IEC 15963)
Constant light output (CLO) with 8 configurable points
Integrated operation-time counter (OTC) and on/o counter
Non-volatile memory (NVM) including UID and 20 bytes free memory for user data
Key advantages
Fast and cost eective implementation of NFC programming and CLO without
the need of an additional microcontroller
Compatible with most analog LED driver designs using “plug-in resistor” method
Stable PWM output with fixed 2.8 V amplitude and +/-0.1% duty cycle accuracy
Internal voltage regulator (LDO) to avoid influence of instable external supply voltage
Lighting ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
258
For more details on the product,
click on the part number.
Lighting ICs
259
For more details on the product,
click on the part number.
Performance IPM
CIPOS™ IPM family
Control integrated power system (CIPOS™) intelligent power modules (IPM)
Key benefits
› Shorter time-to-market
› Increased reliability
› Reduced system design complexity
› Improved manufacturability
CIPOS™ product overview
Depending on the level of integration and power to be handled, Infineon oers a variety of IPMs, with dierent
semiconductors in dierent packages and dierent voltage and current classes.
CIPOS™ IPMs are families of highly integrated, compact power modules designed to drive motors in applications
ranging from home appliances to fans, pumps, and general purpose drives.
Infineon’s energy-eicient IPMs integrate the latest power semiconductor and control IC technology leveraging Infineon’s
advanced IGBTs, MOSFETs, next-generation gate driver ICs and state-of-the-art thermo-mechanical technology.
CIPOS™ Nano CIPOS™ Micro CIPOS™ Mini CIPOS™ Maxi
All MOSFET
40/100/250/500 V
250/500 V
MOSFET: 250/500 V
IGBT: 600 V, 3/4/6 A
IGBT: 600 V, 4-30 A
MOSFET: 600 V
IGBT: 1200 V, 5-10 A
7 x 8 x 0.9 mm
8 x 9 x 0.9 mm
12 x 12 x 0.9 mm 29 x 12 x 2.9 mm 36 x 21 x 3.1 mm 36 x 23 x 3.1 mm
Standard IPMCompact IPM
Motor current
0.1 Arms 20 Arms
www.infineon.com/ipm
Intelligent power modules
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
260
For more details on the product,
click on the part number.
Package overview
QFN 12x12
12 x 12 x 0.9 mm
QFN 8x9
8 x 9 x 0.9 mm
QFN 7x8
7 x 8 x 0.9 mm
www.infineon.com/ipm
CIPOS™ Nano is a family of highly integrated, ultracompact IPMs for high eiciency appliance and light industrial
applications including rectifiers, converters, inverters in power management circuits and motor drives for hair dryers,
air purifiers, ceiling fans, circulation pumps and ventilators. By utilizing an innovative packaging solution, these IPMs
delivers a new benchmark in device size, oering up to a 60 percent smaller footprint than existing three-phase motor
control power IPMs.
The family is comprised of a series of fully integrated three-phase or half-bridge surface-mount motor control circuit
solutions. The new alternative approach utilizes PCB copper traces to dissipate heat from the module, providing cost
savings through a smaller package design and even eliminating the need for an external heat sink.
CIPOS™ Nano
Three-phase or half-bridge driver with MOSFETs
Key applications
› Small home appliances
› Hair driers
› Air purifiers
› Fans
› Motor drives
› Battery management
› Water pumps
› CPAP
Features and benefits
Key benefits
Motor drive-optimized fast recovery FETs
Heat sink-less operation
Smallest modules on the market
Wide range of footprint compatible parts
Integrated bootstrap functionality
Untervoltage lockout for all channels
Key advantages
Cost savings from smaller footprint and reduced PCB space
Easy implementation of two or three-phase motor drives with half-bridge IPMs
IPMs distribute heat dissipation and enable elimination of heat sink
Same PCB footprint to address multiple application markets (100-230 VAC)
Intelligent power modules
261
For more details on the product,
click on the part number.
CIPOS™ Micro is a family of compact IPMs for low power motor drive applications including fans, pumps, air purifiers
and refrigerator compressor drives.
These IPMs oer cost-eective power solutions by leveraging industry standard footprints and processes compatible
with various PCB substrates. The advanced IPMs feature rugged and eicient high voltage MOSFETs and IGBTs
specifically optimized for variable frequency drives with voltage ratings of 250~600 V IGBTs. The IPMs oer DC current
ratings ranging up to 6 A to drive motors up to 100 W without heatsink and up to 300 W with heatsink, and are available
in both through-hole and surface mount package options.
CIPOS™ Micro
Solution for low power motor drive applications
Key applications
› Fan motors
› Low-power general purpose drives (GPI, servo drives)
› Pumps
› Blowers
› Active filter (active power factor correction) for HVAC
www.infineon.com/ipm
Features and benefits
Key features
Integrated bootstrap functionality
Undervoltage lockout for all channels
Matched propagation delay for all channels
Optimized dV/dt for loss and EMI trade-o
Advanced input filter with shoot-through protection
Separate low-side emitter pins for single- or leg-shunt current sensing
3.3 V logic compatible
UL certified NTC thermistor for temperature feedback available
Various lead forms available including through-hole and surface mounted
Key benefits
Ease of design and short time-to-market
Compact package with multi lead form options available
Wide range of current and voltage ratings in the same package
Wide range of modules for 110 VAC or 230 VAC applications in the same footprint
Lower losses than similar modules in the market
DIP 29x12
29 x 12 x 3.1 mm
DIP 29x12F
29 x 12 x 3.1 mm
SOP 29x12
29 x 12 x 3.1 mm
SOP 29x12F
29 x 12 x 3.1 mm
Package overview
Intelligent power modules
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
262
For more details on the product,
click on the part number.
DIP 36x21
36 x 21 x 3.1 mm
DIP 36x21D
36 x 21 x 3.1 mm
Key applications
› Home appliances
› Room air conditioners
› Motor control and drives
› Fan motors, pumps
www.infineon.com/ipm
CIPOS™ Mini is a family of high eicient intelligent power modules that has the highest power density with 4 A to 30
A rated product built into single package platform. It integrates various power and control components to increase
reliability, and optimize PCB size and system costs. Utilizing multiple configurations, CIPOS™ Mini IPMs are applicable
to the wide applications to control variable speed drives, such as air conditioners, washing machines, refrigerators,
vacuum cleaners, compressors, and industrial drives up to 3 kW. The configurations oered within the CIPOS™
Mini family are 2-phase MOSFET, 3-phase MOSFET and IGBT, integrated PFC, and 2-phase and 3-phase interleaved
PFC. All options include an integrated gate driver and built-in temperature sensor. CIPOS™ Mini provides optimized
performance for power applications, which need good thermal conduction and electrical isolation, but also EMI-safe
control, innovative fault indication, and overload protection. The feature of Infineon’s reverse conducting IGBTs or
TRENCHSTOP™ IGBTs are used with a new optimized Infineon SOI gate driver IC for excellent electrical performance.
CIPOS™ Mini
Broad range of configurations from PFC to inverter
Package overview
Features and benefits
Key features
Dual-in-line transfer molded package
Current rating from 4 A to 30 A, power rating up to 3 kW
Optimized for home appliances and motor drives
Rugged SOI gate driver IC technology
Advanced protection features
UL-certified
Key benefits
High integration (bootstrap circuit, thermistor) for easy design and system
space saving
Easy and fast platform design from small to large power
Enhanced robustness of the advanced IGBT and gate driver IC technology
High power density with compact form factor
Two kinds of substrates provide cost eicient solution for home appliances
Intelligent power modules
263
For more details on the product,
click on the part number.
DIP36x23D
36 x 22.7 x 3.1mm
CIPOS™ Maxi IPMs integrate various power and control components to increase reliability, optimize PCB size and
system costs. It is designed to control three-phase AC motors and permanent magnet motors in variable speed drives
applications, such as low-power motor drives, pumps, fan drives and active filters for HVAC (heating, ventilation, and
air conditioning). The existing portfolio oers 5 A and 10 A in 1200 V class up to 1.8 kW power rating. The smallest
package in 1200 V IPM class oers highest power density and best performance in its class.
IM818 is the first 1200 V IPM that integrated an optimized 6-channel SOI gate driver to provide built-in dead time that
prevents damage from transients. The product concept is especially adapted to power applications, which require
excellent thermal performance and electrical isolation as well as meeting EMI requirements and overload protection.
CIPOS™ Maxi
Solutions for high reliability and performance application
Package overview
www.infineon.com/ipm
Key applications
› Fan motors
› Low-power general purpose drives (GPI, servo drives)
› Pumps
› Active filter (active power factor correction) for HVAC
› HVAC outdoor fan
Features and benefits
Key benefits
Fully isolated dual in-line molded module with DCB
1200 V TRENCHSTOP™ IGBT 4
Rugged 1200 V SOI gate driver technology
Integrated booststrap functionality
Overcurrent shutdown
Undervoltage lockout at all channels
All of six switches turn-o during protection
Cross-conduction prevention
Programmable fault clear timing
Allowable negative VS potential up to -11 V for signal transmission at VBS of 15 V
Low side emitter pins accessible for all phase current monitoring (open emitter)
Key advantages
The smallest package size in 1200 V IPM class with high power density and best
performance
Enhanced robustness of gate driver technology for excellent protection
Adapted to high switching application with lower power loss
Simplified design and manufacturing
Intelligent power modules
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
264
For more details on the product,
click on the part number.
Intelligent power modules
CIPOS™ IPM product portfolio
www.infineon.com/ipm
MOSFET based CIPOS™ IPMs
Product family Voltage [V] Configuration RDS(on) max.
[]
Package Product name
CIPOS™ Nano 40 Half-bridge 0.05 QFN 7x8 IRSM005-800MH
100 Half-bridge 0.02 QFN 7x8 IRSM005-301MH
250 Half-bridge 0.15 QFN 8x9 IRSM808-204MH
3-phase inverter 0.45. ~ 2.20 QFN 12x12 IRSM836-084MA/IRSM836-044MA
IRSM836-024MA
500 Half-bridge 0.80/1.70 QFN 8x9 IRSM807-105MH/IRSM808-105MH
IRSM807-045MH
3-phase inverter 1.70 ~ 6.00 QFN 12x12 IRSM836-045MA/IRSM836-035MA/IRSM836-035MB
IRSM836-025MA/IRSM836-015MA
CIPOS™ Micro 250 3-phase inverter 2.40 DIP 29x12F IRSM5y5-024DA 1) *
2.40 SOP 29x12F IRSM5y5-024PA 1) *
500 1.30 ~ 6.00 DIP 29x12F IRSM5y5-065DA */IRSM5y5-055DA 1) *
IRSM5y5-035DA */IRSM5y5-025DA 1) *
IRSM5y5-015DA 1) *
1.30 ~ 6.00 SOP 29x12F IRSM5y5-065PA/IRSM5y5-055PA 1) *
IRSM5y5-035PA/IRSM5y5-025PA 1) *
IRSM5y5-015PA 1) *
CIPOS™ Mini 600 2/3-phase inverter 0.33 DIP 36x21 IM512-L6A/IM513-L6A
IGBT based CIPOS™ IPMs
Product family Voltage [V] Configuration Rated
current [A]
Package Product name
CIPOS™ Micro 600 3-phase inverter 3.0/4.0 DIP 29x12F
IM240-S6Y1B/IM240-S6Y2B
IM240-M6Y1B/IM240-M6Y2B
4.0/6.0 DIP 29x12
IM231-M6T2B/IM231-L6T2B
3.0/4.0 SOP 29x12F
IM240-S6Z1B
IM240-M6Z1B
4.0/6.0 SOP 29x12
IM231-M6S1B/IM231-L6S1B
CIPOS™ Mini 600 PFC integrated 10.0~20.0 DIP 36x21D
IFCM10S60GD/IFCM10P60GD
IFCM15S60GD/IFCM15P60GD
IM564-X6D
3-phase inverter 4.0 ~30.0 DIP 36x21
IGCM04F60GA/IGCM04G60GA
IGCM06F60GA/IGCM06G60GA
IGCM10F60GA/IKCM10H60GA/IKCM10L60GA
IGCM15F60GA/ICM15L60GA
*
/IKCM15F60GA/IKCM15H60GA
IGCM20F60GA/IKCM20L60GA
IKCM30F60GA
15.0 ~30.0 DIP 36x21D
IKCM15L60YD
*
/IKCM20L60YD
*
/IKCM30F60YA
2) *
650 3-phase interleaved PFC 20 DIP 36x21D
IFCM20T65GD/IFCM20U65GD
2-phase interleaved PFC 30 DIP 36x21D
IFC30T65GD
*
/IFCM30U65GD
CIPOS™ Maxi 1200 3-phase inverter 5.0/10.0 DIP 36x23D IM818-SCC/IM818-MCC
1) y = 0 (with NTC), y = 1 (without NTC)
2) y = G (with NTC), y = H (without NTC)
*For more information on the product, contact our product support
265
For more details on the product,
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www.infineon.com/motor-control-ics
iMOTION™ products for industrial and consumer motor control applications
iMOTION™ products are oered in several integration levels on both hardware as well as soware. The hardware
integration ranges from stand-alone motor controllers up to fully integrated inverters in the SmartIPMs. On soware
oering, Infineon is providing full turnkey solutions as well as freely programmable modules. Using the turnkey products
that are based on the patented and field proven motor control engine (MCE) and assisted by powerful tools like MCEwizard
and MCEdesigner the implementation of a variable speed drive is reduced to configuring the respective motor. Infineon
provides complete solution for motor control with its combined oering of iMOTION™ together with EiceDRIVER™ gate
drivers, TRENCHSTOP™ IGBTs, CoolMOS™ MOSFETs and CIPOS™ IPMs.
Intelligent motor control ICs
Power bridges for all kind of motors in automotive and industrial applications from 100 mA up to 70 A with dierent
feature sets scaled to your needs. Choose from our single and multi half-bridge ICs, integrated full-bridge drivers, servo
and stepper motor drivers or multi-MOSFET driver.
Automotive embedded power ICs (system-on-chip)
Infineon's embedded power ICs are specifically designed to enable mechatronic motor control solutions for a range
of motor control applications, where a small package form factor and a minimum number of external components are
essential, including but not limited to: window li, sunroof, wiper, fuel pump, HVAC fans, engine cooling fan, water
pumps. See more on embedded power solutions in Microcontroller section, pages 320-343.
Motor control ICs
Solutions for motor control systems in automotive,
consumer and industrial applications
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
266
For more details on the product,
click on the part number.
iMOTION™
Flexible and scalable platform for motor control solutions
iMOTION™ products integrate all required hardware and soware functions for the control of a variable speed
drive (VSD). Infineon’s field proven motion control engine (MCE) eliminates soware coding from the motor control
development process reducing the research and development eorts to the configuration for the respective motor.
The MCE implements highly eicient control of the motor and an optional power factor correction (PFC) and integrates
all necessary protections and a flexible scripting engine. Configuration options allow the use of single or leg shunt
current measurement as well as sensorless or hall-based field oriented control (FOC). Assisted by powerful tools like
MCEWizard and MCEDesigner it is possible to have the motor up and running in less than an hour. Integrated support for
functional safety for home appliances paves the way to meet regulations in the global market.
www.infineon.com/iMOTION
www.infineon.com/iMOTION-soware
M
IMC100T
Scripting
iMOTION™ motor controller iMOTION™ SmartIPM
IMC300A
Full 3-phase inverter system
controller, gate driver and MOSFETs
in compact 12x12 mm package up to ~80 W
IMM100A/IMM100T
Gate driver
IMC300 IMC100 3-phase inverter
ARM®
Cortex®-M0
(IMC300)
› MCE supervision
› Sensors
› Communication
› Custom functions
› Motor control
› PFC control
› Protection
› Safety functions
Motion control
engine
(MCE)
iMOTION™
M
Gate driver 3-phase inverter
› Motor control
› PFC control
› Protection
› Safety function
Motion control
engine
(MCE)
Motion control engine (MCE)
motor + PFC control,
protection, integrated scripting engine
MCE + additional MCU
additional MCU available for
system/application code
Scripting
PC tools and evaluation kits are available to configure,
test and fine-tune the drive inverter.
MCEWizard
SW tool to generate initial drive control parameters
MCEDesigner
SW tool to test, monitor and fine-tune the motor drive
– including trace features for live monitoring
iMOTION™ Link
Isolated debug interface to iMOTION™ devices
Features and benefits
Key features
Ready-to-use and field-proven motor control solution
Multiple integrated protection features
Functional safety acc. IEC/UL 60730 supported
Scalable - from motor to scripting, PFC and additional MCU
Various integration levels - from motor controller to SmartIPM
iMOTION™ controller – run with any gate driver and power stage
iMOTION™ SmartIPM – highest integration level
Key benefits
Fastest time to market
Easy to use – no motor control coding required
High performance and energy-optimized solution
Reduced cost of ownership due to R&D savings
Easy adaptation to diering application requirements
Highest flexibility for low or high voltage drives
Reduced system cost due to minimum BOM count and PCB size
Motor control ICs
267
For more details on the product,
click on the part number.
M1
M3
iMOTION™ Modular Application Design Kit
Infineon‘s motor control evaluation platform
Get a motor running in less than 1 hour!
The iMOTION™ Modular Application Design Kit (MADK) evaluation platform targets variable speed-drive applications up
to 2kW. The platform oers a modular and scalable system solution with dierent control board options and a wide
range of power boards. While the M1 platform provides control of a permanent magnet synchronous motor (PMSM),
the M3 platform additionally includes the power factor correction (PFC) implemented as a CCM boost PFC.
Using the iMOTION™ MADK standardized platform interfaces, dierent control and power boards can be combined in a
system that perfectly meets the requirements of the application. This modular approach allows developers maximum
flexibility and scalability during evaluation and development phase at aordable costs.
Further information, datasheets and documents
www.infineon.com/MADK
For technical assistance
www.infineon.com/support
Motor control boards
Motor + PFC control boards
Wide range of power boards
Power boards with PFC
EVAL-M1-101T
IMC101T-T038
Control card
EVAL-M3-102T
IMC102T-F064
Control card
EVAL-M1-36-84A
CIPOS™ Nano-power board
IRSM836-084MA ~110V/80W
EVAL-M3-CM615PN
CIPOS ™ mini with boost PFC
IFCM15S60GD ~220V/650W
EVAL-M1-CM610N3
CIPOS™ Mini-power board
IKCM10H60GA ~220V/750W
EVAL-M3-IM564
CIPOS ™ mini with boost PFC
IM564-X6D ~220V/2000W
EVAL-M1-IM818-A
CIPOS™-Maxi power board
IM818-MCC ~380V/1500W
EVAL-M1-099M-C
IRMCK099
Control card
EVAL-M3-302F
IMC302A-F064
Control card
EVAL-M1-101TF
IMC101T-F048
Control card
Motor control ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
268
For more details on the product,
click on the part number.
Motor control ICs
Single half-bridge IC
Protected high current half-bridge for use in automotive and industrial applications
The NovalithIC™ provides a complete, low-ohmic protected half-bridge in a single package (typ. path resistance at 25°C
down to 10 mΩ). It can also be combined with an additional NovalithIC™ to create a H-bridge or three-phase bridge.
The NovalithIC™ family has the capability to switch high-frequency PWM while providing overcurrent, overvoltage and
overtemperature protection. The NovalithIC™ family oers cost-optimized, scalable solutions for protected high-current
PWM motor drives with very restrictive board space. Due to the P-channel high-side switch the need for a charge pump
is eliminated thus minimizing EMI. The latest addition to the NovalithIC™ family is the IFX007T, which is optimized for
industrial applications.
Features
Basic features
Low quiescent current
Capable for high PWM frequency
Logic level input
Adjustable slew rate
Cross-current protection
Protection features
Overtemperature shutdown
Overvoltage shutdown
Undervoltage
Overcurrent
Diagnostic features
Overtemperature
Overvoltage
Current sense and status
Application example for high-current PWM motor drives
IFX007T
VSVS
GND
OUT
GND
OUT
SR
IS
IN
INH
SR
IS
IN
INH
I/OI/OI/OI/OI/O
Reset
I/O I
VDD
VSS
WO
RO
Q
D
GND
Microcontroller Voltage
regulator
Reverse polarity
protection
IFX007T
M
VS
High current H-bridge
Product
number
Operating
range
[V]
RDS(on) path
(typ.)
[m]
ID(lim) (typ.)
[A]
Iq (typ.)
[A]
Switch time
(typ.)
[s]
Diagnosis Protection Package Qualification
IFX007T 5.5 ... 40.0 10.0 70 7 0.25 OT, OC, CS UV, OT, OC PG-TO-263-7 JESD471
CS = Current sense OC = Overcurrent OT = Overtemperature UV = Undervoltage
www.infineon.com/novalithic
269
For more details on the product,
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Features
Key features
Capable of high frequency PWM, e.g. 30 kHz
Adjustable slew rates for optimized EMI by changing external resistor
Driver circuit with logic level inputs
Diagnosis with current sense
www.infineon.com/shields-for-arduino
www.infineon.com/makers
www.infineon.com/novalithIC
DC motor control shield with IFX007T for Arduino
The BLDC motor control shield is a high current motor control board compatible with Arduino and Infineon’s XMC4700
Boot Kit. It is equipped with three smart IFX007T half-bridges. The BLDC motor control shield is capable to drive one
BLDC motor. Alternatively, it can be used to drive one or two bidirectional DC motors (H-Bridge configuration, cascaded
to support second motor) or up to three unidirectional DC motors (half-bridge configuration). The implemented inte-
grated NovalithIC™ IFX007T half-bridges can be controlled by a PWM via the IN-pin.
BLDC-SHIELD_IFX007T
DC motor control with half-bridge IFX007T
Infineon's shields for Arduino are compatible with
microcontroller boards using the Arduino-compatible
form factor, e.g. Infineon's XMC™ microcontroller kits.
Ordering code: BLDCSHIELDIFX007TTOBO1
Target applications
› Brushed DC motor control up to 250 W continuous load
› 24 V nominal input voltage (max. 6 V–40 V)
› Average motor current 30 A restricted due to PCB (IFX007T current limitation @ 55 A min.)
Motor control ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
270
For more details on the product,
click on the part number.
Motor control ICs
Multi half-bridge ICs
Extensive oering ranging from two-fold half-bridge ICs to twelve-fold half-bridge ICs
The TLE94xyz are protected half-bridge drivers designed for 12 V motion control applications such as small DC motors
for heating, ventilation and air conditioning (HVAC), as well as automotive mirror adjustment and fold. The family
oers three-, four-, six-, eight-, ten-, and twelve-fold integrated half-bridge driver. All devices can drive DC motor
loads up to 0.9 A per output or the outputs can be used stand-alone or combined to increase driving capability up
to 3.6 A. They provide diagnosis of short circuit, open load, power supply failure and overtemperature for each half-
bridge to ensure safe operation in HVAC or other systems. The TLE94xyz oers enhanced EMC performance, which in
combination with the low quiescent current and a small package makes the product attractive for a wide range of 12 V
automotive and industrial applications.
Overload
detection
Overtemp.
detection
Open-load
detection
PWM
generator
Charge pump
Undervoltage and
overvoltage monitor
Overload
detection
Overtemp.
detection
Open-load
detection
Temperature
sensor
Logic control and
latch SPI interface
Error
detection
V
DD
V
S1
V
S2
CSN
GND GND GND GND
EN
12-fold
half-bridge driver
SPI interface
SCLK
SDI
SDO
Power driver
OUT3
OUT2
OUT1
12x
driver
stage
High-side
driver
Low-side
driver
OUT4
OUT5
OUT6
OUT9
OUT8
OUT7
OUT10
OUT11
OUT12
Bias and
monitor
Block diagram TLE94112ELInfineon's portfolio of multi half-bridge ICs
www.infineon.com/multihalfbridges
Key applications
› 12 V automotive and industrial applications
› Flap motors in HVAC systems
› Mirror adjustment and fold
› Small DC motors (≤ 0.9 A/output)
› Bistable relays
› Bipolar stepper motors in full-step and
half-step mode
Features and benefits
Microcontroller
Interface
Direct
interface SPI
Number of motors
1 Motor
TLE4207G
DSO-14
TLE94003EP
TSDSO-14
TLE94004EP
TSDSO-14
TLE94104EP
TSDSO-14
TLE8444SL
SSOP-24
TLE94103EP
TSDSO-14
TLE94106ES
TSDSO-14
TLE94108EL
SSOP-24
TLE94110EL
SSOP-24
TLE94112EL
SSOP-24
2 Motors 2 Motors 3 Motors 4 Motors 5 Motors 6 Motors
Number of motors
Key features and benefits
Three-, four-, six-, eight-, ten-, and twelve-fold half-bridges with integrated output stages and PWM
16-bit SPI or direct inputs for control and diagnosis
Voltage supply range: 5.5– 20 V
Adjustable open load threshold for two outputs
Variable driving schemes for up to
271
For more details on the product,
click on the part number.
Product
name
Config. IL(NOM)
[A]
IL(lim)
[A]
Iq
[A]
VS(OP)
[V]
Protection Diagnostic
interface
Highlights VCE(sat)/
RDS(on)
[m]
Package
TLE94003EP
3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5 to 20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept + small package
850/switch
TSDSO-14-EP
TLE94103EP
3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + small package TSDSO-14-EP
TLE94004EP
4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5 to 20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept + small package TSDSO-14-EP
TLE94104EP
4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + small package TSDSO-14-EP
TLE94106ES 6 x half-bridge 6 x 0.30 6 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI
TLE94xyz family concept + backwards compatible to TLE84106EL
TSDSO-24
TLE94108EL 8 x half-bridge 8 x 0.30 8 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept SSOP-24
TLE94110EL 10 x half-bridge 10 x 0.30 10 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI
TLE94xyz family concept + backwards compatible to TLE84110
SSOP-24
TLE94112EL 12 x half-bridge 12 x 0.30 12 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + 12 outputs in one package SSOP-24
TLE4207G 2 x half-bridge 2 x 0.80 2 x 1.50 20 8 to 18 OC, OT, VS, UV/OV Status flag Error detection DSO-14
TLE8444SL 4 x half-bridge 4 x 0.50 4 x 0.90 1 8 to 18 OC, OT, OL, VS, UV/OV Status flag Open-load detection in ON-state SSOP-24
OC = Overcurrent OT = Overtemperature OL = Openload UV = Undervoltage OV = Overvoltage
www.infineon.com/shields-for-arduino
www.infineon.com/makers
DC motor shield with TLE94112EL for Arduino
The DC motor shield is a small evaluation board equipped withTLE94112EL for use with Arduino. The TLE94112EL is
capable to drive up to 6 small DC motors in parallel mode or up to 11 DC motors in cascaded mode. All outputs can
drive up to 0.9 A. The outputs can be used stand-alone or combined to increase driving capability up to 3.6 A.
Features
Key features
Driver with 12 half-bridge outputs to drive DC motors, resistive or inductive loads
Driver is protected against overtemperature, overcurrent, overvoltage,
undervoltage and enables diagnosis of overcurrent, overvoltage, undervoltage
SPI interface with zero clock diagnosis
Enhanced EMC performance
Integrated PWM generator with three dierent frequencies (80 Hz, 100 Hz, 200 Hz)
Target applications
› Multi-motor applications
› DC motors and voltage controlled bipolar stepper motors
› Toys
› HVAC systems
Motor control ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
272
For more details on the product,
click on the part number.
Motor control ICs
Integrated full-bridge driver
General purpose 6 A H-bridges
IFX9201SG and IFX9202ED are general purpose 6 A H-bridges designed for the control of small DC motors and inductive
loads. The outputs can be pulse width modulated at frequencies up to 20 kHz, which enables operation above the
human sonic range by means of PWM/DIR control. While the signal at the DIR input defines the direction of the DC
motor, the PWM signal controls the duty cycle. For load currents above the current limitation threshold (8 A typically),
the H-bridges switch into chopper current limitation mode.
Application example H-bridge
with error flag
SO
GND
Microcontroller
IFX9201SG
SI
SCK
CSN
DIR
PWM
DIS
VSO
VS
OUT1
OUT2
3.3 or 5 V
Digital supply
VBat
< 33 nF
100 nF100 µFVS < 40 V
< 33 nF
M
+
–
+
–
+
–
+
–
PWM_2
XMC1300
PWM_1
Step
2-phase
stepper motor
Direction (DIR)
Disable (DIS) IFX9202ED
PWM_1
PWM_2 OUT2_2
OUT2_1
OUT1_2
OUT1_1
GND GND
Application example H-bridge
with SPI interface
SO
GND
Microcontroller
SI
SCK
CSN
DIR
PWM
DIS
VSO
VS
OUT1
OUT2
VBat
M
< 33 nF
100 nF100 µFVS < 40 V
< 33 nF
3.3 or 5 V
Digital supply IFX9201SG
+
–
+
–
+
–
+
–
PWM_2
IFX9201
XMC1300
IFX9201
PWM_1
Step
2-phase
stepper motor
Direction (DIR)
Disable (DIS)
Applications examples
www.infineon.com/dc-motor-bridges
*For more information on the product, contact our product support
Product number Operating
voltage
Current limit
(min.) [A]
Quiescent current
(typ.) [A]
Operating range
[V]
RDS(on) (typ./switch)
[m]
Package RthJC (max.)
[K/W]
IFX9201SG 4.5 to 36 V 6.0 10.0 70 7 PG-DSO-12 (power) 2.0
IFX9202SG * 4.5 to 36 V 2 x 6.0 A 19.0 5 to 36 2 x 100 DSO-36 2 x 0.5
Features
Key features
Up to nominal 36 V supply voltage
Short circuit, overtemperature protection and undervoltage shutdown
Detailed SPI diagnosis or simple error flag
Simple design with few external components
Small and robust DSO-12-17 (IFX9201SG) and DSO-36-72 (IFX9202ED) packages
273
For more details on the product,
click on the part number.
www.infineon.com/dc-motor-bridges
H-BRIDGE KIT 2GO with IFX9201SG
Build your own DC motor control with the H-bridge Kit 2GO, a ready-to-use evaluation kit. It is fully populated with all
electronic components equipped with the H-bridge IFX9201 combined with XMC1100 microcontroller based on
Arm® Cortex®-M0 CPU. It is designed for the control of DC motors or other inductive loads up to 6 A or up to 36 V of supply.
Target applications
› DC motor control for industrial applications
› Home and building automation
› Power tools battery management
› Industrial robotic applications
› Electric toys applications
Ordering code: HBRIDGEKIT2GOTOBO1
KIT_XMC1300_IFX9201
Stepper motor control shield with IFX9201SG and XMC1300 for Arduino
The stepper motor control shield from Infineon is one of the first high current stepper motor control boards being
compatible to Arduino as well as to Infineon’s XMC1100 boot kit. The stepper motor control shield is
capable to drive the two coils in a stepper motors featuring dual-half bridge configuration. The implemented
integrated IFX9201 half-bridges can be controlled by a STEP-signal via the STEP pin. Interfacing to a microcontroller is
made easy by the integrated XMC1300 microcontroller that holds the peripherals to allow high-speed current control.
Microstepping of the stepper motor can be achieved using the internal comparators, while operational amplifiers are
installed to adapt the motor current sense signal to the microcontroller’s input levels.
Target applications
› Stepper motors up to 5 A phase current
› 24 V nominal input voltage for the power stage
› Average motor current 3 A without additional
cooling eort, 5 A possible with proper cooling
Ordering code: KITXMC1300IFX9201TOBO1
Features and benefits
Key features
Compatible with microcontroller boards using the Arduino form factor, e.g.
Infineon's XMC™ microcontroller kits
Capable of high frequency PWM, e.g. 30 kHz
Adjustable slew rates for optimized EMI by changing external resistor
Driver circuit with logic level inputs
Diagnosis with current sense
Key benefits
Fast and inexpensive prototyping of stepper motor control
Simple testing of microstepping algorithms
Diagnose pin to allow hardware feedback during development
Overtemperature shutdown with latch behavior and undervoltage shutdown
of the power section
Motor control ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
274
For more details on the product,
click on the part number.
Motor control ICs
www.infineon.com/dc-motor-bridges
Stepper motor driver
Cost-eicient, durable and reliable
The TLE8444SL is a protected quad-half-bridge IC targeted towards automotive and industrial motion control applica-
tions. It is a monolithic die based on Infineon’s smart mixed technology SPT which combines bipolar and CMOS control
circuitry with DMOS power devices. DC Motors can be driven in forward (cw), reverse (ccw), brake and high impedance
modes where as stepper motors can be driven in no-current, negative/positive output current modes. These various
modes can easily be achieved via standard parallel interface of the device to a microcontroller. The PG-SSOP-24-7 pack-
age is advantageous as it saves PCB board space and costs. The integrated short circuit and overtemperature protection
as well as its built-in diagnosis features such as over- and undervoltage lockout and open load detection improve system
reliability and performance.
Applications
› Unipolar or bipolar loads
› Stepper motors in automotive and industrial
applications (e.g. idle speed control for small
cars or motor bike)
Product
number
IL(NOM) IL(lim) Iq
[A]
VS(op) Step
operations
Protection Diagnostic
interface
Highlights Package
TLE8444SL 4x0.50 4x0.90 1 1–18 Full to half-step SC, OT, OV, UV, OL Status flag Open-load detection in
on-state
SSOP-24-7
CS = Current sense OC = Overcurrent OT = Overtemperature SC = Short circuit UV = Undervoltage OL = Open-load
Features
Benefits
Suited for fast switching applications (PWM capability up to 10kHz)
Easy failure detection
Low impact on battery lifetime
Implementation of thermal shutdown extends IC lifetime
Allows motor peak currents up to 0.9a
Broken wire connections easily detected
Designed for automotive and industrial applications
275
For more details on the product,
click on the part number.
Further information, datasheets and documents
www.infineon.com/acdc
www.infineon.com/coolset
www.infineon.com/integrated-powerstages
www.infineon.com/digital-controller
www.infineon.com/lighting-ics
www.infineon.com/isoface
www.infineon.com/eicedriver
www.infineon.com/industrial-transceivers
www.infineon.com/industrial-voltage-regulators
www.infineon.com/industrial-DC-DC-converters
www.infineon.com/industrial-profet
www.infineon.com/novalithic
www.infineon.com/dc-motor-bridges
www.infineon.com/shields-for-arduino
www.infineon.com/ipol
www.infineon.com/analog-ipol
www.infineon.com/xdp
www.infineon.com/ipm
www.infineon.com/madk
Infineon support for power ICs
Useful links and helpful information
Simulation
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
276
For more details on the product,
click on the part number.
› ISOFACE™ isolated industrial interface
› HITFET™ protected low-side switches
› Industrial PROFET™ protected high-side switches
› Infineon support for intelligent switches and input ICs
Intelligent power switches
and modules
277
For more details on the product,
click on the part number.
Intelligent power switches
and modules
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
278
For more details on the product,
click on the part number.
ISOFACE™ isolated industrial interface
Output switches and digital input ICs oering unmatched system uptime,
reliability and shortened product launch time by 50%
ISOFACE™ galvanic-isolated 8-channel output switches
Our ISOFACE™ product family provides robust and intelligent galvanic isolation for industrial control applications
such as programmable logic controllers, sensor input modules, control panels and general control equipment. The
output switches are compact in design, enabling robust and reliable operation at low system cost. Ideal for high-speed
applications, digital input ICs are equally robust, reliable and compact – also oering superior EMI robustness and
setting a new standard in diagnostics.
The ISO1H81xG product family integrates:
› Robust galvanic isolation (UL508 and EN 61131-2 certified) to protect the 3.3 V/5 V control domain of an industrial
control system from the harsh 24 V process side
› 8-channel high-side power-switching capabilities of up to 1.2 A per channel
› Active current limitation and overtemperature protection
› Common diagnostic feedback for overtemperature and for Vbb undervoltage
Isolated output switch block diagram
Control
and
protection
unit
Control
unit
Microcontroller
i.e.
XMC1xxx
XMC4xxx
Logic
Transmission
Transmission
Parallel or
serial
interface
V
bb
V
CC
VCC
DIAG
GND
Vbb
VCC
OUT0
DIS
CS
WR
D0
D7
DIAG
GNDCC GNDBB
OUT1
OUT7
ISO1H81xG
www.infineon.com/isoface
Isolated output switches
Key benefits
Robust and reliable
Compact system solution
Lower system cost
System status feedback
Directly interfacing with all MPUs and MCUs
Key features
Integrated galvanic isolation (500 V)
Eight channels (0.6 or 1.2 A, each)
Inductive load switching
Diagnostic feedback (overtemperature, overload)
Serial and parallel MCU interface
Features and benefits
ISOFACE™
279
For more details on the product,
click on the part number.
ISOFACE™ galvanic-isolated digital input ICs
The ISO1I81xT digital input IC family is an intelligent system solution oering robust galvanic isolation between the
microcontroller on the “control side” and the 24 V factory floor environment, frequently referred to as the process side.
Digital input switch block diagram
Featured products
› XMC4800-E196K2048 -Arm® Cortex®-M4 microcontroller
› ISO2H823V2.5- 24 V 8-channel isolated output
› ISO1I813T - 24 V 8-channel isolated input
› SLS 32AIA020A4 USON10 - OPTIGA™ Trust E – embedded security solution
› TLE6250GV33 - Infineon CAN transceiver
› IFX54441LDV - Infineon voltage regulator
Key features
› Complete automation kit gateway
› Combined MCU with EtherCAT® slave application
› Isolated interfaces w/ diagnose
› Ethernet connectivity with soware examples available
› Full soware DAVE™ examples
Digital
filter
Digital
filter
Serialize
Logic
Deserialize
Micro-
controller
e.g.
XE166
Parallel
or serial
interface
VFI
IN7
8 sensors
IN0 2 kΩ
330 nF
12 kΩ
GNDFI
I0H ERR
CS
Sync
GND
DC
ENA
I0L
TS
SW1SW2
Vbb VCC
WB
I7H
I7L
GNDBB
ISO1I813T
2 kΩ
12 kΩ
www.infineon.com/isoface
XMC4800 automation board V2
Orderable part number:
KITXMC48AUTBASEV2TOBO1
Galvanic-isolated digital input ICs
Key benefits
Robust and reliable
Compact system solution
High-speed applications
Superior EMI robustness
System status feedback
Valuable maintenance support
Key features
Integrated galvanic isolation (500 V)
Eight channels (IEC type 1/2/3)
Up to 500 kHz sampling speed
Programmable input filters
Channel-specific diagnostics (wire-break, undervoltage)
Features and benefits
ISOFACE™
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
280
For more details on the product,
click on the part number.
Product overview ISO1H801G ISO1H811G ISO1H812G ISO1H815G ISO1H816G
Switch
Vbb operational range: 11 V to 35 V ✓✓✓✓✓
Max. continuous load current per channel 0.6 A 0.6 A 0.6 A 1.2 A 1.2 A
Load current increase by using outputs in
parallel
✓✓✓✓✓
Inductive clamping energy per channel: 1 Joule ✓✓✓✓✓
Microcontroller
interface
Type Parallel Parallel Serial Parallel Serial
Nominal voltages 5 V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V
Safety features
Isolation voltage: VISO = 500V
UL508 and EN 61131-2 certified
✓✓✓✓✓
Active current limitation ✓✓✓✓✓
Thermal shutdown ✓✓✓✓✓
Common output disable pin ✓✓✓✓✓
Diagnostics
feedback
Overtemperature ✓✓✓✓
Vbb undervoltage ✓✓✓✓
Package DSO-36 (16x14 mm) ✓✓✓✓✓
Ordering code
ISO1H801GAUMA1 ISO1H811GAUMA1 ISO1H812GAUMA1 ISO1H815GAUMA1 ISO1H816GAUMA1
Product overview ISO1I811T ISO1I813T
Input characteristics IEC type: I, II, III ✓ ✓
Input status LED ✓ ✓
Max. sampling frequency 125 kHz 500 kHz
Deglitching filter setting Hard wired Soware, individual per channel
Synchronous data acquisition – ✓
µC interface 3.3 V/5 V ✓ ✓
Serial and parallel ✓ ✓
Safety features 500V isolation voltage ✓ ✓
Wire break, channel-specific – ✓
Vbb undervoltage – ✓
Support for external Vbb supply – ✓
Package TSSOP-48 (8x12.5 mm) ✓ ✓
Ordering code ISO1I811TXUMA1 ISO1I813TXUMA1
ISOFACE™ output switches
ISOFACE™ digital input IC
www.infineon.com/isoface
ISOFACE™ product portfolio
ISOFACE™ product portfolio
281
For more details on the product,
click on the part number.
HITFET™
Protected low-side switches
HITFET™ stands for highly-integrated temperature-protected MOSFET. These well-established low-side switches oer
a compelling feature set with protection against overtemperature, short circuit and overload conditions as well as
ESD robustness. The HITFET™+ family is the new generation based on a new technology, enabling a significant shrink
compared to the existing HITFET™ portfolio (up to 50 percent shrink). This novel generation consists of standard and
fully-featured protected low-side switches (11 to 125 mΩ) in the TO-252-3 DPAK/TO-252-5 DPAK and TDSO-8 packages.
HITFET™ and HITFET™+ devices address a wide range of applications including resistive, inductive and resistive loads.
Key applications
› Industrial automation *
› Programmable logic controller (PLC) * *
› Digital I/O modules
› Building and home management
› All kind of solenoid or valve driving
› Power modules
› Solar power inverters
Application diagramm example for HITFET™
www.infineon.com/hitfet
www.infineon.com/shields-for-arduino
*See block diagram on page 278
* * See block diagram on page 279
OUT
GND
STATUS
SRP
IN
ENABLE
VDD
Load
OUTPUT (PWM)
INPUT (feedback)/
OUTPUT (reset)
OUTPUT
OUT
Microcontroller
BTF3xxxEJ
GND
VDD
V
Batt
IN
RSTATUS
RSRP
CVDD2)
CSRP1)
Voltage
regulator
5 V
1)
CSRP-GND < 100 pF – maximum permittet parasitic capacitance at the SRP-pin
2) Filter capacitor on supply, recommended 100 nF
V
ehicle
CAN bus
Key benefits
High design flexibility with scalable RDS(on) and package
Driving applications with high switching speed requirements up to 25 kHz
(e.g. valve, solenoid)
Easy to design-in
Choice of packages to match individual application needs
Key features
Low-side switches with integrated protection features
Scalable in RDS(on) ranges from 490 mΩ down to 11 mΩ
Adjustable slew rate control (BTFxxx)
Thermal shutdown with auto restart or latch behavior
Status feedback via
› Increased input current (HITFET™ 2nd gen.)
› Digital readout via SRP (BTF3050TE)
› Via status pin (BTF3xxxEJ)
Features and benefits
Featured products: Three BTF3050TE low-side switches of the HITFET™+ family
Combatible with: Microcontroller boards using the Arduino form factor and the
corresponding Infineon’s kits with Arm® powered XMC™ microcontroller
Orderable part number: SHIELDBTF3050TETOBO1
Featured products: One single-channel low-side switch of BTT3018EJ
Combatible with: Can be used as single stand and is also pin-compatible with
microcontroller boards using the Arduino form factor (e.g. XMC1100 Boot Kit, Arduino Uno)
Orderable part number: BTT3018EJDEMOBOARDTOBO1
Low-side switch shield with BTF3050TE for Arduino
BTT3018EJ DEMOBOARD
Low-side switches
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
282
For more details on the product,
click on the part number.
Industrial PROFET™
Protected high-side switches
The well-established high-side switch Industrial PROFET™ products were designed for targeting a variety of industrial
applications which include all types of resistive, inductive and capacitive loads. Due to their outstanding energy
robustness, they are perfectly suitable for switching even higher inductive loads and driving relays. Their main
application areas include high-voltage applications (VBAT up to 60 V), high-speed PWM applications (up to 1 kHz) and
they are most notably capable of switching higher inductances smoothly. Industrial PROFET™ can be applied to drive
any kind of sensor units, indicators, displays, LEDs, relays, valves and magnetic actuators or replace electromechanical
relays, fuses and discrete circuits. Industrial PROFET™ products are also the perfect match for applications with long
wiring or any other kind of inductive loads or applications with space constraints.
www.infineon.com/industrial-profet
PLC – programmable logic controller digital output modules
Protection
diagnosis
Isolation
Protection
diagnosis
Multichannel
switch
Switch
Switch
Load 1
Load 2
Microcontroller
or
bus ASIC
Industrial PROFET™
Protected high-side
switches
Load 3
Load 4
Field levelControl level
Key applications
› Industrial automation
› Programmable logic controller (PLC)
› Digital I/O modules
› Robotics
› Building and home automation
› Solar applications
› Wind energy systems
› Smart grid
› Motor control and drives
› Power supplies
PROFET™ as actuators typically address
I/O modules supplying nominal
currents of 2 A or 0.5 A. However
PROFET ™ portfolio as well provides
devices also for lower and higher
currents. PROFET ™ parts are suitable
for switching resistive, capacitive and,
by featuring high EAS, inductive loads.
Corresponding PROFET™
evaluation boards are
available on request.
PROFET™ typical block diagram
Key benefits
Small system form factor
No/little downtime of system in operation
Low heating up of a system
System cost saving by built-in protection and tailored featureset
Reduced system maintenance eorts by providing optimized diagnostics
Key features
Right fit for digital output switches, motor or robot control, protected switching
of decentralized loads like sensors or auxiliary supply
Outstanding robustness and reliability as required by industrial mission profiles
Thermally optimized products with low RDS(on) to deal with the high ambient
temperatures and limited or even no cooling
Diagnosis and protection for safe system operation
Small and compact design for higher integration and applications with space
constraints
Features and benefits
GND
IN
Bias
supervision
ESD
protection
Logic
Overvoltage
protection
Current
limiter
Gate
control
circuit
Temperature
sensore
ST
OUT
VS
High-side switches
283
For more details on the product,
click on the part number.
www.infineon.com/industrial-profet
Load current
Typical, per channel
1-channel
2-channel
4-channel
8-channel
7 A ITS428L2
7 A, 60 mΩ, TO-252-5
3 A ITS4060S-SJ-N, ISP772T
3.1 A, 60 mΩ
DSO-8
2 A … 3 A ITS4100S-SJ-N, ISP762T
2.4 A, 100 mΩ, DSO-8
1 A … 2 A ITS4200S-ME-P, ITS4142N
1.4 A, 200 mΩ, SOT223
ITS4040D-EP-D
2.6 A, 40 mΩ, TSDSO14
ITS4075Q-EP-D
2.6 A, 75 mΩ, TSDSO14
ISP752T
1.3 A, 200 mΩ, DSO-8
ITS5215L
2 A, 90 mΩ, DSO-12
ITS724G
2 A, 90 mΩ, DSO-20
ITS4200S-SJ-D, ISP752R
1.2 A, 200 mΩ, DSO-8
ITS716G
1 A, 140 mΩ, DSO-20
ITS711L1
1 A, 200 mΩ, DSO-20
0.5 A … 1 A ITS4200S-ME-N, ISP452
0.7 A, 200 mΩ, SOT223
ITS4090Q-EP-D
0.7 A, 90 mΩ, TSDSO14
ITS42008-SB-D, ITS4880R
0.6 A, 200 mΩ, DSO-36
ITS4200S-ME-O, ITS4141N
0.7 A, 200 mΩ, SOT223
ITS4130Q-EP-D
0.65 A, 130 mΩ, TSDSO14
ITS4141D
0.5 A, 200 mΩ, TO-252-5
< 0.5 A ITS4300S-SJ-D, ISP742RI
0.4 A, 300 mΩ, DSO-8
ITS42K5D-LD-F
0.25 A, 2.5Ω, TSON-10
ITS41k0S-ME-N, ITS4140N
0.2 A, 1Ω, SOT223
= With diagnosis
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
284
For more details on the product,
click on the part number.
HITFET™ and PROFET™ portfolio
Product type Product
family
Channels RDS(on)
@ 25°C
[mW]
Nominal load
current
[A]
EAS
[mJ]
Operating
voltage range
[V]
IL(SD)
(typ)
[A]
IL(lim)
(typ)
[A]
IL(lim)_TRIG-
GER
(typ)
[A]
Diagnosis Package
BTS3011TE HITFET™+ 1 10.7 10 300 @ 5 A up to 28 – 35 70
Status pin
TO-252-5 (DPAK 5-leg)
BTT3018EJ HITFET™+ 1 16 7.0 150 up to 36 – 45 –
Status pin
TDSO-8
BTS3035EJ HITFET™+ 1 28 5.00 105 @ 5 A up to 31 – 20.00 –
Status pin
TDSO-8
BTS3035TF HITFET™+ 1 30 5.00 106 @ 5 A up to 31 – 20.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3035EJ HITFET™+ 1 28 5.00 95 @ 5 A up to 32 – 14.00 41.00
Status pin
TDSO-8
BTF3050TE HITFET™+ 1 40 3.00 120 @ 3 A up to 28 – 8.00 30.00
Through SRP pin
TO-252-5 (DPAK 5-leg)
BTS3050EJ HITFET™+ 1 40 4.00 62 @ 3 A up to 31 – 15.00 –
Status pin
TDSO-8
BTS3050TF HITFET™+ 1 44 4.00 64 @ 4 A up to 31 – 15.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3050EJ HITFET™+ 1 40 4.00 62 @ 4 A up to 32 – 10.00 29.00
Status pin
TDSO-8
BTS3060TF HITFET™+ 1 50 3.00 55 @ 3 A up to 35 – 10.50 –
–
TO-252-3 (DPAK 3-leg)
BTS3080EJ HITFET™+ 1 64 3.00 35 @ 3 A up to 31 – 10.00 –
Status pin
TDSO-8
BTS3080TF HITFET™+ 1 69 3.00 38 @ 3 A up to 31 – 10.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3080EJ HITFET™+ 1 64 3.00 33 @ 3 A up to 32 – 7.00 18.00
Status pin
TDSO-8
BTS3125EJ HITFET™+ 1 100 2.00 30 @ 2 A up to 31 – 7.00 –
Status pin
TDSO-8
BTS3125TF HITFET™+ 1 108 2.00 24 @ 2 A up to 31 – 7.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3125EJ HITFET™+ 1 100 2.00 23 @ 2 A up to 32 – 5.00 12.00
Status pin
TDSO-8
BTS3018TC HITFET™ 1 14 6.00 1900 up to 36 – 30.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS141TC HITFET™ 1 25 5.10 4000 up to 36 – 25.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3028SDL HITFET™ 1 28 5.00 350 up to 36 – 18.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3028SDR HITFET™ 1 28 5.00 350 up to 36 – 18.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS133TC HITFET™ 1 40 3.80 2000 up to 36 – 21.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3046SDL HITFET™ 1 46 3.60 140 up to 36 – 10.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3046SDR HITFET™ 1 46 3.60 140 up to 36 – 10.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS117TC HITFET™ 1 80 3.50 1000 up to 36 – 7.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3104SDL HITFET™ 1 104 2.00 50 up to 36 – 6.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3104SDR HITFET™ 1 104 2.00 50 up to 36 – 6.00 –
Through input pin TO-252-3 (DPAK 3-leg)
AUIPS2041L HITFET™ 1 100 1.40 - up to 35 5.00 – –
–
SOT-223
AUIPS2051L HITFET™ 1 250 0.90 - up to 35 1.80 – –
–
SOT-223
AUIPS2052G HITFET™ 2 250 0.90 - up to 35 1.80 – –
–
SO-8 (DSO-8)
BTS3408G HITFET™ 2 480 0.55 800 up to 36 – 1.00 –
Through input pin
DSO-8
BSP75N HITFET™ 1 490 0.70 550 up to 36 – 1.00 –
Through input pin
SOT-223
www.infineon.com/hitfet
www.infineon.com/industrial-profet
Product Number of
channels
RDS(on)
(typ)
[m]
Nominal load
current
[A]
EAS
[mJ]
Recommended
operating voltage range
[V]
IL(SC) (typ)
[A]
Diagnosis Package
ITS4060S-SJ-N 1 50 3.10 900 @ 1.50 A 5.00 … 34.00 17.0 n/a DSO-8
ISP772T 1 50 2.60 900 @ 1.50 A 5.00 … 34.00 17.0 n/a DSO-8
ITS428L2 1 60 7.00 190 @ 7.00 A 4.75 … 41.00 22.0 Digital TO252-5
ITS4100S-SJ-N 1 70 2.40 870 @ 1.00 A 5.00 … 34.00 10.0 n/a PG-DSO-8
ISP762T 1 70 2.00 870 @ 1.00 A 5.00 … 34.00 10.0 n/a DSO-8
ITS4200S-ME-O 1 150 1.10 700 @ 0.50 A 11.00 … 45.00 1.4 n/a SOT-223-4
ITS4141N 1 150 1.10 700 @ 0.50 A 12.00 … 45.00 1.4 n/a SOT-223-4
ITS4141D 1 150 1.10 12,000 @ 0.50 A 12.00 … 45.00 1.4 n/a TO-252-5
ITS4200S-ME-P 1 150 2.20 160 @ 1.00 A 11.00 … 45.00 3.0 n/a SOT-223-4
ITS4142N 1 150 2.20 160 @ 1.00 A 12.00 … 45.00 3.0 n/a SOT-223-4
ITS4200S-ME-N 1 160 1.20 500 @ 0.50 A 5.00 … 34.00 1.5 n/a DSO-8
ISP452 1 160 1.20 500 @ 0.50 A 5.00 … 34.00 1.5 n/a SOT-223-4
ITS4200S-SJ-D 1 150 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 Digital DSO-8
ISP752R 1 200 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 Digital DSO-8
ISP752T 1 200 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 n/a DSO-8
ITS4300S-SJ-D 1 250 0.80 800 @ 0.30 A 5.00 … 34.00 1.2 Digital DSO-8
ISP742RI 1 350 0.80 800 @ 0.30 A 5.00 … 34.00 1.2 Digital, inverted DSO-8
ITS41K0S-ME-N 1 1000 0.55 1000 @ 0.15 A 4.90 … 60.00 0.9 n/a SOT-223-4
ITS4140N 1 1000 0.55 1000 @ 0.15 A 4.90 … 60.00 0.9 n/a SOT-223-4
ITS4040D-EP-D 2 40 2 x 2.00 185 * 5.00 … 45.00 4.1 Digital TSDSO-14
ITS5215L 2 90 2 x 2.00 178 @ 3.50 A 5.50 … 40.00 15.0 Digital DSO-12
ITS42K5D-LD-F 2 2500 2 x 0.25 Freewheeling 4.50 … 45.00 0.6 Digital TSON-10
ITS4075Q-EP-D 4 75 4 x 2.00 60 * 5.00 … 45.00 4.1 Digital TSDSO-14
ITS4090Q-EP-D 4 100 4 x 0.50 410 * 5.00 … 45.00 1.5 Digital TSDSO-14
ITS724G 4 90 4 x 2.00 120 @ 3.30 A 5.50 … 40.00 15.0 Digital DSO-20
ITS4130Q-EP-D 4 130 4 x 0.50 380 * 5.00 … 45.00 1.25 Digital TSDSO-14
ITS716G 4 140 4 x 1.00 76 @ 2.30 A 5.50 … 40.00 9.0 Digital DSO-20
ITS711L1 4 200 4 x 1.00 150 @ 1.90 A 5.00 … 35.00 7.5 Digital DSO-20
ITS42008-SB-D 8 200 8 x 0.60
10,000 @ 625 mA
11.00 … 45.00 3.0 Digital DSO-36
ITS4880R 8 200 8 x 0.60
10,000 @ 625 mA
11.00 … 45.00 3.0 Digital DSO-36
HITFET™ product portfolio
Industrial PROFET™ product portfolio
285
For more details on the product,
click on the part number.
Further information, datasheets and documents
www.infineon.com/isoface
www.infineon.com/hitfet
www.infineon.com/industrial-profet
www.infineon.com/shields-for-arduino
Infineon support for
intelligent switches and input ICs
Useful links and helpful information
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
286
For more details on the product,
click on the part number.
› EiceDRIVER™ 1EDN
› EiceDRIVER™ 2EDN
› EiceDRIVER™ 2EDi product
› GaN EiceDRIVER™
› 650 V level shi SOI and JI gate driver
for IGBTs and MOSFETs
› 200 V level shi SOI and JI gate driver for MOSFET
› Non-isolated low-side gate driver ICs
› EiceDRIVER™ Enhanced 1ED-F2 and 2ED-F2
› EiceDRIVER™ 1ED Compact
› EiceDRIVER™ Enhanced 1ED34xx (X3 analog)
and 1ED38xx (X3 digital)
› EiceDRIVER™ 1EDS-SRC
› Industrial and general purpose gate driver ICs
› Product portfolio
› Nomenclature
› Gate driver selection tool
Gate driver ICs
287
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
288
For more details on the product,
click on the part number.
EiceDRIVER™ overview
Gate driver ICs
EiceDRIVER™ gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs
Every switch needs a driver – the right driver makes a dierence. Power electronics applications employ power device
switches. And power device switches require optimum gate driver solutions. That is why we oer more than 500
EiceDRIVER™ gate driver IC solutions suitable for any power switch, and for any application.
EiceDRIVER™ gate driver ICs provide a
wide range of typical output current
options, from 0.1-A up to 10-A. Robust
gate drive protection features such as
fast short-circuit protection (DESAT),
active Miller clamp, shoot-through
protection, fault, shutdown, and
overcurrent protection make them
well-suited for both silicon and wide
bandgap power devices, including
CoolGaN™ and CoolSiC™.
Right configuration for any power
dicrete and module
Our portfolio spans a variety of
configurations, voltage classes,
isolation levels, protection features,
and package options. We oer
excellent product families of galvanic
isolated gate drivers, automotive
qualifies gate drivers, 200 V, 500-700 V,
1200 V level shi gate drivers, and non-
isolated low-side drivers.
Advanced features for dierent applications
Our EiceDRIVER™ gate drivers provide
advanced features such as integrated
bootstrap diode(BSD), overcurrent protection,
shutdown, fault reporting, enable, input filter,
OPAMP, DESAT, programmable deadtime,
shoot through protection, active miller
clamp, active shutdown, separate sink and
source outputs, short circuit clamping,
so shutdown, two level turn o, galvanic
isolation(functional, basic and reinforced), etc.
EiceDRIVER™ Gate Driver Selection
By switch device
By configuration By application
By isolation
Automotive qualified
Gate driver forum Gate driver
selection guide
Gate driver
finder
CoolGaN™
HEMTs
gate drivers
CoolSiC™
MOSFET
gate drivers
MOSFET
gate drivers
IGBT
gate drivers
Non isolatedIsolated
Level shi
Synchr.
buck
Gate
driver
support
ICs
Driver
boards
Three
phase
Full
bridge
High and
low side
Half
bridge
High side
Low side
www.infineon.com/gatedriver
Gate driver configuration 5 V 25 V 100 V 200 V 500 V 600 V 650 V 1200 V
Gate
driv-
ers
1-Channel High-side
Low-side
2-Channel
High-side
Low-side
High- and
low-side
Half-bridge
4-Channel Full-bridge
6-Channel Three-phase
System building
blocks
Current
sense
Start-up
Non-isolated (N-ISO) Junction isolation (JI) Silicon on insulator (SOI) Coreless transformer (CT)
Industrial
robotics
Level-shiing technology
(SOI&JI)
Coreless transformer
(CT) technology
Non-Isolated
(N-ISO) technology
289
For more details on the product,
click on the part number.
EiceDRIVER™ overview
www.infineon.com/gatedriver
Single-channel low-side driver Single-channel high-side driver
Dual-channel low-side driver Dual-channel high-side driver
High and low-side driver Half-bridge driver
Current sense
Three-phase bridge
Allows low oset of the voltage
between input and output
Allows high voltage oset
between input and output
Both channels allow individual low
voltage osets, no interlock
Both channels allow individual high
voltage osets, no interlock
Two non-interlocked
channels, one for high,
one for low voltage osets
Two interlocked channels where
one of the channel allows a high
voltage oset
Current sensing across a high-
voltage oset between sense
input and data output
Six channels in a
package with three
independent half
bridges
Synchronous-buck driver
High speed drivers
for dual high-side and
low-side MOSFETs in
synchronous rectified
buck converters
Full-bridge driver
Four channels in a package
with two independent half
bridges
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
290
For more details on the product,
click on the part number.
EiceDRIVER™ 1EDN
Rugged, cool and fast, single-channel low-side 4 A/8 A gate driver ICs
Single-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET switching
devices. EiceDRIVER™ 1EDN family is fast, precise, strong and compatible. In SMPS designs, for fast MOSFET switching,
high eiciency is enabled by 5 ns short slew rates and ±5 ns propagation delay precision. Separate source and sink
outputs simplify the application design, while industry standard packages and pinout ease system design upgrades.
EiceDRIVER™ 1EDN family brings about the new reference in ruggedness and low power dissipation. A -10 V robustness
of control and enable inputs provide crucial safety margin when driving pulse transformers. 5 A reverse output
current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247
packages. True rail-to-rail low impedance output stages ensure the cool operation of driver ICs, while 4 V and 8 V UVLO
(undervoltage lockout) options for instant MOSFET oer protection during start-up and under abnormal conditions.
Product features
› 4 A source/8 A sink current
› 6 ns rise/5 ns fall times
› ± 5 ns propagation delay precision
› True rail-to-rail low impedance output stages
› 4 V and 8 V UVLO options
› 19 ns propagation delay
› -10 V robustness of inputs
› 5 A reverse output current robustness
› Industry standard pinout and packages
Product benefits
› Fast Miller plateau transition
› Precise timing
› Low power dissipation in driver IC
› Fast and reliable MOSFET turn-o,
independent of control IC
› Increased GND-bounce robustness
› Saving switching diodes
› Straight forward design upgrades
Application benefits
› High power eiciency
– in hard switching PFC with SiC diode
– in half-bridges and synchronous rectifications
› Cooler driver IC operation
› Higher MOSFET drive capability
› Instant MOSFET protection during start-up and
under abnormal operation
› Crucial safety margin to drive pulse transformer
› Increases power density
› BOM savings
› Short time-to-market
PFC controller
L
GND
N
+12
V
Isolation
1EDN
gate driver
1EDN
gate driver
2EDN
gate
driver
Pulse
transformer
PWM controller
1EDN
gate driver
Synchronous rectification
LLC
PFC
CoolSiC™
Schottky diode G6
OptiMOS™
5O
ptiMOS™ 5
CoolMOS™
CFD7 or P7
CoolMOS™
CFD7 or P7
CoolMOS™
C7 or P7
Application overview: 800 W switched mode power supply
Package UVLO Product name Orderable part number Pinout
SOT-23 6-pin
4 V 1EDN7511B 1EDN7511BXUSA1
1
1EDN
VDD
2
3
IN+
GND
6
IN-
5
4
OUT_SNK
OUT_SRC
8 V 1EDN8511B 1EDN8511BXUSA1
SOT-23 5-pin 4 V 1EDN7512B 1EDN7512BXTSA1
1
1EDN
VDD
2
3
OUT
IN-
5
4
IN+
GND
WSON 6-pin 4 V 1EDN7512G 1EDN7512GXTMA1
1
1EDN
IN-
2
3
IN+
OUT
VDD
6
5
4
GND
GND
www.infineon.com/1edn
Features and benefits
EiceDRIVER™ highlight products
291
For more details on the product,
click on the part number.
Single-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFETs. The input signal levels
of conventional low-side gate driver ICs are referenced to the ground potential of the gate driver IC. If in the application the
ground potential of the gate driver IC shis excessively, false triggering of the gate driver IC can occur. Gate driver ground-shis
have two main causes: the parasitic ground inductance between where the gate driver IC is placed and where the control-IC
resides, and parasitic source inductances between the gate driver IC and the MOSFET driven by it. Overcome ground-shi
challenges in your design with Infineon’s single-channel, low-side, EiceDRIVER™ gate driver ICs with truly dierential inputs.
The 1EDN7550/1EDN8550 gate driver ICs feature control signal inputs which are largely independent from the ground potential.
Only the voltage dierence between its input contacts is relevant, which prevents false triggering of power MOSFETs.
www.infineon.com/1EDN-TDI
Features and benefits
EiceDRIVER™ 1EDN7550 and 1EDN8550
Single-channel low-side gate driver family with truly dierential inputs
prevents false triggering of power MOSFETs
1EDN7550 driving CoolMOS™ SJ MOSFET on single-layer PCB
in +
VDD
in - OUT sink
Cbulk
CoolSiC™
CoolMOS™
P7
Rbias
RG1
RG2
12 V
Cbias
PWM
controller
GND
PWM
Parasitic
source
inductance
1EDN
7550
OUT source
RCM2
RCM1
CS
Parasitic
GND
Inductance
1EDN8550 driving Kelvin source CoolMOS™ SJ MOSFET in boost PFC
in +
VDD
in - OUT sink
Cbulk
CoolSiC™
Rbias
RG1
RG2
12 V
Cbias
Kelvin-source contact
PFC
controller
CS
GND
Rcurrent sense
Parasitic
source
inductance
OUT source
RCM2
RCM1
CoolMOS™
P7, C7 or G7
CS IN -
IN +
OUT
1EDN
8550
Pinout
1
1EDN7511B
1EDN8511B
VDD
2
3
IN+
GND
6
IN-
5
4
OUT_SNK
OUT_SRC
OUT_SNK
OUT_SRC
VDD
IN+
GND
IN-
Type Ground shi robustness UVLO Package Orderable part number
dynamic static
1EDN7550B +/- 150 V +/- 70 V 4 V SOT-23 6-pin 1EDN7550BXTSA1
1EDN8550B +/- 150 V +/- 70 V 8 V SOT-23 6-pin 1EDN8550BXTSA1
Product features
› Truly dierential inputs
› 4 A source current
› 8 A sink current
› Separate source/sink outputs
› Low-ohmic output stage
› 29 ns input minimum pulse width
› 7 ns propagation delay accuracy
› 5 A reverse current robustness
of the outputs
› 4 V and 8 V UVLO versions
› SOT-23 package, 6 pins
Product benefits
› Control inputs independent
from gate driver GND
› Fast Miller plateau transition
› Fast shut-o
› No diode voltage drop → near zero
gate voltage at turn-o
› Low power dissipation within gate driver IC
› Up to 15 MHz switching speed
› Precise
› No Schottky clamping diodes required
› Fast and reliable MOSFET turn-o
› Small
Application benefits
› Robust against ground shis
from power MOSFET switching
› Low MOSFET switching losses
› Robust against false
MOSFET triggering
› Highest eective MOSFET
driving power
› Eiciency gains
› Increased power density and BOM savings
› Instant MOSFET protection under abnormal
operation
› High power density
EiceDRIVER™ highlight products
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
292
For more details on the product,
click on the part number.
EiceDRIVER™ 2EDN
Rugged, cool and fast, dual-channel low-side 4 A/5 A driver IC
Dual-channel driver ICs are the crucial link between digital control ICs and powerful MOSFET and GaN switching devices. EiceDRIV-
ER™ 2EDN family is fast, precise, strong and compatible. In SMPS designs, high eiciency is enabled by 5 ns short slew rates and 10
ns propagation delay precision for fast MOSFET and GaN switching. The family oers numerous deployment options thanks to two
4 A/5 A channels. The channel-to-channel accuracy of 1 ns allows using two channels in parallel, while industry standard packages
and pinout ease system design upgrades. EiceDRIVER™ 2EDN family oers the new reference in ruggedness and low power dissipa-
tion. A 5 A reverse output current robustness eliminates the need for Schottky switching diodes and reduces bill-of-material.
Product features
› 5 A souce/sink current
› 5 ns rise/fall times
› <10 ns propagation delay precision
› True rail-to-rail low impedance output stages
› 4 V and 8 V UVLO options
› 19 ns propagation delay for both control and enable
inputs
› -10V robustness of control and enable inputs
› 5 A reverse output current robustness
› 2 independent channels
› Excellent 1 ns channel-to-channel accuracy
› Industry standard pinout and packages
Product benefits
› Fast Miller plateau transition
› Precise timing
› Low power dissipation in driver IC
› Fast and reliable MOSFET turn-o, independent
of control IC
› Increased GND-bounce robustness
› Saves switching diodes
› Option to increase drive current by truly
concurrent switching of 2 channels
› Straight forward design upgrades
Application benefits
› High power eiciency
– in hard-switching PFC with SiC diode
– in half-bridges and synchronous rectifications
› Cooler driver IC operation
› Higher MOSFET drive capability
› Instant MOSFET protection under abnormal
operation
› Crucial safety margin to drive pulse transformer
› Increases power density
› BOM savings
› One IC covering many applications
› Short time to market
www.infineon.com/2edn
Application overview 800W 130kHz switched mode power supply
110
VAC - 240 VAC
2EDN
Gate driver
PFC controller
Isolation
PWM controller
2EDN
Gate driver
2EDN
Gate
driver
Pulse
transformer
GND
GND
+12
V
CoolMOS™
CFD7 or P7
CoolSiC™
Schottky diode G6
CoolMOS™
C7 or P7
LLC Sync. rec.PFC
CoolMOS™
CFD7 or P7
ICE3PCS01G
ICE2HS01G
or
XMC4000
OptiMOS™ 5
OptiMOS™ 5
Package UVLO Inputs Product name Orderable part number Current
DSO 8-pin
4 V
Direct 2EDN7524F 2EDN7524FXTMA1 5 A
Inverted 2EDN7523F 2EDN7523FXTMA1
Direct 2EDN7424F 2EDN7424FXTMA1 4 A
8 V Direct 2EDN8524F 2EDN8524FXTMA1
5 A
Inverted 2EDN8523F 2EDN8523FXTMA1
TSSOP 8-pin
4 V
Direct 2EDN7524R 2EDN7524RXUMA1
Inverted 2EDN7523R 2EDN7523RXUMA1
Direct 2EDN7424R 2EDN7424RXUMA1 4 A
8 V Direct 2EDN8524R 2EDN8524RXUMA1
5 A
Inverted 2EDN8523R 2EDN8523RXUMA1
WSON 8-pin 4 V Direct 2EDN7524G 2EDN7524GXTMA1
Inverted 2EDN7523G 2EDN7523GXTMA1
Industry standard pinout configuration
1
2EDN7524
ENA
2INA
3
GND
4
ENB
OUT
A
VDD
OUTB
8
7
6
5INB
Features and benefits
EiceDRIVER™ highlight products
293
For more details on the product,
click on the part number.
The EiceDRIVER™ 2EDi product family is designed for use in high-performance power conversion applications. Very strong
4 A/8 A source/sink dual-channel gate drivers increase eiciency in CoolMOS™ and OptiMOS™ MOSFET half-bridges. The low
propagation delay of 37 ns, combined with highly accurate and stable timing overtemperature and production, enables further
eiciency gains within and across galvanically isolated power stages or in multiphase/multilevel topologies. The availability
of functional and reinforced isolated drivers in dierent packages makes them the perfect fit for both primary-side and (safe)
secondary-side control. Gate driver outputs come with a high 5 A reverse current capability and 150 V/ns CMTI robustness for high
dv/dt power loops. For slower switching or driving smaller MOSFETs, 1 A/2 A peak current product variants are available as well.
Features and benefits
EiceDRIVER™ 2EDi
Fast, robust, dual-channel, functional and reinforced isolated
MOSFET gate drivers with accurate and stable timing
System application diagram
DSO 16-pin
Narrow body
1.27 mm lead pitch
Functional isolation
LGA 13-pin 5x5 mm
0.65 mm lead pitch
Functional isolation
DSO 16-pin
Wide body
1.27 mm lead pitch
Reinforced isolation
4 mm 8 mm
PFC
EMI
Filter
Primary
stage
Sync
Rec
Isolated
DC-DC
Non-isolated
DC-DC Brick
2EDF7275F 4 A/8 A
2EDF7175F 1 A/2 A
2EDS8265H 4 A/8 A
2EDS8165H 1 A/2 A
2EDF7275K 4 A/8 A
2EDF7235K 4 A/8 A w. DTC
TCOM supplies
TCOM PDU
CPU (VRM)
POL power
Product key features Product benefits System benefits
Fast power switching with accurate timing
› Available with 4 A/8 A and 1 A/2 A source/sink currents
› Propagation delay typ. 37 ns with 3 ns
channel-to-channel mismatch
› Max. delay variation ~14 ns
Eiciency gain and lower losses
› Lower switching losses in half-bridges due to fast
and accurate turn on/o
› Perfect for new digital, fast high resolution PWM
control including light load optimization
Enabling higher system eiciency and higher power
density designs
Optimized for area and system BOM
› Isolation and driver in one package
› Low power dissipation due to low on-resistance
› Output stages with 5A reverse current capability
Improved thermal behavior at smaller form factor
› LGA with 1 mm, DSO with 2.3 mm package height
versus volume > 1 cm3 for pulse transformers
› Eliminates two costly protection diodes on the
gate driver outputs
Improving long term competitive cost position,
integration and mass manufacturability
Robust design against switching noise
› Floating drivers are able to handle large
inductive voltage over- and undershoots
› Very good common mode transient immunity
CMTI >150 V/ns
› Undervoltage lockout function for switch protection
Protection and safe operation
› Ideal for use in high power designs with fast
switching transients
› Reliable CT coreless transformer PWM signal chain
to turn-on high-side MOSFETs
Extending end-product lifetime
by improving safe operation of power switches in
normal and abnormal field (grid) conditions
Output- to -output channel isolation
› Functional level galvanic isolation
Flexible configurations
› HS+LS, HS+HS, LS+LS or 2x Imax on 1xHS
Lower EMI by ground isolation, driver
proximity to MOSFETs or the use of 4-pin
Kelvin source MOSFETs
Input- to output channel isolation
› Functional and reinforced galvanic isolation
Regulatory safety
› Functional for primary-side control
› Reinforced for secondary-side control
Simplified safety approval through component
(VDE884-x, UL1577) and system (IEC60950, IEC62386)
certificates
Part number Orderable part number
(OPN) Package PWM
input type
Driver
source/
sink
current
Gate
driver
UVLO
Input to output isolation
Dead-time
control
Isolation class Rating Surge testing Safety
certification
2EDF7275F 2EDF7275FXUMA1 NB-DSO16
10 x 6 mm
Dual mode
(IN_A, IN_B)
4 A/8 A
4 V Functional VIO =1.5 kVDC n.a. n.a.
no
2EDF7175F 2EDF7175FXUMA1 1 A/2 A
2EDF7275K 2EDF7275KXUMA1 LGA13
5.0 x 5.0 mm 4 A/8 A
2EDF7235K 2EDF7235KXUMA1 yes
2EDS8265H 2EDS8265HXUMA1
WB-DSO16
10.3 x 10.3 mm
4 A/8 A
8 V Reinforced
VIOTM = 8 kVpeak
(VDE0884-1x)
VISO = 5.7 kVrms
(UL1577)
VIOSM = 10 kVpeak
(IEC60065)
VDE0884-10
UL1577
IEC60950
IEC62368
CQC
no
2EDS8165H 2EDS8165HXUMA1 1 A/2 A
www.infineon.com/2edi
EiceDRIVER™ highlight products
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
294
For more details on the product,
click on the part number.
EiceDRIVER™ highlight products
GaN EiceDRIVER™
Single-channel isolated gate driver ICs for high voltage GaN switches
GaN EiceDRIVER™ ICs evaluation environment
High-frequency (1 MHz) half-bridge evaluation board EVAL_1EDF_G1_HB_GAN
Key components:
GaN switches: 2x CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1)
GaN drivers: 2x GaN EiceDRIVER™ (1EDF5673K)
Order code: EVAL1EDFG1HBGANTOBO1
CoolGaN™ e-mode HEMTs are best driven by Infineon’s GaN EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and
1EDS5663H. They ensure robust and highly eicient high voltage GaN switch operation whilst concurrently minimizing
R&D eorts and shortening time-to-market.
High power SMPS application example Key use cases
› Totem pole PFCs
› Vienna rectifiers
› Multilevel topologies
› Resonant LLC
www.infineon.com/gan-eicedriver
CoolMOS™
CoolMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
AC
LINE
EMI
filter
EiceDRIVER™
2EDF7275
LLC
controller
Totem pole
Full-bridge PFC Resonant LLC Synchronous
rectifier
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
*GaN EiceDRIVER™ ICs are single-channel products
2 x EiceDRIVER™
2EDF7275
2 x
GaN EiceDRIVER™
1EDF5673* 4 x
GaN EiceDRIVER™
1EDS5663H*
PFC
controller
Package
LGA 13-pin 5x5 mm DSO 16-pin 150 mil DSO 16-pin 300 mil
Product 1EDF5673K 1EDF5673F 1EDS5663H
OPN 1EDF5673KXUMA1 1EDF5673FXUMA1 1EDS5663HXUMA1
Isolation (input to output) VIO = 1500 VDC VIO = 1500 VDC VIOTM = 8000 Vpk (VDE0884-10 pending)
Source/sink output resistance 0.85 Ω/0.35 Ω 0.85 Ω/0.35 Ω 0.85 Ω/0.35 Ω
UVLO 4.5 V / 5.0 V 4.5 V / 5.0 V 4.5 V / 5.0 V
Charger
Features and benefits
Key benefits
Positive and negative gate drive currents:
› Fast turn-on/turn-o GaN switch slew-rates
Firmly hold gate voltage at zero, during o-phase:
› Avoids spurious GaN switch turn-on
› Up to 50% lower dead time losses
Configurable and constant GaN switching slew-rates, across wide range of
switching frequency and duty-cycle:
› Robust and energy eicient SMPS designs
› Short time to market
Integrated galvanic isolation:
› Robust operation in hard-switching applications
› Safe isolation where needed
Key features
Low ohmic outputs:
› Source: 0.85 Ω
› Sink: 0.35 Ω
Single-channel galvanic isolation:
Functional:
› VIO= 1500 VDC
› VIOWM = 510 Vrms (DSO 16-pin)
› VIOWM = 460 Vrms (LGA 5x5)
Reinforced:
› VIOTM = 8000 Vpk (VDE 0884-10 pending)
› VIOWM = 1420 VDC
› CMTI min: 200 V/ns
Timing:
› Minimum output pulse width: 18 ns
› Propagation delay accuracy: 13 ns
295
For more details on the product,
click on the part number.
EiceDRIVER™ highlight products
650 V level shi SOI and JI gate driver
for IGBTs and MOSFETs
EiceDRIVER™ 2ED210xS06 and 2ED218xS06 - 650 V half-bridge, high and low-side
gate drivers with integrated bootstrap diode
Evaluation board : EVAL-M1-2ED2106S
Key components:
› 650 V high- and low-side gate driver with integrated
bootstrap diode (2ED2106S06F)
› 650 V IGBT6 (IKB10N65ET6)
Order code: EVALM12ED2106STOBO1
www.infineon.com/SOI
Features and benefits
The 2ED2106/08/09/091S06 gate driver family and 2ED2181/83/84S06 high-current gate driver family are high-voltage
power MOSFET and IGBT driver families with half-bridge and high and low-side configuration. Based on SOI-technolo-
gy, this device has excellent robustness and noise immunity with the capability to maintain operational logic at nega-
tive voltages of up to -11 VDC on the VS pin (VCC=15 V) on transient voltages. With no parasitic structures, the device is
immune to parasitic latch-up at all temperature and voltage conditions.
Power dissipation of Infineon SOI
DC = 300 V; CoolMOS™ P7 in D-Pak; 300 kHz switching frequency
120.3°
20.4°
Infineon SOI HS+LS driver
Max. temperature 66.6°
Standard HS+LS driver
Max. temperature 122.2°
Part Output
current Input Logic Configuration Deadtime Package
2ED2106S07F *
+0.29 A/-0.7 A
HIN, LIN Hide side + Low
side none DSO-8
2ED21064S07J * DSO-14
2ED2108S07F * HIN, /LIN
Half-bridge
540 ns DSO-8
2ED21084S07J * Programmable DSO-14
2ED2109S07F * IN, /SD 540 ns DSO-8
2ED21094S07J * IN, DT/SD Programmable DSO-14
2ED21091S07F * DSO-8
2ED2181S07F *
+2.5 A/-2.5 A
HIN, LIN
Hide side + Low
side None DSO-8
2ED21814S07J * DSO-14
2ED2182S07F *
Half-bridge
400 ns DSO-8
2ED21824S07J * Programmable DSO-14
2ED2183S07F * HIN, /LIN 400 ns DSO-8
2ED21834S07J * Programmable DSO-14
2ED2184S07F * IN, /SD 400 ns DSO-8
2ED21844S07J * Programmable DSO-14
Simplified application diagrams
Key benefits
› Infineon 650 V thin-film SOI-technology
› Integrated ultrafast, low resistance bootstrap diode
› Negative VS transient immunity of 100 V
› Logic operational up to –11 V on VS pin
› Separate logic and power ground (DSO-14)
Key benefits
› Low level shi losses, suitable for high-frequency application
› Quick time to market, reduced BOM cost
› High reliability and robustness
› SOI technology eliminates the parasitic bipolar transistors that are causing latch-up
› Integrated input filters enhance noise immunity
IN
2ED2184S06J
VSS
RDT
VCC
SD SD
IN
VS
HO
VB
VSS
COM
LO
VCC
DT
1
2
3
4
5
6
7
14 Up to 650 V
TO
LO
AD
13
12
11
10
9
8
VCC
Up to 650 V2ED2106S06F
TO
LO
AD
HIN
VCCVB
HO
VS
LO
HIN
LIN
COM
LIN
1
2
3
4
8
7
6
5
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
296
For more details on the product,
click on the part number.
EiceDRIVER™ highlight products
650 V level shi SOI and JI gate drivers for
IGBTs and MOSFETs
EiceDRIVER™ 2ED28073J06F - 600 V half-bridge junction isolated gate driver with
integrated bootstrap FET
The 2ED28073J06F is a high voltage, high-speed power MOSFET and IGBT drivers with dependent high and low-side
referenced output channels. It is optimized to drive CoolMOS™ PFD7 in motor drive applications. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction. The output drivers feature a high-pulse
current buer stage designed for minimum driver cross-conduction. The floating channel can be used to drive N-chan-
nel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
EVAL_DRIVE_3PH_PFD7 is a three-phase motor drive evaluation board with sensorless field oriented control (FOC),
which demonstrates Infineon’s latest SJ technology tuned specially for motor drives by introducing a complete
system-level solution using discrete inverters to control and drive three-phase motors. The evaluation board EVAL_
DRIVE_3PH_PFD7 was developed to support customers in the first steps of designing a three-phase inverter stage for
the target applications
www.infineon.com/700VHVIC
Typical application diagram Up to 200 V
to lo
ad
VCC VCC VB
VS
HIN
HO
COMLO
LIN
HIN
LIN
Features and benefits
Evaluation board
EVAL_DRIVE_3PH_PFD7
Key components:
› CoolMOS™ PFD7 gate driver suitable for low power drives (2ED28073J06F *)
› 600 V CoolMOS™ PFD7 MOSFET (IPN60R1K5PFD7S)
Order code: EVALDRIVE3PHPFD7TOBO1
Key features
Source current / sink current: + 20 mA/ - 80 mA
Negative VS transient immunity of 70 V, dV/dt immune
Lower di/dt gate driver
Integrated bootstrap FET
Integrated short pulse/noise rejection filter
Key benefits
Smaller current for low power drive application with CoolMOS™ PFD7,
reduced system cost of high voltage capacitor (CDS).
High reliability and robustnexss
Better noise immunity
Quick time to market, reduced BOM cost
An improvement in the input/output pulse symmetry of the driver and helps to
reject noise spikes and short pulses
*For more information on the product, contact our product support
297
For more details on the product,
click on the part number.
6ED2230S12T - 1200 V three-phase gate driver with overcurrent protection
and integrated bootstrap diode (BSD)
The 6ED2230S12T is a 1200 V three-phase SOI gate driver with an integrated bootstrap diode and overcurrent protection,
with typical 0.35 A source and 0.65 A sink currents in a DSO-24 package (DSO-28 with 4 pins removed) for driving IGBTs.
Proprietary HVIC and latch-immune CMOS technologies enable a robust monolithic design. A current-trip function which
terminates all six outputs can also be derived from this resistor. An open-drain FAULT signal is provided to indicate that an
overcurrent or undervoltage shutdown has occurred. Fault conditions are cleared automatically aer a delay programmed
externally via an RC network. The output drivers feature a high-pulse current buer stage designed for minimum driver
cross conduction. Propagation delays are matched to simplify the HVIC’s use in high-frequency applications.
Typical application diagram
Negative VS transient robustness of Infineon SOI
DC BUS+
To load
DC BU
S–
VCC
HIN 1, 2, 3
FLT/EN/RCIN
ITRIP
VSSCOM
LO 1, 2, 3
VS 1, 2, 3
HO 1, 2, 3
VB 1, 2, 3
LIN 1, 2, 3
Negative VS transient SOA characterization @ VBS=15 V of 6ED2230S12T
-20
-100
-120
-40
-60
-80
0
PW (ns)
Minus Vs (V)
0 200 400 600 800 1000
SOA
Evaluation board available: EVAL-M1-6ED2230-B1
Key components:
› 1200 V three-phase gate driver with integrated bootstrap
diode (6ED2230S12T)
› 1200 V, 15 A three-phase PIM IGBT module (FP15R12W1T4)
Order code: EVALM16ED2230B1TOBO1
Features and benefits
www.infineon.com/SOI
Key benefits
› Infineon thin-film SOI technology
› Output source/sink current capability +0.35 A/-0.65 A
› Integrated ultrafast, low RDS(on) bootstrap diode
› Overcurrent protection (ITRIP ±5% reference)
› Fault reporting, automatic fault clear and enable function on the same pin (RFE)
Key benefits
› Tolerant to negative transient voltage up to -100 V (pulse width is up 700 ns)
given by SOI technology, high reliability and robustness
› Drive 1200 V IGBT and SiC MOSFET
› Quick time to market, reduced BOM cost
› Advanced protection
EiceDRIVER™ highlight products
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
298
For more details on the product,
click on the part number.
200 V level shi SOI and JI gate drivers for MOSFET
Half-bridge, high and low-side, three-phase gate driver family for low voltage
motor drives
Infineon oers 200 V ICs tailored for low-voltage (24 V, 36 V, and 48 V) and mid-voltage (60 V, 80 V, and 100 V) motor
drive applications. These MOSFET drivers provide full driver capability with extremely fast switching speeds, designed-
in ruggedness and low power dissipation. The 200 V driver ICs are oered in standard packages and pinout configura-
tions with various logic input options for high design flexibility and fast time to market. Low side supply voltage (VCC)
and floating channel supply (VBS) undervoltage lockout (UVLO) ensures reliable start-up operation. The three-phase
product family utilizes Infineon’s unique Silicon-on-Insulator(SOI) level shi technology to provide functional isolation
with industry leading negative VS robustness and reduced level shi losses. The family provides integrated Bootstrap
Diodes(BSD) to reduce BOM cost, simplify layout, and reduce PCB size.
www.infineon.com/200VHVIC
Features and benefits
Simplified application diagram
IRS2008S Up to 200 V
to lo
ad
V
CC
VCC VB
VS
IN
IN HO
COMLO
SD
SD
6EDL04N02PR
Evaluation board
EVAL-PS-IRS200X for stepper motor
Key components:
› 200 V high-side and low-side
level-shi gate driver (IRS2005S)
› OptiMOS™ 3 power MOSFET 100 V (IPP180N10N3 G)
Order code: EVALPSIRS200XTOBO1
Evaluation board
EVAL-6EDL04N02PR for battery powered
application
Key components:
› 200 V three-phase gate driver with integrated
bootstrap diode (6EDL04N02PR)
› OptiMOS™ power MOSFET 80 V (BSB044N08NN3 G
)
Order code: EVAL6EDL04N02PRTOBO1
Part number Voltage
class
[V]
Configuration Channels
Source/sink
current typ.
[mA]
Deadtime
typ.
[ns]
Typ. propagation delay [ns] Control
inputs
UVLO typ.
[V] Package MSL
on o
IRS2008S, IRS2008M 200 Half-bridge 2 290/600 520 680 150 IN, SD +8.9/-8.2 DSO-8, MLPQ-14L 2
IRS2007S, IRS2007M 200 Half-bridge 2 290/600 520 160 150 HIN, LIN +8.9/-8.2 DSO-8, MLPQ-14L 2
IRS2005S, IRS2005M 200 High- and low-side 2 290/600 – 160 150 HIN, LIN +8.9/-8.2 DSO-8, MLPQ-14L 2
6EDL04N02PR 200 Three-phase 6 165/375 310 530 530 HIN, LIN +9/-8.1 TSSOP-28 3
Key features
VCCUVLO protection with VBS UVLO for IRS2005/7/8
Deadtime and cross-conduction prevention logic
Three-phase solution with silicon-on-insulator (SOI) technology with integrated
bootstrap diodes (BSD)
Deadtime and cross-conduction prevention logic
Fully operational to +200 V o set voltage
Tolerate to negative transient voltage, dV/dt immune
Low quiescent current
Various input options , standard pin-out and packages
Key benefits
Fast and reliable switching
Protection under abnormal operation, Ensure reliable start-up operation
Reduced BOM cost, smaller PCB at lower cost with simpler design
Increased negative VS robustness for increased reliability
Increased device reliability, operational headroom
Low-cost bootstrap power supply
Easy-to-use, straight-forward design
Fast time to market
VCC
FAULT
LIN 1,2,3
EN
RCIN
ITRIP
VSS
VB 1,2,3
HO 1,2,3
VS 1,2,3
LO 1,2,3
COM
To Load
VSS
EN
R
RCIN
C
RCIN
HIN 1,2,3
HIN
1,2,3
LIN
1,2,3
FAULT
VCC
DC -Bus
R
Sh
5V
EiceDRIVER™ highlight products
299
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
300
For more details on the product,
click on the part number.
Non-isolated low-side gate driver ICs
1ED44173/5/6 - 25 V low-side gate driver with integrated overcurrent protection
and fault/enable function
The 1ED44173N01B, 1ED44175N01B, and 1ED44176NO1F are low-voltage, non-inverting gate drivers designed
for ground-referenced applications such as digitally controlled power-factor correction (PFC) circuits requiring
overcurrent protection (OCP). OCP is typically implemented by using a current measurement circuit with a comparator
such as LM293 and a network of resistors and capacitors. 1ED44173N01B, 1ED44175N01B, and 1ED44176NO1F also
integrate up to 20% cost and 50% space savings by integrating the OCP comparator, which features an accurate
current-sensing threshold tolerance of ±5%. 1ED44173N01B, 1ED44175N01B, and 1ED44176NO1F also integrate
fault-output reporting to the controller and driver enable functionality on the same pin. These driver ICs also have
separate logic and power ground pins for operational robustness.
Simplified application diagram
Product features
Integrated overcurrent protection comparator with
accurate OCP threshold
Single pin for fault output and enable function
Programmable fault clear time
Low quiescent supply current
Separate logic ground and gate driver return
Undervoltage lockout (UVLO) protection
Product benefits
› 0.5 V overcurrent threshold with accurate ±5
percent tolerance
› Internal Schmitt trigger comparator for the
enable function
› External capacitor (CF LTC ) sets the length of the fault
clear time
› Max IQCC: 750 µA
› VSS and COM pins
› Specific UVLO level for IGBTs
(typ. on/o = 11.9 V / 11.4 V)
Application benefits
Potential space savings up to 50 percent and cost
savings up to 20 percent compared to the discrete
solution
Flexible fault clear time setup for dierent micro-
controller processing speeds
Minimizes power consumption
Avoids noise coupling from output to input which
improves noise immunity
Eliminates switching loss at low VCC supply voltage
Features and benefits
www.Infineon.com/1ED44176
www.Infineon.com/1ED44175
*Coming soon
Part Number Package IO+/- [A] UVLO [V] VOCTH [mV] ton/o [ns] Ground pins Feature
1ED44176N01F DSO-8 +0.8 /-1.75 11.9 / 11.4 500 50 VSS / COM OCP (positive current sensing), Enable,
Fault, Programmable fault clear time
1ED44175N01B SOT23-6 ±2.6 11.9 / 11.4 -250 50 COM OCP (negative current sensing), Enable,
Fault
1ED44173N01B * SOT23-6 ±2.6 8 / 7 -250 34 COM
1ED44175N01B
VCC
Vin-
Vin+
RCS
VCC
OUT
COM
OCP
EN/FLT
IN
VDD
RFLTC
CFLTC
Microc
ontroller
I/O2
I/O1
Gnd
EiceDRIVER™ highlight products
Evaluation board
EVAL-1ED44176N01F
EVAL-1ED44175N01B *
EVAL-1ED44173N01B *
Key components:
› 25 V low-side gate driver with
integrated OCP (1ED4417x)
› Single N-Channel HEXFET™
power MOSFET 30 V (IRLML2803)
Order code:
EVAL1ED44176N01FTOBO1
EVAL1ED44175N01BTOBO1
EVAL1ED44173N01BTOBO1
301
For more details on the product,
click on the part number.
*Coming soon
* * For more information on the product, contact our product support
2ED24427N01F * – 24 V, 10 A dual low-side gate driver with enable-function in
DSO-8 package with thermal pad
The 2ED24427N01F is a low-voltage, power MOSFET and IGBT non-inverting gate driver. Proprietary latch immune
CMOS technologies enable rugged monolithic construction. The logic input is compatible with standard CMOS or
LSTTL output. The output drivers feature a high pulse current buer stage designed for minimum driver cross-
conduction. Propagation delays between two channels are matched. Internal circuitry on VCC pin provides an
undervoltage lockout protection that holds output low until Vcc supply voltage is within operating range.
In half-bridge LLC or full-bridge ZVS power topologies, 2ED24427N01F can easily drive low RDS(on) high voltage MOSFETs
in a half-bridge at high-switching frequencies in. In synchronous rectification, more than two MOSFETs can be
paralleled and driven from a single channel of the driver. One 2ED24427 can easily drive both synchronous rectification
legs. When higher current needed, 2ED24427N01F can boost the current from regular gate driver and drive high current
IGBTs or MOSFETs or EasyPACK™ or EconoPACK™ power modules. 2ED24427 outputs can be paralleled to increase the
drive current to drive power modules such as PrimePACK™.
Simplified application diagram
www.infineon.com/gdlowside
EN
Logic level
input
Rg
To lo
ad
Rg
Vbatt
+
–
NC
OUTA
OUTB
VCC
INA
INB
COM
Features and benefits
Evaluation board
EVAL-2ED24427N01F *
Key components:
› 24 V, 10 A dual low-side gate driver with
Enable in DSO-8 package with thermal pad
(2ED24427N01F * *)
› OptiMOS™ 5 power MOSFET 80 V
(BSC026N08NS5 )
Order code:
EVAL2ED24427N01FTOBO1
EiceDRIVER™ highlight products
Key features
10 A sink and 10 A source driver capability
11.5 V undervoltage lockout
24 V maximum supply voltage
Enable function
DSO-8 package with thermal pad
Key benefits
Suitable for IGBT/MOSFET paralleling, transformer driver, easily drive low
RDS(on) MOSFETs at high switching frequencies
Can be used as external booster
Robustness in noisy environment
Dedicated pin to terminates all outputs
Smaller thermal resistor, bigger Power dissipation
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
302
For more details on the product,
click on the part number.
EiceDRIVER™ Enhanced 1ED-F2 and 2ED-F2
1200 V single and dual-channel, isolated driver family with DESAT and two level turn o
The EiceDRIVER™ 1ED Enhanced gate driver ICs are galvanic isolated single-channel IGBT and SiC MOSFET drivers in
DSO-16 package that provide output current capabilities of typically 2 A. The precision DESAT function for IGBT is also
an excellent solution for SiC MOSFET short-circuit protection. All logic pins are 5 V CMOS compatible. 2ED020I12-F2 is
the dual-channel version of 1ED020I12-F2 in DSO-36 package. 2ED020I12-FI is a high voltage, high-speed power MOS-
FET and IGBT driver with interlocking high and low-side referenced outputs.
Features and benefits
+15 V+5 V
RDY
FLT
RST
SGND
10k
10k
100n
1ED020I12-F2
VCC1
1μ
10R
220p
1k
VEE2
VCC2
GND2
NC
OUT
CLAMP
DESAT
GND1
IN+
RDY
/FLT
/RST
IN-
IN
Simplified application diagram
Evaluation board:
EVAL-1ED020I12-B2
EVAL-1ED020I12-BT
EVAL-2ED020I12-F2
Key components:
› 1ED-B2 with EasyPACK™ 1B IGBT module (FS25R12W1T4_B11)
› 1ED-BT with TRENCHSTOP™ IGBT 4 (IKW25N120H3)
› 2ED-F2 with TRENCHSTOP™ IGBT 3 (IKP20N60H3)
Order code:
EVAL1ED020I12B2TOBO1
EVAL1ED020I12BTTOBO1
EVAL2ED020I12F2TOBO1
EiceDRIVER™ Enhanced 1ED020I12-F2 2ED020I12-F2 1ED020I12-FT 1ED020I12-B2 1ED020I12-BT 2ED020I12-FI
Configuration Single Dual Single Single Single Half-bridge
Package (all 300mil) DSO-16 DSO-36 DSO-16 DSO-16 DSO-16 DSO-18
Galvanic Isolation Functional Functional Functional UL 1577;
VDE 0884-10
UL 1577;
VDE 0884-10
Functional
on high-side
Protection function DESAT, UVLO DESAT, UVLO DESAT, UVLO,
Two-level turn-o
DESAT, UVLO DESAT, UVLO,
Two-level turn-o
UVLO, OPAMP,
comparator
Input 4.1 V/3.8 V 4.1 V/3.8 V 4.1 V/3.8 V 4.1 V/3.8 V 4.1 V/3.8 V 12 V/11 V
Output 12 V/11 V 12 V/11 V 12 V/11 V 12 V/11 V 12 V/11 V 12 V/11 V
DESAT charge current 500 µA 500 µA 500 µA 500 µA 500 µA No
Typical propagation delay 170 ns 170 ns 170 ns + TLTO 170 ns 170 ns + TLTO 85 ns
www.infineon.com/gdisolated
EiceDRIVER™ highlight products
Key features
Desaturation detection
Active Miller clamp
100 kV/μs CMTI
Short circuit clamping and active shutdown
Combinable Enable/Shutdown and Fault Feedback signals
Bipolar output supply
Inverting and non-inverting inputs
Key benefits
Protect the power switch from damage during short circuit condition
Small space-saving package with large creepage distance (>8 mm)
Avoids wrong switching patterns in rugged environments
No external filter needed, cost saving and robustness
Higher dynamic range in PWM modulation and shorter deadtime
Suitable for operation at high ambient temperature
Higher robustness in rugged environments
303
For more details on the product,
click on the part number.
Infineon’s EiceDRIVER™ 1ED Compact family now includes the 1ED-X3 Compact family, which is recognized under
UL 1577 (pending) with an insulation test voltage of VISO = 5000 V(rms) for 1 min. 1EDC Compact 300 mil family is recognized
under UL 1577 with an insulation test voltage of VISO = 2500 V(rms) for 1 min. The functional isolated EiceDRIVER™ 1EDI
Compact 150 mil and 300 mil families are also available. The EiceDRIVER™ 1ED Compact family is the perfect driver for
superjunction MOSFETs such as CoolMOS™, IGBTs, silicon carbide (SiC) MOSFETs such as CoolSiC™, and IGBT modules.
Features and benefits
Evaluation board
EVAL-1EDC20H12AH-SIC
EVAL-1EDI60I12AF
EVAL-1ED3121MX12H *
EVAL-1ED3122MX12H *
EVAL-1ED3124MX12H *
Key components:
› CoolSiC™ 1200 V IMZ120R045M1
› TRENCHSTOP™ 5 IGBT IKW50N65F5
› 1ED31xx with IGBT Highspeed 3 1200 V
IKQ75N120CH3
Key components:
EVAL1EDC20H12AHSICTOBO1
EVAL1EDI60I12AFTOBO1
EVAL1ED3121MX12HTOBO1
EVAL1ED3122MX12HTOBO1
EVAL1ED3124MX12HTOBO1
www.infineon.com/1EDcompact
EiceDRIVER™ 1ED Compact
1200 V single-channel, isolated driver family with active Miller clamp or separate output
Simplified application diagram
Separate sink/source outputs Active Miller clamp
+5 V
+15 V
SGND
100n
VCC1 OUT+ 10R
1μ
3R3
OUT-
VCC2
GND2
GND1
IN+
IN-
IN
+5 V
+15 V
SGND
100n
VCC1 OUT+ 10R
1μ
CLAMP
VCC2
GND2
GND1
IN+
IN-
IN
1ED Compact, 1200 V, DSO-8, Separate sink/source outputs
150 mil 1EDI60I12AF 1EDI40I12AF 1EDI20I12AF 1EDI05I12AF 1EDI60N12AF 1EDI20N12AF
150 mil Certified 1ED3124MU12F *
300 mil 1EDI60I12AH 1EDI40I12AH 1EDI20I12AH 1EDI05I12AH 1EDI60H12AH 1EDI20H12AH
300 mil Certified 1EDC60I12AH 1EDC40I12AH 1EDC20I12AH 1EDC05I12AH
1ED3131MU12H * 1ED3123MU12H *
1ED3124MU12H *
1ED3120MU12H *
1ED3121MU12H *
1EDC60H12AH 1EDC20H12AH
Typ. output current [A] ±10 ±7.5 ±4 ±1.3 ±3 ±9 ±3 ±10 ±4
Prop. delay [ns] 300 300 300 300 280 100 100 125 125
Recommendation
1) All 650 V and 1200 V IGBT discrete and modules 2) All 650 V and 1200 V IGBT discrete and modules, SiC MOSFETs
1ED Compact, 1200 V, DSO-8, Combined output with active Miller clamp
150 mil 1EDI30I12MF 1EDI20I12MF 1EDI10I12MF
150 mil Certified 1ED3125MU12F *
300 mil 1EDI30I12MH 1EDI20I12MH 1EDI10I12MH
300 mil Certified 1ED3122MU12H * 1EDC30I12MH 1EDC20I12MH 1EDC10I12MH
Min. output current [A] ±6 ±6 ±4 ±2.2
Prop. delay [ns] 100 300 300 300
Recommendation 2) All 650 V and 1200 V IGBT discrete
and modules, SiC MOSFETs
1) All 650 V and 1200 V IGBT modules
EiceDRIVER™ highlight products
* Coming soon
Perfect for driving SiC MOSFET
Key features
DSO-8 300 mil wide body package with 8 mm creepage distance
Up to 10 A typical peak rail-to-rail output
200 kV/μs CMTI
Active Miller clamp or separate output
15 ns propagation delay matching
Short circuit clamping and active shutdown
UL 1577 pending (VISO = 5 kV (rms))
Key benefits
Small space-saving package with large creepage distance (>8 mm)
No external filter needed, cost saving and robustness
Avoids wrong switching patterns in rugged environments
Optimized pinout for low inductance power supply
Higher dynamic range in PWM modulation and shorter deadtime
Higher robustness in rugged environments
Suitable for operation at high ambient temperature
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
304
For more details on the product,
click on the part number.
EiceDRIVER™ Enhanced 1ED34xx (X3 analog)
and 1ED38xx (X3 digital) *
1200 V single-channel, isolated driver family with DESAT and so-o and I2C configurability
The X3 Analog (1ED34x1Mx12M) family and X3 Digital (1ED38x0Mx12M) include galvanic-isolated single-channel gate
driver ICs in a small DSO-16 fine pitch package with a large creepage and clearance of 8 mm. The gate driver ICs provide
a typical peak output current of 3 A, 6 A and 9 A. The precision DESAT function for IGBT is also an excellent solution for
SiC MOSFET short-circuit protection. Both X3 analog and digital families provide active Miller clamp, so-o, separate
sink and source output. The 1ED34x1Mx12M analog family provides adjustable DESAT filter time and adjustable So-
o current level functionality. The 1ED38x0Mx12M digital family provide I2C configurability for multiple parameters
including DESAT, so-o, UVLO, active Miller clamp, overtemperature shutdown, two-level turn-o through soware.
Protection
› Reliable short-circuit detection via accurate desaturation
(DESAT) detection circuits (current source and
comparator) protects the power switches from damage
during short-circuit condition
› Two-level turn-o (TLTO) for short-circuit current
protection to lower collector-emitter voltage overshoot
› Active Miller clamping option protects against parasitic
turn-on due to high dV/dt
› Built-in short-circuit clamping limits the gate voltage
during short circuitEvaluation board available: EVAL-1ED3491Mx12M *
Simplified application diagram
Features and benefits
+15 V
+3V3
RD
YC
FL
T_N
SGND
10k
10k
100n
Analog
VCC1
1μ
1R
1k
VEE2
VCC2
GND2
CLAMP
OFF
ON
DESAT
GND1
RDYC
IN
FLT_N
ADJA
ADJB
IN
1R
+15 V+3V3
RDYC
FLT_N
SCL
SDA
SGND
10k
10k
100n
Digital
VCC1
1μ
1R
1k
VEE2
VCC2
GND2
CLAMP
OFF
ON
DESAT
GND1
RDYC
IN
FLT_N
SCL
SDA
IN
1R
www.infineon.com/gdisolated
+15 V
9 V
VD
ID
CDESAT
RDESAT DDESAT
V
CE
VCC2
DESAT
Logic
DESAT protection
OUT
GND2
EiceDRIVER™ highlight products
*Coming soon
Key features
Adjustable DESAT and Adjustable So-o
High number of configuration capabilities through I2C interface
100 kV/μs CMTI
Active Miller clamp or clamp driver
Separate source/sink output pins
Short circuit clamping and active shutdown
VDE 0884-11 planned (VIORM = 1.4 kV)
UL 1577 pending (VISO = 5 kV (rms))
Key benefits
Optimized short circuit control for 3-level inverters
Flexible design
Avoids wrong switching patterns in rugged environments
Small space-saving package with large creepage distance (>8 mm)
No external filter needed, cost saving and robustness
Higher dynamic range in PWM modulation and shorter deadtime
Suitable for operation at high ambient temperature
Higher robustness in rugged environments
305
For more details on the product,
click on the part number.
EiceDRIVER™ Enhanced 1ED34xx (X3 analog)
and 1ED38xx (X3 digital) *
1200 V single-channel, isolated driver family with DESAT and so-o and I2C configurability
EiceDRIVER™ 1EDS-SRC
1200 V single-channel, isolated driver family with slew-rate control
The new EiceDRIVER™ slew-rate control (SRC) family serves the latest generation of highly eicient low-EMI electric drive
systems with improved eiciency. This is the first high-voltage isolated gate driver on the market with dynamic slew-rate
control (SRC) which allows on-the-fly dV/dt control of electric drives through precise gate current control, providing the
best trade-o between minimum power dissipation and minimum EMI depending on operating conditions.
Features and benefits
www.infineon.com/SRC
Simplified application diagram
RSOFF
ROFF
VCC2
T1
Control unit
5V
5V
GND
RS
RPRB2
T2
RDESAT
DDESAT
RF
CDESAT
CF
C3 C2
VCC2
RD
CD
C1
DESAT
RDY2
RDY1
CS
/FLT
GATE
ON
GND2
VZ
VCC2
OFF
CZ
RSENSE
VEE2
SOFF
OCOFF
INP
SPEED
SIGI
SIGO
VCC1
INN
PADP
EN
PADN
GND1
PRB
RPRB1
Feature – real-time gate current control
Eect – gate turn-on tunable across a very large dV/dt range:
Time
I
GATE
[A]
Adjustable gate current
Preboost phase
SRC controlled
gate current in 11 levels
-1.5
-1
-0.5
-3.5
0
-2
-2.5
-3
-4
2000
IC [A]
dV/dt [kV/µs]
400 600 800 1000
dV/dt = f(IC, 25°C, VSPEED)
Adjustable
dV/dt range
Minimum speed
Maximum speed
Part Number Isolation rating
1EDS20I12SV Isolation according VDE 0884-10 (VIORM= 1420 V) and
UL 1577 certified with VISO= 5 kV (rms) for 1 min
1EDU20I12SV UL 1577 certified with VISO= 5 kV (rms) for 1 min
1EDI20I12SV Functional isolation
Evaluation board
EVAL-1EDS20I12SV
Key components:
› Isolated gate driver with slew rate control
(1EDS20I12SV)
› Suitable for EconoDUAL™3 module FF600R12ME4
(module is not delivered with board)
Order code:
EVAL1EDS20I12SVTOBO2
EiceDRIVER™ highlight products
Key features
Real-time adjustable gate current control
Desaturation detection
Overcurrent protection for sense IGBTs and conventional IGBTs
So turn-o shutdown: 1 A pull down to rail
Two-level turn-o
Key benefits
Low EMI during low load conditions and high eiciency during high load conditions
Reduction or elimination of dV/dt filter
Drive power modules up to 900 A
Drive 1200 V single-channel IGBT driver
Unique: NPC1 short circuit protection for three-level inverters
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
306
For more details on the product,
click on the part number.
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Industrial and general purpose gate driver ICs
Infineon's gate driver IC solutions are the expert's choice. With more than 500 reliable and eicient gate driver solutions,
we provide a comprehensive portfolio for virtually any application. Addressing various application requirements,
Infineon delivers solutions with an assortment of gate driver topologies, voltage classes, drive capability, features and
package options to optimize performance, minimize size and reduce cost. Some discrete gate driver ICs are also available
in bare die. The table below shows additional gate driver IC features available in the current portfolio.
Infineon's industrial and general purpose gate driver ICs utilize the following technologies:
› (1) Coreless transformer technology (CT)
› (2) Level-shiing silicon-on-insulator technology (SOI)
› (3) Level-shiing junction-isolation technology (JI)
› (4) Non-isolated technology (N-ISO)
Features Abbreviation Benefits
Active Miller clamp M-CLAMP Protection against inadvertent dynamic turn-on because of parasitic Miller eects
Active shutdown SD-ACT
Ensures a safe IGBT o-state in case the output chip is not connected to the power supply or an undervoltage lockout is in eect
Brake chopper BRAKE Integrated brake IGBT driver with protection
Comparator CMP General purpose comparator included
Current sense CS
Senses the motor phase current through an external shunt resistor, converts from analog to digital signal, and transfers the signal to the low side
Dedicated JFET control JFETDRIVE Optimized to drive SiC JFET
Desaturation protection DESAT Protects the IGBT at short circuit
Enable EN Dedicated pin terminates all outputs
Fault reporting FAULT-RPT Indicates an overcurrent or undervoltage shutdown has occurred
Fault reset FAULT-RST Dedicated pin resets the DESAT-FAULT-state of the chip
High-voltage start-up HVSTART Provides easy and fast circuit start-up while enabling low circuit standby losses
Integrated bootstrap diode BSD Integrated bootstrap reduces BOM
Operational amplifier OPAMP An independent op-amp for current measurement or overcurrent detection
Self-oscillating (oscillator) OSC Integrated front end oscillator
Overcurrent protection (ITRIP) OCP Ensures safe application operation in case of overcurrent
Overtemperature shutdown SD-OT Internal overtemperature protection circuit protects the IC against excessive power loss and overheating
Programmable dead time DT-PROG Dead time is programmable with external resistor for flexible design
Programmable fault clear time FLTC The length of the fault clear time period (tFLT C) is programmed by external capacitor which connected between FLTC and VSS (CFLTC).
Programmable shutdown SD-PROG A shutdown feature has been designed into a pin
Separate pin for logic ground SEP-GND Dedicated pin or logic ground for improved noise immunity
Separate sink/source outputs SEP-OUT Simplifies gate resistor selection, reduces BOM, and improves dV/dt control
Shoot-through protection STP Additional shoot-through protection logic such as interlock
Short-circuit clamping SC-CLAMP During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An additional protection circuit connec-
ted to OUT+ limits this voltage to a value slightly higher than the supply voltage.
Shutdown SD Dedicated pin disables the IC outputs
So overcurrent shutdown SD-SOFT Dedicated pin turns o the desaturated transistor, preventing overvoltages
Truly dierential inputs TDI ±70 VDC and ±150 VAC ground-shi robustness of low-side gate driver ICs
Two-level turn-o TLTO Lowers VCE overshoots at turn-o during short circuits or overcurrent events
UL 1577 UL Double galvanic isolation certification
Undervoltage lockout UVLO Ensures safe application operation by avoiding unexpected driver behavior at low voltages
VDE 0884-10 or VDE 0884-11 VDE Reinforced galvanic isolation certifications for non-optical couplers
Infineon gate driver IC technologies
Non-isolated Level-shi Galvanic isolation
Low voltage Junction isolation Silicon on insulator Coreless transformer
›Comprehensive families
of single- and dual-low-side
drivers with flexible output
current, logic configurations,
and UVLOs
›Rugged technology of the high-
voltage gate drivers, and the
state-of-the-art 130-nm process
›20 years proven technology
›Largest portfolio of 200 V, 600 V,
700 V and 1200 V industry stan-
dard gate drivers using rugged
proprietary HVIC process
›Infineon SOI technology
for high-voltage applications
with inherent integrated
bootstrap diode capability
and lower level-shi losses
› Industry best-in-class
robustness against negative
VS transient spikes
›Magnetically-coupled isolation
technology provides galvanic
isolation (functional, basic and
reinforced)
›Strongest gate-drive output
currents (up to 10 A) reducing
need for external booster circuits
307
For more details on the product,
click on the part number.
Gate driver ICs portfolio
www.infineon.com/gatedriver www.infineon.com/gdfinder
Product overview
To ease the selection process, this overview is structured along the configurations of the gate driver ICs, as opposed to
by application topology.
* Coming soon
* *
For more information on the product, contact our product support
Half-bridge gate driver ICs
Technology
Comparator
Operational amplifier
Desaturation protection
Enable
Fault reporting
Integrated bootstrap diode
Over-current protection
Programmable dead time
Programmable shutdown
Self-oscillating (oscillator)
Separate pin for logic ground
Shoot-through protection
Shutdown
So over-current shutdown
DSO-8
DSO-14
DSO-16
DSO-16 WB
DSO-18
DIP-8
DIP-14
SSOP-24
VDSON-8
VQFN-14
CHIP1
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO on/o
typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Packag
1200 1500/2500 12.2/11.2 85/85 2ED020I12-FI CT ✓ ✓ ✓ ✓ ✓
2000/3000 10.2/9.3 440/440 IR2214SS JI ✓ ✓ ✓ ✓ ✓ ✓
650
2500/2500
9.1/8.2 200/200
2ED2182S06F NEW SOI ✓ ✓ ✓ ✓
2ED21824S06J NEW SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2183S06F NEW SOI ✓ ✓ ✓ ✓
2ED21834S06J NEW SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2184S06F NEW SOI ✓ ✓ ✓ ✓ ✓
2ED21844S06J NEW SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
290/700
2ED2108S06F NEW SOI ✓ ✓ ✓ ✓
2ED21084S06J NEW SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2109S06F NEW SOI ✓ ✓ ✓ ✓ ✓
2ED21094S06J NEW SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
2ED21091S06F NEW SOI ✓ ✓ ✓ ✓ ✓ ✓
360 / 700 9.1 / 8.3 300/310 2ED2304S06F NEW SOI ✓ ✓ ✓ ✓
1500/2500 12.2/11.2 85/85 2ED020I06-FI CT ✓ ✓ ✓ ✓
20/80 8.9/7.7 530/530
2ED28073J06 * *
NEW JI ✓ ✓ ✓
290/600 8.9/8 90/90 2ED2103S06F * * SOI ✓ ✓ ✓ ✓
2ED2104S06F * * SOI ✓ ✓ ✓ ✓ ✓
600
78/169 8.9/8.2 220/220 IR2304 JI ✓ ✓ ✓
8.9/8.2 IR25601S JI ✓ ✓
180/260
9/8
N.A.
IR21531 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
9/8 IR21531D JI ✓ ✓ ✓ ✓ ✓ ✓
9/8 IR25603 JI ✓ ✓ ✓ ✓ ✓ ✓
11/9
IRS2153D
,
IRS21531D
JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
200/350 8.9/8.2
200/220
IR2108 JI ✓ ✓ ✓
IR21084 JI ✓ ✓ ✓ ✓ ✓
IR2308 JI ✓ ✓ ✓
IR25606S JI ✓ ✓
200/750
IR2109 JI ✓ ✓ ✓ ✓
IR21091 JI ✓ ✓ ✓ ✓ ✓
IR21094 JI ✓ ✓ ✓ ✓ ✓ ✓
4.1/3.8 IR2302 JI ✓ ✓ ✓ ✓
210/360 8.9/8.2 150/680 IR2103 JI ✓ ✓ ✓
8.9/8.2 IR2104 JI ✓ ✓ ✓ ✓
8.9/8.2 IR25602S JI ✓ ✓ ✓
220/480 8.9/7.7 500/500 IRS2890DS NEW JI ✓ ✓ ✓ ✓ ✓
250/500 8.6/8.2 150/750 IR2111 JI ✓ ✓ ✓
290/600
8.9/8.2 150/150 IRS2304 JI ✓ ✓ ✓ ✓
8.9/8.2 150/680 IRS2103 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS2104 JI ✓ ✓ ✓ ✓ ✓
8.6/8.2 150/750 IRS2111 JI ✓ ✓ ✓ ✓
8.9/8.2 200/220 IRS2108
IRS2308 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS21084 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 200/750 IRS2109 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS21091 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS21094 JI ✓ ✓ ✓ ✓ ✓ ✓
360/700 9.1/8.3 300/310 2EDL05N06PF ,
2EDL05N06PJ SOI ✓ ✓ ✓ ✓
12.5/11.6 400/420 2EDL05I06PF ,
2EDL05I06PJ SOI ✓ ✓ ✓ ✓
1900/2300
8.9/8.2
220/180
IRS2183 JI ✓ ✓ ✓ ✓
8.9/8.2 IR2183 JI ✓ ✓ ✓
8.9/8.2 IRS21834
IR21834 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2
270/680
IRS2184 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IR2184 JI ✓ ✓ ✓ ✓
8.9/8.2 IR21844 JI ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS21844 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
2000/3000 10.2/9.3 440/440 IR2114SS JI ✓ ✓ ✓ ✓ ✓ ✓
2300/2800 9.1/8.3 300/310 2EDL23N06PJ SOI ✓✓✓✓ ✓✓ ✓
12.5/11.6 400/420 2EDL23I06P SOI ✓✓✓✓ ✓✓ ✓
200 290/600 8.9/8.2 150/160 IRS2007M ,
IRS2007S NEW JI ✓ ✓ ✓
150/680 IRS2008M ,
IRS2008S NEW JI ✓ ✓ ✓ ✓
120 2000/6000 7/6.5 47/47 2EDL8112G * JI ✓ ✓ ✓
3000/6000 2EDL8113G * JI ✓ ✓ ✓
4000/6000 2EDL8114G * JI ✓ ✓ ✓
VCC VB
IN HO
VS
Up to 1200 V
SD
V
CC
COM LO
IN
To loadSD
Typical connection
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
308
For more details on the product,
click on the part number.
High-side and low-side gate driver ICs
Technology
Integrated bootstrap diode
Separate pin for logic ground
Shutdown
DSO-8
DSO-14
DSO-16 WB
DIP-8
DIP-14
VQFN-14
CHIP1
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO on/o
typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Package
1200 2000/2500 10.2/9.3 225/280 IR2213 JI ✓ ✓ ✓ ✓ ✓
650
290/700
9.1/8.2 200/200
2ED2106S06F NEW SOI ✓ ✓ ✓
2ED21064S06J NEW SOI ✓ ✓ ✓
2500/2500 2ED2181S06 NEW SOI ✓ ✓ ✓
2ED21814S06J NEW SOI ✓ ✓ ✓
290/600 8.9/8 90/90 2ED2101S06 * SOI ✓ ✓ ✓
2500/2500 2ED2110S06 * SOI ✓ ✓ ✓ ✓ ✓
2ED2113S06 * SOI ✓ ✓ ✓ ✓ ✓
600
200/350
8.9/8.2
200/220
IR2106 JI ✓ ✓
8.9/8.2 IR21064 JI ✓ ✓ ✓
4.1/3.8 IR2301 JI ✓ ✓
8.9/8.2 IR25604S JI ✓
4.1/3.8 IR25607S JI ✓
210/360 8.9/8.2 150/160 IR2101 JI ✓✓✓
IR2102 JI ✓ ✓
250/500 8.6/8.2 105/125 IR2112 JI ✓ ✓ ✓
290/600
8.6/8.2 130/135 IRS2112 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 150/160 IRS2101 JI ✓✓✓
8.9/8.2 200/220 IRS2106 JI ✓✓✓
8.9/8.2 IRS21064 JI ✓ ✓ ✓
360/700 12.5/11.6 400/420 2EDL05I06BF SOI ✓ ✓
1900/2300
8.9/8.2
220/180
IRS2181 JI ✓✓✓
8.9/8.2 IR2181 JI ✓ ✓
8.9/8.2 IR21814 JI ✓ ✓ ✓
8.9/8.2 IRS21814 JI ✓ ✓ ✓ ✓
2500/2500
8.6/8.2 94/120 IR2113 JI ✓ ✓ ✓ ✓ ✓
8.6/8.2 IR25607S JI ✓ ✓ ✓
8.5/8.2 120/130 IRS2113 JI ✓ ✓ ✓ ✓ ✓ ✓
4000/4000
8.9/8.2
170/170
IRS2186 JI ✓✓✓
8.9/8.2 IRS21864 JI ✓ ✓ ✓
6/5.5 IRS21867S JI ✓
500 2500/2500 8.6/8.2 94/120 IR2110 JI ✓ ✓ ✓ ✓
8.5/8.2 120/130 IRS2110 JI ✓ ✓ ✓ ✓ ✓
200
290/600 8.9/8.2 150/160 IRS2005S ,
IRS2005M JI ✓ ✓
1000/1000 9/8.2 60/60 IRS2011 JI ✓✓✓
9/8.2 75/80 IR2011 JI ✓ ✓
3000/3000 8.6/8.2 65/95 IR2010 JI ✓ ✓ ✓ ✓
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
*Coming soon
* *
For more information on the product, contact our product support
Typical connection
LIN VS
COM LO
VCC VB
HIN HO
To loa
d
LIN
HIN
V
CC
Up to 1200 V
309
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click on the part number.
Gate driver ICs portfolio
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* *
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Three-phase gate driver ICs
Base PN
Technology
Brake chopper
Operaltional amplifier
Desaturation protection
Enable
Fault reporting
Integrated bootstrap diode
Over-current protection
Programmable dead time
Separate pin for logic ground
Shoot-through protection
Shutdown
DSO-20 WB
DSO-24
DSO-28 WB
DIP-28
LCC-32
MQFP-64
TSSOP-28
VQFN-28
VQFN-34
CHIP1
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO
on/o typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Package
1200
350/650 11.4/10.4 600/600 6ED2230S12T NEW SOI ✓✓✓✓✓ ✓ ✓
250/500 8.6/8.2 700/750 IR2233 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
10.4/9.4 IR2235 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
350/540 11.2/10.2 550/550 IR2238Q JI ✓✓✓✓✓✓ ✓
600
165/375
11.7/9.8
490/530
6ED003L06-F2 SOI ✓ ✓ ✓ ✓ ✓ ✓
11.7/9.8 6EDL04I06NT ,
6EDL04I06PT SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
9/8.1 530/530 6EDL04N06PT SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
200/350
8.9/8.2
400/425
IR2136 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
11.1/10.9 IR21363J ,
IR21363S JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
11.1/10.9 IR21365S JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IR21368S JI ✓ ✓ ✓ ✓ ✓ ✓
10.4/9.4 530/500 IR21364S JI ✓ ✓ ✓ ✓ ✓ ✓
11.1/10.9
530/530
IRS2334M ,
IRS2334S JI ✓ ✓
8.9/8.2 IRS2336S JI ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2
IRS2336DJ ,
IRS2336DM ,
IRS2336DS
JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS23364DJ ,
IRS23364DS JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS23365DM JI ✓ ✓ ✓ ✓ ✓ ✓
250/500
9/8.7 425/675 IR2130, IR2132 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.7/8.3 600/1300 IR2131 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.6/8.2 700/750 IR2133 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
10.4/9.4 IR2135J , IR2135S JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
200 165/375 11.7/9.8 490/530 6ED003L02-F2 SOI ✓ ✓ ✓ ✓ ✓
9/8.1 530/530 6EDL04N02PR SOI ✓ ✓ ✓ ✓ ✓ ✓
EN
FAULT
RCIN
VCC
HIN
LIN
ITRIP
VB (x3)
HO (x3)
VS (x3)
LO (x3)
VSS COM
To
load
DC+ bus
DC- bus
Typical connection
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
310
For more details on the product,
click on the part number.
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
SRC=Turn on slew rate control
* Coming soon
* *
For more information on the product, contact our product support
Single high-side gate driver ICs
Typical Connection
Technology
Active Miller clamp
Analog configurability(Desat, so-o)
Digital I2C configurability(16 parameters)
Dedicated control for JFET
Desaturation protection
Enable
Fault reporting
Fault reset
Over-current protection
Separate pin for logic ground
Separate sink/source outputs
So over-current shutdown
Two-level turn-o
UL 1577
VDE 0884-10
DSO-8
DSO-8 300mil
DSO-16 fine pitch 300 mil
DSO-16
DSO-16 WB
DSO-19
DSO-36
DIP-8
SOT23-6
TFLGA-13
CHIP1
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO on/o
typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Digital I2C configurability
(16 parameters)
1200
1300/900 12/11.1 300/300
1EDI05I12AF ,
1EDI05I12AH CT ✓ ✓ ✓ ✓
1EDC05I12AH CT ✓ ✓ ✓ ✓
2000/2000 12/11
165/170 1ED020I12-F2 CT ✓ ✓ ✓ ✓ ✓ ✓
1ED020I12-B2 CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
1750/1750 1ED020I12-FT CT ✓ ✓ ✓ ✓ ✓ ✓ ✓
1ED020I12-BT CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
2200/2300 12/11.1 300/300
1EDI10I12MF ,
1EDI10I12MH CT ✓ ✓ ✓ ✓
1EDC10I12MH CT ✓ ✓ ✓ ✓
3000/3000
10/8 100/100 1ED3120MU12 * CT ✓ ✓ ✓ ✓
12.5/10.5
1ED3121MU12 * CT ✓ ✓ ✓ ✓
280/280 1ED3131MU12 * CT ✓ ✓ ✓ ✓
232/232 1ED3431MU12 * * NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
1ED3830MU12 * * NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
4000/3500
9.1/8.5 120/115 1EDI20N12AF CT ✓ ✓ ✓
12/11.1
125/120 1EDI20H12AH CT ✓ ✓ ✓
1EDC20H12AH CT ✓ ✓ ✓ ✓
300/300
1EDI20I12AF ,
1EDI20I12AH CT ✓ ✓ ✓ ✓
1EDC20I12AH CT ✓ ✓ ✓ ✓
4400/4100
1EDI20I12MH ,
1EDI20I12MF CT ✓ ✓ ✓ ✓
1EDC20I12MH CT ✓ ✓ ✓ ✓
4000/4000 16.9/16.4 80/80 1EDI30J12CP CT ✓ ✓ ✓
6000/6000
10/8 100/100 1ED3122MU12 * CT ✓ ✓ ✓ ✓
12.5/10.5 1ED3125MU12 * CT ✓ ✓ ✓
232/232 1ED3461MU12 * * NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
1ED3860MU12 * * NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
5900/6200
12/11.1 300/300
1EDI30I12MF ,
1EDI30I12MH CT ✓ ✓ ✓ ✓
1EDC30I12MH CT ✓ ✓ ✓ ✓
7500/6800
1EDI40I12AH ,
1EDI40I12AF CT ✓ ✓ ✓ ✓
1EDC40I12AH CT ✓ ✓ ✓ ✓
SRC/2000 11.9/11 460/460 1EDI20I12SV NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
SRC/2000 11.9/11 460/460 1EDU20I12SV NEW CT ✓✓✓ ✓✓ ✓✓✓ ✓
SRC/2000 11.9/11 460/460 1EDS20I12SV NEW CT ✓✓✓ ✓✓ ✓✓✓✓ ✓
9000/9000
10/8 100/100 1ED3123MU12 * CT ✓ ✓ ✓ ✓
12.5/10.5 1ED3124MU12 * CT ✓ ✓ ✓ ✓
232/232 1ED3491MU12 * * NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
1ED3890MU12 * * NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
10000/9400 12/11.1
125/120 1EDI60H12AH CT ✓✓ ✓ ✓
1EDC60H12AH CT ✓ ✓ ✓
300/300
1EDI60I12AF ,
1EDI60I12AH CT ✓ ✓ ✓ ✓
1EDC60I12AH CT ✓ ✓ ✓ ✓
600
160/240 9/8 215/140 IRS25752L JI ✓
250/500
8.6/8.2 105/125 IR2117 JI ✓ ✓ ✓
IR2118 JI ✓ ✓
10.3/9 150/200 IR2127 , IR2128 JI ✓ ✓ ✓ ✓ ✓
7.2/6.8 IR21271 JI ✓ ✓ ✓ ✓
290/600
8.6/8.2 105/125 IRS2117 , IRS2118 JI ✓ ✓ ✓
10.3/9 150/150 IRS2127 JI ✓ ✓ ✓ ✓ ✓
7.2/6.8 IRS21271 JI ✓ ✓ ✓ ✓ ✓
500 1600/3300 9.2/8.3 200/170 IR2125 JI ✓ ✓ ✓ ✓
200 160/240 9/8 215/140 IRS20752L JI ✓
100 IRS10752L JI ✓
650 4000/8000 4.5/5.0 41/37 1EDS5663H CT ✓ ✓ ✓
4000/8000 4.5/5.0 41/37 1EDF5673F CT ✓
250 4000/8000 4.5/5.0 41/37 1EDF5673K CT ✓
to loa
d
Up to 200 V
V
CC
VCC
COM
IN
VB
HO
VS
IN
Typical connection
311
For more details on the product,
click on the part number.
Gate driver ICs portfolio
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* Coming soon
* *
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Dual high-side/half-bridge a
Technology
Active Miller clamp
Deadtime control
Desaturation protection
Disable
Fault reporting
Fault reset
Separate pin for logic ground
UL 1577
VDE 0884-10
DSO-16
DSO-16 WB
DSO-36 (w/o 4 pins)
TFLGA-13
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO on/o
typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Package
1200 2000/2000 12/11 165/170 2ED020I12-F2 CT ✓ ✓ ✓ ✓ ✓ ✓
650
4000/8000 4.2/3.9
37 / 37
2EDF7275F CT ✓ ✓
1000/2000 2EDF7175F CT ✓ ✓
4000/8000 8/7 2EDS8265H CT ✓ ✓ ✓ ✓
1000/2000 2EDS8165H CT ✓ ✓ ✓ ✓
250 4000/8000 4.2/3.9 2EDF7235K CT ✓ ✓
2EDF7275K CT ✓ ✓ ✓
Typical connection
VSS
VB 2
NC
HO 2
NC
VS 2
Up to 1200 V
Up to 1200 V
To load
IN 2
VDD
HIN 1
HIN 2
VCC
COM
NC
NC
VB 1
HO 1
VS 1
To load
15 V
IN 1
5 V
Single low-side gate driver ICs
Technology
Automatic minimum on time protection
Enable
Fault reporting
Over-current protection
Programmable fault clear time
Programmable minimum on time
Separate sink/source outputs
Synchronous rectification
Truly dierential inputs
DSO-8
DIP-8
SOT23-5
SOT23-6
WSON-6
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO
on/o typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Package
200
1000/4000 10.55/9 50/60 IR11662 N-ISO
2000/7000 10.55/9 50/60 IR11672A N-ISO ✓ ✓ ✓ ✓ ✓
1000/2500 4.5/4.4 50/50 IR1161L N-ISO ✓ ✓ ✓ ✓
80 4000/8000 4.2/3.9 45 / 45 1EDN7550 NEW N-ISO ✓ ✓
8/7 45 / 45 1EDN8550 NEW N-ISO ✓ ✓
25
2600/2600 8/7.3 34/34 1ED44173N01 * * NEW N-ISO ✓ ✓ ✓ ✓
11.9/11.4 50/50 1ED44175N01 NEW N-ISO ✓ ✓ ✓ ✓
800/1750 11.9/11.4 50/50 1ED44176N01F NEW N-ISO ✓✓✓✓ ✓
1500/1500 10.2/9.2 50/50 IRS44273L N-ISO ✓
20
300/550 5/4.15 50/50 IR44252L N-ISO ✓
1700/1500 5/4.15 50/50 IR44272L N-ISO ✓ ✓
5/4.15 IR44273L N-ISO ✓
4000/8000
4.2/3.9
19/19
1EDN7511B N-ISO ✓
8/7 1EDN8511 N-ISO ✓
4.2/3.9 1EDN7512B , 1EDN7512G N-ISO ✓ ✓
5 1600/3300 8.9/8 200/150 IR2121 N-ISO ✓ ✓ ✓
Typical connection
To load
VCC
COM
IN
OUT
IN
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
312
For more details on the product,
click on the part number.
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Dual low-side gate driver ICs
Technology
Automatic minimum on time protection
Enable
Programmable minimum on time
Synchronous rectification
DSO-8
DIP-8
WSON-8
TSSOP-8
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO
on/o typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Package
200
1000/4000 8.1/7.6 70/60 IR1168 N-ISO ✓ ✓ ✓
1000/4000 8.1/7.6 80/100 IR11682 N-ISO ✓ ✓ ✓
1000/4000 4.55/4.35 60/250 IR11688S N-ISO ✓ ✓ ✓ ✓
25
1000/1000 11.5/10 55/55 2ED24427N01 * N-ISO ✓ ✓
2300/3300
10.2/9.2
50/50
IRS44262S N-ISO ✓
N.A.
IRS4426S N-ISO ✓
IRS4427 N-ISO ✓ ✓
65/85 IR25600 N-ISO ✓ ✓
IR4426 , IR4427 N-ISO ✓ ✓
20 5000/5000 4.2/3.9 19/19 2EDN7523 , 2EDN7524 N-ISO ✓ ✓ ✓ ✓
8/7 2EDN8523F , 2EDN8523R , 2EDN8524F , 2EDN8524R N-ISO ✓✓✓
4000/4000 4.2/3.9 19/19 2EDN7424R , 2EDN7424F N-ISO ✓✓✓
COM VCC
INB OUTB
NC NC
INA OUTA
To load
INB
INA
To load
Typical connection
Full-bridge gate driver ICs
Technology
Integrated bootstrap diode
Shoot-through protection
Shutdown
Overcurrent protection
Programmable dead time
Self-oscillating (oscillator)
DSO-14
DSO-16
DIP-14
Voltage
class [V]
IO+/IO-
typ. [mA]
UVLO
on/o typ. [V]
Prop delay
o/on typ. [ns] Base PN Features Package
100 1200/1200 7.25/6.8 40/60 IR2086S JI ✓ ✓ ✓ ✓
600 180/260 11/9 N.A. IRS24531DS JI ✓ ✓ ✓ ✓
IRS2453D JI ✓ ✓ ✓ ✓ ✓
Typical connection
RSENSE
IR2086S
CD**
LO1
HO1
VB1
COM2*
VS1
VB2
HO2
VS2
VCC
LO2
*COM2 must be shorted to COM1 for proper operation
**CD is optional
VBUSS (100 VDC MAX.)
DELAY
CS
COM1
CT
RT
CT
VCC (9 ~15 V)
*Coming soon
313
For more details on the product,
click on the part number.
Gate driver ICs portfolio
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www.infineon.com/gdfinder
Complementary: current sense ICs
Technology
Current sense
Overcurrent protection
DSO-8
DSO-16 WB
DIP-8
SOT23-5
Voltage class [V] Base PN Features Package
600 IR2175 JI ✓ ✓ ✓ ✓
IR25750 JI ✓ ✓
Complementary: high-voltage start-up IC
Technology
Enable
High voltage start-up
Overtemperature shutdown
SOT23-5
Voltage class [V] Base PN Features Package
480 IRS25751 N-ISO ✓ ✓ ✓ ✓
Typical connection
OC VS
COM
VCC V+
PO VB
To
motor phase
Overcurrent
COM
PWM out
VCC
Typical connection
DC bus (+)
DC bus (-)
5
4
1
3
VIN
VTH
VOUT
ENN
2
COM
VCC (+)
VCC (-)
R1
R2
CVCC
From AUX
supply
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
314
For more details on the product,
click on the part number.
Gate driver ICs nomenclature
1ED I12 AF60I
Isolation technology
S = reinforced galvanic isolation
B = basic galvanic isolation
I =
functional galvanic isolation
C = UL certified functional galvanic isolation
L = level-shifting (SOI)
N = non-isolated driver
Minimum drive strength
in hundreds of milliamps
Optimal switch Type
H = high-speed IGBT
I = IGBT
J= JFET
N = MOSFET
Package type
F = DSO8-150 mil
H = DSO8-300 mil
Key features
A = separate sink/source
B = Bootstrap diode
D = DESAT
M = active Miller clamp
S = Slew rate control
T = two-level turn-o
Voltage class
06 = 600 V
12 = 1200 V
Number of channels
1 = 1-ch EiceDRIVER™
2 = 2-ch (half-bridge) EiceDRIVER™
6 = 6-ch (3-phase) EiceDRIVER™
AU IR 10 DS21
Technology generation
IR = Gen2 high-voltage driver IC
IRS = Gen5 high-voltage driver IC
Voltage class
20 = 200
V
21 = 600
V
22 = 1200
V
23 = 600
V
26 = 600 V feature adder
44 = low-side driver
Driver type
3 = 3-phase driver
7 = current-sense IC
Other: half-bridge, high-side/low-side, etc.
Package type
S = SOIC
J = PLCC44
M = MLPQ
Q = MFQP
L = SOT-23
B/F = die part
Blank: PDIP
Additional features
D = bootstrap
Blank = without bootstrap
Automotive rating
Naming convention for existing families of gate driver ICs
Nomenclature
315
For more details on the product,
click on the part number.
Gate driver ICs nomenclature
ED 752 4FN
2
ED = EiceDRIVERTM
Isolation class
N = non-isolated
F = functional isolation
B = basic isolation
S = reinforced isolation
UVLO threshold
6 = reserved
7 = ~ 4.2 V
8 = ~ 8 V
9 = reserved
“i” used to
designate any type
of galvanic isolation
{
Package
F = DSO 150 mil, 1.27 mm
H = DSO 300 mil, 1.27 mm
B = SOT-23
G = VDSON
R = TSSOP (“mini DSO-8”)
K = LGA
Control Inputs
3 = inverted
4 = non-inverted
5 = mixed
6 = dierential
Family ID
xx = 2 digits
Number of channels
ED S[x]2304 06 F
2
Product number/voltage
Flexible
Technology indicator
M = Coreless transformer (inductive)
N = Non-isolated driver (low-side drivers)
J = Junction level shifting (non-SOI)
S = Infineon SOI [x] Optional
C = Isolation-certified
S = Reinforced isolation
B = Basic Isolation
U/C = UL 1577-certified
Package type
F = DSO8-150 mil
H = DSO8-300 mil
C = Bare die single chip
J = SO14-150 mil
M = SO16-300 mil
P = SO20-300 mil
R = TSSOP28-140 mil
T = SO28-300 mil
V = SO36-300 mil
Voltage class
01 = <200 V
02 = 200 V
06 = 600 V/650 V
07 = 700 V
12 = 1200 V
16 = 1600 V
17 = 1700 V
Number of channels
1 = 1-ch
2 = 2-ch
(half-bridge, hi/low)
6 = 6-ch (3-phase)
ED = EiceDRIVER™
Naming convention for existing and upcoming families of gate driver ICs
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
316
For more details on the product,
click on the part number.
Gate driver ICs support
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Gate driver selection tool
To simplify the gate driver selection process, Infineon oers an online easy-to-use gate driver selection tool.
By selecting a few key parameters, the tool quickly guides you in finding the right driver for your application.
Click to access the gate driver selection tool
www.infineon.com/gdfinder
For recommended gate drivers by application, visit www.infineon.com/gdapplication to download
the PDF version of the gate driver application matrix.
Home
Appliances
General Air Conditioner
(Residential)
Commercial
Lighting
Electric Tools
(Battery)
Hood Fan/
Ceiling Fan/
Freezer Fan
Power Tools
(AC)
Refrigerator/
Washer/
Dryer
Vacuum
Cleaner
PFC
IRS4427S
IRS44273L
2EDN8524F
IRS44273L
2EDN8524F
1EDN8511B
IRS4427S
IRS44273L
2EDN8524F
SMPS ICE5QR4770AZ
(CoolSET™)
2EDN8524F
IRS4427S
IRS2153(1)D
DC-DC 1EDI20N12AF
Inverter
(<1 kW)
6EDL04I06PT
IR2136S
IRS2890DS
2ED2304S06F
6EDL04N02PR
IRS2007S
IRS2301S
6EDL04I06PT
IR2136S
2ED2304S06F
6EDL04I06PT
IR2136S
2EDL05I06PF
6EDL04I06PT
IRS2890DS
2ED2304S06F
Inverter
(<3 kW)
IR2235
2EDL23I06PJ
IR2214SS
SR Motor
Inverter
2EDL05I06PF
IRS2181(4)
IRS2890DS
Half-bridge
Topology
2EDL05N06PF
2ED2304S06F
IRS2153(1)D
HS-Buck
IRS2117
IRS25752L
IRS20752L
Sync-Buck 2EDL05N06PF
2ED2304S06F
Recommended Gate Drivers
Home Appliances
Discover the next level of power and eiciency
Infineon’s gate driver ICs utilize level-shi silicon-on-insulator technology (SOI), and level-shi junction isolation
technology (JI) to meet the high performance requirements in home appliance applications.
Charger
Mobility &
Battery Driven
Drones/ E-Bike/
E-Scooter
EV Charger/
Battery Charger
General Traction Light Electric
Vehicle (LEV)
Lawn Mower/ Vacuum/
Service Robotics
Inverter
6EDL04N02PR
IRS2334
IRS2007S
IRS2186S
1EDI60I12AF
IR2214SS
IR2213
6EDL04N02PR
IR2136S
2EDL05N06PF
IRS2183
6EDL04N02PR
DC-DC
1EDI20I12AF
1EDI40I12AF
IR2214SS
PFC
IRS4427S
IRS44273L
2EDN7524F
HB (LLC) 1EDI60I12AF
1EDU20I12SV
Sync-Buck IR2010S
BLDC
6EDL04N02PR
IR2136S
IRS2007S
Recommended Gate Drivers
Mobility & Battery Driven
Full range of best-in-class components
From EV charger and light electric vehicle (LEV) to service robotics and drones, Infineon’s family of configurable
half-bridge and three-phase gate driver ICs can be combined with powerful Infineon MOSFETs to provide the
required power and eiciency. Automotive-specific gate drivers qualified according to AEC-Q100 are also available.
For battery-driven applications, saving battery power is the key. Infineon oers an excellent selection of gate
driver ICs providing thehighest-possible energy eiciency and top precision.
Charger
Industrial Air Conditioner
(Commercial)
Automatic Door
Opening Systems
Building Fans &
Pumps
Commercial
Sewing Machine
Drives Forkli Truck/
CAV
UPS
Compressor/
Fan/CAC
1ED020I12-F2
1EDI10I12MF
2ED020I12-F2
Inverter
(<5 kW)
6EDL04I06PT
IR2136S
IRS2103
6EDL04(I,N)06PT
2EDL23I06PJ
IR2214SS
6EDL04I06PT
IR2136S
IRS2334
6EDL04I06PT
IR2133
2EDL23I06PJ
1EDI60I12AF
2EDL23I06PJ
IR7106S
Inverter
(<30 kW)
1EDI30I12MF
1EDI60I12AF
1EDU20I12SV
1EDI40I12AF
1ED020I12-BT
2ED020I12-FI
1EDI60N12AF
2EDL23I06PJ
IRS2127(1)
Inverter
(<200 kW)
1EDI60I12AF
1ED020I12-B2
1EDU20I12SV
1EDU20I12SV
1ED020I12-B2
1EDI60I12AF
1EDI60I12AF
1ED020I12-F2
1EDU20I12SV
PFC
IRS4427S
IRS44273L
2EDN8524F
IRS4427S
IRS44273L
2EDN8524F
DC-DC
(1 kW - 100 kW)
2EDL05N06PJ
2EDL23N06PJ
1EDI20N12AF
1EDI60N12AF
SMPS
2EDN8524F
IR7106S
IRS2186(4)
IRS4427S
IRS44273L
2EDN7524F
Brake Chopper
1EDI05I12AF
1EDI10I12MF
IRS44273L
Active Bridge
Rectifier
2ED020I12-F2
1ED020I12-F2
1ED020I12-FT
Recommended Gate Drivers
Industrial
Reliable, high quality solutions for the most rugged situations
Infineon’s gate driver ICs are the expert’s choice. With the breadth and depth of the portfolio, customers can quickly
design and build eicient and robust systems for every industrial application.
Automatic
opening system
Renewable Energy Heat Pump Solar Inverter
Inverter (<2 kW)
6EDL04I06PT
IR2136S
2ED2304S06F
Inverter (>2 kW)
IR2214SS
IR2213
IR2235
1EDI20I12AF
µInverter Boost
IRS4427S
2EDN7524F
IRS44273L
µInverter DC-AC
2ED2304S06F
IR2114SS
2EDL05N06PJ
String Boost
2EDN8524F
IRS4427S
1EDI20N12AF
String Inverter
1ED020I12-F2
IR7106S
1EDI60N12AF
Central Boost/SMPS 2EDN8524F
1EDI60I12AF
Central Inverter
1EDI60I12AF
1ED020I12-F2
IR2214SS
Recommended Gate Drivers
Renewable Energy
Powering an energy-smart world
Improving eiciency is the number one objective in the field of photovoltaics. Eiciency gains of as little as one percent
can still yield enormous returns in renewable energy segment.
Infineon provides a comprehensive portfolio of high-performance gate driver ICs for photovoltaic inverters. By combining
EiceDRIVER™ with super-junction MOSFETs such as CoolMOS™, IGBTs, Silicon Carbide (SiC) MOSFET such as CoolSiC™,
as well as IGBT and SiC modules, Infineon enables solutions that maximizing uptime and energy production.
317
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Gate driver ICs support
Further information, datasheets and documents
www.infineon.com/gatedriver
www.infineon.com/gdapplication
www.infineon.com/gdiso
www.infineon.com/ifxdesigner
www.infineon.com/crs
www.infineon.com/eicedriver
www.infineon.com/1edn
www.infineon.com/2edn
www.infineon.com/gdbrochure
www.infineon.com/gdfinder
www.infineon.com/SiC-GD
www.infineon.com/TDI
www.infineon.com/200vhvic
www.infineon.com/1EDcompact
www.infineon.com/700vhvic
www.infineon.com/microhvic
www.infineon.com/gan-eicedriver
www.infineon.com/2edi
Infineon support for gate driver ICs
Useful links and helpful information
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
318
For more details on the product,
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› XMC™ micricontrollers
› XMC™ ecosystem, enablement and partners
› XMC™ digital power conversion kits
› XMC™ starter kits
› XMC™ peripherals
› AURIX™ – 32-bit microcontrollers
› AURIX™ TC2xx family system architecture
› AURIX™ TC3xx family system architecture
› AURIX™ starter and application kits
› AURIX™ and XMC™ PDH partners
› Embedded power ICs
› BLDC Motor Control Shield for Arduino
Microcontrollers
319
For more details on the product,
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
320
For more details on the product,
click on the part number.
XMC™ microcontrollers
XMC™
One microcontroller platform – countless solutions
Infineon’s XMC™ 32-bit industrial microcontroller portfolio is designed for eiciency and demanding industrial applications.
XMC™ MCU portfolio
› RAM: 8 kB up to 352 kB
› Flash: 16 kB up to 2 MB
› Accurate analog mixed-signal
peripherals
› Fast timer/PWM peripherals
› Rich communication interfaces
› 16-pin to 196-pin count packages
XMC1000 family
› Arm® Cortex®-M0 up to 48 MHz
› Peripherals up to 96 MHz
› One-time event request unit (ERU)
› VDD: 1.8 to 5.5 V
› TAmbient: -40°C to 105°C
XMC4000 family
› Arm® Cortex®-M4 up to 144 MHz
› Built-in DSP, SFPU
› Peripherals up to 144 MHz
› Event request unit (ERU)
› TAmbient: -40°C to 125°C
www.infineon.com/xmc
XMC1000
Arm® Cortex®-M0
up to 48 MHz core/
96 MHz peripheral
8-200 KB flash
up to 105°C
1.8-5.5 V
XMC4000
Arm® Cortex®-M4F
up to 144 MHz core
64 kB-2 MB Flash
up to 125°C
XMC1100
Basic control and
connectivity
TSSOP-16/38
VQFN-24/40
XMC4100
Basic control and
connectivity
VQFN-48
LQFP-64
XMC™ entry
XMC1200, XMC1300
Flicker-free,
4-Ch LED, SMPS,
connectivity
TSSOP-16/28/38
VQFN-24, -40
XMC1400
Flicker-free,
4-Ch LED, SMPS,
connectivity
VQFN-40/64
LQFP-64
LED lighting
XMC1300
SMPS control,
connectivity,
TSSOP-16/38
VQFN-24/40
XMC1400
SMPS control,
connectivity
VQFN-40/64
LQFP-64
XMC4200
Server power
150 ps HRPWM
LQFP-64/100
Digital power
XMC1300
Hall and encoder I/F,
MATH co-processor,
TSSOP-16/38
VQFN-24/40
XMC1400
Hall and encoder I/F,
MATH co-processor,
CAN
VQFN-40/64
LQFP-64
XMC4100/XMC4400
Industrial drives,
Hall and encoder I/F,
ΔΣ demodulator,
LQFP-64/100/144
LFBGA-144
XMC4700/4800
Industrial drives,
Hall and encoder I/F,
ΔΣ demodulator,
LQFP-100/144
LFBGA-196
Motor control
XMC1400
Multi CAN - 2 nodes
VQFN-48/64
LQFP-64
XMC4500
MultiCAN - 3 nodes,
Ethernet, +drives
ext. memory, SD/MMC
LQFP-100/144
LFBGA-144
XMC4800, XMC4300
EtherCAT, +drives
MultiCAN - 6 nodes
LQFP-100/144
LFGBGA-196
Industrial I/O
XMC1000
Arm® Cortex®-M0
CPU up to 48 MHz
Flash: 8–200 kB
Package: 16–64 pins
XMC4000
Arm® Cortex®-M4F
CPU up to 144 MHz
Flash: 64 kB–2 MB
Package: 48–196 pins
AURIX™ TC2x1)
TriCore™
Up to 3x multicore
CPU up to 300 MHz
Flash: 0.5–8 MB
Package: 80–516 pins
AURIX™ TC3x1)
TriCore™
Up to 6x multicore
CPU up to 300 MHz
Flash: 1–16 MB
Package: 100–516 pins
AURIX™ 2nd generation
AURIX™ 1st generation
XMC4000
XMC1000
Embedded Power ICs
Arm® Cortex®
MT
riCore™
1) AURIX™ devices add safety and CAN FD
XMC1000
Embedded power ICs
XMC4000 AURIX™
1st generation
AURIX™
2nd generation
Integration
Performance
Consumer and industrial
Embedded
Power ICs
(System-on-Chip)
Arm® Cortex®-M
CPU up to 40 MHz
Flash: 36–128 kB
Package: 48 pins
321
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XMC™ ecosystem, enablement and partners
Infineon enablement for XMC™ MCUs
› DAVE™ – www.infineon.com/dave
Professional and free-of-charge development platform
› XMC™ library for Embedded Coder® – www.infineon.com/matlab
Model-based design from MATLAB® and Simulink® environment,
download free of charge
› IEC60730 class B library for XMC™ – www.infineon.com/iec60730
Available for XMC™ industrial microcontrollers free of charge
› Microcontroller/Probe™ XMC™ – www.infineon.com/ucprobexmc
Free-of-charge version of microcontroller/Probe™ for XMC™ MCUs
to build user interfaces for visualizing, observing, and control of the
internals of XMC™ MCUs
› XMC™ link – www.infineon.com/xmclink
Functional isolated debug probe, based on SEGGER J-Link technology
In addition to a rich third party ecosystem and enablement
landscape, which support the entire development cycle from
evaluation to production.
For more www.infineon.com/xmc-ecosystem
From evaluation to production
Third parties
Hand-in-hand with third party tools
DAVE™ Apps
Graphical-
configurable
application-
oriented
soware
components
XMC™ Lib
Low-level
driver library/
APIs for
peripherals
Ide
aP
roduct
DAVE™
Professional free-of-charge IDE
XMC™ 32-bit industrial microcontroller portfolio
Examples
XMC™ Lib and
DAVE™ Apps
composed to
create more
complex
applications
A comprehensive set of tools, products, components, and services are available for fast and eicient design with
XMC™ microcontrollers.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
322
For more details on the product,
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XMC™ microcontrollers
Infineon’s XMC™ 32-bit industrial microcontroller portfolio is designed for system cost and eiciency for demanding
industrial applications. It comes with the most advanced peripheral set in the industry. Fast and largely autonomous
peripherals can be configured to support individual needs.
Highlights include analog mixed-signal, timer/PWM and communication peripherals powered by either an Arm®
Cortex®-M0 core (XMC1000 family) or an Arm® Cortex®-M4 core with a floating point unit (XMC4000 family).
Memory Analog Timer/PWM Connectivity Package
Arm®
Cortex®-M0
Frequency [MHz]
ADC1 2-bit/S&H
Number of channels
DAC1 2-bit
CCU4 (4 ch)
CCU8 (4 ch)
HRPWM (150 ps)
POSIF
∑ Demodulator
US IC
CAN 2.0B
USB
Ethernet
EtherCAT®
SDIO/SD/MMC
External BUS Unit (EBU)
XMC41x 80 Flash 64-128 kB 2/2 Up to 9 2 ch 2x 1x ✓ ✓ - 4x Up
to 2 ✓----VQFN 48
TQFP 64
RAM 20 kB
XMC42x 80 Flash 256 kB 2/2 Up to 9 2 ch 2x 1x ✓ ✓ - 4x 2x ✓ - - - - VQFN 48
TQFP 64
RAM 40 kB
XMC43x 144 Flash 256 kB 2/2 14 2 ch 2x 1x - - - 4x 2x ✓ ✓ ✓ ✓ - LQFP 100
RAM 128 kB
XMC44x 120 Flash 256-512 kB 4/4 Up to 18 2 ch 4x 2x ✓ 2x 4ch 4x 2x ✓ ✓ - - - TQFP 64
LQFP 100
RAM 80 kB
XMC45x
120 Flash 512 kB-1
MB 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 4x Up
to 3 ✓ ✓ - ✓ ✓ LQFP 100/144
LFBGA 144
RAM 128-160 kB
XMC47x 144 Flash 1.5-2 MB 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x ✓ ✓ - ✓ ✓ LQFP 100/144
LFBGA 196
RAM 276-352 kB
XMC48x 144 Flash 1-2 MB 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x ✓ ✓ ✓ ✓ ✓ LQFP 100/144
LFBGA 196
RAM 276-352 kB
Supply voltage range 3.1-3.6 V
Temperature range -40°C … 85°C/125°C
Clocks Memory Analog Timer/PWM Connectivity Package
Arm®
Cortex®-M0
Co-processor
Frequency
Peripherals
ADC1 2-bit/S&H
Number of channels
Analog comparators
CCU4 (4 ch)
CCU8 (4 ch)
POS IF
BCCU
US IC
CAN 2.0B
XMC11x - 32 64 Flash 8-64 kB 1/1 Up to
12 - 1x - - - 2x - VQFN 24/40
TSSOP 16/38
RAM 16 kB
XMC12x - 32 64 Flash 16-200 kB 1/2 Up to
12 Up to 3 1x - - ✓ 2x - VQFN 24/40
TSSOP 16/28/38
RAM 16 kB
XMC13x ✓ 32 64 Flash 8-200 kB 1/2 Up to
12 Up to 3 1x 1x ✓ ✓ 2x - VQFN 24/40
TSSOP 16/38
RAM 16 kB
XMC14x ✓ 48 96 Flash 32-200 kB 1/2 Up to
12 Up to 4 2x 2x ✓ ✓ 4x ✓ VQFN 40/48/64
LQFP 64
RAM 16 kB
Supply voltage range 1.8-5.5 V
Temperature range -40°C … 85°C/105°C
www.infineon.com/xmc
www.infineon.com/dave
323
For more details on the product,
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XMC™ digital power explorer kit
The new digital power explorer kit is designed with the particular goal of making it easy for engineers to take the first steps
into digital power control with XMC™ microcontrollers. It showcases both XMC™ families Arm® Cortex-M microcontrollers:
XMC4000 and XMC1000, 30V dual n-channel OptiMOS™ MOSFETs and IRS2011S gate drivers. The kit includes two dierent
control card options, XMC1300 control card (Arm® Cortex®-M0) and XMC4200 control card (Arm® Cortex®-M4F), which allow
designers to evaluate both XMC™ microcontroller families and make the right price/performance choice for their application.
Features and benefits
Key features
Synchronous buck converter evaluation kit controlled with XMC4200 or XMC1300
Arm® Cortex®-M MCUs
Onboard resistive load banks
Featuring BSC0924NDI dual n-channel OptiMOS™ MOSFET and IRS2011S
high- and low-side gate driver
Dierent control schemes possible
› Voltage mode control
› Peak current mode control (with slope compensation)
Key benefits
Easy entry in digital power control applications
Understand the details of voltage/peak current
control and how to extract the maximum of XMC™ devices
DAVE™ v4 APPs for buck converter and many
more example
www.infineon.com/xmc
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
324
For more details on the product,
click on the part number.
XMC™ power conversion kits
600 W half-bridge LLC evaluation board with 600 V CoolMOS™ C7 SJ MOSFET
with digital control
The 600 W LLC digital control evaluation board shows how to design the half-bridge LLC stage of a server SMPS with
the target to meet 80+ Titanium standard eiciency requirements. For this purpose, the latest CoolMOS™ technologies,
600V CoolMOS™ C7 or P6 superjunction MOSFETs have been used on the primary side, and OptiMOS™ low voltage
power MOSFET in SuperSO8, BSC010N04LS, in the synchronous rectification secondary stage in combination with
QR CoolSET™ ICE2QR2280Z, high- and low-side driver 2EDL05N06PF, low-side gate driver 2EDN7524F and a
XMC4200 microcontroller.
600 W LLC digital control Specification Infineon components
Vin
350-410VDC
MCU
XMC4200 (VQFN48)
Vout_nom
12 VDC
MOSFET SR
BSC010N04LS
Iout
50 A
HB driver
2EDL05N06PF
Pout
600 W
LLC HB MOSFET
CoolMOS™ IPP60R190P6
fres
157 kHz
Auxiliary PSU
ICE2QR2280Z
www.infineon.com/xmc www.infineon.com/800w-pfc-eval www.infineon.com/600w-llc-eval
High power density 800 W 130 kHz platinum server design with XMC1300
The 800 W PFC CCM evaluation board demonstrates design and practical results of an 800 W 130 kHz platinum server
PFC evaluation board based on Infineon devices, in terms of power semiconductors, non-isolated gate drivers, analog
and digital controllers for the PFC converter, as well as flyback controller for the auxiliary supply. This evaluation board
verifies the performance of the latest 600V CoolMOS™ C7 superjunction MOSFET technology working at 130 kHz in a
PFC CCM boost converter along with EiceDRIVER™ ICs and CoolSiC™ Schottky diode 650 V G5 using digital control.
800 W PFC CCM with XMC1300 Specification Infineon components
Vin
90-265 VAC
MCU
XMC1302 (TSSOP38)
Vout_nom
380VDC
MOSFET
600 V CoolMOS™ C7
Iout
2 A
MOSFET driver
EiceDRIVER™ 2EDN7524F non-isolated
PWM frequency
130 kHz
Diode
CoolSiC™ Schottky diode 650 V G5
THD
<10%
Auxiliary PSU
ICE2QR4780Z
Power factor
>0.9 from 20% load
Eiciency
97% (peak)
Features and benefits
Features and benefits
Key features
Classic PFC boost stage digitally controlled with XMC1302 including voltage
and current loops
Protections, including cycle-by-cycle current protection
Run time debug with isolated UART to PC interface and PC soware
Key features
600 W LLC half-bridge stage with synchronous rectification (SR)
All controlled with XMC4200 including:
› Start up (PWM to PFM) and burst-mode algorithms
› Adaptive dead time and capacitive-mode detection
› No hard commutation at any condition
Customer benefits
High eicient PFC stage with a complete systemsolution from Infineon
HW and SW available
Higher switching frequency permits higher power density
Customer benefits
Learn LLC topology with a complete system solution from Infineon
› HW and SW available
Close to customer solution
› High eiciency → 97.8%
› Reliability and power density
325
For more details on the product,
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XMC™ power conversion kits
3 kW dual-phase LLC converter using XMC4400
The 3 kW dual-phase LLC demonstration board is an example of a high eiciency isolated DC-DC converter using the
state-of-the-art Infineon components, both power devices and controller/driver ICs. The use of an advanced digital
control using the XMC4400 microcontroller, together with the latest generation of CoolMOS™ and OptiMOS™ devices,
allows achieving a very flat eiciency curve in the entire load range. The demonstration board is targeting the
high voltage DC-DC stage of high-end telecom rectifiers.
3 kW dual-phase LLC converter using XMC4400 Specification Infineon components
Vin
350-410VDC
MCU
XMC4400 (LQFP64)
Vout_nom
54.3 VDC
SR MOSFET
OptiMOS™
BSC093N15NS5
Iout_max
55 A
Drivers
1EDI60N12AF
2EDN7524R
Pout
3000 W
LLC
Half-bridge MOSFET
CoolMOS™ P6
IPW60R041P6
frange
90-200 kHz
Auxiliary PSU
ICE2QR2280Z
Peak eiciency
>98.4%
RGB LED lighting shield with XMC1202 for Arduino
The RGB LED lighting shield with XMC1202 for Arduino uses a DC-DC buck topology and is able to drive up to three
LED
channels with constant current. The shield itself is powered by a programmable XMC™ 32-bit Arm® MCU with
embedded brightness color control unit (BCCU, XMC1200 MCU series), for flicker-free LED dimming and color control.
Features
› Compatible with Arduino Uno R3 and XMC1100
boot kit from Infineon
› Easily configurable for various light engines and
any input voltage (within operating conditions)
› Wide DC input voltage range
› Simple I2C interface
Operating conditions
› Nominal: 12-48 V input voltage (max. 6-60V)
› Average LED current up to 700 mA (max. peak current 1 A)
The Infineon shields mentioned above are hardware
compatible with Arduino and Infineon’s XMC™ boot and
relax kits.
www.infineon.com/shields-for-arduino www.infineon.com/3kw-llc-eval-p7-to247
Features and benefits
Key features
Full digital control by XMC4400 on the secondary side
Digital current sharing with phase shedding
Accurate algorithm able to prevent hard commutation and capacitive load
mode in LLC operation
Customer benefits
Full digital control by XMC4400 on the secondary side
Eiciency peak 98.5% and more than 97.2% in the entire load range
Easy monitoring and parameter setting via a graphic user interface
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
326
For more details on the product,
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XMC™ power conversion kits
www.infineon.com/automationkit
3 kW dual-phase LLC converter
XMC4800 automation board V2 – explore XMC4800 microcontroller based on
Arm® Cortex®-M4
The XMC4800 automation board V2 uses Infineon’s industry leading XMC™ Arm® Cortex®-M4 microcontroller in
combination with Infineon's supply, interface, communication and safety products. The XMC4800 automation board V2
is designed to evaluate the capabilities of the XMC4800 microcontroller especially in EtherCAT® slave applications and
can be used with a wide range of development tools including Infineon’s free-of-charge Eclipse based IDE, DAVE™.
XMC4800 automation board V2 Type Description OPN
KIT_XMC48_AUT_BASE_V2 The XMC4800 automation board V2 utilizes Infineon’s industry leading
XMC Arm® Cortex®-M4 microcontroller in combination with Infineon's
supply, interface/communication and safety products.
KITXMC48AUTBASEV2TOBO1
XMC4800-E196K2048 Arm® Cortex®-M4 microcontroller XMC4800E196K2048AAXQMA1
ISO2H823V2.5 24 V 8-channel isolated output ISO2H823V25XUMA1
ISO1I813T 24 V 8-channel isolated input ISO1I813TXUMA1
SLS 32AIA020A4 USON10 OPTIGA™ Trust E – embedded security solution SLS32AIA020A4USON10XTMA2
TLE6250GV33 Infineon CAN transceiver TLE6250GV33XUMA1
IFX54441LDV Infineon voltage regulator IFX54441LDVXUMA1
Features and benefits
Key features
XMC4800-E196 MCU based on Arm® Cortex®-M4 at 144 MHz
EtherCAT® slave controller, 2 MB flash and 352 kB RAM
OPTIGA™ Trust E embedded security solution (CC EAL6+)
Real time clock crystal
SPI FRAM (64 kB non-volatile memory)
EtherCAT® slave node (2 EtherCAT® PHY and RJ45 Jacks)
24 V ISOFACE™ 8-channel inputs and 8-channel outputs CAN transceiver
CAN transceiver
Customer benefits
Complete automation kit gateway
Combined MCU with EtherCAT slave application
Isolated interfaces with diagnose
Ethernet connectivity with soware examples available
24 V supply
CAN connectivity
Full soware DAVE™ examples
327
For more details on the product,
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XMC™ power conversion kits
www.infineon.com/wirelesscharging
XMC™ wireless power controller – enabling wireless charging transmitter applications
Infineon's XMC™ wireless power controller, based on the Arm® Cortex®-M0 core, provides a powerful and cost-eective
platform for high performance, smart and safe wireless charging applications. The XMC™ wireless power controller
helps the next-generation wireless charging systems to meet strict safety, environmental and regulatory requirements,
while still enabling industry-leading charging performance and eiciency. This controller works seamlessly with
Infineon's power devices in a scalable architecture to provide a complete charging solution for everything from a
fast-charge smartphone, to a 20 W robot, or a 60 W drone and beyond.
For a detailed overview of Infineon's wireless charging solutions, check pages 25-29.
Features and benefits
Key features
Supports inductive and resonant charging methods
Power levels up to 60 W
Multiple industry standard and custom charging profiles using the same
hardware architecture
Single- and multi-coil transmitters
Half- and full-bridge support
Variable and fixed frequency transmitter types
Buck and boost topologies
Integrated flash for parameter storage
Voltage supply 1.8-5.5 V
Space saving VQFN-40 package
Customer benefits
Supports 15 W charging and existing standards, including fast charging of smartphones
Full power 15 W without exotic thermal management
Achieves charging rates equivalent to wired charging
Supports custom-charging profiles and industry standards on the same hardware
Foreign object detection (FOD) with improved accuracy quality-factor monitoring
Foreign object detection capability can be extended beyond existing standards to
improve detection
Supports custom coils, and greater than three coils
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
328
For more details on the product,
click on the part number.
XMC™ starter kits
XMC™ starter kits
Kits and evaluation boards
Xtreme2go
Order number: KIT_XMC_2GO_XTR_ XMC1400
› XMC1400 family kit with ADAFRUIT, MikroE and Shields2Go connectivity.
Extension for IoT and other cloud applications.
› The XMC1400 series devices are optimized for motor control, power conversion
and LED Lighting applications and Human-Machine Interface (HMI)
Click on the following to find/purchase the kit:
www.infineon.com/Xtreme2go
XMC1400 Arduino
Order number: KIT_XMC1400_ARDUINO
› This kit utilizes Infineon’s industry leading Arm® Cortex® M0 microcontroller in
combination with Arduino form factor.
› It can be used with a wide range of development tools including Infineon’s free
of charge Eclipse based IDE, DAVE™ and much more.
Click on the following to find/purchase the kit:
www.infineon.com/xmc1400_ARDUINO
Platform2go XMC4400
Order number: KIT_XMC_PLT_2GO_XMC4400
› Equipped with an Arm® Cortex®-M4 based XMC™ microcontroller, the XMC4400
Platform2Go is designed to evaluate the capabilities of Infineon’s XMC4400
microcontroller. It can be used with a wide range of development tools including
Infineon’s free of charge Eclipse based IDE DAVE™
› This kit has the XMC4400 device with debugger plus Ethernet, CAN, Arduino,
MikroBUS and Shields2Go form factor.
Click on the following to find/purchase the kit:
www.infineon.com/XMC4400patform2go
329
For more details on the product,
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XMC™ starter kits
Platform2go XMC4200
Order number: KIT_XMC_PLT 2GO_XMC 4200
› Equipped with an Arm® Cortex®-M4 based XMC™ microcontroller from Infineon
Technologies AG, the XMC4200 Platform2Go is designed to evaluate the
capabilities of Infineon’s XMC4200 microcontroller.
› It can be used with a wide range of development tools including Infineon’s free
of charge Eclipse based IDE DAVE™
› This kit has the XMC4200 device with debugger plus CAN, Arduino, MikroBUS
and Shields2Go form factor.
Click on the following to find/purchase the kit:
www.infineon.com/XMC4200patform2go
RGB LED lighting shield
Order number: KIT_XMC_LED_DALI_20_RGB
› One of the first intelligent evaluation boards compatible with
Arduino as well as Infineon’s XMC1100 BOOT KIT.
› Designed to be easily configurable and combinable for dierent
LED light engines and lamps, for fast prototyping and in-expensive
evaluation of LED lighting applications.
› The RGB LED lighting shield with XMC1302 uses a DC-DC
buck topology.
Click on the following to find/purchase the kit:
www.infineon.com/cms/en/product/evaluation-boards/kit_xmc_led_dali_20_rgb/
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
330
For more details on the product,
click on the part number.
XMC™ peripherals
www.infineon.com/xmc
Supporting the XMC1xxx and XMC4xxx families
In collaboration with the consultancy Hitex, Infineon developed the IEC60730 – class B soware library for XMC™
industrial microcontrollers for household electrical appliances. This is a dedicated soware library for XMC™ MCUs
with routines for internal supervisory functions and for self-diagnostics.
Extended documentation and pre-certified soware libraries to XMC™ Cortex® Arm® based controllers are free of charge.
For more information, please check: www.hitex.com/classb
Documentation Consultancy
› Safety application note
› Failure mode report
› FMEDA tool
by Infineon, revised in workshops by TÜV Süd
Implementation support by Hitex
Embedded security for XMC™ MCUs
Infineon and its partners provide solutions which support with data protection, allowing authentication and
encryption and securing firmware file updates to prevent cloning and downtimes.
Security solutions
Soware Hardware
Secure bootloader
by Infineon, XMC1000
OPTIGA™ family by Infineon
Hardware-based security solutions
CodeMeter Embedded
by WIBU, XMC4000 exclusive
OPTIGA™ Trust family
Turnkey and programmable security solutions
OPTIGA™ TPM family
Standardized certified turnkey solution
KMS/CycurKEYS
by ESCRYPT, XMC4000
emSecure
by SEGGER
XMC™ peripherals
IEC60730 class B library for XMC™
331
For more details on the product,
click on the part number.
AURIX™ microcontroller
AURIX™ – 32-bit microcontrollers
32-bit multicore TriCore™ – safety joins performance
AURIX™ is Infineon’s family of microcontrollers serving the needs of industrial applications in terms of performance and
safety. Its innovative multicore architecture, based on up to six independent 32-bit TriCore™ CPUs at 300 MHz, has been
designed to meet the highest safety standards while increasing the performance at the same time. Using the
AURIX™ scalable platform, developers will be able to implement applications such as motor control and drives, PLC or any
other automa tion application. Developments using AURIX™ require less eort to achieve the SIL/ IEC61508 standard based
on its innovative safety concept and multiple HW safety features. Furthermore, AURIX™ has enhanced communication
capabilities to support communication between CAN, LIN, FlexRay and Ethernet buses.
www.infineon.com/aurix
Features and benefits
Key features
TriCore™ with DSP functionality
Best-in-class real-time performance: up to six TriCore™ with up to 300 MHz per core
Supporting floating point and fix point with all cores
Up to 6.9 MB of internal RAM, up to 16 MB of flash
Innovative single supply 5 V or 3.3 V
IEC61508 conformance to support safety requirements up to SIL 3
Embedded EEPROM
Advanced communication peripherals: CAN FD, LIN, SPI, FlexRay, Ethernet
Customer benefits
High scalability gives the best cost-performance fit
High integration leads to significant cost savings
High integration leads to reduced complexity
Innovative supply concept leads to best-in-class power consumption
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
332
For more details on the product,
click on the part number.
AURIX™ microcontroller
www.infineon.com/aurix
AURIX™ TC2xx family system architecture
Powerful 1st generation AURIX™ TC2xx system architecture
AURIX™ TC2xx family package scalability
FPU PMU
PMI DMI
overlay Data flash
BROM
key flash
Progr.
flash
Progr.
flash
LMU
Ethernet
GTM
EVR
5 or 3.3 V
single supply
FlexRay
MultiCAN+
MSCx
ASCLINx
QSPIx
SENT
PSI5
I2C
FCE
IOMHSSL
PLL &
PLL ERAY
Ports
HSM
DS-ADCx
ADCx
CCU6x
GPT12x
STM
SCU
BCU
SDMABridge OCDS
RAM
SRI cross bar
System peripheral bus
System peripheral bus
TriCore™
1.6P
FPU
Diverse
lockstep core
Diverse
lockstep core
PMI DMI
overlay
TriCore™
1.6P
FPU
PMI
DMI
stand-by
overlay
TriCore™
1.6E
9x series
up to 8 MB
TQFP-80 LQFP-144
TQFP-144
TQFP-100 LQFP-176 LFBGA-292 BGA-416 LFBGA-516
TC297
300 MHz
TC298
300 MHz
TC299
300 MHz
7x series
up to 4 MB
TC275
200 MHz
TC277
200 MHz
TC267
200 MHz
TC237
200 MHz
6x series
up to 2.5 MB
TC264
200 MHz
TC265
200 MHz
3x series
up to 2 MB
TC233
200 MHz
TC234
200 MHz
2x series
up to 1 MB
TC223
133 MHz
TC224
133 MHz
TC214
133 MHz
1x series
up to 512 KB
Flash
Package
TC213
133 MHz
TC222
133 MHz
TC212
133 MHz
Upgrade/downgrade with pin-compatible packages
333
For more details on the product,
click on the part number.
www.infineon.com/aurix
AURIX™ microcontroller
AURIX™ TC2xx portfolio
Product type
Max. clock frequency [MHz]
Program memory [kB]
SRAM (incl. cache) [kB]
Co-processor 1)
Cores/lockstep
Timed I/O
Number of ADC channels
External bus interface
CAN nodes
Communication interfaces 2)
Temperature ranges 3)
Packages
Additional features/remarks 4)
TC299TX 300 8000 2728 FPU 3/1 263 84/10 DS yes 6
4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K LFBGA-516 EVR, STBU, HSM
TC299TP 300 8000 728 FPU 3/1 263 84/10 DS yes 6
4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K LFBGA-516 EVR, STBU, HSM
TC298TP 300 8000 728 FPU 3/1 232 60/10 DS yes 6
4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K LBGA-416 EVR, STBU, HSM
TC297TA 300 8000 2728 FPU, FFT, CIF 3/1 169 60/10 DS no 6
4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K LFBGA-292 EVR, STBU, HSM
TC297TX 300 8000 2728 FPU 3/1 263 60/10 DS no 6
4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K LFBGA-292 EVR, STBU, HSM
TC297TP 300 8000 728 FPU 3/1 169 60/10 DS no 6
4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K LFBGA-292 EVR, STBU, HSM
TC277TP 200 4000 472 FPU 3/2 169 60/6 DS no 4 4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD K LFBGA-292 EVR, WUT, HSM
TC275TP 200 4000 472 FPU 3/2 112 60/6 DS no 4 4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-176 EVR, WUT, HSM
TC267D 200 2500 240 FPU 2/1 169 50/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, 3xPSI5, HSSL, FlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU
TC265D 200 2500 240 FPU 2/1 112 50/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-176 EVR, STBU
TC264DA 200 2500 752 FPU, FFT, CIF 2/1 88 40/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-144 EVR, STBU
TC264D 200 2500 240 FPU 2/1 88 40/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-144 EVR, STBU
TC237LP 200 2000 192 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K LFBGA-292 EVR, WUT, HSM
TC234LA 200 2000 704 FPU, FFT 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet K TQFP-144 EVR, WUT, HSM
TC234LX 200 2000 704 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet K TQFP-144 EVR, WUT, HSM
TC234LP 200 2000 192 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K TQFP-144 EVR, WUT, HSM
TC233LP 200 2000 192 FPU 1/1 78 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K TQFP-100 EVR, WUT, HSM
TC224L 133 1000 96 FPU 1/1 120 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-144 EVR, WUT
TC223L 133 1000 96 FPU 1/1 78 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-100 EVR, WUT
TC222L 133 1000 96 FPU 1/1 59 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-80 EVR, WUT
TC214L 133 500 96 FPU 1/1 120 14 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-144 EVR, WUT
TC213L 133 500 96 FPU 1/1 78 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-100 EVR, WUT
TC212L 133 500 96 FPU 1/1 59 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-80 EVR, WUT
1) CIF = camera and external ADC Interface, FFT = fast fourier transform accelerator, FPU = floating point unit, PCP = peripheral control processor
2) ASC = asynchronous serial channel, ASCLIN = asyn/synchronous local interconnect network, HSSL= high-speed serial link, I2C = inter-integrated circuit,
LIN = local interconnect network, MLI = micro link interface, MSC = micro second channel, PSI5 = peripheral sensor interface 5, QSPI = queued serial peripheral interface, SENT =
single edge nibble transmission, SSC = synchronous serial channel, CAN FD ISO11898-1:2015
3) Ambient temperature range: A = -40°C ... 140°C, B = 0°C ... 70°C, F = -40°C ... 85°C, H = -40°C ... 110°C, K = -40°C ... 125°C, L = -40°C ... 150°C, X = -40°C ... 105°C
4) EVR = embedded voltage regulator, HSM = hardware security module, STBU = stand-by control unit, WUT = wake-up timer
Evolution from TC2xx to TC3xx - Easy migration with focus on reuse
› Fast conversion of existing AURIX™ TC2xx designs
– Backwards compatibility
– High AURIX™ TC3xx compatibility to pinout of existing QFP100/144/176 and BGA packages
› Flexibility - scalability within the AURIX™ TC3xx family
– Up-/Downgrade paths for devices in identical packages
– Compatible pin-out of QFP/BGA package options enabling combination designs
› Pin-to-pin compatibility between the devices of AURIX™ TC2xx/TC3xx and from generation to generation
› A high scalability with a very large portfolio for both AURIX™ TC2xx and TC3xx
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
334
For more details on the product,
click on the part number.
AURIX™ TC3xx family system architecture
AURIX™ TC3xx – scalable family - from low-cost to high-performance applications
AURIX™ TC3xx provides an upgrade on key parameters with focus on SW & HW reuse
www.infineon.com/aurix
AURIX™ microcontroller
EVADC
FCOMP
Secondary ADC
Primary ADC
EDS ADC
GTM
CCU6
GPT
STM
ERAY
CAN FD
ASC LIN
QSPI/I
2
S (emulation)
I
2
C
PSI5
PSI5S
SENT
LMUDAM Large
MEM
Mini
MCDS
SPU
RIF
CIF SPU
RIF
Dflash Pflash
0 … 5
ETH
MAC DMA SFI
bridge
HSSL
HSCT
eMMC/SDIO
StdBy ctrl
HSM
FCE
MSC
HSDPM
SCU
IOM
Port
System resource interconnect
System
peripheral
bus
Memories
› Larger SRAM
› SRAM/flash ratio increased
› Enhanced MPU
› A/B swap support
Stand-by control unit
› Low-power modes
ADAS
› LVDS IF
› Signal processing unit
ADC
› Improvement of existing ADC
› Reduction of capacitive load
Delta-sigma
› Enhanced concept
Performance
› New TriCore™ 162 generation
› New instructions
› Up to 6 CPUs at 300 MHz
› New direct flash access path
IO pads
all 5 V/3.3 V
Ethernet
› 1 Gbit/s ETH
› QoS services
› Remote DMA
HSM: Full EVITA compliance
› New accelerators ECC256/SHA25
6
› Available on all devices
Safety
› LBIST
› MBIST upgrade
eMMC/SDIO
› External NAND flash IF
Checker core
Checker core
Checker core
CPU5
CPU4
CPU3
CPU2
CPU1
Checker core
TC 1.6P
CPU0
FPU
PSPR, PCACHE
DSPR, DCACHE
Increased from 3 to 6 cores
Developed in 40 nm for power consumption reduction
Fully compatible devices with focus on HW & SW reuse
IEC61508 compliant enabling SiL-3 level
Upgraded to Full EVITA support
Richer peripheral set
Full support of SOTA A/B swap
Performance increase and reduction of power
Scalable & backwards compatible to TC2xx
Functional safety
Enhanced security
Improved networking
SOTA
335
For more details on the product,
click on the part number.
www.infineon.com/aurix
AURIX™ microcontroller
› Advanced package technologies deliver the best price/performance ratio
› Customers can choose between dierent devices in the same pin-compatible package
AURIX™ TC3xx package scalability
L – Single locks
tep core
1) An option of 300 MHz is also available
D – Dual core T – Triple core Q – Quadruple core X – Sextuple core Control and actuate Sense and compute
TQFP-100TQFP-80
Package
Flash BGA-180 BGA-233T/LQFP-144 LQFP-176 LFBGA-292 LFBGA-516
TC397x
300 MHz
TC397XA
300 MHz
TC387Qx
300 MHz
TC387Q
300 MHz
TC399x
300 MHz
TC389Q
300 MHz
TC377TX
300 MHz
TC377T
300 MHz
TC367D
300 MHz
TC375T
300 MHz
TC357TA
300 MHz
TC356TA
300 MHz
TC337DA1)
200 MHz
TC337L1)
200 MHz
TC366D
300 MHz
TC336DA1)
200 MHz
TC336L1)
200 MHz
TC327L
160 MHz
TC364D
300 MHz
TC334L1)
200 MHz
TC324L
160 MHz
TC333L1)
200 MHz
TC332L1)
200 MHz
TC323L
160 MHz
TC322L
160 MHz
8x series
10 MB
7x X series
6 MB
7x series
6 MB
6x series
4 MB
5x A series
4 MB
Ax series
4 MB
3x A series
2 MB
3x series
2 MB
2x series
1 MB
9x series
16 MB
9x A series
16 MB
6x 300 MHz
6x 300 MHz
4x 300 MHz
4x 300 MHz
3x 300 MHz
3x 300 MHz
2x 300 MHz
4x 300 MHz
3x 300 MHz
2x 300 MHz
1x 300 MHz
1x 300 MHz
Ex series
12 MB
TC365D
300 MHz
TC3A8Q
300 MHz
TC3A7Q
300 MHz
MCU scalability Safety/security concept
AURIX™ TC3xx
› Performance and flash
› Pin compatibility
› Binary-compatible cores
Power consumption
› On-chip SC DC-DC high-eiciency power supply
› Integrated standby controller
› ISO 26262 compliance
› IEC61508 compliant
Connectivity
› Ethernet: up to 2x1 GB
› CAN FD: up to 12 channels
› eMMC IF
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
336
For more details on the product,
click on the part number.
AURIX™ microcontroller
www.infineon.com/aurix
AURIX™ TC3xx portfolio
Product type
Cores/lockstep
Max clock
frequency
[MHz]
Program
memory
[kB]
SRAM (incl.
cache) [kB]
Radar
accelerator/
radar interface 1)
CAN/CAN FD
nodes
Ethernet
100/1000Mbit
External bus
interface 2)
Communication
interfaces
HSM
Temperature
ranges
Packages
Additional
features/
remarks 3)
AURIX™ TC3xx family
TC399XX 6/4 300 16000 6912 no 12 1 EBU, eMMC,
2x HSSL
6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC399XP 6/4 300 16000 2816 no 12 1 EBU, eMMC,
2x HSSL
6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC397XX 6/4 300 16000 6912 no 12 1 eMMC, 2x
HSSL
6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC397XP 6/4 300 16000 2816 no 12 1 eMMC, 2x
HSSL
6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC397XA 6/4 300 16000 6912 2x SPU/
8x 400 Mbit/s LVDS
12 1 2x HSSL 6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC389QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN,
25x SENT, 4x PSI5, 2x I2C, 3x MSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC387QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN,
25x SENT, 4x PSI5, 2x I2C, 3x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC377TX 3/3 300 6000 4208 no 12 2 eMMC, HSSL 5x SPI, 1x FlexRay, 12x LIN,
15x SENT, 2x PSI5, 1x I2C, 2x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC377TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN,
15x SENT, 2x PSI5, 1x I2C, 2x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC375TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN,
15x SENT, 2x PSI5, 1x I2C, 2x MSC
EVITA
full
K, L LQFP-176 5 V/3.3 V EVR,
8-bit SCR
TC367DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC366DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC
EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC365DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC
EVITA
full
K, L LQFP-176 5 V/3.3 V EVR,
8-bit SCR
TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x SENT,
2x PSI5, 1x I2C, 1x MSC
EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC
EVITA
full
K, L LQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC357TA 3/2 300 4000 3664 2x SPU/
8x 400 Mbit/s LVDS
8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC356TA 3/2 300 4000 3664 2x SPU/
8x 400 Mbit/s LVDS
8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC337DA 2/1 200 2000 1568 1x SPU/
4x 400 Mbit/s LVDS
8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC336DA 2/1 200 2000 1568 1x SPU/
4x 400 Mbit/s LVDS
8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC337LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC336LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC334LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC333LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA
full
K, L TQFP-100 5 V/3.3 V EVR,
8-bit SCR
TC332LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA
full
K, L TQFP-80 5 V/3.3 V EVR,
8-bit SCR
TC327LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC324LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC323LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-100 5 V/3.3 V EVR,
8-bit SCR
TC322LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-80 5 V/3.3 V EVR,
8-bit SCR
1) SPU – Signal processing unit
2) HSSL – High-speed serial link
3) 8-bit SCR – Standby controller for low power modes
4) EVR – Embedded voltage regulator
337
For more details on the product,
click on the part number.
AURIX™ microcontroller
www.infineon.com/aurix-kits
AURIX™ starter and application kits
Infineon starter kits – 32-bit microcontrollers
AURIX™ Triboards Kits
› Full evaluation board for development to write
and debug your 1st programs
› Includes getting started advice, free TriCore™
entry tool chain, technical documentation,
compiler and debugger
› TriBoard available for all productive silicon
AURIX™ TFT Kits
› Low cost board for early evaluation with limited
access to signals
› Additional touchscreen display for convenient handling
› TFT board available for every silicon
Click on the following to find/purchase the kit:
www.infineon.com/aurix-kits
Arduino ShieldBuddy Kits
Order number: KIT_AURIX_TC275_ARD_SB
› The Hitex TC275/TC375 ShieldBuddy follows the Arduino standard
› Compatible with 100’s of Arduino application shields
› Evaluation licenses available
› Ideal for getting started on a high-end real time embedded industrial
or automotive application as well as students and hobbyists
AURIX™ TC275 Lite kit
› AURIX™ TC275/TC375 device in LQFP-176 package
› FTDI based debugger with micro USB
› Use of Arduino Uno/compatible platform
› Coming soon
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
338
For more details on the product,
click on the part number.
Infineon application kits – 32-bit microcontrollers
www.infineon.com/aurix
AURIX™ microcontroller
New hybrid kit for inverter applications
› IFX system oering: such as power modules, gate drivers,
current and position sensors to develop inverter systems
› Soware to start development of inverter for 3-phase motors
› AURIX™ 2G hardware optimized logic board for testing dierent
hybrid kits for inverter applications
Motor control board TC3xx
› Based on TC397
› Soware FOC (Field Oriented Control) algorithm: encoder as position sensor (GPT12)
› 3-phase current sensing (EVADC), PWM generation (GTM),
communication with drive board (QSPI) commands via TFT display (QSPI)
Motor control
Order number: KIT_AURIX_TC234_MOTORCTR
› TC234 application kit with TFT display incl. safety supply TLF35584
› Driving of a 3-phase PMSM/BLCD (12 V/max. 50 W)
› BLDC motor from Nanotec integrated
› Soware available with flexible configuration
24 GHz radar
Order number: KIT_ATV_24GHZ_RADAR
› Range-Doppler radar system with two Rx antennas and one
Tx antenna based on AURIX™ TC264DA and BGT24ATR12
› Allows implementation and testing of 24 GHz radar applications as Doppler
movement detectors, FSK or FMCW range/position measurement
Wireless charging
Order number: KIT_AURIX_TC21_SC
› Supports all fast charge smartphones
› Unique power drive architecture minimizes EMI
› Improved accuracy Foreign Object Detection (FOD)
339
For more details on the product,
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Industrial robotics
Application example
Application features
› High computing performances
› High level of accuracy, integration and eiciency
› Safety management in line with current norms
› Various topologies for axes, joints and motors
› Security features that protect intellectual property
from counterfeiting
Suggested products
› TC23x
› TC33x
› TC36x
› TC37x
› TC38x
› TC39x
› XMC4xxx
System benefits
› High computing performance: up to 6x 300 MHz
› High flexibility thanks to tailored peripherals
› Integrated safety support
(EN ISO 10218 and ISO/TS15066)
› Integrated security with hardware security module
› Robust 3 V-, 5 V-, LVDS – PortPins
› Large portfolio with long-term availability
www.infineon.com/aurix
Current sensing
Position sensing
Actuators
Gate driver
Hall latches
Sensor interface
XMC4xxx
3-phase
inverter
M
Power management
SMPS
LDO
DC-DC
Angle sensor
LEDs
Authentication
Security
Wireless
CAN
USB
Communications
Sensing
Human-device
interface
EtherCAT
Gyro
Pushbutton
Accelerometer
Output signal
Pressure sensor
Light/optical sensor
3D image sensor
Radar sensor
32-bit MCU
AURIX™
AURIX™ microcontroller
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
340
For more details on the product,
click on the part number.
AURIX™ microcontroller
www.infineon.com/aurix
Preferred Design Houses (PDH) and soware resellers
The preferred design house extends the support force by specifying and customizing the know-how. Furthermore,
it brings an additional value for customer service. The preferred design house supports the set up for systems using
AURIX™ and XMC™ , including soware and other Infineon products. Our partners are trained to use AURIX™ and XMC™.
› 1st level customer support covering
Infineon products/solutions
› Technical interface and support
to the customer
› Driving design at customer
› Basic training for design teams
at customer
› 24 h response time to the customer
› Project management and project-specific
application support
› Specification of general soware architec-
ture, defining required layers, control and
data flow structure etc.
› Specification and implementation of
custom device drivers
› Optimization of soware components
with regard to speed/code size
Classic
(Free of charge)
Premium
(Consultancy mode)
To be agreed between
customers and PDH
› Soware testing
› Support for project-specific
functional safety engineering
› Project-specific support for
security solution
› Safety support
› Security support
› Multicore support
AURIX™ and XMC™ PDH partners
Basic
•
•
Essential principles and elementar
y know-how to support
a customer; provision of basic tr
aining for design teams
Advanced
•
•
High-level project-specific
application support/consulting
Expert
•
•
Extensive knowledg
e and ability
to fully support development
341
For more details on the product,
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www.infineon.com/embeddedpower
Criteria TLE984x TLE9845 TLE9850/1 TLE985x TLE986x TLE987x
Controller
Arm® Cortex®-M0 Arm® Cortex®-M3
Core frequency
25-40MHz 40 MHz 24-40MHz
Flash size
36KB – 64KB 48KB 48/64KB 48KB – 96KB 36KB – 128KB
(Extension to 256KB in development)
Driver stage
Relay Half-bridge H-bridge B6-bridge
Relay PN FET half-bridge * NN FET falf-Bridge N FET H-bridge N FET B6-bridge
HV monitor inputs
4-5 5 4 0-1
Junction
temperature levels
150°C 150°C 150°C and 175°C 150°C and 175°C 150°C and 175°C
Packages
VQFN-48-31 VQFN-48-31
VQFN-48-29
VQFN-48-31
VQFN-48-29
VQFN-48-29 and VQFN-48-31
(TQFP-48 planned)
Features and benefits
Key features
Extensive diagnostics and protections embedded within the system-on-chip
Minimum number of external components needed
Platform based approach with compatible soware between the product families
Data processing, actuation and sensing integrated into the product with 32-bit
Arm® Cortex®-M
Leadless VQFN package with 7x7 mm footprint
Intelligent power saving modes including stop and sleep mode and energy
management for external sensors (on demand)
Customer benefits
High levels of system reliability
Reduced cost
Support multiple and flexible designs with minimal eort
Space saving
Energy saving
Embedded power ICs
System-on-chip solution for motor control applications
Infineon‘s Embedded power ICs include a 32-bit Arm® Cortex®-M microcontroller, a voltage regulator, the communication
interfaces, along with the driving stages for motor control applications. These system-on-chip solutions oer an
unmatched level of integration of all functions required to sense, control and actuate a motor. They save space and
energy, improve the overall system reliability through advanced diagnosis features and reduce the overall cost due to a
minimum number of external components. They perfectly fit with a range of motor control applications where a small
package form factor and a minimum number of external components are essential.
› Embedded power ICs enable mechatronic motor
control solutions for either relay, half-bridge or
fullbridge DC and BLDC motor applications
› They are supported by a complete development
tool chain provided by Infineon and third party
vendors. The tool chain includes compilers,
debuggers, evaluation boards, LIN low level drivers
and configuration tools as well as variety of example
soware code.
Embedded power ICs
Power
supply
Interface
Supporting Functionality
Position measurement
Switch panel inputs
Output driver
Discrete control
or
Microcontroller
Bridge driver
or
Relay driver
MOSFET
of
Relay M
M
M
PWM
LIN
Input
signals
Uni-direction
(DC brush motor)
+12 V from
battery
Embedded power IC
2-phase
(DC brush motor)
3-phase
(Brushless DC mot
or)
-BLDC-
or
or
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
342
For more details on the product,
click on the part number.
Features and benefits
Key features
Implemented motor control algorithms (FOC, BEMF, Hall)
Controlled over Arduino via SPI
Compatible with the Arduino Uno or the Infineon XMC™ baseboard
Up to four Shields can be used simultaneously
Each Shield can be controlled independently
Motor parameters can be set for each Shield individually
Customer benefits
Easy to use API, allowing the user to quickly setup an application
High performance BLDC motor control in form of the TLE987x chip
www.infineon.com/bldcmotorshield
www.infineon.com/shields-for-arduino
Embedded power ICs
3-phase motor control shield with TLE9879QXA40
The BLDC Shield for Arduino uses the TLE9879QXA40 chip, which is a part of the TLE987x family of the Infineon
Embedded power IC portfolio. It enables the shield to drive 3-phase BLDC motors with a variety of dierent features.
One Arduino base board can control up to four BLDC shields via SPI. The BLDC Shield firmware provides an
autoaddressing functionality. Every shield in the stack can be controlled independently and run completely dierent
motor control algorithms if desired.
The shield implements three dierent advanced
motor control algorithms:
› Sensorless field-oriented control (FOC),
› Block commutation with back EMF (BEMF)
› Hall based block commutation (HALL)
The firmware can be changed using the SWD Interface
Additional connectors for voltage supply, motor-phases
and hall sensors speed up the evaluation.
Our BLDC Shield for Arduino comes with a library
which includes a collection of code that makes it easy
for you to run your project. The Arduino library oers
an intuitive API to quickly setup and configure an
application.
BLDC Motor Control Shield for Arduino
343
For more details on the product,
click on the part number.
Microcontroller support
Further information, datasheets and documents
www.infineon.com/xmc
www.infineon.com/xmc1000
www.infineon.com/xmc4000
www.infineon.com/aurix
www.infineon.com/makers
XMC SC Wireless power controller:
www.infineon.com/xmcscwirelesspowercontrollers
Infineon support for
industrial microcontrollers
One platform, countless solutions
XMC™ MCUs ecosystem and enablement –
kits, board, tools and soware
Boards and kits:
www.infineon.com/xmc-dev
www.infineon.com/connectivitykit
www.infineon.com/ethercat
Ecosystem and tools:
www.infineon.com/xmc-ecosystem
DAVE™ IDE:
www.infineon.com/dave
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
344
XENSIV™ sensors
For more details on the product,
click on the part number.
› XENSIV™ pressure sensors
› XENSIV™ current sensors
› XENSIV™ magnetic position sensors
› Intuitive sensing
› XENSIV™ MEMS microphone
› XENSIV™ pressure sensor
› XENSIV™ 24 GHz radar sensor ICs
› XENSIV™ 60 GHz radar sensor IC
› Shield2Go
› Sensor 2GO kits
Sensors
345
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
346
For more details on the product,
click on the part number.
XENSIV™
347
For more details on the product,
click on the part number.
XENSIV™
Infineon XENSIV™ –
sensing the world
Infineon XENSIV™ sensors are exceptionally precise thanks to industry-leading
technologies. They are the perfect fit for various customer applications in
automotive, industrial and consumer markets.
From the world leader in sensing technology, XENSIV™ sensors simplify lives
by enabling “things” to “see”, “hear”, “feel” and intuitively “understand”
their environment. As a result of proven quality and outstanding reliability,
customers can rely on XENSIV™ for system stability, durability and integrity.
Providing high accuracy and best-in-class measurement performance,
XENSIV™ sensors add great value to customer applications. More than
40 years of experience in sensing solutions and a deep-rooted system
understanding result in the broadest portfolio of ready-to-use sensor
solutions on the market. Ecosystem partners and our customers partner with
us for leading technologies, perfect-fit solutions and continuous innovation.
With a proven track record in IoT innovation, we continue to seamlessly
and securely connect people and machines. Many IoT trends, such as smart
devices and wearables, electromobility and connected cars, smart factories
and homes, and energy intelligence are being driven by technologies that
develop with XENSIV™ sensors families as one of their key elements.
Today, we are already inspiring the next generation of smart environments,
capable of understanding and responding to human communication.
Infineon's semiconductors are at the very heart of machine-to-machine (M2M),
human-machine interface (HMI), mobile and wireless infrastructure technologies.
As the technological boundary between humans and machines gradually
disappears, these devices need even more advanced intelligence, enriched with
voice assistance capabilities and the latest sensor fusion innovations, not to
mention robust security technologies to protect personal data.
Infineon’s sensors and microphones are already delivering this intelligent
functionality and inspiring the next step in mobile connectivity.
www.infineon.com/xensiv
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
348
For more details on the product,
click on the part number.
XENSIV™ pressure sensors
Absolute pressure sensors (MAP and BAP)
KP21x/KP22x –
Analog manifold air pressure sensor IC family (MAP + turbo MAP)
KP23x –
Analog barometric air pressure (BAP) sensor IC family
KP25x/KP264 –
Digital barometric air pressure (BAP) sensor IC family
Infineon's pressure sensors are ideal for a wide range of applications in automotive and industrial sectors.
Typical applications in automotive include side airbag, engine control and seat comfort with high quality, highly
accurate products adhering to ISO26262 standard. Infineon oers the ideal portfolio for these systems.
The analog and digital interfaces of Infineon's pressure sensors provide customers with a high degree of design
flexibility and enable manufacturers to meet evolving market
demands.
Features
› Manifold air pressure measurement –
MAP and turbo MAP
› Excellent accuracy of up to 1.0 kPa over a large
temperature range
› Ratiometric analog voltage output proportional
to the applied pressure
› Output signal fully compensated over pressure and
temperature
› Pressure range from 10 to 400 kPa
› Temperature range from -40 to +140°C
› Output clamping (optional)
› Complete product family available with multiple
transfer function
› Reverse polarity protection
› Green SMD package
Features
› Absolute air pressure measurement
› Excellent accuracy of 1.0 kPa over a large temperature
range
› Ratiometric analog voltage output proportional
to the applied pressure
› Output signal fully compensated across pressure and
temperature range
› Pressure range from 40 to 165 kPa
› Temperature range from -40 to +125°C
› Serial service interface
› Open bond detection (OBD) for supply and GND
› Inverse polarity protection
› Green SMD package
Features
› Absolute air pressure measurement
› Excellent accuracy of 1.0 kPa over a large temperature range
› Real 10-bit pressure resolution
› Integrated temperature sensor
› Real 10-bit temperature resolution
› Power-down mode for reduced power consumption
› Self diagnosis features
› Output signal fully compensated across pressure and
temperature range
› Pressure range from 40 to 165 kPa
› Temperature range from -40 to +125°C
› Green SMD package
www.infineon.com/pressure
349
For more details on the product,
click on the part number.
XENSIV™ pressure sensors
KP276
Media robust MAP sensor with digital interface
Features
› Media robustness for current automotive requirements
› Digital single edge nibble transmission (SENT) interface (282 clock ticks)
› Excellent accuracy of ±0.77 percent FSS
› Green SMD package
› Temperature range -40 to +170°C
› Integrated NTC temperature sensor functionality with fast start up time (typ. 10ms)
Block diagram
Integrated pressure sensor ICs for manifold and barometric air pressure
Pressure
cells
Voltage
regulator
Analog
Normal mode/
Digital
diagnosis mode
E2PROM
interface E2PROM
Temperature
compensation ROM
Reset
VDDA
MUX
Digital
signal
processing
(interface driver)
Buer amplifier
NTC conditioning
ADC
Digital
core
(iSM)
SPI
interface
V
DD
NCS
NTC
IN
CLK
SDI
SDO
GND
SENTOU
T
VDDD
Product Pressure range [kPa] Max. accuracy [kPa] Max. operating temperature [°C] Automotive Industrial
KP21x * 10 ... 150 1.0 140 ✓ ✓
KP22x * 10 ... 400 2.5 140 ✓ ✓
KP23x * 15 ... 115 1.0 125 ✓ ✓
KP236N6165 60 ... 165 1.0 125 ✓ ✓
KP253 60 ... 165 1.0 125 ✓ ✓
KP254 40 ... 115 1.5 125 ✓ ✓
KP255 * 10 ... 125 1.4 140 ✓ ✓
KP256 60 ... 165 1.0 125 ✓ ✓
KP264 40...115 1.5 125 ✓ ✓
KP276 * 10 ... 400 3.0 170 ✓ ✓
www.infineon.com/pressure
*For more information on the product, contact our product support
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
350
For more details on the product,
click on the part number.
XENSIV™ current sensors
High-precision coreless current sensors
for industrial applications
Infineon's current sensors provide accurate and stable current measurement up to 120 A. The products are intended
for use in high-voltage industrial applications such as electric drives, photovoltaic inverters, power supplies or battery
management systems. The coreless open-loop sensors are based on Infineon’s precise and stable Hall technology.
Thus, the output signal is highly linear over temperature and lifetime. Due to a lack of an iron core, the sensor signal
doesn’t show hysteresis and it doesn’t suer from saturation. Thanks to the integrated current rail there is no need
for external calibration. The dierential measurement with two Hall cells ensures high accuracy even in a noisy
environment with cross-talk from adjacent current lines or magnetic stray fields. Highlights of the XENSIV™ TLI4971
include best-in-class thermal performance for high currents as a result of its innovative TISON-8 package as well as
isolation against high voltages. The two output pins for fast overcurrent signals can be used for pre-warning and system
shut-down. Designers can program the threshold levels of the overcurrent signals and thus adapt them to individual
requirements without any external components. The sensor also provides a signal in case of an over or undervoltage
condition for the supply voltage. The well-established Infineon's TLI4970 combines superior accuracy with one output
pin for overcurrent detection signal. The measurement signal is provided through a 3-pin serial peripheral interface (SPI)
using a standard unidirectional 16-bit SPI protocol is used. Several sensors can be connected to a parallel SPI bus.
www.infineon.com/current-sensor
Product Accuracy 1) Current range [A] Bandwidth [kHz]
Sensitivity [mV/A]
Certification Industrial Package
TLI4971-A120T5-U-E0001 3.45% 120.0 120 kHz min. 10 UL ✓ PG-TISON-8
TLI4971-A120T5-E0001 3.45% 120.0 120 kHz min. 10 – ✓ PG-TISON-8
1)
Total error over lifetime and temperature
Features
› Integrated current rail with typical 225 µΩ insertion resistance enables ultralow power loss
› Smallest form factor, 8x8 mm SMD, for easy integration and board area saving
› Single supply voltage, 3.1 to 3.5 V
› Highly accurate, scalable, DC and AC current sensing
› Bandwidth greater than 120 kHz enables wide range of applications
› Very low sensitivity error over temperature (max. 2.5%)
› Excellent stability of oset over temperature and lifetime
› High robustness to voltage slew rates up to 10 V/ns
› Galvanic functional isolation up to 1150 V peak VIORM;
partial discharge capability of at least 1200 V; 4 mm clearance and creepage
› Dierential sensor principle ensures superior magnetic stray field suppression
› Two independent fast over-current detection (OCD) pins with configurable
thresholds enable protection mechanisms for power circuitry (typical < 1.5 µs)
› Precalibrated sensor
Applications
› Electrical drives (up to 690 V)
› Photovoltaic inverter
› General purpose inverters
› Overload and overcurrent detection
› Current monitoring
› Chargers Power supplies
351
For more details on the product,
click on the part number.
Product Type Operating point BOP Release point BRP Hysteresis BHY Automotive Industrial Consumer Package
TLE4961-1M/L Latch 2.0 -2.0 4.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4961-2M Latch 5.0 -5.0 10.0 ✓ ✓ ✓ SOT23
TLE4961-3M/L Latch 7.5 -7.5 15.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4964-1M Switch 18.0 12.5 5.5 ✓ ✓ ✓ SOT23
TLE4964-2M Switch 28.0 22.5 5.5 ✓ ✓ ✓ SOT23
TLE4964-3M Switch 12.5 9.5 3.0 ✓ ✓ ✓ SOT23
TLE4964-5M Switch 7.5 5.0 2.5 ✓ ✓ ✓ SOT23
TLE4968-1M/L Bipolar 1.0 -1.0 2.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4961-5M Latch 15.0 -15.0 30.0 ✓ ✓ ✓ SOT23
TLE4961-4M Latch 10.0 -10.0 20.0 ✓ ✓ ✓ SOT23
TLE4964-4M Switch 10.0 8.5 1.5 ✓ ✓ ✓ SOT23
TLE4964-6M Switch 3.5 2.5 1.0 ✓ ✓ ✓ SOT23
TLV4964-1M Switch 18.0 12.5 5.5 – – ✓ SOT23
TLV4964-2M Switch 28.0 22.5 5.5 – – ✓ SOT23
TLI4961-1M/L Latch 2.0 -2.0 4.0 – ✓ ✓ SOT23/SSO-3-2
TLV4961-3M Latch 7.5 -7.0 15.0 – – ✓ SOT23
XENSIV™ magnetic position sensors
Hall switches
The energy-saving option with excellent accuracy and robustness
TLE/TLI/TLV4961/64/6: Energy-eicient Hall switch family for up to 32 V
The TLE/TLI/TLV496x-xM/L family of Hall switches saves energy and enables designers to create precise, compact
systems. With an operational current consumption of just 1.6 mA, TLE/TLI/TLV496x-xM/L products can cut energy
consumption up to 50 percent compared with similar competitor products. Thanks to its small magnetic hysteresis,
the family paves the way for precise switching points in systems. The integrated temperature profile compensates
magnetic dris and enables stable performance over temperature and lifetime.
TLE/TLI/TLV496x-xM products come in the small SOT23 package. The sensors also feature an integrated functionality
test for better system control.
Features
› Current consumption of just 1.6 mA
› 3 to 32 V supply voltage range (over voltage up to 42 V)
› 7 kV ESD protection (HBM)
› Overtemperature and overcurrent protection
› Temperature compensation
› Smallest SOT23 package
› Dedicated products for industrial applications (TLI496x)
› AEC-Q100 qualified
› Electrical drives
Applications
› Window lier (index counting)
› Power closing (index counting)
› Gear stick (position detection)
› Seat belt (position detection)
› BLDC commutation
(e.g. wiper seat belt pretentioner, pump, seating)
› Service robots
› Power tools
› White goods
www.infineon.com/Hall-switches
www.infineon.com/magnetic-sensors
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
352
For more details on the product,
click on the part number.
XENSIV™ magnetic position sensors
TLE/TLI4963/65-xM
5 V high-precision automotive/industrial Hall-eect sensors
By oering an excellent magnetic behavior Infineon’s switches are ideally suited for:
› Index counting application with a pole wheel
› Rotor position detection (BLDC motors)
› Open/close detection
TLV496x-xTA/B
Precision Hall-eect sensor for consumer applications in leaded package
Features
› 3.0 to 5.5 V operating supply voltage
› Low current consumption 1.4 mA
› ESD protection 4 kV HBM
› Active error compensation (chopped)
› High stability of magnetic thresholds
› Low jitter (typ. 0.35 μs)
› Operating temperature range:
– from -40 to +170°C (TLE496x-xM)
– from -40 to +125°C (TLI496x-xM)
› Small SMD package SOT23
› TLE: AEC-Q100 qualified
› TLI: JESD47 qualified
Features
› 3.0 to 26 V operating supply voltage
› Low current consumption 1.6 mA
› ESD protection 4 kV HBM
› Operating temperature range from -40 to +125 °C
› Leaded package TO92S
Applications
› BLDC motor commutation for consumer
devices (e.g. e-bikes, fans, aircons)
› Position detection e.g. flaps and
control buttons
Product Type Operating point BOP Release point BRP Hysteresis BHY Automotive Industrial Package
TLE4963-1M Latch 2.0 -2.0 4.0 ✓ – SOT23
TLE4963-2M Latch 5.0 -5.0 10.0 ✓ – SOT23
TLE4965-5M Unipolar switch 7.5 5.0 2.5 ✓ – SOT23
TLI4963-1M Latch 2.0 -2.0 4.0 – ✓ SOT23
TLI4963-2M Latch 5.0 -5.0 10.0 – ✓ SOT23
TLI4965-5M Unipolar switch 7.5 5.0 2.5 – ✓ SOT23
Product Type Operating point BOP Release point BRP Hysteresis BHY Consumer Industrial Package
TLV4961-1TA Latch 2.0 -2.0 4.0 ✓ TO92S-3-1 TO92S-3-1
TLV4961-1TB Latch 2.0 -2.0 4.0 ✓ TO92S-3-2 TO92S-3-2
TLV4961-3TA Latch 7.5 -7.5 15.0 ✓ TO92S-3-1 TO92S-3-1
TLV4961-3TB Latch 7.5 -7.5 15.0 ✓ TO92S-3-2 TO92S-3-2
TLV4964-4TA Unipolar switch 10.0 8.5 1.5 ✓ TO92S-3-1 TO92S-3-1
TLV4964-4TB Unipolar switch 10.0 8.5 1.5 ✓ TO92S-3-2 TO92S-3-2
TLV4964-5TA Unipolar switch 7.5 5.0 2.5 ✓ TO92S-3-1 TO92S-3-1
TLV4964-5TB Unipolar switch 7.5 5.0 2.5 ✓ TO92S-3-2 TO92S-3-2
TLV4968-1TA Latch 1.0 -1.0 2.0 ✓ TO92S-3-1 TO92S-3-1
TLV4968-1TB Latch 1.0 -1.0 2.0 ✓ TO92S-3-2 TO92S-3-2
www.infineon.com/Hall-switches
www.infineon.com/magnetic-sensors
353
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XENSIV™ magnetic position sensors
TLx4966
Two-in-one double Hall sensor
Features
› Two Hall probes for information on speed and direction
› Excellent matching between the two Hall probes
› Hall plate distance of 1.45 mm
› Outstanding quality
› TSOP6 package
› TLE: AEC-Q100 qualified
› TLI: JESD47 qualified
Applications
› Window lier
› Sunroof
› Automatic tailgate
› Automated doors
› Sun blinds
› Garage doors
www.infineon.com/Hall-switches
www.infineon.com/magnetic-sensors
Product Production
samples
Temperature
range
[°C]
Operating
voltage
[V]
Magnetic
thresholds
Output Comment Package
TLI4966G Available -40 to +125 2.7–24 Bop: +7.5 mT
Brp; -7.5 mT
Speed and
direction
› Horizontal Hall plates
› For industrial application
› SMD package
TSOP6-6
TLE4966G Available -40 to +150 2.7–24 Bop: +7.5 mT
Brp; -7.5 mT
Speed and
direction
› Horizontal Hall plates
› SMD package TSOP6-6
TLE4966-2G Available -40 to +150 2.7–24 Bop: +7.5 mT
Brp; -7.5 mT
Speed and
speed
› Horizontal Hall plates
› SMD package TSOP6-6
TLE4966-3G Available -40 to +150 2.7–24 Bop: +2.5 mT
Brp; -2.5 mT
Speed and
direction
› Horizontal Hall plates
› SMD package TSOP6-6
TLE4966V-1G Available -40 to +150 3.5–32 Bop: +2.5 mT
Brp; -2.5 mT
Speed and
direction
› Horizontal Hall plates
› SMD package TSOP6-6
TLE4966L Available -40 to +150 2.7–24 Bop: +7.5 mT
Brp; -7.5 mT
Speed and
direction
› Horizontal Hall plates
› Leaded package SSO-4
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
354
For more details on the product,
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XENSIV™ magnetic position sensors
Linear Halls
TLE499x family: programmable analog/digital linear Hall sensor family
Features
› Best-in-class accuracy with low dri of output
signal temperature range lifetime (including stress
compensation in TLE4998)
› Programmable transfer function (gain, oset),
clamping, bandwidth and temperature characteristics
› AEC-Q100 qualified
› Available in various packages including SSO-3-9
with two integrated capacitors to improve ESD and
ESC behavior
› Dual-die SMD package
› TLE4997, TLE4998 ISO26262 ready
› TLE4999I3 fully ISO26262 compliant
Applications
› Detecting linear and angular position
› Detecting pedal and throttle position
› Steering torque measurement
› Headlight leveling
› High-current sensing
› Seat position and occupant detection
› Suspension control
› Detecting gear stick/lever positions
› Detecting liquid levels in fuel tanks
› Current sensing e.g. for battery management
Infineon’s family of TLE499x linear Hall ICs is tailored to the needs of highly accurate angular and linear position
detection and current measurement applications. Each product measures the vertical component of a magnetic field
and outputs a signal that is directly proportional to the magnetic field. These programmable linear Hall sensors come
with dierent interface options: TLE4997 features ratiometric analog output, while TLE4998P comes with pulse width
modulation (PWM), TLE4998S with single edge nibble transmission (SENT) and TLE4998C with short PWM codes (SPC).
These high-precision 12-bit resolution linear Hall sensors feature EEPROM memory for flexible programming across a
wide range of parameters.
Thanks to digital signal processing based on a 20-bit DSP architecture plus digital temperature compensation,
these sensors deliver outstanding temperature stability compared with similar compensation methods. TLE4998 also
includes stress compensation to withstand stress eects from the package, such as moisture, thus ensuring best-in-class
accuracy over the device’s lifetime.
Product Programmable Number of pins
Sensitivity
(programmable range)
Magnetic
oset
Supply voltage
(extended range)
Automotive ISO26262 Interface Package
TLE4997 EEPROM 3/Single die
SMD 8
±12.5 to
±300 mV/mT < ±400 µT 5 V ±10% (7 V) l–– Analog SSO-3-10
TDSO-8
TLE4998P EEPROM 3/4/Single die
SMD 8
±0.2 to
±6%/mT < ±400 µT 5 V ±10% (16 V) lReady PWM
SSO-3-10
SSO-4-1
SSO-3-9
(2 capacitors)
TDSO- 8
TLE4998S EEPROM 3/4/Single die
SMD 8 ±8.2 to ±245 LSB12/mT < ±400 µT 5 V ±10% (16 V) lReady SENT
SSO-3-10
SSO-4-1
SSO-3-9
(2 capacitors)
TDSO-8
TLE4998C EEPROM 3/4/Single die
SMD 8 ±8.2 to ±245 LSB12/mT < ±400 µT 5 V ±10% (16 V) lReady SPC
SSO-3-10
SSO-4-1
SSO-3-9
(2 capacitors)
TDSO-8
TLE4999I3 EEPROM 3
±73.72 to
±147.44 * LSB13/mT < ±300 µT
5.5–7 V ±10% (16 V)
lCompliant PSI5 SSO-3-12
www.infineon.com/linear-hall
www.infineon.com/magnetic-sensors
355
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XENSIV™ magnetic position sensors
Dual linear Halls
Two sensors in one SMD package
The SMD package (TDSO) includes two independent sensors with separate power supply and separate signal outputs.
Due to special mounting technology, Infineon is able to keep dual-sensor package size very small to enable compact
PCB layouts and small magnet sizes.
Infineon oers a wide range of Hall sensors in the TDSO package. The combination of two sensors in one package
oers sensors redundancy, a feature which is especially interesting for new generation EPS steering systems with
increased ISO26262 requirements and other safety critical applications. All sensors are automotive qualified.
Most products are also available as single-sensor solution with only one sensor. The newest member of the TLE499x
family, the TLE4999I3, is a fully ISO26262 compliant linear Hall sensor that includes 2 sensor channels on one chip.
The SSO-3 package allows PCB-less application flexibility and the PSI5 interface enables low EMI at high speed
communication with minimum wiring.
Features
› Two sensors in one package
› Separate power supply and signal output
› AEC-Q100 qualified
› Temperature range from -40 to +125°C
› Outstanding quality
› Single-sensor versions available
› 16-pin and 8-pin versions available
› ISO26262 ready
› TLE4999I3 ISO26262 compliant
Automotive applications
› Steering torque systems
› Pedal position
› Any other safety critical application
Product Interface Dual-/
single-sensor
available
ISO26262 Package
TLE4997A8D Analog yes/yes Ready TDSO-8
TLE4998P8D PWM yes/yes Ready TDSO-8
TLE4998S8D SENT yes/yes Ready TDSO-8
TLE4998C8D SPC yes/yes Ready TDSO-8
TLE4999I3 PSI5 monolithic * Compliant SSO-3
* 2 sensor channels on one chip
www.infineon.com/linear-hall
www.infineon.com/magnetic-sensors
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
356
For more details on the product,
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Angle sensors
Compact designs in small outline packages
Highest variety - low end to high end, standardized and specialized in all four magnetic
technologies: Hall, GMR, AMR and TMR
Infineon's magnetic sensor products TLE5501, are fast analogue TMR-based angle sensors dedicated to automotive
applications. Their fields of use range from steering angle applications, with the highest functional safety requirements,
to motors for wipers, pumps and actuators and electric motors in general. They are also ready to be used in industrial
and consumer applications like robotics or gimbal. Angle sensors detect the orientation of an applied magnetic field by
measuring sine and cosine angle components with monolithically integrated magneto resistive elements.
Infineon's iGMR sensors are ideal for applications with a wide angle range, such as BLDC motors or steering sensors.
They are pre-calibrated and ready to use. Dierent levels of signal processing integration enable designers to optimize
system partitioning. The XENSIV™ iAMR sensors also perfectly fit applications with the highest accuracy requirements,
as they oer best performance over temperature, lifetime and magnetic field range.
SPI = Serial peripheral interface
IIF = Incremental interface
PWM = Pulse width modulation
*For more information on the product, contact our product support
Product Technology Die configuration ISO26262 Sin/cos output Angle output Second interface Accuracy Package
TLE5009 GMR Single die Ready Analog sin/cos – – 0.9° DSO-8
TLE5009A16(D) * GMR Dual die Ready Analog sin/cos – – 1.0° TDSO-16
TLE5011 GMR Single die Ready SSC (SPI) – – 1.6° DSO-8
TLI5012B GMR Single die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.9° DSO-8
TLE5012B(D) GMR Single and dual die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.0° DSO-8/ TDSO-16
TLE5014C16(D) GMR Single and dual die Compliant – SPC – 1.0° TDSO-16
TLE5014P16(D) GMR Single and dual die Compliant – PWM – 1.0° TDSO-16
TLE5014S16(D) GMR Single and dual die Compliant – SENT – 1.0° TDSO-16
TLE5014SP16(D) * GMR Single and dual die Compliant – SPI – 1.0° TDSO-16
TLE5109A16(D) * AMR Single and dual die Ready Analog sin/cos – – 0.5° TDSO-16
TLE5309D AMR + GMR Dual die Ready Analog sin/cos SSC (SPI) – AMR 0.5°, GMR 1.0° TDSO-16
TLE5501 TMR Single die Compliant Analog sin/cos – – 1.0° DSO-8
iGMR, iAMR and iTMR based angle sensors
Diverse redundant sensor with analog and digital interface
XENSIV™ magnetic position sensors
www.infineon.com/angle-sensors
www.infineon.com/magnetic-sensors
357
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iTMR based angle sensors
Tunneling Magneto Resisitive (iTMR) technology is oering high sensing sensitivity with a high output voltage,
reducing the need for an internal amplifier. Thus, the sensor can be connected directly to the microcontroller without
any further amplification. In addition, iTMR technology shows a very low temperature dri, reducing external
calibration and compensation eorts. The iTMR technology is also well known for its low current consumption.
TLE5501
With the TLE5501 products, Infineon is currently launching the first angle sensor products based on
iTMR technology.
TLE5501 is available in two versions.
TLE5501 - product versions with dierent pin out:
› TLE5501 E0001: pin-compatible to TLE5009
automotive qualified acc. AEC-Q100
› TLE5001 E0002: decoupled bridges for redundant external
angle calculation and highest diagnostic coverage,
realizing ISO26262-compliant development ASIL D
Features
› Large output signals of up to 0.37 V/V for direct microcontroller connection
› Discrete bridge with dierential sine and cosine output
› Very low supply current: ~2 mA
› Magnetic field range (20-100 mT)
› Typ. angle error ~ 1.0 ° (overtemperature and lifetime)
› DSO-8 package
› AEC-Q100, grade 0: TA = -40°C to 150°C (ambient temperature)
› For TLE5501 E0002:
– Reaching ASIL D with just one single sensor chip
– ISO26262-compliant development ASIL D
Applications
› Steering angle sensor
› BLDC motor commutation (e.g. wipers, pumps and actuators)
› Angular position sensing for e.g. robotics or gimbal
› Electric motors
› Industrial automation
› Safety applications
XENSIV™ magnetic position sensors
www.infineon.com/angle-sensors
www.infineon.com/magnetic-sensors
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
358
For more details on the product,
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TLE5014(D)
Digital iGMR sensor with an easy-to-use plug-and-play concept for highest functional safety applications
All XENSIV™ TLE5014 angle sensors are available as single and dual die products. The products come pre-configured
and pre-calibrated as plug-and-play sensors and are easy to use. Customers can choose between the interfaces SENT,
PWM, SPC an SPI. On top of those protocol options, the sensors can be adapted to any kind of application setup via
their programmable E²PROM interfaces. TLE5014 magnetic angle sensors meet ISO26262 ASIL C for the single die
and ISO26262 ASIL D for the dual die versions. All products are ready for applications with the highest functional
safety requirements. The sensors show an extremely small angle error of less than 1° across the entire temperature
profile and lifetime. This is particularly helpful in applications with the need for very accurate position sensing such
as steering angle sensing or motor commutation. Further application areas range from rotor position measurement,
electric power steering (EPS), pedal position to any other kind of position measurement.
Features
› Easy-to-use, plug-and-play sensors, pre-configured and pre-calibrated
› Oering high flexibility:
– Available as single and dual die products
– 12bit digital interface with protocol options PWM, SENT, SPC and SPI
– E2 PROM and look-up table for customer configuration and calibration
› High angle accuracy: max. 1.0° over temperature and lifetime
› High voltage capability up to 26 V
› Development fully compliant with ISO26262
– Developed acc. ASIL D level
– Dual die sensors reaching ASIL D, single die sensors ASIL C metrics
› Safety manual and safety analysis summary report available on request
Applications
› Steering angle sensing (SAS)
› Motor commutation
› Rotor position measurement
› Pedal position
› Safety applications
› Any other kind of high-accuracy position measurement
TLE5109A16(D)
Analog iAMR sensor with temperature compensation
Features
› Features a dierential or single-ended analog interface for sine and cosine values
› Internal temperature dri compensation for gain and oset
› Also available as a dual-sensor package
› ISO26262 ready
› Typical 0.1” angle error over lifetime and temperature range aer compensation (max 0.5”)
› Available as single and dual die product
S
N
X SPI
Y
CORDIC
A/D
A/D
co
s
sin
X
Y
S
N
XENSIV™ magnetic position sensors
www.infineon.com/angle-sensors
www.infineon.com/magnetic-sensors
*Giant Magneto resistance
359
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The TLV493D-A1B6 sensor realizes an accurate three-dimensional sensing with extremely low power consumption in
a small 6-pin package. Capable of detecting the magnetic field in the x, y, and z-direction, the sensor is ideally suited
for the measurement of linear, rotation or 3 dimensional movements. Thanks to its small package and low power
consumption, the TLx493D-AxB6 can be used in new applications, replacing potentiometer and optical solutions.
Featuring contactless position sensing and high temperature stability of the magnetic threshold, the sensor allows
systems getting smaller, more accurate and more robust.
While the TLV493D-A1B6 just supports a typical value for the linear magnetic range of ±130 mT, the TLI493D-A2B6
specification
includes also a minimum value of ±160 mT.
With the TLI493D-A2B6, a broader microcontroller compatibility as well an enhanced feature set is included.
1) Half range mode
Features
› 3D magnetic sensing
› Integrated temperature sensing
› Low current consumption
– 7 nA in power-down mode
– 10 μA in ultralow power mode
› 2.8 to 3.5 V operating supply voltage
› Digital output via a 2-wire standard I2C interface
› Bx, By and Bz linear field measurement up to ±160 mT
› JESD47 qualified
› 12-bit data resolution for each measurement direction
› Various resolution options from 65 μT/LSB to 130 μT
› Operating temperature range from -40 to +125°C
New features
› Sensor address read back
› Short mode range setting, focusing on the half of the
magnetic
range, ensuring higher accuracy
› Higher update frequency allows for an application
field that requires faster update speed
› Angular mode (for x and y read-out only)
Applications
› Anti tempering protection in smart meters
› Joysticks e.g. for medical equipment, cranes,
CCTV-control, game consoles
› Control elements e.g. white goods multifunction knobs
XENSIV™ magnetic position sensors
3D magnetic sensors
TLV493D-A1B6/TLI493D-A2B6 for consumer and industrial market
www.infineon.com/3dmagnetic
www.infineon.com/magnetic-sensors
Rotation movement 3D movement Linear movement
Product Temperature
range
Qualification Linear magnetic
range
Resolution IDD Update rate Package Ordering code
TLV493D-A1B6 -40 … 125°C JESD47 ±130 mT (typ) 98 μT/LSB 7 nA – 3.7 mA 10 Hz – 3.3 kHz TSOP6 SP001286056
TLI493D-A2B6 -40 … 105°C JESD47 ±160 mT (min)
±100 mT (min)
130 μT/LSB
(65 μT/LSB) 1)
7 nA – 3.3 mA 10 Hz – 8.4 kHz TSOP6 SP001689844
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
360
For more details on the product,
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3D magnetic sensors
25
Product Temperature
range
Qualification
Linear
magnetic
range
Resolution IDD Update rate Wake-
up
Package
Ordering
code
TLE493D-A2B6
-40 … 125°C
AEC-Q100 ±160 mT (min) 130 µT/LSB
(65µT/LSB)1)
7 nA – 3.3 mA 10 Hz – 8.4 kHz No TSOP6 SP001689848
TLE493D-W2B6 A0
TLE493D-W2B6 A1
TLE493D-W2B6 A2
TLE493D-W2B6 A3
-40 … 125°C
AEC-Q100 ±160 mT (min)
±100 mT (min)
130 µT/LSB
(65µT/LSB)1) 7 nA – 3.3 mA 0.05 Hz – 8.4 kHz Yes TSOP6
SP001655334
SP001655340
SP001655344
SP001655348
1) Half range mode
TLE493D-A2B6/W2B6
3D magnetic sensors for automotive low-power applications
The TLE493D-x2B6 enables for all kind of automotive control
element applications within the passenger compartment
or under the hood with a temperature range of -40 to +125°C
with linear magnetic range requirements up to ±160 mT.
www.infineon.com/3Dmagnetic
Features
› 3D magnetic sensing
› Integrated temperature sensing
› 2.8 to 3.5 V operating supply voltage
› Low current consumption
– 0.007 µA in power-down mode
– 10 µA in ultra-low power mode
– Up to 10 power modes
› Digital output via a 2-wire standard I2C interface
› Bx, By and Bz linear field measurement ±160 mT
› AEC-Q100 qualified
› 12-bit data resolution for each measurement direction
› Various resolution options from 67 µT/LSB to 134 µT
› Operating temperature range up to -40 to +125°C
The TLE493D-A2B6 features include a sensor address read back feature for additional communication verification, a half
range mode focusing to half of the magnetic range ensuring higher accuracy and an angular mode (for x and y read out only).
With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dynamic wake up feature.
Four pre-programmed address options (A0-A3) will be available, enabling for a fast start up initialization, when used in I2C
bus configurations. It also includes enhanced test options and a safety documentation is available to enable the usage of
this sensor in the context of ASIL B systems.
Applications
› Control elements for infotainment/navigation systems, air
conditions, multifunctional steering wheels, seat controls
› Top column modules e.g. direction indicator,
wiper control
› Gear stick position sensing
Sensor_Solutions_BR-2018.indb 25 23.07.2018 15:55:49
The XENSIV™ sensor TLE493D-A2B6 features include a sensor address read-back feature for additional communication
verification, a half range mode focusing to half of the magnetic range, ensuring higher accuracy and an angular mode (for x
and y readout only).
With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dynamic wake up feature.
Four pre-programmed address options (A0-A3) will be available, enabling for a fast start-up initialization, when used in I
2
C
bus configurations. It also includes enhanced test options, and a safety documentation is available to enable the usage of this
sensor in the context of ASIL B systems.
Applications
› Control elements for infotainment/navigation systems, air conditions, multifunctional steering wheels, seat controls
› Top column modules e.g. direction indicator, wiper control
› Gear stick position sensing
www.infineon.com/3dmagnetic
www.infineon.com/magnetic-sensors
3D magnetic sensors
TLE493D-A2B6/W2B6 for automotive low power applications
Infineon's TLE493D-x2B6 enables for all kind of automotive control
element applications within the passenger compartment
or under the hood with a temperature range of -40 to +125°C,
with linear magnetic range requirements up to ±160 mT.
XENSIV™ magnetic position sensors
Features
› 3D magnetic sensing
› Integrated temperature sensing
› 2.8 to 3.5 V operating supply voltage
› Low current consumption
– 0.007 μA in power-down mode
– 10 μA in ultralow power mode
– Up to 10 power modes
› Digital output via a 2-wire standard I2C interface
› Bx, By and Bz linear field measurement ±160 mT
› AEC-Q100 qualified
› 12-bit data resolution for each measurement direction
› Various resolution options from 67 μT/LSB to 134 μT
› Operating temperature range from -40 to +125°C
361
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www.infineon.com/speed-sensors
www.infineon.com/magnetic-sensors
Magnetic speed sensors
Easy to use, robust and cost-eective sensors for speed measurement
Infineon's Hall- and GMR-based magnetic speed sensors are designed to measure speed in safety and powertrain
applications such as speedometers, ABS, camshas/crankshas and automatic transmissions. They are also used
in similar applications in the industrial sector. The sensors use a ferromagnetic gear tooth or encoder structure to
measure linear or rotational speed and position. Hall sensor measuring rotational speed with a gear tooth and a
magnetic encoder wheel. The majority of sensors also feature additional benefits such as integrated capacitors
(C- types) for high EMC robustness and the highest levels of ESD protection.
Modern powertrain systems rely on magnetic speed sensors, along with automotive pressure sensors, to achieve the
required CO2 targets and smart powertrain solutions. Infineon oers a broad variety of magnetic speed sensors for
camsha, cranksha and transmission applications.
This sensor is specially designed to provide an easy-to-use, robust and cost-eective solution for vehicle or industrial
speed sensing applications. The TLE4922 can, therefore, be back-biased using a simple, low-cost bulk magnet, while
providing a good air gap performance and switching accuracy. Its hidden adaptive hysteresis and calibration algorithm
enable good accuracy over air gap jumps and immunity to vibration and run-out events.
TLE4922
Highly robust, easy-to-use mono-Hall speed sensor with twist-independent mounting
Features
› Large operating air gap capability
› Twist-independent mounting
› Hidden adaptive hysteresis
› Low current consumption
› Reverse magnetic polarity capability
› Advanced protection technology
– Reverse voltage protection at VS-pin
– Short-circuit protection
– Overtemperature protection
› Wide operating temperature ranges of -40°C ≤ Tj ≤ ±150°C
› High ESD robustness up to ±4 kV HBM
› 3-wire PWM voltage interface
Applications
› Two-wheeler
› Automotive vehicle speed
XENSIV™ magnetic speed sensors
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
362
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The TLE4929 is an active Hall sensor ideally suited for cranksha applications and similar industrial applications,
such as speedometer or any speed sensor with high accuracy and low jitter capabilities.
TLE4929
Fully programmable cranksha sensor
Features
› Dierential Hall speed sensor to measure speed and position of
tooth/pole wheels
› Switching point in the middle of the tooth enables backward compatibility
› Robustness over magnetic stray-field due to dierential sensing principle
› Digital output signal with programmable output-protocol including
diagnosis interface
› Direction detection and stop-start-algorithm
› High accuracy and low jitter
› High sensitivity enable large air gap
› End-of-line programmable to adapt engine parameters
› Can be used as a dierential camsha sensor
› Automotive operating temperature range
Product Automotive Industrial Sensor technology AEC-Q100 qualified RoHS HAL free Product status
TLE4922 ✓ ✓ Mono-Hall ✓ ✓ ✓ In production
TLE4929 ✓ ✓ Dierential Hall ✓ ✓ ✓ In production
XENSIV™ magnetic speed sensors
www.infineon.com/speed-sensors
www.infineon.com/magnetic-sensors
363
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
364
For more details on the product,
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365
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Intuitive sensing
Intuitive sensing
Giving things human-like senses for a better contextual awareness
Imagine a world where technology is unobtrusive and
seamlessly integrated into our lives. Where intentional/
deliberate communication between people and devices
is no longer necessary. In this world, there is no need
to push buttons or issue commands in order to activate
devices, because technology is capable of interpreting
implicit intentions and context. This enhances the user
experience and makes it more natural – it almost seems
like the devices around us intuitively understand what
we want them to do. At Infineon, this future is already
becoming reality. We develop sensor solutions that
enable simple and eortless user interactions with all
kinds of smart devices. Bridging the gap between the real
and digital worlds, our technology is developed to make
life easier, safer, greener and more eicient. Our intuitive
sensing solutions are at the very core of this mission.
Reflecting our belief that the essential value of sensor
technology lies in making our lives more convenient
through seamless, natural interactions between people
and sensing devices, our aim is to leave you free to focus
on what really matters in life.
Choose your type of sense
Thanks to industry-leading technologies Infineon
XENSIV™ sensors are exceptionally precise. They are
the perfect fit for various customer applications in
automotive, industrial and consumer markets.
This interaction oen depends on the interpretation and
merging of information from dierent sources. Machines
cannot yet read our minds and do not always have the
information necessary to correctly evaluate a given
situation. So, we sometimes have to explicitly tell devices
what we want them to do. This can be inconvenient and
time-consuming. Inspired by human nature, Infineon
intuitive sensing solutions are designed to take the
complexity out of our interaction with devices.
Reflecting a holistic approach, we combine dierent
sensors with state-of-the-art soware to create a
comprehensive picture of the world around us. By fusing
several smart sensors into one coherent intelligent
system, our intuitive sensing solutions simplify complex
technical processes and enable people to eortlessly
interact with devices. These smart devices intuitively
sense the world around them, determining what is
expected and needed from them.
Today, sensors already enable interactions between people and devices
Pressure sensors
Our digital barometric
pressure sensors give
designers the best choice
when it comes small form
factors, highest precision
and accuracy over a wide
temperature range, fast
read-out speeds and low
power consumption.
Radar sensors
Radar supports existing
applications while
providing features that
enable completely new
use cases. It measures
velocity, range and
angle, both horizontal
and vertical, for precise
position mapping and 3D
tracking.
MEMS microphones
Digital MEMS microphones
overcome existing audio
chain limitations and are
designed for applications
where low self-noise
(high SNR), wide dynamic
range, low distortions and
a high acoustic overload
point are required.
PAS CO2 sensor
Leveraging photoacoustic
spectroscopy (PAS),
Infineon has developed an
exceptionally small CO₂
sensor that overcomes
existing size, cost and
performance challenges.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
366
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XENSIV™ MEMS microphone
XENSIV™ MEMS microphone
Time to debottleneck your audio chain
The popularity of voice user interfaces and the usage of audio recording to share information and experiences are
increasing dramatically. However, the performance of microphones oen limits the potential of today’s cutting-edge
devices. Not anymore!
Infineon's XENSIV™ MEMS microphones introduce a new performance class for digital MEMS microphones that
overcome existing audio chain limitations. IM69D130 is designed for applications where low self-noise (high SNR),
wide dynamic range, low distortions and a high acoustic overload point are required.
Features
› 69 dB(A) signal-to-noise ratio (SNR)
› Below 1 percent distortions at 128 dBSPL (130 dBSPL AOP)
› Digital (PDM) interface with 6 µs group delay at 1 kHz
› Tight sensitivity (-36 ±1 dB) and phase (± 2 deg) tolerances
› 28 Hz low frequency roll-o
› 4.0 x 3.0 x 1.2 mm package
Benefits
› High fidelity and far field audio recording
› Matched, noise and distortion free audio signals for
advanced audio processing
› Ultralow group delay for latency-critical applications
› No analog components required
Don’t miss a single thing!
With XENSIV™ MEMS microphones, you can create a new user
experience benchmark in audio recording.
Talk to tomorrow and be heard!
With XENSIV™ MEMS microphones, you can define the benchmark in
speech recognition for a new user experience.
Hear nothing but your favorite beats!
With XENSIV™ MEMS microphones, you can create headsets oering
users a benchmark noise cancellation experience.
www.infineon.com/microphones
Typical applications
› High quality audio capturing: e.g. cameras, camcorders, conference systems
› Voice user interface: e.g. smart speaker, home automation and IoT devices
› Active noise cancellation: headphones and earphones
› Audio pattern detection: predictive maintenance, security or safety applications
367
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XENSIV™ MEMS microphone
Infineon's dual backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar as
utilized in studio condenser microphones, and results in high linearity of the output signal within a dynamic range of
105 dB. The microphone noise floor is at 25 dB[A] (69 dB[A] SNR) and distortion does not exceed 1 percent even at sound
pressure levels of 128 dB SPL (AOP 130 dB SPL). The flat frequency response (28 Hz low-frequency roll-o) and tight
manufacturing tolerance result in close phase matching of the microphones, which is important for multi-microphone
(array) applications.
Devices with voice user interface
TV, laptop and set top box
+ Highest beam-forming precision + Best speech recognition
+ Sensitive to soest audio signals
+ Extended voice pickup distance
+ Best noise attenuation
+ Smallest pattern deviation detection
+ Best audio quality
Audio
Digital voice assistance and robots
Security
Smart home appliances
Headsets Industry 4.0
+ Ultraclear voice pickup
Conference
www.infineon.com/microphones
Product portfolio
Maximum noise rejection
Ultra precise corner frequency
28 Hz
Ultralow distorsion
(<1% THD)
IM69D130: 128dBSPL
IM69D120: 118dBSPL
AIN(+)
AIN(-)
Class leading
dynamic range
IM69D130: 105dB
IM69D120: 95dB
Phase matched microphones
+/- 2deg @1kHz
Product OPN Package Current consumption Sensitivity Signal to noise Supply voltage
IM69D130 IM69D130V01XTSA1 LLGA-5-1 980 µA -36 dBFS 69 dB 1.62-3.6 V
IM69D120 IM69D120V01XTSA1 LLGA-5-1 980 µA -26 dBFS 69 dB 1.62-3.6 V
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
368
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XENSIV™ pressure sensors
XENSIV™ digital barometric pressure sensor
For mobile and wearable devices
Infineon’s digital barometric pressure sensor family is the best choice for mobile and wearable devices due to its small form
factor, high precision and low power consumption. Pressure sensing is based on capacitive technology which guarantees
ultrahigh precision (±2/±5 cm) and relative accuracy (±0.6 hPa) over a wide temperature range. The sensor’s internal signal
processor converts the output from the pressure and temperature sensor elements to 24-bit results. Each pressure sensor
has been calibrated individually and contains calibration coeicients. The coeicients are used in the application to convert
the measurement results to true pressure and temperature values. All sensors have a FIFO that can store the latest 32
measurements. Since the host processor can remain in a sleep mode for a longer period between readouts, a FIFO can reduce
the system power consumption. Sensor measurements and calibration coeicients are available via the serial I2C/SPI interface.
DPS310
Barometric pressure sensor with very low power consumption, recommended for applications where power
consumption is critical and the highest precision in pressure metering is required.
DPS422
Monolithic chip solution that has an ultrasmall critical area and a very thin package (0.73 mm typ.). Beneath high
precision pressure metering, DPS422 oers also highly accurate absolute temperature sensing (±0.4ºC), which is required in
applications like weather stations, thermostats, etc. It can be used in applications such as weather stations/smart thermostats
and oers additional features by pressure sensing (e.g. intruder detection, weather forecast).
DPS368
DPS368 oers the best-in-class resolution (±2 cm), a very fast read-out speed and a low current consumption. The sensor can
be used in harsh environment, as it is robust against water (IPx8 - 50 m under water for 1 hour), dust and humidity. The small
package size saves up to 80 percent of the space and makes the DPS368 ideal for mobile applications and wearable devices.
Typical applications
› Drones: altitude detection and height stability
› Health and fitness: accurate elevation gain and step counting (e.g. for smart watches)
› Outdoor navigation: GPS start-up time/accuracy improvement; dead reckoning (e.g. in tunnels)
› Indoor navigation: floor detection e.g. in shopping malls and parking garages
› Smart home: micro weather forecasting; room temperature control; intruder detection
› Air flow control: Smart filter replacement alarm (e.g. in home appliances); predictive maintenance
› Health care: fall detection; respiratory devices; smart inhalers
Key product features DPS310 DPS422 DPS368
Package size
LGA 8-pin: 2.0 x 2.5 x 1.0 mm LGA 8-pin: 2.0 x 2.5 x 0.73 mm LGA 8-pin: 2.0 x 2.5 x 1.1 mm
Operating pressure range
300 … 1200 hPa
Operating temperature range
-40 … 85°C
Pressure level precision
± 0.005 hPa (or ±0.05 m) ± 0.002 hPa (or ±0.02 m)
Relative accuracy
± 0.06 hPa (or ±0.5 m)
Absolute accuracy
± 1 hPa (or ±8 m)
Temperature accuracy
0.5°C < 0.4°C 0.5°C
Pressure temperature sensitivity
0.5 Pa/K
Measurement time
3.6 ms (low precision); 27.6 ms (standard mode)
Average current consumption
@ 1 Hz sampling rate
1.7 μA pressure measurement, 1.5 μA temp.
measurement, standby 0.5 μA
1.7 μA pressure measurement, 2.0 μA temp.
measurement, standby < 1 μA
1.7 μA pressure measurement, 1.5 μA temp.
measurement, standby 0.5 μA
Supply voltage
VDDIO: 1.2 – 3.6 V; VDD: 1.7 – 3.6 V
Operating modes
Command (manual), background (automatic), standby
Interface
I2C and SPI, both with optional interrupt
www.infineon.com/pressuresensor
369
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XENSIV™ pressure sensors
Functional block diagram
Application circuit example (in IC configuration)
Pin configuration (top view)
DPS422 package drawingDPS310 package drawing DPS368 package drawing
www.infineon.com/pressuresensor
SCK
INT
SDA
I2C serial interface
C
SDO
SCK
SDI
CSB
GND
GND
VDD
VDDIO
Pressure sensor
Processor
VDDIO
1.7 … 3.6 V
1.2 … 3.6 V
C
R
VDDIO
R
N.C.
Interrupt (optional)
I2
C/SPI
VDDIO
VDD
Temperature
sensor Digital signal
processing
Calibration
coefficients
FIFO
Capacitive
pressure sensor
Digital core
Memory
interface
Voltage
regulators
Digital interface
MUX ADC
4
3
2
1
5
6
7
8
GND
CSB
SDI
SCK
VDD
GND
V
DDIO
SDO
Vent hole
Pin Name Function
1 GND Ground
2CSB Chip select
3 SDI Serial data in/out
4 SCK Serial clock
5 SDO Serial data out
6 VDDIO Digital interface supply
7 GND Ground
8 VDD Analog supply
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
370
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24 GHz radar sensor ICs
www.infineon.com/24GHz
XENSIV™ 24 GHz radar sensor ICs
Infineon oers a wide portfolio of mmWave radar sensors to address dierent customer requirements. The BGT24M/L
family is the largest and highest integrated 24 GHz radar transceiver family currently on the market, saving ~30 percent
board space compared to discrete lineups. Infineon provides a total of five 24 GHz industrial radar chips, providing a
range of dierent transmitter and receiver channel configurations, supporting dierent application requirements.
In addition to the BGT24M/L family of MMIC chips, Infineon provides a continuously expanding range of evaluation
and demonstration boards to support the testing and development of radar in multiple applications. All boards are
provided with base level soware to support the ease of use and faster time-to-market integration.
Utilizing our strong network of partners, the radar portfolio is extended to include a range of easy-to-integrate
modules. Each of them contains Infineon's 24 GHz MMIC.
Applications
› Building and smart home (IoT)
› Indoor/outdoor lighting
› Security
› UAV/multicopters
› Robotics
› Smart street lighting
Key benefits
› Direction, proximity and speed detection
› Hidden mounting capability
› Maintains operation through harsh weather conditions
› Motion tracking
› Sensitive enough to capture breathing and heartbeat
› Target positioning
› Adaptable to dierent application requirements
Intrusion detection
Air flight control
Streetlighting
Collision avoidance in
multicopters and robotics
People tracking and occupancy
detection in IoT/smart home
Gesture control on TV
Indoor and outdoor
lighting systems
Collision
avoidance
proximity sensor to
activate appliances BSD (blind spot detection) in the car
Intruder alarm/presence
detection in surveillance
371
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24 GHz radar sensor ICs
www.infineon.com/24GHz
Infineon BGT24M/L family of MMIC chips
Infineon's range of 24 GHz industrial radar chips provides five configurations of transmit and receiver channels,
ensuring that there is a chip to support your specific application. From basic applications such as motion detection
in security systems, which only requires one transmit and one receive channel, to more complex applications like 3D
positioning, which requires two or more receive channels, our range of radar chips supports all of your requirements.
Features Infineon MMIC Benefits
› 24 GHz ISM band operation for
motion, speed, direction movement
and distance measurements
› 5 MMIC chips available
› Highly integrated
› Long range distance detection of
moving objects up to 30 m
› Wide range speed detection
up to ±100 km/h
› Lower BOM costs
2.4 mm
2.4 mm
5.5 mm
4.5 mm
The BGT24LTR22N16 key features
› 24 GHz transceiver MMIC
› Fully integrated low phase noise VCO
› Integrated analog base band stage with
programmable gain and filter settings
› Bi-directional pin for synchronization
› Built in temperature compensation
circuit for VCO stabilization,
no PLL needed
› Low power consumption
› Fully ESD protected device
› Single ended RF and IF terminals
› Single supply voltage 1.5 V
Product Configuration Features
BGT24MTR11 1Tx + 1Rx › Measures not just motion, but also speed, direction, and distance
› Small form factor
› Resistance to moisture, dirt and temperature
› Increased area coverage
› Discrete design
› Energy savings
› Privacy protection
› Adaptable to dierent application requirements
› Highly integrated chips eliminating costly external components
BGT24MR2 2Rx
BGT24MTR12 1Tx + 2Rx
BGT24LTR11 1Tx + 1Rx
BGT24LTR22 2Tx + 2Rx
SPI Sensor
ADC BG/PTAT
DAC
Sync 1
Sync 1
PPF
HPF LPF
LPF
LPF
LPF
Trafo
Trafo
HPF
HPF
HPF
PS
PS
PPF
DAC
f-Div
/tbd
Power
Det.
Power
Det.
Trafo
Trafo
Trafo
Power
splitter
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
372
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24 GHz radar sensor
www.infineon.com/24GHz
24 GHz evaluation and demonstration boards
Infineon's range of 24 GHz evaluation and demo boards continues to expand to support the needs of our customers
and the increasing number of innovative ways radar is being incorporated into new applications.
Learn radar with Infineon on www.infineon.com/MakeRadar
For the first time we bring radar to makers and developers. Here you can test, develop, and learn radar and its applications.
At www.infineon.com/makeradar, you will see how simple it has become to work with ultrasmall radar sensors.
The board and data will flow to your browser for testing, and this is not all, if you want to take the next step just take
the available Arduino code examples and start your own project.
› Three system boards available
› All include 24 GHz radar and XMC™
microcontroller
› Kit contains user manual, GUI,
MATLAB compiler and Gerber files
› Soware available via
Infineon Toolbox
› Capability to detect motion, speed
and direction of movement
(approaching or retreating)
distance and angle of arrival based
on hardware
› Fast prototyping with available
soware
Features Infineon development kit Benefits
Sense2GOL Pulse (BGT24LTR11 + XMC4700) Distance2Go (BGT24MTR11 + XMC4200) Position2Go (BGT24MTR12 + XMC4700)
› Capability to detect motion, speed and direction of
movement (approaching or retreating)
› Detection range of 18 m for human target at a power
consumption < 5 mW
› High sensitivity of detection in comparison to PIR
› Arduino compatible microcontroller board (Arduino
standard connectors)
› Modulation parameters can be changed to suit the
application requirements
› Multiple current sensors for current consumption
monitoring and optimization
› Integrated multiple element patch antennas
› Capability to detect distance of multiple targets
› Capability to detect motion, speed and direction of
movement (approaching or retreating)
› Operates in harsh environments and detects
through non-metallic materials
› BGT24MTR11 – 24 GHz highly integrated
RF MMIC
› XMC4200 Arm® Cortex®-M4 –32-bit industrial
microcontroller
› Debug over Cortex 10 pin debug connector
› Integrated multiple element patch antennas
› Capability to detect and track position of multiple
targets
› Capability to detect distance of multiple targets
› Capability to detect motion, speed and direction of
movement (approaching or retreating)
› Operates in harsh environments and detects
through non-metallic materials
› BGT24MTR12 – 24 GHz highly integrated
RF MMIC
› XMC4700 Arm® Cortex®-M4 –32-bit industrial
microcontroller
› Debug over Cortex 10 pin debug connector
› Integrated multiple element patch antennas
Main applications
› Security
› Indoor and outdoor lighting
› Smart home
› Automatic door opener
› Intelligent switches
› Speed measurement
Main applications
› Drone: so landing/obstacle avoidance
› Smart toilets
› Tank level sensing
› Intelligent switches
Main applications
› Drone/robots: obstacle avoidance
› Security
› People tracking (IoT, smart home)
› Vital sensing
Board dimensions
› Board 55 mm x 85 mm
› Shield: 55 mm x 66 mm
Board dimensions
› Board 36 mm x 45 mm
Board dimensions
› Board 50 mm x 45 mm
Kit contents
› RF radar shield: SHIELD_BGT24LTR11
› Programmed controller board: RADAR BB XMC4700
› Micro USB cable
› Corner reflector
› SW GUI to operate kit
› Doppler FW and SW 1)
› Schematic and bill-of-materials of module
Kit contents
› User's manual
› Demonstration board
› Corner reflector
› SW GUI to operate kit
› FMCW FW and SW 1)
› Doppler FW and SW 1)
› Schematic and bill-of-materials of module
Kit contents
› User's manual
› Demonstration board
› Corner reflector
› SW GUI to operate kit
› FMCW FW and SW
› Doppler FW and SW
› Schematic and bill-of-materials of module
Demokit with SW, reference design
1) Usage of the FMCW and/or Doppler FW and SW requires agreeing to Infineon’s user’s agreement and licensing terms.
373
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24 GHz radar sensor
24 GHz modules
Partnering with the leading radar solution providers enables Infineon to connect our customers looking for turnkey
solutions and design support for a complete range of applications.
By integrating Infineon's 24GHz MMIC chip into the partners easy-to-use and simple-to-integrate modules the
complexity and time to market for a range of applications such as home automation, multicopter, robotics and
street lighting, are reduced.
Lighting
Security
Touch free switches
Door automation
New application or simple PIR replacement? Radar has it covered.
Radar, used in motion detection applications, increases accuracy when compared to passive infrared (PIR) technology,
allowing a more precise measurement of object detection, and providing new capabilities such as the detection of
speed and the direction of moving objects. Radar is also superior to camera-based systems by allowing detection of
the objects while keeping identities anonymous.
Visit the link below to view our network of partners who provide modules and design support for all 24GHz industrial
applications: www.infineon.com/24GHzpartners
› Complete module, including
radar MMIC, antenna options,
MCU signal processing options,
and SW options (Doppler, FSK
and FMCW versions available)
› Ease of design
› Turnkey solution, no need for
test and certification
Features Partner modules using
Infineon chips Benefits
www.infineon.com/24GHz
Module (RF module; RF module
+ MCU including SW)
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
374
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XENSIV™ 60 GHz radar sensor IC
Infineon’s innovative XENSIV™ 60 GHz radar chip enables things to see and revolutionizes the human-machine interface.
BGT60LTR11AIP * for consumer and IoT applications
With their small form factor and low power consumption, Infineon’s highly integrated radar sensor solutions bring
innovative, intuitive sensing capabilities to many applications. Radar has been demonstrated to be a powerful sen-
sor for short-range localization in surveillance, lighting and smart home appliances. And also for vital sign tracking in
consumer electronics, healthcare, driver assistance and industrial applications. The BGT60LTR11AIP * is the smallest
motion sensor in the market, featuring integrated antennas and integrated detectors. The device supports multiple
operating modes including fully autonomous motion sensing that does not require any SW or HW design in eort.
Block diagram
Product portfolio
Product Package
BGT60LTR11AIP * UF2BGA-42-1
*available Q3/2020
www.infineon.com/60GHz
60 GHz radar sensor
SPI
Trafo Trafo
Power
Del.
f-Div
PLL
FSM/
Controller
Clock
gen. BIST
Target
direct
Target
direct
LPF
ADC S&H
Pulse
gen. LPF
LPF
S&H
PPF
Ext. Quarz
VTUNE
LNAMPATX_DRV
PS
Automatic
opening system
Key benefits
Macro motions without microcontroller
No antenna design necessary
Can also measure micromotion, speed and distance when using a microcontroller
Key features
1 Transmit, 1 Receive
Integrated detectors
Small footprint: 6,7mm x 3,3mm
Radiated power = 8 dBm
Supports Doppler and FMCW modes of operation
Antenna in package
Low cost and high integration
Features and benefits
375
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Shield2Go
Shield2Go
Infineon’s Shield2Go boards oer a unique customer and evaluation experience – the boards are equipped with one Infineon IC
and come with a ready-to-use Arduino library. Customers can now develop their own system solutions by combining 2GO boards
together with Infineon MyIoT adapters. MyIoT adapters are gateways to external hardware solutions like Arduino and Raspberry PI,
which are popular IoT hardware platforms. All this enables the fastest evaluation and development of the IoT system.
Security
Sensors
OPTIGA™ Trust X Security Shield2Go
Product name: S2GO SECURITY OPTIGA X
SP: SP002349576
OPTIGA™ Trust E Security Shield2Go
Product name: S2GO_Security_OPTIGA_E
SP: SP001820138
S2GO Pressure Sensor DPS310
Product name: S2GO_PRESSURE_DPS310
SP: SP001777630
S2GO Pressure Sensor DPS422
Product name: S2GO PRESSURE DPS422
Featured product: XENSIV™ pressure sensor DPS422
OPN: S2GOPRESSUREDPS422TOBO1
TLI4970 Current Sense Shield2Go
Product name: S2GO_CUR-SENSE_TLI4970
SP: SP001823682
www.infineon.com/sensors2go www.infineon.com/s2go-myiot
S2GO Pressure Sensor DPS368
Product name: S2GO PRESSURE DPS368
Featured product: XENSIV™ pressure sensor DPS368
OPN: S2GOPRESSUREDPS368TOBO1
IM69D130 Microphone Shield2Go
Product name: S2GO MEMSMIC IM69D
SP: SP002851544
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
376
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Microcontroller
Sensors
MyIoT – Adapter
XMC 2Go Kit
Product name: KIT_XMC_2GO_XMC1100_V1
SP: SP001199544
MyIoT Adapter
Sales name: MYIOTADAPTERTOBO1
SP: SP002434972
Infineon’s 2Go boards oer a unique customer and evaluation experience – the boards
are equipped with one Infineon IC and come with a ready-to-use Arduino library.
Customers can now develop their own system solutions by combining 2Go boards
together with Infineon MyIoT adapters.
MyIoT adapters are gateways to external hardware solutions like Arduino and
Raspberry PI, which are popular IoT hardware platforms. All this enables the fastest
evaluation and development of IoT system.
Shield2Go
TLE4964-3M Hall Sense Shield2Go
Product name: S2GO_HALL_TLE4964-3M
SP: SP004308590
TLE493DW2B6 3DSense Shield2Go
Product name: S2GO_3D_TLE493DW2B6-A0
SP: SP004308594
TLE4966K Double Hall Shield2Go
Product name: S2GO_2_HALL_TLE4966K
SP: SP004308598
www.infineon.com/s2go-myiot
TLV493D 3DSense Shield2Go
Product name: S2GO_3D-SENSE_TLV493D
SP: SP001823678
TLI4971 Current Sense Shield2Go
Product name: S2GO_CUR-SENSE_TLI4971
SP: SP005345472
Shield2Go
377
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Sensor 2GO kits
Sensor 2GO kits
Infineon’s XENSIV™ sensor 2GO kits are budget-priced
evaluation boards that are already equipped with a
sensor combined with an Arm® Cortex®-M0 CPU. The
sensor 2GO kits provide a complete set of on-board
devices, including an on-board debugger. Build your own
application and gadget with the sensor 2GO kits.
Our 2GO kits are ready-to-use plug-and-play boards.
3D Magnetic Sensor 2GO kit
Product name: TLE493D-A2B6 MS2GO/TLE493D-W2B6 MS2GO/
TLV493D-A1B6 MS2GO
SP: SP001707582/SP001707578/
SP001707574
Features
› We oer three dierent derivatives
– TLE493D-A2B6 (three dimensional magnetic sensor)
– TLE493D-W2B6 (three dimensional magnetic sensor)
– TLV493D-A1B6 (three dimensional magnetic sensor)
› XMC1100 (Arm® Cortex™-M0 based)
› On-board J-Link Lite Debugger (Realized with XMC4200 Microcontroller)
› Power over USB (Micro USB), ESD and reverse current protection
› GUI for free download
TLI4970 current sensor 2GO kit
Product name: TLI4970050 MS2GO
SP: SP003119148
Features
› TLI4970-D050T4 (current sensor with digital interface)
› XMC1100 (Arm® Cortex®-M0 based)
› On-board J-link lite debugger (realized with XMC4200 microcontroller)
› Power over USB (micro USB), ESD and reverse current protection
› GUI for free download
TLI4971 Current Sensor 2GO kit
Product name: TLI4971_MS2GO
SP: SP00534547
Features
› XENSIV™ magnetic current sensor TLI4971-A120T
› Sensor board for high current capability (≤20 A)
› Complete evaluation set including control and debug
› First measurements possible within minutes
Speed Sensor 2GO kit
Product name: TLE4922 Speed-2-Go-Kit
SP: SP001624692
Features
› Budget-priced evaluation board for speed sensing
› Complete speed sensor incl. back-bias magnet, fixing and cable
› TLE4922 (active mono cell Hall sensor)
› XMC1100 (Arm® Cortex™-M0 based)
› On-board J-Link Lite Debugger (realized with XMC4200 microcontroller)
› Power over USB (Micro USB), ESD and reverse current protection
› GUI based tool for real in-application evaluation for free download
www.infineon.com/sensors2go
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
378
For more details on the product,
click on the part number.
Sensor 2GO kits
Sensor 2GO kits
Angle Sensor 2GO kit
Product name: TLE5012B_E1000_MS2GO/TLI5012B_E1000_MS2GO/
TLE5012B_E5000_MS2GO/TLE5012B_E9000_MS2GO
SP: SP002133956/SP002133960/SP002133964/SP002133968
Features
› Budget-priced evaluation board for angle and position sensing
› We oer three four derivatives:
– TLE5012B E1000 version: automotive predefined variant with SSC and IIF
communication protocols
– TLE5012B E5000 version: automotive predefined variant with SSC and PWM
communication protocols
– TLE5012B E9000 version: automotive predefined variant with SSC and SPC
communication protocols
– TLI5012B E1000 version: industrial predefined variant with SSC and IIF
communication protocols
› TLE5012B/TLI5012B GMR digital angle sensor
› XMC1100 (Arm® Cortex™-M0 based)
› On-board J-Link Lite Debugger (realized with XMC4200 microcontroller)
› The kit is compatible with the angle rotate knob for fast evaluation
› GUI based tool for real in-application evaluation for free download
www.infineon.com/sensors2go
MEMS 2Go
Product name: EVAL_IM69D130_FLEXKIT
SP: SP002153022
The flex evaluation kit allows simple and easy evaluation of XENSIV™ MEMS
microphone IM69D130. The flex board can be easily connected to audio testing
setup. The evaluation kit includes five IM69D130 mounted on flex board and
one adapter board.
Features
› Quick and easy evaluation of XENSIV™ MEMS microphones
› Flex dimensions: 25 x 4.5 mm
› Adapter dimensions: 20 x 15 mm
379
For more details on the product,
click on the part number.
Sensor 2GO kits
Linear slider for all 3D magnetic sensor 2GO kits and Shield2Go
Product name: LINEAR-SLIDER 2GO
SP: SP002043034
Features
› Easy mounting on all 3D magnetic sensor 2GO kits and Shield2Go
› First magnetic linear evaluations within minutes
› Use case: linear movements
› Linear slider with magnet – flexible setup: adaptable air-gaps, two dierent
magnetic strengths/materials and distance limiters
Out of sha adapter for all 3D magnetic sensor 2GO kits and Shield2Go
Product name: OUT OF SHAFT FOR 3D 2 GO
SP: SP003475178
Features
› Easy mounting on all 3D magnetic sensor 2GO kits and Shield2Go
› Use case: angle measurement in out of sha configuration with 3D Hall
sensor
› Three dierent out of sha configurations possible (x-z, y-z and x-y axis)
› Magnetic rotation bar with ring magnet included
Add ons for Sensor 2GO kits and Shield2Go
www.infineon.com/sensors2go
Joystick for all 3D magnetic sensor 2GO kits and Shield2Go
Product name: JOYSTICK FOR 3D 2 GO KIT
SP: SP001491834
Features
› Easy mounting on all 3D magnetic sensor 2GO kits and Shield2Go
› First magnetic joystick measurements within minute
Rotate knob for all 3D magnetic sensor 2GO kits, angle sensor 2GO kits and
3D magnetic sensor Shield2Go
Product name: ROTATE KNOB 3D 2 GO KIT
SP: SP001504602
Features
› Easy mounting on all 3D magnetic and angle sensor 2GO kits as well as 3D
magnetic sensor Shield2Go
› Rotate knob with magnet as used in control elements and push buttons
› Use cases 3D magnetic sensors: rotational and vertical movements of
control elements and push buttons
› Use cases angle sensors: simulates rotational movements for angle
measurements
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
380
For more details on the product,
click on the part number.
Sensor 2GO kits
www.infineon.com/sensors2go
HMI mini control with 4 directions and 360° rotation for all
3D magnetic sensor 2GO Kits and Shield2Go
Product name: MINI_CONTROL2GO
Features
› Easy mounting on all 3D magnetic sensor 2GO Kits and Shield2Go
› Use case: le/rigth/forwad and backward including 360° rotation at all positions
› Control element includes magnet
Linear control trigger for all 3D magnetic sensor 2GO Kits and Shield2Go
Product name: POWER_DRILL2GO
Features
› Easy mounting on all 3D magnetic sensor 2GO Kits and Shield2Go
› Use case: control trigger for e.g. power drill (linear position measurements
with 3D Hall sensor)
› Magnetic slider with magnet included
Human machine interface (HMI) direction indicator for all
3D magnetic sensor 2GO Kits and Shield2Go
Product name: DIR_INDICATOR2GO
Features
› Easy mountig on all 3D magnetic sensor 2GO Kits and Shield2Go
› Use case: human-machine interface (3x3 position matrix) for e.g.
automotive direction indicator
› Magnetic direction indicator with magnet included in handle bar
Add ons for Sensor 2GO kits and Shield2Go
381
For more details on the product,
click on the part number.
Infineon support for sensors
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/sensors
www.infineon.com/microphones
www.infineon.com/magnetic-sensors
www.infineon.com/current-sensor
www.infineon.com/hall-switches
www.infineon.com/angle-sensors
www.infineon.com/3dmagnetic
www.infineon.com/pressuresensor
www.infineon.com/24GHz
www.infineon.com/pressure
2GO evaluation kits
www.infineon.com/sensors2go
Online simulation tools
www.infineon.com/cms/en/product/sensor/#!simulation
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
382
Packages
For more details on the product,
click on the part number.
› Surface mount device (SMD) technology
› Through-hole device (THD) technology
Packages
383
For more details on the product,
click on the part number.
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
384
For more details on the product,
click on the part number.
Package overview
Packages
All products are RoHS Compliant.
DPAK (TO-252-2) DPAK (TO-252)
DPAK 5-pin (TO-252)
HDSOP-10-1 HDSOP-22-1 D2PAK (TO-263)
2 9.9 x 6.5 x 2.3 3 9.9 x 6.5 x 2.3 5 9.9 x 6.5 x 2.3 10 20.96 x 6.5 x 2.3 22 20.96 x 15.0 x 2.3 3 15.0 x 10.0 x 4.4
D2PAK (TO-263-2) TO263-7-11
TO263-7-12
TO263-7-13
D
2
PAK 7-pin (TO-263)
TO-Leadless (TOLL)
215.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 8 11.68 x 9.9 x 2.3
SC59 SOT-23 SOT-23-5 SOT-23-6 SOT-89 SOT-223
3 3.0 x 2.8 x 1.1 3 2.9 x 2.4 x 1.0 5 2.9 x 1.6 x 1.3 6 2.9 x 1.6 x 1.3 3 4.5 x 4.0 x 1.5 4 6.5 x 7.0 x 1.6
SOT223-3-1 SOT-323 SOT-363 TSOP6 PQFN 2x2 PQFN 2x2 dual
3 6.5 x 7.0 x 1.6 3 2.0 x 2.1 x 0.9 6 2.0 x 2.1 x 0.9 6 2.9 x 2.5 x 1.1 6 2.0 x 2.0 x 0.9 6 2.0 x 2.0 x 0.9
PQFN 3.3x3.3 SuperSO8 SuperSO8 dual SuperSO8 fused leads TDSON-8-47 TDSON-10-2
8 3.3 x 3.3 x 1.0 8 5.15 x 6.15 x 1.0 8 5.15 x 6.15 x 1.0 8 5.15 x 6.15 x 1.0 8 5.15 x 6.15 x 1.0 10 3.0 x 3.0 x 0.9
TDSON-10-7 TSDSON-8-25 fused leads TISON-8
TISON-8 (power stage 5x6)
TISON-8-4 (Power Block) TSON-8-1
10 3.0 x 3.0 x 0.9 8 3.3 x 3.3 x 1.0 8 7.0 x 7.0 x 1.0 8 5.0 x 6.0 x 1.0 8 5.0 x 6.0 x 1.0 8 3.0 x 3.0 x 1.0
TSON-8-3 ThinPAK 5x6 (TSON-8) TSON-10 TSNP-6-13 ThinPAK 8x8 (VSON-4) VDSON-8
8 5.0 x 6.0 x 1.0 8 5.0 x 5.0 x 1.0 10 3.3 x 3.3 x 1.0 6 1.5 x 1 x 0.375 4 8.0 x 8.0 x 1.0 8 4.0 x 4.0 x 0.9
WSON-6-1 WSON-8-3 WSON-10 DirectFET™ Small Can DirectFET™ Medium Can DirectFET™ Large Can
6 3 x 3 x 0.75 8 3 x 3 x 0.75 10 4.0 x 4.0 x 0.8 V 4.8 x 3.8 x 0.65 V 6.3 x 4.9 x 0.65 V 9.1 x 6.98 x 0.71
Package (JEITA-code)
X L x W x H
pin-count
V = Variable number of pins
All dimensions in mm
Surface mount device (SMD) technology
www.infineon.com/packages
385
For more details on the product,
click on the part number.
All products are RoHS Compliant.
IQFN-27-2 IQFN-30 (DrMOS 4x4) IQFN-31 (DrMOS 5x5) IQFN-36 IQFN-39 IQFN-40
27 3.3 x 6.0 x 0.9 30 4.0 x 4.0 x 1.0 31 5.0 x 5.0 x 0.8 36 7.5 x 6.0 x 0.9 39 5.0 x 6.0 x 0.9 40 6.0 x 6.0 x 0.8
SO-8/SO-8 dual SO-16/12 SO-14 SO-16 SO-18 DSO-12
8 5.0 x 6.0 x 1.75 12 10.0 x 6.0 x 1.75 14 8.75 x 6.0 x 1.75 16 10.0 x 6.0 x 1.75 18 12.8 x 10.3 x 2.65 12 10.3 x 7.8 x 2.6 (max)
DSO-16-30 (300 mil) DSO-24 SSOP-24 TDSO-16 SO-19 SO-20
16 10.3 x 7.5 x 2.35 24
10.5 x 15.6 x 2.65 (max)
24 6 x 8.65 x 1.75 (max) 16 5.0 x 6.0 x 1.2 19 12.8 x 10.3 x 2.65 20 12.8 x 10.3 x 2.65
DSO-28 SO-36 TSSOP-28 TSSOP-48 LFBGA-516-5 LFBGA-292-6
28 18.1 x 10.3 x 2.65 36 15.9 x 11.0 x 3.5 28 9.7 x 6.4 x 1.2 48 12.5 x 6.1 x 1.1 516 25.3 x 25.3 x 2.8 292 17.3 x 17.3 x 2.35
BGA-416-26 TFLGA-13-1 LQFP-176-22 LQFP-144-22 TQFP-144-27 TQFP-100-23
416 27.3 x 27.3 x 3.2 13 5 x 5 x 0.96 176 26.7 x 26.7 x 2.1 144 22.4 x 22.4 x 2.2 144 18.7 x 18.7 x 1.6 100 14.5 x 14.5 x 1.5
TQFP-80-7 VQFN-40-13 VQFN-48-60 VQFN-48-78 (LTI) VQFN-56-5/-6 Package (JEITA-code)
80 12.6 x 12.6 x 1.5 40 5 x 5 x 0.85 48 6 x 6 x 0.85 48 7 x 7 x 0.85 56 7 x 7 x 0.9 X L x W x H
pin-count
V = Variable number of pins
All dimensions in mm
Package overview
www.infineon.com/packages
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
386
For more details on the product,
click on the part number.
Package overview
www.infineon.com/packages
IPAK (TO251) IPAK SL (TO251 SL) I2PAK (TO262) TO220 real 2-pin TO220 2-pin TO220 3-pin
3 15.5 x 6.5 x 2.3 3 10.7 x 6.5 x 2.3 3 25.1 x 10 x 4.4 2 29.15 x 10.0 x 4.4 2 29.1 x 9.9 x 4.4 3 29.15 x 10.0 x 4.4
TO220 FullPAK
TO220 FullPAK Narrow Lead
TO220 FullPAK Wide Creepage
TO220-6-46 TO220-6-47 TO-247
3 29.6 x 10.5 x 4.7 3 29.6 x 10.5 x 4.7 3 28.85 x 11 x 4.7 6 21.7 x 9.9 x 4.4 6 26.1 x 9.9 x 4.4 3 40.15 x 15.9 x 5.0
TO-247-3-AI TO-247 4-pin DIP-7 DIP-8 DIP-14 DIP-20
3 41.3 x 10.9 x 5.18 4 40.15 x 15.9 x 5.0 7 9.52 x 8.9 x 4.37 8 9.52 x 8.9 x 4.37 14 19.5 x 8.9 x 4.37 20 24.6 x 9.9 x 4.2
Super220 Super247 SSO-3-9 SSO-3-10 SSO-4-1 TO92S-3-1
3 28.25 x 10.5 x 4.5 3 34.6 x 15.6 x 5 3 A: 3.71 x 5.34 x 1
B: 2.68 x 5.34 x 1.2 3 4.06 x 1.5 x 4.05 4 5.34 x 1.0 x 3.71 3 4.0 x 1.52 x 3.15
TO92S-3-2 Package (JEITA-code)
3 4.0 x 1.52 x 3.15 X L x W x H
pin-count
V = Variable number of pins
All dimensions in mm
Through-hole device (THD) technology
A
B
All products are RoHS Compliant.
387
For more details on the product,
click on the part number.
Infineon support for packages
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/packages
ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
388
For more details on the product,
click on the part number.
General support
www.infineon.com/support
www.infineon.com/wheretobuy
www.infineon.com/quality
www.infineon.com/packages
www.infineon.com/green
www.infineon.com/opn
Request reliability (FIT) data
http://infineon-community.com/FIT_1
Infineon powerful support
Useful links and helpful information
Tools, desks and more
www.infineon.com/solutionfinder
www.infineon.com/lightdesk
www.infineon.com/evaluationboards
www.infineon.com/webinars
Register for the Newsletter4Engineers
http://infineon-community.com/Newsletter4Engineers
389
For more details on the product,
click on the part number.
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ApplicationsPackages 20-300 V MOSFETs500-950 V MOSFETsWBG semiconductorsDiscrete IGBTsPower ICs
Intelligent switches
and input ICs
Gate driver ICsMicrocontrollersXENSIV™ sensors
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Infineon oers its toll-free 0800/4001 service hotline as one central number,
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Published by
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9500Villach, Austria
© 2020 Infineon Technologies AG.
All Rights Reserved.
Document number: B131-I0773-V1-7600-EU-EC-P
Date: 04 / 2020
Please note!
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ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
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