©2002 Fairchild Semiconductor Corporation RHRU15090, RHRU150100 Rev. B
RHRU15090, RHRU150100
150A, 900V - 1000V Hyperfast Diodes
RHRU15090 and RHRU150100 (TA49072) are hyperfast
diodes with soft recovery characteristics (t
RR
< 90ns). They
have half the recovery time of ultrafast diodes and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery<90ns
Operating Temperature+175
o
C
Reverse Voltage Up To1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
JEDEC STYLE TO-218
Symbol
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU15090 TO-218 RHRU15090
RHRU150100 TO-218 RHR150100
NOTE: When ordering, use the entire part number. ANODE
CATHODE
(FLANGE)
K
A
RHRU15090 RHRU150100 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
900 1000 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
900 1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
900 1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +42
o
C)
150 150 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
300 300 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
1500 1500 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
375 375 W
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
50 50 mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-65 to +175 -65 to +175
o
C
January 2002
©2002 Fairchild Semiconductor Corporation RHRU15090, RHRU150100 Rev. B
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION
LIMITS
UNITS
RHRU15090 RHRU150100
MIN TYP MAX MIN TYP MAX
V
F
I
F
= 150A, T
C
= +25
o
C - - 3.0 - - 3.0 V
V
F
I
F
= 150A, T
C
= +150
o
C - - 2.5 - - 2.5 V
I
R
V
R
= 900V, T
C
= +25
o
C - - 500 - - -
µ
A
V
R
= 1000V, T
C
= +25
o
C -----500
µ
A
I
R
V
R
= 900V, T
C
= +150
o
C - - 3.0 - - - mA
V
R
= 1000V, T
C
= +150
o
C -----3.0mA
t
RR
I
F
= 1A, dI
F
/dt = 100A/
µ
s - -90- -90ns
I
F
= 150A, dI
F
/dt = 100A/
µ
s - - 100 - - 100 ns
t
A
I
F
= 150A, dI
F
/dt = 100A/
µ
s - 65 - - 65 - ns
t
B
I
F
= 150A, dI
F
/dt = 100A/
µ
s - 30 - - 30 - ns
R
θ
JC
- - 0.4 - - 0.4
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
C1
LLOOP
DUT
Q3
R3
Q4
Q2
R1
R2
-V4
Q1
-V2
0
0
+V1
t1
t2
t3
R4
+V3
V1 AMPLITUDE CONTROLS I
F
V2 AMPLITUDE CONTROLS dI
F/dt
L1 = SELF INDUCTANCE OF R
4t1 5tA(MAX)
t2 > tRR
t3 > 0
L1
R4
tA(MIN)
10
+LLOOP
IF
tRR
tAtB
0
IRM
0.25 IRM
VR
VRM
dIF
dt
RHRU15090, RHRU150100
©2002 Fairchild Semiconductor Corporation RHRU15090, RHRU150100 Rev. B
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
VF, FORWARD VOLTAGE (V)
500
100
10
1
0 0.5 1.0 1.5 2.5 3.02.0 3.5
+175oC
+100oC
+25oC
IF, FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
3000
100
10
1.0
0 1000200 800600400
1000 +175oC
0.01
0.1
+100oC
+25oC
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
100101
0
100
20
80
40
120
60
150
tA
tB
tRR
t, RECOVERY TIMES (ns)
IF(AV), AVERAGE FORWARD CURRENT (A)
TC, CASE TEMPERATURE (oC)
120
0
25 50 75 100 150 175
125
40
80
160
DC
SQ. WAVE
12V
Q2
Q1
12V
130
DUT
CURRENT
SENSE
+
LR
1M
VDD
130
IMAX = 1A
L = 40mH
R < 0.1
EAVL = 1/2LI
2 [V
AVL/(V
AVL - V
DD)]
Q1 & Q
2 ARE 1000V MOSFETs
-
VDD
IV
t0t1t2
IL
VAVL
t
RHRU15090, RHRU150100
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™