RHRU15090, RHRU150100 January 2002 150A, 900V - 1000V Hyperfast Diodes Features RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. * Hyperfast with Soft Recovery<90ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Avalanche Energy Rated * Reverse Voltage Up To1000V * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits Ordering Information * General Purpose PACKAGING AVAILABILITY PART NUMBER * Operating Temperature+175oC PACKAGE BRAND RHRU15090 TO-218 RHRU15090 RHRU150100 TO-218 RHR150100 Package JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +42oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ (c)2002 Fairchild Semiconductor Corporation RHRU15090 RHRU150100 UNITS 900 900 900 150 1000 1000 1000 150 V V V A 300 300 A 1500 1500 A 375 50 -65 to +175 375 50 -65 to +175 W mj oC RHRU15090, RHRU150100 Rev. B RHRU15090, RHRU150100 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS RHRU15090 SYMBOL TEST CONDITION VF VF RHRU150100 MIN TYP MAX MIN TYP MAX UNITS IF = 150A, TC = +25oC - - 3.0 - - 3.0 V IF = 150A, TC = +150oC - - 2.5 - - 2.5 V = +25oC - - 500 - - - A = +25oC - - - - - 500 A = +150oC - - 3.0 - - - mA VR = 1000V, TC = +150oC - - - - - 3.0 mA IF = 1A, dIF/dt = 100A/s - - 90 - - 90 ns IF = 150A, dIF/dt = 100A/s - - 100 - - 100 ns tA IF = 150A, dIF/dt = 100A/s - 65 - - 65 - ns tB IF = 150A, dIF/dt = 100A/s - 30 - - 30 - ns 0.4 oC/W IR VR = 900V, TC VR = 1000V, TC IR VR = 900V, TC tRR RJC - - 0.4 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLSFI V2 AMPLITUDE CONTROLS dI F/dt R 1 L1 = SELF INDUCTANCE OF R 4 +LLOOP Q1 +V1 +V3 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 Q2 0 LLOOP t2 R2 t1 IF DUT dIF dt tRR tA tB 0 Q4 0.25 IRM t3 C1 0 IRM R4 Q3 -V2 R3 -V4 VR VRM FIGURE 1. tRR TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation FIGURE 2. tRR WAVEFORMS AND DEFINITIONS RHRU15090, RHRU150100 Rev. B RHRU15090, RHRU150100 Typical Performance Curves 3000 500 +175oC IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 1000 100 +175oC +100oC +25oC 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 100 +100oC 10 1.0 +25oC 0.1 0.01 3.5 0 200 FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 100 tRR 60 tA 40 tB 20 0 1 DC 80 SQ. WAVE 40 0 25 50 75 125 100 150 175 TC , CASE TEMPERATURE (oC) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT L FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES R + VDD 1M VAVL DUT 12V 1000 120 IF , FORWARD CURRENT (A) 130 800 160 100 150 10 IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 & Q2 ARE 1000V MOSFETs Q1 600 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 120 80 400 VR , REVERSE VOLTAGE (V) VF , FORWARD VOLTAGE (V) Q2 130 IL CURRENT SENSE I V VDD - 12V FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation t0 t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRU15090, RHRU150100 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4