Logic Controlled, High-Side Power Switch ADP190 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN + - ADP190 VOUT GND EN LEVEL SHIFTER LOAD 07874-001 Low RDSON of 105 m @ 1.8 V Low input voltage range: 1.2 V to 3.6 V 500 mA continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2 A (maximum) ground current Ultralow shutdown current: <1 A Ultrasmall 0.8 mm x 0.8 mm, 4-ball, 0.4 mm pitch WLCSP Figure 1. APPLICATIONS Mobile phones Digital cameras and audio devices Portable and battery-powered equipment GENERAL DESCRIPTION The ADP190 is a high-side load switch designed for operation from 1.2 V to 3.6 V. This load switch provides power domain isolation for extended power battery life. The device contains a low on-resistance P-channel MOSFET that supports more than 500 mA of continuous current and minimizes power loss. The low 2 A (maximum) of ground current and ultralow shutdown current make the ADP190 ideal for battery-operated portable equipment. The built-in level shifter for enable logic makes the ADP190 compatible with modern processors and GPIO controllers. Beyond operating performance, the ADP190 occupies minimal printed circuit board (PCB) space with an area less than 0.64 mm2 and a height of 0.60 mm. It is available in an ultrasmall 0.8 mm x 0.8 mm, 4-ball, 0.4 mm pitch WLCSP. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 (c)2009 Analog Devices, Inc. All rights reserved. ADP190 TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................6 Applications ....................................................................................... 1 Theory of Operation .........................................................................8 Typical Applications Circuit............................................................ 1 Applications Information .................................................................9 General Description ......................................................................... 1 Ground Current .............................................................................9 Revision History ............................................................................... 2 Enable Feature ...............................................................................9 Specifications..................................................................................... 3 Timing ............................................................................................9 Absolute Maximum Ratings............................................................ 4 Thermal Considerations............................................................ 10 Thermal Data ................................................................................ 4 PCB Layout Considerations ...................................................... 12 Thermal Resistance ...................................................................... 4 Outline Dimensions ....................................................................... 13 ESD Caution .................................................................................. 4 Ordering Guide .......................................................................... 13 Pin Configuration and Function Descriptions ............................. 5 REVISION HISTORY 1/09--Revision 0: Initial Version Rev. 0 | Page 2 of 16 ADP190 SPECIFICATIONS VEN = VIN, ILOAD = 200 mA, TA = 25C, unless otherwise noted. Table 1. Parameter INPUT VOLTAGE RANGE EN INPUT EN Input Threshold Symbol VIN Test Conditions TJ = -40C to +125C Min 1.2 VEN_TH Logic High Voltage Logic Low Voltage EN Input Pull-Down Resistance CURRENT Ground Current 1 Shutdown Current VIH VIL REN 1.1 V VIN 1.3 V, TJ = -40C to +85C 1.3 V < VIN < 1.8 V, TJ = -40C to +85C 1.8 V VIN 3.6 V, TJ = -40C to +85C 1.1 V VIN 3.6 V 1.1 V VIN 3.6 V VIN = 1.8 V 0.3 0.4 0.45 1.2 VIN to VOUT RESISTANCE RDSON VOUT TIME Turn-On Delay Time Turn-On Delay Time 1 IGND IOFF tON_DLY tON_DLY Typ VIN = 1.8 V ,VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V VIN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V VIN = 1.5 V, ILOAD = 200 mA, EN = 1.5 V VIN = 1.2 V, ILOAD = 200 mA, EN = 1 V 80 90 105 125 160 VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 F VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 F 5 1.5 2 TIMING DIAGRAM VEN TURN-OFF DELAY VOUT Figure 2. Timing Diagram Rev. 0 | Page 3 of 16 07874-003 10% TURN-OFF FALL V V V V V M 2 Ground current includes EN pull-down current. TURN-ON RISE 1.0 1.2 1.2 0.3 0.1 90% Unit V 4 VIN = 3.6 V, VOUT open, TJ = -40C to +85C VIN = 1.8 V, EN = GND VIN = 1.8 V, EN = GND, TJ = -40C to +85C TURN-ON DELAY Max 3.6 130 A A A m m m m m s s ADP190 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter VIN to GND Pins VOUT to GND Pins EN to GND Pins Continuous Drain Current TA = 25C TA = 85C Continuous Diode Current Storage Temperature Range Operating Junction Temperature Range Soldering Conditions Rating -0.3 V to +3.6 V -0.3 V to VIN -0.3 V to +3.6 V 1 A 500 mA -50 mA -65C to +150C -40C to +125C JEDEC J-STD-020 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL DATA Absolute maximum ratings apply individually only, not in combination. The ADP190 can be damaged when the junction temperature limits are exceeded. Monitoring ambient temperature does not guarantee that TJ is within the specified temperature limits. In applications with high power dissipation and poor PCB thermal resistance, the maximum ambient temperature may need to be derated. In applications with moderate power dissipation and low PCB thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature is within specification limits. The junction temperature (TJ) of the device is dependent on the ambient temperature (TA), the power dissipation of the device (PD), and the junction-to-ambient thermal resistance of the package (JA). Maximum junction temperature (TJ) is calculated from the ambient temperature (TA) and power dissipation (PD) using the formula Junction-to-ambient thermal resistance (JA) of the package is based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to thermal board design is required. The value of JA may vary, depending on PCB material, layout, and environmental conditions. The specified values of JA are based on a 4-layer, 4 inch x 3 inch PCB. Refer to JESD51-7 and JESD51-9 for detailed information regarding board construction. For additional information, see the AN-617 application note, MicroCSPTM Wafer Level Chip Scale Package. JB is the junction-to-board thermal characterization parameter with units of C/W. JB of the package is based on modeling and calculation using a 4-layer board. The JESD51-12 document, Guidelines for Reporting and Using Electronic Package Thermal Information, states that thermal characterization parameters are not the same as thermal resistances. JB measures the component power flowing through multiple thermal paths rather than through a single path, as in thermal resistance (JB). Therefore, JB thermal paths include convection from the top of the package as well as radiation from the package, factors that make JB more useful in real-world applications. Maximum junction temperature (TJ) is calculated from the board temperature (TB) and the power dissipation (PD) using the formula TJ = TB + (PD x JB) Refer to JESD51-8, JESD51-9, and JESD51-12 for more detailed information about JB. THERMAL RESISTANCE JA and JB are specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 3. Thermal Resistance Package Type 4-Ball, 0.4 mm Pitch WLCSP ESD CAUTION TJ = TA + (PD x JA) Rev. 0 | Page 4 of 16 JA 260 JB 58.4 Unit C/W ADP190 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS A 1 2 VIN VOUT B EN GND 07874-002 TOP VIEW (Not to Scale) Figure 3. Pin Configuration Table 4. Pin Function Descriptions Pin No. A1 B1 A2 B2 Mnemonic VIN EN VOUT GND Description Input Voltage. Enable Input. Drive EN high to turn on the switch; drive EN low to turn off the switch. Output Voltage. Ground. Rev. 0 | Page 5 of 16 ADP190 TYPICAL PERFORMANCE CHARACTERISTICS VIN = 1.8 V, EN = VIN > VIH, ILOAD = 100 mA, TA = 25C, unless otherwise noted. 200 VOUT = 3.6V ILOAD = 200mA CLOAD = 1F VEN = 1.5V T VIN = 1.2V 180 VEN 140 VIN = 1.8V 120 1 100 -40 -5 25 85 JUNCTION TEMPERATURE, TJ (C) 07874-004 VIN = 3.6V 80 60 VOUT 2 125 CH1 500mV CH2 2V 990mV VOUT = 1.8V ILOAD = 200mA CLOAD = 1F VEN = 1.5V T ILOAD = 10mA ILOAD = 100mA ILOAD = 250mA ILOAD = 350mA ILOAD = 500mA 180 A CH1 Figure 7. Turn-On Delay vs. Input Voltage = 3.6 V Figure 4. RDSON vs. Temperature (Includes ~15 m Trace Resistance) 200 M1.00s T 3.0s 07874-007 RDS ON (m) 160 VEN RDS ON (m) 160 140 VOUT 1 120 2 1.6 2.0 2.4 VIN (V) 2.8 3.2 3.6 CH1 500mV CH2 1V 07874-005 80 1.2 1.2 GROUND CURRENT (A) 60 40 20 ILOAD = 10mA ILOAD = 100mA ILOAD = 250mA ILOAD = 350mA ILOAD = 500mA 1.1 1.0 0.9 0.8 0 50 100 150 200 LOAD (mA) 250 300 350 07874-006 0 -20 990mV Figure 6. Voltage Drop vs. Load Current (Includes ~15 m Trace Resistance) Rev. 0 | Page 6 of 16 0.7 -40 -5 25 85 JUNCTION TEMPERATURE, TJ (C) Figure 9. Ground Current vs. Temperature 125 07874-009 DIFFERENCE (mV) 1.3 VIN = 1.2V VIN = 1.8V VIN = 2.5V VIN = 3.6V 80 A CH1 Figure 8. Turn-On Delay vs. Input Voltage = 1.8 V Figure 5. RDSON vs. Input Voltage, VIN (Includes ~15 m Trace Resistance) 100 M4s T 12s 07874-008 100 ADP190 0.6 1.4 1.2 1.0 VIN = 1.8V VIN = 2.5V VIN = 3.6V 0.4 0.3 0.2 0.1 0.8 0.6 1.2 0.5 VIN = 1.2V 1.7 2.2 2.7 3.2 VIN (V) 3.6 Figure 10. Ground Current vs. Input Voltage, VIN 0 -50 -25 0 25 50 75 100 JUNCTION TEMPERATURE, TJ (C) Figure 11. Shutdown Current vs. Temperature Rev. 0 | Page 7 of 16 125 07874-011 1.6 0.7 = 10mA = 100mA = 250mA = 350mA = 500mA 07874-010 GROUND CURRENT (A) 1.8 ILOAD ILOAD ILOAD ILOAD ILOAD SHUTDOWN CURRENT (A) 2.0 ADP190 THEORY OF OPERATION VIN - ADP190 VOUT GND EN LEVEL SHIFTER Figure 12. Functional Block Diagram Rev. 0 | Page 8 of 16 LOAD 07874-030 + The ADP190 is a high-side PMOS load switch. It is designed for supply operation from 1.2 V to 3.6 V. The PMOS load switch is designed for low on resistance, 105 m at VIN = 1.8 V, and supports 500 mA of continuous current. It is a low ground current device with a nominal 4 M pull-down resistor on its enable pin. The package is a space-saving 0.8 mm x 0.8 mm, 4-ball WLCSP. ADP190 APPLICATIONS INFORMATION 2.0 GROUND CURRENT 1.8 The major source for ground current in the ADP190 is the 4 M pull-down on the enable (EN) pin. Figure 13 shows typical ground current when VEN = VIN and VIN varies from 1.2 V to 3.6 V. 1.6 VOUT (V) 1.4 2.0 VIN = 3.6V 0.8 0.4 1.6 0 VIN = 2.5V 0 0.1 0.2 0.3 0.4 0.5 1.2 0.8 0.9 1.0 1.1 1.2 Figure 15. Typical EN Operation 1.0 As shown in Figure 15, the EN pin has built-in hysteresis. This prevents on/off oscillations that can occur due to noise on the EN pin as it passes through the threshold points. VIN = 1.8V 0 50 100 150 200 LOAD (mA) 250 300 350 07874-013 VIN = 1.2V 0.6 0.6 0.7 VEN (V) 07874-015 0.2 1.4 0.8 Figure 13. Ground Current vs. Load Current As shown in Figure 14, an increase in ground current can occur when VEN VIN. This is caused by the CMOS logic nature of the level shift circuitry as it translates an EN signal 1.2 V to a logic high. This increase is a function of the VIN - VEN delta. 14 12 10 VOUT = 3.6V IGND (A) 1.0 0.6 8 6 The EN pin active/inactive thresholds derive from the VIN voltage; therefore, these thresholds vary with changing input voltage. Figure 16 shows typical EN active/inactive thresholds when the input voltage varies from 1.2 V to 3.6 V. 1.15 TYPICAL EN THRESHOLDS (V) GROUND CURRENT (A) 1.8 1.2 1.05 0.95 EN ACTIVE 0.85 0.75 0.65 EN INACTIVE 0.55 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 VEN (V) 3.60 07874-016 3.45 3.30 3.15 3.00 2.85 2.70 2.55 2.25 2.40 2.10 1.95 1.80 1.65 1.50 1.20 VIN (V) VOUT = 1.8V Figure 16. Typical EN Pin Thresholds vs. Input Voltage, VIN 07874-014 2 0.35 1.35 0.45 4 TIMING Figure 14. Typical Ground Current when VEN VIN ENABLE FEATURE The ADP190 uses the EN pin to enable and disable the VOUT pin under normal operating conditions. As shown in Figure 15, when a rising voltage on EN crosses the active threshold, VOUT turns on. When a falling voltage on EN crosses the inactive threshold, VOUT turns off. Turn-on delay is defined as the delta between the time that EN reaches >1.2 V until VOUT rises to ~10% of its final value. The ADP190 includes circuitry to set the typical 1.5 s turn-on delay at 3.6 V VIN to limit the VIN inrush current. As shown in Figure 17, the turn-on delay is dependent on the input voltage. Rev. 0 | Page 9 of 16 ADP190 The turn-off time is defined as the delta between the time from 90% to 10% of VOUT reaching its final value. It is also dependent on the RC time constant. ILOAD = 100mA CLOAD = 1F VEN = 3.6V T VEN VOUT = 1.8V VEN = 3.6V T VOUT = 2.5V VOUT = 1.8V ILOAD = 200mA, CLOAD = 1F VOUT = 1.2V ILOAD = 100mA, CLOAD = 4.7F 1 2 CH2 1V M4s T 15.96s A CH1 2.34V 1 2 Figure 17. Typical Turn-On Delay Time with Varying Input Voltage VEN The rise time is defined as the delta between the time from 10% to 90% of VOUT reaching its final value. It is dependent on the RC time constant where C = load capacitance (CLOAD) and R = RDSON||RLOAD. Because RDSON is usually smaller than RLOAD, an adequate approximation for RC is RDSON x CLOAD. The ADP190 does not need any input or load capacitor, but capacitors can be used to suppress the noise issues on the board. If significant load capacitance is connected, inrush current is a concern. T VEN CH2 500mV M10s T 30.36s A CH1 1V Figure 20. Typical Turn-Off Time THERMAL CONSIDERATIONS In most applications, the ADP190 does not dissipate much heat due to its low on-channel resistance. However, in applications with high ambient temperature and load current, the heat dissipated in the package can be large enough to cause the junction temperature of the die to exceed the maximum junction temperature of 125C. The junction temperature of the die is the sum of the ambient temperature of the environment and the temperature rise of the package due to the power dissipation, as shown in Equation 1. VOUT 1 CH1 1V 07874-020 CH1 1V 07874-017 ILOAD = 100mA, CLOAD = 1F 2 IIN CH2 2V CH1 2V CH3 2.00mA M10s T 40.16s A CH1 2.32V 07874-029 VOUT = 1.8V ILOAD = 200mA CLOAD = 1F VEN = 3.6V 3 Figure 18. Typical Rise Time and Inrush Current with CLOAD = 1 F T VEN 1 VOUT To guarantee reliable operation, the junction temperature of the ADP190 must not exceed 125C. To ensure that the junction temperature stays below this maximum value, the user needs to be aware of the parameters that contribute to junction temperature changes. These parameters include ambient temperature, power dissipation in the power device, and thermal resistances between the junction and ambient air (JA). The JA value is dependent on the package assembly compounds that are used and the amount of copper used to solder the package GND pin to the PCB. Table 5 shows typical JA values of the 4-ball WLCSP for various PCB copper sizes. Table 6 shows the typical JB value of the 4-ball WLCSP. 2 Table 5. Typical JA Values for WLCSP 3 Copper Size (mm2) 01 50 100 300 500 IIN VOUT = 1.8V ILOAD = 200mA CLOAD = 4.7F VEN= 3.6V M10s T 39.8s A CH1 1.00V 07874-019 CH2 2V CH1 2V CH3 2.00mA 1 Figure 19. Typical Rise Time and Inrush Current with CLOAD = 4.7 F JA (C/W) 260 159 157 153 151 Device soldered to minimum size pin traces. Table 6. Typical JB Values Package 4-Ball WLCSP Rev. 0 | Page 10 of 16 JB 58.4 Unit C/W ADP190 where: TA is the ambient temperature. PD is the power dissipation in the die, given by PD = [(VIN - VOUT) x ILOAD] + (VIN x IGND) (2) where: ILOAD is the load current. IGND is the ground current. VIN and VOUT are the input and output voltages, respectively. 40 20 LOAD CURRENT = 100mA LOAD CURRENT = 150mA 1.0 1.5 2.0 2.5 3.0 VIN - VOUT (V) 3.5 4.0 4.5 4.5 4.5 JUNCTION TEMPERATURE, TJ (C) MAX JUNCTION TEMPERATURE LOAD CURRENT = 1mA LOAD CURRENT = 10mA 120 100 80 60 40 20 0 0.5 80 LOAD CURRENT = 25mA LOAD CURRENT = 50mA LOAD CURRENT = 75mA 1.0 1.5 LOAD CURRENT = 100mA LOAD CURRENT = 150mA 2.0 2.5 3.0 VIN - VOUT (V) 3.5 4.0 Figure 23. WLCSP, 0 mm2 of PCB Copper, TA = 25C 140 60 40 20 LOAD CURRENT = 100mA LOAD CURRENT = 150mA 0 0.5 1.0 1.5 2.0 2.5 3.0 VIN - VOUT (V) 3.5 4.0 Figure 21. WLCSP, 500 mm2 of PCB Copper, TA = 25C 4.5 JUNCTION TEMPERATURE, TJ (C) MAX JUNCTION TEMPERATURE 07874-021 JUNCTION TEMPERATURE, TJ (C) LOAD CURRENT = 1mA LOAD CURRENT = 10mA LOAD CURRENT = 25mA LOAD CURRENT = 50mA LOAD CURRENT = 75mA 100 60 140 (3) MAX JUNCTION TEMPERATURE 120 80 Figure 22. WLCSP, 100 mm2 of PCB Copper, TA = 25C As shown in Equation 3, for a given ambient temperature, inputto-output voltage differential, and continuous load current, there exists a minimum copper size requirement for the PCB to ensure that the junction temperature does not rise above 125C. Figure 21 to Figure 26 show junction temperature calculations for different ambient temperatures, load currents, VIN to VOUT differentials, and areas of PCB copper. 140 100 0 0.5 Power dissipation due to ground current is quite small and can be ignored. Therefore, the junction temperature equation simplifies to the following: TJ = TA + {[(VIN - VOUT) x ILOAD] x JA} LOAD CURRENT = 1mA LOAD CURRENT = 10mA LOAD CURRENT = 25mA LOAD CURRENT = 50mA LOAD CURRENT = 75mA 07874-022 (1) MAX JUNCTION TEMPERATURE 120 07874-023 TJ = TA + (PD x JA) JUNCTION TEMPERATURE, TJ (C) 140 07874-024 The junction temperature of the ADP190 can be calculated from the following equation: 120 100 80 60 40 LOAD CURRENT LOAD CURRENT LOAD CURRENT LOAD CURRENT 20 0 0.5 1.0 1.5 = 1mA = 10mA = 25mA = 50mA LOAD CURRENT = 75mA LOAD CURRENT = 100mA LOAD CURRENT = 150mA 2.0 2.5 3.0 VIN - VOUT (V) 3.5 4.0 Figure 24. WLCSP, 500 mm2 of PCB Copper, TA = 50C Rev. 0 | Page 11 of 16 ADP190 140 140 100 80 60 40 LOAD CURRENT LOAD CURRENT LOAD CURRENT LOAD CURRENT 20 0 0.5 1.0 1.5 = 1mA = 10mA = 25mA = 50mA LOAD CURRENT = 75mA LOAD CURRENT = 100mA LOAD CURRENT = 150mA 2.0 2.5 3.0 VIN - VOUT (V) 3.5 4.0 4.5 80 60 40 20 LOAD CURRENT = 1mA LOAD CURRENT = 10mA LOAD CURRENT = 25mA LOAD CURRENT = 50mA LOAD CURRENT = 75mA LOAD CURRENT = 100mA LOAD CURRENT = 150mA MAX JUNCTION TEMPERATURE 1.0 1.5 2.0 2.5 3.0 VIN - VOUT (V) 3.5 4.0 4.5 Figure 27. WLCSP, TB = 85C PCB LAYOUT CONSIDERATIONS MAX JUNCTION TEMPERATURE Improve heat dissipation from the package by increasing the amount of copper attached to the pins of the ADP190. However, as listed in Table 5, a point of diminishing returns is eventually reached, beyond which an increase in the copper size does not yield significant heat dissipation benefits. 120 100 80 It is critical to keep the input and output traces as wide and as short as possible to minimize the circuit board trace resistance. 60 40 20 0 0.5 LOAD CURRENT LOAD CURRENT LOAD CURRENT LOAD CURRENT 1.0 1.5 = 1mA = 10mA = 25mA = 50mA LOAD CURRENT = 75mA LOAD CURRENT = 100mA LOAD CURRENT = 150mA 2.0 2.5 3.0 VIN - VOUT (V) 3.5 4.0 4.5 07874-026 JUNCTION TEMPERATURE, TJ (C) 100 0 0.5 Figure 25. WLCSP, 100 mm2 of PCB Copper, TA = 50C 140 120 07874-027 JUNCTION TEMPERATURE, TJ (C) 120 07874-025 JUNCTION TEMPERATURE, TJ (C) MAX JUNCTION TEMPERATURE Figure 26. WLCSP, 0 mm2 of PCB Copper, TA = 50C TJ = TB + (PD x JB) 07874-028 In cases where the board temperature is known, use the thermal characterization parameter, JB, to estimate the junction temperature rise. Maximum junction temperature (TJ) is calculated from the board temperature (TB) and power dissipation (PD) using the formula (4) Figure 28. WLCSP PCB Layout Rev. 0 | Page 12 of 16 ADP190 OUTLINE DIMENSIONS 0.660 0.600 0.540 0.430 0.400 0.370 SEATING PLANE 2 1 A 0.280 0.260 0.240 BALL A1 IDENTIFIER B 0.40 BALL PITCH TOP VIEW (BALL SIDE DOWN) 0.230 0.200 0.170 BOTTOM VIEW (BALL SIDE UP) 0.050 NOM COPLANARITY 011409-A 0.800 0.760 SQ 0.720 Figure 29. 4-Ball Wafer Level Chip Scale Package [WLCSP] (CB-4-3) Dimensions shown in millimeters ORDERING GUIDE Model ADP190ACBZ-R7 1 ADP190CB-EVALZ1 1 Temperature Range -40C to +85C Package Description 4-Ball Wafer Level Chip Scale Package [WLCSP] Evaluation Board Z = RoHS Compliant Part. Rev. 0 | Page 13 of 16 Package Option CB-4-3 Branding L9C ADP190 NOTES Rev. 0 | Page 14 of 16 ADP190 NOTES Rev. 0 | Page 15 of 16 ADP190 NOTES (c)2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D07874-0-1/09(0) Rev. 0 | Page 16 of 16