Logic Controlled, High-Side Power Switch
ADP190
Rev. 0
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FEATURES
Low RDSON of 105 mΩ @ 1.8 V
Low input voltage range: 1.2 V to 3.6 V
500 mA continuous operating current
Built-in level shift for control logic that can be operated by
1.2 V logic
Low 2 μA (maximum) ground current
Ultralow shutdown current: <1 μA
Ultrasmall 0.8 mm × 0.8 mm, 4-ball, 0.4 mm pitch WLCSP
APPLICATIONS
Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment
TYPICAL APPLICATIONS CIRCUIT
GND
EN
–
+
LEVEL
SHIFTER
LOAD
VIN VOUT
ADP190
07874-001
Figure 1.
GENERAL DESCRIPTION
The ADP190 is a high-side load switch designed for operation
from 1.2 V to 3.6 V. This load switch provides power domain
isolation for extended power battery life. The device contains a
low on-resistance P-channel MOSFET that supports more than
500 mA of continuous current and minimizes power loss. The
low 2 μA (maximum) of ground current and ultralow shutdown
current make the ADP190 ideal for battery-operated portable
equipment. The built-in level shifter for enable logic makes the
ADP190 compatible with modern processors and GPIO
controllers.
Beyond operating performance, the ADP190 occupies minimal
printed circuit board (PCB) space with an area less than 0.64 mm2
and a height of 0.60 mm. It is available in an ultrasmall 0.8 mm ×
0.8 mm, 4-ball, 0.4 mm pitch WLCSP.
ADP190
Rev. 0 | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Typical Applications Circuit ............................................................ 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Data ................................................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ..............................................6
Theory of Operation .........................................................................8
Applications Information .................................................................9
Ground Current .............................................................................9
Enable Feature ...............................................................................9
Timing ............................................................................................9
Thermal Considerations ............................................................ 10
PCB Layout Considerations ...................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
1/09—Revision 0: Initial Version
ADP190
Rev. 0 | Page 3 of 16
SPECIFICATIONS
VEN = VIN, ILOAD = 200 mA, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions Min Typ Max Unit
INPUT VOLTAGE RANGE VIN T
J = −40°C to +125°C 1.2 3.6 V
EN INPUT
EN Input Threshold VEN_TH 1.1 V ≤ VIN ≤ 1.3 V, TJ = −40°C to +85°C 0.3 1.0 V
1.3 V < VIN < 1.8 V, TJ = −40°C to +85°C 0.4 1.2 V
1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C 0.45 1.2 V
Logic High Voltage VIH 1.1 V ≤ VIN ≤ 3.6 V 1.2 V
Logic Low Voltage VIL 1.1 V ≤ VIN ≤ 3.6 V 0.3 V
EN Input Pull-Down Resistance REN V
IN = 1.8 V 4 MΩ
CURRENT
Ground Current1
IGND V
IN = 3.6 V, VOUT open, TJ = −40°C to +85°C 2 µA
Shutdown Current IOFF V
IN = 1.8 V, EN = GND 0.1 µA
V
IN = 1.8 V, EN = GND, TJ = −40°C to +85°C 2 µA
VIN to VOUT RESISTANCE RDSON
V
IN = 1.8 V ,VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V 80 mΩ
V
IN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V 90 mΩ
V
IN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V 105 130 mΩ
V
IN = 1.5 V, ILOAD = 200 mA, EN = 1.5 V 125 mΩ
V
IN = 1.2 V, ILOAD = 200 mA, EN = 1 V 160 mΩ
VOUT TIME
Turn-On Delay Time tON_DLY V
IN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 F 5 s
Turn-On Delay Time tON_DLY V
IN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 F 1.5 s
1 Ground current includes EN pull-down current.
TIMING DIAGRAM
V
EN
V
OUT
TURN-ON
RISE
90%
10%
TURN-OFF
DELAY
TURN-OFF
FALL
TURN-ON
DELAY
07874-003
Figure 2. Timing Diagram
ADP190
Rev. 0 | Page 4 of 16
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VIN to GND Pins −0.3 V to +3.6 V
VOUT to GND Pins −0.3 V to VIN
EN to GND Pins −0.3 V to +3.6 V
Continuous Drain Current
TA = 25°C ±1 A
TA = 85°C ±500 mA
Continuous Diode Current −50 mA
Storage Temperature Range −65°C to +150°C
Operating Junction Temperature Range −40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP190 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that TJ is within the specified temperature
limits. In applications with high power dissipation and poor
PCB thermal resistance, the maximum ambient temperature
may need to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (TJ) of
the device is dependent on the ambient temperature (TA), the
power dissipation of the device (PD), and the junction-to-ambient
thermal resistance of the package (θJA).
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
TJ = TA + (PD × θJA)
Junction-to-ambient thermal resistance (θJA) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending on
PCB material, layout, and environmental conditions. The speci-
fied values of θJA are based on a 4-layer, 4 inch × 3 inch PCB.
Refer to JESD51-7 and JESD51-9 for detailed information
regarding board construction. For additional information, see
the AN-617 application note, MicroCSPTM Wafe r Level Chip
Scale Package.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. ΨJB of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12 document,
Guidelines for Reporting and Using Electronic Package Thermal
Information, states that thermal characterization parameters are
not the same as thermal resistances. ΨJB measures the component
power flowing through multiple thermal paths rather than through
a single path, as in thermal resistance (θJB). Therefore, ΨJB thermal
paths include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum junction temperature (TJ)
is calculated from the board temperature (TB) and the power
dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
Refer to JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA Ψ
JB Unit
4-Ball, 0.4 mm Pitch WLCSP 260 58.4 °C/W
ESD CAUTION
ADP190
Rev. 0 | Page 5 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VIN VOUT
12
EN
A
BGND
TOP VIEW
(Not to Scale)
07874-002
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
A1 VIN Input Voltage.
B1 EN Enable Input. Drive EN high to turn on the switch; drive EN low to turn off the switch.
A2 VOUT Output Voltage.
B2 GND Ground.
ADP190
Rev. 0 | Page 6 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 1.8 V, EN = VIN > VIH, ILOAD = 100 mA, TA = 25°C, unless otherwise noted.
200
180
160
140
120
100
80
60
1258525–5–40
JUNCTION TEMPERATURE, T
J
(°C)
RDS
ON
(mΩ)
V
IN
= 1.2V
V
IN
= 1.8V
07874-004
V
IN
= 3.6V
Figure 4. RDSON vs. Temperature (Includes ~15 mΩ Trace Resistance)
200
180
160
140
120
100
80
1.2 2.01.6 2.4 2.8 3.2 3.6
V
IN
(V)
RDS
ON
(mΩ)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 250mA
I
LOAD
= 350mA
I
LOAD
= 500mA
07874-005
Figure 5. RDSON vs. Input Voltage, VIN (Includes ~15 mΩ Trace Resistance)
100
80
60
40
20
0
–20
0 10050 150 200 250 300 350
LOAD (mA)
DIFFERENCE (mV)
V
IN
= 1.2V
V
IN
= 2.5V
V
IN
= 3.6V
V
IN
= 1.8V
07874-006
Figure 6. Voltage Drop vs. Load Current (Includes ~15 mΩ Trace Resistance)
CH1 500mV CH2 2V M1.00µs A CH1 990mV
T 3.0µs
1
2
T
V
EN
V
OUT
V
OUT
= 3.6V
I
LOAD
= 200mA
C
LOAD
= 1µF
V
EN
= 1.5V
07874-007
Figure 7. Turn-On Delay vs. Input Voltage = 3.6 V
2
CH1 500mV CH2 1V M4µs A CH1 990mV
T 12µs
1
T
V
OUT
= 1.8V
I
LOAD
= 200mA
C
LOAD
= 1µF
V
EN
= 1.5V
07874-008
V
EN
V
OUT
Figure 8. Turn-On Delay vs. Input Voltage = 1.8 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1258525–5–40
JUNCTION TEMPERATURE, T
J
(°C)
GROUND CURRENT (µA)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 250mA
I
LOAD
= 350mA
I
LOAD
= 500mA
07874-009
Figure 9. Ground Current vs. Temperature
ADP190
Rev. 0 | Page 7 of 16
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
3.2 3.61.2 1.7 2.2 2.7
V
IN
(V)
GROUND CURRENT (µA)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 250mA
I
LOAD
= 350mA
I
LOAD
= 500mA
07874-010
Figure 10. Ground Current vs. Input Voltage, VIN
0.7
0.6
0.5
0.4
0.3
0.2
0
0.1
1251007550250–25–50
JUNCTION TEMPERATURE, T
J
(°C)
SHUTDOWN CURRENT (µA)
V
IN
= 1.2V
V
IN
= 1.8V
V
IN
= 2.5V
V
IN
= 3.6V
07874-011
Figure 11. Shutdown Current vs. Temperature
ADP190
Rev. 0 | Page 8 of 16
THEORY OF OPERATION
The ADP190 is a high-side PMOS load switch. It is designed for
supply operation from 1.2 V to 3.6 V. The PMOS load switch is
designed for low on resistance, 105 mΩ at VIN = 1.8 V, and
supports 500 mA of continuous current. It is a low ground
current device with a nominal 4 MΩ pull-down resistor on its
enable pin. The package is a space-saving 0.8 mm × 0.8 mm,
4-ball WLCSP.
GND
EN
–
+
LEVEL
SHIFTER
LOAD
VIN VOUT
ADP190
07874-030
Figure 12. Functional Block Diagram
ADP190
Rev. 0 | Page 9 of 16
APPLICATIONS INFORMATION
GROUND CURRENT
The major source for ground current in the ADP190 is the 4 MΩ
pull-down on the enable (EN) pin. Figure 13 shows typical ground
current when VEN = VIN and VIN varies from 1.2 V to 3.6 V.
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
350300250200150100500
LOAD (mA)
GROUND CURRENT (µA)
07874-013
V
IN
= 1.2V
V
IN
= 1.8V
V
IN
= 2.5V
V
IN
= 3.6V
Figure 13. Ground Current vs. Load Current
As shown in Figure 14, an increase in ground current can occur
when VEN ≠ VIN. This is caused by the CMOS logic nature of the
level shift circuitry as it translates an EN signal ≥ 1.2 V to
a logic high. This increase is a function of the VIN − VEN delta.
14
12
10
8
6
4
2
0
3.50.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 3.33.12.9
V
EN
(V)
I
GND
(µA)
07874-014
V
OUT
= 1.8V
V
OUT
= 3.6V
Figure 14. Typical Ground Current when VEN ≠ VIN
ENABLE FEATURE
The ADP190 uses the EN pin to enable and disable the VOUT
pin under normal operating conditions. As shown in Figure 15,
when a rising voltage on EN crosses the active threshold, VOUT
turns on. When a falling voltage on EN crosses the inactive
threshold, VOUT turns off.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.20 0.4 0.5 0.6 0.70.1 0.2 0.3 0.8 0.9 1.0 1.1
V
EN
(V)
V
OUT
(V)
07874-015
Figure 15. Typical EN Operation
As shown in Figure 15, the EN pin has built-in hysteresis. This
prevents on/off oscillations that can occur due to noise on the
EN pin as it passes through the threshold points.
The EN pin active/inactive thresholds derive from the VIN
voltage; therefore, these thresholds vary with changing input
voltage. Figure 16 shows typical EN active/inactive thresholds
when the input voltage varies from 1.2 V to 3.6 V.
1.15
1.05
0.95
0.85
0.75
0.65
0.55
0.45
0.35
3.60
1.20
1.35
1.50
1.65
1.80
1.95
2.10
2.25
2.40
2.55
2.70
2.85
3.00
3.15
3.30
3.45
V
IN
(V)
TYPICAL EN THRESHOLDS (V)
EN ACTIVE
EN INACTIVE
07874-016
Figure 16. Typical EN Pin Thresholds vs. Input Voltage, VIN
TIMING
Turn-on delay is defined as the delta between the time that EN
reaches >1.2 V until VOUT rises to ~10% of its final value. The
ADP190 includes circuitry to set the typical 1.5 μs turn-on delay
at 3.6 V VIN to limit the VIN inrush current. As shown in Figure 17,
the turn-on delay is dependent on the input voltage.
ADP190
Rev. 0 | Page 10 of 16
2
CH1 1V CH2 1V M4µs A CH1 2.34V
T 15.96µs
1
T
I
LOAD
= 100mA
C
LOAD
= 1µF
V
EN
= 3.6V
V
OUT
= 1.2V
V
OUT
= 1.8V
V
OUT
= 2.5V
V
EN
07874-017
Figure 17. Typical Turn-On Delay Time with Varying Input Voltage
The rise time is defined as the delta between the time from 10%
to 90% of VOUT reaching its final value. It is dependent on the
RC time constant where C = load capacitance (CLOAD) and R =
RDSON||RLOAD. Because RDSON is usually smaller than RLOAD, an
adequate approximation for RC is RDSON × CLOAD. The ADP190
does not need any input or load capacitor, but capacitors can be
used to suppress the noise issues on the board. If significant
load capacitance is connected, inrush current is a concern.
2
3
CH1 2V
CH3 2.00mA Ω
CH2 2V M10µs A CH1 2.32V
T 40.16µs
1
T
V
OUT
= 1.8V
I
LOAD
= 200mA
C
LOAD
= 1µF
V
EN
= 3.6V
V
EN
V
OUT
I
IN
07874-029
Figure 18. Typical Rise Time and Inrush Current with CLOAD = 1 F
2
3
CH1 2V
CH3 2.00mA Ω
CH2 2V M10µs A CH1 1.00V
T 39.8µs
1
V
OUT
= 1.8V
I
LOAD
= 200mA
C
LOAD
= 4.7µF
V
EN
= 3.6V
V
EN
V
OUT
I
IN
T
07874-019
Figure 19. Typical Rise Time and Inrush Current with CLOAD = 4.7 µF
The turn-off time is defined as the delta between the time from
90% to 10% of VOUT reaching its final value. It is also
dependent on the RC time constant.
2
CH1 1V CH2 500mV M10µs A CH1 1V
T 30.36µs
1
T
V
OUT
= 1.8V
V
EN
= 3.6V
I
LOAD
= 200mA,
C
LOAD
= 1µF
I
LOAD
= 100mA,
C
LOAD
= 1µF
I
LOAD
= 100mA,
C
LOAD
= 4.7µF
V
EN
07874-020
Figure 20. Typical Turn-Off Time
THERMAL CONSIDERATIONS
In most applications, the ADP190 does not dissipate much heat
due to its low on-channel resistance. However, in applications
with high ambient temperature and load current, the heat
dissipated in the package can be large enough to cause the
junction temperature of the die to exceed the maximum junction
temperature of 125°C.
The junction temperature of the die is the sum of the ambient
temperature of the environment and the temperature rise of the
package due to the power dissipation, as shown in Equation 1.
To guarantee reliable operation, the junction temperature of
the ADP190 must not exceed 125°C. To ensure that the junction
temperature stays below this maximum value, the user needs to
be aware of the parameters that contribute to junction temperature
changes. These parameters include ambient temperature, power
dissipation in the power device, and thermal resistances between
the junction and ambient air (θJA). The θJA value is dependent
on the package assembly compounds that are used and the
amount of copper used to solder the package GND pin to the
PCB. Table 5 shows typical θJA values of the 4-ball WLCSP for
various PCB copper sizes. Table 6 shows the typical ΨJB value of
the 4-ball WLCSP.
Table 5. Typical θJA Values for WLCSP
Copper Size (mm2) θJA (°C/W)
01 260
50 159
100 157
300 153
500 151
1 Device soldered to minimum size pin traces.
Table 6. Typical ΨJB Values
Package ΨJB Unit
4-Ball WLCSP 58.4 °C/W
ADP190
Rev. 0 | Page 11 of 16
The junction temperature of the ADP190 can be calculated
from the following equation:
TJ = TA + (PD × θJA) (1)
where:
TA is the ambient temperature.
PD is the power dissipation in the die, given by
PD = [(VIN − VOUT) × ILOAD] + (VIN × IGND) (2)
where:
ILOAD is the load current.
IGND is the ground current.
VIN and VOUT are the input and output voltages, respectively.
Power dissipation due to ground current is quite small and
can be ignored. Therefore, the junction temperature equation
simplifies to the following:
TJ = TA + {[(VIN − VOUT) × ILOAD] × θJA} (3)
As shown in Equation 3, for a given ambient temperature, input-
to-output voltage differential, and continuous load current, there
exists a minimum copper size requirement for the PCB to ensure
that the junction temperature does not rise above 125°C. Figure 21
to Figure 26 show junction temperature calculations for different
ambient temperatures, load currents, VIN to VOUT differentials,
and areas of PCB copper.
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
IN
– V
OUT
(V)
JUNCTION TEMPERATURE,
T
J
(°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
MAX JUNCTION TEMPERATURE
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-021
Figure 21. WLCSP, 500 mm2 of PCB Copper, TA = 25°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
IN
– V
OUT
(V)
JUNCTION TEMPERATURE,
T
J
(°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
MAX JUNCTION TEMPERATURE
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-022
Figure 22. WLCSP, 100 mm2 of PCB Copper, TA = 25°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
IN
– V
OUT
(V)
JUNCTION TEMPERATURE,
T
J
(°C)
MAX JUNCTION
TEMPERATURE
LOAD CURRENT = 1mA
LOAD CURRENT =
10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-023
Figure 23. WLCSP, 0 mm2 of PCB Copper, TA = 25°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
IN
– V
OUT
(V)
JUNCTION TEMPERATURE, T
J
(°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
MAX JUNCTION TEMPERATURE
07874-024
Figure 24. WLCSP, 500 mm2 of PCB Copper, TA = 50°C
ADP190
Rev. 0 | Page 12 of 16
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
IN
– V
OUT
(V)
JUNCTION TEMPERATURE, T
J
(°C)
MAX JUNCTION TEMPERATURE
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-027
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
IN
– V
OUT
(V)
JUNCTION TEMPERATURE, T
J
(°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
MAX JUNCTION TEMPERATURE
07874-025
Figure 25. WLCSP, 100 mm2 of PCB Copper, TA = 50°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
IN
– V
OUT
(V)
JUNCTION TEMPERATURE, T
J
(°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
MAX JUNCTION
TEMPERATURE
07874-026
Figure 26. WLCSP, 0 mm2 of PCB Copper, TA = 50°C
Figure 27. WLCSP, TB = 85°C
PCB LAYOUT CONSIDERATIONS
Improve heat dissipation from the package by increasing the
amount of copper attached to the pins of the ADP190. However,
as listed in Table 5, a point of diminishing returns is eventually
reached, beyond which an increase in the copper size does not
yield significant heat dissipation benefits.
It is critical to keep the input and output traces as wide and as
short as possible to minimize the circuit board trace resistance.
In cases where the board temperature is known, use the thermal
characterization parameter, ΨJB, to estimate the junction temper-
ature rise. Maximum junction temperature (TJ) is calculated
from the board temperature (TB) and power dissipation (PD)
using the formula
TJ = TB + (PD × ΨJB) (4)
07874-028
Figure 28. WLCSP PCB Layout
ADP190
Rev. 0 | Page 13 of 16
OUTLINE DIMENSIONS
0
11409-A
0.050 NOM
COPLANARITY
0.800
0.760 SQ
0.720
0.230
0.200
0.170
0.280
0.260
0.240
0.660
0.600
0.540
0.430
0.400
0.370
BOTTOM VIEW
(BALL SIDE UP)
TOP VIEW
(BALL SIDE DOWN)
A
12
B
SEATING
PLANE
0.40
BALL PITCH
BALL A1
IDENTIFIE
R
Figure 29. 4-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-4-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
ADP190ACBZ-R71
−40°C to +85°C 4-Ball Wafer Level Chip Scale Package [WLCSP] CB-4-3 L9C
ADP190CB-EVALZ1
Evaluation Board
1 Z = RoHS Compliant Part.
ADP190
Rev. 0 | Page 14 of 16
NOTES
ADP190
Rev. 0 | Page 15 of 16
NOTES
ADP190
Rev. 0 | Page 16 of 16
NOTES
©2009 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07874-0-1/09(0)
