BSM 100 GB 120 DN2K IGBT Power Module * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE BSM 100 GB 120 DN2K 1200V 145A IC Package Ordering Code HALF-BRIDGE 1 C67070-A2107-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 145 TC = 80 C 100 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 290 TC = 80 C 200 Power dissipation per IGBT W Ptot TC = 25 C 700 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.18 Diode thermal resistance, chip case RthJCD 0.36 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-21-1997 BSM 100 GB 120 DN2K Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 4 mA 4.5 5.5 6.5 VGE = 15 V, IC = 100 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 100 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 1.5 2 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 6 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 100 A Input capacitance 54 nF - 6.5 - - 1 - - 0.5 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-21-1997 BSM 100 GB 120 DN2K Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Rise time - 130 260 - 80 160 - 400 600 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Fall time tf VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage V VF IF = 100 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 100 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s, Tj = 125 C Reverse recovery charge - 0.3 C Qrr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s Tj = 25 C - 4 - Tj = 125 C - 14 - 3 Oct-21-1997 BSM 100 GB 120 DN2K Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 750 W Ptot t = 16.0s p A 650 600 IC 550 10 2 100 s 500 450 400 10 1 1 ms 350 300 250 10 ms 10 0 200 150 DC 100 50 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 150 A K/W 130 IC V VCE 120 ZthJC 110 10 -1 100 90 80 10 -2 70 D = 0.50 60 0.20 0.10 50 30 0.02 single pulse 20 10 0 0 0.05 10 -3 40 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 0.01 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-21-1997 BSM 100 GB 120 DN2K Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 200 200 A IC 160 140 A 17V 15V 13V 11V 9V 7V IC 160 140 120 120 100 100 80 80 60 60 40 40 20 20 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE 5 Oct-21-1997 BSM 100 GB 120 DN2K Typ. gate charge VGE = (QGate) parameter: IC puls = 100 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 14 600 V 800 V 10 1 Ciss 12 10 8 10 0 6 Coss 4 Crss 2 0 0 100 200 300 400 500 nC 10 -1 0 700 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-21-1997 BSM 100 GB 120 DN2K Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 6.8 par.: VCE = 600 V, VGE = 15 V, IC = 100 A 10 3 10 4 ns t tdoff ns t 10 3 tdoff tdon tr 10 2 tdon tr tf 10 2 tf 10 1 0 50 100 150 A 10 1 0 250 10 20 30 40 IC 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 6.8 par.: VCE = 600V, VGE = 15 V, IC = 100 A 60 40 mWs Eon Eon mWs 50 E E 45 30 40 25 35 30 20 25 15 20 Eoff 15 10 10 5 5 0 0 Eoff 50 100 150 A 250 IC 7 0 0 10 20 30 40 60 RG Oct-21-1997 BSM 100 GB 120 DN2K Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 200 A IF Diode K/W 160 ZthJC 10 -1 140 120 Tj=125C Tj=25C 100 10 -2 D = 0.50 0.20 80 0.10 60 10 -3 40 0.05 single pulse 0.02 0.01 20 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-21-1997 BSM 100 GB 120 DN2K Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g 9 Oct-21-1997