© 2011 IXYS CORPORATION, All Rights Reserved
GenX3TM 600V IGBTs
w/ Diode
Symbol Test Conditions Maximum Ratings
VCES T
C = 25°C to 150°C 600 V
VCGR T
J = 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 T
C = 25°C 60 A
IC110 T
C = 110°C 30 A
ICM T
C = 25°C, 1ms 150 A
SSOA V
GE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A
(RBSOA) Clamped Inductive Load @ ≤ VCES
PC T
C = 25°C 220 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL 1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
Md Mounting Torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220 2.5 g
TO-263 3.0 g
DS100073A(05/11)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC = 250μA, VCE = VGE 4.0 5.5 V
ICES VCE = VCES, VGE = 0V 75 μA
TJ = 125°C 500 μA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 20A, VGE = 15V, Note 1 2.6 3.0 V
TJ = 125°C 1.8 V
VCES = 600V
IC110 = 30A
VCE(sat) ≤≤
≤≤
≤ 3.0V
tfi(typ) = 47ns
High-Speed PT IGBTs for
40-100kHz Switching
IXGA30N60C3D4
IXGP30N60C3D4
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
G = Gate D = Collector
S = Emitter Tab = Collector
TO-263 AA (IXGA)
G
E
C (Tab)
G C E
TO-220AB (IXGP)
C (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3D4
IXGP30N60C3D4
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 20A, VCE = 10V, Note 1 9 16 S
Cies 915 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 78 pF
Cres 32 pF
Qg 38 nC
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES 8 nC
Qgc 17 nC
td(on) 16 ns
tri 26 ns
Eon 0.27 mJ
td(off) 42 75 ns
tfi 47 ns
Eoff 0.09 0.18 mJ
td(on) 17 ns
tri 28 ns
Eon 0.44 mJ
td(off) 70 ns
tfi 90 ns
Eoff 0.33 mJ
RthJC 0.56 °C/W
RthCS TO-220 0.50 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 10A, VGE = 0V, Note 1 3.0 V
TJ = 150°C 1.7 V
trr 60 ns
IRM 3 A
4 A
RthJC 2.5 °C/W
IF = 10A, -diF/dt = 200A/μs
VR = 300V
TJ = 100°C
TJ = 25°C
TJ = 100°C
TO-263 Outline
Pins: 1 - Gate 2 - Drain
TO-220 Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
1 = Gate 2 = Collector
3 = Emitter
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3D4
IXGP30N60C3D4
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
7V
9V
11V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
7V
9V
11V
13V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
JunctionTemperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 10A
Fi g . 5. C o l l ecto r -to -Emitter Vo l tag e
vs. Gate-to -Emi tter Vo l t ag e
2.5
3.0
3.5
4.0
4.5
5.0
5.5
7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 40
A
20
A
10
A
T
J
= 25ºC
Fig. 6. Input Adm ittance
0
10
20
30
40
50
60
70
5 6 7 8 9 10 11
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3D4
IXGP30N60C3D4
Fi g . 11. Maximu m Tr an s ien t Ther mal I mp ed an ce
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
4
8
12
16
20
24
0 1020304050607080
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g. 10. R ever s e-B i as Safe Op e r ati n g Ar ea
0
10
20
30
40
50
60
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 20A
I
G
= 10 mA
Fig. 9. Cap acitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3D4
IXGP30N60C3D4
Fig. 12. Inductive Switching Energy Loss vs.
Gate Re sist an ce
0.2
0.3
0.4
0.5
0.6
0.7
0.8
4 6 8 101214161820
R
G
- Ohms
Eoff - MilliJoules
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive T urn-off Switching T imes vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i - Nanoseconds
20
30
40
50
60
70
80
90
t d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I C = 40A, 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Res i stance
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t f i - Nanoseconds
40
60
80
100
120
140
t d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss vs.
Co l l ecto r C u rrent
0
0.1
0.2
0.3
0.4
0.5
0.6
10 15 20 25 30 35 40
I
C
- Amperes
Eoff - MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction T emperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
1.4
E
on - MilliJoules
Eoff Eon
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching T imes vs.
Co l lecto r C urr ent
0
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40
I
C
- Amperes
t f i - Nanoseconds
20
30
40
50
60
70
80
90
100
110
t d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3D4
IXGP30N60C3D4
IXYS REF: G_30N60C3(4D)05-02-11-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector C urrent
0
10
20
30
40
50
60
70
10 15 20 25 30 35 40
I
C
- Amperes
t
r i
- Nanoseconds
10
12
14
16
18
20
22
24
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive T urn-on Switching T imes vs.
Junction T emperature
15
25
35
45
55
65
75
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
15
16
17
18
19
20
21
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate R esi stan ce
10
20
30
40
50
60
70
80
90
4 6 8 101214161820
R
G
- Ohms
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3D4
IXGP30N60C3D4
Fig. 23. Peak reverse current IRM Fig. 22. Reverse recovery charge Qr
Fig. 21. Forward current IF versus VF
Fig. 24. Dynamic parameters Qr, IRM Fig. 25. Recovery time trr versus -diF/dt Fig. 26. Peak forward voltage VFR and
Fig. 27. Transient thermal resistance junction-to-case
Constants for ZthJC calculation:
i R thi (K/W) ti (s)
1 1.449 0.0052
2 0.5578 0.0003
NOTE: Fig. 2 to Fig. 6 shows typical values
200 600 10000 400 800
40
60
80
100
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
20
40
60
0.0
0.1
0.2
0.3
VFR
diF/dt
V
200 600 10000 400 800
0
2
4
6
8
10
100 1000
0
50
100
150
200
250
0123
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns
tfr
ZthJC
A/μs
μs
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
IRM
Qr
VFR
TVJ = 100°C
VR = 300 V
TVJ = 100°C
VR = 300 V
TVJ = 100°C
VR = 300 V
DSEP 8-06B
tfr
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TVJ = 100°C
IF = 10 A
