2N5769
PN2369A
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5769 and
PN2369A are epitaxial planar NPN Silicon Transistors
designed for ultra high speed saturated switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCES 40 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 4.5 V
Continuous Collector Current IC 200 mA
Peak Collector Current ICM 500 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=20V 400 nA
ICBO V
CB=20V, TA=125°C 30 µA
ICES V
CE=20V (2N5769) 400 nA
IEBO V
EB=4.5V (2N5769) 1.0 µA
BVCBO I
C=10µA 40 V
BVCES I
C=10µA 40 V
BVCEO I
C=10mA 15 V
BVEBO I
E=10µA 4.5 V
VCE(SAT) I
C=10mA, IB=1.0mA 200 mV
VCE(SAT) I
C=30mA, IB=3.0mA 250 mV
VCE(SAT) I
C=100mA, IB=10mA 500 mV
VBE(SAT) I
C=10mA, IB=1.0mA 700 850 mV
VBE(SAT) I
C=30mA, IB=3.0mA 1.15 V
VBE(SAT) I
C=100mA, IB=10mA 1.6 V
hFE V
CE=0.35V, IC=10mA (2N5769) 40 120
hFE V
CE=1.0V, IC=10mA (PN2369A) 40 120
hFE V
CE=0.4V, IC=30mA 30
hFE V
CE=1.0V, IC=100mA 20
TO-92 CASE
R1 (10-March 2011)
www.centralsemi.com
2N5769
PN2369A
NPN SILICON TRANSISTOR
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
fT V
CE=10V, IC=10mA, f=100MHz 500 MHz
Cob V
CB=5.0V, IE=0, f=140kHz 4.0 pF
Cib V
EB=5.0V, IC=0, f=1.0MHz (PN2369A) 5.0 pF
ton V
CC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 12 ns
toff V
CC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ns
ts V
CC=10V, IC=10mA, IB1=IB2=10mA 13 ns
www.centralsemi.com
R1 (10-March 2011)
