SEMIPONTTM 6
3-Phase Bridge Rectifier
+ IGBT braking chopper
SKD 116/..L100
Preliminary Data
Features
 
  
   
  
 
  
  
!  "#$$% & &
!' ()  * + #, -,.
Typical Applications
 &
   
 
 / 
D
%012 %002) %02 34 ""$ 5  &   
% % 4 6- 7
",$$ ".$$ 18 ""#9".:'"$$
";$$ "#$$ 18 ""#9"#:'"$$
Absolute Maximum Ratings 4 .- 7)   
Symbol Conditions Values Units
Bridge - Rectifier
34 6- 7< &  ""$ 5
3=129312 4 "$ <  "6$7 <> "$-$ 5
? 4 "$ <  "6$7 <> --$$ 5?
IGBT - Chopper
%+19%@+1 ".$$ 9 .$ %
34 .- ;$ 7 ".- "$$ 5
32 4 " < 4 .- ;$ 7 .-$ .$$ 5
Freewheeling - CAL Diode
%002 ".$$ %
3=4 .- ;$ 7 ",$ A$ 5
3=2 4 " < 4 .- ;$ 7 .B$ "6$ 5
&>  C 3@ / : B$ *** D "-$ :B$***D ".- 7
 : B$ *** D ".- 7
 ) "$ .#$ 7
% ** -$ () 021 " * 9 " ,$$$ 9 ,#$$ %
Characteristics 4 .- 7)   
Symbol Conditions min. typ. max. Units
Diode - Rectifier
%E 9 >4 ".- 7 $)6 9 ; % 9 F
0>:   " 89G
IGBT - Chopper
%+ 34 "$$ 5) >4 .- 7<
%@+ 4 "- %
.),- %
0>:  3@ $), 89G
 9 &   &H "",)6 9
6B-)B

 9 % 4 #$$ %< %@+ 4 "- %<
34 ".$ 5< >4 ".- 7<
AB)B 9 6B-)B 
+D+ >4 ".- 7< 0@4 "# I<
& 
.B)B J
CAL - Diode - Freewheeling
%E 9 >4 ".- 7 " 9 6 "). 9 "" % 9 F
0>:   $)# 89G
3002 &   &H #- 5
K 3=4 "$$ 5< %04 : :#$$ %<
3=9 4 : :"$$$ 59L
"- L
+ %@+ 4$%<>4 ".- 7 J
Temperature Sensor
01 4 .- "$$ 7< "$$$ "#;$ F
Mechanical data
21 M .)-- ,)B- N
SKD 116/..L100
1 05-09-2007 DIL © by SEMIKRON
Fig. 1 Power dissipation per module vs. output current Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode Fig. 4 Temperature sensor characteristic
Fig. 5 Typ. gate charge characteristic Fig. 6 Output IGBT characteristics Ic=f(Vce), Tj=25°C
SKD 116/..L100
2 05-09-2007 DIL © by SEMIKRON
Fig. 7 Output IGBT characteristics Ic=f(Vce), Tj=125°C Fig. 8 Turn-on/-off energy=f(Ic)
Fig. 9 Turn-on/-off energy=f(Rg) Fig. 10 Diode forward characteristic
SKD 116/..L100
3 05-09-2007 DIL © by SEMIKRON
UL recognized
File n&#176; E63 532 Dimensions in mm
 @ #$
 @ #$
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKD 116/..L100
4 05-09-2007 DIL © by SEMIKRON