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FCP16N60N / FCPF16N60NT N-Channel SupreMOS(R) MOSFET 600 V, 16 A, 199 m Features Description * RDS(on) = 170 m (Typ.) @ VGS = 10 V, ID = 8 A The SupreMOS(R) MOSFET is Fairchild Semiconductor's next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. * Ultra Low Gate Charge (Typ. Qg = 40.2 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF) * 100% Avalanche Tested * RoHS Compliant Application * LCD/LED/PDP TV * Lighting * Solar Inverter * AC-DC Power Supply D GD S G G D S TO-220 TO-220F S Absolute Maximum Ratings TC = 25 C unless otherwise noted. o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FCP16N60N FCPF16N60NT 600 Unit V 30 - Continuous (TC = 25oC) V 16.0 16.0* 10.1 10.1* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5.3 A EAR Repetitive Avalanche Energy (Note 1) 1.34 mJ 100 V/ns dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) 48.0* Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds - Derate Above 25oC A 355 MOSFET dv/dt PD TL 48.0 A mJ 20 V/ns 134.4 35.7 W 1.08 0.29 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP16N60N FCPF16N60NT RJC Thermal Resistance, Junction to Case, Max. 0.93 3.5 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 1 Unit o C/W www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET November 2013 Part Number FCP16N60N Top Mark FCP16N60N Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF16N60NT FCPF16N60NT TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit ID = 1 mA, VGS = 0V, TC = 25oC 600 - - V ID = 1 mA, Referenced to 25oC - 0.73 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 480 V, VGS = 0 V - - 10 VDS = 480 V, VGS = 0 V, TC = 125oC - - 100 VGS = 30 V, VDS = 0 V - - 100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 8 A - 0.170 0.199 gFS Forward Transconductance VDS = 40 V, ID = 8 A - 13 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 1630 2170 pF - 70 95 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 5 10 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 40 60 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 176 - pF Qg(tot) Total Gate Charge at 10V - 40.2 52.3 nC Qgs Gate to Source Gate Charge VDS = 380 V, ID = 8 A, VGS = 10 V Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance (G-S) (Note 4) - 6.7 - nC - 12.9 - nC f = 1 MHz 2.9 Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 8 A, VGS = 10 V, RG = 4.7 (Note 4) - 15.8 41.6 ns - 15.5 41.0 ns - 60.3 130.6 ns - 20.2 50.4 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 16 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 8 A - - 1.2 V trr Reverse Recovery Time - 319 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 8 A, dIF/dt = 100 A/s - 4.4 - C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 5.3 A, RG = 25 , starting TJ = 25C. 3. ISD 16 A, di/dt 200 A/s, VDD = 380 V, starting TJ = 25C 4. Essentially independent of operating temperature typical characteristics. (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 2 www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V 10 ID, Drain Current[A] ID, Drain Current[A] 100 1 10 o 150 C o 25 C o -55 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.1 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.5 0.4 VGS = 10V 0.3 VGS = 20V 0.2 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.1 *Notes: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 10000 VGS, Gate-Source Voltage [V] 5000 2500 *Notes: 1. VGS = 0V 2. f = 1MHz Ciss VDS = 120V VDS = 380V VDS = 480V 8 6 4 2 Crss 0 0.1 1 10 100 VDS, Drain-Source Voltage [V] (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 1.6 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 2. 250s Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 7500 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.6 RDS(ON) [], Drain-Source On-Resistance 2 0 600 3 *Notes: ID = 8A 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area for FCP16N60N *Notes: 1. VGS = 10V 2. ID = 8A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area for FCPF16N60NT 100 100 20s 100s 10 ID, Drain Current [A] ID, Drain Current [A] 20s 1ms DC 1 10ms Operation in This Area is Limited by R DS(on) *Notes: 0.1 100s 10 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o o 1. TC = 25 C 1. TC = 25 C o 0.01 200 o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0.01 1000 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 20 15 10 5 0 25 50 75 100 125 o TC, Case Temperature [ C] (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 150 4 www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET Typical Performance Characteristics (Continued) FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve for FCP16N60N o ZJC (t), Thermal Response Thermal Response [ZJC[ ]C/W] 2 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 o 0.01 0.01 t2 *Notes: 0.02 1. ZJC(t) = 0.93 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.005 -5 10 -4 10 -3 -2 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration[sec] [sec] -1 10 1 Figure 13. Transient Thermal Response Curve for FCPF16N60NT ZJC (t), Thermal Response [o]C/W] Thermal Response [ZJC 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 o 1. ZJC(t) = 3.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 t2 *Notes: 0.01 -4 10 -3 -2 -1 10 10 10 1 t1Rectangular , RectangularPulse Pulse Duration Duration [sec] [sec] 5 10 2 10 www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 6 www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 7 www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 8 www.fairchildsemi.com FCP16N60N / FCPF16N60NT -- N-Channel SupreMOS(R) MOSFET Mechanical Dimensions Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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