DATA SH EET
Product specification
Supersedes data of 1998 Sep 15 2004 Feb 10
DISCRETE SEMICONDUCTORS
BB131
VHF variable capacitance diode
2004 Feb 10 2
NXP Semiconductors Product specification
VHF variable capacitance diode BB131
FEATURES
Excellent linearity
Very small plastic SMD packag e
C28: 1 pF; ratio: 14.
APPLICATIONS
Electronic tuning in satellite tuners
Tunable coupling
VCO.
DESCRIPTION
The BB131 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323
(SC-76) very small plastic SMD package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
sym008
21
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
Marking code: P1.
The marking bar indicates the cathode.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BB131 plastic surfa ce mounted package; 2 leads SO D323
SYMBOL PARAMETER MIN. MAX. UNIT
VRcontinuous revers e voltage 30 V
IFcontinuous forwa rd c urrent 20 mA
Tstg storage temperature 55 +150 C
Tjoperating junction temperature 55 +125 C
2004 Feb 10 3
NXP Semiconductors Product specification
VHF variable capacitance diode BB131
CHARACTERISTICS
Tj=25C unless otherwise specified.
Note
1. VR is the value at which Cd=9pF.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IRreverse current VR=30V; seeFig.3 10 nA
VR=30V; T
j=85C; see Fig.3 200 nA
rsdiode series resistance f = 470 MHz; note 1 3
Cddiode capacitance VR=0.5V; f=1MHz; seeFigs2and4 8 17 pF
VR= 28 V; f = 1 MHz; see Figs 2 and 4 0.7 1.055 pF
capac i tance ratio f = 1 MHz 12 16
Cd0.5V
Cd28V
--------------------
2004 Feb 10 4
NXP Semiconductors Product specification
VHF variable capacitance diode BB131
GRAPHICAL DATA
handbook, full pagewidth
0
15 MBE872
102
10110−1
5
10
Cd
(pF)
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
Tj=25C; f = 1 MHz.
Fig.3 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
1000
10
MLC816
102
103
50
IR
(nA)
T ( C)
jo
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical va lues.
handbook, halfpage
MLC815
11010
2
10 3
10 4
10 5
10 1
(K−1)
V (V)
R
d
TC
Tj=0to85C.
2004 Feb 10 5
NXP Semiconductors Product specification
VHF variable capacitance diode BB131
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD323
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1c
Q
HDvA
M
X
2004 Feb 10 6
NXP Semiconductors Product specification
VHF variable capacitance diode BB131
DATA SHEET STATUS
Notes
1. Please consult the most recently issued documen t b efore initiating or completing a design.
2. The product status of device (s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
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Applications Applications that are described herein for
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2004 Feb 10 7
NXP Semiconductors Product specification
VHF variable capacitance diode BB131
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Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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Printed in The Netherlands R77/03/pp8 Date of relea se: 2004 Feb 10
