_ - nee eee eee 6368602 SOLITRON DEVICES INC 61C 01277. DTP B-CE- SOLITRON DEVICES INC bl DE Bazcance noo1es? & i: Lolitron Devices, Inc. = <:,zeapais, 4 . , Mo. ((2AHB3I51-) 4% SPECIFICATIONS a XN 3154 FS-2o0l DR 117149 TYPED NPA MAXIMUM RATINGS | CASE: TO~lsH) Voltage, Collector to Base (Vego) see e ees beeen teen een ennanes wae 50 V Voltage, Collector to Emitter (Vgo) rere errr 150 V Voltage, Emitter to Base (Vepg) ee eee reer e teeters ace e eee e eens __ jo Vv Collector Current (I,) dee ceeeeeeneeeees seeeee peeeees eens eee n tenes __76 A Base Current (Ip) ...-. cece caeeceuneeeeeeeteeneeenes Lecce een eeeees __ 5" A | Maximum Thermal Resistance, Junction to Case sees eee eae Le ceeeeeaes ___ 0-57 c/w _ Maximum Junction Temperature .......ee eure beceeueees eeeaes 65 To 706 % Power of Transistor (P.) T, = 100C cece eee egeeaeeees epee eeeeeaseees ___ BOO _ WATTS - TA = 269C PERFORMANCE CHARACTERISTICS UNLESS OTHERWISE NOTED SYMBOL CONDITIONS MIN. MAX, UNITS tc . O L-E = 1.0 L- =/S50V_\-eg= L5Y -_ -F _ id= = -T-@2 56 1-8-3 I-c= 506 JI-p= =/50V V-EB=/. 10 11 12 13 14 15 16 17 ig i9 20 NOTES: a PULSED: PW, = 360USEd j 2.0.= Z20 2 - REY 'DY REWRITE NEW Remar. VEve, 4233. |. MODED THREE DIG sf EPC PARKS a g- 0 og | A-N-2 &. eal 3/57 - Ye Customer: Se ee GEN ECM Ppanee