BPW34FA - Infineon Technologies

BPW 34 FA

Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing

Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing

BPW 34 FAS BPW 34 FAS (E9087)

2001-02-21 1

BPW34FA, BPW34FAS, BPW34FAS (E9087)

Wesentliche Merkmale

• Speziell g eeignet für den Welle nlängenbereich

von 830 nm bis 880 nm

• Kurze Schaltzeit (typ. 20 ns)

• DIL-Plastikbauform mit hoher Packungsdichte

• BPW 34 FAS/(E9087): geeignet für

Vapor-Phase Löten und IR-Reflow Löten

Anwendungen

• IR-Fernsteuerung von Fernseh- und

Rundfunkgeräten, Videorecordern,

Gerätefernsteuerung

• Lichtschranken für Gleich- und

Wechsellichtbetrieb

Typ

Type Bestellnummer

Ordering Code

BPW 34 FA Q62702-P1129

BPW 34 FAS Q62702-P463

BPW 34 FAS (E9087) Q62702-P1829

Features

• Especially s uitable for the wavelength range of

830 nm to 880 nm

• Short switching time (typ. 20 ns)

• DIL plastic package with high packing density

• BPW 34 FAS/(E9087): Suitable for

vapor-phase and IR-reflow soldering

Applications

• IR-remote control of hi-fi and TV sets, video

tape recorders, remote controls of various

equipment

• Photointerrupters

2001-02-21 2

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 …+ 100 °C

Sperrspannung

Reverse voltage VR12 V

Verlustleistung, TA = 25 °C

Total power dissipation Ptot 150 mW

Kennwerte (TA = 25 °C, λ = 870 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Fotostrom

Photocurrent

VR = 5 V, Ee = 1 mW/cm2

Ip50 (≥ 40) µA

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λS max 880 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectral range of sensitivity

S = 10% of Smax

λ730 …1100 nm

Bestrahlungsempfindl iche Fläche

Radiant sensitive area A7.00 mm2

Abmessung der bestrahlungsempfindlichen

Fläche

Dimensions of radiant sensitive area

L×B

L×W

2.65 ×2.65 mm ×mm

Halbwinkel

Half angle ϕ±60 Grad

deg.

Dunkelstrom, VR = 10 V

Dark current IR 2 (≤ 30) nA

Spektrale Fotoempfindlichke it

Spectral sensitivity Sλ0.65 A/W

Quantenausbeute

Quantum yield η0.93 Electrons

Photon

Leerlaufspannung, Ee = 0.5 mW/cm2

Open-circuit voltage VO320 (≥ 250) mV

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)

2001-02-21 3

Kurzschlußstrom, Ee = 0.5 mW/cm2

Short-circuit current ISC 23 µA

Anstiegs- und Abfallzeit des Fotostromes

Rise and fall time of the photocurrent

RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA

tr, tf20 ns

Durchlaßspannung, IF = 100 mA, E = 0

Forward voltage VF1.3 V

Kapazität, VR = 0 V, f = 1 MHz, E = 0

Capacitance C072 pF

Temperaturkoeffizient von VO

Temperature coefficient of VO

TCV– 2.6 mV/K

Temperaturkoeffizient von ISC

Temperature coefficient of ISC

TCI0.03 %/K

Rauschäquivalente Strahlungsleistung

Noise equivalent power

VR = 10 V

NEP 3.9 ×10– 14

Nachweisgrenze, VR = 10 V,

Detection limit D* 6.8 ×1012

Kennwerte (TA = 25 °C, λ = 870 nm)

Characteristics (cont’d)

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

------------

cm Hz×

--------------------------

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)

2001-02-21 4

Relati ve Sp ectral Sen si ti vi ty

Srel = f (λ)

Dark Current

IR = f (VR), E = 0

Directional Characteristi cs

Srel = f (ϕ)

OHF01430

400

rel

0600 800 1000 nm 1200

100

OHF00080

05 10 15 V 20

1000

2000

3000

4000

OHF01402

40 30 20 10

20 40 60 80 100 1200.40.60.81.0

0.2

0.4

0.6

0.8

1.0

100 0

Photocurrent IP = f (Ee), VR = 5 V

Open-Ci r cu it V oltage VO = f (Ee)

Capacitance

C = f (VR), f = 1 MHz, E = 0

OHF01428

-1

10 10 110 210 4

10 0

10 1

10 2

10 34

10 0

AmV

W/cm

OHF00081

-2

-1

10V

100

Total Power Dissipation

Ptot = f (TA)

Dark Current

IR = f (TA), VR = 10 V, E = 0

OHF00958

tot

020 40 60 80 ˚C 100

100

120

140

160

OHF00082

-1

10 0

10 1

10 2

10 3

20 40 60 80 ˚C 100

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)

2001-02-21 5

Maßzeichnung

Package Outlines

Maße werden wi e fo lgt angegeben: m m (inc h) / Di m ensions are s pecified as follo w s: mm (inch).

GEOY6643

4.0 (0.157)

3.7 (0.146) 4.3 (0.169)

4.5 (0.177)

5.4 (0.213)

4.9 (0.193)

0.6 (0.024)

0.4 (0.016)

0.6 (0.024)

0.4 (0.016)

1.2 (0.047)

0.7 (0.028)

0.3 (0.012)

0.5 (0.020)

0.8 (0.031)

0.6 (0.024)

Cathode marking

0.6 (0.024)

0.8 (0.031)

1.9 (0.075)

2.2 (0.087)

3.0 (0.118)

3.5 (0.138)

0.6 (0.024)

0.4 (0.016)

Chip position

0.4 (0.016)

0.6 (0.024)

0.35 (0.014)

0.2 (0.008)

0 ... 5˚

5.08 (0.200)

spacing

1.4 (0.055)

Photosensitive area

2.65 (0.104) x 2.65 (0.104)

1.8 (0.071)

BPW 34 FA

BPW 34 FAS

4.5 (0.177)

4.3 (0.169)

4.0 (0.157)

3.7 (0.146)

1.5 (0.059)

1.7 (0.067)

0.9 (0.035)

0.7 (0.028)

Photosensitive area Cathode lead

GEOY6863

0.3 (0.012)

6.7 (0.264)

6.2 (0.244)

1.2 (0.047)

1.1 (0.043)

(0...0.004)

0...5˚

0.2 (0.008)

0.1 (0.004)

1.1 (0.043)

0.9 (0.035)

2.65 (0.104) x 2.65 (0.104)

1.8 (0.071)

±0.2 (0.008)

Chip position

0...0.1

2001-02-21 6

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)

Maße werden wi e fo lgt angegeben: m m (inc h) / Di m ensions are s pecified as follo w s: mm (inch).

Published by OSRAM Opto Semiconductors GmbH & Co. OHG

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform at ion describes the type of co m ponent and sha ll not be c ons idered as assured char ac te ris tics .

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain

and sust ain human life. If th ey fail, it is reasonable to assu me that the health of the user m ay be endangered.

BPW 34 FAS (E9087)

4.5 (0.177)

4.3 (0.169)

4.0 (0.157)

3.7 (0.146)

1.5 (0.059)

1.7 (0.067)

0.9 (0.035)

0.7 (0.028)

Photosensitive area Cathode lead

GEOY6916

0.3 (0.012)

6.7 (0.264)

6.2 (0.244)

1.2 (0.047)

1.1 (0.043)

(0...0.004)

0...5˚

0.2 (0.008)

0.1 (0.004)

1.1 (0.043)

0.9 (0.035)

2.65 (0.104) x 2.65 (0.104)

1.8 (0.071)±0.2 (0.008)

0...0.1

Chip position