US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultra Fast Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated pallet chip junction * Ultrafast reverse recovery time Available * Low switching losses, high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMA (DO-214AC) * AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A trr 50 ns, 75 ns VF at IF 1.0 V, 1.7 V TJ max. 150 C Package SMA (DO-214AC) Diode variations Single For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code US1A US1B US1D US1G US1J US1K US1M UNIT UA UB UD UG UJ UK UM Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 110 C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -55 to +150 C Operating and storage temperature range Revision: 21-Jul-17 Document Number: 88768 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A SYMBOL US1A US1B US1D US1G US1J US1K US1M VF (1) TA = 25 C Maximum DC reverse current at rated DC blocking voltage 1.0 10 IR TA = 100 C 1.7 UNIT V A 50 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 10 pF Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M Maximum thermal resistance RJA (1) 75 RJL (1) 27 UNIT C/W Note (1) PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 61T 1800 7" diameter plastic tape and reel US1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel US1J-E3/61T US1JHE3_A/I (1) US1J-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel US1J-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel US1JHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 21-Jul-17 Document Number: 88768 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Average Forward Rectified Current (A) 1.2 100 1.0 0.8 0.6 0.4 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 TJ = 150 C Instantaneous Reverse Leakage Current (A) Resistive or Inductive Load 0 TJ = 100 C 1 0.1 US1A thru US1G TJ = 25 C 0.01 0 25 50 100 75 125 0 150 20 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 100 Instantaneous Forward Current (A) TL = 110 C 8.3 ms Single Half Sine-Wave 25 20 15 10 5 TJ = 150 C 1 10 TJ = 125 C 10 TJ = 100 C 1 TJ = 25 C 0.1 TJ = -40 C US1J thru US1M 0.01 0 0.2 100 Number of Cycles at 60 Hz 0.7 1.2 1.7 2.2 2.7 3.2 3.7 Instantaneous Forward Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Instantaneous Forward Characteristics 100 1000 10 Instantaneous Reverse Leakage Current (A) Instantaneous Forward Current (A) 40 Lead Temperature (C) 30 Peak Forward Surge Current (A) TJ = 125 C 10 TJ = 150 C TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C TJ = -40 C US1A thru US1G 0.01 TJ = 150 C 100 TJ = 125 C 10 TJ = 100 C 1 US1J thru US1M 0.1 TJ = 25 C 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 6 - Typical Reverse Leakage Characteristics Revision: 21-Jul-17 Document Number: 88768 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p US1A thru US1G 10 Transient Thermal Impedance (C/W) Junction Capacitance (pF) 100 US1J thru US1M 1 0.1 1 10 10 1 0.1 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 7 - Typical Junction Capacitance Fig. 8 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Jul-17 Document Number: 88768 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: US1AHE3_A/H US1KHE3_A/I US1BHE3_A/I US1KHE3_A/H US1DHE3_A/I US1GHE3_A/H US1BHE3_A/H US1AHE3_A/I US1MHE3_A/I US1JHE3_A/I US1JHE3_A/H US1GHE3_A/I US1MHE3_A/H US1DHE3_A/H US1MM3/5AT US1G-M3/61T US1A-M3/5AT US1J-M3/5AT US1K-M3/5AT US1B-M3/61T US1D-M3/61T US1M-M3/61T US1J-M3/61T US1D-M3/5AT US1B-M3/5AT US1K-M3/61T US1G-M3/5AT US1A-M3/61T