February 2010 Doc ID 17080 Rev 1 1/8
8
T620W
6 A Snubberless™ Triac
Features
■IT(RMS) = 6 A
■VDRM = VRRM = 600 and 800 V
Description
The high commutation performance of this device
is based on Snubberless technology from ST. The
T620W is especially suited for high inductance
loads. This device complies with UL standards
(Ref. E81734).
Table 1. Device summary
Symbol Value Unit
IT(RMS) 6A
VDRM/VRRM 600 and 800 V
IGT 20 mA
A2
A1
G
G
A2
A1
ISOWATT220AB
(Plastic)
www.st.com
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Characteristics T620W
2/8 Doc ID 17080 Rev 1
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
IT(RMS) On-state rms current (full sine wave) Tc = 105°C 6 A
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz t = 20 ms 80 A
F = 60 Hz t = 16.7 ms 84
I²tI
²t Value for fusing tp = 10 ms 36 A²s
dI/dt Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Value Unit
IGT (1)
1. Minimum IGT is guaranted at 5% of IGT max.
VD = 12 V RL = 30 Ω
I - II - III Max. 20 mA
VGT I - II - III Max. 1.3 V
VGD VD = VDRM RL = 3.3 kΩTj = 125 °C I - II - III Min. 0.2 V
IH (2)
2. For both polarities of A2 referenced to A1
IT = 100 mA Max. 35 mA
ILIG = 1.2 IGT
I - III Max. 50 mA
II 60
dV/dt (2) VD = 67 %VDRM gate open Tj = 125 °C Min. 300 V/µs
(dI/dt)c (2) Without snubber Tj = 125 °C Min. 3.3 A/ms
Table 4. Static characteristics
Symbol Test conditions Value Unit
VT (1)
1. For both polarities of A2 referenced to A1
ITM = 8.5 A tp = 380 µs Tj = 25 °C Max. 1.4 V
Vt0 (1) Threshold voltage Tj = 125 °C Max. 0.85 V
Rd (1) Dynamic resistance Tj = 125 °C Max. 50 mΩ
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C Max. 5µA
Tj = 125 °C 1 mA
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T620W Characteristics
Doc ID 17080 Rev 1 3/8
Table 5. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) (360° conduction angle) 3.4 °C/W
Rth(j-a) Junction to ambient 50 °C/W
Figure 1. Maximum power dissipation versus
rms on-state current
Figure 2. On-state rms current versus case
temperature
0
1
2
3
4
5
6
7
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
P(W)
I (A)
T(RMS)
α=180°
180°
α
α
0
1
2
3
4
5
6
7
0 25 50 75 100 125
I (A)
T(RMS)
T (°C)
C
α=180°
Figure 3. Relative variation of thermal
impedance versus pulse duration
Figure 4. On-state characteristics
(maximum values)
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
K=[Z /R
th th]
t (s)
p
Z
th(j-a)
Z
th(j-c)
I (A)
TM
1
10
100
0123456
T max.
V = 0.85V
R = 50 m
j
t0
dΩ
V (V)
TM
T=
jT max.
j
T = 25°C
j
Figure 5. Surge peak on-state current versus
number of cycles
Figure 6. Non-repetitive surge peak on-state
current for a sinusoidal
0
10
20
30
40
50
60
70
80
90
1 10 100 1000
I (A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =105°C
C
t(ms)
p
T initial=25°C
j
I (A), I t (A s)
TSM
22
I
TSM
I t
2
dI/dt limitation:
50A/µs
10
100
1000
0.01 0.10 1.00 10.00
Pulse with width t < 10 ms and corresponding value of I t
p
2
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Characteristics T620W
4/8 Doc ID 17080 Rev 1
Figure 9. Relative variation of critical rate of decrease of main current versus junction
temperature
Figure 7. Relative variation of gate trigger
current, holding current and
latching
Figure 8. Relative variation of critical rate of
decrease of main current versus
reapplied (dV/dt)c (typical value)
I,I,I[T] /
GTHL j I ,I ,I [T =25°C]
GTHL j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
T (°C)
j
I
GT
I
H
& I
L
Current versus junction temperature
(typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1.0 10.0 100.0
(dV/dt) (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0
1
2
3
4
5
6
7
8
0 25 50 75 100 125
(dI/dt)c [T ] /
j
(dI/dt)c [T = 125°C]
j
T (°C)
j
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T620W Ordering information scheme
Doc ID 17080 Rev 1 5/8
2 Ordering information scheme
Figure 10. Ordering information scheme
T 6 20 - x00 W
Triac series
Current
Sensitivity
Voltage
Package
6 = 6A
20 = 20mA
600 = 600V
800 = 800V
W = ISOWATT220AB
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Package information T620W
6/8 Doc ID 17080 Rev 1
3 Package information
●Epoxy meets UL94, V0
●Cooling method: by conduction (C)
●Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. ISOWATT220AB dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
H
A
B
Dia
L7
L6
F1
F2
F
D
E
L4
G1
G
L2
L3
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T620W Ordering information
Doc ID 17080 Rev 1 7/8
4 Ordering information
5 Revision history
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
T620-600W T620600W ISOWATT220AB 2.3 g 50 Tube
T620-800W T620800W
Table 8. Document revision history
Date Revision Changes
09-Feb-2010 1 Document split into T620W and T630W. This document provides
information for the T620W.
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T620W
8/8 Doc ID 17080 Rev 1
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