MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Packages* DPAK CASE 369C STYLE 1 MARKING DIAGRAM AYWW J2x0G A Y WW G = Assembly Location = Year = Work Week x = 1 or 0 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 - Rev. 12 1 Publication Order Number: MJD200/D MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Max Unit VCB 40 Vdc VCEO 25 Vdc VEB 8.0 Vdc Collector Current Continuous Peak IC Base Current IB Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg Adc 5.0 10 1.0 Adc 12.5 0.1 W W/C 1.4 0.011 W W/C -65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 10 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 89.3 C/W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 25 - Vdc - - 100 100 nAdc mAdc - 100 nAdc 70 45 10 - 180 - - - - 0.3 0.75 1.8 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3), (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125C) VCBO Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) VEBO ON CHARACTERISTICS C Current Gain (Note 3), (IC = 500 mAdc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 2 Vdc) hFE - Collector-Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 2 Adc, IB = 200 mAdc) (IC = 5 Adc, IB = 1 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (Note 3), (IC = 5 Adc, IB = 1 Adc) VBE(sat) - 2.5 Vdc Base-Emitter On Voltage (Note 3), (IC = 2 Adc, VCE = 1 Vdc) VBE(on) - 1.6 Vdc 65 - - - 80 120 DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT MJD200 MJD210, NJVMJD210T4G 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe ftest. http://onsemi.com 2 Cob MHz pF MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) ORDERING INFORMATION Package Type Shipping MJD200G DPAK (Pb-Free) 75 Units / Rail MJD200RLG DPAK (Pb-Free) 1,800 / Tape & Reel MJD200T4G DPAK (Pb-Free) 2,500 / Tape & Reel MJD210G DPAK (Pb-Free) 75 Units / Rail MJD210RLG DPAK (Pb-Free) 1,800 / Tape & Reel Device MJD210T4 DPAK 2,500 / Tape & Reel MJD210T4G DPAK (Pb-Free) 2,500 / Tape & Reel NJVMJD210T4G DPAK (Pb-Free) 2,500 / Tape & Reel TA 2.5 TC 25 2 20 VCC +30 V 25 ms RC +11 V 1.5 0 15 SCOPE RB -9 V 1 10 0.5 5 0 0 TA (SURFACE MOUNT) tr, tf 10 ns DUTY CYCLE = 1% TC D1 51 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 25 50 75 100 125 D1 MUST BE FAST RECOVERY TYPE, e.g.: FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE IB 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB 100 mA 150 T, TEMPERATURE (C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit 1K 10K td 500 300 200 5K 3K 2K 100 50 30 20 tr 10 5 3 2 ts 1K t, TIME (ns) t, TIME (ns) PD, POWER DISSIPATION (WATTS) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. VCC = 30 V IC/IB = 10 TJ = 25C 500 300 200 100 50 30 20 MJD200 MJD210 1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (A) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 5 10 MJD200 MJD210 tf 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (A) Figure 3. Turn-On Time Figure 4. Turn-Off Time http://onsemi.com 3 3 5 10 MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) NPN MJD200 400 PNP MJD210 400 TJ = 150C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 25C 200 -55C 100 80 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (A) 25C 100 80 -55C 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 5 3 TJ = 150C 200 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (A) 3 5 Figure 5. DC Current Gain 2 2 TJ = 25C TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) 2 3 VCE(sat) @ IC/IB = 10 0 0.2 0.3 0.5 0.7 1 0.05 0.07 0.1 IC, COLLECTOR CURRENT (A) 5 2 3 5 3 5 Figure 6. "On" Voltage +2 +2.5 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) +2.5 *APPLIES FOR IC/IB hFE/3 +1.5 +1 +0.5 25C to 150C qVC for VCE(sat) 0 -0.5 -55C to 25C -1 25C to 150C -1.5 qVB for VBE -2 -2.5 0.05 0.07 0.1 -55C to 25C 0.2 0.3 0.5 0.7 1 2 3 +2 *APPLIES FOR IC/IB hFE/3 +1.5 25C to 150C +1 +0.5 *qVC for VCE(sat) 0 -55C to 25C -0.5 25C to 150C -1 -1.5 qVB for VBE -2 -2.5 0.05 0.07 0.1 5 -55C to 25C IC, COLLECTOR CURRENT (A) 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) Figure 7. Temperature Coefficients http://onsemi.com 4 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.1 0.07 0.05 0.02 0.01 0.03 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 8. Thermal Response 5 3 2 1 0.1 0.01 0.3 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5ms TJ = 150C 100ms 1ms 500ms dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 Figure 9. Active Region Safe Operating Area 200 TJ = 25C C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 10 Cib 100 70 50 Cob MJD200 (NPN) MJD210 (PNP) 30 20 0.4 0.6 1 2 4 6 10 VR, REVERSE VOLTAGE (V) Figure 10. Capacitance http://onsemi.com 5 20 40 MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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