EGP10A-EGP10K
EPG10A - EPG10K, Rev. A
EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
IOAverage Rectified Current
.375 " lea d length @ TL = 55°C1.0 A
if(surge) Pe ak Forward Surge Current
8.3 ms single half-sine-wave
Superimpo sed on rated load (JEDEC method) 30 A
PDTotal Device Dissipation
Derate above 25°C2.5
17 W
mW/°C
RθJA Thermal Re sistance, Junction to Amb ient 50 °C/W
Tstg Storage Temperature Range -65 to +150 °C
TJOperating Junction Tempe rature -65 to +150 °C
1999 Fairchild Semiconductor Corporation
Features
•Superfast recovery time for high
efficiency.
•Low forward voltage, high current
capability.
• Low leakage current.
• High surge current capability.
Parameter Device Units
10A 10B 10C 10D 10F 10G 10J 10K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)50 100 150 200 300 400 600 800 V
Maximum Reverse Current
@ rated VRTA = 25°C
TA = 125°C5.0
100 µA
µA
Maximum Reverse Recov ery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50 75 nS
Maximum Forwa rd Voltage @ 1.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz 22 15 pF
DO-41
COLOR BAND DENOTES CATHODE
1.0 min (25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
D i mensions in
inches (mm)
Discrete POWER & Signal
Technologies
EGP10A-EGP10K
EPG10A - EPG10K, Rev. A
Typical Characteristics
Pulse
Generator
(Note 2)
50
Ω
NONINDUCTIVE 50
Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 n s/ cm
Non-Repetitive Su rge Current
1 2 5 10 20 50 100
0
5
10
15
20
25
30
NUMBER OF CYCLES AT 60Hz
P EA K FOR WARD SU R GE CURRE N T (A)
F orwar d Charac t eristi cs
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
50
FORW ARD VOLT AGE (V)
FOR WAR D CU RR ENT (A)
P ulse Width = 300µs
2% Duty Cycle
T = 25 C
º
A
EGP10A-EGP10D
EGP10F-EGP10K
T = 150 C
º
A
Rev ers e C harac te ri s ti cs
0 20406080100120140
0.01
0.1
1
10
100
1000
PER CENT OF R ATE D PEA K RE VER SE VOLTAGE ( % )
REVERSE CURRENT ( A)
µ
T = 25 C
º
A
T = 100 C
º
A
T = 125 C
º
A
Junction Capacitance
0.1 1 10 100 1000
0
10
20
30
40
50
60
REVERSE VOLT AGE (V)
CAPACITANCE (pF)
EGP10F -EGP10K
EGP10A-EGP10D
For wa rd Cur rent Derat in g Curve
25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
LEAD TEMPE R AT UR E ( C)
FO RWAR D CURRE NT (A )
º
SINGLE PHA SE
HALF WAVE
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTH S
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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Definition of Terms
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Advance Information
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Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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