INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
6/25/02
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 13
IC @ TC = 100°C Continuous Collector Current 7.0
ICM Pulsed Collector Current 26
ILM Clamped Inductive Load Current 26 A
IF @ TC = 25°C Diode Continuous Forward Current 13
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 26
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 90
PD @ TC = 100°C Maximum Power Dissipation 36
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
W
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• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 1.4
RθJC Junction-to-Case - Diode ––– ––– 4.4
RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)––– ––– 40
Wt Weight ––– 1.44 ––– g
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
E
G
n-channel
C
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
D2Pak
IRGS6B60KD
TO-220AB
IRGB6B60KD TO-262
IRGSL6B60KD
PD - 94381D
IRG/B/S/SL6B60KD
2www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig.
5, 6,7
9,10,11
9,10,11
12
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 60 0 –– – ––– V V GE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V IC = 5.0A, VGE = 15V
––– 2.20 2.50 IC = 5.0A,VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5 .5 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe Forward Transconductance ––– 3.0 ––– S VCE = 50V, I C = 5.0A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.25 1.45 I C = 5.0A
––– 1.20 1.40 V IC = 5.0A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– – –– ±100 nA V GE = ±20V
8
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) –– – 18.2 ––– IC = 5.0A
Qge Gate - Emitter Charge (turn-on) ––– 1.9 ––– nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) ––– 9.2 ––– VGE = 15V
Eon Turn-On Switching Loss ––– 110 210 µJ IC = 5.0A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 135 245 VGE = 15V,RG = 100Ω, L =1.4mH
Etot Total Switching Loss ––– 245 455 Ls = 150nH TJ = 25°C
td(on) Turn-On Delay Time ––– 25 34 IC = 5.0A, VCC = 400V
trRise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH
td(off) Turn-Off Delay Time – –– 215 230 ns Ls = 150nH, T J = 25°C
tfFall Time ––– 13.2 22
Eon Turn-On Switching Loss – – – 150 260 IC = 5.0A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH
Etot Total Switching Loss ––– 340 560 Ls = 150nH TJ = 150°C
td(on) Turn-On Delay Time ––– 28 37 IC = 5.0A, VCC = 400V
trRise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH
td(off) Turn-Off Delay Time – –– 240 255 ns Ls = 150nH, T J = 150°C
tfFall Time ––– 18 27
Cies Input Capacitance ––– 290 ––– VGE = 0V
Coes Output Capacitance ––– 34 – –– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 10 ––– f = 1.0MHz
TJ = 150°C, IC = 26A, Vp =600V
VCC = 500V, VGE = +15V to 0V,
µs TJ = 150°C, Vp =600V, RG = 100Ω
VCC = 360V, VGE = +15V to 0V
Erec Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C
trr Diode Reverse Recovery time ––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH
Irr Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 – –– –––
Ref.Fig.
CT1
CT4
CT4
13,15
WF1WF2
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
CT4
RG = 100Ω
14, 16
CT4
WF1
WF2
Note to are on page 15
IRG/B/S/SL6B60KD
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 160
TC (°C)
0
5
10
15
IC (A)
0 20 40 60 80 100 120 140 160
TC (°C)
0
10
20
30
40
50
60
70
80
90
100
Ptot (W)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
IC (A)
10 µs
100 µs
1ms
DC
10 100 1000
VCE (V)
0
1
10
100
IC A)
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Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
0123456
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE (A)
VGE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
0123456
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE (A)
VGE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
0.0 0.5 1.0 1.5 2.0
VF (V)
0
5
10
15
20
25
30
IF (A)
-40°C
25°C
150°C
0123456
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IRG/B/S/SL6B60KD
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Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 3.0A
ICE = 5.0A
ICE = 1 0A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 3.0A
ICE = 5.0A
ICE = 10A
0 5 10 15 20
VGE (V)
0
5
10
15
20
25
30
35
40
ICE (A)
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 3. 0A
ICE = 5.0A
ICE = 10A
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Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
050 100 150 200
RG (Ω)
0
50
100
150
200
250
Energy (µJ)
EON
EOFF
0 5 10 15 20
IC (A)
0
100
200
300
400
500
600
700
Energy (µJ)
EOFF
EON
0 5 10 15 20
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
050 100 150 200
RG (Ω)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
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Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C Fig. 18 - Typical Diode I RR vs. RG
TJ = 150°C; IF = 5.0A
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 5.0A; TJ = 150°C
050 100 150 200
RG (Ω)
0
4
8
12
16
20
IRR (A)
0200 400 600 800 1000
diF /dt (A/µs)
0
4
8
12
16
20
IRR (A)
0 200 400 600 800 1000
diF /dt (A /µs)
0
200
400
600
800
1000
1200
QRR (µC)
22Ω
47Ω
100 Ω
150Ω
10A
5.0A
3.0A
0 5 10 15 20
IF (A)
0
5
10
15
20
25
IRR (A)
RG = 22 Ω
RG =47 Ω
RG =100 Ω
RG =150 Ω
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Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 5.0A; L = 600µH
Fig. 22- Typ. Capacitance vs. V CE
VGE= 0V; f = 1MHz
110 100
VCE (V)
1
10
100
1000
Capacitance (pF)
Cies
Coes
Cres
0 5 10 15 20
Q G, Total Gate Charge (nC )
0
2
4
6
8
10
12
14
16
VGE (V)
300V
400V
0 5 10 15
IF (A)
50
100
150
200
250
300
Energy (µJ)
47Ω
22Ω
100 Ω
150 Ω
IRG/B/S/SL6B60KD
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Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1
t1 , Rectangular Pulse Dur ation (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Z thjc + T c
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
t1 , Rectangular Pulse Dur ati on (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Z thjc + T c
Ri (°C/W) τi (sec)
0.708 0.00022
0.447 0.00089
0.219 0.01037
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
1.194 0.000172
2.424 0.001517
0.753 0.080325
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
IRG/B/S/SL6B60KD
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
L
Rg
80 V DUT
480V
+
-
DC
Driver
DUT
360V
IRG/B/S/SL6B60KD
www.irf.com 11
-50
0
50
100
150
200
250
300
350
400
450
-0.20 0.30 0.80
time(µs)
V
CE
(V)
-1
0
1
2
3
4
5
6
7
8
9
I
CE
(A)
90% ICE
5% VCE
5% ICE
Eoff Loss
tf
-100
0
100
200
300
400
500
16.00 16.10 16.20 16.30 16.40
time (µs)
V
CE
(V)
-5
0
5
10
15
20
25
I
CE
(A)
TEST CURRENT
90% test current
5% VCE
10% te st current
t
r
E on Los s
-450
-400
-350
-300
-250
-200
-150
-100
-50
0
50
-0.06 0.04 0.14 0.24
time (µS)
V
F
(V)
-12
-10
-8
-6
-4
-2
0
2
4
6
8
I
F
(A)
Peak
IRR
tRR
QRR
10%
Peak
IRR
0
100
200
300
400
500
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V)
0
10
20
30
40
50
I
CE
(A)
VCE
ICE
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
IRG/B/S/SL6B60KD
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L EAD AS S I GN M E N TS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLIN E CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
EXAMPLE:THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IRG/B/S/SL6B60KD
www.irf.com 13
D2Pak Package Outline
D2Pak Part Marking Information
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
IRG/B/S/SL6B60KD
14 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
EXAMPLE:THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLY
PART NUMBER
DATE CODE
WEEK 19
LINE C
LOT CODE
YEAR 7 = 1997
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"LOGO
RECTIFIER
INTERNATIONAL
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
IRG/B/S/SL6B60KD
www.irf.com 15
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 1 6. 10 (.634)
15. 90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2. 362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOT E S :
1. COMFORMS T O EI A-418.
2. CONTROLLIN G DIMENS IO N: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
Notes:
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
TO-220 package is not recommended for Surface Mount Application
