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Plug N DriveTM Integrated Power
Module for Appliance Motor Drive
Features
• Integrated Gate Drivers and Bootstrap Diodes.
• Temperature Monitor
• Temperature and Overcurrent shutdown
• Fully Isolated Package.
• Low VCE (on) Non Punch Through IGBT
Technology
• Under-voltage lockout for all channels
• Matched propagation delay for all channels
• Low side IGBT emitter pins for current conrol
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
Description
International Rectifier's IRAMS10UP60A is an Integrated Power Module developed and optimized for elec-
tronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive
technology offers an extremely compact, high performance AC motor-driver in a single isolated package for
a very simple design.
A built-in temperature monitor and over-temperature/over-current protection, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation.
The integration of the bootstrap diodes for the high-side driver section, and the single polarity power
supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost
reduction advantages.
Absolute Maximum Ratings
PD-94640 RevI
IRAMS10UP60A
Series
10A, 600V
Parameter Description Max. Value Units
VCES Ma x imum IGBT Blo c king Vo lt a g e 600
V+Positive Bus Input Voltage 450
IO @ TC= 25°C RMS Phase Current 10
IO @TC =100°C RMS Phase Current 5
Ipk Ma x imum Pe a k P ha se C ur r e nt (t p < 1 0 0ms ) 15
FpMa x imum PW M C a r r ie r F r e q ue ncy 20 kHz
PdMaximum Power dissipation per Phase 20 W
Viso Isolation Voltage (1min) 2000 VRMS
TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150
TJ (Driver IC) Operating Junction temperature Range -40 to +150
T Mounting torque Range (M3 screw) 0.8 to 1.0 Nm
V
A
°C
• Recognized by UL (E252584), RoHS Compliant
IRAMS10UP60A
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Internal Electrical Schematic - IRAMS10UP60A
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
VRU (12)
VRW (14)
VRV (13)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
THERMISTOR
R3
VDD (22)
VSS (23)
R1
R2
C
Rg1 Rg3 Rg5
Driver IC
RT
LO1 16
LO3 14
LO2 15
Rg2
Rg4
Rg6
T/ITRIP (21)
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN1 (18)
LIN2 (19)
LIN3 (20)
V (10)+
IRAMS10UP60A
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Thermal Resistance
Inverter Section Electrical Characteristics @ TJ = 25°C
Inverter Section Switching Characteristics
Symbol Parameter Min Typ Max Units
Eon Turn-On Switching Loss --- 200 235
Eoff Turn-Off Switching Loss --- 75 100
Etot Total Switching Loss --- 275 335 TJ=25°C
Eon Turn-on Swtiching Loss --- 300 360 TJ=150°C
Eoff Turn-off Switching Loss --- 135 165
Etot Total Switching Loss --- 435 525
Erec Diode Reverse Recovery
energy --- 30 40 µJ
trr Diode Reverse Recovery time --- 100 145 ns
RBSOA Reverse Bias Safe Operating
Area
SCSOA Short Circuit Safe Operating
Area 10 --- --- µs
FULL SQUARE
TJ=150°C, IC=5A, VP=600V
V+=480V, VDD=+15V to 0V
See CT3
Conditions
IC=5A, V+=400V
VDD=15V, L=1mH
See CT1
Energy losses include "tail" and
diode reverse recovery
TJ=150°C, VP=600V,
V+=360V,
VDD=+15V to 0V See CT2
µJ
µJ
TJ=150°C, V+ =400V VDD=15V,
IF=5A, L=1mH
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C)
Junction to case thermal
resistance, each IGBT under
inverter operation.
--- 4.2 4.7 °C/W
Rth(J-C)
Junction to case thermal
resistance, each Diode under
inverter operation.
--- 5.5 6.5 °C/W
Rth(C- S)
Thermal Resistance case to
sink --- 0.1 --- °C/W
Flat,
g
reased surface.
Heatsink compound thermal
conductivity - 1W/mK
Symbol Parameter Min Typ Max Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V VIN=0V, IC=20µA
∆V(BR)CES / ∆TTemperature Coeff. Of
Breakdown Voltage --- 0.57 --- V/°C VIN=0V, IC=1.0mA
(25°C - 150°C)
--- 1.7 2.0 IC=5A TJ=25°C, VDD=15V
--- 2.0 2.4 IC=5A TJ=150°C
--- 5 15 VIN=5V, V+=600V
--- 10 40 VIN=5V, V+=600V, TJ=150°C
Ilk_module
Zero Gate Phase-to-Phase
Current -- -- 50 µAV
IN=5V, V+=600V
--- 1.8 2.35 IC=5A
--- 1.3 1.7 IC=5A, TJ=150°C
V
µA
V
VCE(ON)
ICES
VFM
Collector-to-Emitter Saturation
Voltage
Zero Gate Voltage Collector
Current-to-Emitter
Diode Forward Voltage Drop
IRAMS10UP60A
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Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased
at 15V differential (Note 1). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor to
VDD
Symbol Definition Min Max Units
VB1,2,3 High side floating supply voltage VS+12 VS+20
VS1,2,3 High side floating supply offset voltage Note 2 450
VDD Low side and logic fixed supply voltage 12 20
VITRIP T/ITRIP input voltage VSS VSS+5
VIN Logic input voltage LIN, HIN VSS VSS+5 V
V
V
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are appli-
cable to all six channels. (Note 1)
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substaines limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to (Note 1)
VSS
Symbol Definition Min Max Units
VS1,2,3 High Side offset voltage -0.3 600 V
VB1,2,3 High Side floating supply voltage -0.3 20 V
VDD Low Side and logic fixed supply voltage -0.3 20 V
VIN Input voltage LIN, HIN, T/ITRIP -0.3 7 V
TJJuction Temperature -40 150 °C
Symbol Definition Min Typ Max Units
VIN,th+ Positive going input threshold 3.0 --- --- V
VIN,th- Negative going input threshold --- --- 0.8 V
IQBS Quiescent VBS supply current --- 70 120 µA
IQCC Quiscent VCC supply current --- 1.6 2.3 mA
ILK Offset Supply Leakage Current --- --- 50 µA
IIN+ Input bias current (OUT=LO) --- 100 220 µA
IIN+ Input bias current (OUT=HI) --- 200 300 µA
V(ITRIP)I
TRIP threshold Voltage (OUT=HI or OUT=LO) 3.85 4.3 4.75 V
11.4
---
V
V
V
10.9
0.2
10.4
---
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCC and VBS supply undervoltage
Negative going threshold
VCCUVH
VBSUVH
VCC and VBS supply undervoltage
Ilockout hysteresis
10.6 11.1 11.6
VCC and VBS supply undervoltage
Positive going threshold
IRAMS10UP60A
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Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V.
Thermistor Built-in IRAMS10UP60A
Internal NTC - Thermistor Characteristics
Note 1: For more details, see IR21365 data sheet
Note 2: Logic operational for Vs from V--5V to V-+600V. Logic stata held for VS from V--5V to V--VBS. (Please refer to
DT97-3 for more details)
Symbol Definition Min Typ Max Units
TON Input to output propagation turn-on delay time (see fig.11) - 470 - ns
TOFF Input to output propagation turn-off delay time (see fig. 11) - 615 - ns
DTDead Time - 300 - ns
I/TTrip T/ITrip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns
TFCLTRL Post ITrip to six switch to turn-off clear time (see fig. 2) - 9 - ms
Typ Units Conditions
R25 Resistance 100 +/- 5% kΩTC = 25°C
R125 Resistance 2.522 + 17.3 % /- 14.9% kΩTC = 125°C
BB-Constant (25-50°C) 4250 +/- 3% k R2 = R1e [B(1/T2 - 1/T1)]
-40 / 125 °C
1mW/°CT
C = 25°C
Parameter
Temperature Range
Typ. Dissipation constant
IR21365
12K
NTC
VCC (22)
T/ITRIP (21)
VSS (23)
4.3k
Dynamic Electrical Characteristics
VDD=VBS=VBIAS=15V, Io=1A, VD=9V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_th-
TA=25°C, unless otherwise specified
IRAMS10UP60A
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Figure1. Input/Output Timing Diagram
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
HO1,2,3
LO1,2,3
Itrip
U,V,W
LIN1,2,3
HIN1,2,3
Ho
Lo
U,V,W
IC
Driver
V+
Hin1,2,3
Lin1,2,3
(15,16,17)
(18,19,20)
(8,5,2)
Itrip U,V,W
001Vbus
0100
011X
1XXX
HIN1,2,3 LIN1,2,3
IRAMS10UP60A
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Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
Figure 2. T/ITrip Timing Waveform
T/Itrip
LIN1,2,3
HIN1,2,3
tfltclr
50%
50%
U,V,W
IRAMS10UP60A
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Module Pin-Out Description
Pin Name Description
1 VB3 High Side Floating Supply Voltage 3
2 W,VS3 Output 3 - High Side Floating Supply Offset Voltage
3nanone
4 VB2 High Side Floating Supply voltage 2
5 V,VS2 Output 2 - High Side Floating Supply Offset Voltage
6nanone
7 VB1 High Side Floating Supply voltage 1
8 U,VS1 Output 1 - High Side Floating Supply Offset Voltage
9nanone
10 V+ Positive Bus Input Voltage
11 na none
12 LE1 Low Side Emitter Connection - Phase 1
13 LE2 Low Side Emitter Connection - Phase 2
14 LE3 Low Side Emitter Connection - Phase 3
15 HIN1 Logic Input High Side Gate Driver - Phase 1
16 HIN2 Logic Input High Side Gate Driver - Phase 2
17 HIN3 Logic Input High Side Gate Driver - Phase 3
18 LIN1 Logic Input Low Side Gate Driver - Phase 1
19 LIN2 Logic Input Low Side Gate Driver - Phase 2
20 LIN3 Logic Input Low Side Gate Driver - Phase 3
21 T/Itrip Temperature Monitor and Shut-down Pin
22 VCC +15V Main Supply
23 VSS Negative Main Supply
IRAMS10UP60A
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Typical Application Connection IRAMS10UP60A
VDD(15 V)
T/ITRIP
VSS
3.3 V NTC
12k
5k
1m
CONTROLLER
3-ph AC
MOTOR
LINW
HINW
LINU
LINV
LeW
HINU
HINV
LeU
LeV
V+
VSU
VBU
VSV
VBV
VSW
VBW
Driver IC
DC BUS
CAPACITORS
PHASE LEG
CURRENT
SENSE
TEMP
SENSE
BOOT-STRAP
CAPACITORS
O/C
SENSE
(ACTIVE LOW)
10m
6.8K
10.2k
U
V
W
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
0.1
m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-
mance.
2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected be-
tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9.
4. Low inductance shunt resistors shuld be used for phase leg current sensing. Similarly, the length of the traces be-
tween pins 12, 13 and 14 to the corrisponding shunt resistors should be kept as small as possible.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in in-
verter.
IRAMS10UP60A
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Figure 3. Maximum sinusoidal phase current as function of switching frequency
VBUS=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6
Figure 4. Maximum sinusoidal phase current as function of modulation frequency
VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6
0
1
2
3
4
5
6
7
8
9
10
02468101214161820
PWM Switching Frequency (kHz)
Maximum RMS Output Current/Phase (A) .
Tc=100°C
Tc=110°C
Tc=120°C
0
1
2
3
4
5
6
7
110100
Motor Current Modulation Frequency (Hz)
Maximum RMS Phase Current (A) .
12 kHz
16 kHz
20 kHz
Switching Frequency:
IRAMS10UP60A
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Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=400V
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, VBUS=400V
-1
0
1
2
3
4
5
6
7
8
9
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Time (µs)
Current (A)
-50
0
50
100
150
200
250
300
350
400
450
Voltage (V)
Current
Volta
g
e
-1
0
1
2
3
4
5
6
7
8
9
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Time (µs)
Current (A)
-50
0
50
100
150
200
250
300
350
400
450
Voltage (V)
Current
Volta
g
e
IRAMS10UP60A
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Figure 7. Variation of thermistor resistance with temperature
Figure 8. Variation of temperature sense voltage with thermistor tempera-
ture using external bias resistance of 4.3KΩ, VCC=15V
1
10
100
1000
0 20 40 60 80 100 120 140
Temperature (°C)
Thermistor Resistance (k_Ω)
Minimum
Nominal
Maximum
0
1
2
3
4
0 20 40 60 80 100 120 140
Thermis t or Te mp e ra t u r e (°C )
V sense (V) .
Maximum
Nominal
Minimum
IRAMS10UP60A
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Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching
Frequency
Figure 9. Estimated maximum IGBT junction temperature with thermistor
temperature
2.2
4.7
15
0
2.5
5
7.5
10
12.5
15
17.5
20
0 1.5 3 4.5 6 7.5 9 10.51213.51516.51819.5
Switching Frequency (kHz)
Capacitance (µF)
6.8
3.3
5101520
60
80
100
120
140
160
180
80 90 100 110 120 130 140 150
Thermistor Temperature (°C)
IGBT Junction Temperature (°C) .
IRAMS10UP60A
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Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output propaga-
tion turn-on delay time
Figure 11b. Input to Output
propagation turn-off delay timet
Figure 11c. Diode Reverse Recovery
VCE
IF
HIN/LIN
trr
Irr
VCE IC
HIN/LIN
TON tr
50%
HIN/LIN
90% IC
10% IC
50%
HIN/LIN
VCE
IC
HIN/LIN
TOFF tf
90% IC
10% IC
10%
VCE
IRAMS10UP60A
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Figure CT1. Switching Loss Circuit
Figure CT2. S.C.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
Vbus
Lin1,2,3
5V
Hin1,2,3
IN
Io
PWM=4µs
Ho
Lo
U,V,W
IC
Driver
Vbus
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
Figure CT3. R.B.SOA Circuit
IN
Io
Ho
Lo
U,V,W
IC
Driver
Vbus
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
VP=Peak Voltage on the IGBT die
VP=Peak Voltage on the IGBT die
IRAMS10UP60A
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Package Outline IRAMS10UP60A
note2
㻝㻞㻟
P 4DB00
䐟
䐡
䐠
note4
note5
missing pin : 3,6,9,11
IRAMS10UP60A
note3
note1: Unit Tolerance is +0.5mm,
䚷䚷䚷 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
IRAMS10UP60A
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Package Outline IRAMS10UP60A-2
㻝㻞㻟
䐠
䐟
䐡
note2
P 4DB00
note4
missing pin : 3,6,9,11
IRAMS10UP60A-2
note3 note5
note1: Unit Tolerance is +0.5mm,
䚷䚷䚷
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷
Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
2012-12-19
