UTC BT169 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R301-015,A
SCRs
DESCRIPTION
Passivated, sensitive gate thyristors in a plastic
envelope, intended for use in general purpose
switching and phase control applications. These
devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
TO-92
1
1:CATHODE 2:GATE 3:ANODE
QUICK REFERENCE DATA
BT169B BT169D BT169E BT169G UNIT
PARAMETER SYMBOL
MAX MAX MAX MAX MAX
Repetitive peak off-state voltages VDRM, VRRM 200 400 500 600 V
Average on-state current IT(AV) 0.5 0.5 0.5 0.5 A
RMS on-state current IT(RMS) 0.8 0.8 0.8 0.8 A
Non-repetitive peak on-state current ITSM 8 8 8 8 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Repetitive peak off-state voltages
BT169B
BT169D
BT169E
BT169G
VDRM,VRRM
200*
400*
500*
600*
V
Average on-state current
(Half sine wave, Tlead≦83°C) IT(AV) 0.5 A
RMS on-state current
(All conduction angles) IT(RMS) 0.8
A
Non-repetitive peak on-state current
(half sine wave, Tj=25°C prior to surge)
t=10ms
t=8.3ms
ITSM
8
9
A
I2t for fusing (t=10ms) I2t 0.32 A2S
Repetitive rate of rise of on-state current after triggering
(ITM=2A,IG=10mA, dIG/dt=100mA/µs) dIT/dt 50 A/µs
UTC BT169 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R301-015,A
PARAMETER SYMBOL RATINGS UNIT
Peak gate current IGM 1 A
Peak gate voltage VGM 5 V
Peak reverse gate voltage VRGM 5 V
Peak gate power PGM 2 W
Average gate power (Over any 20 ms period) PG(AV) 0.1 W
Storage temperature Tstg -40~150 °C
Operating junction temperature Tj 125 °C
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15A/µs.
THERMAL RESISTANCES
PARAMETER SYMBOL MIN TYP MAX UNIT
Thermal resistance junction to lead Rth j-lead 60 K/W
Thermal resistance junction to ambient
(pcb mounted, lead length=4mm) Rth j-a 150 K/W
STATIC ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)
PARAMETER SYMBOL TSET CONDITIONS MIN TYP MAX UNIT
Gate trigger current IGT VD=12V, IT=10 mA, gate open circuit 25 55 µA
Latching current IL VD=12V, IGT=0.5mA, RGK=1kΩ 2 6 mA
Holding current IH VD=12V,IGT=0.5mA, RGK=1kΩ 2 5 mA
On-state voltage VT IT=1A 1.2 1.35 V
Gate trigger voltage VGT VD=12V, IT=10mA, gate open circuit
VD=VDRM(max), IT=10mA , Tj=125°C,
gate open circuit
0.2
0.5
0.3
0.8
V
Off-state leakage current ID,IR VD=VDRM(max), VR=VRRM(max),
Tj=125°C, RGK=1kΩ
0.05 0.1 mA
DYNAMIC ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)
PARAMETER SYMBOL TSET CONDITIONS MIN TYP MAX UNIT
Ciritical rate of rise of off-state
voltage
dVD/dt VDM=67% VDRM(max), Tj=125°C,
exponential waveform, RGK=1kΩ
500 800 V/µs
Gate controlled turn-on time tgt ITM=2A,VD=VDRM(max), IG=10mA,
dIG/dt=0.1A/µs
2 µs
Circuit commutated turn-off
time
tq VD=67% VDRM(max), Tj=125°C,
ITM=1.6A,VR=35V, dITM/dt=30A/µs,
VD/dt=2V/µs, RGK=1kΩ
100 µs
UTC BT169 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R301-015,A
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8 conduction
angle
degrees
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
4
2.8
2.2
1.9
Tc(max) / C
IF(AV) / A
FIG.1 Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where a=form
factor=IT(RMS) / IT(AV)
Ptot / W
α=1.57
119
125
113
107
101
95
89
83
77
α
1
0
2
4
Number of half cycles at 50Hz
FIG.4 Maximnum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50Hz.
ITSM / A
10 100 1000
6
8
10 ITSMIT
time
Tj initial=25°C max
T
10µs
1
10
100
1000
T / s
ITSM / A
100µs 1ms 10ms
FIG.2 Maximum permissible non-repetitive peak on-
state current ITSM,versus pulse width tp,for
sinusoidal currents, tp≦10ms.
ITSMIT
time
Tj initial=25°C max
T
0.01
0
0.5
1.0
surge duration / s
FIG.5 Maximum permissible repetitive rms on-
state current IT(RMS), versus surge duration, for
sinusoidal currents, f= 50Hz; Tlead≦83°C
IT(RMS) / A
0.1 1.0 10
1.5
2.0
050 100 150
0.2
0.4
0.6
0.8
1.0
Tlead / C
FIG.3 Maximum permissible rms current IT(RMS),
versus lead temperature, Tlead
IT(RMS) / A
-50 0
83°C
0.4 50 100 150
0.6
0.8
1.0
1.4
1.6
Tj / C
FIG.6 Normalised gate trigger voltage VGT(Tj)/
VGT(25°C), versus junction temperature Tj
VGT(Tj)
VGT(25°C)
-50 0
1.2
UTC BT169 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 4
QW-R301-015,A
050 100 150
0.5
1.0
1.5
2.5
3.0
Tj / C
FIG.7 Normalised gate trigger current IGT(Tj)/
IGT(25°C), versus junction temperature Tj
IGT(Tj)
VGT(25°C)
-50 0
2.0
0
1.0 1.5 2.0
VT / V
FIG.10 Typical and maximum
on-state characteristic.
IT / A
00.5
1
2
3
4
5Tj=125°C - - -
Tj= 25°C
Vo=1.067V
Rs=0.187Ω
typ max
2.5
50 100 150
Tj / C
FIG.8 Normalised latching current IL(Tj)/IL(25°C),
versus junction temperature Tj, RGK= 1KΩ
IL(Tj)
IL(25°C)
-50 0
0
0.5
1.0
1.5
2.5
3.0
2.0
10us
0.01
0.1
1
tp / s
FIG.11 Transient thermal impedance Zth j-lead,
versus pulse width tp.
Zth j-lead (K/W)
1ms 0.1s 10s
10
100
0.1ms 10ms 1s
tp
PD
t
50 100 150
Tj / C
FIG.9 Normalised holding current IH(Tj)/IH(25°C),
versus junction temperature Tj, RGK=1KΩ
IH(Tj)
IH(25°C)
-50 0
0
0.5
1.0
1.5
2.5
3.0
2.0
1100 150
10
1000
Tj / C
FIG.12 Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
dVD/dt(V/us)
050
100
RGK=1KΩ
UTC BT169 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 5
QW-R301-015,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
