TVS Diode Array (SPA ® Diodes)
General Purpose ESD Protection - AQ24CANFD
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: JC.01/05/21
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any
other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
PPk Peak Pulse Power (tp=8/20μs) 200 W
IPP Peak Pulse Current (tp=8/20μs) 3.0 A
TOP Operating Temperature -40 to 150 °C
TSTOR Storage Temperature -55 to 150 °C
Electrical Characteristics (TOP=25ºC)
Parameter Symbol Test Conditions Min Ty p Max Units
Reverse Standoff Voltage VRWM IR=1μA, Pin1 or Pin2 to Pin3 24.0 V
Breakdown Voltage VBR IR=1mA, Pin1 or Pin2 to Pin3 26.7 28.0 V
Reverse Leakage Current ILEAK VR=24V 0.02 0.5 μA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 32.7 40.0 V
IPP=3A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 41.2 50.0 V
Dynamic Resistance2RDYN TLP, tp=100ns, I/O to GND 0.5 Ω
ESD Withstand Voltage1VESD
IEC 61000-4-2 (Contact Discharge) ±21 kV
IEC 61000-4-2 (Air Discharge) ±21 kV
Diode Capacitance1CI/O-GND
Reverse Bias=0V, f=1MHz;
Pin 1 or Pin2 to Pin 3 11. 5 14.0 pF
8/20μs Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
Note:
1 Parameter is guaranteed by design and/or component characterization.
2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
Clamping Voltage vs IPP
0
10
20
30
40
50
11.5 22.5 3
Clamp Voltage (V
C
)
Peak Pulse Current
-I
PP (A)