DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * * * * * Low On-Resistance * 25m @ VGS = 4.5V * 29m @ VGS = 2.5V * 36m @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability * * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Drain D Gate Gate Protection Diode ESD PROTECTED TO 2kV Source Internal Schematic Top View S G Top View Ordering Information (Note 3) Part Number DMG6968U-7 DMG6968UQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. YM Marking Information 2N4 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMG6968U Document number: DS31738 Rev. 5 - 2 Mar 3 2N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D December 2011 (c) Diodes Incorporated DMG6968U Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Steady State Units V V IDM Value 20 12 6.5 5.2 30 Symbol PD RJA TJ, TSTG Value 1.3 157 -55 to +150 Unit W C/W C TA = 25C TA = 70C ID Pulsed Drain Current A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: TJ = 25C Symbol Min Typ Max Unit BVDSS IDSS IGSS BVSGS 20 12 - 1.0 10 - V A A V VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 10V, VDS = 0V VDS = 0V, IG = 250A VGS(th) 0.5 m |Yfs| 0.9 25 29 36 V RDS (ON) 21 23 28 8 VDS = VGS, ID = 250A VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 10V, ID = 5A Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf 151 91 32 8.5 1.6 2.8 54 66 613 205 pF pF pF nC nC nC ns ns ns ns S Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10, RG = 6, ID = 1A 4. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate. 5. Short duration pulse test used to minimize self-heating effect. DMG6968U Document number: DS31738 Rev. 5 - 2 2 of 6 www.diodes.com December 2011 (c) Diodes Incorporated DMG6968U 20 20 VGS = 10V VGS = 4.5V 16 16 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 2.5V VGS = 2.0V 12 12 VGS = 1.5V 8 4 8 TA = 150C 4 T A = 125C TA = 85C TA = 25C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = 1.8V 0.03 VGS = 2.5V VGS = 4.5V 0.02 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.06 VGS = 4.5V 0.05 0.04 TA = 150C TA = 125C 0.03 TA = 85C T A = 25C 0.02 TA = -55C 0.01 0 0 30 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 0.06 VGS = 2.5V ID = 5.5A 1.4 0.05 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = -55C 0 0.5 VGS = 4.5V ID = 6.5A 1.2 1.0 0.8 0.04 VGS = 2.5V ID = 5.5A 0.03 VGS = 4.5V ID = 6.5A 0.02 0.01 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMG6968U Document number: DS31738 Rev. 5 - 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com December 2011 (c) Diodes Incorporated DMG6968U 20 1.2 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 12 ID = 250A 0.8 0.6 0.4 T A = 25C ID = 1mA 8 4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 500 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100,000 IDSS, LEAKAGE CURRENT (nA) 450 C, CAPACITANCE (pF) 400 350 300 250 200 Ciss 150 100 10,000 TA = 150C TA = 125C 1,000 Coss 100 TA = 85C 10 TA = -55C 50 Crss 0 0 TA = 25C 1 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 162C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.000001 0.00001 DMG6968U Document number: DS31738 Rev. 5 - 2 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 December 2011 (c) Diodes Incorporated DMG6968U Package Outline Dimensions A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Y Z C X DMG6968U Document number: DS31738 Rev. 5 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com December 2011 (c) Diodes Incorporated DMG6968U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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