TEXAS INSTR {OPTO} b2 DE ff ade1726 0034732 9 i [ ase | BS61726 TEXAS INSTR COPTO) 62C 36732 D | a SERIES TIC236, TIC246 SILICON TRIACS 7-257 S REVISED OCTOBER 1984 | - High-Current Triacs 100 V to 800 V 12 Aand 16 ARMS 100 A and 125 A Peak Current Max IgT of 50 mA (Quadrants 1-3} device schematic , , TO-220AB PACKAGE MT 2 perce cccttt ' { . ' TERMINAL 2 { MAIN TERMINAL 1 J GATE , j MAIN | | | t i MAIN TERMINAL 2 [S IN ELECTRICAL ' CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) SUFFIX TIC236 | TIC246 A 1 B Repetitive peak off-state voltage, VpRry (see Note 1} a @ 2 5 Oo o = : on-state Current at case temperature i on-state surge current, gate current, case temperature range temperature range mm case NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1, 2. This value applies for 60-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 300 mA/C for Series TIC 236 and 400 mA/C for Series TIC 246. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or balow) rated values of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. : TEXAS we 4-43 INSTRUMENTS t POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR {LOPTO} teentte, j | Gd SIL S9DIAD B5617265 TEXAS INSTR (OPTO) SERIES TIC236, TIC246 . SILICON TRIACS be 62C 36733 f electrical characteristics at 25C case temperature (unless otherwise noted) D T2505 SERIES SERIES PARAMETER TEST CONDITIONS FIC236 TIC246 UNIT MIN TYP MAX|MIN TYP MAX Repetitive Peak VoRM = Rated VpRM Ig = 9, 2 &2) mA IDRM Off-State Current Te = 110C = t = Vsupply = +12Vt, R, = 102, 5 60 5 50 twig) # 204s = t = . Vsupply = +72V", RL = 102, -411 60 11-60 lotm Peak Gate twig) # 20 ys * mA Trigger Current = t = 102, Veupply =~ 12V", AL = 10 -20 -50 -20 ~50 twig) # 20us =e t = Vsupply 12v%, RL = 102, 28 28 twig) 204s = t = Veupply = +12V1, RL = 102, 07 2 07 9 twig) > 20 us = t = Vsupply = + 12Vt, RL = 102, -o8 -2 oe 2 Verm Peak Gate twig) # 20 ps Vv . Trigger Voltage Vv, = 12Vvt, R, = 10, supply = 4 L= 10 -08 ~-2 08 ~2 twig) 20s == t = Veupply = ~12V0, AL = 102, 08 2 09 2 twig) # 20 us ity = 174, Ig = 100mA, VIM Peak On-State See Note 4 #15 21 Vv Voltage It = 22.54, Ig = 100 mA, 14 1,7 See Note 4 = Tt = ising Im = 100mA 2 40] 12 40 I Holding Current _ 9 7 5 mA Vsupply = Ig =0, - - -12 - initiating (Ty = 100mA 12 40 12-40 = t . 1 Latching Current | _Vsupply = +12V". See Note & 80 80 mA Veupply = - 12, See Note 5 80 80 Critical Rate of Rise Vp = Rated Vp Ig = 0, 4 dvidt Cr off-State Voltage To = 110C . 400 90 Vins Critical Rise of Vr = Rated Vp Tc = 80C dt! ' 1.2 1.2 2 vi dvidt(e) Commutation Voltage difdt = O.6IT(IRMS)/ms IT = 1.4ITiRMS) 2 {us ya Critical Rate of Rise Vp = Rated Vp, let = 50mA, dit of On-State Current dig/dt = 50 mA/us Tc = 110C, 200 200 Alnus T All voltages are with respect to Main Terminal 1, This parameter must be measured using pulse techniques, ty < 1 ms, duty cycle < 2%, Voltage-sensing contacts, separate from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: Rg = 1009, ty = 20yus, t; <15 ns, t<15ns, f = 1 kHz. NOTES: 4. 5. thermal characteristics PARAMETER SERIES TIC236 TiC246 4-44 TEXAS INSTRUMENTS wy POST OFFICE BOX 225012 DALLAS, TEXAS 75265 ve &9b172b 0036733 1283TEXAS INSTR LOPTO} 1283 be Def BAbl7db OOSb7S4 2 I aa B961726 TEXAS INSTR COPTO) 4 62C 36734 D -= ra pb o a = a oO Oo oO IGT Gate Trigger Current mA = a 3 0.1 SERIES TIC236, TIC246 SILICON TRIACS T2575 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs. CASE TEMPERATURE Veupply |GTM + + + Vaatti2zv RL=102 tw(g) = 20 as -40 20 0 20 40 60 80 100 Te Case Temperature C FIGURE 1 GATE TRIGGER VOLTAGE vs CASE TEMPERATURE o 2 > 3 2 a : Q 3 = B E z oO I Vsupply |GTM & + . Vaa=t12V > + RL= 102 ty (g) = 20 us -40 -20 QO 20 40 60 80 100 To Case Temperature c FIGURE 2 i . TEXAS i . 4-45 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 7TEXAS INSTR {OPTO} bo DE fp a961726 qoab735 4 T STITT ES TEXAS INSTR (COPTO - pe us ? a 62 36735. oY SERIES TIC236, TIC246 7-25-15" | SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs . CASE TEMPERATURE Iq Holding Current mA Vaa=t12V Ig=0 initiating IT) = 100 mA 01 r -40 -20 O 20 #40. 60 80 100 Tc Case Temperature C FIGURE 3 GATE FORWARD VOLTAGE vs . GATE FORWARD CURRENT < 10 S891A0Qg DIL 0.4 0.1 ta=0 0.04 To = 25C VoGE Gate Forward Current A 1 0.01 10-4 10-3 10-2 10-1 100 igf Gate Forward Current A FIGURE4 , 1 wa 4-46 . TEXAS - INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 . wee we ee eee - - x - wees gee wines wot ee eeeTEXAS INSTR {0PTO} be DE ff 696724 OO03673b & Tr So6T726 TEXAS INSTR COPTO) 62C 36736 o | : SERIES TIC236, TIC246 SILICON TRIACS T-25-([S TYPICAL CHARACTERISTICS . LATCHING CURRENT vs CASE TEMPERATURE Vsupp + ty 'GT + t iL Latching Current - mA Vaazti2Vv -40 -20 oO 20 40 60 80 = 8 100 Tc Case Tamparature C FIGURE 5 eo | @ i 2 > @ a | Oo a , Af TEXAS % 4-47 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 | we ee wr ee ere ee