Document Number: 60066
Revision 24-Feb-06
www.vishay.com
150
TA 33
Vishay Sfernice
VISHAY THIN FILM • FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31 • GERMANY +49.9287.710 FAX: +49 9287.70435 • ISRAEL +972.3.557.0945 FAX: +972.3.558.9121
• ITALY + 39.2.300.11919 FAX: +39.2.300.11999 • JAPAN +81.42.729.0661 FAX: +81.42.729.3400 • SINGAPORE +65.788.6668 FAX: +65.788.0988
• SWEDEN +46.8.594.70590 FAX: +46.8.594.70581 • UK +44 191 514 8237 FAX: +44 1953 457 722 • USA: (610) 407-4800 FAX: (610) 640-9081
Dual Value, Chip Resistor Center Tap
Actual Size
SCHEMATIC
These tantalum chips combine excellent stability 0.07 %
(2000 hours, rated power at 70 °C) with great power han-
dling capacity. Two bonding pads per termination allow
greater flexibility in hybrid layout design.
RT
R1R2
RT = R1 + R2 with R1 = R2 Standard
FEATURES
Center tap feature
Resistor material: self - passivating
Tantalum Nitride
Silicon substrate for good power dissipation
Low cost
TEST SPECIFICATIONS CONDITIONS
MATERIAL TANTALUM NITRIDE
Resistance Range 50 ohms to 500 Kohms for RT = R1 + R2
TCR: Tracking ± 5 ppm/°C
-
55 °C to + 155 °C
Absolute ± 100 ppm/°C (± 50 ppm/°C on Request)
-
55 °C to + 155 °C
Tolerance: Ratio 1/1 standard
Absolute ± 0.5 %, ± 1 %, ± 2 %
Matching ± 0.5 % Standard
Power Dissipation 250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C
Stability ± 0.07 % typical, ± 0.1 Max. 2000 hrs. at +70 °C under Pn
Working Voltage 50 Volts DC on RT
Operating Temperature Range
-
55 °C to + 155 °C
Storage Temperature Range
-
55 °C to + 155 °C
Noise <
-
35 dB typical MIL-STD-202 Method 308
Thermal EMF 0.01 µV/°C
Shelf Life Stability 100 ppm 1 year at + 25 °C
STANDARD ELECTRICAL SPECIFICATIONS
ABS TRACKING
TCR 100 ppm/°C 5 ppm/°C
ABS RATIO
TOL 0.5 % 0.5 %
TYPICAL PERFORMANCE
RoHS
COMPLIANT
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151
TA 33
Vishay Sfernice
Document Number: 60066
Revision 24-Feb-06
VISHAY THIN FILM • FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31 • GERMANY +49.9287.710 FAX: +49 9287.70435 • ISRAEL +972.3.557.0945 FAX: +972.3.558.9121
• ITALY + 39.2.300.11919 FAX: +39.2.300.11999 • JAPAN +81.42.729.0661 FAX: +81.42.729.3400 • SINGAPORE +65.788.6668 FAX: +65.788.0988
• SWEDEN +46.8.594.70590 FAX: +46.8.594.70581 • UK +44 191 514 8237 FAX: +44 1953 457 722 • USA: (610) 407-4800 FAX: (610) 640-9081
DIMENSIONS in inches and millimeters
D
E
F
Bonding Pad Area
A
B
C
Dual Value, Chip Resistor Center Tap
Resistive Element Tantalum Nitride
Substrate Material Silicon
Passivation Autopassivation
Bonding Pads Aluminium
MECHANICAL SPECIFICATIONS
DIMENSION INCHES MILLIMETERS
A 0.03 ± 0.004 0.76 ± 0.10
B 0.03 ± 0.004 0.76 ± 0.10
C 0.01 to 0.015 0.25 to 0.40
D 0.004 0.10
E 0.006 0.15
F 0.006 0.15
SPECIAL
D = ± 0.5 %
F = ± 1.0 %
G = ± 2.0 %
GLOBAL PART NUMBER INFORMATION
New Global Part Numbering: TA33-100KF1MD0016
Historical Part Number example: TA 33 5K2 25K 1 % 0.5 % R0016
TA335K
2
KF25D0
Decimal
R, K or M
-
GLOBAL MODEL R1 VALUE ABS. TOLERANCE
01 6
RAT TOL
D = ± 0.5 %
R2 VALUE
Decimal
R, K or M
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
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