©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
BF256A/BF256B/BF256C
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V
VGS Gate-So urce Voltage -30 V
IGF Forward Gate Current 10 mA
PDTotal Device Dissipation @TA=25°C
Derate above 25°C350
2.8 mW
mW/°C
TSTG Operating and storage Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Co ndition Min. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1µA-30V
VGS Gate-Source VDS = 15V, ID = 200µA -0.5 -7.5 V
VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 10nA -0.5 -8 V
IGSS Gate Reverse Current VGS = -20V, VGS = 0 -5 nA
On Characteristics
IDSS Zero-Gate Voltage Drain Current
BF256A
BF256B
BF256C
VGS = 15V, VGS = 0 3
6
11
7
13
18
mA
Small Signal Characteristics
gfs Common Source Forward Transconductance VDS = 15V, VGS = 0, f = 1KHz 4.5 mmhos
BF256A/BF256B/BF256C
N-Channel RF Amplifiers
This device is designed for VHF/UHF amplifiers.
Sourced from process 50.
TO-92
1. Gate 2. Source 3. Drain
1
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
BF256A/BF256B/BF256C
Package Dimensions
Dimensions in Millimeters
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2003 Fairchild Semiconductor Corporation Rev. I2
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