© 2010 IXYS CORPORATION, All Rights Reserved DS100249(03/10)
VDSS = 500V
ID25 = 52A
RDS(on) ≤≤
≤≤
≤ 120mΩΩ
ΩΩ
Ω
trr(typ) = 400ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C52A
IDM TC= 25°C, Pulse Width Limited by TJM 150 A
IATC= 25°C52A
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 10 V/ns
PD TC= 25°C 960 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 5.5 g
IXTQ480P2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS= 0V 5 μA
TJ = 125°C 50 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 120 mΩ
PolarP2TM
Power MOSFET
Features
zAvalanche Rated
zFast Intrinsic Diode
zDynamic dv/dt Rated
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
Advance Technical Information
G = Gate D = Drain
S = Source Tab = Drain
TO-3P
G
DSTab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTQ480P2
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 30 48 S
Ciss 6800 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 680 pF
Crss 44 pF
td(on) 22 ns
tr 11 ns
td(off) 40 ns
tf 8 ns
Qg(on) 108 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 37 nC
Qgd 38 nC
RthJC 0.13 °C/W
RthCS 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 52 A
ISM Repetitive, Pulse Width Limited by TJM 204 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 400 ns
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IF = 26A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
