To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MPSH11/MMBTH11, Rev. B
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 µA to
10 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Colle ctor-Emit t er Voltage 25 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
ICCollector Current - Continuous 50 mA
TJ, Tst
g
Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH11 *MMBTH11
PDTotal Device Dissipatio n
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resista nce, Junction t o Case 125 °C/W
RθJA Thermal Re sistance, Junction to Ambient 357 556 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MPSH11
CEBTO-92
MMBTH11
C
B
E
SOT-23
Mark: 3G
2002 Fairchild Semiconductor Corporation
MPSH11 / MMBTH11
3
MPSH11/MMBTH11, Rev. B
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(
BR
)
CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V
ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA
IEBO Emitter Cutoff Curren t VEB = 2.0 V, IC = 0 100 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 4.0 mA, VCE = 10 V 60
VCE(sat)Collector-Emitter Saturation Volta g e IC = 4.0 mA, IB = 0.4 mA 0.5 V
VBE(on)Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V 0.95 V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
fTCurrent Gain - Ba ndwidth Product IC = 4.0 mA, VCE = 10 V,
f = 100 MHz 650 MHz
Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Crb Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.6 0.9 pF
rb묬cCollector Base Time Constant IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz 9.0 pS
Typical Characteristics
NPN RF Transistor
(continued)
MPSH11 / MMBTH11
Co llecto r-Emi tter Satu r ation
Vo ltage vs C o llector Current
0.1 1 10 20 30
0.05
0.1
0.15
0.2
I - C OLLECTOR CU R RENT (mA )
V - COLLECTOR -EMI TTER VOLTA GE (V)
CESAT
C
β
ββ
β= 10
125 °C
- 40 °C
25
캜
캜캜
캜
DC Cur re nt Gai n
vs Col lector Cur rent
0.01 0.1 1 10 100
0
50
100
150
200
250
300
I - COLLE CTOR CURRENT (mA)
h - DC PULSED CURRE NT GAIN
FE
C
V = 5V
CE
125 °C
- 40 °C
25
캜
캜캜
캜
MPSH11/MMBTH11, Rev. B
Typical Characteristics (continued)
Ca pacitance vs
Reverse Bias Voltage
0.1 1 10 50
0
0.6
1.2
1.8
2.4
3
REVERSE BIAS VOLTAGE (V)
CAPAC ITANC E (pF)
f = 1 . 0 MHz
C
CB
C
ibo
Cont our s of Cons t ant Ga i n
Ban dw idt h Produc t ( f )
0.1 1 10 100
0.1
1
10
50
I - COLLECTOR CURRENT (mA)
V - CO LLEC TOR V OLTAGE (V)
CE
C
T = 25 C
A
T
º100 MHz
200 MHz
300 MHz 400 M Hz
500 M Hz
600 M Hz
700 M Hz
800 M Hz
900 M Hz
10 00 M Hz
Powe r Dissipation vs
Ambient Temp erat ure
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
SO T-2 3
TO-92
°
Co llector Cut-Off Cur rent
vs Amb ien t Te mperatur e
25 50 75 100 125 150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR C URRENT (nA)
A
V = 30V
CB
°
CBO
Base-Emitter Satu ration
Voltage vs Collector Current
0.1 1 10 20 30
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - B ASE-EMITTER VOLTAGE (V)
BESAT
125 °C
- 40 °C
25
캜
캜캜
캜
C
β
ββ
β= 10
B ase-Em itter ON Vo ltage vs
Colle c tor Curre nt
0.01 0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - B ASE-EMITTER ON VOLTAGE (V)
BE(O N)
C
V = 5.0V
CE
125 °C
- 40 °C
25
캜
캜캜
캜
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
3
MPSH11/MMBTH11, Rev. B
Common Emitter Y Parameters
Input Admittance vs
Coll ector Current
0 4 8 121620
0
2
4
6
8
10
12
14
I - C OLLECTOR CURRENT ( m A)
Y - INPUT ADM ITTANCE (mmhos)
ie
C
V = 1 5V
CE
f = 45 MHz
b
ie
g
ie
I nput Admi ttan ce vs
Collector Current
0246810
0
4
8
12
16
20
24
I - COLLECTOR CURRENT (mA)
Y - IN PUT ADMIT TANCE (mmhos )
ie
C
V = 10V
CE
f = 200 MH z
b
ie
g
ie
Input Admi ttance vs
Collecto r Vo lta g e
048121620
0
4
8
12
16
20
24
28
V - COLLECTOR VOLTAGE
Y - INPUT ADMIT TAN C E ( mmho s )
ie
CE
I = 7.0 m A
C
f = 200 MHz
b
ie
g
ie
I npu t Admittance vs
Frequency
50 100 200 500 1000
0
4
8
12
16
20
f - F RE QU ENCY (MH z )
Y - INPUT ADMIT TAN CE (mmho s )
ie
I = 7.0 mA
C
b
ie
g
ie
V = 15V
CE
Forward Transfer Admittance
vs Col lector Current
0 4 8 12 16 20 24
1
10
100
200
500
I - COLLECTOR CURRENT (mA)
Y -F O RWA RD TRANS ADMIT TAN C E ( mmhos )
fe
-b
fe
V = 15V
CE
C
f = 45 M Hz
g
fe
Forward Transfer Admittance
vs Collect or Cur ren t
0246810
0
20
40
60
80
100
120
I - COLLECTOR CURRENT (mA)
Y -FORWARD TRANS ADMITTANCE (mmhos)
fe
-b
fe
V = 10V
CE
C
f = 200 MH z
g
fe
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
MPSH11/MMBTH11, Rev. B
Common Emitter Y Parameters (continued)
Forward Transfer Admittance
v s Collect or Volta ge
048121620
0
20
40
60
80
100
120
140
V - COLLECTOR VOLTAGE (V)
Y - F ORWARD TR ANS ADM ITTANCE (m mhos )
fe
-b
fe
CE
g
fe
I = 7.0 mA
C
f = 4 5 MHz
Fo rw ard Tran sfer Admit tan ce
vs Frequen cy
50 100 200 500 1000
0
20
40
60
80
100
120
140
f - F RE QU ENC Y (MH z )
Y -FORWARD TR AN S ADM ITTANCE (mmho s)
fe
I = 7.0 mA
C
g
fe
V = 15V
CE
-b
fe
R everse T r ansfer Admittance
vs Co l lector Cu r ren t
0 4 8 12 16 20
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
I - COLLECTOR CURRENT (mA)
Y - REVERSE TRANS ADMI TTANCE ( mmhos)
re
-g
re
C
V = 15V
CE
f = 4 5 MHz
-b
re
R everse Transfer Admittance
vs Col lector Current
0246810
0
0.1
0.2
0.3
0.4
0.5
0.6
I - C OLLECTO R CURRENT ( m A)
Y -REVERS E TR AN S ADM ITTANCE (mmhos)
re
-g
re
C
V = 10V
CE
f = 200 MHz -b
re
R everse Transfer Admittance
vs Collector Voltage
0 2 4 6 8 10 12 14 16 18 20
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.36
0.4
V - CO LLEC TOR VO LTAGE ( V)
Y -REVERSE TRANS ADM ITTAN CE (mmhos)
re
-g
re
CE
-b
re
I = 7.0 mA
C
f = 45 MH z
R everse T ransfer Admittance
vs Frequency
50 100 200 500 1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
f - F REQU ENCY (MH z)
Y -REVERSE TRANS ADMITTANCE (mmhos)
re
-g
re
-b
re
I = 7.0 m A
C
V = 15V
CE
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
3
MPSH11/MMBTH11, Rev. B
Common Emitter Y Parameters (continued)
Outpu t Ad m ittan c e vs
Collecto r Cur r ent
0 4 8 12 16 20 24
1
10
100
1000
I - COLLECTOR CURRENT (mA)
Y - OUTPUT ADMITT ANCE (mmhos)
oe
C
V = 15V
CE
f = 45 MHz
b
oe
g
oe
Outpu t Admittance vs
Collector Current
0246810
0.1
0.2
0.5
1
2
5
I - C OLLECT OR CU RRE N T ( mA)
Y - OUTPUT ADMITTANCE (mmhos)
oe
C
V = 10 V
CE
f = 20 0 MHz b
oe
g
oe
Outpu t A d mittanc e v s
Collect or Vo l tag e
0 4 8 12 16 20 24
10
100
1000
10000
V - COLLEC TOR V OLTAGE (V)
Y - OUTPU T AD MITTA N CE ( mmhos)
oe
CE
b
oe
g
oe
I = 7 .0 mA
C
f = 45 MHz
Output Admit tance
vs Frequency
50 100 200 500 1000
10
100
1000
10000
f - F RE QU ENCY (MH z )
Y - OUTPUT ADMITTANCE (mmhos)
oe
I = 7.0 mA
C
V = 15V
CE
b
oe
g
oe
Power Gain and Noise Figure
vs Col lect or Current
0246810
0
5
10
15
20
25
30
35
I - COLLECTOR CURRENT (mA)
POWER GAIN AND NOISE FIGURE (dB)
C
V = 1 2V
CC
f = 20 0 MHz
NF
PG
FIG. 2
Con v ersion Gain
vs Col lect or Current
012345
18
20
22
24
26
28
I - C OLLECTOR CURRENT ( m A)
C - CONV ERSION GAIN (dB)
C
f = 45 MHz
IF
GE
f = 200 MHz
O
f = 245 MHz
LO
V = 1 5V
CE
FIG. 1
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
MPSH11/MMBTH11, Rev. B
Test Circuits
FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit
200 mHz Output into
50Ω
200 mHz
Input
VCC = 12 V
1000 pF
1000 pF
0.8-10 pF
RS
RL
100 pF
1000 pF
1000 pF
2.2 KΩΩ
ΩΩ
Ω
390 ΩΩ
ΩΩ
Ω
270 ΩΩ
ΩΩ
Ω
L1
L2
VBB
L1 - Ohmite Z-235 RFC
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1
1/2 turns from cold side
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
3
MPSH11/MMBTH11, Rev. B
Test Circuits (continued)
1000 pF 1000 pF
0.002 µµ
µµ
µF4.0-30 pF
1000 pF
VCC = 12 V
2.2 KΩΩ
ΩΩ
Ω
1/2 W
R.F. Beads
50 ΩΩ
ΩΩ
Ω
Input
50 ΩΩ
ΩΩ
Ω
Output
VAGC
390 ΩΩ
ΩΩ
Ω
1/2 W
2KΩΩ
ΩΩ
Ω
T1
270 ΩΩ
ΩΩ
Ω
1/2 W
T1 - Q3 T oroid 4:1 ratio
8 turns Pri. 2 turns Sec. }No. 22 wire
FIGURE 2: 45 MHz Power Gain Circuit
200 mHz Output into
50Ω
RFin
LOin
2.0 pF
300 pF
1000 pF
L1
47 KΩΩ
ΩΩ
Ω
245 mHz
Input into
50Ω
VCE
VBB
T1
1.1 pF 20pF
1000 pF
45 mHz Output
into 50Ω
VCE = 15 V
FIGURE 3: 200 MHz Conversion Gain T est Circuit
L1 - Ohmite RFC Z235
T1 - Primary 5 turns No. 34 wire 1/4 inch
diameter. Secondary runs No. 34 wire close
wound over a Q100 core (10.7 mHz). When
terminated on secondary side with 50Ω primary
measures 1.5 K, -25 pF.
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
