DATA SH EET
Product specification
Supersedes data of May 1992 1996 May 09
DISCRETE SEMICONDUCTORS
BLT80
UHF power transistor
1996 May 09 2
Philips Semiconductors Product specification
UHF power transistor BLT80
FEATURES
SMD encapsulation
Gold metallization ensures excellent reliability.
APPLICATIONS
Hand-held radio equipment in the 900 MHz
communication band.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223 SMD package.
PINNING - SOT223
PIN SYMBOL DESCRIPTION
1 e emitter
2 b base
3 e emitter
4 c collector Fig.1 Simplified outline and symbol.
handbook, halfpage
e
c
b
MAM043 - 1
4
123
Top view
QUICK REFERENCE DATA
RF performance at Ts60 °C in a common emitter test circuit (see Fig.7).
MODE OF OPERATION f
(MHz) VCE
(V) PL
(W) Gp
(dB) ηC
(%)
CW, class-B narrow band 900 7.5 0.8 660
1996 May 09 3
Philips Semiconductors Product specification
UHF power transistor BLT80
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
2. Transistor mounted on a printed-circuit board measuring 40 ×40 ×1 mm, collector pad 35 ×17 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 3V
I
Ccollector current (DC) 250 mA
IC(AV) average collector current 250 mA
ICM peak collector current f >1 MHz 750 mA
Ptot total power dissipation Ts= 131 °C; note 1 2W
T
stg storage temperature 65 +150 °C
Tjoperating junction temperature 175 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ptot =2W; T
s= 131 °C; note 1 22 K/W
Rth j-a thermal resistance from junction to ambient Ptot =2W; T
amb =25°C; note 2 85 K/W
Fig.2 DC SOAR.
Ts= 131 °C.
handbook, halfpage
102
101
1
11010
2
MRA780 - 1
IC
(A)
VCE (V)
1996 May 09 4
Philips Semiconductors Product specification
UHF power transistor BLT80
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. Measured under pulsed conditions: tp200 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)CBO collector-base breakdown voltage open emitter; IC= 2.5 mA 20 V
V(BR)CEO collector-emitter breakdown voltage open base; IC=5mA 10 V
V
(BR)EBO emitter-base breakdown voltage open collector; IE= 0.5 mA 3 V
ICES collector leakage current VCE = 10 V; VBE =0 0.1 mA
hFE DC current gain VCE =5V; I
C= 150 mA; note 1;
see Fig.3 25
Cccollector capacitance VCB = 7.5 V; IE=i
e= 0; f = 1 MHz;
see Fig.4 3.5 pF
Cre feedback capacitance VCE = 7.5 V; IC= 0; f = 1 MHz 2.5 pF
Fig.3 DC current gainas a function of collector
current; typical values.
VCE = 7.5 V; tp200 µs; δ≤0.02; Tj=25°C.
handbook, halfpage
0
20
40
60
80
100
0 200 400 600 800
MRA776
hFE
IC (mA)
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
IE=i
e= 0; f = 1 MHz; Tj=25°C.
handbook, halfpage
0
1
2
3
4
5
0 4 8 12 16 20
MRA773
Cc
(pF)
VCB (V)
1996 May 09 5
Philips Semiconductors Product specification
UHF power transistor BLT80
APPLICATION INFORMATION
RF performance at Ts60 °C in a common emitter test circuit (see note 1 and Fig.7).
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 9 V; PL= 0.8 W; Ts60 °C.
MODE OF OPERATION f
(MHz) VCE
(V) PL
(W) Gp
(dB) ηC
(%)
CW, class-B narrow band 900 7.5 0.8 660
typ. 8 typ. 67
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
Class-B; f = 900 MHz; VCE = 7.5 V; Ts60 °C.
handbook, halfpage
0
2
4
6
8
10
0
20
40
60
80
100
0 0.3 0.6 0.9 1.2 1.5
MRA774
Gp
ηC
ηC
(%)
Gp
(dB)
PL (W)
Fig.6 Load power as a function of drive
power; typical values.
Class-B; f = 900 MHz; VCE = 7.5 V; Ts60 °C.
handbook, halfpage
0
0.3
0.6
0.9
1.2
1.5
0 200 400 600
MRA779
PL
(W)
PD (mW)
1996 May 09 6
Philips Semiconductors Product specification
UHF power transistor BLT80
Test circuit information
List of components used in test circuit (see Figs 7 and 8)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr= 2.2); thickness
116"; thickness of the copper sheet 35 µm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C8 multilayer ceramic chip capacitor; note 1 100 pF
C2, C3 type 9105 Voltronix KM10 trimmer 0.6 to 10 pF
C4 multilayer ceramic chip capacitor; note 1 220 pF
C5, C7 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
C6 multilayer ceramic chip capacitor; note 1 1 nF
L1 stripline; note 2 50 length 13 mm
width 4.85 mm
L2, L7 1 turn 0.4 mm copper wire on
grade 3B core 4330 030 32221
L3, L8 6 turns enamelled 0.8 mm copper wire internal dia. 3 mm
L4, L9 grade 3B Ferroxcube wideband
HF choke 4312 020 36640
L5 stripline; note 2 50 length 8.4 mm
width 4.85 mm
L6 stripline; note 2 50 length 20 mm
width 4.85 mm
L10 stripline; note 2 50 length 21 mm
width 4.85 mm
R1, R2 metal film resistor 10 , 0.25 W
Fig.7 Common emitter test circuit for class-B operation at 900 MHz.
handbook, full pagewidth
MBB649
,,,
50
input 50
output
VCC
C6C4 R2
L9
L7
C8
L10
DUT
L3
L4
R1
C2
C1 L5
C7C3
L1
,,
C5
L6
,,
L2
,,,
L8
1996 May 09 7
Philips Semiconductors Product specification
UHF power transistor BLT80
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
handbook, full pagewidth
strap
strap
strap
strap
rivets
(14x)
mounting
screws
(8x)
140
80
MBB648
L9
C6
R2
L7 L10
C7C5
L6
L2
C4
R1
L4
C3C2
VCC
C8C1 L5
L1
L3 L8
1996 May 09 8
Philips Semiconductors Product specification
UHF power transistor BLT80
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Class-B; VCE = 7.5 V; PL= 0.8 W; Ts60 °C.
handbook, halfpage
0
2
4
6
8
10
800 840 880 920 960 1000
MRA777
f (MHz)
ri
xi
Zi
()
Fig.10 Load impedance as a function of frequency
(series components); typical values.
Class-B; VCE = 7.5 V; PL= 0.8 W; Ts60 °C.
handbook, halfpage
0
5
10
15
20
25
30
800 840 880 920 960 1000
f (MHz)
MRA778
ZL
(Ω) RL
XL
Fig.11 Power gain as a function of
frequency; typical values.
Class-B; VCE = 7.5 V; PL= 0.8 W; Ts60 °C.
handbook, halfpage
0
2
4
6
8
10
800 840 880 920 960 1000
f (MHz)
MRA775
Gp
(dB)
Fig.12 Definition of transistor impedance.
handbook, halfpage
MBA451
ZiZL
1996 May 09 9
Philips Semiconductors Product specification
UHF power transistor BLT80
PACKAGE OUTLINE
Fig.13 SOT223.
Dimensions in mm.
handbook, full pagewidth
6.7
6.3
0.95
0.85
2.3 0.80
0.60
4.6
3.1
2.9
3.7
3.3 7.3
6.7
A
B0.2 A
1.80
max
16
16o
max
10o
max
0.10
0.01
0.32
0.24
4
123
MSA035 - 1
(4x)
0.1 B
M
M
S seating plane 0.1 S
o
1996 May 09 10
Philips Semiconductors Product specification
UHF power transistor BLT80
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1996 May 09 11
Philips Semiconductors Product specification
UHF power transistor BLT80
NOTES
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SCDS48 © Philips Electronics N.V. 1996
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127061/1200/02/pp12 Date of release: 1996 May 09
Document order number: 9397 750 00836