TEMPFET BTS 129 Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 129 60 V 27 A 0.05 TO-220AB C67078-A5013-A2 2 3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 60 V Drain-gate voltage, RGS = 20 k VDGR 60 Gate-source peak voltage, aperiodic Vgs 20 Continuous drain current, TC = 25 C ID 27 ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V ID-ISO 7.5 A Pulsed drain current, TC = 25 C ID puls 108 Short circuit current, Tj = - 55 ... + 150 C ISC 80 Short circuit dissipation, Tj = - 55 ... + 150 C PSCmax 1200 Power dissipation Ptot 75 Operating and storage temperature range Tj, Tstg - 55 ... + 150 C DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55/150/56 Thermal resistance Chip-case Chip-ambient Semiconductor Group W K/W Rth JC Rth JA 1 1.67 75 04.97 BTS 129 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 C Tj = 150 C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C I GSS Drain-source on-state resistance VGS = 10 V, ID =17 A RDS(on) V 60 - - 2.5 3.0 3.5 A - - 1 100 10 300 - - 10 2 100 4 nA A - 0.04 0.05 8.0 13.0 18.0 Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 17 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss S pF 700 940 1250 - 500 750 - 180 270 Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t - 25 40 - 60 90 Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t - 100 130 - 75 95 r f Semiconductor Group 2 ns BTS 129 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS - - 27 Pulsed source current I SM - - 108 Diode forward on-voltage I F = 54 A, VGS = 0 VSD - 1.5 2.0 Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V t rr - 150 - Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Q rr A V ns C - 1.0 - 0.7 1.4 1.5 - - 10 Temperature Sensor Forward voltage ITS(on) = 10 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C VTS(on) Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C ITS(on) Holding current, VTS(off) = 5 V, Tj = 25 C Tj = 150 C IH Switching temperature VTS = 5 V TTS(on) Turn-off time VTS = 5 V, ITS(on) = 2 mA toff Semiconductor Group 3 V mA - - 10 - - 600 0.05 0.05 0.1 0.2 0.5 0.3 150 - - 0.5 - 2.5 C s BTS 129 Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 - Drain-source voltage VDS 15 30 - Gate-source voltage VGS 8.1 5.9 - Short-circuit current ISC 80 37 - A Short-circuit dissipation PSC 1200 1100 - W Response time Tj = 25 C, before short circuit tSC(off) 25 25 - Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... + 150 C Semiconductor Group ms Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C 4 V BTS 129 Typical output characteristics ID = f (VDS) Parameter: tp = 80 s 60 D SIT00562 BTS 129 Ptot = 75W A Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C VGS = 20V 10V 8V 9V 50 7.5V 40 7V 6.5V 30 6V 20 5.5V 5V 10 0 4.5V 4V 0 1 2 3 4 V 5 V DS Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS RDS(on) = f (Tj) Parameter: ID = 17 A, VGS = 10 V (spread) Semiconductor Group 5 BTS 129 Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Continuous drain current ID = f (TC) Parameter: VGS 10 V Semiconductor Group 6 BTS 129 Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Forward characteristics of reverse diode Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T IF = f (VSD) Parameter: Tj, tp = 80 s Semiconductor Group 7 BTS 129 Package Outlines TO 220 AB Standard 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-A5013-A2 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 8