BCR 142T
Sep-29-19991
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ, R2=47kΩ)
VPS05996
1
2
3
EHA07184
3
21
C
EB
R1
R2
Type Marking Pin Configuration Package
BCR 142T WZs 1 = B 2 = E 3 = C SC-75
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO V50
50
VCBO
Collector-base voltage
Emitter-base voltage 10
VEBO
Input on Voltage Vi(on) 30
100 mA
IC
DC collector current
Total power dissipation, TS = 115 °C Ptot mW250
Junction temperature Tj150 °C
-65 ... 150Storage temperature Tst
g
Thermal Resistance
Junction ambient 1) ≤ 300 K/W
RthJA
Junction - soldering point RthJS ≤ 165
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
BCR 142T
Sep-29-19992
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter ValuesSymbol Unit
typ. max.min.
DC Characteristics
- V50 -
V(BR)CEO
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
50 -
V(BR)CBO
Collector-base breakdown voltage
IC = 10 µA, IB = 0
-
-Collector cutoff current
VCB = 40 V, IE = 0
ICBO - 100 nA
- - µAEmitter cutoff current
VEB = 10 V, IC = 0
IEBO 227
70 - --DC current gain 1)
IC = 5 mA, VCE = 5 V
hFE
-
VCEsat - 0.3 VCollector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
0.5Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) - 1.2 V
0.8 -Input on Voltage
IC = 2 mA, VCE = 0.3 V
Vi(on) 2.5
15 22 kΩ
Input resistor R129
0.42
R1/R20.47 0.52Resistor ratio -
AC Characteristics
fT- - MHz150Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Ccb - 3 pFCollector-base capacitance
VCB = 10 V, f = 1 MHz
-
1) Pulse test: t < 300µs; D < 2%
BCR 142T
Sep-29-19993
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 10 2
mA
IC
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
0.0 0.2 0.4 0.6 V1.0
VCEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 10 2
V
Vi(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
0.0 0.5 1.0 1.5 V2.5
Vi(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
BCR 142T
Sep-29-19994
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mW
300
P
tot
TS
TA
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
