UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R206-068,A
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is an low frequency amplifier.
FEATURES
*Collector-Emitter voltage:
BVCBO=-50V
*Collector current up to –150mA
*High hFE linearity
*Complimentary to 2SC945
SOT-23
1
3
2
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Dissipation(Ta=25°C) Pc 250 mW
Collector Current Ic -150 mA
Junction Temperature Tj 125 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=-100µA, IE=0 -60 V
Collector-Emitter Breakdown Voltage BVCEO IC=-10mA,IB=0 -50 V
Collector Cut-Off Current ICBO VCB=-40V,IE=0 -100 nA
Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -100 nA
DC Current Gain(note) hFE1
VCE=-6V,Ic=-1mA
90
600
Collector-Emitter Saturation Voltage VCE(sat) Ic=-100mA,IB=-10mA -0.1 -0.3 V
Current Gain Bandwidth Product fT VCE=-10V,Ic=-50mA 100 190 MHz
Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 2.0 3.0 pF
Noise Figure NF Ic=-0.1mA,VCE=-6V
RG=10kΩ,f=100Hz
4.0 6.0 dB
UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R206-068,A
CLASSIFICATION OF hFE
RANK R Q P K
RANGE 90-180 135-270 200-400 300-600
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
0 -4 -8 -12 -16 -20
0
-20
-40
-60
-80
-100
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, DC current Gain
102
101
100
103
103
102
101
100
10
-1
V
CE
=-6V
Fig.3 Base-Emitter on Voltage
10
-1
100
101
102
Ic,Collector current (mA)
Base-Emitter voltage (V)
0 -0.2 -0.4 -0.6 -0.8 -1.0
V
CE
=-6V
Ic,Collector current (mA)
103
102
101
100
10
-1
Saturation voltage (MV)
101
102
103
104
Fig.4 Saturation voltage Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
100101102
103
Current Gain-bandwidth
product,f
T
(MHz)
100
101
102
V
CE
=-6V
Collector-Base voltage (V)
Cob,Capacitance (pF)
100
101
102
100101102103
f=1MHz
I
E
=0
I
B
= -50
µ
A
I
B
= -100
µ
A
I
B
= -150
µ
A
I
B
= -200
µ
A
I
B
= -250
µ
A
I
B
= -300
µ
A
10
-1
10
-1
