V
RRM
= 30 V - 40 V
I
F
= 25 A
Features
• High Surge Capability DO-4 Package
• Types from 30 V to 40V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Repetitive peak reverse voltage V
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage
V
DC
V
1N6095 thru 1N6096R
2. Reverse polarity (R): Stud is anode.
Silicon Power
Schottk
y
Diode
21
40
30
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
30
Conditions 1N6095 (R) 1N6096 (R)
40
28
DC
blocking
voltage
V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
V
R
= 20 V, T
j
= 25 °C
I
F
= 25 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150 -55 to 150
mA
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 100 °C
Conditions
V
R
= 20 V, T
j
= 125 °C
2
1N6095 (R) 1N6096 (R)
0.58
40
1.8
0.58
-55 to 150 -55 to 150
2
250 250
1.8
30
25 25
400 400 A
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1
1N6095 thru 1N6096R
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2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
1N6095 thru 1N6096R
DO- 4 (DO-203AA)
J
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 10-32 UNF
B 0.424 0.437 10.77 11.10
C ----- 0.505 ----- 12.82
D ------ 0.800 ----- 20.30
E 0.453 0.492 11.50 12.50
F 0.114 0.140 2.90 3.50
G ----- 0.405 ----- 10.29
J ----- 0.216 ----- 5.50
M ----- φ0.302 ----- φ7.68
N 0.031 0.045 0.80 1.15
P 0.070 0.79 1.80 2.00
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