Sep. 2000
MITSUBISHI IGBT MODULES
CM50AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
CM50AD00-12H
¡IC ..................................................................... 50A
¡VCES ............................................................600V
¡Insulated Type
¡CIB Module
3φ Inverter + 3φ Converter + Brake
Thyristor + Thermistor + Current shunt
resistor
APPLICATION
AC & DC motor controls, General purpose inverters
GUP
EUP
GUN
U
GVP
EVP
GVN
V
GWP
EWP
GWN
W E
R
S
T
P1 P2 P
N1 N
TH1 TH2
B
GB
CIRCUIT DIAGRAM
GT
(sense terminal)
PPS
PPS
LABEL
MAIN CIRCUIT TERMINAL
t=0.6
CONTROL CIRCUIT TERMINAL
t=0.6
P1 N1 NGT P2 P EUP
GUP EVP GVP EWP
GWP
R S T B TH1 U V W GB
TH2 E GUN
GVN
GWN
2.5
1.5
(2.5)
0.6
±0.1
4
φ6 φ6
13
6 11 11 11 11 11 11 7.62 7.62
2.542.54 2.54
6 11 11 11 102.5410 11 11 11
2.54
2.54
2.54
2.54
110
±0.25
120
63
5 5
2222
4
60
± 0.5
12 13
6.4
2-R5
2-φ4.5 MOUNTING HOLES
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
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Sep. 2000
MITSUBISHI IGBT MODULES
CM50AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
G-E Short
C-E Short
TC = 25°C
PULSE (Note. 2)
TC = 25°C
PULSE (Note. 2)
TC = 25°C
Symbol Parameter
Collector Current
Emitter Current
Conditions Unit
V
V
A
A
A
A
W
Rating
600
±20
50
100
50
100
104
VCES
VGES
IC
ICM
IE (
Note.1
)
IEM (
Note.1
)
PC (
Note.3
)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
600
±20
50
100
83
600
50
G-E Short
C-E Short
TC = 25°C
PULSE (Note. 2)
TC = 25°C
Clamp diode part
Clamp diode part
Symbol Parameter
Collector Current
Conditions Unit
V
V
A
A
W
V
A
Rating
VCES
VGES
IC
ICM
PC (
Note.3
)
VRRM
IFM (
Note.3
)
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I2t for fusing
800
220
50
500
1.0 × 103
3φ rectifying circuit
1/2 cycle at 60Hz, peak value, Non-repetitive
Value for one cycle of surge current
Symbol Parameter Conditions UnitRating V
V
A
A
A2s
VRRM
Ea
IO
IFSM
I2t
VDRM
VRRM
IT(AV)
PGM
PG(AV)
IFGM
VFGM
VRGM
di/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate forward voltage
Peak gate reverse voltage
Critical rate of rise of on-state Current
Symbol Parameter Conditions UnitRating V
V
A
W
W
A
V
V
A/µs
MAXIMUM RATINGS
(Tj = 25°C)
INVERTER PART
BRAKE PART
CONVERTER PART
THYRISTOR PART
Tj
Tj
Tstg
Viso—
—
Junction temperature
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
–40 ~ +150
–40 ~ +125
–40 ~ +125
2500
0.98 ~ 1.47
140
Inverter, brake, converter part
Thyristor part
AC 1 min.
Mounting M4 screw
Typical value
Symbol Parameter Conditions UnitRating °C
°C
°C
V
N·m
g
COMMON RATING
ITSM Surge (non-repetitive)
on-state current
Single-phase, half-wave 180° conduction
IG=100mA, VD=400V, dIG/dt=1A/µs
800
800
50
10
1
3
10
5
100
1/2 cycle at 60Hz, peak value Non-repetitive 500 A
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Sep. 2000
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
°C/W
°C/W
Typ.
V
V
MITSUBISHI IGBT MODULES
CM50AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
1
0.5
2.8
—
5.0
3.8
1.0
—
120
300
200
300
2.8
110
—
1.2
2.2
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
VCC = 300V , IC = 50A, VGE = 15V
VCC = 300V, IC = 50A
VGE1 = VGE2 = 15V
RG = 13Ω
Resistive load
IE = 50A, VGE = 0V
IE = 50A, VGE = 0V
diE / dt = – 100A / µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
IC = 5.0mA, VCE = 10V
IC = 50A, VGE = 15V (Note.4)
VCE = 10V
VGE = 0V
—
—
2.2
—
—
—
—
150
—
—
—
—
—
—
0.14
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC(
Note.1
)
trr (
Note.1
)
Qrr (
Note.1
)
Rth(j-c)Q
Rth(j-c)R
Symbol Parameter Test conditions
VGE(th)
VCE(sat)
Collector cutoff current
Gate-emitter cutoff current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
Limits
Min. Max. Unit
64.5 7.5
Collector cutoff current
Gate-emitter cutoff current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
V
V
1
0.5
2.8
—
5.0
3.8
1.0
—
2.8
1.5
2.4
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
VCC = 300V, IC = 50A, VGE = 15V
IF = 50A, Clamp diode part
IGBT part
Clamp diode part
mA
µA
nF
nF
nF
nC
V
°C/W
°C/W
—
—
2.2
—
—
—
—
150
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
Symbol Parameter Test conditions
VGE(th)
VCE(sat)
Unit
64.5 7.5IC = 5.0mA, VCE = 10V
IC = 50A, VGE = 15V (Note.4)
VCE = 10V
VGE = 0V
Repetitive reverse current
Forward voltage drop
Thermal resistance
VR = VRRM, Tj = 150°C
IF = 50A
Per 1/6 module
mA
V
°C/W
—
—
—
—
—
—
IRRM
VFM
Rth(j-c)
Symbol Parameter Test conditions
8
1.5
1.7
Typ.
Limits
Min. Max.
Unit
Typ.
Limits
Min. Max.
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
INVERTER PART
BRAKE PART
CONVERTER PART
http://store.iiic.cc/
Sep. 2000
MITSUBISHI IGBT MODULES
CM50AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
IDRM
IRRM
ITM
IGT
VGT
IH
Rth(j-c)
Repetitive peak off-state current
Repetitive peak reverse current
On-state voltage
Gate trigger current
Gate trigger voltage
Holding current
Thermal resistance
THYRISTOR PART
dv/dt
VD=800V
VR=800V
IT=50A, instantaneous means
VD=6V, IT=1A
VD=6V, IT=1A
Tj=125°C, VD=540V, exp. waveform
Critical rate of rise of off-state
Voltage
1
1
1.30
100
3
—
1.3
mA
mA
V
mA
V
mA
°C/W
—
—
—
—
—
50
—
—
—
—
—
—
—
—
Symbol Parameter Test conditions Unit
Typ.
Limits
Min. Max.
500 — — V/µs
—
—
Resistance
Temperature coefficient Measured between N-N1 mΩ
%/°C
2.3
0.060
—
—
R—
Symbol Parameter Test conditions Unit
Typ.
Limits
Min. Max.
RESISTOR PART
—
—
Resistance
B Constant TC = 25°C
Resistance at 25°C, 50°C (Note.5) kΩ
K
100
4000
—
—
RTH
B
Symbol Parameter Test conditions Unit
Typ.
Limits
Min. Max.
THERMISTOR PART
Note.1 IE, VEC, trr, Q rr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3 Junction temperature (Tj) should not increase beyond 150°C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR1-InR2)/(1/T1-1/T2) R1 : Resistance at T1(K)
R2 : Resistance at T2(K)
*1 : Typical value is measured by using Shin-etsu Silicone “G-746”.
—
Contact thermal resistance Case to fin, Thermal compound applied*1 (1 module) °C/W0.035—
Rth(c-f)
Symbol Parameter Test conditions Unit
Typ.
Limits
Min. Max.
COMMON RATING
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