© 2017 IXYS CORPORATION, All Rights Reserved DS100844B(9/17)
IXFK300N20X3
IXFX300N20X3
VDSS = 200V
ID25 = 300A
RDS(on)
4m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 200 V
VGS(th) VDS = VGS, ID = 8mA 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 1.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 4 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 200 V
VDGR TJ= 25C to 150C, RGS = 1M200 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C (Chip Capability) 300 A
IL(RMS) External Lead Current Limit 160 A
IDM TC= 25C, Pulse Width Limited by TJM 700 A
IATC= 25C 150 A
EAS TC= 25C 3.5 J
dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns
PDTC= 25C 1250 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
N-Channel Enhancement Mode
Avalanche Rated
X3-Class HiPerFETTM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
GDS
TO-264 (IXFK)
S
G
DTab
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK300N20X3
IXFX300N20X3
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 300 A
ISM Repetitive, pulse Width Limited by TJM 1200 A
VSD IF = 100A, VGS = 0V, Note 1 1.4 V
trr 172 ns
QRM 1.1 μC
IRM 12.8 A
IF = 150A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 60A, Note 1 80 135 S
RGi Gate Input Resistance 1.8
Ciss 23.8 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 4.0 nF
Crss 3.2 pF
Co(er) 1640 pF
Co(tr) 5640 pF
td(on) 44 ns
tr 43 ns
td(off) 184 ns
tf 13 ns
Qg(on) 375 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 117 nC
Qgd 94 nC
RthJC 0.10 C/W
RthCS 0.15 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
Terminals: 1 - Gate
2,4 - Drain
3 - Source
PLUS 247TM Outline
TO-264 Outline
Terminals: 1 = Gate
2,4 = Drain
3 = Source
b
Q
D
R
EA
S
R1
x2 b2
b1 A1
L1
31 2
L
c
e
40P
e
Q1
1 2 3 4
b
C
L
D
R
Q
E
A
A1
L1
D2
D1
E1
A2
b2 2 PLCS
3 PLCS 2 PLCS
b4
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2017 IXYS CORPORATION, All Rights Reserved
IXFK300N20X3
IXFX300N20X3
Fig. 1. Output Characteristics @ TJ = 25
o
C
0
50
100
150
200
250
300
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characteristics @ TJ = 125
o
C
0
50
100
150
200
250
300
00.40.81.21.622.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
8V
9V
Fig. 4. RDS(on) Normalized to ID = 150A Value vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 300A
I
D
= 150A
Fig. 5. RDS(on) Normalized to ID = 150A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 100 200 300 400 500 600 700 800 900
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ TJ = 25
o
C
0
100
200
300
400
500
600
700
800
900
0 2 4 6 8 10121416182022
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
5V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
V
GS(th)
BV
DSS
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK300N20X3
IXFX300N20X3
Fig. 7. Maximum Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 9. Transconductance
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350 400
I
D
- Amperes
g
f s
- Siemens
25
o
C
125
o
C
T
J
= - 40
o
C
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
100
200
300
400
500
600
700
800
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 11. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350 400
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 100V
I
D
= 150A
I
G
= 10mA
Fig. 12. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1,000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 8. Input Admittance
0
50
100
150
200
250
300
350
400
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
© 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_300N20X3 (29-S202) 6-22-17
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - K / W
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.2
IXFK300N20X3
IXFX300N20X3
Fig. 14. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
1ms
100μs
R
DS(
on
)
Limit
10ms
DC
25μs
External Lead
Current Limit
100ms
Fig. 13. Output Capacitance Stored Energy
0
5
10
15
20
25
30
0 50 100 150 200
V
DS
- Volts
E
OSS
- MicroJoules
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