SEMiX302GB176HDs
© by SEMIKRON Rev. 2 – 23.03.2011 1
SEMiX® 2s
GB
Trench IGBT Modules
SEMiX302GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1700 V
ICTj= 150 °C Tc=25°C 308 A
Tc=80°C 219 A
ICnom 200 A
ICRM ICRM = 2xICnom 400 A
VGES -20 ... 20 V
tpsc
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj=125°C 10 µs
Tj-55 ... 150 °C
Inverse diode
IFTj= 150 °C Tc=25°C 389 A
Tc=80°C 262 A
IFnom 200 A
IFRM IFRM = 2xIFnom 400 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 2000 A
Tj-40 ... 150 °C
Module
It(RMS) Tterminal =80°C 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=200A
VGE =15V
chiplevel
Tj=25°C 22.45V
Tj=125°C 2.5 2.9 V
VCE0 Tj=25°C 11.2V
Tj=125°C 0.9 1.1 V
rCE VGE =15V Tj=25°C 5.0 6.3 m
Tj=125°C 7.8 9.0 m
VGE(th) VGE=VCE, IC= 8 mA 5.2 5.8 6.4 V
ICES VGE =0V
VCE = 1700 V
Tj=25°C 0.1 3 mA
Tj=125°C mA
Cies VCE =25V
VGE =0V
f=1MHz 17.6 nF
Coes f=1MHz 0.73 nF
Cres f=1MHz 0.58 nF
QGVGE = - 8 V...+ 15 V 1866 nC
RGint Tj=25°C 3.75
td(on) VCC = 1200 V
IC=200A
VGE =±15V
RG on =6.5
RG off =6.5
Tj=125°C 225 ns
trTj=125°C 45 ns
Eon Tj=125°C 130 mJ
td(off) Tj=125°C 665 ns
tfTj=125°C 105 ns
Eoff Tj=125°C 77 mJ
Rth(j-c) per IGBT 0.1 K/W
SEMiX302GB176HDs
2 Rev. 2 – 23.03.2011 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF= 200 A
VGE =0V
chip
Tj=25°C 1.5 1.70 V
Tj=125°C 1.4 1.6 V
VF0 Tj=25°C 0.9 1.1 1.3 V
Tj=125°C 0.7 0.9 1.1 V
rFTj=25°C 2.0 2.0 2.0 m
Tj=125°C 2.7 2.7 2.7 m
IRRM IF= 200 A
di/dtoff =3100A/µs
VGE =-15V
VCC = 1200 V
Tj=125°C 235 A
Qrr Tj=125°C 77 µC
Err Tj=125°C 43 mJ
Rth(j-c) per diode 0.15 K/W
Module
LCE 18 nH
RCC'+EE' res., terminal-chip TC=25°C 0.7 m
TC=125°C 1m
Rth(c-s) per module 0.045 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
Nm
w250 g
Temperatur Sensor
R100 Tc=100°C (R25=5 k) 493 ± 5%
B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550
±2% K
SEMiX® 2s
GB
Trench IGBT Modules
SEMiX302GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
SEMiX302GB176HDs
© by SEMIKRON Rev. 2 – 23.03.2011 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
SEMiX302GB176HDs
4 Rev. 2 – 23.03.2011 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
SEMiX302GB176HDs
© by SEMIKRON Rev. 2 – 23.03.2011 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
SEMiX 2s
spring configuration
