SMAJ5.0A thru SMAJ188CA
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Revision: 26-Jan-12 1Document Number: 89277
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TransZorb®
Transient Voltage Suppressors
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use CA suffix (e.g. SMAJ10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 % (300 W
above 78 V)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2, rating is 300 W above 78 V
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
PRIMARY CHARACTERISTICS
VWM 5.0 V to 188 V
PPPM 400 W, 300 W
IFSM 40 A
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) PPPM (1)(2) 400 W
Peak pulse current with a waveform IPPM (1) See next table A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only IFSM (2) 40 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
SMAJ5.0A thru SMAJ188CA
www.vishay.com Vishay General Semiconductor
Revision: 26-Jan-12 2Document Number: 89277
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMAJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 25 A (uni-directional only)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
UNI BI MIN. MAX.
SMAJ5.0A (5) AE WE 6.40 7.07 10 5.0 800 43.5 9.2
SMAJ6.0A AG WG 6.67 7.37 10 6.0 800 38.8 10.3
SMAJ6.5A AK WK 7.22 7.98 10 6.5 500 35.7 11.2
SMAJ7.0A AM WM 7.78 8.60 10 7.0 200 33.3 12.0
SMAJ7.5A AP WP 8.33 9.21 1.0 7.5 100 31.0 12.9
SMAJ8.0A AR WR 8.89 9.83 1.0 8.0 50 29.4 13.6
SMAJ8.5A AT WT 9.44 10.4 1.0 8.5 10 27.8 14.4
SMAJ9.0A AV WV 10.0 11.1 1.0 9.0 5.0 26.0 15.4
SMAJ10A AX WX 11.1 12.3 1.0 10 1.0 23.5 17.0
SMAJ11A AZ WZ 12.2 13.5 1.0 11 1.0 22.0 18.2
SMAJ12A BE XE 13.3 14.7 1.0 12 1.0 20.1 19.9
SMAJ13A BG XG 14.4 15.9 1.0 13 1.0 18.6 21.5
SMAJ14A BK XK 15.6 17.2 1.0 14 1.0 17.2 23.2
SMAJ15A BM XM 16.7 18.5 1.0 15 1.0 16.4 24.4
SMAJ16A BP XP 17.8 19.7 1.0 16 1.0 15.4 26.0
SMAJ17A BR XR 18.9 20.9 1.0 17 1.0 14.5 27.6
SMAJ18A BT XT 20.0 22.1 1.0 18 1.0 13.7 29.2
SMAJ20A BV XV 22.2 24.5 1.0 20 1.0 12.3 32.4
SMAJ22A BX XX 24.4 26.9 1.0 22 1.0 11.3 35.5
SMAJ24A BZ XZ 26.7 29.5 1.0 24 1.0 10.3 38.9
SMAJ26A CE YE 28.9 31.9 1.0 26 1.0 9.5 42.1
SMAJ28A CG YG 31.1 34.4 1.0 28 1.0 8.8 45.4
SMAJ30A CK YK 33.3 36.8 1.0 30 1.0 8.3 48.4
SMAJ33A CM YM 36.7 40.6 1.0 33 1.0 7.5 53.3
SMAJ36A CP YP 40.0 44.2 1.0 36 1.0 6.9 58.1
SMAJ40A CR YR 44.4 49.1 1.0 40 1.0 6.2 64.5
SMAJ43A CT YT 47.8 52.8 1.0 43 1.0 5.8 69.4
SMAJ45A CV YV 50.0 55.3 1.0 45 1.0 5.5 72.7
SMAJ48A CX YX 53.3 58.9 1.0 48 1.0 5.2 77.4
SMAJ51A CZ YZ 56.7 62.7 1.0 51 1.0 4.9 82.4
SMAJ54A RE ZE 60.0 66.3 1.0 54 1.0 4.6 87.1
SMAJ58A RG ZG 64.4 71.2 1.0 58 1.0 4.3 93.6
SMAJ60A RK ZK 66.7 73.7 1.0 60 1.0 4.1 96.8
SMAJ64A RM ZM 71.1 78.6 1.0 64 1.0 3.9 103
SMAJ70A RP ZP 77.8 86.0 1.0 70 1.0 3.5 113
SMAJ75A RR ZR 83.3 92.1 1.0 75 1.0 3.3 121
SMAJ78A RT ZT 86.7 95.8 1.0 78 1.0 3.2 126
SMAJ85A RV ZV 94.4 104 1.0 85 1.0 2.2 137
SMAJ90A RX ZX 100 111 1.0 90 1.0 2.1 146
SMAJ100A RZ ZZ 111 123 1.0 100 1.0 1.9 162
SMAJ110A SE VE 122 135 1.0 110 1.0 1.7 177
SMAJ120A VG VG 133 147 1.0 120 1.0 1.6 193
SMAJ130A VK VK 144 159 1.0 130 1.0 1.4 209
SMAJ150A VM VM 167 185 1.0 150 1.0 1.2 243
SMAJ160A SP VP 178 197 1.0 160 1.0 1.2 259
SMAJ170A SR VR 189 209 1.0 170 1.0 1.09 275
SMAJ188A SS VS 209 231 1.0 188 1.0 0.91 328
SMAJ5.0A thru SMAJ188CA
www.vishay.com Vishay General Semiconductor
Revision: 26-Jan-12 3Document Number: 89277
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient RJA (1) 120 °C/W
Typical thermal resistance, junction to lead RJL 30 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMAJ5.0A-M3/61 0.064 61 1800 7" diameter plastic tape and reel
SMAJ5.0A-M3/5A 0.064 5A 7500 13" diameter plastic tape and reel
0.1
1
10
100
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (μs)
0.1 1 10 100 1000 10 000
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
SMAJ85
thru SMAJ188
SMAJ5.0
thru SMAJ78
Non-Repetitive Pulse
Waveform Shown in Fig. 3
T
A
= 25 °C
0 25 50 75 100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
01.0 2.0 3.0 4.0
0
50
100
150
t
d
t - Time (ms)
IPPM - Peak Pulse Current, % IRSM
tr = 10 μs
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 μs Waveform
as Dened by R.E.A.
TJ = 25 °C
Pulse Width (td)
is Dened as the Point
Where the Peak Current
Decays to 50 % of IPPM
10
100
1000
10 000
101 100 200
C
J
- Junction Capacitance (pF)
V
WM
- Reverse Stand-Off Voltage (V)
Uni-Directional
Bi-Directional
Measured at Stand-off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
SMAJ5.0A thru SMAJ188CA
www.vishay.com Vishay General Semiconductor
Revision: 26-Jan-12 4Document Number: 89277
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1
10
100
1000
0.001 0.01 0.1 1.0 10 100 1000
tp - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
101 100
10
50
100
200
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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Revision: 12-Mar-12 1Document Number: 91000
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