2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 4117 -0.6 to -1.8 -40 70 30 4118 -1 to -3 -40 80 80 4119 -2 to -6 -40 100 200 FEATURES D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS APPLICATIONS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noise D High Sensitivity to Low-Level Signals D High-Impedance Transducer Amplifiers D Smoke Detector Input D Infrared Detector Amplifier D Precision Test Equipment DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. TO-206AF (TO-72) TO-226AA (TO-92) S C 1 The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information). D TO-236 (SOT-23) 1 4 D S 3 S 2 3 D G G Top View 2N4117A 2N4118A 2N4119A 1 2 G 2 3 Top View PN4117A PN4118A PN4119A Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236 For applications information see AN105. Document Number: 70239 S-41231--Rev. G, 28-Jun-04 www.vishay.com 1 2N/PN/SST4117A Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipation (case 25_C) : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . -65 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . -55 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . -55 to 150_C Notes a. Derate 2 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 4117 Parameter 4118 4119 Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -70 -40 VGS(off) VDS = 10 V, ID = 1 nA -0.6 -1.8 -1 -3 -2 -6 VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 mA Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current IDSS VGS = -20 V VDS = 0 V G t Reverse Gate R Current C t IGSS VGS = -10 V VDS = 0 V TA = 100_C Gate Operating Currentb -40 V -0.2 -1 -1 -1 pA -0.4 -2.5 -2.5 -2.5 nA 2N VGS = -20 V VDS = 0 V TA = 150_C VGS = -10 V VDS = 0 V -40 PN -0.2 -1 -1 -1 SST -0.2 -10 -10 -10 PN/SST -0.03 -2.5 -2.5 -2.5 IG VDG = 15 V, ID = 30 mA -0.2 Drain Cutoff Currentb ID(off) VDS = 10 V, VGS = -8 V 0.2 Gate-Source Forward Voltageb VGS(F) IG = 1 mA , VDS = 0 V 0.7 pA nA pA V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss i Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltageb en VDS = 10 V VGS = 0 V f = 1 MHz 2N/PN 1.2 SST 1.2 2N/PN 0.3 SST 0.3 VDS = 10 V, VGS = 0 V f = 1 kHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. This parameter not registered with JEDEC. www.vishay.com 2 70 VDS = 10 V, VGS = 0 V f = 1 kHz 15 210 80 250 100 330 3 5 10 3 3 3 1.5 1.5 1.5 mS pF nV Hz NT Document Number: 70239 S-41231--Rev. G, 28-Jun-04 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 300 800 240 180 600 gfs 120 400 IDSS 200 60 -1 -2 -3 -4 VGS(off) - Gate-Source Cutoff Voltage (V) 15 0.1 pA 200 3 6 2 rDS @ ID = 10 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 1 0 gos - Output Conductance (S) 4 0 -1 -2 IGSS @ 25_C 6 30 Common-Source Forward Transconductance vs. Drain Current -3 -4 160 TA = -55_C 120 25_C 125_C 80 40 VDS = 10 V f = 1 kHz 0 -5 0.01 0.1 VGS(off) - Gate-Source Cutoff Voltage (V) 1 ID - Drain Current (mA) Output Characteristics Output Characteristics 100 500 VGS(off) = -0.7 V VGS(off) = -2.5 V 80 400 VGS = 0 V ID - Drain Current (A) ID - Drain Current (A) 12 18 24 VDG - Drain-Gate Voltage (V) VGS(off) = -2.5 V 9 0 10 mA TA = 25_C 5 rDS 3 100 mA 0 gos 12 IGSS @ 125_C 10 pA -5 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 mA TA = 125_C 1 pA gfs - Forward Transconductance (S) 0 rDS(on) - Drain-Source On-Resistance (kW) 100 pA 0 0 100 mA VGS(off) = -2.5 V IG - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz Gate Leakage Current 1 nA gfs - Forward Transconductance (S) IDSS - Saturation Drain Current (A) 1000 -0.1 V 60 -0.2 V 40 -0.3 V -0.4 V 20 -0.5 V VGS = 0 V 300 -0.5 V 200 -1.0 V 100 -1.5 V -2.0 V 0 0 0 4 8 12 VDS - Drain-Source Voltage (V) Document Number: 70239 S-41231--Rev. G, 28-Jun-04 16 20 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) www.vishay.com 3 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 100 VDS = 10 V VGS(off) = -0.7 V gfs - Forward Transconductance (S) VGS(off) = -0.7 V ID - Drain Current (A) 80 60 TA = 125_C 40 25_C 20 -55_C 0 160 -0.2 -0.4 -0.8 -0.6 VGS - Gate-Source Voltage (V) TA = -55_C 25_C 120 80 125_C 40 -1.0 0 Transfer Characteristics VGS(off) = -2.5 V VDS = 10 V 400 TA = -55_C 300 25_C 200 100 125_C 0 -1.0 VGS(off) = -2.5 V VDS = 10 V f = 1 kHz 240 TA = -55_C 180 25_C 120 125_C 60 0 0 -1 -2 -3 -4 -5 0 -1 -2 -3 -4 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current Common-Source Input Capacitance vs. Gate-Source Voltage -5 2.0 100 g fs R L f = 1 MHz AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 1.6 Ciss - Input Capacitance (pF) 80 AV - Voltage Gain -0.2 -0.4 -0.6 -0.8 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 300 gfs - Forward Transconductance (S) 500 10 V ID VGS(off) = -0.7 V 40 20 -2.5 V VDS = 0 V 1.2 10 V 0.8 0.4 0 0 0.01 0.1 ID - Drain Current (mA) www.vishay.com 4 VDS = 10 V f = 1 kHz 0 0 ID - Drain Current (A) Transconductance vs. Gate-Source Voltage 200 1 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Document Number: 70239 S-41231--Rev. G, 28-Jun-04 2N/PN/SST4117A Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 0.5 200 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 0.4 Hz 160 0.3 en - Noise Voltage nV / Crss - Reverse Feedback Capacitance (pF) f = 1 MHz VDS = 0 V 0.2 10 V 0.1 ID = 10 mA 120 80 VGS = 0 V 40 0 0 0 -4 -8 -12 -16 -20 100 k 10 100 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 20 rDS(on) - Drain-Source On-Resistance ( ) gos - Output Conductance (S) VGS(off) = -2.5 V TA = -55_C 25_C 1 10 k f - Frequency (Hz) Output Conductance vs. Drain Current 2 1k 125_C VDS = 10 V f = 1 kHz VGS(off) = -0.7 V 16 12 8 -2.5 V 4 TA = 25_C 0 0 0.01 0.1 ID - Drain Current (mA) Document Number: 70239 S-41231--Rev. G, 28-Jun-04 1 0.01 0.1 1 ID - Drain Current (mA) www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1