SEMiX223GD12Vc
© by SEMIKRON Rev. 2 – 16.02.2011 1
SEMiX® 33c
GD
SEMiX223GD12Vc
Features
• Homogeneous Si
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 2,9
RGoff,main = 2,9
RG,X = 2,2
RE,X = 0,5
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 175 °C Tc=25°C 323 A
Tc=80°C 246 A
ICnom 225 A
ICRM ICRM = 3xICnom 675 A
VGES -20 ... 20 V
tpsc
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj=125°C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 263 A
Tc=80°C 197 A
IFnom 225 A
IFRM IFRM = 3xIFnom 675 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 1161 A
Tj-40 ... 175 °C
Module
It(RMS) Tterminal =80°C 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=225A
VGE =15V
chiplevel
Tj=25°C 1.85 2.3 V
Tj=150°C 2.3 2.55 V
VCE0 Tj=25°C 0.94 1.04 V
Tj=150°C 0.88 0.98 V
rCE VGE =15V Tj=25°C 4.0 5.6 m
Tj=150°C 6.1 7.0 m
VGE(th) VGE=VCE, IC= 9 mA 5.5 6 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj=150°C mA
Cies VCE =25V
VGE =0V
f=1MHz 13.5 nF
Coes f=1MHz 1.33 nF
Cres f=1MHz 1.33 nF
QGVGE = - 8 V...+ 15 V 2460 nC
RGint Tj=25°C 3.33
td(on) VCC = 600 V
IC=225A
VGE =±15V
RG on =3.8
RG off =3.8
di/dton = 3200 A/µs
di/dtoff =2000A/µs
du/dtoff = 6600 V/
µs
Tj=150°C 470 ns
trTj=150°C 72 ns
Eon Tj=150°C 19.9 mJ
td(off) Tj=150°C 665 ns
tfTj=150°C 109 ns
Eoff Tj=150°C 27.2 mJ
Rth(j-c) per IGBT 0.14 K/W