IXTP08N120P - Zilog - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1200 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 0.8 A

IDM TC= 25°C, pulse width limited by TJM 1.8 A

IATC= 25°C 0.8 A

EAS TC= 25°C80mJ

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C50W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062) from case for 10s 300 °C

TSOLD Plastic body for 10s 260 °C

MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.50 g

TO-220 3.00 g

DS99868A (04/08)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 1200 V

VGS(th) VDS = VGS, ID = 50μA 2.5 4.5 V

IGSS VGS = ±20V, VDS = 0V ±50 nA

IDSS VDS = VDSS 5 μA

VGS = 0V TJ = 125°C 100 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 20.5 25 Ω

PolarTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA08N120P

IXTP08N120P

VDSS = 1200V

ID25 = 0.8A

RDS(on) ≤≤

≤≤

≤ 25ΩΩ

ΩΩ

Ω

G = Gate D = Drain

S = Source TAB = Drain

Features

zInternational standard packages

zUnclamped Inductive Switching

(UIS) rated

zLow package inductance

- easy to drive and to protect

Advantages

zEasy to mount

zSpace savings

zHigh power density

TO-263 (IXTA)

TO-220 (IXTP)

D(TAB)

G

S

GS

(TAB)

Applications:

zHigh Voltage Switched-mode and

resonant-mode power supplies

zHigh Voltage Pulse Power Applications

zHigh Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

zHigh Voltage DC-DC converters

zHigh Voltage DC-AC inverters

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA08N120P

IXTP08N120P

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS= 30V, ID = 0.5 • ID25, Note 1 0.38 0.63 S

Ciss 333 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 20 pF

Crss 4.7 pF

td(on) Resistive Switching Times 20 ns

trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 26 ns

td(off) RG = 50Ω (External) 55 ns

tf 24 ns

Qg(on) 14.0 nC

Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 2.0 nC

Qgd 8.2 nC

RthJC 2.5 °C/W

RthCS (TO-220) 0.50 °C/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0V 0.8 A

ISM Repetitive, pulse width limited by TJM 2.4 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr IF = 0.8A, -di/dt = 100A/μs, 900 ns

VR = 100V, VGS = 0V

Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Drain

TO-220 (IXTP) Outline

TO-263 (IXTA) Outline

Fi g . 1. Exten d ed Outp u t C h ar acter i sti cs

@ 25ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0 3 6 9 12 15 18 21 24 27 30 33

V

DS

- Vo lt s

I

D

- A mpe res

V

GS

= 10V

7V

5V

6V

Fig. 2. Output Characteristics

@ 125ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 5 10 15 20 25 30 35 40

V

DS

- Volts

I

D

- A mpe re s

V

GS

= 10V

6V

5V

Fig. 3. R

DS(on)

Normalized to I

D

= 0. 4A Val ue

vs. Junction T emperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- N ormaliz ed

V

GS

= 10V

I

D

= 0.8A

I

D

= 0.4A

Fig. 4. R

DS(on)

Normalized to I

D

= 0.4A Value

vs. Dr ain C ur r ent

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

I

D

- Amp e res

R

DS(on)

- N ormaliz ed

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Input Admittance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- A mpe res

T

J

= 125ºC

25ºC

- 40ºC

Fig. 5. Maximum Drain Current vs.

Case Temperatur e

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Am peres

IXTA08N120P

IXTP08N120P

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA08N120P

IXTP08N120P

IXYS REF: T_08N120P(1C) 4-02-08-A

Fig. 7. T ransconductance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

I

D

- Amp e res

g

f s

- Siemen s

T

J

= - 40ºC

125ºC

25ºC

Fi g . 8. F or war d Vo l tag e D r o p of

Intrinsic Diode

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.4 0.5 0.6 0.7 0.8 0.9

V

SD

- Volts

I

S

- Am peres

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 2 4 6 8 10 12 14

Q

G

- NanoCoulombs

V

GS

- V o lts

V

DS

= 600V

I

D

= 0.4A

I

G

= 1mA

Fig. 9. Capacitance

1

10

100

1,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - P icoF arads

f

= 1 MHz

Ciss

Crss

Coss

Fi g. 11. Maximu m Tr an s i en t Thermal Imp ed a n ce

0.1

1.0

10.0

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W