MJE13002B
NPN Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 900mWatts of Power Dissipation.
• Collector-current 0.8A
• Collector-base Voltage 600V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0) 400 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 600 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 6.0 Vdc
ICBO Collector Cutoff Current
(VCB=600Vdc, IE=0) 100 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, IC=0) 100 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=10mAdc, VCE=10Vdc) 6
hFE(2) DC Current Gain
(IC=200mAdc, VCE=10Vdc) 9.0 40
VCE(sat) Collector-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc) 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc) 1.1 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz) 5.0 MHz
tF Fall Time 0.5 uS
tS Storage Time VCC=100V,IC=1.0A,
IB1=IB2=0.2A 2.5 uS
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2 2006/05/17
TM
Micro Commercial Components
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
B
C
D
G
1
2 3
1.BASE
3.EMITTER
2.COLLECTOR
TO-92
www.mccsemi.com
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• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0